CN1440070A - Method for combination of self alignment contact procedure with self aligned silicon compound procedure - Google Patents
Method for combination of self alignment contact procedure with self aligned silicon compound procedure Download PDFInfo
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Abstract
This invention discloses a method combining the self-aligned contact process and the self-aligned silicide process. The method comprises the following steps: providing a semiconductor substrate the surface of which defines an internal memory area and a border area with the internal memory area and the border area containing respectively a plurality of doped gate and source/drain electrodes areas first; then removing the gate electrode using etching by a predetermined gate level; next performing a self-aligned metal silicide process to form a metal silicide on the surfaces of the gate electrodes and the source/drain areas in the border; then forming a covering layer for the gate electrodes on the metal silicide on the surface of the gate electrodes and covering at least one interlayer dielectric layer on the semiconductor substrate.
Description
Technical field
The present invention relates to a kind of method for making semiconductor, particularly relate to a kind of method in conjunction with self-aligned contact procedure and self-aligned silicide processing procedure.
Background technology
In the integrated circuit package manufacture process, self-aligned contact (self-aligned contact, SAC) processing procedure is widely used for defining and is shortened the spacing of adjacent gate, to reach the purpose of dwindling chip size, especially be applied in the making of internal memory product (as: trench formula DRAM, stacking-type DRAM, FLASH internal memory).And the silicide of aligning voluntarily (salicide) processing procedure that logic (Logic) processing procedure widely uses, its method is a depositing metal layers and metal level heat-treated on silicon layer, make silicon and metal reaction form metal silicide, can be applicable on the surface of gate or source/drain, to reach the effect that reduces resistance value.As shown in Figure 1, the gate structure of general memory is made of a silicon nitride cap rock 1, a multi-crystal silicification metal (polycide) layer 2 and one doped polysilicon layer 3, and utilizes the SAC processing procedure can form a contact hole 4 between two gate structures.But, when this gate structure is applied in logic (logic) processing procedure, problems such as electrical performance reduces, PMOS surface channel can take place, existing solution is: only (periphery) carries out the metal silicide processing procedure in the surrounding zone, or avoids the SAC processing procedure.
For the making of embedding bury type (embeded) internal memory, need on same chip, make logical circuit and internal memory, and in order to reach preferable circuit performance and higher integration simultaneously, U.S. Pat 5,998, the method of a kind of bond silicide processing procedure and SAC processing procedure is proposed, to be applied to general logic processing procedure for No. 252.Please refer to Fig. 2 A to Fig. 2 F, it shows the manufacture method of existing embedding bury type internal memory.Shown in Fig. 2 A, the surf zone of semiconductor substrate 10 includes a plurality of oxide isolation regions 12, and is divided into a logic region 5 and a region of memory 7.On the surface, the semiconductor-based ends 10 of region of memory 7, include a plurality of gate structures 22 and multiple source/drain area 24.Each gate structure 22 is made of a gate insulation layer 14, a polysilicon layer 16, one silica layer 18 and a silicon nitride cap rock 20, and includes silicon nitride sidewall 26 and be covered on the sidewall of gate structure 22.On the surface, the semiconductor-based ends 10 of logic region 5, then include a plurality of gate structures 28 and multiple source/drain area 30.Each gate structure 28 is made of a gate insulation layer 14 and a polysilicon layer 16, and includes silicon nitride sidewall 26 and be covered on the sidewall of gate structure 28.
Shown in Fig. 2 B and Fig. 2 C; go up formation one protective layer 32 prior to surface, the whole semiconductor-based ends 10; again in 10 surface coverage, one photoresist layer 34 of the semiconductor-based end of region of memory 7; so that protective layer 32 etchings of logic region 5 are removed, and then make gate structure 28 and source/drain area 30 surfaces expose to the open air out.Then, shown in Fig. 2 D and Fig. 2 E, after photoresist layer 34 removals, go up sputter one by metal level 36 that titanium or titanium nitride constituted prior to surface, the whole semiconductor-based ends 10, utilize rapid thermal annealing (rapid thermal anneal again, RTA) processing procedure forms a metal silicide 38 with metal level 36 and the pasc reaction that contacts to go up with source/drain area 30 surfaces in gate structure 28.Thereafter after the metal level 36 of unreacted being removed, the just metal silicide processing procedure of completion logic circuit region 5.
