CN1426844A - Injection nozzle structure and its manufacturing method - Google Patents
Injection nozzle structure and its manufacturing method Download PDFInfo
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- CN1426844A CN1426844A CN 01143334 CN01143334A CN1426844A CN 1426844 A CN1426844 A CN 1426844A CN 01143334 CN01143334 CN 01143334 CN 01143334 A CN01143334 A CN 01143334A CN 1426844 A CN1426844 A CN 1426844A
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Abstract
A fluid jet head on a substrate is composed of an air bubble generator, a functional element for controlling the air bubble generator, a first electric conducting line formed by polycrystalline silicon, a fluid cavity with at least one jet hole, a branch tube communicated with the said fluid cavity for supplying fluid, and a second electric conducting line. A grid and the first electric conducting line are formed by same yellow-light etching process (PEP).
Description
Technical field
The present invention relates to a kind of liquid injection nozzle structure and manufacture method thereof, particularly relate to a kind of liquid injection nozzle structure and manufacture method thereof of utilizing layer of metal layer and one deck polysilicon layer as electrically-conductive layer.
Background technology
At present, fluid ejection apparatus has been applied in the first-class equipment of the ink-jet of ink-jet printer widely, and along with the reliability (reliability) of fluid ejection apparatus improves constantly, the reduction significantly of cost, and can provide the research and development of high-frequency (frequency) with the high-quality drop injection of high spatial resolution (spatialresolution), fluid ejection apparatus also has other numerous possible application gradually, for example: fuel injection system (fuel injection system), cell classification (cellsorting), drug delivery system (drug delivery system), spray printing photoetching technique (printlithography) and micro-injection propulsion system (micro jet propulsion system) or the like.
In the product of existing ink gun, have from the mode (center feed) of centre supply ink, for example commercially available Hewlett-Packard (HP, Hewlett-Packard) numbering C6578 ink cartridges; Also have from the mode (edge feed) of both sides supply ink, for example the numbering C51645 ink cartridges of commercially available Hewlett-Packard.The former generally is the mode that adopts sandblast, laser cutting or chemical etching, and (chip) penetrates with chip, carries out ink supply by the centre again.Yet this method not only chip size needs greatlyyer, and the part of diging up just can't do any utilization, so and do not meet economic benefit.As for the latter, though need not punch the action of chip, but still the manufacture craft that need use two metal layers and one deck polysilicon layer spends, and owing to need use multiple tracks photomask manufacture craft, therefore not only manufacturing cost and Production Time all improve relatively, also can cause the considerable wasting of resources simultaneously.
In addition, at United States Patent (USP) number 5,774, in 148, then disclose a kind of use second layer metal layer and cause short circuit through an interlayer hole (via) and a ground floor metal level, be used as heating element heater (heater) and the interelement signal transmission of MOS field-effect transistor (MOSFET), polysilicon layer is then as the grid of MOSFET element, and utilizes a contact hole (contact layer) and this ground floor metal level to cause short circuit and reach the purpose of citation.
Summary of the invention
The object of the present invention is to provide a kind of layer of metal layer and one deck polysilicon layer of only utilizing as the liquid injection nozzle structure and the manufacture method thereof of electrical conducting shell,, and then reduce manufacturing cost with the simplification manufacture craft.
The object of the present invention is achieved like this, and a kind of liquid injection nozzle structure promptly is provided, and this liquid injection nozzle structure includes: a base material; At least one bubble generator is located on this base material; At least one function element is located on this base material, is used for controlling this bubble generator; One by first conducting wire that polysilicon constituted; And one second conducting wire, be used for being electrically coupled between this function element and this bubble generator, and be electrically coupled between this function element and this first conducting wire.
The present invention also provides a kind of manufacture method of fluid ejecting head, and this manufacture method includes the following step: a base material is provided; Form at least one bubble generator on this base material; Form at least one function element on this base material; Form one first conducting wire and this first conducting wire is made of polysilicon; And form one second conducting wire, and this second conducting wire is in order to being electrically coupled between this function element and this bubble generator, and be electrically coupled between this function element and this first conducting wire.
And most preferred embodiment of the present invention is, liquid injection nozzle structure is formed on the base material, it includes a bubble generator, and one is used for controlling the function element of bubble generator, and one by first conducting wire that polysilicon constituted, one fluid cavity, one is connected in the manifold of fluid cavity, in order to supplying a fluid to fluid cavity, and one second conducting wire, be used for being electrically coupled between function element and the bubble generator, and be electrically coupled between the function element and first conducting wire.Wherein, fluid cavity includes at least one spray orifice that is communicated to substrate surface in addition, and grid and first conducting wire be formed at same yellow-light etching process (photo-etching-process, PEP) in.
