CN1451169A - Control system for indirectly heated cathode ion source - Google Patents
Control system for indirectly heated cathode ion source Download PDFInfo
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- CN1451169A CN1451169A CN01809075A CN01809075A CN1451169A CN 1451169 A CN1451169 A CN 1451169A CN 01809075 A CN01809075 A CN 01809075A CN 01809075 A CN01809075 A CN 01809075A CN 1451169 A CN1451169 A CN 1451169A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
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Abstract
A cathode in an indirectly heated cathode ion source is supported by at least one rod or pin. The cathode is preferably in the form of a disk, and the support rod is smaller in diameter than the disk to limit thermal conduction and radiation. In one embodiment, the cathode is supported by a single rod at or near its center. The support rod may be held by a spring-action clamp for simple and reliable clamping and unclamping. The disk shaped cathode and the support rod may be fabricated as a single piece. A filament that emits electrons thermionically may be disposed around the rod in close proximity to the cathode.
Description
The related application that relates to
The application requires to submit on May 17th, 2000, sequence number be 60/204,936 provisional application and submit on May 17th, 2000, sequence number is the rights and interests of 60/204,938 temporary patent application.
Technical field of the present invention
The present invention relates to ion source, this ion source is applicable to ion implanter, the particularly the sort of ion source that has non-direct heated cathode.
Background technology
Ion source is the key component of ion implanter.Ion source produces an ion beam, and ion beam passes the beam current tube of ion implanter and is sent to semiconductor wafer.Ion source should be able to produce stable with limit clearly ion beam, to be applied to various ion and to extract voltage out.In a semiconductor production equipment, ion implanter comprises ion source, and all needing to use needs maintenance and repair for a long time and not.
Ion implanter is usually with the ion source that has directly-heated cathode, and the silk that it is characterized in that an emitting electrons is installed in the ionogenic arc chambers and is exposed to the plasma slab that a height that is positioned at lonely shape chamber corrodes.This direct heated cathode constitutes the wire that diameter is less relatively, so just can not use in a relatively short time in the environment of the height corrosion of arc chambers.So directly the ionogenic life-span of heated cathode is restricted.
In order to improve the ionogenic life-span, non-direct heated cathode ion source grows up in ion implanter.Non-direct heated cathode comprises a relatively large negative electrode, and negative electrode is by electron bombard heating and radiation hot electron from filament.The plasma of this filament and arc light chamber is isolated, and so just can be arranged a long useful life.Although negative electrode be exposed to the arc light chamber high corrosive environment in, its relatively large structure can make it use a very long period.
The negative electrode of indirectly heated cathode ion source must and be connected on the power supply with its surrounding environment electric insulation, also will be with the surrounding environment thermal insulation can not emitting electrons in case its temperature is reduced.In known prior art, non-direct heated cathode is a discoidal negative electrode, and the disc negative electrode light-wall pipe that diameter of periderm is identical with the disk negative electrode substantially outside it supports.This Guan Youyi very thin wall can reduce the heat dissipation from hot cathode like this to reduce its intersection contact area.The typical feature of this thin-walled is on its length direction cutouts to be arranged, the heat dissipation that this can play insulation partition effect and can reduce negative electrode.
This light-wall pipe that is used to support negative electrode is emitting electrons not, but it has a big surf zone, and major part is in the condition of high temperature.This zone is by the radiation dissipated heat, and this is the main path of negative electrode dissipated heat.Large diameter light-wall pipe makes its size increase on the one hand, has also increased the complexity of the structure that is installed to negative electrode in addition.Known cathode support parts comprise three parts and need thread connection.
The typical feature of this indirectly heated cathode ion source comprises an A-power supply, bias supply and an arc light power supply, also needs a control system to regulate these power supplys.The previous known control system that is used for indirectly heated cathode ion source is to regulate power supply to obtain a constant arc current, using the trouble that this constant arc current system brought is, if beam current tube is by tuning, the line electric current measured in the beam current tube downstream can increase, the increase of this electric current or be owing to tuning the increase of the current delivery rate by beam current tube is caused, or be to increase from the magnitude of current that ion source is extracted out to cause.Since line electric current and current delivery are subjected to so influence of multi-parameter, tuning big line current delivery is difficult.