Next to carry out the SAC processing procedure to memory field 7; shown in Fig. 2 F; prior to form an interlayer dielectric layer 37 at semiconductor-based the end 10, be used in etch process again interlayer dielectric layer between the gate structure 22 37 and protective layer 32 are removed, to form a contact hole 39 that exposes source/drain area 24 surfaces.
Yet above-mentioned method only is applied to the metal silicide processing procedure on the gate structure 28 and source/drain area 30 surfaces of logic circuit area 5, and can't go up the formation metal silicides in polysilicon layer 16 surfaces of region of memory 7 simultaneously.
Summary of the invention
Technical problem to be solved by this invention is to propose a kind of method in conjunction with self-aligned contact procedure and self-aligned silicide processing procedure, on the gate structure that this method can not only be applied to the metal silicide processing procedure logic circuit area and the source/drain area surface and also the energy while on the polysilicon layer surface of region of memory, form metal silicide.
To achieve these goals, the present invention proposes a kind of method in conjunction with self-aligned contact procedure and self-aligned silicide processing procedure, comprise the following steps: at first to provide the semiconductor substrate, its surface is defined as a memory field and a surrounding zone, and this memory field and this surrounding zone include the gate and the source/drain area of a plurality of doping respectively; Then, form an oxide layer to cover this gate surface, on this gate sidewalls, form sidewall again at this semiconductor-based basal surface; Subsequently, form a barrier layer and a resilient coating at this semiconductor-based basal surface in regular turn, with the space between two gates that fill up the memory field; Then, the barrier layer at this gate top and resilient coating are removed,, and make the oxide layer of the semiconductor-based basal surface of this surrounding zone expose to the open air out simultaneously so that the oxide layer at this gate top exposes to the open air out; Thereafter, this oxide layer that exposes to the open air and this gate are removed in etching in regular turn, until a predetermined gate height; And then, carry out self-aligned metal silicide (salicide) processing procedure, so that on the source/drain area surface of this gate surface and this surrounding zone, form a metal silicide; Then, on the metal silicide on this gate surface, form a gate cover layer, on this semiconductor-based basal surface, cover at least one interlayer dielectric layer again; Carry out the etch process of self-aligned contact (seif-aligned contact) at last, with the interlayer dielectric layer between two gates of this memory field, resilient coating, barrier layer, oxide layer to remove with the gate pole insulating barrier, make the source/drain area surface between two gates of this memory field expose to the open air out, to form a contact hole.
Description of drawings
Fig. 1 shows the gate structure of existing internal memory.
Fig. 2 A, 2B, 2C, 2D, 2E, 2F show the manufacture method of existing embedding bury type internal memory.
Fig. 3 A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K show embedding bury type internal memory manufacture method of the present invention.
Fig. 4 A, 4B, 4C, 4D, 4E show improvement method of the present invention.
Embodiment
In Fig. 1, the gate of existing internal memory comprises silicon nitride cap rock 1, multi-crystal silicification metal level 2, doped polysilicon layer 3.In Fig. 2 A, 2B, 2C, 2D, 2E, 2F, in existing embedding bury type internal memory, comprise: contact hole 4, logic region 5, region of memory 7, the semiconductor-based end 10, an oxide isolation regions 12, utmost point insulating barrier 14, polysilicon layer 16, silicon oxide layer 18, silicon nitride cap rock 20, gate structure 22, source/drain area 24, silicon nitride sidewall 26, gate structure 28, source/drain area 30, protective layer 32, photoresist layer 34, metal level 36, metal silicide 38, interlayer dielectric layer 37.
At Fig. 3 A to 3K, and in Fig. 4 A to Fig. 4 E, embedding bury type internal memory of the present invention comprises: memory field 6, surrounding zone 8, the semiconductor-based end 40, gate insulation layer 42, gate 44, first gate 441, second gate 442, oxide layer 46, oxide layer sidewall 47, sidewall 48, silicon nitride sidewall 49, source/drain area 50, barrier layer 52, resilient coating 54, metal silicide 56, gate cover layer 58, first interlayer dielectric layer 601, second interlayer dielectric layer 602, the 3rd interlayer dielectric layer 603, contact hole 62, first conductive layer 64, second conductive layer 66, first dielectric layer 68, second dielectric layer 70, the 3rd dielectric layer 72.
