CN1208842C - Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof - Google Patents
Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof Download PDFInfo
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- 239000003989 dielectric material Substances 0.000 title claims abstract description 14
- -1 zirconium aluminate Chemical class 0.000 title claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 title claims abstract description 12
- 230000005669 field effect Effects 0.000 title claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 230000012010 growth Effects 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
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- 238000000137 annealing Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 8
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- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
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- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 claims 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
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- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 6
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Abstract
The present invention provides a dielectric coefficient grid dielectric material zirconium aluminate film used for a metal-oxide-semiconductor field effect transistor and a making method thereof. The present invention has the technical scheme that zirconia power and alumina powder are mixed through ball milling under the temperature of 1250 DEG by a pulsed-laser deposition technique, the zirconia power and alumina powder form a round plate by cold press moulding, and then are sintered for six hours to obtain a zirconium aluminate ceramic target material. Nitrogen gas is led to a growth chamber, and atomic percentage concentration of a nitrogen element in the film is 6%, the bond energy of a nitrogen atom is 404.1 eV in a high oxidation state, and thus, the nitrogen zirconium aluminate film can be obtained. The performance index of the material reaches a higher level of a high dielectric electric grid dielectric material academy obtained by an international fellow trader, and meanwhile, the practical application requirement of a semiconductor midfield transistor with a lower power consumption requirement is satisfied.
Description
One, technical field
The present invention relates to the microelectronic material field, particularly relate to and can be applicable to novel high-dielectric coefficient grid dielectric material and preparation method thereof in the metal-oxide semiconductor fieldeffect transistor of future generation (MOSFET).
Two, background technology
In the silicon-based semiconductor integrated circuit, metal-oxide semiconductor fieldeffect transistor
(MOSFET) be the elementary cell that constitutes mnemon, microprocessor and logical circuit, the size of its volume is directly connected to the integrated level of very lagre scale integrated circuit (VLSIC).By famous Moore's Law, to double every the integrated level of 18 months integrated circuits.Can be expected at 2005 thus, it is ripe that the photoetching technique of 0.1 μ m will be tending towards, and among the corresponding M OSFET as the SiO of gate dielectric film
2The thickness of layer will reduce to below the 2nm.Level to photoetching technique in 2012 will reach 0.05 μ m, the SiO of corresponding equivalence
2The thickness of gate dielectric film will reduce to below the 1nm.But Quantum mechanical calculation shows works as SiO
2When the thickness of gate dielectric film will reduce to 2nm, grid knot that tunnel effect causes and the leakage current between the silicon chip had promptly arrived the degree that can not allow.In order to address this problem, must use material to replace existing SiO with higher dielectric coefficient and low-leakage current
2, this has become the bottleneck that restricts MOSFET integrated level raising in following 10 years, and has caused the very big concern of various countries semiconductor educational circles.People are accustomed to being equivalent to how thick SiO
2The equivalent oxide thickness (EOT) of layer is described the thickness of high-dielectric coefficient grid dielectric layer (high-k gate dielectric), and its expression formula is:
EOT＝t
SiO2+t
high-k?oxide×ε
SiO2/ε
high-k?oxide
T wherein
SiO2The SiO that causes for interfacial reaction
2The thickness of layer, t
High-k oxideBe the actual (real) thickness of high-dielectric coefficient dielectric layer, ε
SiO2And ε
High-koxideBe respectively SiO
2With the dielectric dielectric coefficient of high-dielectric coefficient, wherein ε
SiO2=3.9.Should make the actual (real) thickness of grid dielectric layer bigger in order to reduce leakage current, the approach that at this moment lowers EOT has two: one, selects for use the bigger material of dielectric coefficient as the gate dielectric membrane material, and the 2nd, the SiO that try one's best minimizing and even elimination form at the interface
2Layer.
The basic principle that present stage is sought high-dielectric coefficient grid dielectric material is:
1) electrical properties: the broad stopband, cation valence is few, low defective and interface state density.
2) dielectric property: high-dielectric coefficient (～20) is also more slow with temperature and frequency change, low-leakage current.
3) thermal stability: can bear 800 ℃ at least, 2 minutes short annealing heat treatment.
4) chemical property and Si substrate compatibility do not form or only form the SiO of one or two atomic layer at the interface
2, compatible mutually with grid material, interfacial reaction does not take place.Its preparation technology will with existing compensation metal-oxide semiconductor (MOS) (CMOS) process compatible.
