CN1445529A - Imaging method of tera Hertz wave 2D electro-optical area array - Google Patents
Imaging method of tera Hertz wave 2D electro-optical area array Download PDFInfo
- Publication number
- CN1445529A CN1445529A CN 03116029 CN03116029A CN1445529A CN 1445529 A CN1445529 A CN 1445529A CN 03116029 CN03116029 CN 03116029 CN 03116029 A CN03116029 A CN 03116029A CN 1445529 A CN1445529 A CN 1445529A
- Authority
- CN
- China
- Prior art keywords
- electric light
- battle array
- thz wave
- light face
- face battle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
A 2D electro-optical surface array imaging method for terahertz wave signal features that a 2D electro-optical surface array imaging system is created, an optical analyzer is arranged behind the detecting unit to obtain the modulated light signals of the object to be imaged from each electro-optical crystal detectors, and said light signals are used by CCDs to image on display screen. Its advantages are high resolution of time and space and high S/N ratio.
Description
Technical field
What the present invention relates to is the detection method of a kind of THz wave two-dimensional array imaging, particularly a kind of THz wave two dimension electric light face battle array formation method that is applied to fields such as the biosome detection of field of biology, the structure detection of material science, military coordinate detection belongs to the Detection Techniques field.
Background technology
The terahertz emission ripple is that frequency is 0.1～10THz (0.1～10 * 10
12Hz) THz wave (THz signal) corresponding wavelength is the far infrared radiation of 30 μ m～3000 μ m, and pulse width is about 0.1～10ps magnitude, and is very effective for the optical signal detection in the ultrafast phenomena, even also can produce very high signal to noise ratio (S/N ratio) at normal temperatures.The Detection Techniques of THz wave have immeasurable far reaching significance in fields such as scientific research in the future, social production, military affairs.Still the direct photoelectricity that can't realize at present THz wave receives, the detection method of THz wave commonly used is electrooptical effect and an optics analyzing technology of utilizing semiconductor zinc telluridse (ZnTe) film or body material, the strength signal of THz wave is transformed into is convenient to the conventional light signal of surveying and surveys, thereby obtain the strength signal and the spectrum distribution thereof of THz wave.
Find by literature search, Zhiping Jiang and Xi-Cheng Zhang, " Terahertz Imaging viaElectrooptic Effect ", IEEE Transactions On Microwave Theory and Techniques, vol.47, no.Pp.2644-2650,1999 (Jiang Zhiping, Zhang Xicheng, " utilize electrooptical effect to carry out the THz wave imaging ", " microwave theory and technique journal ", the 47th volume, the 2644th page to the 2650th page, 1999), it is to adopt mechanical scanning that this article is mentioned existing THz wave formation method, is about to the terahertz radiation ripple and focuses on, imaging object is placed on the focal plane and carries out one dimension or two-dimentional machinery scanning, carries out pointwise then to receiving line by line and showing.The image taking speed of mechanical scanning is slower, and the scanning upper limit is arranged, and the highest is the order of magnitude that a second 100 pixels is arranged approximately, and obviously temporal resolution is not high.THz wave imaging under the existing simultaneously two-dimensional imaging technology is to utilize a large-area zinc telluridse material to collect signal, the spatial resolution visual from the data of being reported is lower, the homogeneity of material is very big to the influence of image quality in addition, is a technical matters that needs to be resolved hurrily so improve the spatial and temporal resolution of THz wave imaging.
Summary of the invention
The present invention be directed to the deficiency and the defective of above-mentioned technology, a kind of THz wave two dimension electric light face battle array formation method is provided, utilize two-dimentional electric light face battle array imaging system, need not mechanical scanning, can realize Polaroid, fast imaging, thus the spatial resolution of THz wave imaging improved, shorten imaging time.
The present invention is achieved by the following technical solutions, the present invention is by making up two-dimentional electric light face battle array imaging system, replace existing monolithic shape detector with two-dimensional array electro-optic crystal detector, place an optics analyzer in the probe portion back, light signal after taking-up is modulated corresponding to the object to be imaged on each two-dimensional array electro-optic crystal detector, image on the electronic display through charge-coupled image sensor again, finish two-dimentional electric light face battle array imaging process.