Embodiment
In Fig. 3 A to Fig. 3 K, it shows the manufacture method of embedding bury type internal memory of the present invention.The inventive method combines metal silicide processing procedure and SAC processing procedure, is mainly used in the making of embedding bury type internal memory, below the production method of explanation trench formula DRAM.As shown in Figure 3A, semiconductor substrate 40 surfaces are defined as a memory field 6 and a surrounding zone (periphery) 8.The semiconductor-based end 40, include a gate insulation layer 42, a plurality of gates 44 that are made of doped polycrystalline silicon (doped) are formed at gate insulation layer 42 surfaces, one oxide layer 46 covers gate insulation layer 42 and gate 44 surfaces, one covers the sidewall of gate 44 by sidewall 48 that silicon nitride or silica constituted, and multiple source/drain area 50 is formed on the surface, the semiconductor-based ends 40 around the gate 44.
Shown in Fig. 3 B and Fig. 3 C, go up prior to surface, the semiconductor-based ends 40 and to cover one by the barrier layer 52 that silicon nitride constituted, again in the barrier layer 52 surface coverage one by resilient coating 54 that silica constituted.Carry out an etch-back processing procedure subsequently, utilize barrier layer 52 to stop layer, the resilient coating 54 of part is removed, so that 52 surfaces, barrier layer at gate 44 tops expose to the open air out as etching.Then, shown in Fig. 3 D figure, stop layer with oxide layer 46 as etching, remove on the barrier layer 52 that will be positioned at gate 44 tops, simultaneously the barrier layer 52 on source/drain area 50 surfaces of surrounding zone 8 is removed.
Next, shown in Fig. 3 E, earlier the oxide layer that exposes to the open air 46 etchings on surface, the semiconductor-based ends 40 are removed, again gate 44 etchings are removed to a predetermined altitude (being lower than the height of sidewall 48 at least), carry out the metal silicide processing procedure then, to go up formation one metal silicide 56 respectively at the surface of gate 44 and source/drain area 50 surfaces of surrounding zone 8.The metal silicide processing procedure forms one by the metal level (not shown) that titanium or tungsten constituted prior to surface, the semiconductor-based ends 40, heat-treats so that metal level and pasc reaction form TiSi again
xOr WSi
x Metal silicide 56, at last the unreacted metal layer is removed.Thus, gate 44 is combined into a multi-crystal silicification thing metal (polycide) layer with metal silicide 56.And destroy the profile of multi-crystal silicification thing metal level for fear of follow-up contact hole etch process, need to utilize deposition, etch-back processing procedure on multi-crystal silicification thing metal level, to cover one, shown in Fig. 3 F by the gate cover layer 58 that silicon nitride constituted.
Next, be in the memory field 6 carry out the SAC processing procedure, between two gate structures, to make contact plunger.Shown in Fig. 3 G and 3H, on the semiconductor-based end 40, form one first interlayer dielectric layer 601, one second interlayer dielectric layer 602, one the 3rd interlayer dielectric layer 603 earlier in regular turn, and (chemical mechanical polish, CMP) processing procedure is with its flattening surface to utilize cmp.And then, shown in Fig. 3 I, utilize one photoresistance (not shown) to define the position in a contact hole 62, and a dry ecthing procedure is carried out in the position in contact hole 62, utilize barrier layer 52 to stop layer the resilient coating between two gates 44 54 is removed as etching.Again the most of barrier layer between two gates 44 52 is removed subsequently, until exposing oxide layer 46, shown in Fig. 3 J.The oxide layer 46 that will contact 62 bottoms, hole is thereafter removed fully with gate insulation layer 42, so that source/drain area 50 surfaces of memory field 6 expose to the open air out, just finishes the making in contact hole 62.At last, shown in Fig. 3 K, in contact hole 62, insert one first conductive layer 64, form one second conductive layer 66 as a bit line (bit line) in conductive layer 64 surfaces again as a contact plunger.
According to as can be known above-mentioned, the inventive method bond silicide processing procedure and SAC processing procedure, can be simultaneously on source/drain area 50 surfaces of gate 44 surfaces of memory field 6 and surrounding zone 8 and surrounding zone 8, form metal silicide 56, therefore can reach preferable circuit performance and higher integration simultaneously.
