CN1450383A - Clad modulation wave guide type electro-optical modulator - Google Patents
Clad modulation wave guide type electro-optical modulator Download PDFInfo
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- CN1450383A CN1450383A CN03119023A CN03119023A CN1450383A CN 1450383 A CN1450383 A CN 1450383A CN 03119023 A CN03119023 A CN 03119023A CN 03119023 A CN03119023 A CN 03119023A CN 1450383 A CN1450383 A CN 1450383A
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Abstract
The invention is an clad modulating waveguide-type electrooptic modulator, resolving the problem about waveguide transmission loss and larger double refraction of the core layer. It is composed of the core layer and the clad, the former adopting nonlinear electrooptic material and the latter adopting non-electrooptic active material, makes the waveguide effective refraction index vary with the modulatio voltage through only making the waveguide clad adopt the lectrooptic material, and accordingly achieves the modulating purpose. It can increase the modulation frequency.
Description
Technical field
The invention belongs to the optic communication device technical field, particularly photoelectric device such as waveguide type electrooptic modulator.
Background technology
The waveguide type electrooptic modulator mainly is to utilize electrooptical material, as LiNbO
3Ferroelectric crystal, semiconductor material, polar polymer, the generation electrooptical effect realizes under effect of electric field.When modulated electric fields is done the time spent, because electrooptical effect, the refractive index of sandwich layer or waveguide equivalent refractive index be along with modulated Field changes, thereby cause that the light propagation phase also changes with modulated Field, realizes the modulation of light.
At present, in the Electro-optic Modulators design, all adopted the waveguide core layer modulation system, promptly sandwich layer all is to be made of electrooptical material, relevant patent reference US2003/0002766Al (PUB No.).For the polymer waveguide electrooptic modulator that rose day by day in recent years, in order to strengthen nonlinear factor or electrooptical coefficient, usually adopt the polymkeric substance of high Chromaticity mass contg as core material, this makes that the optical loss of polymer modulator is higher relatively, has seriously hindered the practicalization of polymer waveguide modulator.Granted patent number all is LiNbO for the United States Patent (USP) of 20030002766Al at the covering and the sandwich layer of waveguide
3Electrooptical material, its essence still belong to traditional sandwich layer modulation system.The waveguide type electrooptic modulator of sandwich layer modulation adopts the form of Mach-Zehnder interferometer (MZI) mostly.MZI type electrooptic modulator has many implementations, and Fig. 1 is a kind of push-pull schematic diagram wherein.Wherein (a) is the waveguide sectional view, (b) is vertical view.1 is Si or SiO
2Substrate, 2 are the waveguide under-clad layer, and 3 are the sandwich layer of waveguide, are to be made by electrooptical material, and its electrooptical coefficient is bigger usually, and 4 are the waveguide top covering, and 5 is cushion, and 6,7 and 8 is metal electrode, for High Speed Modulation, generally adopts traveling wave electrode.In figure (b), light wave enters from input waveguide 9, and through first Y branch 11, back light-wave energy is divided into two parts, and respectively along interfering arm 13,14 transmission, and interferes two and to obtain modulation in the arms respectively, its separately additive phase sluggishness ΔΦ=(the Γ n of π/λ)
Eff 3γ
33(Γ is the reduction factor, n to VL
EffBe the effective refractive index of waveguide mould, γ
33Be electrooptical coefficient, V is a modulation voltage, and L is an electrode length) (be push-pull type (Push-Pull), two-beam closes ripple through second Y branch 12 and produces interference effect, at last in output waveguide 10 output light modulated to differ a sign.
About sandwich layer modulation waveguide type electrooptic modulator, the device loss of reporting in the general document is mostly up to tens even twenties dB.And it has been generally acknowledged that satisfy practicability require to insert loss should be in the degree of several dB, wherein the propagation loss of waveguide will be below 1dB/cm.Owing to relatively large loss, certainly will limit the length of modulator zone, make that promptly the distance of interaction is limited between light wave and the microwave, this is disadvantageous to further raising modulating frequency.In addition, because the waveguide core district is the big material of electrooptical coefficient, produces electrooptical effect and cause the core district bigger birefringence to occur under the effect of modulated electric fields, this can introduce the relevant loss of considerable polarization at the crooked position of waveguide and with the coupling of optical fiber the time.
Summary of the invention
The present invention proposes a kind of covering modulation waveguide type electrooptic modulator, and purpose is the big birefringence problem that solves duct propagation loss and sandwich layer appearance.
A kind of covering modulation waveguide type electrooptic modulator of the present invention is made of sandwich layer and covering, it is characterized in that described covering adopts non-linear electrooptical material, and sandwich layer adopts no electro-optical activity material.
Described covering modulation waveguide type electrooptic modulator, it is further characterized in that the covering employing contains chromophoric polymeric material, sandwich layer adopts and do not contain chromophoric polymkeric substance or inorganic material.
Covering modulation waveguide type electrooptic modulator involved in the present invention, the covering of its waveguiding structure (being 2 among Fig. 1 and 4) adopts nonlinear electrooptical material; Sandwich layer then uses the material of no electro-optical activity.When the modulated Field that adds acts on covering, cause the change of electrooptical material refractive index, realize the modulation of light.Compare with traditional sandwich layer modulation system, this method there is no the requirement of any harshness on specific implementation, therefore also is easy to realize.
The birefringent phenomenon that covering modulation waveguide type electrooptic modulator of the present invention has low optical transmission loss, sandwich layer is weak, the advantages such as selection degree of freedom increase of core material.In addition, be accompanied by the reduction of loss, the modulator zone length of modulator or the distance of the interaction between light wave and the microwave signal also can be bigger, can reduce half-wave voltage and further improve modulating frequency.Therefore the present invention can improve the performance of Electro-optic Modulators.
