CN1450661A - Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof - Google Patents
Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000005669 field effect Effects 0.000 title claims abstract description 8
- 239000003989 dielectric material Substances 0.000 title claims description 12
- 229910052726 zirconium Inorganic materials 0.000 title claims description 12
- -1 zirconium aluminate Chemical class 0.000 title claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 34
- 230000012010 growth Effects 0.000 claims abstract description 27
- 150000004645 aluminates Chemical class 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
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- 230000008021 deposition Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 229910007875 ZrAlO Inorganic materials 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004549 pulsed laser deposition Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
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- 239000001301 oxygen Substances 0.000 description 6
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
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Abstract
This invention relates to a method for preparation of NZr aluminate and its film of high dielectric coefficient grating electric medium material used in MOS field-effect transistor utilizing pulse layer deposition technology to grind and mix jargonia and aluminium oxide powders to form wafer after cold pressure then to sinter for 6 hours to get a Zr aluminate seramic target under 1250 deg.c to lead in nitrogen in a growth chamber enabiling the atomic percentage concentration of Ni to be 6% in the film, and its combined energy is 404. lev in high oxidation state further to get NiZr aluminate.
Description
One, technical field
The present invention relates to the microelectronic material field, particularly relate to and can be applicable to novel high-dielectric coefficient grid dielectric material and preparation method thereof in the Metal-oxide-semicondutor field effect transistor of future generation (MOSFET).
Two, background technology
In the silicon-based semiconductor integrated circuit, metal monooxide-semiconductor field (MOSFET) is the elementary cell that constitutes mnemon, microprocessor and logical circuit, and the size of its volume is directly connected to the integrated level of very lagre scale integrated circuit (VLSIC).By famous Moore's Law, to double every the integrated level of 18 months integrated circuits.Can be expected at 2005 thus, it is ripe that the photoetching technique of 0.1 μ m will be tending towards, and among the corresponding M OSFET as the SiO of gate dielectric film
2The thickness of layer will reduce to below the 2nm.Level to photoetching technique in 2012 will reach 0.05 μ m, the SiO of corresponding equivalence
2The thickness of gate dielectric film will reduce to below the 1nm.But Quantum mechanical calculation shows works as SiO
2When the thickness of gate dielectric film reduced to 2nm, grid knot that tunnel effect causes and the leakage current between the silicon chip had promptly arrived the degree that can not allow.In order to address this problem, must use material to replace existing SiO with higher dielectric coefficient and low-leakage current
2, this has become the bottleneck that restricts MOSFET integrated level raising in following 10 years, and has caused the very big concern of various countries semiconductor educational circles.People are accustomed to being equivalent to how thick SiO
2The equivalent oxide thickness (EOT) of layer is described the thickness of high-dielectric coefficient grid dielectric layer (high-kgate dielectric), and its expression formula is:
EOT=t
SiO2+ t
High-k oxide* ε
SiO2/ ε
High-k oxideT wherein
SiO2The SiO that causes for interfacial reaction
2The thickness of layer, t
High-k oxideBe the actual (real) thickness of high-dielectric coefficient dielectric layer, ε
SiO2And ε
High-k oxideBe respectively SiO
2With the dielectric dielectric coefficient of high-dielectric coefficient, wherein ε
SiO2=3.9.Should make the actual (real) thickness of grid dielectric layer bigger in order to reduce leakage current, the approach that at this moment lowers EOT has two: one, selects for use the bigger material of dielectric coefficient as the gate dielectric membrane material, and the 2nd, the SiO that try one's best minimizing and even elimination form at the interface
2Layer.The basic principle that present stage is sought high-dielectric coefficient grid dielectric material is:
(1) electrical properties: the broad stopband, cation valence is few, low defective and interface state density.
(2) dielectric property: high-dielectric coefficient (～20) is also more slow with temperature and frequency change, low-leakage current.
(3) thermal stability: can bear 800 ℃ at least, 2 minutes short annealing heat treatment.