In addition, the inventive method also can be by improving part steps, to reach better process quality.First kind of improvement mode: shown in Fig. 4 A, it is the gate structure that the gate 44 shown in Fig. 3 A is made into storehouse, height by control grid 44 can be separated into gate 44 one first gate 441 and one second gate 442, and one first dielectric layer 68 is inserted in wherein.If first dielectric layer 66 is designed to the ONO structure, then become a kind of gate structure of FLASH internal memory, and first gate 441 can be considered the gate of floating (floating gate).Hence one can see that, and the inventive method can also be applied in the making of FLASH internal memory, and its method need be utilized the multiple tracks light shield, with the pattern of the doping of the gate of floating, definition ONO structure, make doping of second gate 442 and source/drain area 50 or the like.In addition, sidewall 48 of gate structure is designed to the combination form of oxide layer sidewall 47 and one nitration case sidewall 49, can further improves electric leakage (leakage) problem, and prevent depression (pitting) problem of source/drain area 50.
Second kind of improvement mode: be before beginning etching gate 44 (shown in Fig. 3 D), the oxide layer 46 on surface is removed for fear of the semiconductor-based ends 40, and then surface, effective coverage (activeregion) is exposed to the open air in etching environment, therefore can form a cover layer prior to the top of gate 44.Shown in Fig. 4 B, cover one second dielectric layer 70 in the top of second gate 442, can prevent effectively that the oxide layer 46 on surface, the semiconductor-based ends 40 is removed, expose to the open air in etching environment to avoid the surface, effective coverage.
The third improvement method: after resilient coating 54 is carried out the etch-back processing procedure (shown in Fig. 3 C), described as second kind of improvement method, for fear of the etching oxide layer 46 of deficiency and cause the peeling phenomenon of source/drain, can be in the surrounding zone 8 additionally increase by one light shield, make follow-up after etching gate 44, gate 44 ' the height of surrounding zone 8 comes highly than the memory field, shown in Fig. 4 C.
The 4th kind of improvement method: the ion disposing process to gate 44 and source/drain area 50 are carried out, can also can just carry out ion disposing process in finishing (situation shown in 3A figure) at the beginning after proceeding to the step shown in the 3D figure.Thus, shown in 4D figure, can carry out ion disposing process to the effective coverage of gate 44 and surrounding zone 8 earlier, so that gate 44 forms the polysilicon that mixes, and in the surrounding zone formation source/drain area 50 ' around 8 the gate 44, the follow-up removal of oxide layer 46, the etching and the metal silicide processing procedure of gate 44 of just carrying out in regular turn.
The 5th kind of improvement method: (shown in Fig. 3 F) over etching metal silicide 56 during for fear of the etch-back processing procedure of gate cover layer 58, therefore can on metal silicide 56, form one the 3rd dielectric layer 72 earlier, carry out deposition, the etch-back processing procedure of gate cover layer 58 again, the result is shown in Fig. 4 E.
Foregoing only is a preferred embodiment of the present invention; be not to be used to limit technical scheme of the present invention; this area common technique personnel also can implement a plurality of technical schemes according to spirit of the present invention and technical characterstic; needn't give unnecessary details one by one at this, so the scope of protection of present invention is as the criterion with the scope of determining in claims.
Claims (20)
1. the method in conjunction with self-aligned contact procedure and self-aligned silicide processing procedure comprises the following steps:
The semiconductor substrate is provided, and its surface definition forms a memory field and a surrounding zone, and this memory field and this surrounding zone include the gate and the source/drain area of a plurality of doping respectively;
Form an oxide layer to cover this a plurality of gates surface in this semiconductor-based basal surface, on these a plurality of gate sidewalls, form sidewall again;
Form a barrier layer and a resilient coating in this semiconductor-based basal surface, with the space between two gates that fill up the memory field;
The barrier layer at this gate top and resilient coating are removed,, and make the oxide layer of the semiconductor-based basal surface of this surrounding zone expose to the open air out so that the oxide layer at this gate top exposes to the open air out;
This oxide layer that exposes to the open air and this gate are removed in etching, until a predetermined gate height;
Carry out self-aligned metal silicide (salicide) processing procedure, on the source/drain area surface of this gate surface and this surrounding zone, to form a metal silicide;
On the metal silicide on this gate surface, form a gate cover layer;
On this semiconductor-based basal surface, cover an interlayer dielectric layer; And
Carry out the etch process of self-aligned contact (self-aligned contact), the source between two gates of this memory field/drain area surface is exposed to the open air out, to form a contact hole.
