CN1458679A - Method for producing contact plug - Google Patents
Method for producing contact plug Download PDFInfo
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- CN1458679A CN1458679A CN 02119843 CN02119843A CN1458679A CN 1458679 A CN1458679 A CN 1458679A CN 02119843 CN02119843 CN 02119843 CN 02119843 A CN02119843 A CN 02119843A CN 1458679 A CN1458679 A CN 1458679A
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Abstract
This invention discloses a method for manufacturing contact plugs, among which, a dielectric layer with a contact open-end is formed on a semiconductor substrate with a conduction zone exposed in the contact open-end. A first for ward metal layer with a second one is formed on the side and the bottom of the said dielectric layer and the open-end, a first electro-sizing treatment turns the second metal layer into a first metal nitride blocking layer, a heat treatment forms metallic silicon on the said conduction zone, a third progressive metal layer is formed on the said first metal nitride blocking and turned into second metal nitride blocking layer by a second electrosizing treatment. The conductive layer is on the structure to be flattened on the top surface to remove the layers for exposing the said dielectric layer.
Description
Technical field
The invention relates to a kind of semiconductor, and particularly relevant for a kind of method of making contact plunger.
Background technology
Integrated circuit be fabricated to combination as transistorized various devices, and many chips are contained on the single wafer.In the manufacture craft of making integrated circuit, after being manufactured in the silicon base as transistorized device out of the ordinary, it must link together to carry out required circuit function.This connects manufacture craft and is commonly referred to as " metallization ", and utilizes the little shadow of various differences and deposition technique and carry out.
Contact plunger forms to be connected at formation solid-state electronic between bed device down and upper strata connecting lead wire.The manufacturing of contact plunger generally involves to form and is opened on dielectric layer, and this opening is by being filled up or insert as metal levels such as aluminium or tungsten.Yet the aluminium of contact plunger or tungsten ion can migrate in the silicon base through doped region, and cause the short circuit to substrate.For short circuit is minimized, some manufacture craft can deposit barrier layers before deposition of aluminum or tungsten.One of resistance barrier material is TiN.Though TiN tool good barrier layer with respect ability, it must be enough thick in effectively to treat as barrier layer.Even when integrated circuit (IC) apparatus defines more smallly, the diameter of contact plunger diminishes and is more crucial.Therefore, thick TiN resistance barrier metal level is undesired in high density integrated circuit having.Can find that the nitrogen in TiN improves resistance barrier function, just, when the increase of the nitrogen content in TiN, resistance barrier effect also increases.One of method be cloth plant nitrogen to the TiN to increase resistance barrier effect and to reduce TiN resistance barrier metal layer thickness to meet high integrated structure demand.It is to carry out nitrogen electricity slurry to handle in the gas of hydrogen that cloth is planted nitrogen to the method for TiN.Now, might form thin TiN resistance barrier metal level to meet the high density integrated circuit having demand.
The another kind of resistance barrier metal level that generally uses is metallorganic CVD titanium oxide (MOCVD-TiN).The MOCVD-TiN material comprises the impurity as carbon and oxygen, thereby the resistance value of MOCVD-TiN material is very high.For reducing resistance value, one of method is to utilize the electricity slurry gas that comprises nitrogen or ammonia to handle barrier layer to remove these impurity.Yet, continuing electricity slurry gas treatment and come, MOCVD-TiN thickness reduces in essence, thereby formed processings back MOCVD-TiN layer has suitable low impedance value, however its thickness is not enough to treat as effectively barrier layer.Thereby one of method is to deposit the 2nd MOCVD-Ti layer, and then electricity slurry gas treatment forms the resistance barrier metal level of desired thickness to treat as barrier layer effectively to remove impurity.
The effect of contact is limited by the contact impedance value between the doped region in resistance barrier metal level and substrate.This contact impedance value in positive doped region greater than negative doped region.The contact impedance value is particular importance in CMOS (complementary golden oxygen silicon) technology, and it comprises the resistance barrier metal level with positive doped region and negative doped region.One of method that reduces the contact impedance value is to deposit conformal (conformal) heat resistanceheat resistant (refractory) metal level in opening, then utilizes heat treatment to form the silicon metallizing compound with this heat resistanceheat resistant metal level of annealing with the reaction between activator metal and silicon.Because the silicon metallizing compound has low impedance value, thereby the contact impedance value can reduce.Yet a problem of above-mentioned contact plunger method is, provides the power of the imperfect attachment between dielectric layer and tungsten layer at the barrier layer of gained after the heat treatment.
