CN205752971U - Ultrashort laser pulse generating means for anti-collision system for automobile - Google Patents
Ultrashort laser pulse generating means for anti-collision system for automobile Download PDFInfo
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- CN205752971U CN205752971U CN201620066135.2U CN201620066135U CN205752971U CN 205752971 U CN205752971 U CN 205752971U CN 201620066135 U CN201620066135 U CN 201620066135U CN 205752971 U CN205752971 U CN 205752971U
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- 230000005669 field effect Effects 0.000 claims abstract description 25
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000005611 electricity Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
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Abstract
The utility model discloses a kind of ultrashort laser pulse generating means for anti-collision system for automobile, it includes isolating circuit, drive circuit and laser pulse generation circuit；Described drive circuit connects respectively at described isolation circuit and laser pulse generation circuit.Ultrashort laser pulse generating means for anti-collision system for automobile of the present utility model, its pulse signal can be sent by single-chip microcomputer, through isolation and driving, controls turning on and off of field effect transistor Q1, and then controls the luminescence of semiconductor laser D2.Reduce the capacitance of electric capacity C3, reduce the resistance of resistance R8 simultaneously, and then realize ultrashort laser pulse.
Description
Technical field
This utility model relates to Laser emission control field, particularly relates to a kind of swashing for anti-collision system for automobile
Light ultrashort pulse generating means.
Background technology
The ultrashort laser pulse generating means of prior art, circuit structure is complicated, and response speed is slow, stability
The most high defect, element is the most, and the reliability of device is the lowest, it is important that noise jamming is the biggest so that skill
It is complicated that art personnel or other staff debug process, it is impossible to reaches the demand of through engineering approaches.
Accordingly, it would be desirable to design a kind of ultrashort laser pulse generating means for anti-collision system for automobile, it is in reality
When existing ultrashort pulse is launched, speed is fast, stability is high.
Utility model content
This utility model purpose is to provide the laser for anti-collision system for automobile that a kind of speed is fast, stability is high
Ultrashort pulse generating means.
This utility model solves technical problem and adopts the following technical scheme that a kind of swashing for anti-collision system for automobile
Light ultrashort pulse generating means, it includes isolating circuit, drive circuit and laser pulse generation circuit；
Described drive circuit connects respectively at described isolation circuit and laser pulse generation circuit；
Described isolation circuit includes that model is TLP2355 chip；Described model is the 1 of TLP2355 chip
Pin connects the positive pole of pulse signal by resistance R1；3rd pin connects the negative pole of pulse signal；4th
Pin ground connection；6th pin connects VCC power supply；It is TLP2355 that one end of electric capacity C1 is connected to described model
6th pin of chip；The other end ground connection of described electric capacity C1；
Described drive circuit includes that model is MAX5048C chip；Described model is the IN+ of MAX5048C chip
End is connected to, by resistance R3, the 5th pin that described model is TLP2355 chip；Described model is
The IN-end ground connection of MAX5048C chip, and one end ground connection of resistance R4, the other end is connected to described model and is
The IN+ pin of MAX5048C chip；Described model is the GND pin ground connection of MAX5048C chip, described type
Number it is that the V+ pin of MAX5048C chip connects VCC power supply；One end of electric capacity C2 is connected to described model
The V+ end of MAX5048C chip, the other end ground connection of electric capacity C2；Described model is MAX5048C chip
P_OUT pin and N_OUT pin connect；
Described laser pulse generation circuit includes field effect transistor Q1, diode D1 and semiconductor laser D2；
Described model is the P_OUT pin of MAX5048C chip and is connected to described field effect transistor Q1 by resistance R5
G end；The D end of described field effect transistor Q1 is connected to the power supply of+200V by resistance R7；Described field is imitated
Should the S end ground connection of pipe；The negative pole end of electric capacity C4 and electric capacity C5 ground connection respectively simultaneously；Described electric capacity C4 and electricity
Hold C5 positive terminal to link together, and be connected to+200V power supply；The minus earth of described diode D1,
The positive pole of described semiconductor laser D2 passes through resistance R8 ground connection；The positive pole of described diode D1 and described half
The negative pole of conductor laser D2 connects, and is connected to one end of electric capacity C3, and the other end of described electric capacity C3 is even
It is connected to the D end of described field effect transistor Q1.
This utility model has the advantages that the laser for anti-collision system for automobile of the present utility model surpasses
Short pulse generation device, its pulse signal can be sent by single-chip microcomputer, through isolation and driving, controls
Turning on and off of field effect transistor Q1, and then control the luminescence of semiconductor laser D2.Reduce electric capacity C3
Capacitance, reduce the resistance of resistance R8 simultaneously, and then realize ultrashort laser pulse.
Accompanying drawing explanation
Fig. 1 is that the module of the ultrashort laser pulse generating means for anti-collision system for automobile of the present utility model connects
Connect relation schematic diagram；
Fig. 2 is that the circuit of the ultrashort laser pulse generating means for anti-collision system for automobile of the present utility model connects
Connect relation schematic diagram；
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the technical solution of the utility model is further elaborated.