(4) chemical property and Si substrate compatibility do not form or only form the SiO of one or two atomic layer at the interface
2, compatible mutually with grid material, interfacial reaction does not take place.Its preparation technology will with existing compensatory metal-oxide semiconductor (MOS) (CMOS) process compatible.
(5) thus for the defective that reduces gate dielectric film reduces leakage current, people it is generally acknowledged that film is preferably epitaxy single-crystal film or amorphous film.The former preparation is more difficult, thereby amorphous film becomes object of greatest concern.
(6) add an amount of nitrogen in metal oxide, can increase its dielectric coefficient and improve thermodynamic (al) stability, the preparation nitrogen oxide also can suppress surface of silicon substrate SiO to a certain extent in nitrogen atmosphere simultaneously
2The formation of boundary layer, thereby metal oxynitride is considered to have the grid dielectric material of bigger application potential.
Many oxides such as Ta
2O
5, TiO
2, ZrO
2, Al
2O
3Deng just being studied widely as the candidate material.But they all can not satisfy alternative SiO fully
2Whole requirements.ZrO
2Higher dielectric constant is arranged, be about 500 ℃ but crystallization temperature is low, polycrystal film can cause high crystal boundary leakage current; While ZrO
2Big oxygen diffusion rate is arranged, in the preparation process of film, oxygen can and pasc reaction can cause the formation of low-k boundary layer and reduce the electric capacity of entire device.Opposite with it, Al
2O
3Very high crystallization temperature and low-down oxygen diffusion rate are arranged, but dielectric constant less be 8.9.We utilize these two kinds of oxides advantage separately, introduce the nitrogen preparation and have the very NiZr aluminate (ZrAlO of high chemical stability and medium dielectric constant
xN
yHereinafter to be referred as ZAON) material.
Three, summary of the invention
1, goal of the invention: the present invention seeks to provide a kind of NiZr aluminate film that is applied to Metal-oxide-semicondutor (MOS) field effect transistor and preparation method thereof
2, technical scheme
A kind of high-dielectric coefficient grid dielectric material NiZr aluminate (ZrAlO that is applied to Metal-oxide-semicondutor (MOS) field effect transistor
XN
Y) film, it is characterized in that (99.999%) peels off the ZrAlO that ablation is made by sintering with pulse laser in the high pure nitrogen atmosphere
3Ceramic target produces laser plasma and deposits on silicon substrate and make amorphous ZAON film; Nitrogen atoms of elements number percent concentration is 6% in film, and the binding energy of nitrogen-atoms is 404.1eV, and high oxidation state is ZrAlO thereby make molecular formula
XN
YNiZr aluminate be deposited on then on the silicon substrate film, the dielectric coefficient of this film is 18.2, equivalent oxide thickness is less than 1.1nm, under 1 volt of voltage, its leakage current is less than 30mA/cm
2
A kind of high-dielectric coefficient grid dielectric material NiZr aluminate (ZrAlO that is applied to Metal-oxide-semicondutor (MOS) field effect transistor
XN
Y) preparation method of film, it is characterized in that adopting pulsed laser deposition (PLD) technology, use ZrAlO
3Ceramic target, preparation NiZr aluminate film in blanket of nitrogen, concrete steps are as follows:
(1) the zirconium aluminate ceramic target is placed on the target platform 1, silicon substrate 6 is placed on the substrate table 5, resistance furnace 7 is placed on the substrate table below, target platform 1, substrate table 5, substrate 6, resistance furnace 7 all are placed in the growth room 8, the hole 9 that a logical nitrogen is arranged in the left side, growth room, the right upper portion opening is placed lens 3, and lower openings connects vacuum pump 4 (mechanical pump and molecular pump);
(2) with mechanical pump growth room 8 is vacuumized and reach below the 10Pa, vacuumize with molecular pump again and reach 1 * 10
-2Pa;
(3) in growth room 8, charge into high pure nitrogen from air vent hole 9, make the blanket of nitrogen that keeps 18-25Pa in the growth room;
(4) with resistance furnace 7 heated substrate platforms 5, make silicon substrate reach 300 ℃-800 ℃ of design temperatures;
(5) starting impulse laser, the laser beam scioptics are focused on the zirconium aluminate target, in film-forming process, target platform 1 and substrate table 5 are with constant speed rotation, thereby make the laser beam plasma be deposited on the silicon substrate equably, make the film that thickness is 4nm-10nm, and cool to room temperature in position;
(6) with film with the short annealing heat-treatment furnace in blanket of nitrogen under 800 ℃-950 ℃, short annealing 0.5-3 minute.