Description of drawings
The waveguide type electrooptic modulator schematic diagram of Fig. 1 push-pull type MZI mandrel layers modulation, (a) is that waveguide sectional view, (b) are vertical view among the figure.
The schematic diagram of Fig. 2 MZI type covering modulation polymer Electro-optic Modulators, (a) is that waveguide sectional view, (b) are vertical view among the figure.
The fundamental diagram of Fig. 3 push-pull type MZI type covering modulation Electro-optic Modulators, its sandwich layer is an inorganic material, (a) is that waveguide sectional view, (b) they are vertical view among the figure.
Embodiment
Fig. 2 has provided embodiments of the invention one, and Fig. 3 has provided embodiments of the invention two.
The embodiment of Fig. 2 is the covering modulation polymer Electro-optic Modulators of Mach-Zehnder interferometer type, and its clad material has electro-optical activity for mixing chromophoric PMMA polymkeric substance, and sandwich layer is a polyimide.Wherein (a) is the waveguide sectional view, (b) is vertical view.During making, elder generation is at the Si or the SiO of cleaning
2Evaporation Cr/Au electrode 7 is called underlayer electrode or bottom electrode on the substrate 1; Then spin coating under-clad layer 2 and solidify, corona polarizing; Spin coating waveguide core layer 3 and curing on under-clad layer 2, etching waveguide core layer pattern; Spin coating top covering 4 solidifies simultaneously, corona polarizing; Evaporation Cr/Au top layer electrode 6 and etching electrode pattern; Cut at last with end face and polish.
Its principle of work is: light wave enters from input waveguide 9, light-wave energy is divided into two parts after first Y branch 11, respectively along interfering arm 13,14 transmission, wherein light wave obtains modulation in interfering arm 14, added the sluggish ΔΦ of a phase place, two-beam closes ripple through second Y branch 12 and produces interference effect, at last in output waveguide 10 output light modulated.Interfering arm 14 zones, modulation signal (microwave) then from output port 17 outputs, thereby just can realize that best speeds match obtains big modulation band-width as long as traveling wave electrode is optimized design through input port 16 couplings of traveling wave electrode 15 here.
Fig. 3 has provided the structure and the principle of work of push-pull type Mach-Zehnder interferometer type covering modulation Electro-optic Modulators, and wherein (a) is the waveguide sectional view, (b) is vertical view.The material of waveguide under-clad layer 2 and waveguide top covering 4 is nonlinear ADK77 polymkeric substance, and sandwich layer 3 is inorganic material SiON.Cushion 5, metal electrode 6,7,8 all indicates the same with Fig. 1, the sign of input waveguide 9, first Y branch 11,13,14, second Y branches 12 of interference arm, output waveguide 10 is also consistent with Fig. 1, its principle of work is identical with embodiment one basically, and difference only is that light wave obtains modulation simultaneously at two interference arms 13,14.
Claims (2)
1. a covering modulation waveguide type electrooptic modulator is made of sandwich layer and covering, it is characterized in that described covering adopts non-linear electrooptical material, and sandwich layer adopts no electro-optical activity material.
2. covering modulation waveguide type electrooptic modulator as claimed in claim 1 is characterized in that the covering employing contains chromophoric polymeric material, sandwich layer adopts and do not contain chromophoric polymkeric substance or inorganic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031190235A CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031190235A CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
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| CN1450383A true CN1450383A (en) | 2003-10-22 |
| CN1203361C CN1203361C (en) | 2005-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031190235A Expired - Fee Related CN1203361C (en) | 2003-04-30 | 2003-04-30 | Clad modulation wave guide type electro-optical modulator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483529A (en) * | 2009-08-26 | 2012-05-30 | 株式会社理光 | Electro-optical element |
| CN105829957A (en) * | 2013-12-11 | 2016-08-03 | 住友大阪水泥股份有限公司 | Electro-optical element |
| CN105842783A (en) * | 2015-01-12 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Optical waveguide, manufacturing method therefor, and electronic device |
| CN107870454A (en) * | 2017-12-20 | 2018-04-03 | 武汉邮电科学研究院 | The preparation method and preparation system of a kind of electrooptic modulator |
| CN108008172A (en) * | 2017-11-17 | 2018-05-08 | 东北电力大学 | One kind is based on polymer optical wave guide current transformer chip |
-
2003
- 2003-04-30 CN CNB031190235A patent/CN1203361C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483529A (en) * | 2009-08-26 | 2012-05-30 | 株式会社理光 | Electro-optical element |
| CN102483529B (en) * | 2009-08-26 | 2015-03-04 | 株式会社理光 | Electro-optical element |
| CN105829957A (en) * | 2013-12-11 | 2016-08-03 | 住友大阪水泥股份有限公司 | Electro-optical element |
| CN105842783A (en) * | 2015-01-12 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Optical waveguide, manufacturing method therefor, and electronic device |
| CN108008172A (en) * | 2017-11-17 | 2018-05-08 | 东北电力大学 | One kind is based on polymer optical wave guide current transformer chip |
| CN107870454A (en) * | 2017-12-20 | 2018-04-03 | 武汉邮电科学研究院 | The preparation method and preparation system of a kind of electrooptic modulator |
| CN107870454B (en) * | 2017-12-20 | 2019-09-17 | 武汉邮电科学研究院 | A kind of preparation method and preparation system of electrooptic modulator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1203361C (en) | 2005-05-25 |
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