CN1450409A - Method for eliminating wire end shortening effection in photolithography and used mask set - Google Patents
Method for eliminating wire end shortening effection in photolithography and used mask set Download PDFInfo
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- CN1450409A CN1450409A CN 02106272 CN02106272A CN1450409A CN 1450409 A CN1450409 A CN 1450409A CN 02106272 CN02106272 CN 02106272 CN 02106272 A CN02106272 A CN 02106272A CN 1450409 A CN1450409 A CN 1450409A
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Abstract
The invention provides a method to eliminate the shortening effect on the line end during the process of photolithograph. The steps: (1) expose the photosensitive coating under the first covering curtain, and extend the end of each line or hatch in the design which will be formed by the photosensitive coating to get a design formed by the first extending part; (2) expose the photosensitive coating under the second covering curtain, thereinto the design of the second covering curtain contains at least a hatch, and when the first and second covering curtains overlaps, any first extending part and second extending part formed by the corresponding first extending part on the first covering curtain exactly overlap with a hatch in the design of the second convering curtain, meanwhile.
Description
Technical field
The present invention is relevant with the exposure technique in a kind of micro-photographing process, particularly a kind of micro-photographing process center line end the shorten method and employed cover curtain group thereof of effect eliminated.
Background technology
Little shadow (Photolithography) is a considerable step in the manufacture of semiconductor.The principle of little shadow mainly is: coating one photosensitive material on semiconductor crystal wafer, see through cover curtain (mask) by light, with the design transfer on will cover act to semiconductor crystal wafer.Usually desire to finish the making of the integrated circuit on the semiconductor, need to use many cover curtains to carry out repeatedly little shadow step, so the complexity of processing procedure also can be decided by the number of employed cover curtain or little shadow step.
In little shadow, most important thing is exactly the pattern that how to define on the cover curtain, so that the design transfer on the cover curtain to semiconductor crystal wafer the time, can present the pattern of being wanted on the semiconductor crystal wafer.Relevant (the K=FS * NA/W) of the numerical value hole (numerical aperture) of the resolution of employed exposure machine (FS) and optical source wavelength (W), photoresist and process conditions dependent constant (K), exposure machine lens systems value (NA) in little shadow.Because the progress of manufacture of semiconductor, element integration (integration) is more and more higher, live width is towards 0.1 micron even littler size development.
Yet when photolithography was used in the design transfer of 0.1 micron and littler live width, the K value needed quite low inevitably.For example optical source wavelength W be 193 how rice (nm), NA value be 0.63 o'clock, desire to reach the required K=FS * NA/W=0.33 of design transfer of 0.1 micron live width.Therefore, under so little K value, if desire to keep the live width yardstick in this yardstick of wanting, then because the influence of optical nearing (Proximity) effect that cover curtain and photographic layer hypotelorism on the wafer are caused, design transfer is to the semiconductor die bowlder, the length of line will shorten, and the K value is more little, the contraction in length of line severe more.
Usually solving the method that above-mentioned line length shortens effect is:the end that will cover the line on the curtain pattern prolongs or widens; Because the line length that design transfer was caused shortens effect; The compensation method that shortens of the traditional line end of the feasible image of transferring on the wafer approaches the pattern wanted as much as possible with compensation. can be consulted beautiful figure patent " Lithographic patterning method and mask set therefor withlight field trim mask " (Patent Case number for US5807649 number), " Lithographicmethod using double exposure techniques, mask position shifting andlight phase shifting with light field trim mask " (patent No. is US5308741 number) or " Method for reduced pitch lithographic " (Patent Case number be US5686223 number).
To suffer from following point yet above-mentioned solution line length shortens the technology of effect: (1) when the space between adjacent two-lines in the pattern of desire transfer too little, even cause will be wherein the end of a line extend to quite end near another line, or even contact with the end of another line, all can't offset the long effect that shortens that goes offline, therefore the image of transferring on the semiconductor crystal wafer is still different with the pattern of being wanted.(2) because design transfer is very sensitive for the size of prolongation, and desire to set a correct prolongation size be suitable difficulty, therefore be easy to cause line length undercompensation or line length overcompensate.(3) in order to offset the effect that line length shortens, in layout, must prolong or widen the end of line, thereby strengthen the size of structure cell.
Therefore, how effectively to solve line length and shorten effect, avoid producing above-mentioned disappearance simultaneously, become the problem that industry is needed solution badly then.
Summary of the invention
The object of the present invention is to provide a kind of micro-photographing process center line end the shorten method and employed cover curtain group thereof of effect eliminated, to solve line length undercompensation that conventional art was met with or excessive problem.