Before being used for the ionogenic solution of direct heated cathode formula is to control constant extraction current source rather than control constant arc current source.In the situation of the constant extraction current source of be useful on control, it is the Bernas type ion source that directly heats filament that control system drives a negative electrode.
Summary of the invention
According to an aspect of the present invention, the cathode assembly that is used for indirectly heated cathode ion source comprises that a negative electrode divides device, a negative electrode and a support bar that is fixedly installed on the negative electrode; A filament that is used for emitting electrons, it is installed in the outer position of dividing the support bar of device near negative electrode of arc light chamber; With a cathode insulation body that divides the negative electrode of device to be provided with on every side along negative electrode, be used for negative electrode and arc light chamber electric insulation and thermal insulation.
Negative electrode divides device can comprise that a non-direct heated cathode and one are fixedly coupled to the support bar that non-direct heated cathode is used to support the negative electrode that is positioned at ion source arc light chamber.In one embodiment, support bar is connected on the face of the negative electrode that deviates from the arc light chamber.Support bar can mechanically support negative electrode so that conduction.Negative electrode can be a plate-like, support bar along its be connected to or near negative electrode in the heart.Support bar also can be columniform, and the diameter of negative electrode should be greater than the diameter of cylinder support bar.In a concrete scheme, the diameter of negative electrode is at least more than four times of cylinder support bar diameter.Negative electrode divides device can also comprise that a spring clip is used for fixing support bar.
One filament around support bar near the place of negative electrode with the arc light chamber in the mode of plasma slab insulation install.Filament is by the conductive materials manufacturing, and comprises a loop, and the internal diameter of loop is more than or equal to the diameter of support bar.The filament sectional area is along may having nothing in common with each other on the filament length direction, but it is in arc-shaped bend place area minimum.
The cathode insulation parts make negative electrode and arc chambers housing electric insulation and thermal insulation.In one embodiment, the cathode insulation parts comprise the opening of a diameter more than or equal to the negative electrode diameter.One spatial joint clearance that can reduce the conduction of temperature is arranged between cathode insulation parts and negative electrode.The method indigo plant that the cathode insulation parts have the ion plasma in a sidewall that is substantially tubulose and sidewall that makes the cathode insulation parts and the arc chambers to isolate.For being increased in the path between negative electrode and the arc chambers housing, one side method indigo plant can deviate from the groove that has of ion plasma.
According to another aspect of the present invention, a kind of method that supports and add the thermionic ion source negative electrode comprise with one be fixed on the negative electrode bar and with the anticathode bombardment of electronics.According to a further aspect in the invention, be used for the support bar, that an ionogenic negative electrode divides device to comprise that a negative electrode, is fixedly coupled on the negative electrode and be used to make negative electrode and arc chambers housing electric insulation and heat-insulating cathode insulation parts and a non-direct heater block that is used for non-direct heated cathode.
Description of drawings
For understanding the present invention better, please refer to accompanying drawing, accompanying drawing of the present invention is incorporated in this, and they are:
Fig. 1 is the block diagram of indirectly heated cathode ion source according to an embodiment of the invention;
Fig. 2 A and Fig. 2 B are respectively the front view and the perspective views of negative electrode as shown in Figure 1;
Fig. 3 A to Fig. 3 D is respectively perspective view, front view, internal organs view and the end view of ionogenic filament as shown in Figure 1;
Fig. 4 A to Fig. 4 C is respectively perspective view, profile and the part sectioned view of ionogenic cathode insulation device as shown in Figure 1;
Fig. 5 summary shows the feedback loop that is used to control the extraction electric current of ion source controller;
Fig. 6 summary shows the operation relation according to the ion source controller shown in Figure 1 of first kind of control algolithm; With
Fig. 7 summary shows the work relationship according to the ion source controller shown in Figure 1 of second kind of control algolithm.
