CN1431854A - Organic electricity excitated luminescence module with fluorin inorganic layer - Google Patents
Organic electricity excitated luminescence module with fluorin inorganic layer Download PDFInfo
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- CN1431854A CN1431854A CN02101606A CN02101606A CN1431854A CN 1431854 A CN1431854 A CN 1431854A CN 02101606 A CN02101606 A CN 02101606A CN 02101606 A CN02101606 A CN 02101606A CN 1431854 A CN1431854 A CN 1431854A
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Abstract
The structure of the luminescence module includes the base plate, the transparent conducting layer (positive electrode), the inorganic layer with fuorin, the cavity transmission layer, the organic luminescent layer, the electron transmission layer and the metal conducting layer (negative layer) in sequence. The metal fluoride constitutes the inorganic layer with fluorin. The said inorganic layer increases the service life of the organic electricity excitated luminescence module, making the module steady.
Description
Technical field
The invention provides a kind of organic EL component that contains fluorin inorganic layer, utilize luminiferous semiconductor subassembly, impose voltage and make it luminous, (electroluminescent, EL) field are present emerging Display Technique to belong to EL component.
Background technology
Deliver the organic molecule EL component and nineteen ninety Britain Cambridge university also successfully is applied in macromolecular material on the EL component from Kodak company in 1987, after this promptly caused the attention of all circles' height and follow-up input research.
(organic electroluminescence, OEL) Display Technique possess self-luminous, high answer speed to organic electric-excitation luminescent, the visual angle is wide, resolution is good and multiple advantages such as high brightness, low driving voltage, are considered to the emerging application technology of display.The most basic organic EL component is double-deck organic structure assembly, and ground floor is an electric hole transfer layer, and the second layer is organic luminous layer/electron transfer layer, and this two-layer organic material is placed between a transparency electrode (positive pole) and the metal electrode (negative pole).In order to promote the luminous efficiency of organic EL component, also can between a transparency electrode (positive pole) and a metal electrode (negative pole), form the assembly of three layers of organic layer, it puts in order and is electric hole transfer layer in regular turn, organic luminous layer and electron transfer layer, the luminescence process of this assembly is for after organic luminescence component adds a bias voltage, electric hole and electronics are respectively from both positive and negative polarity under the driving of electric field, crossing behind other energy barrier meets in luminescent layer forms exciton (Excition), and exciton is failed back ground state and sent light by excitation state with radiation mode afterwards.The organic EL component that Kodak company in 1987 is delivered, it promptly is the most basic double-deck organic EL component, its structure is ITO/NPB/Alq/MgAg, because three-(8-river rising in Ningxia and flowing into central Shaanxi Kui quinoline) aluminium (Tris-(8-hydroxyquinoline) aluminum of this basic double-deck organic EL component, Alq) higher with the energy barrier of negative pole metal electrode, therefore the electronics injection rate is lower, in order to increase the efficient of organic EL component, increase brightness and reduce driving voltage, and the life-span of promoting assembly, Kodak company changes to the negative pole metal electrode combination electrode that contains inorganic fluorine compound, and inorganic compound is used as electron transfer layer, and can increase the injection rate of electronics, reduce the operating voltage of OLE assembly and increase brightness, wherein with LiF maximum efficiency is arranged, this combination electrode typically uses LiF/Al.Yet this document is only done improvement at the interface of luminescent layer and negative pole metal electrode, do not process for the interface between transparency electrode (positive pole) and the electric hole transfer layer, if attempt between transparency electrode and electric hole transfer layer the more electric hole implanted layer (as CuPc) of evaporation one deck, increase the injection rate in electric hole, then can cause driving voltage to increase.
Technology contents
Main purpose of the present invention, be to solve above-mentioned defective, avoid the existence of above-mentioned defective, the invention provides a kind of organic EL component that contains fluorin inorganic layer, stability at organic EL component is improved, and inserts one and contains fluorin inorganic layer between transparency electrode and electric hole transfer layer, and the electric current of its assembly is increased, reduce driving voltage, promote assembly life-span.