Because the present invention only utilizes layer of metal layer and one deck polysilicon layer as the electrically-conductive layer on the liquid injection nozzle structure, and overcome time delay and heat has problems, so tangible advantage is arranged on photomask cost, processing charges and manufacturing process.
Description of drawings
Fig. 1 is the structure cutaway view of ink gun structure of the present invention;
Fig. 2 is an embodiments of the invention cross section schematic diagram;
Fig. 3 is the top view of fluid ejecting head of the present invention;
Fig. 4 is the partial enlarged drawing of fluid ejecting head chip of the present invention;
Fig. 5 is the matrix form drive circuit schematic diagram of fluid ejecting head of the present invention;
Fig. 5 A is the address wire signal transmission schematic diagram of fluid ejecting head of the present invention;
Fig. 5 B is the A1 schematic equivalent circuit of P1 group in the fluid ejecting head of the present invention;
Fig. 5 C is the A1 schematic equivalent circuit of P16 group in the fluid ejecting head of the present invention;
Fig. 5 D is the HSPICE simulation drawing of P1A1 equivalent circuit in the fluid ejecting head of the present invention and P16A1 equivalent circuit;
Fig. 6 to Fig. 8 is the making schematic flow sheet of fluid ejecting head of the present invention.
The specific embodiment
See also Fig. 1, Fig. 1 is the structure cutaway view of fluid ejecting head of the present invention.Fluid ejecting head of the present invention is a kind of fluid ejection apparatus with virtual air valve (virtual valve).As shown in Figure 1, the bubble generator includes two bubbles and produces member, be respectively the first heating element heater 14a and the second heating element heater 14b, be looped around around the spray orifice (nozzle) 12, by the difference between two heating element heater 14a, 14b, for example the difference of resistance value in the time of can making this two heating element heater of heating 14a, 14b, can successively generate two bubbles.At first form one first bubble (not shown) earlier at the first heating element heater 14a place of spray orifice 12 other close manifolds (manifold) 11, this first bubble can completely cut off manifold 11 and spray orifice 12, and produce the function of similar air valve, to reduce producing the effect that interferes with each other (cross talk) with adjacent fluid chambers 16, then can produce one second bubble (not shown) near the second heating element heater 14b place, second bubble is pushed the fluid (not shown) in the fluid cavity 16 thus, makes fluid by ejection in the spray orifice 12.At last, second bubble can combine with first bubble, and the combination by this two bubble is to reach the generation that reduces satellite droplet (satellite droplet).
Because the structure of fluid ejecting head of the present invention can reach the demand of smooth ejection liquid without the eating thrown entire chip, therefore based under this framework, the present invention just can carry out the layout of power line (power lines) above manifold 11.Under the prerequisite of not considering resistive layer, the present invention can only use single-polysilicon layer and single metal level, and (single polysilicon and single metal, manufacture craft SPSM) just can be finished the circuit layout of the electrical conduction of entire chip.Therefore the present invention is better than existing product significantly on photomask cost and making time-histories.For explain orally convenient for the purpose of, below fluid ejecting head of the present invention just be that embodiment is illustrated with the ink gun.
See also Fig. 2; the cutaway view that Fig. 2 completes for entire chip of the present invention; wherein the first heating element heater 14a and second heating element heater 14b top has deposited a low temperature oxide layer 18 with as protective layer; and the area in appointment punches (via) so that metal level 13 flows into the surface, top of heater 14a, 14b through hole thus, and reaches the purpose that metal level 13 is communicated with heater 14a, 14b.
Similarly, the drain electrode (drain) 68 at MOSFET (MOS field-effect transistor) element 15 also is electrically connected to heater 14a, 14b and earth terminal (ground) 20 by metal level 13 with source electrode (source) 66.So when the grid (gate) 64 of MOSFET element 15 is opened, the voltage signal that the liner (pad) that is made of metal level 13 can be supplied with the outside is delivered in this ink gun, at this moment, electric current can be entered by liner, earlier via metal level 13 to the first heating element heater 14a and the second heating element heater 14b, again via the drain electrode 68 of MOSFET element 15 to source electrode 66, flow to earth terminal 20 again and finish the once action of heating.At this moment, because the ink in the fluid cavity 16 (being the ink-jet chamber of this ink gun) is heated, thereby produces two bubbles ink droplet is pushed away via spray orifice 12.Wherein, can be according to the difference of required print data amount, and control different spray orifice 12 respectively with the ejection ink droplets.In addition, the material of metal level 13 is selected from aluminium (Aluminum), gold (Gold), copper (Copper), tungsten (Tungsten) and Al-Si-Cu alloy (Alloys of Al-Si-Cu) and constitutes in the group any one.
