CN1441521A - Passive mode-locking Nd:YAG picosecond laser with laser-emitting time in high stability - Google Patents
Passive mode-locking Nd:YAG picosecond laser with laser-emitting time in high stability Download PDFInfo
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- CN1441521A CN1441521A CN 03114621 CN03114621A CN1441521A CN 1441521 A CN1441521 A CN 1441521A CN 03114621 CN03114621 CN 03114621 CN 03114621 A CN03114621 A CN 03114621A CN 1441521 A CN1441521 A CN 1441521A
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Abstract
An outgoing high stabilized passive modelocking Nd:YAG ps laser is to set a totally reflecting mirror at a side, an output mirror at the other side of a horizontal optical axis of a mounting board, a tankage at a side of the totally reflecting mirror, a laser cavity at a side of the output mirror between the two mirros, to set a mode selector with clear aperture between the tankage and the laser cavity and a light drift controller between the laser cavity and output micror which is inserted into a laser oscillation level made up of totally reflecting mirror, tankage, mode selector, laser cavity and output mirror to control to output pulse laser drift time below 100 micro s, stabilizing the output energy within 10%.
Description
Technical field
The invention belongs to laser technology field, be specifically related to the passive mode locking Nd:YAG picosecond laser of bright dipping time high stability.
Background technology
Mode-locked laser is to be used for producing ultra-short pulse laser.In some applications, require the single laser pulse of mode-locked laser generation psec width, for example the holographic of ultrafast phenomena.If the duration by the phenomenon itself diagnosed is very short, if as holographic lighting source---laser pulse and phenomenon can not be synchronous, just can not photograph the hologram image of ultrafast phenomena and other information.If strict time relationship is arranged between external synchronization signal and the ultrafast phenomena,, just require the drift between bright dipping time of external synchronization signal and laser definitely can not surpass a numerical value in order to photograph the hologram image of ultrafast phenomena.The quick explosion phenomenon that for example will study just requires to surpass 1 microsecond the drift time of laser pulse.
The passive mode locking Nd:YAG laser that uses mostly adopts xenon flash lamp pumping at present, the laser pulse of the laser of this type of pumping output with respect to the time drift between the outer synchronous electric triggering signal all between 5~55 microseconds, can not satisfy the needs that some research is used far away, be the anxious technical issues that need to address.
Summary of the invention
Technical problem to be solved by this invention is to provide the drift between a kind of bright dipping time that makes external synchronization signal and laser to be controlled at the passive mode locking Nd:YAG picosecond laser of the following bright dipping time high stability of 1 microsecond.
Solving the problems of the technologies described above the technical scheme that is adopted is: the axial side of horizon light is provided with total reflective mirror on mounting panel, opposite side is provided with outgoing mirror, the side that a side of total reflective mirror is provided with dye cell, outgoing mirror between same horizon light direction of principal axis total reflective mirror on the mounting panel and outgoing mirror is provided with laser cavity, processing disposed thereon or be manufactured with the modeling device of light hole between same horizon light direction of principal axis dye cell on the mounting panel and laser cavity also is provided with light drift controller between same horizon light direction of principal axis laser cavity on the mounting panel and outgoing mirror.
Light drift controller of the present invention comprises: the Glan prism, controller, the Pockers cell that are arranged on the mounting panel are dark, Glan prism is arranged on the bright dipping side of laser cavity, Pockers cell is arranged on the inboard of outgoing mirror, and controller is arranged between Glan prism and the Pockers cell.
Controller of the present invention comprises: photoelectric conversion circuit, threshold circuit, shaping circuit, delay circuit, circuits for triggering, high-voltage pulse generator, the input of the output termination threshold circuit of photoelectric conversion circuit, the input of the output termination shaping circuit of threshold circuit, the input of the output termination delay circuit of shaping circuit, the input of the output contact Power Generation Road of delay circuit, the input of the input termination high-voltage pulse generator of circuits for triggering, the output termination Pockers cell of high-voltage pulse generator.