Below the inventive method is further described, concrete steps are as follows:
At first, make up the two-dimentional electric light face battle array of a THz wave (THz signal) imaging system, the i.e. m that forms by m * n small size zinc telluridse * n two dimension electric light face battle array, in this case, the zinc telluridse array element of each small area (constitutes a small size unit of m * n two-dimensional array, be referred to as array element) all be an independently detector, i.e. two-dimensional array electro-optic crystal detector;
Secondly, the semiconductor zinc telluridse as replacing the detectable signal of the monolithic that has same area now on the plane that two-dimensional array electro-optic crystal detector is placed on THz wave two dimension electric light face battle array imaging system is a monolithic shape detector, and the THz wave imaging ripple that is loaded with object two dimension THz wave intensity distributions is by this m * n two dimension electric light face battle array;
Then, place an optics analyzer in the probe portion back, (concrete wavelength is by surveying the optical wavelength decision at visible, near infrared to obtain object through the optics analyzing, the near infrared ripple of the present femto-second laser that adopts) THz wave picture takes out corresponding to the light signal after the modulation of the object to be imaged on each two-dimensional array electro-optic crystal detector;
At last, the light signal after the object to be imaged modulation carries out opto-electronic conversion, signal storage and signal transmission through area array CCD (charge-coupled image sensor), on the THz wave image-forming electron display screen that is detected, finishes two-dimentional electric light face battle array imaging process.
Not only can use the semiconductor material zinc telluridse in the THz wave two dimension electric light face battle array imaging system, can also use the stronger organic polymer thin film of electrooptical effect as two-dimensional array electro-optic crystal material for detector, these materials have good electrooptical property, by molecular beam epitaxy (MBE), carrying out physical chemistry behind the chemically grown, to be etched into grid netted and constitute m * n two dimension electric light face battle array, to realize the acquired signal effect to the two dimension of THz wave.M * n two dimension electric light face battle array is made up of the small size array element of electrooptical materials such as zinc telluridse or organic polymer, and size is obtained by molecular beam epitaxy and physical chemistry etching, and the size of material is 1 * 10 at μ m
-12The m magnitude.Such face battle array can improve the spatial resolution of surveying terahertz wave signal.The inventive method has been avoided the complexity of mechanical scanning, shortens imaging time, and spatial resolution is subjected to the restriction of the spatial resolution of the spatial resolution of two-dimensional array and CCD.
The present invention has substantive distinguishing features and marked improvement, the present invention can direct detection the signal of two dimension THz wave, utilize CCD to carry out two-dimensional imaging then.Utilizing under the high time resolution of terahertz wave signal, adopting the material of electrooptical effects such as zinc telluridse, organic polymer, improving the THz wave image quality, satisfying the request for utilization in fields such as biology, material science, military field, medical science.The present invention has very high temporal resolution and reasonable spatial resolution, signal to noise ratio (S/N ratio), be a kind of new technology of gathering the THz wave of extensive application prospect and value, its meaning is to have realized a leap from the not high two-dimensional imaging of point by point scanning acquired signal, spatial resolution to time and spatial resolution two-dimensional array imaging preferably.
Embodiment
Embodiment below is provided, content of the present invention is done further to understand, detailed process is as follows:
Select the semiconductor material zinc telluridse as a burst of first material of the electric light face of receiving system: the growth of semiconductor material zinc telluridse adopts molecular beam epitaxy to grow, and utilizes lithographic technique that size is made needed size then.The a burst of elemental size of each two-dimentional electric light face is the specification of about 1 μ m * 1 μ m, adjacent array element standoff distance is about 10 μ m, refer again to the pixel 2048 * 2048 of CCD, m=2048 in the m * n two dimension electric light face battle array design size so, n=2048, the whole m * long-pending 2cm * 2cm that is roughly of n two dimension electric light face front.In m * n two dimension electric light face battle array size design, its m * n two-dimensional design resolution should not be higher than the pixel of CCD; If surpass the pixel of CCD, CCD just can not differentiate so carefully, can't catch up with the resolution of m * n two-dimensional design.
THz wave is radiated on the object (this object space is the object plane of imaging len), and through this imaging len, object image-forming is in picture plane (the zinc telluridse m of above-mentioned design * n two dimension electric light face battle array promptly be placed on this as the plane on).At imaging len and place the completely reflecting mirror (this catoptron is to the light total reflection of 800nm wavelength, to other wave band total transmissivity) of a 800nm wavelength between as the plane with 45.The pulse laser of the 800nm wavelength of femto-second laser is as surveying light, and the direction of propagation of surveying light is vertical with the Terahertz direction of wave travel.Survey light and rise partially through the polarizer, and thus after 45 ° of mirror reflects and THz wave with the equidirectional two-dimentional electric light face of the zinc telluridse m * n battle array that incides our design together of optical axis.Outgoing beam obtains the THz wave picture of object at visible, near infrared (the near infrared ripple 800nm wavelength of the femto-second laser of employing) through an optics analyzer through the optics analyzing, takes out corresponding to the light signal after the modulation of the object to be imaged on the zinc telluridse array element; At last, the light signal after the object to be imaged modulation carries out opto-electronic conversion, signal storage and signal transmission through area array CCD (charge-coupled image sensor), and the THz wave that is detected is imaged on the electronic display, finishes two-dimentional electric light face battle array imaging process.Along with improving constantly of now material preparation and lithographic technique, the array element of m * n two dimension electric light face battle array that the present invention is designed can be done forr a short time, has so just improved spatial resolution more.