2. the method for claim 1, it is characterized in that: this gate is a stacking-type gate structure, is formed by one first gate, a dielectric layer and one second gate institute storehouse.
3. method as claimed in claim 2 is characterized in that: this first gate is used as the gate of floating.
4. method as claimed in claim 2 is characterized in that: this dielectric layer is an ONO dielectric structure.
5. the method for claim 1 is characterized in that: the sub combination spacer structure that includes an one silica layer and a silicon nitride layer for one silica layer, a silicon nitride layer or of this sidewall.
6. the method for claim 1 is characterized in that: the method that the barrier layer and the resilient coating at this gate top are removed includes:
Utilize this barrier layer as etching stopping layer, this resilient coating is carried out an etch-back processing procedure; And
Utilize this oxide layer as etching stopping layer, the barrier layer at this gate top is removed,, and make the oxide layer of the semiconductor-based basal surface of this surrounding zone expose to the open air out simultaneously so that the oxide layer of this gate napex exposes to the open air out.
7. the method for claim 1, it is characterized in that: etching is removed before this oxide layer that exposes to the open air and this gate, can form a dielectric layer at this gate top earlier.
8. the method for claim 1, it is characterized in that: the method that this oxide layer that exposes to the open air and this gate are removed in etching includes:
Form a photoresist layer in this surrounding zone, to cover the oxide layer that exposes to the open air of this surrounding zone;
The oxide layer that exposes to the open air of this memory field is removed with the etching of part gate;
This photoresist layer of this surrounding zone is divested; And
The gate of this memory field and the oxide layer that exposes to the open air of this surrounding zone are removed with the etching of part gate, arrived until the gate that makes this memory field and be somebody's turn to do predetermined gate height;
Wherein the gate height of this memory field is less than the gate height of this surrounding zone.
9. the method for claim 1 is characterized in that: before forming this gate cover layer, and can be prior to forming a dielectric layer on this metal silicide.
10. the method for claim 1 is characterized in that: after the etch process that carries out this self-aligned contact, fill up a conductive layer in this contact hole, be used as a contact plunger.
11. the method in conjunction with self-aligned contact procedure and self-aligned silicide processing procedure comprises the following steps:
The semiconductor substrate is provided, and its surface is defined as a memory field and a surrounding zone, and this memory field includes a plurality of gates and source/drain area, and this surrounding zone includes a gate;
Form an oxide layer to cover this gate surface at this semiconductor-based basal surface, on this gate sidewalls, form sidewall again;
Form a barrier layer and a resilient coating at this semiconductor-based basal surface, with the space between two gates that fill up the memory field;
The barrier layer at this gate top and resilient coating are removed,, and make the oxide layer of the semiconductor-based basal surface of this surrounding zone expose to the open air out so that the oxide layer at this gate top exposes to the open air out;
An ion disposing process is carried out in effective coverage to this gate and this surrounding zone, to form one source/drain area around the gate of this surrounding zone;
Etching is removed this oxide layer that exposes to the open air and this gate until a predetermined altitude;
Carry out self-aligned metal silicide (salicide) processing procedure, on the semiconductor-based basal surface of this gate surface and this surrounding zone, to form a metal silicide;
On this metal silicide surface, form a gate cover layer;
On this semiconductor-based basal surface, cover an interlayer dielectric layer; And
Carry out the etch process of self-aligned contact (self-aligned contact), the source between two gates of this memory field/drain area surface is exposed to the open air out, to form a contact hole.
12. method as claimed in claim 11 is characterized in that: this gate is a stacking-type gate structure, is formed by one first gate, a dielectric layer and one second gate institute storehouse.
13. method as claimed in claim 12 is characterized in that: this first gate is used as the gate of floating.
14. method as claimed in claim 12 is characterized in that: this dielectric layer is an ONO dielectric structure.
15. method as claimed in claim 11 is characterized in that: this sidewall includes the combination spacer structure of an one silica layer and a silicon nitride layer for one silica layer, a silicon nitride layer or.
16. as claim 11 a described method, it is characterized in that: this method that the barrier layer and the resilient coating at this gate top are removed includes:
Utilize this barrier layer as etching stopping layer, this resilient coating is carried out an etch-back processing procedure; And
Utilize this oxide layer as etching stopping layer, the barrier layer at this gate top is removed,, and make the oxide layer of the semiconductor-based basal surface of this surrounding zone expose to the open air out simultaneously so that the oxide layer at this gate top exposes to the open air out.