Another object of the present invention is to provide a kind of micro-photographing process center line end the shorten method and employed cover curtain group thereof of effect eliminated, to solve the excessive problem of unit cell dimension that conventional art was met with.
The invention provides a kind of shorten method of effect of micro-photographing process center line end of eliminating, to eliminate photographic layer when forming pattern, the line end effect that shortens because of when exposure photographic layer of being caused of optical effect, the method comprises the following steps: that at least (1) expose this photographic layer in one first cover curtain down, wherein at least one line on the pattern that this photographic layer institute desire is formed or the end of opening extend the formed pattern of one first prolongation outward, are the pattern of the first cover curtain.(2) expose this photographic layer down in one second cover curtain, wherein the pattern of the second cover curtain comprises at least one opening, and when the second cover curtain and the first cover curtain were overlapping, one second prolongation that any first prolongation on the first cover curtain and first prolongation extend was outward just covered by an opening on the pattern of the second cover curtain.
Wherein above-mentioned optical effect is optical nearing (proximity) effect.And on the pattern of the first cover curtain appoint between two-lines distance if the end that forms line on the pattern or opening less than the desire on this photographic layer because 10 times of sizes of the amount that exposure is shortened, then two openings systems of second prolongation that extends outward in order to two first prolongations covering this two-lines and first prolongation in the second cover curtain link together.
Again, distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and the first cover curtain is if cover root-mean-square value (the root mean square of summation of the positioning error, safe level (safetymargin) etc. of the relative cover curtain position (Placement) of interlude and calibration error, wafer board (stage) less than the first cover curtain and second, rms) two times of sizes, then this edge of opening therewith the distance between the edge of bar line need greater than 0, in case opening is met this line here.
In addition, the preferred length of above-mentioned first prolongation and second prolongation for the end that forms line on the pattern or opening more than or equal to the desire on this photographic layer because the amount that optics proximity effcet (proximity) is shortened during exposure.And all openings on the pattern of the above-mentioned second cover curtain just only cover all first prolongations and second prolongation on the first cover curtain.
The invention provides a kind of employed cover curtain of pattern group that on a photographic layer, forms, when this cover curtain group system forms pattern in order to be reduced on this photographic layer, because of the line end effect that shortens of when exposure this photographic layer of being caused of optical effect, this cover curtain group comprises one first cover curtain and one second cover curtain at least.Wherein the pattern on the first cover curtain is that each the bar line on the pattern that forms of this photographic layer institute desire or the end of opening extend the formed pattern of one first prolongation outward.And the pattern of the second cover curtain comprises at least one opening, and when the second cover curtain and the first cover curtain were overlapping, one second prolongation that any first prolongation on the first cover curtain and first prolongation extend was outward just covered by an opening on the pattern of the second cover curtain.
Wherein above-mentioned optical effect is optical nearing (Proximity) effect.And on the pattern of the first cover curtain appoint between two-lines distance if the end that forms line on the pattern or opening less than the desire on this photographic layer because 10 times of (preferred values is 3 times) sizes of the amount that exposure is shortened, then two openings systems of second prolongation that extends outward in order to two first prolongations covering this two-lines and first prolongation in the second cover curtain link together.
If distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the wherein above-mentioned second cover curtain and the first cover curtain is less than the first cover curtain and the second relative cover curtain position (placement) and the calibration error of covering interlude, the positioning error of wafer board (stage), root-mean-square value (the root mean square of the summation of safe level (safetymargin) etc., rms) two times of sizes, then this edge of opening therewith the distance between the edge of bar line need greater than 0 that (preferred values then be greater than the first cover curtain and the second relative cover curtain position and the calibration error of covering interlude, the positioning error of wafer board, the root-mean-square value of the summation of safe level etc.), in case opening is met this line here.
The length of wherein above-mentioned first prolongation forms the end of line on the pattern or opening because the amount that optics proximity effcet (proximity) is shortened during exposure more than or equal to the desire on this photographic layer.And the length of second prolongation forms the end of line on the pattern or opening because the amount that optics proximity effcet (Proximity) is shortened during exposure more than or equal to the desire on this photographic layer.Again, all openings on the pattern of the above-mentioned second cover curtain just only cover all first prolongations and second prolongation on the first cover curtain.In addition, the material of above-mentioned photographic layer is (positive) photosensitive material just.