After light of the present invention drift controller is inserted in the laser generation level that is made of total reflective mirror, dye cell, modeling device, laser cavity, outgoing mirror, the bright dipping time of mode locking pulse when making time of time-delay just in time equal not add light drift controller.Have only when the xenon lamp luminous intensity of laser cavity is higher than thresholding intensity, by the signal of the photoelectric conversion circuit of controller output through shaping circuit, delay circuit, circuits for triggering, trigger high-voltage pulse generator, the high-voltage pulse of the certain width that is produced is added on the Pockers cell, make the laser generation level drop to minimum, laser cavity starting of oscillation this moment, output mode-locked laser pulse at extremely short time internal loss, and do not vibrating At All Other Times, do not export mode locking pulse.Laser is controlled at below 100 microseconds output pulse laser drift time through light drift controller, and highly stable reliable, and the output energy stabilization is in 10%.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the invention.
Fig. 2 is the electrical principle block diagram of the controller 5-2 of light drift controller 5 among Fig. 1.
Fig. 3 is the electronic circuit schematic diagram of the controller 5-2 of light drift controller 5 among Fig. 1.
Embodiment
The present invention is described in more detail below in conjunction with drawings and Examples, but the invention is not restricted to these embodiment.
In Fig. 1, the passive mode locking Nd:YAG picosecond laser of the bright dipping time high stability of present embodiment is connected by: total reflective mirror 1, dye cell 2, modeling device 3, laser cavity 4, light drift controller 5, outgoing mirror 6, mounting panel 7 and constitutes.The axial left side of horizon light is equipped with total reflective mirror 1 on mounting panel 7, the right side is equipped with outgoing mirror 6, the left side that the right side of total reflective mirror 1 is equipped with dye cell 2, outgoing mirror 6 between same horizon light direction of principal axis total reflective mirror 1 on the mounting panel 7 and outgoing mirror 6 is equipped with light drift controller 5, and the right side of dye cell 2 is equipped with the drift about left side of controller 5 of modeling device 3, light laser cavity 4 is installed between same horizon light direction of principal axis dye cell 2 on the mounting panel 7 and light drift controller 5.Be processed with on the modeling device 3 and can xenon lamp 4-1 be installed in the laser cavity 4 by the light hole a of light.Total reflective mirror 1, dye cell 2, modeling device 3, laser cavity 4, outgoing mirror 6 have been formed the laser generation level of passive mode locking Nd:YAG picosecond laser.Light drift controller 5 inserts in the laser generation level, is used to control the starting of oscillation time of laser generation level internal loss and oscillator stage, through outgoing mirror 6 output mode-locked laser pulse sequences.
The light drift controller 5 of present embodiment is made of Glan prism 5-1, the controller 5-2, the Pockers cell 5-3 that are installed on the mounting panel 6.Glan prism 5-1 is installed in the bright dipping side near laser cavity 4, Pockers cell 5-3 is installed in the inboard near outgoing mirror 6, Glan prism 5-1 and Pockers cell 5-3 are adjusted to and outgoing mirror 6 same optical axises, and controller 5-2 is installed between Glan prism 5-1 and the Pockers cell 5-3.When the luminous intensity of the xenon lamp 4-1 in the laser cavity 4 that is triggered is lower than thresholding intensity, can not trigger light drift controller 5, when having only the luminous intensity of xenon lamp 4-1 to be higher than thresholding intensity, could start light drift controller 5, make be controlled at below 100 microseconds drift time of output laser, the output energy stabilization is in 10%.
In Fig. 2, the controller 5-2 of present embodiment is connected and composed by photoelectric conversion circuit, threshold circuit, shaping circuit, delay circuit, circuits for triggering, high-voltage pulse generator, the input of the output termination threshold circuit of photoelectric conversion circuit, the input of the output termination shaping circuit of threshold circuit, the input of the output termination delay circuit of shaping circuit, the input of the output contact Power Generation Road of delay circuit, the input of the input termination high-voltage pulse generator of circuits for triggering, the output termination Pockers cell of high-voltage pulse generator.
In Fig. 3, the photoelectric conversion circuit of present embodiment is connected and composed by photoelectric tube P1, R1.Photoelectric tube P1 is installed in outside the laser cavity 4, near the left side of laser cavity 4, also can be installed in the right side near laser cavity 4.The positive pole of photoelectric tube P1 meets R1 and threshold circuit, negative pole connect the 9v positive source, the other end ground connection of R1.After photoelectric tube P1 received the light signal that xenon lamp 4-1 sends in the laser cavity 4, P1 became light signal into the signal of telecommunication by photoelectric tube, outputed to threshold circuit by R1.
