CN1431772A

CN1431772A - Single end point sensing amplitier

Info

Publication number: CN1431772A
Application number: CN 02100951
Authority: CN
Inventors: 张政信
Original assignee: Realtek Semiconductor Corp
Current assignee: Realtek Semiconductor Corp
Priority date: 2002-01-08
Filing date: 2002-01-08
Publication date: 2003-07-23
Anticipated expiration: 2022-01-08
Also published as: CN1204681C

Abstract

The amplifier receives the signal from the semiconductor storage device and generates the output signal at the output end. The amplifier includes the following parts. The first load unit. The first sensing switch unit is utilized to on/off the channel between the semiconductor storage device and the output end of the amplifier. The second load unit provides the current load larger than the current load of the first load unit. The second sensing switch unit is utilized to provides the charge current. The reverse logic unit is utilized to on/off the sensing switch units. Thus, the charge current is provided from the second sensing switch unit to raise the reaction speed of the sensing amplifier without need of the charge current control signal in advance.

Description

Single end point sensing amplitier

Technical field

The present invention system is about the perception amplifier, particularly about not needing the single end point sensing amplitier of precharge control signal.

Background of invention

The perception amplifier is used in the signal that receives semiconductor memory system usually, and produces output signal in output.Figure 1 shows that the circuit of general known single end point sensing amplitier.As shown in the drawing, this single end point sensing amplitier 10 comprises a sense switch unit 11, a reverse logic unit 12 and a load unit 13.Sense switch unit 11 is to be coupled between the output of semiconductor memory system and this perception amplifier.This sense switch unit 11 is generally n type field effect transistor (NMOS), and is used for passage between the output of switch storage device and this perception amplifier.Reverse logic unit 12 is to be coupled between semiconductor memory system and the sense switch unit 11, and is used for opening or closing sense switch unit 11.Reverse logic unit 12 is generally reverser (Inverter) or reverse or lock (NOR Gate).And load unit 13 is coupled in sense switch unit 11, in order to provide the sense switch unit 11 loads.Load unit 13 is generally n type field effect transistor (NMOS) or p type field effect transistor (PMOS).Single end point sensing amplitier 10 shown in Figure 1 is subject to the intensity of load unit 13, so that reaction speed is restricted.

For the problem of the reaction speed of improving single end point sensing amplitier, the general practice is to add a precharge unit at output.The circuit that is single end point sensing amplitier shown in Figure 2 with pre-charging functions.As shown in Figure 2,, therefore can overcome the problem of the undercapacity of load unit 13, the reaction speed of this perception amplifier 20 is promoted because this perception amplifier 20 utilizes precharge control signal via transistor 24 pre-charges.But need a precharge control signal but this kind has the single end point sensing amplitier 20 of pre-charging functions, increase the complexity of control circuit.And it is then inapplicable for the occasion that precharge control signal can't be provided.

Summary of the invention

Because the problems referred to above, the purpose of this invention is to provide a kind of precharge control signal that do not need, and the single-ended point that can promote reaction speed there is not precharge formula perception amplifier.

For reaching above-mentioned purpose, single end point sensing amplitier of the present invention comprises: one first load unit provides current loading; One first sense switch unit is to be coupled between the semiconductor memory system and first load unit, and is forming output with the first load unit tie point, is used for passage between the output of switching semiconductor storage arrangement and this perception amplifier; One second load unit provides the current loading greater than first load unit; One second sense switch unit is to be coupled between the semiconductor memory system and second load, is used to provide charging current; And a reverse logic unit, be to be coupled between semiconductor memory system and the first sense switch unit and the second sense switch unit, be used for opening or closing these sense switch unit.

The wherein above-mentioned first sense switch unit and the second sense switch unit can be n type field effect transistor.

Wherein above-mentioned reverse logic unit can be reverser, and the output of this reverser is connected to the gate of the n type field effect transistor of above-mentioned first sense switch unit and the above-mentioned second sense switch unit simultaneously.

Wherein above-mentioned first load unit and second load unit can be p type field effect transistor.

So, the reaction speed that nationality provides charging current to promote this perception amplifier by the second sense switch unit, and do not need precharge control signal.

Description of drawings

Figure 1 shows that the circuit of general known single end point sensing amplitier.

Figure 2 shows that the circuit of single end point sensing amplitier with pre-charging functions.

Fig. 3 is the circuit diagram of single end point sensing amplitier of the present invention.

Change in voltage curve when Fig. 4 display-memory device is output as memory component and is off and on.

Embodiment

Describe single end point sensing amplitier of the present invention in detail below with reference to accompanying drawing.