Description of drawings
Figure 1A～Fig. 1 C is first preferred embodiment according to the present invention, the line end of eliminating conllinear pattern (colinear pattern) in the micro-photographing process synoptic diagram of effect that shortens;
Fig. 1 D is the design diagram of the employed cover curtain of first preferred embodiment according to the present invention;
Fig. 2 A～Fig. 2 C is second preferred embodiment according to the present invention, the line end of eliminating micro-photographing process center line end offset (offset line ends) the pattern synoptic diagram of effect that shortens;
Fig. 2 D is the design diagram of the employed cover curtain of second preferred embodiment according to the present invention;
Fig. 3 A～Fig. 3 C is the 3rd preferred embodiment according to the present invention, the line end of eliminating " T " pattern (" T " Pattern) in the micro-photographing process synoptic diagram of effect that shortens;
Fig. 3 D is the design diagram of the employed cover curtain of the 3rd preferred embodiment according to the present invention;
Fig. 4 A～Fig. 4 C is the 4th preferred embodiment according to the present invention, the line end of eliminating " L " pattern (" L " pattern) in the micro-photographing process synoptic diagram of effect that shortens;
Fig. 4 D is the design diagram of the employed cover curtain of the 4th preferred embodiment according to the present invention;
Fig. 5 A～Fig. 5 C is the 5th preferred embodiment according to the present invention, the line end of eliminating " H " pattern (" H " pattern) in the micro-photographing process synoptic diagram of effect that shortens;
Fig. 5 D is the design diagram of the employed cover curtain of the 5th preferred embodiment according to the present invention;
Fig. 6 A～Fig. 6 C is the 6th preferred embodiment according to the present invention, the line end of eliminating " L " patterns of openings (" L " opening pattern) in the micro-photographing process synoptic diagram of effect that shortens;
Fig. 6 D is the design diagram of the employed cover curtain of the 6th preferred embodiment according to the present invention.
Embodiment
In little shadow, most important thing is exactly the pattern that how to define on the cover curtain, so that the design transfer on the cover curtain to semiconductor crystal wafer the time, can present the pattern of being wanted on the semiconductor crystal wafer.If the system of the photosensitive material on the wafer is (positive) photosensitive material just, when light sees through cover curtain based on glass material, and after this positive photosensitive material exposed, if with this positive developing photosensitive material can obtain with above-mentioned cover curtain on the identical pattern of pattern.Certainly, if photosensitive material is negative (negative) photosensitive material, then this negative photosensitive material is after overexposure, developing, and the pattern on resulting pattern and the cover curtain just is complementary.
If yet the live width small-sized (for example 0.1 micron or following) of the pattern that institute's desire shifts in little shadow, because the influence of optical nearing (Proximity) effect, design transfer is to the semiconductor die bowlder, and the length of line will shorten.Therefore for head it off, the present invention (if the photosensitive material on the wafer is positive photosensitive material, wants the pattern that presents identical on the original cover curtain that tradition is used for micro-photographing process on the pattern system on the then original cover curtain and the semiconductor crystal wafer; If the photosensitive material on the wafer is negative photosensitive material, the pattern of wanting to present on pattern system on the then original cover curtain and the semiconductor crystal wafer just is complementary) replace it with two cover curtains.If the photosensitive material on the wafer is positive photosensitive material, then one of them covers the seemingly original cover curtain of curtain-like, and its place different with original cover curtain only is the prolongation of line end or even is connected on other line end.And another cover curtain has many openings on the line stub area of original cover curtain, accurately to excise this line end in the zone of wanting.To be example below, the shorten ultimate principle of effect of elimination micro-photographing process center line end proposed by the invention will be described in detail in detail with positive photosensitive material.
Modern for first embodiment, the shorten ultimate principle following (seeing also Figure 1A to Fig. 1 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: shown in Fig. 1 C, if after cover curtain design transfer, the final image of wanting on the semiconductor crystal wafer to present 30 is six lines of conllinear pattern (colinearpattern) (that is the terminal system of the line of two-lines directly faces), if then the cover curtain is accurately made the final image 30 of imaging just like that, the line end effect that shortens will take place in the image that is printed off on the wafer in all 12 line ends of these six lines so, the amount that shortens of its center line end is incomplete same, and it is relevant with adjacent ambient.
So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 10 and 1 second cover curtain (referred to herein as the terminal compensation cover of r act ") 20 to solve the shorten problem of effect of this line end.Wherein the first cover curtain 10 makes: the inner wire end links together, and the outer lines end lengthways extends out.As for the second cover curtain, 20 openings that have in order to the modified line end, it can excise the excessive portion of 12 line ends of these six lines.When light sees through this first cover curtain, 10, second cover curtain 20, when the positive photosensitive material layer on the wafer is exposed, positive photosensitive material layer on this wafer will produce a potential image (latent image), if this potential image is through developing, and will obtain wanting on the wafer the final image 30 that presents.