For realizing above-mentioned purpose, the invention provides a kind of organic EL component that contains fluorin inorganic layer, between a transparency electrode (positive pole) and a metal electrode (negative pole), form one in regular turn and contain fluorin inorganic layer, electric hole transfer layer, organic luminous layer and electron transfer layer, contain fluorin inorganic layer between this positive pole and electric hole transfer layer, one metal fluoride of institute's evaporation can make the electric current of organic EL component increase, reduce driving voltage, promote assembly life-span.
Description of drawings
Fig. 1 contains the organic EL component structure chart of fluorin inorganic layer for the present invention.
Fig. 2 is ITO/NPB/Alq/LiF/Al and ITO/AlF
3The current-voltage comparison diagram of two kinds of assemblies of/NPB/Alq/LiF/Al.
Fig. 3 is ITO/NPB/Alq/LiF/Al and ITO/AlF
3The brightness of two kinds of assemblies of/NPB/Alq/LiF/Al-voltage comparison diagram.
Fig. 4 is ITO/AlF
3Among/the NPB/Alq/LiF/Al, AlF
3Thickness is to the component efficiency graph of a relation.
Fig. 5 is ITO/NPB/Alq/LiF/Al and ITO/AlF
3The brightness decay of two kinds of assemblies of/NPB/Alq/LiF/Al-time comparison diagram.
Fig. 6 is ITO/NPB/Alq/LiF/Al and ITO/AlF
3Voltage increase-time the comparison diagram of two kinds of assemblies of/NPB/Alq/LiF/Al.
Fig. 7 is ITO/CuPc/NPB/Alq/LiF/Al and ITO/AlF
3The brightness decay of two kinds of assemblies of/NPB/Alq/LiF/Al-time comparison diagram.
Fig. 8 is ITO/CuPc/NPB/Alq/LiF/Al and ITO/AlF
3Voltage increase-time the comparison diagram of two kinds of assemblies of/NPB/Alq/LiF/Al.
Fig. 9 is assembly brightness decay-time comparison diagram of ITO/NPB/Alq/LiF/Al and ITO/MFx/NPB/Alq/LiF/Al.
Embodiment
The invention provides a kind of organic EL component that contains fluorin inorganic layer, its structure as shown in Figure 1, one substrate layer 18 at first is provided, its material is the insulating barrier and the optics penetrable material of electricity, the character that penetrates of light is penetrable this substrate layer 18 in the time of will making organic EL component luminous, so be generally glass or plastics.
On this substrate layer 18, form the anode electrode that a transparent electrode layer 17 is used as this EL component, typically use indium tin oxide (Indium tin oxide) or indium-zinc oxide (indium zinc oxide), this layer is can appear light in the time of will making organic EL component luminous, conducts electricity and optics penetrates character so have.
On this transparent electrode layer, form a thickness range and contain fluorin inorganic layer 16 between 5 to 500 in the evaporation mode, the function of this layer can make electric hole injection rate increase, and this material that contains fluorin inorganic layer 16 can be metal fluorides such as aluminum fluoride, magnesium fluoride, calcirm-fluoride, strontium fluoride, barium fluoride, lithium fluoride aluminium, sodium fluoride, potassium fluoride, rubidium fluoride RbF, cesium fluoride.