Detailed Description Of The Invention
Fig. 1 shows a non-direct-heating type ion source according to an embodiment of the invention.Have an arc light chamber housing 10 of extracting hole 12 out and determined an arc light chamber 14.One negative electrode 20 and a reflecting electrode 22 are installed in the arc light chamber 14.Reflecting electrode 22 is electric insulations.One cathode insulation device 24 makes negative electrode 20 and arc light chamber housing 10 electric insulations and thermal insulation.Negative electrode 20 and insulation device 24 are opened by spatial joint clearance, in case the heat conduction.
One to be installed in arc light chamber 14 outer and give negative electrode 20 heating with the very approaching filament 30 of negative electrode 20.
Ionized gas passes through a gas access 34 by gas source afferent arc optical cavity chambers 12 32.In another unshowned structure, arc light chamber 14 can with a vaporizer combination, vaporizer can vaporize a kind of can ionization in the arc light chamber material.
One arc light power supply 50 comprises that a positive pole and that is connected to arc light chamber housing 10 is connected to the negative pole of negative electrode 20.Arc light power supply 50 has the rated value of 100 volts of voltages, 10 amperes in electric current, also can work 50 volts.The electronics that 50 acceleration of arc light power supply are launched by negative electrode 20 enters the ion plasma in the arc light chamber.One bias supply 52 comprises that a positive pole and that is connected to negative electrode 20 is connected to the negative pole of filament 30.It is that 600 volts of electric currents are 4 amperes rated value that bias supply 52 can be operated in voltage, also can be operated in electric current and be approximately 2 amperes and voltage and be approximately 400 volts.Bias supply 52 quickens by filament 30 electrons emitted to negative electrode 20 so that to negative electrode 20 heating.One A-power supply 54 has an output electrode that is connected to filament 30.It is that 5 volts of electric currents are 200 amperes rated value that A-power supply 54 can be operated in voltage, also can be operated in the scope that heater current is approximately 150 to 160 amperes.A-power supply 54 gives filament 30 heating, so just can produce the electronics that quickens to negative electrode 20 so that give negative electrode 20 heating.One magnet 60 is created in the magnetic field B in the arc light chamber 14, and the direction in magnetic field is as shown in arrow 62.The direction of magnetic field B also can be reciprocal, and this is to not influence of ionogenic work.
One extracts electrode out, here is that earth polar 70 and suppresses electrode 72, and they are installed in the front of extracting hole 12 out.The earth polar 70 and the inhibition utmost point 72 have a hole respectively, and these holes and extraction hole 12 are aimed at so that limit ion beam 74 better.
Extract power supply 80 out and comprise that is passed the negative pole that a general sensing resistor 110 is connected to the positive pole of arc light chamber housing 10 and is connected to earth polar 70.It is that 70 kilovolts of (kV) electric currents are the rated value of 25 to 200 milliamperes that extraction power supply 80 can be operated in voltage.Extract power supply 80 out the extraction voltage of extracting ion beam 74 from arc light chamber 14 out is provided.Extracting voltage out can require to be conditioned according to the energy of ions in the ion beam 74.
Suppress power supply 82 and comprise that one is connected to the negative pole of inhibition electrode 72 and the positive pole of a ground connection.Suppress power supply 82 can export-2kV is to the voltage of-30kV.The ion that the inhibition electrode 72 of negative sense biasing suppresses in the ion beam 74 moves.Should be understood that the rated voltage of power supply 50,52,54,80 and 82 and rated current and operating voltage and electric current just provide by way of example, do not limit protection scope of the present invention here.