Zirconium aluminate ceramic target described in the above-mentioned steps (1) is by pure ZrO
2And Al
2O
3Powder, after mixing with ball milling in 1: 1 ratio, under 10-15MPa pressure, be cold-pressed into disk, made at 1200 ℃ of-1300 ℃ of following sintering 5-8 hours then, pressure 12MPa preferably colds pressing, preferred sintering temperature is 1250 ℃, sintering time is 6 hours, backing material is that to select resistivity for use be the n type silicon chip (100) of 2-3 Ω .cm, through acetone or alcohol ultrasonic cleaning 3-5 minute, twice of continuous wash, used the deionized water ultrasonic cleaning then 3-5 minute, continuous wash twice with the deionized water rinsing number that flows time, is removed the SiO on surface more at last with hydrofluoric acid
2
In the above-mentioned steps (3), charge into the nitrogen in the growth room, preferred blanket of nitrogen remains on 20Pa in the growth room in thin film growth process;
Resistance furnace described in the above-mentioned steps (4) can any temperature keep constant between 20 ℃-900 ℃, the preferred design temperature of heating silicon substrate is 500 ℃;
Pulse laser described in the above-mentioned steps (5) is KrF (KrF) excimer laser, and its wavelength is 248nm, and pulse duration is 30ns, single pulse energy 50-600mJ, and energy density is 2.0J/cm
2The aftertreatment technology of film is that employing short annealing heat-treatment furnace preferred annealing temperature in nitrogen is 900 ℃ in the above-mentioned steps (6), and annealing time is 1 minute.
The microstructure analysis of the NiZr aluminate film of above gained can use following instrument:
High-resolution transmission electron microscope(TEM), model are Hitachi HF-2000;
X-ray photoelectron power spectrum, model are ESCALB MK-II;
Dielectric and electricity performance measurement use following instrument: HP 4294A impedance/phase analysis instrument and HP 4140B skin peace/direct voltage source.
Below in conjunction with The performance test results, further specify beneficial effect of the present invention to the ZAO film:
We obtain when 1 megahertz by measuring metal-insulator-metal type (MIM) capacitor arrangement of Pt/ZAON/Pt, and the dielectric constant of ZAON is 18.2, and it is worth all greater than SiO
2Dielectric constant 3.9 and Al
2O
3Dielectric constant 8.9, be medium value.It satisfies the requirement of high-dielectric coefficient grid dielectric material of future generation.
Fig. 3 shows, introduces high pure nitrogen in the growth room, and underlayer temperature is brought up to 500 ℃ to strengthen the effect that nitrogen enters film.Fig. 3 is the x-ray photoelectron spectroscopy of the ZAON film growth of 4 nanometer thickness at silicon substrate.Fig. 3 (a) is wide scintigram, (b) is nitrogen 1s photoelectron spectroscopy.The atom percentage concentration of nitrogen element in film is about 6%.The binding energy of nitrogen-atoms is 404.1eV, is high oxidation state.As seen the oxygen atom Cheng Jianwei N-O that nitrogen-atoms and electronegativity are bigger in the ZAON film.