Contain on the fluorin inorganic layer 16 in this and to form an electric hole transfer layer 15 in the evaporation mode, its material can be nitrogen, nitrogen '-two phenyl-nitrogen, nitrogen '-(-methylbenzene) benzidine (N, N '-Diphenyl-N, the Benzidine of N '-(m-Tolyl), TPD) or (N, N '-bis-(l-naphenyl)-N, N '-diphenyl-l '-biphenyl-4,4 '-diamine, NPB).Form one deck organic luminous layer 14 again on this electricity hole transfer layer 15, the material of this organic luminous layer is the fluorescent luminescent material, can make electronics and electric hole in this zone again in conjunction with and send light.Simple structure is single luminescent material, and as the most normal use is that (Tris-(8-hydroxyquinoline) aluminum, Alq), this material has high fluorescent efficient to three-(8-river rising in Ningxia and flowing into central Shaanxi Kui quinoline) aluminium, is the material of green light.Organic luminous layer 14 also can be that various material is formed jointly, wherein comprises material of main part and one or more guest materialss.Material of main part typically uses Alq, and guest materials then is the fluorescent material, is also referred to as adulterate body (dopant), the color of its may command organic electric-excitation luminescent.
On organic luminous layer 14, form an electron transfer layer 13, its material can be the compound that Alq Huo Han two sits (oxadiaole) group, as 2-(the two phenyl of 4-)-5-(tributyl phenyl)-1,3,4- two sits (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxidiazole, PBD) .Alq has the characteristic of luminous and electron transport simultaneously, therefore at the organic luminous layer 14 and the electron transfer layer 13 of organic EL component of the present invention, all is to use Alq.Form a metal electrode layer 12 at last again on electron transfer layer 13, negative pole as this organic EL component, its material typically uses the metal that the low working function of one deck and one deck can be stable in air, also can use double-deck combination electrode such as LiF/Al.
The embodiment of first embodiment---assembly 1:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
Evaporation electricity hole transfer layer in regular turn on ito glass substrate at first, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then the LiF of 5 and the aluminium of 1000 are worked as the negative pole metal electrode on the evaporation.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and current density and the brightness of 10V are respectively 170mA/cm
2, 6020cd/m
2, the peak efficiency of assembly is 3.0lm/w, the measuring condition in life-span is fixed current density 20mA/cm
2Drive, measure the decline situation of brightness.
The embodiment of second embodiment---assembly 2:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The AlF of evaporation 10 in regular turn on ito glass substrate at first
3, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and current density and the brightness of 10V are respectively 507mA/cm
2, 8697cd/m
2, the peak efficiency of assembly is 2.8lm/w.The current density of Fig. 2 and Fig. 3 display module 2 and brightness are high than assembly 1.
The embodiment of the 3rd embodiment---assembly 3:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The AlF of evaporation 30 in regular turn on ito glass substrate at first
3, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 3.2lm/w.
The embodiment of the 4th embodiment---assembly 4:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The AlF of evaporation 50 in regular turn on ito glass substrate at first
3, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.
The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 2.9lm/w, and Fig. 5 compares in the life-span of assembly 1 and assembly 4, and operating condition is for deciding electric current 20mA/cm
2, the brightness of two assemblies is about 600cd/m
2, the brightness decay speed of display module 4 is slow than assembly 1 among Fig. 5, and expression assembly 4 is more stable.Fig. 6 is display voltage rising situation then, and it is more stable that assembly 4 also shows.
The embodiment of the 5th embodiment---assembly 5:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The AlF of evaporation 75 in regular turn on ito glass substrate at first
3, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 3.2lm/w.
The embodiment of the 6th embodiment---assembly 6:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The AlF of evaporation 100 in regular turn on ito glass substrate at first
3, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 2.9lm/w, and Fig. 4 is the efficient comparison diagram of assembly 1 and assembly 6, can find AlF
3Efficient when thickness is 30 and 75 is than not containing AlF
3The assembly of layer is higher.
The embodiment of the 7th embodiment---assembly 7:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The at first CuPc of evaporation 400 , electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer in regular turn on ito glass substrate, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 3.2V, and the peak efficiency of assembly is 2.8lm/w, and Fig. 7 compares in the life-span of assembly 7 and assembly 4, and operating condition is for deciding electric current 20mA/cm
2, the brightness of two assemblies is about 600cd/m
2, the brightness decay speed of display module 4 is slow than assembly 7 among Fig. 7, and expression assembly 4 is more stable.Fig. 8 is display voltage rising situation then, and it is more stable that assembly 4 also shows, and its driving voltage is also low than assembly 7.