A control algolithm is regulated the output of power supply according to difference.An embodiment of control algolithm is with proportion integration differentiation (PID) loop as shown in Figure 5, and the effect of pid loop is to keep the extraction electric current I that produces ion beam
EExtract electric current I out in reference
ENear the REF.Pid loop reaches adjusting induction extraction electric current I by the output of continuous adjusting PID calculating section 224
EConstantly approach with reference to extracting electric current I out
EREF.PID calculating section 224 is accepted the difference current signal I of feedback from ion generating apparatus 230 (Fig. 1)
EERROR, I
EERROR is that electric current I is extracted in induction out
EExtract electric current I out with reference
EREF's is poor.The output of pid loop can be from ion source controller 100 to arc light power supply 50, bias supply 52 and A-power supply 54 to be to keep extracting out electric current I
EExtract electric current I out near reference
EREF.
According to first kind of control algolithm, the bias current I that provides by bias supply 52 (Fig. 1)
BAccording to extracting electric current difference I out
EThe variation of ERROR and changing so just can be controlled the extraction electric current I
EExtract electric current I out with reference
EREF is identical or approaching.Bias current I
BRepresentative is flowed to the electron stream of negative electrode 20 by filament 30.Especially, extract electric current I out for increasing sometimes
EBias current I
BCan increase and sometimes for reducing to extract out electric current I
EBias current I
BCan reduce.Bias voltage V
BBe unfixed and according to required bias current I
BDifference and change.In addition, according to first kind of control algolithm, the heater current I that provides by A-power supply 54
FRemain on a steady state value, thread terminal voltage V
FBe unfixed, and the arc voltage V that provides by arc light power supply 50
AProtect a steady state value, arc current I
ABe unfixed.The advantage of first kind of control algolithm is that performance is good, simple and low-cost.
Working method according to the ion source controller 100 of first kind of control algolithm is illustrated by summary in Fig. 6.The voltage V of the entitling in Fig. 1 of input
1, V
2The calculating that is used to extract out electric current calculating unit 220 with resistance R.As input resistance R during based on the value of resistance 110 (Fig. 1), input voltage V
1And V
2Calculated a value.Induction is extracted electric current out and is calculated by following formula: I
E=(V
1-V
2)/R.If extracting power supply 80 out is designed to and can provides one can represent the extraction electric current I to ion source controller 100
ECurrent sensing signal, top calculating can be omitted.Electric current I is extracted in induction out
EExtract electric current I out with reference
EREF is input to difference parts 222.With reference to extracting electric current I out
EREF is a value according to needed extraction current settings.Extract the difference I of electric current out
EERROR extracts electric current I out for induction
EDeduct with reference to extracting electric current I out
EThe difference of REF is calculated by following formula: I
EERROR=I
E-I
EREF.Extract the difference I of electric current out
EERROR and three Control Parameter (K
PB, K
IBAnd K
DB) be imported into PID calculating unit 224a.Three Control Parameter are optimized to obtain an Optimal Control result.Especially, K
PB, K
IBAnd K
DBTo select meticulously, so that produce allowing that rise time, overshoot and steady state error have the control system of transient response.The output signal of PID calculating unit is determined by following formula:
O
b(t)＝K
PB?e(t)+K
IB?e(t)dt+K
DB?de(t)/dt
Wherein e (t) is instantaneous extraction electric current difference, O
b(t) be instantaneous output control signal.Instantaneous output signal O
b(t) be input to bias supply 52, and a signal is provided, according to this signal bias current I
BBe adjustable to make and extract electric current difference minimum out.Output control signal O
b(t) amplitude and polarity are determined according to the control needs of bias supply 52.Yet generally speaking, when induction extraction electric current I
EExtract electric current I out than reference
EREF hour output control signal O
b(t) can cause bias current I
BIncrease, when electric current I is extracted in induction out
EExtract electric current I out than reference
EOutput control signal O when REF is big
b(t) can cause bias current I
BReduce.
Heater current I
FWith arc voltage V
ARemain on a steady state value by filament and 225 controls of arc light power-supply controller of electric, as shown in Figure 6.Be imported into filament and arc light power-supply controller of electric 225 according to the selected Control Parameter of the needs of ion source condition of work.Control signal O by controller 225 outputs
f(t) and O
a(t) be input to A-power supply 54 and arc light power supply 50 respectively.
According to second kind of algorithm, by the heater current I of A-power supply 54 (Fig. 1) output
FAccording to extracting electric current difference I out
EThe difference of ERROR and changing is extracted electric current I out with control like this
EEqual or approach with reference to extracting electric current I out
EREF.Especially, for making the extraction electric current I
EIncrease heater current I
FCan reduce and for making the extraction electric current I
EReduce heater current I
FCan increase.Thread terminal voltage V
FBe constant.In addition, according to second kind of algorithm, by the bias current I of bias supply 52 outputs
BKeep steady state value, bias voltage V
BVoltage V constant and that provide by arc light power supply 50
AKeep steady state value, arc current I
AConstant.
Working method according to the ion source controller 100 of second kind of control algolithm is illustrated by summary in Fig. 7.The work of extracting electric current calculating unit 220 out also is based on voltage V as first kind of control algolithm
1, V
2Determine an induction extraction electric current I with resistance R
EElectric current I is extracted in induction out
EExtract electric current I out with reference
EREF is input to difference calculating unit 226.Extract electric current difference I out
EERROR is with reference to extracting electric current I out
EREF deducts induction and extracts electric current I out
EDifference, calculate by following formula: I
EERROR=I
EREF-I
EThis calculating is different from the difference of first kind of algorithm calculates, and operand is opposite here.Operand is to extract electric current I out for control loop produces one on the contrary
EWith control variables (here be I
F) between opposite relation, and be different from the direct relation of first kind of algorithm.Extract electric current difference I out
EERROR and three Control Parameter are input to PID calculating unit 224b.Parameter K
PF, K
IFAnd K
DFNot needing has identical value with the Control Parameter of first kind of algorithm because they be according to second kind of control algolithm select so that ion source is operated in the parameter of optimum state.Yet PID calculating unit 224b can be identical, is calculated as follows:
O
F(t)＝K
PF?e(t)+K
IF?e(t)dt+K
DFde(t)/dt
An instantaneous output control signal O
F(t) offer A-power supply, and a signal is provided, according to this signal heater current I
FBe conditioned so that extract electric current difference minimum out.Output control signal O
F(t) amplitude and polarity are determined according to the control needs of A-power supply 54.Yet generally speaking, when induction extraction electric current I
EExtract electric current I out than reference
EREF hour output control signal O
F(t) can cause heater current I
FReduce; When electric current I is extracted in induction out
EExtract electric current I out than reference
EOutput control signal O when REF is big
F(t) can cause heater current I
FIncrease.
Bias current I
BWith arc voltage V
ARemain on a steady state value by biasing and 229 controls of arc light power-supply controller of electric, as shown in Figure 7.Be imported into biasing and arc light power-supply controller of electric 229 according to the selected Control Parameter of the needs of ion source condition of work.Control signal O by controller 229 outputs
B(t) and O
A(t) be input to bias supply 52 and arc light power supply 50 respectively.
Should be understood that, although first kind of control algolithm and second kind of control algolithm respectively summary illustrate, ion source controller 100 can be designed to finish one of two kinds of algorithms or two kinds of algorithms can both be finished.In this case, ion source controller 100 can be carried out two kinds of algorithms, can design a device and select a certain special algorithm, and this is carried out by controller 100.Should be understood that different control algolithms can be used for controlling the ionogenic extraction electric current of non-directiy heated cathode.In a preferred embodiment, this control algolithm is carried out by software in controller 100.Yet also can carry out with a hardware control microprogramization or wiring.