In fact, above-mentioned final image is diffraction (diffract) image of cover curtain.Because positive and negative image gradient (gradient) is in the eclipsing effects of square crossing place of line and opening, the line end has wedge shape (wedge) shape of angle between between 90～180 degree, and its log slope size with the cutting edge of opening of the line edge of the first cover curtain 10 and second cover acts 20 is relevant.In addition, the first cover curtain 10 is usually designed to original cover curtain (pattern on the original cover curtain is identical with final image 30) very similar, and the second cover curtain 20 then is the terminal cutting cover of a line curtain.Certainly, in micro-photographing process, the order of the first cover curtain, the 10 and second cover curtain 20 can be exchanged.
Fig. 1 D then demonstrates among Figure 1A～Figure 1B the detailed design of the first cover curtain, 10 and the second cover curtain 20, wherein represent the pattern of the first cover curtain 10 with reference to the hatched example areas in the cover curtain 40, and dashed region is represented the second cutting opening that covers in acts 20 the pattern.In the order cover curtain office, article one, the reduction of the end of line is D (the terminal reduction D of this line is relevant with adjacent ambient usually) to the maximum, therefore in order to offset the line end effect that shortens, the interior extremity of each the bar line in the first cover curtain 10 need lengthways extend out up to the interior extremity with another line and link together, and the external end of each bar line need stretch out away with the prolongation amount of H, wherein the preferred values of H be more than or equal to D (in Fig. 1 D, H=D.)。
And in the second cover curtain 20 in order to the cutting opening of modified line end, because the influence of optical effect, also can produce maximum reduction is the opening reduction effect of D, so the cutting opening in the second cover curtain 20 is except needs cover the prolongation of the line in the first cover curtain 10, still need and cover the part that prolongation outwards extends out again, the prolongation amount of the part that outwards extends out again as for this prolongation is respectively T and L, wherein the preferred values of T, L be more than or equal to D (in Fig. 1 D, T=1.2D, L=D.)。In addition, the interval E of the adjacent two-lines in the first cover curtain 10 is if (preferred values is E＜3D), and then the second cover curtain 20 need link together in order to the cutting opening of the end of revising this two-lines less than 10D.
Modern for second embodiment, the shorten ultimate principle following (seeing also Fig. 2 A to Fig. 2 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: shown in Fig. 2 C, if after cover curtain design transfer, the pattern of wanting the final image 70 that presents on the semiconductor crystal wafer be line end offset (offset line ends) (that is the line of two-lines terminal not directly over against, and be vis-a-vis with a deviation angle) six lines, if then cover curtain is accurately made the final image 70 of imaging just like that, the line end effect that shortens will take place in the image that is printed off on the wafer in all 12 line ends of these six lines so.
So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 50 and 1 second cover curtain (referred to herein as " terminal compensation cover act ") 60 to solve the shorten problem of effect of this line end.
Fig. 2 D then demonstrates among Fig. 2 A～Fig. 2 B the detailed design of the first cover curtain, 50 and the second cover curtain 60, wherein represent the pattern of the first cover curtain 50 with reference to the hatched example areas in the cover curtain 80, and dashed region is represented the second cutting opening that covers in acts 60 the pattern.Wherein the detailed design and first embodiment of the first cover curtain, the 50 and second cover curtain 60 are identical.
Modern for the 3rd embodiment, the shorten ultimate principle following (seeing also Fig. 3 A to Fig. 3 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: if through after the cover curtain design transfer, the final image of wanting on the semiconductor crystal wafer to present 110 is " T " pattern (" T " pattern) shown in Fig. 3 C, if then cover curtain is accurately made the final image 110 of imaging just like that, so the image that is printed off on the wafer wired end the line end effect that shortens will take place.So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 90 and 1 second cover curtain (referred to herein as " terminal compensation cover act ") 100 to solve the shorten problem of effect of this line end.
Fig. 3 D then demonstrates among Fig. 3 A～Fig. 3 B the detailed design of the first cover curtain, 90 and the second cover curtain 100, wherein represent the pattern of the first cover curtain 90 with reference to the hatched example areas in the cover curtain 120, and dashed region is represented the second cutting opening that covers in acts 100 the pattern.Wherein the design concept and first embodiment of the first cover curtain, the 90 and second cover curtain 100 are roughly the same, unique difference is in to have in: the cutting pattern among this embodiment to be cut mouthful edge open and is adjacent to a line edge in the first cover curtain 90, therefore the cutting of the second cover curtain 100 is opened on herein edge and needs therewith the line edge of the first cover curtain 90 spacing G of being separated by, wherein (preferred values is r＜G＜2r) to 0＜G＜2r, and r is the first cover curtain 90 and the second relative cover curtain position (placement) and the calibration error of covering 100 on curtain, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safety margin) etc. (root mean square, rms).And the effect of above-mentioned spacing G is to prevent that cutting pattern from running into the line edge of the above-mentioned first cover curtain 90.