The applicant finds that in heat treatment the oxygen that comes from surrounding environment can form oxidation film on the surface that contacts barrier layer with resistance barrier metal reaction.The problem of formed oxide is that it has the zeta value that approximates in order to the tungsten layer that fills up contact openings.Because barrier layer is to the similar zeta value of tungsten layer, it can be mutually exclusive.Thereby the oxidation film that is formed on the barrier layer makes tungsten layer can't be attached on the surface of barrier layer.Thereby the space is formed in the conductor layer, causes the electron transfer error.Because oxidation film is because zeta value and tool imperfect attachment ability, dielectric layer with contact in tungsten layer between adhere to bad.Because as existing high thermal enlargement difference of coefficients between the conductor layer of tungsten and dielectric layer, in subsequent treatment in the future, because the thermal stress that thermal enlargement caused will become big.Thereby traditional barrier layer ruptures because of resisting thermal enlargement.Thereby, because resistance barrier metal-layer structure is destroyed, its promote from conductor layer come as aluminium or tungsten atom plasma or atom diffusion to substrate, cause the device short circuit.Because the lattice structure of conductor layer is destroyed, it causes owing to electron transfer forms the space, and causes the error of device.
Summary of the invention
Because above-mentioned problem the invention provides solution to the problems described above.
In view of this, main purpose of the present invention is exactly to provide a kind of contact plunger method of making to be limited in the electron transfer of the conductive material in the contact plunger.
The invention provides and form contact plunger to reduce the improvement method of contact impedance value.Thereby RC can go up minimizing time of delay.Thereby the service speed of device can increase in essence.
The method that the invention provides formation contact resistance barrier metal level makes and avoids hindering the fracture that hinders metal level or breaking to improve the degree of adhering between dielectric layer and this conductive layer.Thereby the reliability of device increases.
The invention provides the method that forms contact resistance barrier metal level and fill up ability, and increase degree of the adhering to ability between dielectric layer and this conductive layer, can avoid the generation in space with the space of improving conductive material.Thereby can limit the device error that causes by electron transfer, and increase the reliability of semiconductor device.
According to one of preferred embodiment, the invention provides the improvement method of making contact plunger.The semiconductor-based end with a conduction region is provided, and dielectric layer is formed in the whole substrate; This dielectric layer of etching is to form contact openings, and wherein this conduction region is exposed in this contact openings.Utilize the prerinse manufacture craft removing residue, otherwise will increase the contact impedance value.Contact openings is covered with first along the shape metal level.Then, the deposition second suitable shape metal level is on this first suitable shape metal level; Then, carrying out one first electricity slurry handles to convert this second suitable shape metal level to one first metal nitride barrier layer.This first electricity slurry is handled and is better comprised: the electricity slurry gas that comprises nitrogen and hydrogen.Carry out a heat treatment with trigger this first along the reaction between this silicon in shape metal level and this conduction region forming a metal silicide on this conduction region, and minimizing contact impedance value.Then, the 3rd suitable shape layer metal deposition is on this first metal nitride barrier layer, and utilize similar in appearance to the electricity slurry gas that comprises nitrogen and hydrogen and handle, removing impurity, and convert the 3rd suitable shape metal level to second metal nitride barrier layer from the 3rd along the shape metal level; And then, the deposited conductor layer is to fill up this contact openings.
Understand, utilize method of the present invention with heat-treat this silicon of triggering in this conduction region and this first along the reaction of shape metal interlevel to form a metal silicide.Because this metal silicide has low impedance value, thereby can reduce the contact impedance value in essence.Thereby, can increase the service speed of device in essence.