Fig. 4 shows, Fig. 4 (a) expression be ZAON/Si 1 minute HRTEM of rapid thermal annealing figure under 800 ℃ of conditions in nitrogen atmosphere.Can see almost not having boundary layer, and the ZAON film of amorphous is evenly smooth at the interface of ZAON/Si.Fig. 4 (b) shows is identical ZAON/Si sample 1 minute HRTEM of rapid thermal annealing figure under 950 ℃ of conditions in blanket of nitrogen.The ZAON film still keeps amorphous state, and boundary layer does not increase.
Fig. 5 shows that sample is through 800 ℃ of rapid thermal annealings of 1 minute.The shape of C-V curve shows that we have lower interface state density by prepared sample; Slow and the fixed charge density of insignificant voltage scanning.Equivalent oxide thickness EOT value is 1.03 nanometers, and flat band voltage is 0.50V.Because ZrO
2Have high oxygen diffusion rate, easily form the boundary layer of low-k, thereby be difficult to obtain less EOT value.Al
2O
3Easily form high fixed charge density between film and the Si substrate, can cause big flat band voltage.So the prepared ZAON film of the present invention has the ZrO of being better than
2And Al
2O
3Electric property.
3, beneficial effect:
From above-mentioned The performance test results to the ZAON film, can find out significantly that the present invention compared with prior art, have following advantage: NiZr aluminate (ZAON) film of (1) preparation is amorphous state and has high thermodynamic stability, its crystallization temperature can bear the required annealing in process of compensatory metal-oxide semiconductor (MOS) (CMOS) technology and non-crystallization more than 950 ℃; (2) dielectric coefficient is 18.2, and it is worth greater than SiO
2Dielectric coefficient 3.9 and Al
2O
3Dielectric coefficient 8.9, satisfied the requirement of high-dielectric coefficient grid dielectric material, in ZAON film preparation process,, form SiO hardly at the ZAON/n-Si interface owing to introduce nitrogen
2Boundary layer; (3) utilize the Pt/ZrAlO of this film preparation
3Metal-dielectric film of N/n-Si-semiconductor (MIS) structure, the EOT that shows ZAON after tested is less than 1.1nm, and under 1 volt of voltage, its leakage current is less than 30mA/cm
2Corresponding to the physical thickness 4 measured equivalent oxide thicknesses of nanometer ZAON film (EOT) is 1.03nm, and leakage current is 28.7mA/cm
2Above-mentioned every performance index have reached the higher level of the high-dielectric coefficient grid dielectric material research that colleague in the world obtains, the application request of MOSFET in the less demanding semiconductor of power consumption can be satisfied simultaneously, the requirement of the follow-up high-temperature heat treatment of current semi-conductor industry can be satisfied substantially. the structure of utilizing the PLD method to be prepared into the ZAON/n-Si of the instructions for use of satisfying MOSFET is not appeared in the newspapers as yet in the world.
Four, description of drawings
Fig. 1: the present invention is used to prepare the structural representation of the PLD film growth system of ZAON dielectric film.The 1-ZAO ceramic target 2-laser beam 3-lens 4-vacuum pump 5-substrate table 6-backing material 7-resistance furnace 8-9-of growth room leads to oxygen outlet
Fig. 2: the dielectric constant of ZAON film and dielectric loss are with frequency variation curve, and wherein the x axle is represented frequency (unit hertz), the normal (ε of unit of y axle (left side) expression dielectric
r) and y axle (right side) dielectric loss (the tan δ of unit).
Fig. 3: Fig. 3 is the x-ray photoelectron spectroscopy of the ZAON film growth of 4 nanometer thickness at silicon substrate.Fig. 3 (a) is wide scintigram, (b) is nitrogen 1s photoelectron spectroscopy, and wherein the x axle is represented binding energy (unit electron-volt), and the y axle is represented relative intensity (arbitrarily).
Fig. 4: the sectional drawing of the high resolution transmission electron microscopy (HRTEM) of 4 nanometer ZAON films.Fig. 4 (a) expression be ZAON/Si 1 minute HRTEM of rapid thermal annealing figure under 800 ℃ of conditions in blanket of nitrogen.Fig. 4 (b) shows is identical ZAON/Si sample 1 minute HRTEM of rapid thermal annealing figure under 950 ℃ of conditions in blanket of nitrogen.