Modern for the 4th embodiment, the shorten ultimate principle following (seeing also Fig. 4 A to Fig. 4 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: if through after the cover curtain design transfer, the final image of wanting on the semiconductor crystal wafer to present 150 is " L " pattern (" L " pattern) shown in Fig. 4 C, if then cover curtain is accurately made the final image 150 of imaging just like that, so the image that is printed off on the wafer wired end the line end effect that shortens will take place.So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 130 and 1 second cover curtain (referred to herein as " terminal compensation cover act ") 140 to solve the shorten problem of effect of this line end.
Fig. 4 D then demonstrates among Fig. 4 A～Fig. 4 B the detailed design of the first cover curtain, 130 and the second cover curtain 140, wherein represent the pattern of the first cover curtain 130 with reference to the hatched example areas in the cover curtain 160, and dashed region is represented the second cutting opening that covers in acts 140 the pattern.Wherein the design concept and the 3rd embodiment of the first cover curtain, the 130 and second cover curtain 140 are roughly the same, unique difference is in: the cutting pattern among this embodiment has two cutting edge of opening (horizontal resection edge and perpendicular cuts edge) to be respectively adjacent to two lines (horizontal line and perpendicular line) edge in first cover acts 130, therefore the cutting of the second cover curtain 140 edge that is opened on this two place needs respectively therewith two line edges of the first cover curtain 130 spacing G of being separated by, and wherein (preferred values is r＜G＜2r) to 0＜G＜2r.And the effect of above-mentioned spacing G is to prevent that cutting pattern from running into the line edge of the above-mentioned first cover curtain 130.
Modern for the 5th embodiment, the shorten ultimate principle following (seeing also Fig. 5 A to Fig. 5 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: if through after the cover curtain design transfer, the final image of wanting on the semiconductor crystal wafer to present 190 is " H " pattern (" H " pattern) shown in Fig. 5 C, if then cover curtain is accurately made the final image 190 of imaging just like that, so the image that is printed off on the wafer wired end the line end effect that shortens will take place.So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 170 and 1 second cover curtain (referred to herein as " terminal compensation cover act ") to solve the shorten problem of effect of this line end.
Fig. 5 D then demonstrates among Fig. 5 A～Fig. 5 B the detailed design of the first cover curtain, 170 and the second cover curtain 180, wherein represent the pattern of the first cover curtain 170 with reference to the hatched example areas in the cover curtain 200, and dashed region is represented the second cutting opening that covers in acts 180 the pattern.Wherein the design concept and first embodiment of the first cover curtain, the 170 and second cover curtain 180 are roughly the same, unique difference be in: the length of a certain cutting pattern among this embodiment may be not enough to keep prolongation amount T, so have to be opened on maintenance one spacing G between the line edge of herein edge and the contiguous first cover curtain 170 in the cutting of the second cover curtain 180, (0＜G＜2r wherein, and preferred values is r＜G＜2r), runs into the line edge of the above-mentioned first cover curtain 170 to avoid above-mentioned cutting edge of opening.
Modern for the 6th embodiment, the shorten ultimate principle following (seeing also Fig. 6 A to Fig. 6 D) of effect of elimination micro-photographing process center line end proposed by the invention is described in detail in detail: if through after the cover curtain design transfer, the final image of wanting on the semiconductor crystal wafer to present 230 is " L " patterns of openings (" L " opening pattern) shown in Fig. 6 C, if then cover curtain is accurately made the final image 230 of imaging just like that, the open end effect that shortens will take place in the image that is printed off on the wafer in the end of all openings so.So in this embodiment, utilize one first cover curtain (referred to herein as " terminal processing cup curtain "), 210 and 1 second cover curtain (referred to herein as " terminal compensation cover act ") 220 to solve the shorten problem of effect of this open end.