Understand, utilize method of the present invention to be formed on the surface of second metal nitride barrier layer, make repulsion between second metal nitride barrier layer and conductive layer can limit effectively to fill up and promote degree of adhering between dielectric layer and conductive layer in the good space that helps conductive layer to heat-treat and then to form second metal nitride barrier layer oxygenerating thing film that exceeds.Because the zeta value difference heteropole of second metal nitride barrier layer and conductive layer is big, will have repulsion therebetween, thereby can not produce the space, and avoid the electron transfer error effectively.Because the degree of adhering between dielectric layer and conductive layer increases, first along the shape metal level, and the fracture of first and second metal nitride barrier layer also can effectively be avoided.Because first along the shape metal level, first and second metal nitride barrier layer can not rupture or break, and first and second metal nitride barrier layer can avoid metal ion or atom to be expanded to dielectric layer inside effectively, and avoids the short circuit of device.Because the lattice structure of the conductive layer in contact is not destroyed, and the first adjacent suitable shape metal level, first and second metal nitride barrier layer is not destroyed yet, and the space that can avoid causing because of electron transfer produces, thereby can limit the device error that is caused by electron transfer.Thereby the reliability of device can increase in essence.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, elaborate.
Description of drawings
Fig. 1 to Fig. 9 illustrates the profile according to the manufacturing contact plunger step of first preferred embodiment of the present invention.
Figure 10 to Figure 14 illustrates the profile according to the manufacturing contact plunger step of second preferred embodiment of the present invention.Label declaration:
100: substrate 102: conduction region
104: dielectric layer 106: photoresistance
108: 110: the first suitable shape metal levels of contact openings
112: the second along 114: the first metal nitride barrier layer of shape metal level
116: 118: the three suitable shape metal levels of metal silicide film
120: the second metal nitride barrier layer
The electricity slurry handled 122 in 125: the first: conductive metal layer
126: 127: the second electricity slurries of heat treatment are handled
150: contact plunger 200: substrate
202: conduction region 204: dielectric layer
208: 210: the first suitable shape metal levels of contact openings
214: multiple layer metal nitride barrier layer
216: 218: the three suitable shape metal levels of metal silicide film
220: metal nitride barrier layer 222: conductive metal layer
226: heat treatment 227: the electricity slurry is handled
250: contact plunger
Embodiment
With reference to preferred embodiment of the present invention, its example is shown in the accompanying drawing in detail.If possible, same reference numeral be used in icon with describe in to point to same or similar part.
Fig. 1 to Fig. 9 illustrates the profile according to the manufacturing contact plunger step of first preferred embodiment of the present invention.
With reference to figure 1, provide to have conduction region 102 substrate 100 formed thereon.Dielectric layer 104 by the low-k material of forming as SOP (spin-on-polymer) material is formed in the substrate 100.The CMP manufacture craft is in order to remove unnecessary dielectric layer 104 dielectric layer 104 planarizations are obtained flat surfaces as shown in Figure 1.
With reference to figure 2, photoresist layer is deposited on the dielectric layer 104.Photoresist layer shaping or one patterned are to form contact openings etch mask 106 as shown in Figure 2.Then, contact openings 108 is formed, and it utilizes dielectric layer 104 that contact openings etch mask 106 exposes in conduction region 102 is exposed to contact openings 108.Used etching process is preferably height and does not wait the tropism, and may carry out for the reactive ion etching (RIE) that utilizes suitable electricity slurry gas.
With reference to figure 3, then remove or peel off photoresistance 106, this removes manufacture craft and is preferably the dry ecthing manufacture craft of utilizing oxygen electricity slurry or the wet etching manufacture craft of using suitable solution.Pre-wash step is then carried out with from dielectric layer 104 surface clean residues, and the more important thing is, from the sidewall and the bottom erase residual thing of contact openings, otherwise will increase the contact impedance value.Pre-wash step comprises wet etching or dry ecthing manufacture craft, and wherein this pre-wash step is used the buffer oxide agent.In the dry ecthing manufacture craft, preferably use by the formed electricity slurry of argon gas gas.The first suitable shape metal level 110 of thin layer then is formed also conformal in dielectric layer 104, on the sidewall and bottom of contact openings 108.First along shape metal level 110, such as, formed by titanium (Ti) or tantalum (Ta).Then, the second suitable shape metal level 112 is formed at first along on the shape metal level 110.Second along shape metal level 112 the most handy MOCVD method depositions, it uses the lead as TDMAT (tetrakis-dimethylamido-titanium) or TDEAT (tetrakis-diethylamido-titanium) under about 400～450 ℃ temperature, and about 120～160 dusts of preferred thickness.The material of the second suitable shape metal level 112 better is made up of titanium or tantalum.