5) thus for the defective that reduces gate dielectric film reduces leakage current, people it is generally acknowledged that film is preferably epitaxy single-crystal film or amorphous film.The former preparation is more difficult, thereby amorphous film becomes object of greatest concern.
6) add an amount of nitrogen in metal oxide, can increase its dielectric coefficient and improve thermodynamic (al) stability, the preparation nitrogen oxide also can suppress surface of silicon substrate SiO to a certain extent in nitrogen atmosphere simultaneously
2The formation of boundary layer, thereby metal oxynitride is considered to have the grid dielectric material of bigger application potential.
Many oxides such as Ta
2O
5, TiO
2, ZrO
2, Al
2O
3Deng just being studied widely as the candidate material.But they all can not satisfy alternative SiO fully
2Whole requirements.ZrO
2Higher dielectric constant is arranged, be about 500 ℃ but crystallization temperature is low, polycrystal film can cause high crystal boundary leakage current; While ZrO
2Big oxygen diffusion rate is arranged, in the preparation process of film, oxygen can and pasc reaction can cause the formation of low-k boundary layer and reduce the electric capacity of entire device.Opposite with it, Al
2O
3Very high crystallization temperature and low-down oxygen diffusion rate are arranged, but dielectric constant less 8.9.We utilize these two kinds of oxides advantage separately, introduce the nitrogen preparation and have the very NiZr aluminate (ZrAlO of high chemical stability and medium dielectric constant
xN
yHereinafter to be referred as ZAON) material.
Three, summary of the invention
1. goal of the invention: the present invention seeks to provide a kind of NiZr aluminate film that is applied to Metal-oxide-semicondutor (MOS) field-effect transistor and preparation method thereof.
2. technical scheme
A kind of high-dielectric coefficient grid dielectric material NiZr aluminate film that is applied to metal-oxide semiconductor fieldeffect transistor, hundreds of minutes specific concentrations of nitrogen atoms of elements in film are 6%, the binding energy of nitrogen-atoms is 404.1ev, it is high oxidation state, the NiZr aluminate film thickness that makes is 4nm, its crystallization temperature is more than 950 ℃, can bear the required annealing in process of CMOS (Complementary Metal Oxide Semiconductor) technology and non-crystallization, dielectric coefficient is 18.2, its equivalent oxide thickness is 1.03nm, depress at 1 voltaism, its leakage current is 28.7mA/cm
2
A kind of high-dielectric coefficient grid dielectric material NiZr aluminate (ZrAlO that is applied to Metal-oxide-semicondutor (MOS) field-effect transistor
xN
y) preparation method of film, it is characterized in that adopting pulsed laser deposition (PLD) technology, use ZrAlO
3Ceramic target, preparation NiZr aluminate film in blanket of nitrogen, concrete steps are as follows:
(1) the zirconium aluminate ceramic target is placed on the target platform (1), silicon substrate (6) is placed on the substrate table (5), resistance furnace (7) is placed on the substrate table below, target platform (1), substrate table (5), substrate (6), resistance furnace (7) all are placed in the growth room (8), the hole (9) that a logical nitrogen is arranged in the left side, growth room, the right upper portion opening is placed lens (3), and lower openings connects vacuum pump (4);
(2) with mechanical pump growth room (8) are vacuumized and reach below the 10Pa, vacuumize with molecular pump again and reach 1 * 10
-2Pa;
(3) in growth room (8), pour high pure nitrogen from logical nitrogen pore (9), make the blanket of nitrogen that keeps 18-25Pa in the growth room;
(4) with resistance furnace (7) heated substrate platform (5), make silicon substrate reach 300 ℃-800 ℃ of design temperatures;
(5) starting impulse laser, laser beam (2) scioptics are accumulated on the zirconium aluminate target, in film-forming process, target platform (1) and substrate table (5) are with constant speed rotation, thereby make the laser beam plasma be deposited on the silicon substrate equably, make the film that thickness is 4nm-10nm, and cool to room temperature in position;
(6) with film with the short annealing heat-treatment furnace in blanket of nitrogen under 800 ℃-950 ℃, short annealing 0.5-3 minute.