Claims (4)
1, a kind of THz wave two dimension electric light face battle array formation method, it is characterized in that: by making up two-dimentional electric light face battle array imaging system, replace existing monolithic shape detector with two-dimensional array electro-optic crystal detector, place an optics analyzer in the probe portion back, light signal after taking-up is modulated corresponding to the object to be imaged on each two-dimensional array electro-optic crystal detector, image on the electronic display through charge-coupled image sensor again, finish two-dimentional electric light face battle array imaging process.
2, THz wave two dimension electric light face battle array formation method according to claim 1 is characterized in that concrete steps are as follows:
At first, make up THz wave two dimension electric light face battle array imaging system, i.e. the two-dimentional electric light face of the m that forms by m * n small size zinc telluridse * n battle array, the zinc telluridse array element of each small area all is an independently detector, i.e. two-dimensional array electro-optic crystal detector,
Secondly, two-dimensional array electro-optic crystal detector is placed on the picture plane of THz wave two dimension electric light face battle array imaging system, replacing the original semiconductor zinc telluridse of the detectable signal of the monolithic of area equally is monolithic shape detector, the THz wave imaging ripple that is loaded with object two dimension THz wave intensity distributions is by this face battle array
Then, place an optics analyzer in the probe portion back, obtain object in THz wave imaging visible, the near infrared ripple, take out corresponding to the light signal after the modulation of the object to be imaged on each two-dimensional array electro-optic crystal detector through the optics analyzing,
At last, the light signal after the object to be imaged modulation carries out opto-electronic conversion, signal storage and signal transmission by surface array charge-coupled device, the THz wave that is detected is imaged on the electronic display again, finishes two-dimentional electric light face battle array imaging process.
3, THz wave two dimension electric light face battle array formation method according to claim 1, it is characterized in that adopting the semiconductor material zinc telluridse, or adopt the stronger organic polymer thin film of electrooptical effect as two-dimensional array electro-optic crystal material for detector, these materials are by molecular beam epitaxy, and carrying out physical chemistry behind the chemically grown, to be etched into grid netted and constitute m * n two dimension electric light face battle array.
4, according to claim 2 or 3 described THz wave two dimension electric light face battle array formation methods, it is characterized in that m * n two dimension electric light face battle array material and size thereof are obtained by molecular beam epitaxy and physical chemistry etching, the size of material is 1 * 10 at μ m
-12The m magnitude.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03116029 CN1445529A (en) | 2003-03-27 | 2003-03-27 | Imaging method of tera Hertz wave 2D electro-optical area array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03116029 CN1445529A (en) | 2003-03-27 | 2003-03-27 | Imaging method of tera Hertz wave 2D electro-optical area array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1445529A true CN1445529A (en) | 2003-10-01 |
Family
ID=27814840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03116029 Pending CN1445529A (en) | 2003-03-27 | 2003-03-27 | Imaging method of tera Hertz wave 2D electro-optical area array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1445529A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100446730C (en) * | 2005-12-16 | 2008-12-31 | 华南师范大学 | Photoacoustic imaging and chromatographic imaging method based on acoustic lens and apparatus thereof |
| CN100562743C (en) * | 2004-07-30 | 2009-11-25 | 佳能株式会社 | Sensor device |
| CN102004087A (en) * | 2010-09-29 | 2011-04-06 | 首都师范大学 | Transmission type Terahertz wave real-time image scanning device |
| CN102087211A (en) * | 2010-12-08 | 2011-06-08 | 南京邮电大学 | Terahertz spectral analysis device and detection method for biofilm |
| CN102680213A (en) * | 2012-06-18 | 2012-09-19 | 合肥知常光电科技有限公司 | Rapid detecting method and device for optical property of heavy-caliber optical element |
| CN102980857A (en) * | 2012-11-20 | 2013-03-20 | 中国科学院光电技术研究所 | Terahertz time-domain spectroscopy system for realizing terahertz rapid imaging by using frequency optical comb |