With reference to figure 4, carry out the first electric slurry and handle 125 to remove the impurity that is attached to the second suitable shape metal level 112, as carbon or oxide, then, the second suitable shape metal level 112 becomes the first thin metal nitride barrier layer 114, and thickness is reduced to the 40-60 dust.The preferable condition of the first electricity slurry processing 125 comprises: the electricity slurry gas that comprises nitrogen and hydrogen.First metal nitride barrier layer 114 has quite low resistance value.
With reference to figure 5, carry out heat treatment 126 to trigger at first on the conduction region 102 along the reaction between shape metal level 110 parts and the silicon in conduction region 102 with formation metal silicide film 116.Better be that this hot manufacture craft comprises rapid thermal treatment (RTP).RTP better is executed in: in the nitrogen, under about 550～700 ℃, continue about 3-60 second.Because metal silicide film 116 has low-impedance heat resistanceheat resistant metal, the contact impedance value reduces.
Be formed on first metal nitride barrier layer 114 along shape metal level 118 with reference to figure 6, the three.The 3rd material along shape metal level 118 is same as second material along shape metal level 112 in essence.The 3rd suitable shape metal level 118 deposits the about 120-160 dust of preferred thickness than good utilisation conventional deposition such as MOCVD.
With reference to figure 7, similarly, to carry out the second electricity slurry and handle 127 removing impurity, and be transformed into the second thin metal nitride barrier layer 120 along shape metal level 112 second, thickness is reduced to the 40-60 dust.The preferable condition of the second electricity slurry processing 127 comprises: the electricity slurry gas that comprises nitrogen and hydrogen.Second metal nitride barrier layer 120 has quite low resistance value.
With reference to figure 8, conductive metal layer 122 such as being tungsten, utilizes tradition as CVD or electrochemical precipitation process (electro-chemical deposition, ECD) method and being deposited on the dielectric layer 104 to fill up contact openings 108.Because second metal nitride barrier layer 120 is quite different with the zeta value of conductive metal layer 122,, cause good space to be filled up so can not repel each other.Thereby the degree of adhering to that dielectric layer 104 and conductive metal layer are 122 increases, and avoids the fracture of barrier layer effectively.
With reference to figure 9, carry out the cmp manufacture craft, in order to remove conductive metal layer 122, second metal nitride barrier layer 120, first metal nitride barrier layer 114 and first is along the part of shape metal level 110, up to exposing dielectric layer 104, and forms contact plunger 150.
Utilize mode of the present invention, carry out RTP and be formed on second metal nitride barrier layer, 120 surfaces with the restriction oxidation film, and promote the well attached of 122 of dielectric layer 104 and conductive metal layers with then forming second metal nitride barrier layer 120.Because avoid forming oxidation film on second metal nitride barrier layer 120, the zeta value that second metal nitride barrier layer 120 and conductive metal layer are 122 can be kept big-difference, thereby the repulsion of second 122 of metal nitride barrier layer 120 and conductive metal layers can be limited, thereby this condition promotes good space to fill up.Therefore, can avoid forming the space, thereby, can limit effectively because the device error that electron transfer causes.Because the big zeta value difference that second metal nitride barrier layer 120 and conductive metal layer are 122 is different, the degree of adhering to that dielectric layer 104 and conductive metal layer are 122 increases, and avoid first the fracture effectively along shape metal level 110, the first metal nitride barrier layer 114 and second metal nitride barrier layer 120.Because first along shape metal level 110, first metal nitride barrier layer 114 and second metal nitride barrier layer 120 can not rupture or break, first metal nitride barrier layer 114 and second metal nitride barrier layer 120 can avoid metal ion or atom to be expanded to dielectric layer 104 inside effectively, and avoid the short circuit of device.Because the lattice structure of the conductive metal layer in contact 122 is not destroyed, and first is not destroyed along shape metal level 110, first and second metal nitride barrier layer 114 and 120 yet, the space that can avoid causing because of electron transfer produces, thereby can limit the device error that is caused by electron transfer.Thereby the reliability of device can increase in essence.
Utilize mode of the present invention, the reaction that the silicon of execution RTP manufacture craft initiation conduction region 102 and the first suitable shape metal level are 110 is to form metal silicide film 116.Because the low-impedance heat resistanceheat resistant metal of metal silicide film 116 tools, the contact impedance value can reduce in essence, thereby RC can reduce time of delay in essence.Thereby the service speed of device can increase in essence.