Zirconium aluminate ceramic target described in the above-mentioned steps (1) is to use pure ZrO
2And AlO
3Powder is pressed 1: 1 mol ratio after ball milling mixes, under 10-15MPa pressure, be cold-pressed into disk, made at 1200-1300 ℃ of following sintering 5-8 hour then, preferred cold pressure 12MPa, preferred sintering temperature is 1250 ℃, sintering time is 6 hours, backing material is a n-type silicon chip (100) of selecting resistance 2-3 Ω cm for use, through acetone or alcohol ultrasonic cleaning 3-5 minute, continuous wash twice was used the deionized water ultrasonic cleaning 3-5 minute, twice of continuous wash then, with the deionized water rinsing that flows, remove the SiO on surface at last with hydrofluoric acid again
2
The high pure nitrogen that charges in the growth room in the above-mentioned steps (3) is 99.999%, and the blanket of nitrogen in thin film growth process in the growth room remains on 20Pa;
Resistance furnace described in the above-mentioned steps (4) can any temperature keep constant between 20 ℃-900 ℃, the design temperature of heating silicon substrate is 500 ℃;
Pulse laser described in the above-mentioned steps (5) is KrF (KrF) excimer laser, and its wavelength is 248nm, and pulse duration is 30ns, single pulse energy 50-600mJ, and energy density is 2.0J/cm
2
Adopting the short annealing heat-treatment furnace on the aftertreatment technology of film in the above-mentioned steps (6) is 900 ℃ in the AN temperature, and annealing time is 1 minute.
The performance test results below in conjunction with to the ZAON film further specifies the beneficial effect of the invention:
We obtain when 1 megahertz by measuring metal one insulator, one metal (MTM) capacitor arrangement of Pt/ZAON/Pt, and the dielectric constant of ZAON is 18.2, and it is worth all greater than SiO
2Dielectric constant 3.9 and Al
2O
3Dielectric constant 8.9, be medium value.It satisfies the requirement of high-dielectric coefficient grid dielectric material of future generation.
Fig. 3 shows, introduces high pure nitrogen in the growth room, and the silicon substrate temperature is brought up to 500 ℃ to strengthen the effect that nitrogen enters film.Fig. 3 is that the film growth of ZAON of 4 nanometer thickness is at the x-ray photoelectron spectroscopy of silicon substrate.Fig. 3 (a) is wide scintigram, (b) is nitrogen 1s photoelectron spectroscopy.The atom percentage concentration of nitrogen element in film is about 6%.The binding energy of nitrogen-atoms is 404.1eV, is high oxidation state.As seen the oxygen atom Cheng Jianwei N-O that nitrogen-atoms and electronegativity are bigger in the ZAON film.
Fig. 4 shows that Fig. 4 (a) represents is 1 minute HRTEM of short annealing figure under 800 ℃ of conditions of ZAON/Si in nitrogen atmosphere.Can see almost not having boundary layer, and non-crystal ZAON film is evenly smooth at the interface of ZAON/Si.Fig. 4 (b) shows is identical ZAON/Si sample 1 minute HRTEM of rapid thermal annealing figure under 950 ℃ of conditions in blanket of nitrogen.The ZAON film still keeps amorphous state, and boundary layer does not increase.
Fig. 5 shows that sample is through 800 ℃ of rapid thermal annealings of 1 minute.The shape of C-V curve shows that our prepared sample has the interface state density the end of than; Slow and the fixed charge density of insignificant voltage scanning.Equivalent oxide thickness EOT value is 1.03 nanometers, and flat band voltage is 0.50V.Because ZrO
2Have high oxygen diffusion rate, easily form the boundary layer of low-k, thereby be difficult to obtain less EOT value.Al
2O
3Film and the Si substrate between easily form high fixed charge density, can cause big flat band voltage.So the prepared ZAON film of the present invention has the ZrO of being better than
2And Al
2O
3Electric property.
3, beneficial effect:
From above-mentioned The performance test results to the ZAON film, can find out significantly that the present invention compared with prior art, have following advantage: NiZr aluminate film (ZAON) film of (1) preparation is amorphous state and has high thermodynamic stability, its crystallization temperature can bear the required annealing in process of complementary metal oxide semiconductors (CMOS) (CMOS) technology and non-crystallization more than 950 ℃; (2) dielectric coefficient is 18.2, and it is worth greater than SiO
2Dielectric coefficient 3.9 and Al
2O
3Dielectric coefficient 3.9, satisfied the requirement of high-dielectric coefficient grid dielectric material, in ZAON film preparation process,, form SiO hardly at the ZAON/n-Si interface owing to introduce nitrogen
2Boundary layer; (3) utilize the Pt/ZrAlO of this film preparation
3Metal-dielectric film of N/n-Si-semiconductor (MIS) structure, the EOT that shows ZAON after tested is less than 1.1nm, and under 1 volt of voltage, its leakage current is less than 30mA/cm
2Test to such an extent that equivalent oxide thickness (EOT) is 1.03nm corresponding to physical thickness 4 nanometer ZAON films, leakage current is 28.7mA/cm
2Above-mentioned every performance index have reached the higher level of the high-dielectric coefficient grid dielectric material research that colleague in the world obtains, the application request of the less demanding semiconductor MOS FET of power consumption can be satisfied simultaneously, the requirement of the follow-up high-temperature heat treatment of current semi-conductor industry can be satisfied substantially.The structure of utilizing the PLD method to be prepared into the ZAON/n-Si of the instructions for use of satisfying MOSFET is not appeared in the newspapers in the world as yet.