The threshold circuit of present embodiment is connected and composed by photoelectrical coupler O1, R2, R3, potentiometer W1.The positive pole of the diode of the positive pole of the end of potentiometer W1 and adjustable termination photoelectric tube P1, another termination photoelectrical coupler O1, the negative pole of the diode of photoelectrical coupler O1 is by R2 ground connection, and the collector electrode of the triode of photoelectrical coupler O1 connects the 5v positive source, emitter is by R3 ground connection and connect shaping circuit.The decay of the attenuator that is made of via potentiometer W1, R2 the signal of telecommunication of photoelectric conversion circuit output is added to the input of photoelectrical coupler O1, the input that outputs to shaping circuit through the emitter and the R3 of photoelectrical coupler O1 triode.
The shaping circuit of present embodiment is connected and composed by integrated circuit U1:A, integrated circuit U2:A, R4, R5, C1, and the model of integrated circuit U1:A is 74LS74, and the model of integrated circuit U2:A is 74LS05.2 pin of integrated circuit U1:A connect that emitter that 5v positive source, 3 pin meet photoelectrical coupler O1, an end, 4 pin that 1 pin meets R5 and C1 connect the 5v positive source, 6 pin connect the other end of R5 and the input of integrated circuit U2:A, the other end ground connection of C1, the output termination delay circuit of integrated circuit U2:A also connects the positive pole of 15V power supply by R4.When the luminous intensity of the xenon lamp 4-1 that is triggered is lower than thresholding intensity, can not trigger shaping circuit, when having only the luminous intensity of xenon lamp 4-1 to be higher than thresholding intensity, could trigger shaping circuit.
The delay circuit of present embodiment is connected and composed by integrated circuit U3:A, integrated circuit U3:B, photoelectrical coupler O2, R6~R9, C2, C3, potentiometer W2, and the model of integrated circuit U3:A and integrated circuit U3:B is 4538.The positive pole of the diode of photoelectrical coupler O2 connects the output, negative pole of integrated circuit U2:A by R6 ground connection, and the collector electrode of the triode of photoelectrical coupler O2 connects 15v positive source, emitter by R7 ground connection and connect 4 pin of integrated circuit U3:A.The other end, 3 pin and 5 pin ground connection, 7 pin that 1 pin of integrated circuit U3:A meets the end of C2, a end that 2 pin meet R8 and C2 connect 12 pin of integrated circuit U3:B, an end, the other end of potentiometer W2 and the adjustable termination 15v positive source of another termination potentiometer W2 of R8.11 of integrated circuit U3:B connects the end of C3, a end that 14 pin meet R9 and the other end, 10 pin of C3 with 13 pin ground connection, 15 pin and contacts Power Generation Road, another termination 15v positive source of R9.Output to the signal of telecommunication of photoelectrical coupler O2 input by the integrated circuit U2:A of shaping circuit, output to integrated circuit U3:B from the input of 4 pin, 7 pin of integrated circuit U3:A, after the monostable time-delay that constitutes via integrated circuit U3:A and integrated circuit U3:B, hold 10 pin to output to circuits for triggering from the Q of integrated circuit U3:B.
The circuits for triggering of present embodiment are connected and composed by triode T1, R10~R12, C4.10 pin, the collector electrode that the base stage of triode T1 is connected into circuit U 3:B connects the 15v positive source, emitter connects the end of C4 and by R10 ground connection, the end of another termination R12 of C4 also passes through R11 ground connection, another termination high-voltage pulse generator of R12.By the signal of telecommunication of delay circuit output base stage to triode T1, amplify through triode T1, pass through R12 and output to high-voltage pulse generator.