When ion source was worked, filament 30 was at heater current I
FEffect under be heated to thermionic emission temperature, this temperature is greatly about 2200 ℃.Filament 30 electrons emitted are by the bias voltage V at filament 30 and negative electrode 20 two ends
BQuicken, the electron bombard negative electrode 20 of acceleration is its heating also.Negative electrode 20 is by electron bombard and be heated to the thermionic emission temperature.By negative electrode 20 electrons emitted by arc voltage V
AQuicken, the gas molecule ionization that handle is sent here from gas source 32 in arc light chamber 14 of the electronics of acceleration, and produce plasma discharge.Electronics in the arc light chamber rotates under the effect of magnetic field B.Repellel 22 has been piled up negative electrical charge under the effect of incident electron, considerable negative electrical charge reflection electronic back and forth in arc light chamber 14 is finally arranged, to produce other ionization collisions.Ion source shown in Figure 1 is compared with direct heated cathode formula ion source and has been prolonged the life-span, and this is because filament 30 is not installed in the plasma slab of arc light chamber and negative electrode 20 is bigger than traditional direct heated cathode.
The embodiment of a non-direct heated cathode 20 is illustrated in Fig. 2 A and Fig. 2 B.Fig. 2 A is an end view, and Fig. 2 B is the perspective view of negative electrode 20.Negative electrode 20 can be plate-like and connect with support bar 150.In one embodiment, support bar 150 is connected to the center of cathode disk 20, and the diameter of support bar is littler than the diameter of negative electrode 20, can reduce the conduction and the radiation of temperature like this.In another embodiment, available a plurality of support bar is connected on the negative electrode 20.For example, can select with first support bar to the greatest extent cun and second support bar inequality in shape, it is connected on the negative electrode 20, can prevent that like this mistake of negative electrode 20 from installing.A negative electrode that comprises negative electrode 20 and support bar 150 divides device to be supported in the arc light chamber 14 (Fig. 1) with spring clip 152.Spring clip 152 is fixed support bar 150 spatially, and spring clip self spatially is fixed on the arc light chamber by a supporting mechanism (not shown).As shown in Figure 1, support bar 150 provides a mechanical support for negative electrode 20, and provides and the electrically connecting of arc light power supply 50 and bias supply 52.Because support bar 150 has a relatively little diameter, so heat conduction and thermal radiation meeting reduce.
In one embodiment, negative electrode 20 and support bar 150 are formed by the tungsten manufacturing and can manufacture a body component.In this embodiment, the diameter of negative electrode 20 is 0.75 inch, and thickness is 0.2 inch.In one embodiment, the length of support bar 150 is between 0.5 to 3 inch.For example, in a preferred embodiment, the length of support bar 150 is about 1.75 inches, and diameter is the scope between 0.04 to 0.25 inch greatly.In a preferred embodiment, the diameter of support bar 150 is about 0.125 inch.Generally speaking, the support bar diameter is littler than the diameter of negative electrode 20.For example, the diameter of negative electrode 20 is at least more than 4 times of diameter of support bar 150.In a preferred embodiment, the diameter of negative electrode 20 is approximately more than 6 times of diameter of support bar 150.Should be understood that these sizes just provide by way of example, and protection scope of the present invention are not defined in this.In another embodiment, negative electrode 20 and support bar 150 are made into the branch body component, and their press fit together.
Generally speaking, support bar 150 is three-dimensional column structure, and at least one support bar 150 supports negative electrode 20, and conduct electrical energy to negative electrode 20.In one embodiment, the diameter of cylinder support bar 150 is constant on its length direction.In another embodiment, support bar 150 also can be three-dimensional column structure, but the diameter of support bar 150 is different and change to some extent along the position of its length direction.For example, the diameter of support bar 150 can strengthen the thermal insulation between support bar 150 and the negative electrode 20 like this in the terminal minimum along its length direction.Support bar 150 is installed on the surface of the chamber of arc light dorsad of negative electrode 20.In a preferred embodiment, support bar 150 is installed in the center near negative electrode 20.
An embodiment of filament 30 is shown in Fig. 3 A to 3D.In this embodiment, filament 30 is made by lead and is comprised a heating collar and tie 172,174.For filament 30 is connected with as shown in Figure 1 A-power supply 54, tie 172 and 174 has suitable bending.In the embodiment of Fig. 3 A to 3D, heating collar 170 is made into a circular arc bending, and the interior diameter of circular arc bending is more than or equal to the diameter of support bar 150.In the embodiment of Fig. 3 A to 3D, the interior diameter of heating collar 170 is 0.36 inch, and overall diameter is 0.54 inch.Filament 30 can be that 0.090 inch tungsten filament is made by diameter.Preferably, along on the length direction of heating collar 170 and near the vicinity of negative electrode 20 (Fig. 1), the sectional area of tungsten filament reduces.For example, can be reduced to than minor diameter, be generally 0.075 inch, can increase resistance like this in place and strengthen heating, and can strengthen heating tie 72 and 74 near negative electrode 20 along the diameter of arc-shaped bend place tungsten filament.Preferably, heating collar 170 spatially is approximately 0.020 inch from negative electrode 20.
An embodiment of cathode insulation device 24 is shown in Fig. 4 A to 4C.Just as shown in the figure, insulation device 24 is structures that are as general as ring-type that have for a central opening 200 that holds negative electrode 20.Insulation device 24 is made into to make negative electrode 20 and arc light chamber housing 10 (Fig. 1) electric insulations and heat-insulating structure.Preferably, the size of central opening 200 is more slightly bigger than negative electrode 20, can provide a spatial joint clearance to prevent the conduction of heat like this between insulation device 24 and negative electrode 20.Insulation device 24 also can have a flange 202, and it can be screen plasma in the arc light chamber 14 (Fig. 1) of the sidewall 204 of insulator spare 24.Flange 202 has a groove 206 in the one side that deviates from plasma, and this groove can increase the path between negative electrode 20 and the arc light chamber housing 10.The design of this insulation device can reduce insulation on the device the caused negative electrode 20 of sediment and the short circuit risk between the arc light cavity shell 10.In a preferred embodiment, cathode insulation device 24 is made by boron nitride.
Illustrated here and described and thought the preferred embodiments of the present invention at present; should be understood that; to one skilled in the art, under the condition of the protection range that does not break away from claim of the present invention and limited, can make variations and modifications to the present invention.More should be understood that, in protection scope of the present invention, can separate application and applied in any combination described technical characterictic.
Claims (18)
1. one kind is used for ionogenic negative electrode and divides device, and it comprises:
Non-direct heated cathode; With
Be used to support the support bar that be fixedly installed to non-direct heated cathode of negative electrode in ion source arc light chamber.
2. negative electrode as claimed in claim 1 divides device, it is characterized in that support bar is installed to the surface that deviates from the arc light chamber of negative electrode.
3. negative electrode as claimed in claim 2 divides device, it is characterized in that negative electrode is a plate-like.
4. negative electrode as claimed in claim 3 divides device, it is characterized in that support bar is installed near the center or center of negative electrode along the axle of negative electrode.
5. negative electrode as claimed in claim 4 divides device, it is characterized in that support bar be cylindrical and the diameter of support bar less than the diameter of negative electrode.
6. negative electrode as claimed in claim 5 divides device, it is characterized in that the diameter of negative electrode is at least more than 4 times of diameter of support bar.
7. negative electrode as claimed in claim 5 divides device, also comprises the spring clip of supporting support bar.
8. negative electrode as claimed in claim 1 divides device, it is characterized in that support bar is that mechanical support and conduct electrical power arrive negative electrode.
9. the ionogenic negative electrode of non-direct-heating type that has the arc light chamber housing that is used for a definite arc light chamber divides device, comprising:
Negative electrode divides device, and it comprises negative electrode and the support bar that is fixedly installed on the negative electrode; With
The filament of emitting electrons, filament are installed in the support bar that the outer and close negative electrode of arc light chamber divides device; With
Can make negative electrode and arc light chamber housing electric insulation and heat-insulating cathode insulation parts, its ring be contained in negative electrode divide device negative electrode around.