Figure 10 to Figure 14 shows the profile according to the manufacture craft of the manufacturing contact plunger of second preferred embodiment of the present invention.
With reference to Figure 10, provide to have conduction region 202 substrate 200 formed thereon.Dielectric layer 204 by the low-k material of forming as SOP (spin-on-polymer) material is formed in the substrate 200.Little shadow and etching process are in order to form contact openings 208 in dielectric layer 204, in conduction region 202 is exposed to dielectric layer 204.Pre-wash step is in order to from dielectric layer 204 surface clean residues, and the more important thing is, from the sidewall and the bottom erase residual thing of contact openings, otherwise will increase the contact impedance value.Pre-wash step comprises wet etching or dry ecthing manufacture craft, and wherein this pre-wash step is used the buffer oxide agent.In the dry ecthing manufacture craft, better use by the formed electricity slurry of argon gas gas.The formation of the first suitable shape metal level 210 of thin layer and conformal are in dielectric layer 204, on the sidewall and bottom of contact openings 208.First along shape metal level 210, such as, formed by titanium (Ti) or tantalum (Ta).Then, multiple layer metal nitride barrier layer 214 is formed at first along on the shape metal level 210.The formation system of multiple layer metal nitride barrier layer 214, such as, utilize the MOCVD manufacture craft and deposit the second suitable shape metal level of forming by the titanium or the tantalum of about 120-160 dust thickness, then, this second suitable shape metal level of electricity consumption slurry gas treatment is to be transformed into metal nitride barrier layer with second along the shape metal level.Above-mentioned electricity slurry is handled and is better comprised: the electricity slurry gas that comprises nitrogen and hydrogen.Second the deposition and electricity slurry processing loop cycle along the shape metal level is such as the 1-3 cycle, up to forming desired thickness multiple layer metal nitride barrier layer 214.Then, carry out heat treatment 226 with trigger first on the conduction region 202 along the reaction between shape metal level 210 parts and the silicon in conduction region 202 with formation metal silicide film 216 '.Better be that this hot manufacture craft is rapid thermal treatment (RTP).RTP better is executed in: in the nitrogen, under about 550～700 ℃, continue about 3-60 second.Because metal silicide film 216 has low-impedance heat resistanceheat resistant metal, the contact impedance value reduces.
With reference to Figure 11, the 3rd along shape metal level 218, such as titanium or tantalum, is formed on the multiple layer metal nitride barrier layer 214.The 3rd suitable shape metal level 218 deposits the about 120-160 dust of preferred thickness than good utilisation conventional deposition such as MOCVD.
With reference to Figure 12, similarly, handle 227 to be transformed into thin metal nitride barrier layer 220 along shape metal level 218 along carrying out the electricity slurry on the shape metal level 218 with the 3rd the 3rd, thickness is reduced to the 40-60 dust.
With reference to Figure 13, conductive metal layer 222 such as being tungsten, utilizes tradition as CVD or electrochemical precipitation process (electro-chemical deposition, ECD) method and being deposited on the dielectric layer 204 to fill up contact openings 208.Because metal nitride barrier layer 220 is quite different with the zeta value of conductive metal layer 222,, cause good space to be filled up so can not repel each other.Thereby the degree of adhering to that dielectric layer 204 and conductive metal layer are 222 increases, and avoids the fracture of barrier layer effectively.
With reference to Figure 14, utilize the cmp manufacture craft removing conductive metal layer 222, metal nitride barrier layer 220, the multiple layer metal nitride barrier layer 214 and first part along shape metal level 210 are up to exposing dielectric layer 204.So can form contact plunger 250.