Fig. 6 D then demonstrates the detailed design of the first cover curtain, the 210 and second cover curtain 220 among Fig. 6 A～Fig. 6 B, wherein represent opening in the pattern of the first cover curtain 210 with reference to the solid line open areas in the cover curtain 240, and the cutting opening in the pattern of broken line openings Regional Representative second cover acts 220.And the design concept and first embodiment of the first cover curtain, the 210 and second cover curtain 220 are roughly the same, unique difference be in: in the order cover curtain office, the reduction of the end of the opening in the first cover curtain 210 is I to the maximum, and the reduction of the end of the cutting opening in the second cover curtain 220 is J to the maximum, therefore in order to offset the above-mentioned open end effect that shortens, the end of each opening of the cover of first among this embodiment curtain 210 need be measured T with prolongation and lengthways extend out, and wherein the preferred values of T is more than or equal to I.
And cover the prolongation of the opening in the curtain 210 except needs cover first in order to revise the first cutting opening that covers the open end of curtain 210 in the second cover curtain 220, still need and cover the part that prolongation outwards extends out again, the prolongation amount of the part that outwards extends out again as for this prolongation is F, and wherein the preferred values of F is more than or equal to J.
What deserves to be mentioned is, as long as light sees through this first cover curtain, 210, second cover curtain 220, after positive photosensitive material layer on the wafer exposed, want the edge of opening of the final image 230 that presents to keep a spacing G on the edge of opening of the potential image that the positive photosensitive material layer on this wafer produced (latent image) and the wafer, (0＜G＜2r wherein, and preferred values is r＜G＜2r.), then the cutting edge of opening of the second cover curtain 220 is the edge of opening that can allow to run into final image 230.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be considered as protection category of the present invention.Scope of patent protection of the present invention more ought be decided on claims.
Claims (38)
1. eliminate the shorten method of effect of micro-photographing process center line end for one kind, this method comprises the following steps: at least
Expose this photographic layer in one first cover curtain down, wherein each the bar line on the pattern that this photographic layer institute desire is formed or the end of opening extend the formed pattern of one first prolongation outward, be the pattern of this first cover curtain, and the length of this first prolongation forms the end of line on pattern or opening because the amount that the optical nearing effect is shortened more than or equal to this desire on this photographic layer; And
Expose this photographic layer in one second cover curtain down, wherein the pattern of this second cover curtain comprises at least one opening, and when this second cover curtain and this first cover curtain are overlapping, one second prolongation that any this first prolongation on this first cover curtain and this first prolongation extend outward just with the pattern of this second cover curtain on this opening overlapping, and all these openings on the pattern of this second cover curtain just only cover all these first prolongations and this second prolongation on this first cover curtain, and wherein the length of this second prolongation forms the end of line on pattern or opening because the amount that the optical nearing effect is shortened more than or equal to this desire on this photographic layer.
2. the shorten method of effect of elimination micro-photographing process center line end according to claim 1, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 10 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
3. the shorten method of effect of elimination micro-photographing process center line end according to claim 1, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 9 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
4. the shorten method of effect of elimination micro-photographing process center line end according to claim 1, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 3 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
5. the shorten method of effect of elimination micro-photographing process center line end according to claim 1, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs to meet this line greater than 0 to prevent this opening.
6. the shorten method of effect of elimination micro-photographing process center line end according to claim 1, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs greater than this first cover curtain and this second relative cover curtain position and calibration error of covering interlude, the positioning error of wafer board, all sides of the summation of safe level are value very, meets this line to prevent this opening.
7. the shorten method of effect of elimination micro-photographing process center line end according to claim 1 is characterized in that: the material of above-mentioned photographic layer is (positive) photosensitive material just.
8. eliminate the shorten method of effect of micro-photographing process center line end for one kind, this method comprises the following steps: at least
Expose this photographic layer in one first cover curtain down, and wherein at least one line on the pattern that this photographic layer institute desire is formed or the end of opening extend the formed pattern of one first prolongation outward, are the pattern of this first cover curtain; And
Expose this photographic layer in one second cover curtain down, wherein the pattern of this second cover curtain comprises at least one opening, and when this second cover curtain and this first cover curtain are overlapping, one second prolongation that any this first prolongation on this first cover curtain and this first prolongation extend outward just with the pattern of this second cover curtain on this opening overlapping, and all these openings on the pattern of this second cover curtain just only cover all these first prolongations and this second prolongation on this first cover curtain.
9. the shorten method of effect of elimination micro-photographing process center line end according to claim 8, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 10 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the wherein above-mentioned first cover curtain.
10. the shorten method of effect of elimination micro-photographing process center line end according to claim 8, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 9 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The method of effect 11. elimination micro-photographing process center line end according to claim 8 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 3 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The method of effect 12. elimination micro-photographing process center line end according to claim 8 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs to meet this line greater than 0 to prevent this opening.