Fig. 5: capacitance voltage C-V curve that 4 nanometer ZAON film growths record on the n-Si substrate and corresponding leakage current voltage J-V curve, wherein the x axle is represented grid voltage (unit volt), the y axle is represented electric capacity (unit pico farad).
Five, embodiment
Adopt pulsed laser deposition (PLD) technology, use ZrAlO
3Ceramic target prepares the method for NiZr aluminate film in blanket of nitrogen, its preparation process is:
1, the zirconium aluminate ceramic target is fixed on the target platform silicon substrate material is fixed on the substrate table, resistance furnace is placed in the substrate table below, target platform, substrate table, resistance furnace all are placed in the growth room, the left side, growth room has the hole of a logical oxygen, the right upper portion opening part is placed with the lens of quartz glass, and lower openings connects vacuum pump (mechanical pump and molecular pump);
2, with mechanical pump growth room 8 is vacuumized and reach 8Pa, vacuumize with molecular pump again and reach 1 * 10
-2Below the Pa;
3, in the growth room, charge into nitrogen, make in the thin film growth process, keep the blanket of nitrogen of 20Pa in the growth room;
4, with resistance furnace heated substrate platform, make the silicon substrate temperature be set in 500 ℃; Thin film deposition is made structure and electrical characterization on the n type silicon chip that hydrofluoric acid corroded, as: XRD and capacitance-voltage C-V measure; Or be deposited on Pt/TiO
2/ SiO
2/ Si substrate is used as the measurement of dielectric constant and dielectric loss; The concentration that nitrogen enters film can reach atom number percent concentration about 6%.
5, use the KrF excimer laser, wavelength is 248nm, pulse duration 30ns, and single pulse energy 50-600mJ, energy density is 2.0J/cm
2, start laser, make laser beam pass through the quartz glass lens focus on the zirconium aluminate target, in film-forming process, target platform and substrate rotate with constant speed, make the laser beam plasma be deposited on the silicon substrate equably, make the ultrathin membrane that thickness is 4nm, cool to room temperature in position;
6, with the NiZr aluminate film with short annealing heat-treatment furnace in blanket of nitrogen 900 ℃, annealed 1 minute.Can almost there be SiO
2The ZAON/n-Si structure of boundary layer.
Above-mentioned described NiZr aluminate ceramic target is by ZrO
2And Al
2O
3Powder in 1: 1 ratio, after fully mixing with ball milling, is cold-pressed into disk with 12MPa pressure, makes in 6 hours at 1250 ℃ of following sintering then; Described backing material is a n type silicon chip (100) of selecting 3 Ω .cm for use, cleans 4 minutes twice of continuous wash with acetone in ultrasonic device, cleaned 5 minutes in ultrasonic device with deionized water then, clean twice, with flow deionized water flushing 2 times, remove the SiO on surface at last with hydrofluoric acid again
2
Claims (9)
1, a kind of high-dielectric coefficient grid dielectric material NiZr aluminate (ZrAlO that is applied to Metal-oxide-semicondutor (MOS) field effect transistor
XN
Y) film, it is characterized in that (99.999%) peels off the zirconium aluminate (ZrAlO that sintering is made with pulse laser in the high pure nitrogen atmosphere
3) ceramic target, deposition on silicon substrate and make amorphous NiZr aluminate (ZrAlO
XN
Y) film, nitrogen atoms of elements number percent concentration is 6% in film, and the binding energy of nitrogen-atoms is 404.1eV, and high oxidation state is ZrAlO thereby make molecular formula
XN
YNiZr aluminate be deposited on then on the silicon substrate film, the dielectric coefficient of this film is 18.2, equivalent oxide thickness is less than 1.1nm, under 1 volt of voltage, its leakage current is less than 30mA/cm
2
2, a kind of high-dielectric coefficient grid dielectric material NiZr aluminate (ZrAlO that is applied to Metal-oxide-semicondutor (MOS) field effect transistor
XN