Utilize mode of the present invention, carry out RTP226 and be formed on metal nitride barrier layer 220 surfaces with the restriction oxidation film, to promote the well attached of 222 of dielectric layer 204 and conductive metal layers with then forming metal nitride barrier layer 220.Because avoid forming oxidation film on metal nitride barrier layer 220, the zeta value that metal nitride barrier layer 220 and conductive metal layer are 222 can be kept big-difference, thereby the repulsion of 222 of metal nitride barrier layer 220 and conductive metal layers can be limited, thereby this condition promotes good space to fill up.Therefore, can avoid forming the space, thereby, can limit effectively because the device error that electron transfer causes.Because the big zeta value difference that metal nitride barrier layer 220 and conductive metal layer are 222 is different, the degree of adhering to that dielectric layer 204 and conductive metal layer are 222 increases, and avoid first effectively along shape metal level 210, the fracture of multiple layer metal nitride barrier layer 214 and metal nitride barrier layer 220.Because first along shape metal level 210, multiple layer metal nitride barrier layer 214 can not rupture or break with metal nitride barrier layer 220, multiple layer metal nitride barrier layer 214 can avoid metal ion or atom to be expanded to dielectric layer 204 inside with metal nitride barrier layer 220 effectively, and avoids the short circuit of device.Because the lattice structure of the conductive metal layer in contact 222 is not destroyed, and the adjacent first suitable shape metal level 210, multiple layer metal nitride barrier layer 214 are not destroyed with metal nitride barrier layer 220 yet, the space that can avoid causing because of electron transfer produces, thereby can limit the device error that is caused by electron transfer.Thereby the reliability of device can increase in essence.
Utilize mode of the present invention, the reaction that the silicon of execution RTP manufacture craft 226 initiation conduction regions 202 and the first suitable shape metal level are 210 is to form metal silicide film 216.Because the low-impedance heat resistanceheat resistant metal of metal silicide film 216 tools, the contact impedance value can reduce in essence, thereby RC can reduce time of delay in essence.Thereby the service speed of device can increase in essence.
Even, though embodiments of the invention point to the method for making contact resistance barrier metal, known this skill person can understand, as other technology that connects in the formation of single/pair rag (damascene) technology, or involve to utilize and fill up the formation route (via) of opening or the other technology of connector as the conductive material of copper, tungsten or aluminium, also can be in order to enforcement the present invention.
Claims (18)
1, a kind of method of making contact plunger, it is characterized in that: this method comprises the following steps:
Provide and have conduction region semiconductor substrate formed thereon;
Form a dielectric layer in this substrate;
Form a contact openings on this dielectric layer, wherein this conduction region is exposed in this contact openings;
Form one first suitable shape metal level on this dielectric layer and this contact openings, wherein this first suitable shape metal level is as a metal barrier layer;
Form one second suitable shape metal level on this first suitable shape metal level, wherein this second suitable shape metal level utilizes the metal organic chemical deposition method and forms;
Carrying out one first electricity slurry handles to convert this second suitable shape metal level to one first metal nitride barrier layer;
Carry out a heat treatment with trigger this first along the reaction between this silicon in shape metal level and this conduction region to form a metal silicide on this conduction region;
Form one the 3rd suitable shape metal level on this first metal nitride barrier layer, wherein the 3rd suitable shape metal level utilizes the metal organic chemical deposition method and forms;
Carrying out one second electricity slurry handles to convert one second metal nitride barrier layer with the 3rd to along the shape metal level;
Form a conductor layer on this second metal nitride barrier layer and fill up this contact openings.
2. the method for claim 1, it is characterized in that: wherein this heat treatment comprises a rapid thermal treatment (RTP).
3. method as claimed in claim 2 is characterized in that: wherein this RTP is carried out under the 550-750 ℃ of temperature, and lasting 3-60 second.
4. method as claimed in claim 2 is characterized in that: wherein this first and second electricity slurry is handled and is comprised: the electricity slurry gas that comprises nitrogen and hydrogen.
5. the method for claim 1 is characterized in that: wherein this is the second and the 3rd along shape metal layer thickness 120-160 dust.
6. the method for claim 1 is characterized in that: the thickness 40-60 dust of this first and second metal nitride barrier layer wherein.
7. the method for claim 1 is characterized in that: wherein also comprise a pre-wash step before forming this first suitable step of shape metal level.
8. method as claimed in claim 7 is characterized in that: wherein this pre-wash step is used an electricity slurry gas that comprises argon gas.
9. the method for claim 1 is characterized in that: wherein this material of this conductor layer is gone out by selected in the group that comprises copper, aluminium and tungsten and its alloy.
10. the method for claim 1 is characterized in that: wherein this second and the 3rd material along the shape metal level comprises titanium or tantalum.