The method of effect 13. elimination micro-photographing process center line end according to claim 8 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then this edge of opening need be greater than relative cover curtain position and calibration error of this first cover curtain and this second cover interlude with the distance between this line edge, the positioning error of wafer board, the root-mean-square value of the summation of safe level is met this line to prevent this opening.
The method of effect 14. elimination micro-photographing process center line end according to claim 8 shortens is characterized in that: the length of the first above-mentioned prolongation forms the end of line on pattern or opening because the amount that the optics proximity effcet is shortened during exposure more than or equal to this desire on this photographic layer.
The method of effect 15. elimination micro-photographing process center line end according to claim 8 shortens is characterized in that: the length of the second above-mentioned prolongation forms the end of line on pattern or opening because the amount that the optics proximity effcet is shortened during exposure more than or equal to this desire on this photographic layer.
The method of effect 16. elimination micro-photographing process center line end according to claim 8 shortens is characterized in that: the material of above-mentioned photographic layer is (positive) photosensitive material just.
17. eliminate the shorten method of effect of micro-photographing process center line end for one kind, this method comprises the following steps: at least
Expose this photographic layer in one first cover curtain down, and wherein at least one line on the pattern that this photographic layer institute desire is formed or the end of opening extend the formed pattern of one first prolongation outward, are the pattern of this first cover curtain; And
Expose this photographic layer in one second cover curtain down, wherein the pattern of this second cover curtain comprises at least one opening, and when this second cover curtain and this first cover curtain were overlapping, one second prolongation that any this first prolongation on this first cover curtain and this first prolongation extend was outward just covered by this opening on the pattern of this second cover curtain.
The method of effect 18. elimination micro-photographing process center line end according to claim 17 shortens is characterized in that: above-mentioned optical effect is optical nearing (proximity) effect.
The method of effect 19. elimination micro-photographing process center line end according to claim 17 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 10 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The method of effect 20. elimination micro-photographing process center line end according to claim 17 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 9 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The method of effect 21. elimination micro-photographing process center line end according to claim 17 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 3 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The method of effect 22. elimination micro-photographing process center line end according to claim 17 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs to meet this line greater than 0 to prevent this opening.
The method of effect 23. elimination micro-photographing process center line end according to claim 17 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), the root-mean-square value of the summation of safe level (safetymargin) (root mean square, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs greater than this first cover curtain and this second relative cover curtain position and calibration error of covering interlude, the positioning error of wafer board, the root-mean-square value of the summation of safe level is met this line to prevent this opening.
The method of effect 24. elimination micro-photographing process center line end according to claim 17 shortens is characterized in that: the length of the first above-mentioned prolongation forms the end of line on pattern or opening because the amount that optics proximity effcet (proximity) is shortened during exposure more than or equal to this desire on this photographic layer.
The method of effect 25. elimination micro-photographing process center line end according to claim 17 shortens is characterized in that: the length of the second above-mentioned prolongation forms the end of line on pattern or opening because the amount that optics proximity effcet (proximity) is shortened during exposure more than or equal to this desire on this photographic layer.
The method of effect 26. elimination micro-photographing process center line end according to claim 17 shortens is characterized in that: all these openings on the pattern of the second above-mentioned cover curtain just only cover all these first prolongations and this second prolongation on this first cover curtain.
The method of effect 27. elimination micro-photographing process center line end according to claim 17 shortens is characterized in that: the material of above-mentioned photographic layer is (positive) photosensitive material just.
The employed cover curtain of the effect group 28. an elimination micro-photographing process center line end shortens, when this cover curtain group system forms pattern in order to be reduced on the photographic layer, because of the line end effect that shortens of when exposure this photographic layer of being caused of optical effect, it is characterized in that: this cover curtain is organized and is comprised at least:
One first cover curtain, wherein the pattern on this first cover curtain is that each the bar line on the pattern that forms of this photographic layer institute desire or the end of opening extend the formed pattern of one first prolongation outward, and the length of this first prolongation forms the end of line on pattern or opening because the amount that the optical nearing effect is shortened more than or equal to this desire on this photographic layer: and
One second cover curtain, wherein the pattern of this second cover curtain comprises at least one opening, and when this second cover curtain and this first cover curtain are overlapping, one second prolongation that any this first prolongation on this first cover curtain and this first prolongation extend outward just with the pattern of this second cover curtain on this opening overlapping, and all these openings on the pattern of this second cover curtain just only cover all these first prolongations and this second prolongation on this first cover curtain, and wherein the length of this second prolongation forms the end of line on pattern or opening because the amount that the optical nearing effect is shortened more than or equal to this desire on this photographic layer.