Y) preparation method of film, it is characterized in that adopting pulsed laser deposition (PLD) technology, use ZrAlO
3Ceramic target, preparation NiZr aluminate film in blanket of nitrogen, concrete steps are as follows:
(1) the zirconium aluminate ceramic target is placed on the target platform 1, silicon substrate 6 is placed on the substrate table 5, resistance furnace 7 is placed on the substrate table below, target platform 1, substrate table 5, substrate 6, resistance furnace 7 all are placed in the growth room 8, the hole 9 of a logical nitrogen on the left of the growth room, the right upper portion opening is placed lens 3, and lower openings connects vacuum pump 4;
(2) with mechanical pump growth room 8 is vacuumized and reach below the 10Pa, vacuumize with molecular pump again and reach 1 * 10
-2Pa;
(3) in growth room 8, charge into high pure nitrogen from logical nitrogen pore 9, make the blanket of nitrogen that keeps 18-25Pa in the growth room;
(4) with resistance furnace 7 heated substrate platforms 5, make silicon substrate reach 300 ℃-800 ℃ of design temperatures;
(5) starting impulse laser, the laser beam scioptics are focused on the zirconium aluminate target, in film-forming process, target platform 1 and substrate table 5 are with constant speed rotation, thereby make the laser beam plasma be deposited on the silicon substrate equably, make the film that thickness is 4nm-10nm, and cool to room temperature in position;
(6) with film with the short annealing heat-treatment furnace in blanket of nitrogen under 800 ℃-950 ℃, short annealing 0.5-3 minute.
3, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the described zirconium aluminate ceramic target of step (1), is to use pure ZrO
2And Al
2O
3Powder is pressed 1: 1 mol ratio after ball milling is mixed, is cold-pressed into disk under 10-15MPa pressure, makes at 1200-1300 ℃ of following sintering 5-8 hour then.
4, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the pressure of preferably colding pressing of zirconium aluminate ceramic target is 12MPa, and sintering temperature is 1250 ℃, and sintering time is 6 hours.
5, the preparation method of NiZr aluminate film according to claim 2, it is characterized in that the backing material described in the step (1) is the n-Si (100) that selects resistance 2-3 Ω .cm for use, through acetone or spilt smart ultrasonic cleaning 3-5 minute, twice of continuous wash, used the deionized water ultrasonic cleaning then 3-5 minute, continuous wash twice again with the deionized water rinsing that flows, is removed the SiO on surface at last with hydrofluoric acid
2
6, the preparation method of the NiZr aluminate film of asking according to claim 2 is characterized in that the nitrogen that charges in the step (3) being preferably the 20Pa blanket of nitrogen in growth room 8.
7, the preparation method of NiZr aluminate film according to claim 2 is characterized in that the resistance furnace described in the step (4) can any temperature keep constant heating silicon substrate between 20 ℃-900 ℃, preferably be heated to be 500 ℃.
8, the preparation method of NiZr aluminate film according to claim 2, it is characterized in that being that the pulse laser described in the step (5) is that KrF (KrF) excimer laser produces wavelength 248nm, pulse duration 30ns, single pulse energy 50-600mJ, energy density 2.0J/cm
2
9, the preparation method of zirconium aluminate film according to claim 2 is characterized in that short annealing processing stove preferred annealing temperature in blanket of nitrogen of the aftertreatment technology employing of film in the step (6) is 900 ℃, and annealing time is 1 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN03113462.9A CN1208842C (en) | 2003-05-15 | 2003-05-15 | Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof |
Applications Claiming Priority (1)
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| CN102133302A (en) * | 2011-03-07 | 2011-07-27 | 河南中医学院 | Verbena extract extracted from verbena and used for curing prostatitis |
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