The embodiment of the 8th embodiment---assembly 8:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The CaF of evaporation 50 in regular turn on ito glass substrate at first
2, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 2.9lm/w.
The embodiment of the 9th embodiment---assembly 9:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The MgF of evaporation 50 in regular turn on ito glass substrate at first
2, electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 2.3lm/w.
The embodiment of the tenth embodiment---assembly 10:
Clean ito glass substrate earlier, the cleaning step of ito glass substrate is as follows, at first clean with cleaning agent, placing the ultrasonic waves oscillator to clean, and use pure water and isopropyl alcohol ultrasonic waves to shake each secondary in regular turn to be placed in the baking oven dryly, after drying, to take out ito glass substrate, ito glass substrate is placed on the carrier, insert among the cavity, carry out O
2The electricity slurry is handled.
The at first LiF of evaporation 50 , electric hole transfer layer, NPB (600 ) and organic luminous layer/electron transfer layer in regular turn on ito glass substrate, Alq (600 ), and then on the evaporation aluminium of the LiF of 5 and 1000 when the negative pole metal electrode.Establishment of component is sent in the glove box after finishing, and carries out the encapsulation of cover plate, and carries out the feature measurement of assembly.The starting voltage of this assembly is 2.6V, and the peak efficiency of assembly is 2.7lm/w, and Fig. 9 is the assembly brightness decay figure of different metal fluoride, shows that the assembly of different metal fluoride all has more stable performance.
Claims (4)
1. organic EL component that contains fluorin inorganic layer, comprise an anodal and negative pole, and the electric hole transfer layer (15) between between positive and negative electrode, organic luminous layer (14) and electron transfer layer (13), it is characterized in that: add one between this positive pole and electric hole transfer layer (15) and contain fluorin inorganic layer (16).
2. the organic EL component that contains fluorin inorganic layer according to claim 1, wherein, this positive pole material be tin indium oxide (indium-tin-oxide, ITO), zinc-tin oxide (indium-zine-oxide, IZO).
3. the organic EL component that contains fluorin inorganic layer according to claim 1, wherein, this contains fluorin inorganic layer (16) is metal fluoride, can be selected from LiF, NaF, BeF
2, MgF
2, CaF
2, SrF
2, BaF
2, AlF
3
4. the organic EL component that contains fluorin inorganic layer according to claim 1, wherein, this contains fluorin inorganic layer (16) thickness range between 5-500 .
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02101606A CN1431854A (en) | 2002-01-08 | 2002-01-08 | Organic electricity excitated luminescence module with fluorin inorganic layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02101606A CN1431854A (en) | 2002-01-08 | 2002-01-08 | Organic electricity excitated luminescence module with fluorin inorganic layer |
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| CN1431854A true CN1431854A (en) | 2003-07-23 |
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| CN02101606A Pending CN1431854A (en) | 2002-01-08 | 2002-01-08 | Organic electricity excitated luminescence module with fluorin inorganic layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824943A (en) * | 2012-11-19 | 2014-05-28 | 海洋王照明科技股份有限公司 | Solar cell device and preparation method thereof |
| CN105320333A (en) * | 2014-07-29 | 2016-02-10 | 南京瀚宇彩欣科技有限责任公司 | Organic electroluminescence anti-interference touch panel |
-
2002
- 2002-01-08 CN CN02101606A patent/CN1431854A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824943A (en) * | 2012-11-19 | 2014-05-28 | 海洋王照明科技股份有限公司 | Solar cell device and preparation method thereof |
| CN105320333A (en) * | 2014-07-29 | 2016-02-10 | 南京瀚宇彩欣科技有限责任公司 | Organic electroluminescence anti-interference touch panel |
| CN105320333B (en) * | 2014-07-29 | 2018-10-23 | 南京瀚宇彩欣科技有限责任公司 | Organic electric-excitation luminescent anti-interference touch panel |
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