The employed cover curtain of the effect group 29. elimination micro-photographing process center line end according to claim 28 shortens, it is characterized in that: appoint the distance between two-lines if form the end of line on pattern or opening because 10 times of sizes of the amount that exposure is shortened then link together in order to two these first prolongations that cover this two-lines and these second two these openings systems that prolong partly that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain less than this desire on this photographic layer.
The employed cover curtain of the effect group 30. elimination micro-photographing process center line end according to claim 28 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 9 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The employed cover curtain of the effect group 31. elimination micro-photographing process center line end according to claim 28 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 3 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
The employed cover curtain of the effect group 32. elimination micro-photographing process center line end according to claim 28 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), all sides of the summation of safe level (safety margin) are value (root mean square very, rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs to meet this line greater than 0 to prevent this opening.
The employed cover curtain of the effect group 33. elimination micro-photographing process center line end according to claim 28 shortens, it is characterized in that: if the distance between the edge of arbitrary line on the pattern of the arbitrary edge of opening in the above-mentioned second cover curtain and this first cover curtain is less than this first cover curtain and this second relative cover curtain position (placement) and calibration error of covering interlude, the positioning error of wafer board (stage), root-mean-square value (the root mean square of the summation of safe level (safety margin), rms) two times of sizes, then the distance between the edge of this edge of opening and this line needs greater than this first cover curtain and this second relative cover curtain position and calibration error of covering interlude, the positioning error of wafer board, the root-mean-square value of the summation of safe level is met this line to prevent this opening.
The employed cover of the effect curtain group 34. elimination micro-photographing process center line end according to claim 28 shortens is characterized in that: the material of above-mentioned photographic layer is (positive) photosensitive material just.
The employed cover curtain of the effect group 35. an elimination micro-photographing process center line end shortens, when this cover curtain group system forms pattern in order to be reduced on this photographic layer, because of the line end effect that shortens of when exposure this photographic layer of being caused of optical effect, it is characterized in that: this cover curtain is organized and is comprised at least:
One first cover curtain, wherein the pattern on this first cover curtain is that each the bar line on the pattern that forms of this photographic layer institute desire or the end of opening extend the formed pattern of one first prolongation outward; And
One second cover curtain, wherein the pattern of this second cover curtain comprises at least one opening, and when this second cover curtain and this first cover curtain were overlapping, one second prolongation that any this first prolongation on this first cover curtain and this first prolongation extend was outward just covered by this opening on the pattern of this second cover curtain.
The employed cover curtain of the effect group 36. elimination micro-photographing process center line end according to claim 35 shortens, it is characterized in that: above-mentioned optical effect is optical nearing (proximity) effect.
The employed cover curtain of the effect group 37. elimination micro-photographing process center line end according to claim 35 shortens, it is characterized in that: appoint distance between two-lines if the end that forms line on pattern or opening less than this desire on this photographic layer because 10 times of sizes of the amount that exposure is shortened, then links together in order to two these first prolongations covering this two-lines and two these openings systems of this second prolongation that this first prolongation extends outward in this second cover curtain on the pattern of the above-mentioned first cover curtain.
Effect is employed 38. elimination micro-photographing process center line end according to claim 35 shortens
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106272 CN1223904C (en) | 2002-04-08 | 2002-04-08 | Method for eliminating wire end shortening effection in photolithography and used mask set |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106272 CN1223904C (en) | 2002-04-08 | 2002-04-08 | Method for eliminating wire end shortening effection in photolithography and used mask set |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1450409A true CN1450409A (en) | 2003-10-22 |
| CN1223904C CN1223904C (en) | 2005-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02106272 Expired - Lifetime CN1223904C (en) | 2002-04-08 | 2002-04-08 | Method for eliminating wire end shortening effection in photolithography and used mask set |
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| Country | Link |
|---|---|
| CN (1) | CN1223904C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101561633B (en) * | 2008-04-18 | 2011-09-14 | 力晶半导体股份有限公司 | Method for monitoring photoetching technology and monitoring mark |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
-
2002
- 2002-04-08 CN CN 02106272 patent/CN1223904C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101561633B (en) * | 2008-04-18 | 2011-09-14 | 力晶半导体股份有限公司 | Method for monitoring photoetching technology and monitoring mark |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN102608860B (en) * | 2012-03-26 | 2016-02-03 | 深圳市华星光电技术有限公司 | Lithographic methods, reticle combination and exposure system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1223904C (en) | 2005-10-19 |
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