Fig. 3 is the circuit diagram of single end point sensing amplitier of the present invention.As shown in the drawing, single end point sensing amplitier 30 of the present invention comprises the first sense switch unit 31, first load unit 32, the second sense switch unit 33, second load unit 34 and reverse logic unit 35.Single end point sensing amplitier 30 of the present invention is many one group of sense switch unit and load unit with the difference of known single end point sensing amplitier (with reference to figure 1), use when the A point is positioned at low-voltage, utilize second load unit 34 to provide a charging current, so as to promoting the response speed of this perception amplifier 30 via the second sense switch unit 33.In addition, single end point sensing amplitier 30 of the present invention is many one group of sense switch unit with the difference of the single end point sensing amplitier (with reference to figure 2) of known tool charge function, so as to the charging interval of control charging current, and omits precharge control signal.

The first sense switch unit 31, first load unit 32 and reverse logic unit 35 are identical with the function of known single end point sensing amplitier (with reference to figure 1), no longer repeated description.And the structure of second load unit 34 is identical with first load unit 32, and difference is that second load unit 34 is loads of the electric current that can provide bigger.Secondly, the structure of the second sense switch unit 33 is identical with the first sense switch unit 31, and difference is that the equiva lent impedance of the second sense switch unit 33 is greater than the first sense switch unit 31.Therefore, when saturated, the electric current that the first sense switch unit 31 and first load unit 32 provide can make 0 point voltage fast lifting in charging, and simultaneously the second sense switch unit 33 near the completion statuses of charging.So the function of second load unit 34 is identical with the function of the transistor of Fig. 2 24, and the second sense switch unit 33 can be closed the replacement precharge control signal automatically.Y pass-gate signal is the control signal of vertical channel lock among the figure, is to produce according to address (Address) to be used for the bit line (Bit Line) of selection memory; And Word-line is the control signal of character line, is to produce according to address (Address) to be used for opening whole row's memory.

The action of the first sense switch unit and the second sense switch unit is described below with reference to Fig. 4.The output voltage change curve of Fig. 4 display-memory device.As shown in the drawing, curve A is 0 the voltage of Fig. 3, and curve B is the voltage that A is ordered, and curve C is the voltage of the control signal Word Line of character line.Setting A point initial voltage is 0V, and the initial voltage of Word Line also is 0V, and behind A point voltage input reverse logic unit 35, this reverse logic unit 35 produces logical one voltage at the B point.Therefore, the first sense switch unit 31 and the second sense switch unit 33 be conducting simultaneously all, the action that this promptly charges.But because second load unit 34 can provide bigger load, the therefore charging rate of the charging rate of order for A when only using the single first sense switch unit 31, so the voltage that A order lifting comparatively fast.When the A point was near saturation voltage by the time, 0 can promote rapidly, and this is the state that memory component is OFF.Then Word Line rises to VCC, be the state that memory component is ON, because the transistorized equiva lent impedance of the first sense switch unit 31 is less than the transistorized equiva lent impedance of the second sense switch unit 33, stream can be much larger than the electric current of stream through second load unit 32 through the electric current of first load unit 31, and therefore 0 can be pulled down rapidly.

Therefore, perception amplifier of the present invention utilizes second load unit and the second sense switch unit that charging current is provided, and closes the second sense switch unit automatically.So perception amplifier of the present invention is the perception amplifier with pre-charging functions, but does not need precharge control signal, and response speed is fast.

Though more than with embodiment the present invention is described, therefore do not limit scope of the present invention, only otherwise break away from main idea of the present invention, the sector person can carry out various distortion or change.For example, though single end point sensing amplitier of the present invention is to use same reverse logic unit in this embodiment, also can use two independently the reverse logic unit control two sense switch unit respectively.

Claims

1. a single end point sensing amplitier is to be used in the signal that receives semiconductor memory system, it is characterized in that this single end point sensing amplitier comprises:

One first load unit provides load current;

One first sense switch unit, system is coupled between aforesaid semiconductor storage arrangement and aforementioned first load unit, and forming output with the aforementioned first load unit tie point, be used for passage between the output of switch aforesaid semiconductor storage arrangement and this perception amplifier; And

One second load unit provides the electric current greater than aforementioned first load unit;

One second sense switch unit is to be coupled between aforesaid semiconductor storage arrangement and aforementioned second load, is used to provide a charging current;

One reverse logic unit is to be coupled between semiconductor memory system and aforementioned first sense switch unit and the aforementioned second sense switch unit, is used for opening or closing this first and second sense switch unit;

Wherein, the charging current that provides by the aforementioned second sense switch unit promotes the reaction speed of this perception amplifier.

2. single end point sensing amplitier as claimed in claim 1, the wherein aforementioned first sense switch unit is a n type field effect transistor.

3. single end point sensing amplitier as claimed in claim 2, the wherein aforementioned second sense switch unit is a n type field effect transistor.

4. single end point sensing amplitier as claimed in claim 3, wherein aforementioned reverse logic unit is a reverser, and the output of this reverser is connected to the gate of the n type field effect transistor of aforementioned first sense switch unit and the aforementioned second sense switch unit simultaneously.

5. single end point sensing amplitier as claimed in claim 1, wherein aforementioned first load unit is a p type field effect transistor.

6. single end point sensing amplitier as claimed in claim 1, wherein aforementioned second load unit is a p type field effect transistor.