Four, drawing explanation:
Fig. 1: the present invention is used to prepare the structural representation of the PLD film growth system of ZAON dielectric film.The 1-ZAO ceramic target 2-laser beam 3-lens 4-vacuum pump 5-substrate table 6-backing material 7-resistance furnace 8-9-of growth room leads to nitrogen pore
Fig. 2: the dielectric loss of the dielectric constant of ZAON film is with frequency variation curve, and wherein X-axis is represented frequency (unit hertz), the normal (ε of unit of y axle (left side) expression dielectric
r) and y axle (right side) dielectric loss (the tan δ of unit).
Fig. 3: Fig. 3 is the x-ray photoelectron spectroscopy of the ZAON film growth of 4 nanometer thickness at silicon substrate.Fig. 3 (a) is wide scintigram, (b) is nitrogen 1s photoelectron spectrum, and wherein X-axis is represented binding energy (unit electron-volt), and the y axle is represented relative intensity (arbitrarily).
Fig. 4: the sectional drawing of the high resolution transmission electron microscopy (HRTEM) of 4 nanometer ZAON films.Fig. 4 (a) expression be ZAON-Si 1 minute HRTEM of rapid thermal annealing figure under 800 ℃ of conditions in blanket of nitrogen.Fig. 4 (b) shows is identical ZAON-Si sample 1 minute HRTEM of rapid thermal annealing figure under 950 ℃ of conditions in blanket of nitrogen.
Fig. 5: capacitance voltage C-V curve that 4 nanometer ZAON film growths record on the n-Si substrate and corresponding leakage current voltage J-V curve, wherein the x axle is represented grid voltage (unit volt), the y axle is represented electric capacity (unit pico farad).
Five, embodiment
Adopt pulsed laser deposition (PLD) technology, use ZrAlO
3Ceramic target prepares the method for NiZr aluminate film in blanket of nitrogen, its preparation process is:
1, the zirconium aluminate ceramic target is fixed on the target platform silicon substrate material is fixed on the substrate table, resistance furnace is placed in the substrate table below, target platform, substrate table, resistance furnace all are placed in the growth room, the left side, growth room has the hole of a logical oxygen, the right upper portion opening part is placed with the lens of quartz glass, and lower openings connects vacuum pump (mechanical pump and molecular pump);
2, with mechanical pump growth room 8 is vacuumized and reach 8Pa, vacuumize with molecular pump again and reach 1 * 10
-2Below the Pa;
3, in the growth room, charge into nitrogen, make in the thin film growth process, keep the blanket of nitrogen of 20Pa in the growth room;
4, with resistance furnace heated substrate platform, make the silicon substrate temperature be set in 500 ℃; Thin film deposition is made structure and electrical characterization on the n type silicon chip that hydrofluoric acid corroded, as: XRD and capacitance-voltage C-V measure; Or be deposited on Pt/TiO
2/ SiO
2/ Si substrate is used as the measurement of dielectric constant and dielectric loss; The concentration that nitrogen enters film can reach atom number percent concentration about 6%.
5, use the KrF excimer laser, wavelength is 248nm, pulse duration 30ns, and single pulse energy 50-600mJ, energy density is 2.0J/cm
2, start laser, make laser beam pass through the quartz glass lens focus on the zirconium aluminate target, in film-forming process, target platform and substrate rotate with constant speed, make the laser beam plasma be deposited on the silicon substrate equably, make the ultrathin membrane that thickness is 4nm, cool to room temperature in position;
6, with the NiZr aluminate film with short annealing heat-treatment furnace in blanket of nitrogen 900 ℃, annealed 1 minute.Can obtain several
There is not SiO
2The ZAON/n-Si structure of boundary layer.