| WO2015014129A1 (en) * | 2013-07-29 | 2015-02-05 | 南开大学 | Thz super-resolution two-dimensional imaging method and system |
| CN113008907A (en) * | 2019-12-19 | 2021-06-22 | 华为技术有限公司 | Terahertz sensing system and terahertz sensing array |
-
2003
- 2003-03-27 CN CN 03116029 patent/CN1445529A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100562743C (en) * | 2004-07-30 | 2009-11-25 | 佳能株式会社 | Sensor device |
| CN100446730C (en) * | 2005-12-16 | 2008-12-31 | 华南师范大学 | Photoacoustic imaging and chromatographic imaging method based on acoustic lens and apparatus thereof |
| CN102004087A (en) * | 2010-09-29 | 2011-04-06 | 首都师范大学 | Transmission type Terahertz wave real-time image scanning device |
| CN102087211A (en) * | 2010-12-08 | 2011-06-08 | 南京邮电大学 | Terahertz spectral analysis device and detection method for biofilm |
| CN102087211B (en) * | 2010-12-08 | 2012-08-15 | 南京邮电大学 | Terahertz spectral analysis device and detection method for biofilm |
| CN102680213A (en) * | 2012-06-18 | 2012-09-19 | 合肥知常光电科技有限公司 | Rapid detecting method and device for optical property of heavy-caliber optical element |
| CN102680213B (en) * | 2012-06-18 | 2015-03-25 | 合肥知常光电科技有限公司 | Rapid detecting method and device for optical property of heavy-caliber optical element |
| CN102980857A (en) * | 2012-11-20 | 2013-03-20 | 中国科学院光电技术研究所 | Terahertz time-domain spectroscopy system for realizing terahertz rapid imaging by using frequency optical comb |
| CN102980857B (en) * | 2012-11-20 | 2015-01-07 | 中国科学院光电技术研究所 | Terahertz time-domain spectroscopy system for realizing terahertz rapid imaging by using frequency optical comb |
| WO2015014129A1 (en) * | 2013-07-29 | 2015-02-05 | 南开大学 | Thz super-resolution two-dimensional imaging method and system |
| CN113008907A (en) * | 2019-12-19 | 2021-06-22 | 华为技术有限公司 | Terahertz sensing system and terahertz sensing array |
| CN113008907B (en) * | 2019-12-19 | 2024-04-12 | 华为技术有限公司 | Terahertz sensing system and terahertz sensing array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1235009A (en) | Thermal imager | |
| CN105765370B (en) | The system and method that high contrast, near real-time for Terahertz image acquire | |
| Grossman et al. | Active millimeter-wave imaging for concealed weapons detection | |
| CN103091255A (en) | Terahertz time-space resolution imaging system, imaging method and application thereof | |
| CN103163145A (en) | Terahertz continuous wave system and method of obtaining three-dimensional image thereof | |
| CN101000300A (en) | Linear polarization optical imaging method and device | |
| CN105227815A (en) | A kind of passive type list pixel is looked in the distance imaging system and formation method | |
| CN101571592B (en) | Passive millimeter wave scanning imaging system based on optical upconversion | |
| CN1445529A (en) | Imaging method of tera Hertz wave 2D electro-optical area array | |
| CN103149217B (en) | Infrared phase locking and imaging method and device for surface and subsurface defect detection of optimal element | |
| WO2021188177A1 (en) | Quantum electromagnetic field sensor and imager | |
| CN108121059A (en) | A kind of parallel micro imaging systems of STED based on Structured Illumination | |
| Chen et al. | Detection and imaging of distant targets by near-infrared polarization single-pixel lidar | |
| CN202614666U (en) | Two-dimensional Terahertz imaging system | |
| CN102721664A (en) | Multiple beam laser induced infrared radiation imaging apparatus and method | |
| CN207764388U (en) | Active continuous wave Terahertz human body cache detection device | |
| CN107064050B (en) | Continuous terahertz wave imaging system and method thereof | |
| Chenault et al. | Pyxis handheld polarimetric imager | |
| Spooren et al. | RGB-NIR active gated imaging | |
| US7084649B2 (en) | Method and apparatus for measuring three-dimensional distribution of electric field | |
| CN110108657A (en) | The hypersensitivity mid-long wavelength IR images method and imaging system of room temperature operating | |
| CN108693550B (en) | A kind of ionising radiation detection method and system based on optical property modulation | |
| CN114152589A (en) | Terahertz hyperspectral imaging system based on dual-optical-frequency comb light source | |
| CN102650549B (en) | FPA (focal plane array)-based uncooled thermal imaging optical system modulated by point grid beamsplitter | |
| CN1241395A (en) | Digital near-infrared medical imaging and foreign body positioning unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |