CN1439900A - Laser protective film and production thereof - Google Patents
Laser protective film and production thereof Download PDFInfo
- Publication number
- CN1439900A CN1439900A CN01133732A CN01133732A CN1439900A CN 1439900 A CN1439900 A CN 1439900A CN 01133732 A CN01133732 A CN 01133732A CN 01133732 A CN01133732 A CN 01133732A CN 1439900 A CN1439900 A CN 1439900A
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- membranous layer
- oxide
- sub
- ion beam
- protective film
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Abstract
A laser protective film includes substrate, film layer of oxide (H) and film layer of silicon oxide (L) as its film coefficient is of Sub/(HL)pH 0.5L/Air. Which can carry on high reflection for the laser with wavelength range of 1.06 um and 1.315 um, but high transmission for the light with the other wavelength range so that it can protect optical transducer in satellite from the damage by the laser weapon with wavelength of 1.06 um and 1.315 um. The fabrication method of the film includes relative technologies of electronic beam evaporating, ion beam sputtering or ion beam assisting.
Description
The present invention relates to a kind of laser protective film and preparation method thereof.
Satellite, space weapon etc. often are subjected to the impact of laser, and optical sensor wherein is usually because not protection and not being passed through by laser-transmitting causes its performance influenced, and cisco unity malfunction is when serious even be damaged.
In the prior art, laser protective film is generally in industrial application, and its defective is to reflect YAG laser instrument, CO
2Therefore the 1.06 μ m that laser instrument sends and the laser of 10.6 mum wavelengths can not be used for protecting the optical sensor of satellite.
The object of the present invention is to provide a kind of laser that can reflect 1.06 μ m and 1.315 mum wavelengths, avoid the affected laser protective film of optical sensor in the satellite.
Purpose of the present invention can realize by following technical measures: the laser to 1.06 μ m and 1.315 mum wavelength scopes carries out high reflection, to the then high laser protective film that sees through of other wavelength coverage light, its film system is made up of substrate (Sub), oxide membranous layer (H), membranous layer of silicon oxide (L), and film structure is: Sub/ (HL)
PH0.5L/Air; Wherein, oxide membranous layer/membranous layer of silicon oxide ((HL)
P) logarithm P=9～15; The thickness of oxide membranous layer (H) is λ/4 (λ is optical maser wavelength=1.315 μ m, down together); The thickness of membranous layer of silicon oxide (L) is λ/4, Air---air.
Purpose of the present invention also can realize by following technical measures: in the film structure of laser protective film, the material of substrate (Sub) is quartz glass, optical glass or monocrystalline; The film based material is a combination of oxides, and promptly oxide/monox (HL) can be titanium dioxide/monox (TiO
2/ SiO
2), also can be tantalum oxide/monox (Ta
2O
5/ SiO
2), can also be hafnia/monox (HfO
2/ SiO
2) etc.
Purpose of the present invention also can realize by following technical measures: the method for making of laser protective film is finished by following steps:
1., substrate (Sub) is heated to 80 ℃～300 ℃;
2., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted on substrate (Sub)
The oxide membranous layer (H) of (λ is optical maser wavelength=1.315 μ m, and is together following) of plating λ/4 thickness;
3., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at oxide membranous layer (H)
The membranous layer of silicon oxide (L) of last plating λ/4 thickness;
4., repeat the 2.～3. step, go up plating P to (P=9～5) oxide membranous layer at substrate (Sub)
/ membranous layer of silicon oxide ((HL)
P);
5., by technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at P to oxide
Rete/membranous layer of silicon oxide ((HL)
P) membranous layer of silicon oxide (L) oxidation of going up plating λ/4 thickness
Thing rete (H);
6., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at oxide membranous layer (H)
The membranous layer of silicon oxide (0.5L) of last plating λ/8 thickness is finished the lasing safety membrane system
(Sub/ (HL)
PH0.5L/Air) making.
The present invention compared with prior art has following advantage: laser protective film of the present invention can reflect the laser of 1.06 μ m and 1.315 mum wavelengths; therefore on the satellite window, use; can carry out the height reflection to the 1.06 μ m of attack satellite and the laser of 1.315 mum wavelengths; and allow the light of other wavelength see through; the atmospheric window that formation is favourable to satellite sensor work, protection satellite sensor operate as normal.
Description of drawings:
Fig. 1 is the structural representation of the laser protective film of the embodiment of the invention one.
Fig. 2 is the process chart of the laser protective film method for making of embodiment one.
Fig. 3 is 1.315 μ m laser protective film spectral transmission curve of the embodiment of the invention one.
Fig. 4 is 1.060 μ m laser protective film spectral transmission curve of the embodiment of the invention one.
Fig. 5 is the structural representation of embodiment of the invention dual-laser protective film.
Fig. 6 is the process chart that embodiment two makes laser protective film.
Fig. 7 is 1.315 μ m laser protective film spectral transmission curve of the embodiment of the invention two.
Fig. 8 is 1.060 μ m laser protective film spectral transmission curve of the embodiment of the invention two.
Fig. 9 is the structural representation of the embodiment of the invention three laser protective films.
Figure 10 is the process chart of embodiment three laser protective film method for makings.
Figure 11 is 1.315 μ m laser protective film spectral transmission curve of the embodiment of the invention three.
Figure 12 is 1.060 μ m laser protective film spectral transmission curve of the embodiment of the invention three.
The invention will be further described below in conjunction with drawings and Examples.
The laser protective film of embodiment one is by substrate (Sub) 1, titanium dioxide (TiO
2) rete (H) 2, monox (SiO
2) rete (L) 3 compositions.Its film is: Sub/ (HL)
PH0.5L/Air, as shown in Figure 1.Wherein, the material of substrate (Sub) 1 is a quartz glass.On the substrate (Sub) 1 titanium dioxide (the TiO of λ/4 thickness
2) rete (H) 2; On it monox (SiO of λ/4 thickness
2) rete (L) 3; Monox (SiO
2) be again titanium dioxide (TiO on the rete (L) 3
2) rete (H) 2; Be to have 9 couples of titanium dioxide/monox (TiO on the substrate (Sub) 1
2/ SiO
2) ((H/L)
P).The 9th couple of titanium dioxide/monox (TiO
2/ SiO
2) ((HL)
P) silicon oxide sio
2Above the rete (L) 4 titanium dioxide (the TiO of λ/4 thickness
2) rete (H) 5, on it monox (SiO of λ/8 thickness
2) rete (0.5L) 6.Fig. 3 is 1.315 μ m laser protective film spectral transmission curve figure of the embodiment of the invention one, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.1 μ m; Ordinate is represented transmissivity, unit scale: 20%.Fig. 4 is 1.060 μ m laser protective film spectral transmission curve, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.2 μ m; Ordinate is represented transmissivity, unit scale: 20%.
As shown in Figure 2, embodiment one laser protective film manufacturing process is as follows:
1., heated substrate (Sub) is 1 to 300 °;
2., on substrate (Sub) 1, plate titanium dioxide (TiO by electron beam evaporation process
2) rete (H)
2, its thickness is λ/4;
3., by electron beam evaporation process at titanium dioxide (TiO
2) plate monox (SiO on the rete (H) 2
2)
Rete (L) 3, its thickness are λ/4;
4., repeat the 2.～3. step, until titanium dioxide/monox (TiO
2/ SiO)
P((HL)
P) right
Number P=9;
5., by electron beam evaporation process at the 9th couple of titanium dioxide/monox (TiO
2/ SiO
2) ((HL)
P)
Monox (SiO
2) plate the titanium dioxide (TiO of λ/4 thickness on the rete (L) 4
2) rete (H)
5；
6., by electron beam evaporation process at titanium dioxide (TiO
2) plate λ/8 thickness on the rete (H) 5
Monox (SiO
2) rete (0.5L) 6, finish lasing safety membrane system (Sub/ (HL)
PH0.5L/Air) making.
The laser protective film of embodiment two comprises substrate (Sub) 7, tantalum oxide (Ta
2O
5) rete (H) 8, monox (SiO
2) rete (L) 9.Its film is: Sub/ (HL)
PH0.5L/Air, as shown in Figure 3.Wherein, the material of substrate (Sub) 7 is an optical glass; Air---air; P=12.Be the tantalum oxide (Ta of λ/4 thickness according to this on the substrate (Sub) 7
2O
5) monox (SiO of rete (H) 8, λ/4 thickness
2) rete (L) 9, P be to titanium dioxide/monox (TiO of (P=11)
2/ SiO
2) ((H/L)
P) 13.The 12nd couple of titanium dioxide/monox (TiO
2/ SiO
2) ((H/L)
P) monox (SiO
2) above the rete (L) 10 tantalum oxide (the Ta of λ/4 thickness
2O
5) rete (H) 11, on it monox (SiO of λ/8 thickness
2) rete (0.5L) 12.Fig. 7 is 1.315 μ m laser protective film spectral transmission curve figure of the embodiment of the invention one, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.1 μ m; Ordinate is represented transmissivity, unit scale: 20%.Fig. 8 is 1.060 μ m laser protective film spectral transmission curve, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.2 μ m; Ordinate is represented transmissivity, unit scale: 20%.
As shown in Figure 4, the laser protective film manufacturing process of embodiment two is as follows:
1., substrate (Sub) 7 is heated to 80 ℃;
2., on substrate (Sub) 7, plate tantalum oxide (Ta by ion beam sputtering process
2O
5) rete (H)
8, its thickness is λ/4;
3., by ion beam sputtering process at tantalum oxide (Ta
2O
5) plate monox (SiO on the rete (H) 8
2)
Rete (L) 9, its thickness are λ/4;
4., repeat the 2.～3. step, at monox (SiO
2) on the rete (L) 9 plating P to (P=11)
Tantalum oxide/monox (Ta
2O
5/ SiO
2) ((HL)
P) 13;
5., by ion beam sputtering process at the 12nd couple of titanium dioxide/monox (TiO
2/ SiO
2) ((HL)
P)
Monox (SiO
2) plate the tantalum oxide (Ta of λ/4 thickness on the rete (L) 10
2O
5) rete
(H)11；
6., by ion beam sputtering process at tantalum oxide (Ta
2O
5) to plate λ/8 on the rete (H) 11 thick
Monox (the SiO of degree
2) rete (0.5L) 12, finish the making of lasing safety membrane system.
The laser protective film of embodiment three is by substrate (Sub) 14, hafnia (HfO
2) rete 15, monox (SiO
2) rete 16 compositions.Its film is: Sub/ (H/L)
PH0.5L/Air, as shown in Figure 5.Wherein, the material of substrate (Sub) 13 is monocrystalline, Air---air, P=15.Be the hafnia (HfO of λ/4 thickness according to this on the substrate (Sub) 14
2) monox (SiO of rete (H) 15, λ/4 thickness
2) rete (L) 16, P be to hafnia/monox (HfO of (P=14)
2/ SiO
2) ((HL)
P) 20.At the 15th couple of hafnia/monox (HfO
2/ SiO
2) ((H/L)
P) monox (SiO
2) above the rete (L) 17 hafnia (the HfO of λ/4 thickness
2) rete (H) 18, on it monox (SiO of λ/8 thickness
2) rete (0.5L) 19.Figure 11 is 1.315 μ m laser protective film spectral transmission curve figure of the embodiment of the invention one, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.1 μ m; Ordinate is represented transmissivity, unit scale: 20%.Figure 12 is 1.060 μ m laser protective film spectral transmission curve, and among the figure, horizontal ordinate is represented optical maser wavelength, the unit scale: 0.2 μ m; Ordinate is represented transmissivity, unit scale: 20%.
As shown in Figure 6, embodiment three laser protective film manufacturing process are as follows:
1., heated substrate (Sub) is 14 to 300 ℃;
2., on substrate (Sub) 14, plate hafnia (HfO by ion beam-assisted technology
2) rete (H)
15, its thickness is λ/4;
3., pass through ion beam-assisted technology at hafnia (HfO
2) plate monox on the rete (H) 15
(SiO
2) rete (L) 16, its thickness is λ/4;
4., repeat the 2.～3. step, at monox (SiO
2) on the rete (L) 16 plating P to (P=14)
Hafnia/monox (HfO
2/ SiO
2) ((HL)
P) 20;
5., pass through ion beam-assisted technology at the 15th couple of hafnia/monox (HfO
2/ SiO
2) ((HL)
P) monox (SiO
2) plate the hafnia (HfO of λ/4 thickness on the rete (L) 17
2)
Rete (H) 18;
6., pass through ion beam-assisted technology at hafnia (HfO
2) plate λ/8 on the rete (H) 18
Monox (the SiO of thickness
2) rete (0.5L) 19, finish the lasing safety membrane system
Make.
Claims (3)
1, a kind of laser to 1.06 μ m and 1.315 mum wavelength scopes carry out high reflection, to the high saturating laser protective film of other wavelength coverage light, film system is made up of substrate (Sub) (1), oxide membranous layer (H) (2), membranous layer of silicon oxide (L) (3), and it is characterized in that: film structure is: Sub/ (HL)
PH0.5L/Air; Wherein, oxide membranous layer/membranous layer of silicon oxide ((HL)
P) logarithm P=9～15; The thickness of oxide membranous layer (H) (2) is λ/4 (λ is optical maser wavelength=1.315 μ m, down together); The thickness of membranous layer of silicon oxide (L) (3) is λ/4, Air---air.
2, laser protective film according to claim 1 is characterized in that: in the protective film film structure, the material of substrate (Sub) (1) is quartz glass, optical glass or monocrystalline; The film based material is a combination of oxides, and promptly oxide/monox (HL) can be titanium dioxide/monox (TiO
2/ SiO
2), also can be tantalum oxide/monox (Ta
2O
5/ SiO
2), can also be hafnia/monox (HfO
2/ SiO
2) etc.
3, a kind of laser to 1.06 μ m and 1.315 mum wavelength scopes carry out high reflection, to the method for making of the high saturating laser protective film of other wavelength coverage light, it is characterized in that realizing by following steps:
1., substrate (Sub) (1) is heated to 80 ℃～300 ℃;
2., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at substrate (Sub)
(1) oxidation of (λ is optical maser wavelength=1.315 μ m, and is same down) of last plating λ/4 thickness
Thing rete (H) (2);
3., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at oxide membranous layer (H)
(2) go up the membranous layer of silicon oxide (L) (3) that plates λ/4 thickness;
4., repeat the 2.～3. step, go up plating P to (P=9～15) oxidation at substrate (Sub) (1)
Thing rete/membranous layer of silicon oxide ((HL)
P);
5., by technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at P to oxide
Rete/membranous layer of silicon oxide ((HL)
P) membranous layer of silicon oxide (L) (4) go up plating λ/4 thickness
Oxide membranous layer (H) (5);
6., pass through technologies such as electron beam evaporation, ion beam sputtering or ion beam-assisted at oxide membranous layer (H)
(5) go up the membranous layer of silicon oxide (0.5L) (6) that plates λ/8 thickness, finish laser protective film
(Sub/ (HL)
PH0.5L/Air) making.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01133732A CN1439900A (en) | 2001-12-24 | 2001-12-24 | Laser protective film and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01133732A CN1439900A (en) | 2001-12-24 | 2001-12-24 | Laser protective film and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1439900A true CN1439900A (en) | 2003-09-03 |
Family
ID=27792883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01133732A Pending CN1439900A (en) | 2001-12-24 | 2001-12-24 | Laser protective film and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1439900A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385257C (en) * | 2004-07-22 | 2008-04-30 | 哈尔滨工业大学 | Radiation hardening self-cleaning nano-optical protection film |
| CN100385258C (en) * | 2004-07-22 | 2008-04-30 | 哈尔滨工业大学 | Radiation hardening optical protection film |
| CN1971395B (en) * | 2006-12-13 | 2011-02-09 | 中国科学院光电技术研究所 | A manufacturing method of optical limiter of photon crystal |
| CN102747328A (en) * | 2012-06-27 | 2012-10-24 | 同济大学 | Coating method capable of improving laser induced damage threshold of high-reflectivity film |
| CN105132871A (en) * | 2015-09-18 | 2015-12-09 | 河北汉光重工有限责任公司 | Plating method for laser high-reflective film |
| CN106011746A (en) * | 2016-07-11 | 2016-10-12 | 上海航天设备制造总厂 | Laser protective film for satellite solar battery array and preparation method thereof |
| CN106415330A (en) * | 2014-02-04 | 2017-02-15 | 东海光学株式会社 | Optical product, glasses lens and glasses |
| WO2018052674A1 (en) * | 2016-09-19 | 2018-03-22 | John Lee | Screen to protect display from laser beam damage |
| CN112408810A (en) * | 2020-11-24 | 2021-02-26 | 中国电子科技集团公司第十八研究所 | Laser protection glass cover plate for space solar cell and preparation method thereof |
| CN114630028A (en) * | 2022-03-01 | 2022-06-14 | 维沃移动通信有限公司 | Camera module and electronic equipment |
-
2001
- 2001-12-24 CN CN01133732A patent/CN1439900A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385257C (en) * | 2004-07-22 | 2008-04-30 | 哈尔滨工业大学 | Radiation hardening self-cleaning nano-optical protection film |
| CN100385258C (en) * | 2004-07-22 | 2008-04-30 | 哈尔滨工业大学 | Radiation hardening optical protection film |
| CN1971395B (en) * | 2006-12-13 | 2011-02-09 | 中国科学院光电技术研究所 | A manufacturing method of optical limiter of photon crystal |
| CN102747328A (en) * | 2012-06-27 | 2012-10-24 | 同济大学 | Coating method capable of improving laser induced damage threshold of high-reflectivity film |
| CN102747328B (en) * | 2012-06-27 | 2014-01-29 | 同济大学 | Coating method capable of improving laser induced damage threshold of high-reflectivity film |
| CN106415330A (en) * | 2014-02-04 | 2017-02-15 | 东海光学株式会社 | Optical product, glasses lens and glasses |
| CN105132871A (en) * | 2015-09-18 | 2015-12-09 | 河北汉光重工有限责任公司 | Plating method for laser high-reflective film |
| CN106011746A (en) * | 2016-07-11 | 2016-10-12 | 上海航天设备制造总厂 | Laser protective film for satellite solar battery array and preparation method thereof |
| CN106011746B (en) * | 2016-07-11 | 2019-01-25 | 上海航天设备制造总厂 | Lasing safety film and preparation method thereof for Satellite vapour image |
| WO2018052674A1 (en) * | 2016-09-19 | 2018-03-22 | John Lee | Screen to protect display from laser beam damage |
| CN112408810A (en) * | 2020-11-24 | 2021-02-26 | 中国电子科技集团公司第十八研究所 | Laser protection glass cover plate for space solar cell and preparation method thereof |
| CN114630028A (en) * | 2022-03-01 | 2022-06-14 | 维沃移动通信有限公司 | Camera module and electronic equipment |
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