17. method as claimed in claim 11 is characterized in that: before this oxide layer that exposes to the open air and this gate are removed in etching, can form a dielectric layer prior to this gate top.
18. method as claimed in claim 11 is characterized in that: the method that this oxide layer that exposes to the open air and this gate are removed in etching includes:
Form a photoresist layer in this surrounding zone, to cover the oxide layer that exposes to the open air of this surrounding zone;
The oxide layer that exposes to the open air of this memory field is removed with the etching of part gate;
The photoresist layer of this surrounding zone is divested; And
The gate of this memory field and the oxide layer that exposes to the open air of this surrounding zone are removed with the etching of part gate, arrived until the gate that makes this memory field and be somebody's turn to do predetermined gate height;
Wherein the gate height of this memory field is less than the gate height of this surrounding zone.
19. method as claimed in claim 11 is characterized in that: before forming this this step of gate cover layer, can on this metal silicide, form a dielectric layer earlier.
20. method as claimed in claim 11 is characterized in that: after the etch process that carries out this self-aligned contact, in this contact hole, fill up a conductive layer, be used as a contact plunger.
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| CNB021053219A CN1191624C (en) | 2002-02-22 | 2002-02-22 | Method for combination of self alignment contact procedure with self aligned silicon compound procedure |
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| CNB021053219A CN1191624C (en) | 2002-02-22 | 2002-02-22 | Method for combination of self alignment contact procedure with self aligned silicon compound procedure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541271B2 (en) | 2005-01-24 | 2009-06-02 | Macronix International Co., Ltd. | MOS transistors having low-resistance salicide gates and a self-aligned contact between them and method of manufacture |
| CN101009246B (en) * | 2006-01-26 | 2010-06-09 | 旺宏电子股份有限公司 | Metal semiconductor transistor and self-aligning contact method |
| CN103094088A (en) * | 2011-11-08 | 2013-05-08 | 上海华虹Nec电子有限公司 | Technique for improving radio frequency (RF) lateral double-diffused metal-oxide semiconductor (LDMOS) grid electrode metal silicide forming |
| CN103137464A (en) * | 2011-11-30 | 2013-06-05 | 上海华虹Nec电子有限公司 | Source leakage polycrystalline silicon autoregistration dry etching method |
| CN108122834A (en) * | 2017-12-13 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | A kind of method that tungsten lacks in improvement contact hole |
| CN109273445A (en) * | 2017-07-18 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor devices and preparation method thereof, electronic device |
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2002
- 2002-02-22 CN CNB021053219A patent/CN1191624C/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541271B2 (en) | 2005-01-24 | 2009-06-02 | Macronix International Co., Ltd. | MOS transistors having low-resistance salicide gates and a self-aligned contact between them and method of manufacture |
| US7605414B2 (en) | 2005-01-24 | 2009-10-20 | Macronix International Co., Ltd. | MOS transistors having low-resistance salicide gates and a self-aligned contact between them |
| CN101009246B (en) * | 2006-01-26 | 2010-06-09 | 旺宏电子股份有限公司 | Metal semiconductor transistor and self-aligning contact method |
| CN103094088A (en) * | 2011-11-08 | 2013-05-08 | 上海华虹Nec电子有限公司 | Technique for improving radio frequency (RF) lateral double-diffused metal-oxide semiconductor (LDMOS) grid electrode metal silicide forming |
| CN103094088B (en) * | 2011-11-08 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | Improve the process that RF LDMOS grid electrode metal silicide is formed |
| CN103137464A (en) * | 2011-11-30 | 2013-06-05 | 上海华虹Nec电子有限公司 | Source leakage polycrystalline silicon autoregistration dry etching method |
| CN103137464B (en) * | 2011-11-30 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | Source and drain polysilicon autoregistration dry etching method |
| CN109273445A (en) * | 2017-07-18 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor devices and preparation method thereof, electronic device |
| CN109273445B (en) * | 2017-07-18 | 2020-10-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN108122834A (en) * | 2017-12-13 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | A kind of method that tungsten lacks in improvement contact hole |
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| Publication number | Publication date |
|---|---|
| CN1191624C (en) | 2005-03-02 |
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