The high-voltage pulse generator of present embodiment is connected and composed by field-effect transistor T2~field-effect transistor T5, R13~R21, C5~C10.The other end of the R12 of the grid contact Power Generation Road of field-effect transistor T2, source ground, drain electrode connects the source electrode of field-effect transistor T3 and connects the grid of field-effect transistor T3 and the end of C5 by R13, the drain electrode of field-effect transistor T3 connects the source electrode of field-effect transistor T4 and connects the grid of field-effect transistor T4 and the end of C6 by R14, the drain electrode of field-effect transistor T4 connects the source electrode of field-effect transistor T5 and connects the grid of field-effect transistor T5 and the end of C7 by R15, the drain electrode of field-effect transistor T5 meets R16 and meets an end and Pockers cell 5-3 with C10, another termination C8 of R16 and the end of C9 also connect the 4000v positive source by R17, the other end ground connection of C5~C9, the other end of C10 is by R18 and R19 ground connection and by R20 and R21 ground connection.Be applied to the grid of field-effect transistor T2 by the signal of telecommunication of circuits for triggering output, through amplification by field-effect transistor T2~field-effect transistor T5 string, drain electrode output high-voltage pulse by field-effect transistor T5 is added to Pockers cell 5-3, open Pockers cell 5-3, make the loss of laser generation level in the extremely short time drop to minimum, laser cavity 4 starting of oscillations this moment, the output mode-locked laser.
Claims (3)
1, a kind of passive mode locking Nd:YAG picosecond laser of bright dipping time high stability, go up the axial side of horizon light at mounting panel [7] and be provided with total reflective mirror [1], opposite side is provided with outgoing mirror [6], a side of total reflective mirror [1] is provided with dye cell [2] between last same horizon light direction of principal axis total reflective mirror of mounting panel [7] [1] and outgoing mirror [6], one side of outgoing mirror [6] is provided with laser cavity [4], processing disposed thereon or be manufactured with the modeling device [3] of light hole [a] between last same horizon light direction of principal axis dye cell of mounting panel [7] [2] and laser cavity [4] is characterized in that also being provided with light drift controller [5] between last same horizon light direction of principal axis laser cavity of mounting panel [7] [4] and outgoing mirror [6].
2, according to the passive mode locking Nd:YAG picosecond laser of the described bright dipping of claim 1 time high stability, it is characterized in that said light drift controller [5] comprising: be arranged on Glan prism [5-1], controller [5-2], Pockers cell [5-3] on the mounting panel [7], Glan prism [5-1] is arranged on the bright dipping side of laser cavity [4], Pockers cell [5-3] is arranged on the inboard of outgoing mirror [6], and controller [5-2] is arranged between Glan prism [5-1] and the Pockers cell [5-3].
3, passive mode locking Nd:YAG picosecond laser according to the described bright dipping of claim 2 time high stability, it is characterized in that said controller [5-2] comprising: photoelectric conversion circuit, threshold circuit, shaping circuit, delay circuit, circuits for triggering, high-voltage pulse generator, the input of the output termination threshold circuit of photoelectric conversion circuit, the input of the output termination shaping circuit of threshold circuit, the input of the output termination delay circuit of shaping circuit, the input of the output contact Power Generation Road of delay circuit, the input of the input termination high-voltage pulse generator of circuits for triggering, the output termination Pockers cell [5-3] of high-voltage pulse generator.
Priority Applications (1)
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CN 03114621 CN1211896C (en) | 2003-04-08 | 2003-04-08 | Passive mode-locking Nd:YAG picosecond laser with laser-emitting time in high stability |
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CN 03114621 CN1211896C (en) | 2003-04-08 | 2003-04-08 | Passive mode-locking Nd:YAG picosecond laser with laser-emitting time in high stability |
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CN1441521A true CN1441521A (en) | 2003-09-10 |
CN1211896C CN1211896C (en) | 2005-07-20 |
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CN 03114621 Expired - Fee Related CN1211896C (en) | 2003-04-08 | 2003-04-08 | Passive mode-locking Nd:YAG picosecond laser with laser-emitting time in high stability |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112009000018T5 (en) | 2009-05-04 | 2011-05-05 | Beijing Gk Laser Technology Co., Ltd. | Passive mode-locked picosecond laser device |
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2003
- 2003-04-08 CN CN 03114621 patent/CN1211896C/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112009000018T5 (en) | 2009-05-04 | 2011-05-05 | Beijing Gk Laser Technology Co., Ltd. | Passive mode-locked picosecond laser device |
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