See also Fig. 3 and Fig. 4, Fig. 3 is the top view of ink gun of the present invention.In an embodiment, be divided into 16 P groups (comprising P1 to P16), each P group includes 22 addressing (Address again, A1 to A22), can contrast the matrix form drive circuit figure of Fig. 5, one logic circuit or microprocessor 32 will be according to the data of required printing, send one and select signal to power line driver (power driver) 34 and address wire driver (address driver) 35, control will open which addressing (A1 to A22) and which P group (P1 to P16) power supply gives.For example, if P1 is given in power supply, and open A22, then heater 14a, the 14b of A22 will finish the operation of heating and ink-jet according to the time of setting among P1 group's this moment.
See also Fig. 4, Fig. 4 is the partial enlarged drawing of B zone (dotted portion) among Fig. 3.As shown in Figure 4, the centre that can be clear that chip is provided with two row's spray orifices 12, if with the spray orifice 12 of entire chip (A-A ' separator bar with Fig. 3 is distinguished) in two, promptly include eight groups of spray orifices (P1 to P8), and the left side also includes eight groups of spray orifices (P9 to P16) on the right side of chip A-A '.And utilize the top of manifold 11, the Central District that two row's spray orifices are 12 carries out the layout of power line (power line) 19, in the right side of separator bar A-A ' layout 8 metal line (metal lines, P1 to P8), and be connected to the right output go into liner (I/O pads).Similarly, the left side of separator bar A-A ' also layout 8 metal line (metal lines, P9 to P16), and liner (I/Opads, not shown in the figures) is gone in the output that is connected to the left side.
Every group of pad P of the present invention taked the driver circuit layout method of U font to liner G, for example pad P 1 arrives the driver circuit layout method (shown in the dotted line position) of liner G1, and not cross-over connection mutually between each circuit connection, and only use layer of metal layer 13 promptly to finish the configuration of circuit, promptly from the brilliant power line 19 of pad P to heater 14a, 14b, link MOSFET element 15 again, the line to earth terminal liner G moves at last.In addition, at 11 transverse metal lines 22 of each layout of the both sides up and down of MOSFET element 15, transverse metal line 22 is connected with liner A, and in order to import the data of address wire driver 35 inputs into each MOSFET element 15, spray inks with decision by which spray orifice 12, and in each layout of the right and left of MOSFET element 15 two ends of chip (promptly near) 11 longitudinal polysilicon lines (polysilicon lines) 23, totally 22 polysilicon lines 23, and stamp contact layer (contact layer) 24 to finish electrical connection in the part that transverse metal line 22 and longitudinal polysilicon line 23 will be electrically connected, and the transverse metal line 22 that act as connection chip upper and lower side of vertical polycrystalline line 23, for example, by liner A1 input signal, will open the heating element heater of P16 this moment, then need to be passed to the transverse metal line 22 of below via longitudinal polysilicon line 23, just can be connected to the heater of P16, reach the function of ink-jet, and the near back of its operating principle is described in detail.
Please refer to Fig. 5 A to Fig. 5 D, Fig. 5 A to Fig. 5 D is in the embodiment of the invention, utilizes polysilicon lines 23 to carry out the circuit diagram of signal transmission.In an embodiment of the present invention, used the longitudinal polysilicon line 23 that reaches 2901 μ m be Address (A1, A2 ..., call wire A22), however performance do not influenced.Its reason is as follows: the gate terminal 64 of (one) MOSFET element 15 does not almost have electric current, so do not worry the heating disturbing effect of longitudinal polysilicon line 23; (2) shown in Fig. 5 A, when our desire sprays all P groups' (comprising P1-P16) A1, owing to worry to use longitudinal polysilicon line 23 cause because of whole piece lead resistance too big, the time delay that is produced (Time delay) problem takes place, therefore, for this problem is described, we select adjacent two groups of A1 Address (being P1 group's A1 and P16 group's A1) farthest, and because the frequency setting of whole ink-jet is slightly larger than 10KHz approximately, therefore (A1 under an ink-jet circulation, A2,, the situation that A22 opens in regular turn), each Address is about the opening time of 3.5 μ s, and P group's voltage service time must heat in the pulse bandwidth (Pulse width) of 3.5 μ s finishes (about 2 μ s), promptly has only the buffer time of contiguous Address each about 500ns of front and back our heat time heating time.Only meet under the aforesaid specification, the A1 that just is unlikely to have P1 group has turned off, and has prepared spray A2, and P16 group's A1 just turns off or the problem also do not turned off takes place.