Above-mentioned described NiZr aluminate ceramic target is by ZrO
2And Al
2O
3Powder in 1: 1 ratio, after fully mixing with ball milling, is cold-pressed into disk with 12MPa pressure, makes in 6 hours at 1250 ℃ of following sintering then; Described backing material is a n type silicon chip (100) of selecting 3 Ω cm for use, cleans 4 minutes twice of continuous wash with acetone in ultrasonic device, cleaned 5 minutes in ultrasonic device with deionized water then, clean twice, with flow deionized water flushing 2 times, remove the SiO on surface at last with hydrofluoric acid again
2
Claims (8)
1, a kind of high-dielectric coefficient grid dielectric material NiZr aluminate film that is applied to metal-oxide-semiconductor field effect transistor, it is characterized in that the hundreds of minutes specific concentrations of nitrogen atoms of elements in film are 6%, the binding energy of nitrogen-atoms is 404.lev, it is high oxidation state, film thickness is 4nm, its crystallization temperature can bear the required annealing in process more than 950 ℃ of CMOS (Complementary Metal Oxide Semiconductor) technology and non-crystallization, dielectric coefficient is 18.2, its equivalent oxide thickness is 1.03nm, depress at 1 voltaism, its leakage current is 28.7mA/cm
2
2, a kind of preparation method who is applied to the high-dielectric coefficient grid dielectric material NiZr aluminate film of metal-oxide-semiconductor field effect transistor, it is characterized in that adopting pulsed laser deposition technique, use the zirconium aluminate ceramic target, preparation NiZr aluminate film in blanket of nitrogen, concrete steps are as follows:
(1) the zirconium aluminate ceramic target is placed on the target platform (1), silicon substrate (6) is placed on the substrate table (5), resistance furnace (7) is placed on the substrate table below, target platform (1), substrate table (5), silicon substrate (6), resistance furnace (7) all are placed in the growth room (8), the hole (9) that a logical nitrogen is arranged in the left side, growth room, the right upper portion opening is placed lens (3), and lower openings connects vacuum pump (4);
(2) with mechanical pump growth room (8) are vacuumized and reach below the 10Pa, vacuumize with molecular pump again and reach 1 * 10
-2Pa;
(3) in growth room (8), pour high pure nitrogen from logical nitrogen pore (9), make the blanket of nitrogen that keeps 18-25Pa in the growth room;
(4) with resistance furnace (7) heated substrate platform (5), make silicon substrate reach 300 ℃-800 ℃ of design temperatures;
(5) starting impulse laser, laser beam (2) scioptics are accumulated on the zirconium aluminate target, in film-forming process, target platform (1) and substrate table (5) are with constant speed rotation, thereby make the laser beam plasma be deposited on the silicon substrate equably, make the film that thickness is 4nm-10nm, and cool to room temperature in position;
(6) with film with the short annealing heat-treatment furnace in blanket of nitrogen under 800 ℃-950 ℃, short annealing 0.5-3 minute.
3, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the described zirconium aluminate ceramic target of step (1), is to use pure ZrO
2And Al
2O
3Powder is pressed 1: 1 mol ratio after ball milling mixes, and is cold-pressed into disk under 10-15MPa pressure, makes at 1200-1300 ℃ of following sintering 5-8 hour then.
4, the preparation method of NiZr aluminate film according to claim 2, it is characterized in that the described silicon substrate material of step (1) is the n-Si (100) that selects resistance 2-3 Ω cm for use, through acetone or alcohol ultrasonic cleaning 3-5 minute, twice of continuous wash, used the deionized water ultrasonic cleaning then 3-5 minute, continuous wash twice again with the deionized water rinsing that flows, is removed the SiO on surface at last with hydrofluoric acid
2
5, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the nitrogen that charges in the step (3) is 20Pa in growth room (8).
6, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the resistance furnace described in the step (4) can any temperature keep constant heating silicon substrate between 20 ℃-900 ℃, and design temperature is 500 ℃.
7, the preparation method of NiZr aluminate film according to claim 2, it is characterized in that the pulse laser described in the step (5) is a krypton fluoride excimer laser, its wavelength 248nm, pulse duration 30ns, single pulse energy 50-600mJ, energy density 2.0J/cm
2
8, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the short annealing processing stove of the aftertreatment technology employing of film in the step (6) is that annealing temperature is 900 ℃ in blanket of nitrogen, and annealing time is 1 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN03113462.9A CN1208842C (en) | 2003-05-15 | 2003-05-15 | Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN03113462.9A CN1208842C (en) | 2003-05-15 | 2003-05-15 | Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN1450661A CN1450661A (en) | 2003-10-22 |
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