10. negative electrode as claimed in claim 9 divides device, comprises that also ring insulate near the filament of negative electrode and the plasma in filament and the arc light chamber around being contained in support bar.
11. negative electrode as claimed in claim 9 divides device, comprising also that ring is contained in around the support bar near the filament of negative electrode and filament and plasma in the arc light chamber insulate, and it is characterized in that filament made by conductive materials and comprise the arc-shaped bend of interior diameter more than or equal to the support bar diameter.
12. negative electrode as claimed in claim 9 divides device, comprise that also ring insulate near the filament of negative electrode and the plasma in filament and the arc light chamber around being contained in support bar, it is characterized in that filament made by conductive materials and comprise the arc-shaped bend of interior diameter more than or equal to the support bar diameter, and the sectional area of filament changes on the filament length direction, and the sectional area of filament is along the arc-shaped bend minimum.
13. negative electrode as claimed in claim 9 divides device, it is characterized in that said cathode insulation parts comprise the opening of diameter more than or equal to the negative electrode diameter.
14. negative electrode as claimed in claim 13 divides device, the gap that it is characterized in that having living space between cathode insulation parts and negative electrode is to prevent heat conduction.
15. negative electrode as claimed in claim 13 divides device, it is characterized in that said cathode insulation parts have the sidewall that is as general as tubulose and comprise flange, flange is used to the sidewall of cathode insulation parts to block the interior plasma of arc light chamber.
16. cathode insulation parts as claimed in claim 15, one side it is characterized in that deviating from the groove that has of plasma at flange, to increase the path between negative electrode and the arc light chamber housing.
17. a support and the non-method that directly adds the thermionic ion source negative electrode comprise the following steps:
With the they sup-port negative electrode that is fixedly installed on the negative electrode; With
Use the electronics bombarding cathode.
Divide device 18. be used for ionogenic negative electrode, comprising:
Negative electrode;
Be fixedly installed to the support bar of negative electrode; With
Be used to make electric insulation and heat-insulating cathode insulation parts between negative electrode and the arc light chamber housing; With
Non-direct heater block is used for non-direct heated cathode.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20493600P | 2000-05-17 | 2000-05-17 | |
| US20493800P | 2000-05-17 | 2000-05-17 | |
| US60/204,936 | 2000-05-17 | ||
| US60/204,938 | 2000-05-17 | ||
| US72628401A | 2001-04-04 | 2001-04-04 | |
| US09/726,284 | 2001-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1451169A true CN1451169A (en) | 2003-10-22 |
| CN1230859C CN1230859C (en) | 2005-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018090753A Expired - Fee Related CN1230859C (en) | 2000-05-17 | 2001-04-25 | Control system for indirectly heated cathode ion source |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100778164B1 (en) |
| CN (1) | CN1230859C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701573A (en) * | 2016-01-19 | 2018-10-23 | 艾克塞利斯科技公司 | improved ion source cathode shield |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101144222B1 (en) * | 2010-12-22 | 2012-05-10 | 한국원자력연구원 | Ion source apparatus and its operating method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5703372A (en) * | 1996-10-30 | 1997-12-30 | Eaton Corporation | Endcap for indirectly heated cathode of ion source |
-
2001
- 2001-04-25 CN CNB018090753A patent/CN1230859C/en not_active Expired - Fee Related
- 2001-04-25 KR KR1020027015466A patent/KR100778164B1/en active IP Right Grant
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108701573A (en) * | 2016-01-19 | 2018-10-23 | 艾克塞利斯科技公司 | improved ion source cathode shield |
| CN108701573B (en) * | 2016-01-19 | 2021-02-02 | 艾克塞利斯科技公司 | Improved ion source cathode shield |
| TWI719122B (en) * | 2016-01-19 | 2021-02-21 | 美商艾克塞利斯科技公司 | Improved ion source cathode shield and arc chamber and ion source comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030011335A (en) | 2003-02-07 |
| KR100778164B1 (en) | 2007-11-22 |
| CN1230859C (en) | 2005-12-07 |
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