Embodiment 1
Present embodiments providing a kind of ultrashort laser pulse generating means for anti-collision system for automobile, it includes
Isolation circuit, drive circuit and laser pulse generation circuit.
Described isolation circuit uses model to be TLP2355 chip, i.e. high speed photo coupling device；Described TLP2355 core
1st pin of sheet connects the positive pole (outer triggering signal positive pole) of pulse signal by resistance R1；It is the 3rd years old
Pin connects the negative pole of pulse signal；Its 4th pin ground connection；Its 6th pin connects VCC power supply；Electric capacity
One end of C1 is connected to the 6th pin of described TLP2355 chip；The other end ground connection of described electric capacity C1.
Described drive circuit uses model to be MAX5048C chip, i.e. a kind of mosfet driver, described
The IN+ end of MAX5048C chip is connected to the 5th pin of described TLP2355 chip by resistance R3；Described
The IN-end ground connection of MAX5048C chip, and one end ground connection of resistance R4, the other end is connected to described
The IN+ pin of MAX5048C chip；The GND pin ground connection of described MAX5048C chip, described MAX5048C
The V+ pin of chip connects VCC power supply；One end of electric capacity C2 is connected to the V+ of described MAX5048C chip
End, the other end ground connection of electric capacity C2；The P_OUT pin of described MAX5048C chip and N_OUT pin are even
Connect.
Described drive circuit is connected with described laser pulse generation circuit, thus in the driving of described drive circuit
Under, produce laser pulse；Specifically, described laser pulse generation circuit include field effect transistor Q1 (MOSEFT),
Diode D1 and semiconductor laser D2；The P_OUT pipe of described drive circuit (MAX5048C chip)
Foot and the G end (grid) being connected to described field effect transistor Q1 by resistance R5；Described field effect transistor Q1
D end (drain electrode) is connected to the power supply of+200V by resistance R7；The S end (source class) of described field effect transistor
Ground connection；One end (negative pole end) of the most described electric capacity C4 and C5 ground connection respectively；The other end (positive terminal)
Link together, and be connected to+200V power supply；So that electric capacity C4 and electric capacity C5 forms high input voltage electricity
The filter capacitor in source；The minus earth of described diode D1, the positive pole of described semiconductor laser D2 passes through
Resistance R8 ground connection；The positive pole of described diode D1 is connected with the negative pole of described semiconductor laser D2, and even
Being connected to one end of electric capacity C3, the other end of described electric capacity C3 is connected to the D end of described field effect transistor Q1.
Principle of the present utility model is: after having been connected by whole circuit, connects+200V high voltage power supply and VCC
The power supply of (+12V)；TRIGER+ and TRIGER-is the input of pulse signal, the pulse letter of the present embodiment
Number being 10ns, the square-wave signal of 20KHz, pulse signal is through isolation circuit (TLP2355 high speed photo coupling device)
Isolation, signal isolation can reduce rear end and seal in noise, affect the quality of pulse signal.Resistance R2 and electric capacity
C1 forms low-pass filtering, can reduce noise after VCC plant-grid connection after filtering.Resistance R3 plays metering function.
The effect of resistance R4 is the delay reducing trailing edge.
The signal of IN+ and IN-of MAX5048C chip is the signal that pulse signal processes through TLP2355,
The effect of MAX5048C chip is to drive turning on and off of field effect transistor Q1 (MOSEFT) through resistance R5,
And scene effect pipe open instantaneous, it can provide the grid source electrode that sufficiently large charging current makes field effect transistor
Between voltage rapidly rise to desirable value, it is ensured that field effect transistor Q1 can quickly open and not exist the high frequency of rising edge
Vibration, during the conducting of field effect transistor Q1, driver is provided that a path the most low-impedance is for MOSFET
Quickly releasing of grid source capacitance voltage, ensures that field effect transistor Q1 can rapidly switch off；Resistance R6 and electric capacity
C2 forms low-pass filtering, can reduce noise after VCC plant-grid connection after filtering.
In the present embodiment, MAX5048C chip is superfast MOSFET driving chip, when turning on and off
Between very fast, reach 4ns.
In the present embodiment, resistance R7 is charging current limiter resistance, and resistance R8 is pulse current current-limiting resistance, electricity
Appearance C3 is storage capacitor, and+200V power supply is input HVB high voltage bias；Diode D1 is clamp diode；D2
For semiconductor laser, field effect transistor Q1 is for controlling switch.
When field effect transistor Q1 disconnects ,+200V HVB high voltage bias is charged to storage capacitor C3 by resistance R7,
The voltage at electric capacity C3 two ends raises immediately, and after charging complete, the voltage UC at storage capacitor two ends is and high pressure
Bias voltage+200V is equal, and after field effect transistor Q1 closes, storage capacitor C3 passes through field effect transistor Q1, puts
The loop instantaneous discharge that electricity current-limiting resistance R8 and semiconductor laser D2 is formed, is added in semiconductor laser
The voltage at device D2 two ends is-200V.