11. the method for claim 1 is characterized in that: wherein this a conduction region source or a grid structure.
12. a method of making contact plunger is characterized in that: this method comprises the following steps:
Provide and have conduction region semiconductor substrate formed thereon;
Form a dielectric layer in this substrate;
Form a contact openings on this dielectric layer, wherein this conduction region is exposed in this contact openings;
Form one first suitable shape metal level on this dielectric layer and this contact openings, wherein this first suitable shape metal level is as a metal barrier layer;
Form a multiple layer metal nitride barrier layer, wherein this multiple layer metal nitride barrier layer utilization deposits one second along the Multiple Cycle of shape metal level and the one first electricity slurry gas treatment that continues and form, and wherein this second utilizes the metal organic chemical deposition method and form along shape metal level;
Carry out a heat treatment with trigger this first along the reaction between this silicon in shape metal level and this conduction region to form a metal silicide on this conduction region;
Form one the 3rd suitable shape metal level on this multiple layer metal nitride barrier layer, wherein the 3rd suitable shape metal level utilizes the metal organic chemical deposition method and forms;
Carrying out one second electricity slurry handles to convert a metal nitride barrier layer with the 3rd to along the shape metal level;
Form a conductor layer on this metal nitride barrier layer and fill up this contact openings.
13. method as claimed in claim 12 is characterized in that: wherein this heat treatment comprises a rapid thermal treatment (RTP).
14. method as claimed in claim 13 is characterized in that: wherein this RTP is carried out under the 550-750 ℃ of temperature, and lasting 3-60 second.
15. method as claimed in claim 12 is characterized in that: wherein this first and second electricity slurry is handled and is comprised: the electricity slurry gas that comprises nitrogen and hydrogen.
16. method as claimed in claim 12 is characterized in that: wherein this material of this conductor layer is gone out by selected in the group that comprises copper, aluminium and tungsten and its alloy.
17. method as claimed in claim 12 is characterized in that: wherein this second and the 3rd material along the shape metal level comprises titanium or tantalum.
18. method as claimed in claim 12 is characterized in that: wherein this a conduction region source or a grid structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02119843 CN1275313C (en) | 2002-05-15 | 2002-05-15 | Method for producing contact plug |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02119843 CN1275313C (en) | 2002-05-15 | 2002-05-15 | Method for producing contact plug |
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| Publication Number | Publication Date |
|---|---|
| CN1458679A true CN1458679A (en) | 2003-11-26 |
| CN1275313C CN1275313C (en) | 2006-09-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02119843 Expired - Lifetime CN1275313C (en) | 2002-05-15 | 2002-05-15 | Method for producing contact plug |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100424835C (en) * | 2004-08-19 | 2008-10-08 | 集成工艺系统株式会社 | Deposition method of TiN film having a multi-layer structure |
| CN106206273A (en) * | 2015-06-01 | 2016-12-07 | 富士电机株式会社 | The manufacture method of semiconductor device |
| CN106486416A (en) * | 2015-09-02 | 2017-03-08 | 中芯国际集成电路制造(北京)有限公司 | The forming method of metal interconnection structure |
| CN113809083A (en) * | 2020-06-11 | 2021-12-17 | 联华电子股份有限公司 | Static random access memory and manufacturing method thereof |
-
2002
- 2002-05-15 CN CN 02119843 patent/CN1275313C/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100424835C (en) * | 2004-08-19 | 2008-10-08 | 集成工艺系统株式会社 | Deposition method of TiN film having a multi-layer structure |
| CN106206273A (en) * | 2015-06-01 | 2016-12-07 | 富士电机株式会社 | The manufacture method of semiconductor device |
| CN113436969A (en) * | 2015-06-01 | 2021-09-24 | 富士电机株式会社 | Method for manufacturing semiconductor device |
| CN106486416A (en) * | 2015-09-02 | 2017-03-08 | 中芯国际集成电路制造(北京)有限公司 | The forming method of metal interconnection structure |
| CN106486416B (en) * | 2015-09-02 | 2021-04-02 | 中芯国际集成电路制造(北京)有限公司 | Method for forming metal interconnection structure |
| CN113809083A (en) * | 2020-06-11 | 2021-12-17 | 联华电子股份有限公司 | Static random access memory and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1275313C (en) | 2006-09-13 |
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