Ultrashort laser pulse for anti-collision system for automobile of the present utility model encodes generator principle: will
After foregoing circuit connects, connect+200V high voltage power supply and VCC power supply (+12V)；Now pulse signal TRIGER+
With the output that TRIGER-controls laser by drive circuit；Visible of the present utility model for automobile collision preventing
The ultrashort laser pulse generating means of system uses electronic devices and components to realize Laser emission, and its response speed is fast；
And element that this utility model is used is less, therefore, stability is higher.
In the present embodiment, described laser pulse generation circuit by change bias voltage, resistance R7, electric capacity C3,
The size of resistance R8 parameter, the i.e. peak power of scalable output laser pulse, pulse width and repetition rate.
Bias voltage is the highest, and (energy storage) electric capacity C3 is the biggest, electric discharge current-limiting resistance R8 resistance is the least, then export swashs
Light peak power is the biggest；If (energy storage) electric capacity C3 resistance the least, resistance R8 is the least, then laser arteries and veins
The width of punching is the narrowest；The resistance of resistance R7 is the least, then the repetition rate of laser pulse is the highest.
The present embodiment is accomplished that ultrashort laser pulse, and its pulse signal can be sent by single-chip microcomputer, passes through
Isolation and driving, control turning on and off of field effect transistor Q1, and then control semiconductor laser D2's
Luminous.Reduce the capacitance of electric capacity C3, reduce the resistance of resistance R8 simultaneously, and then realize ultrashort laser pulse.
The sequencing of above example only for ease of describing, does not represent the quality of embodiment.
Last it is noted that above example is only in order to illustrate the technical solution of the utility model, rather than right
It limits；Although this utility model being described in detail with reference to previous embodiment, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or wherein portion of techniques feature is carried out equivalent；And these amendments or replacement, do not make corresponding skill
The essence of art scheme departs from the spirit and scope of this utility model each embodiment technical scheme.
Claims (1)
1. the ultrashort laser pulse generating means for anti-collision system for automobile, it is characterised in that include every
From circuit, drive circuit and laser pulse generation circuit；
Described drive circuit connects respectively at described isolation circuit and laser pulse generation circuit；
Described isolation circuit includes that model is TLP2355 chip；Described model is the 1 of TLP2355 chip
Pin connects the positive pole of pulse signal by resistance R1；3rd pin connects the negative pole of pulse signal；4th
Pin ground connection；6th pin connects VCC power supply；It is TLP2355 that one end of electric capacity C1 is connected to described model
6th pin of chip；The other end ground connection of described electric capacity C1；
Described drive circuit includes that model is MAX5048C chip；Described model is the IN+ of MAX5048C chip
End is connected to, by resistance R3, the 5th pin that described model is TLP2355 chip；Described model is
The IN-end ground connection of MAX5048C chip, and one end ground connection of resistance R4, the other end is connected to described model and is
The IN+ pin of MAX5048C chip；Described model is the GND pin ground connection of MAX5048C chip, described type
Number it is that the V+ pin of MAX5048C chip connects VCC power supply；One end of electric capacity C2 is connected to described model
The V+ end of MAX5048C chip, the other end ground connection of electric capacity C2；Described model is MAX5048C chip
P_OUT pin and N_OUT pin connect；
Described laser pulse generation circuit includes field effect transistor Q1, diode D1 and semiconductor laser D2；
Described model is the P_OUT pin of MAX5048C chip and is connected to described field effect transistor Q1 by resistance R5
G end；The D end of described field effect transistor Q1 is connected to the power supply of+200V by resistance R7；Described field is imitated
Should the S end ground connection of pipe；The negative pole end of electric capacity C4 and electric capacity C5 ground connection respectively simultaneously；Described electric capacity C4 and electricity
Hold C5 positive terminal to link together, and be connected to+200V power supply；The minus earth of described diode D1,
The positive pole of described semiconductor laser D2 passes through resistance R8 ground connection；The positive pole of described diode D1 and described half
The negative pole of conductor laser D2 connects, and is connected to one end of electric capacity C3, and the other end of described electric capacity C3 is even
It is connected to the D end of described field effect transistor Q1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620066135.2U CN205752971U (en) | 2016-01-22 | 2016-01-22 | Ultrashort laser pulse generating means for anti-collision system for automobile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620066135.2U CN205752971U (en) | 2016-01-22 | 2016-01-22 | Ultrashort laser pulse generating means for anti-collision system for automobile |
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| Publication Number | Publication Date |
|---|---|
| CN205752971U true CN205752971U (en) | 2016-11-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620066135.2U Expired - Fee Related CN205752971U (en) | 2016-01-22 | 2016-01-22 | Ultrashort laser pulse generating means for anti-collision system for automobile |
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| CN (1) | CN205752971U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
-
2016
- 2016-01-22 CN CN201620066135.2U patent/CN205752971U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 |