In Fig. 5 A, be about the sheet resistance 10 Ω/μ m of 0.1 Ω/μ m and polysilicon lines 23 and can try to achieve according to the sheet resistance (Sheet resistance) of metal wire 22, when opening the grid 64 of whole A1 MOSFET elements 15, P1 group's A1 and P16 group's A1 fax lead resistance is respectively shown in Fig. 5 B and Fig. 5 C, Fig. 5 B is the equivalent circuit of P1 group's A1, Fig. 5 C then is the equivalent circuit of P16 group's A1, because when signal is transferred to P16 group's A1, need many through longitudinal polysilicon lines 23 and transverse metal line 22, therefore can be additionally in Fig. 5 C how the resistance R 2 (resistance be about 147 Ωs) of the resistance R 1 of a polysilicon lines 23 (resistance is about 2901 Ω) with a transverse metal line 22.Above-mentioned two circuit are carried out the HSPICE simulation to it, and its result is shown in figure five D, and the clock of P1 group's A1 50% occurs in 710ns as can be known, and the clock 50% of the A1 in the P16 group of process RC delay then occurs in 718ns.Hence one can see that, and P1 group and P16 group's A1 signal delay only differs 8ns, also has very big distance apart from we permissible scope 500ns, so can not have any impact to inkjet printing.
As follows at this process for making that is described in further detail liquid injection nozzle structure of the present invention.Please refer to Fig. 6 to Fig. 8, Fig. 6 to Fig. 8 is the making schematic flow sheet of liquid injection nozzle structure of the present invention.At first, on a silicon wafer substrate 60, form a field oxide (Field oxide) 62 with partial thermal oxidation method (Local oxidation), then carry out a boron ion cloth and plant (Blanket boron implant), to adjust the starting voltage (Threshold voltage) of drive circuit.Form a polysilicon gate (Polysilicon gate) 64 subsequently in field oxide 62, wherein, when forming polysilicon gate 64, also in the both sides of chip near the edge, form foregoing 22 longitudinal polysilicon line 23 (not shown)s, be used for being used as first conducting wire, and impose ion cloth again and plant, to form one source pole (Source) 66 and drain electrode (Drain) 68 in grid 64 both sides, finish MOSFET element 15.Deposit a low stress layer (Low stress layer) 72 subsequently, as silicon nitride (SiNx) material, with upper strata, as shown in Figure 6 as fluid cavity 16.
Please refer to Fig. 7, next, use etching solution potassium hydroxide (KOH) from the back etched of substrate 60 to form manifold 11, as supplying with the main runner that fluid enters, then again part field oxide 62 is removed with etching solution hydrofluoric acid (HF), as fluid cavity 16.Accurately controlling under the etching period subsequently, carrying out the etching of another time with etching solution potassium hydroxide (KOH), in order to strengthen the degree of depth of fluid cavity 16, so fluid cavity 16 just is connected with manifold 11 and can be filled up fluid.During carrying out this etching step, need give special heed to because the salient angle of fluid cavity 16 (Convex corner) also can be etched liquid attack and can be etched into the shape of circular arc.
And then proceed the manufacture craft of heater.Wherein, heater includes primary heater 14a and secondary heater 14b, and the manufacture craft of heater can be finished easily for existing this operator, so do not add to give unnecessary details at this.In addition, for primary heater 14a and secondary heater 14b, preferable material is aluminium tantalum alloy (Alloys of tantalum and aluminum), and other materials such as platinum (Platinum), hafnium boride (HfB2) etc. also can reach same function.In addition; in order to protect primary heater 14a and secondary heater 14b and to isolate this more than one MOSFET function element 15; so on whole base plate 60, the scope that comprises grid 64, source electrode 66, drain electrode 68 and field oxide 62 can deposit a low temperature oxide layer 74 again in order to as protective layer.
Then, on primary heater 14a and secondary heater 14b, form a conductive layer (Conductive layer) 13, be used for being used as the MOSFET function element 15 of first conducting wire with conducting primary heater 14a, secondary heater 14b and drive circuit.Wherein, drive circuit is in order to transmit a signal respectively independently to other heater (primary heater 14a and secondary heater 14b), and in order to drive a pair of above heater (primary heater 14a and secondary heater 14b), so can utilize the component and the connection line of negligible amounts, can identically reach the effect of control circuit.In an embodiment of the present invention, the preferred materials of conductive layer 13 is as Al-Si-Cu alloy (Alloys ofAluminum-Silicon-Copper), aluminium (Aluminum), copper (Copper), gold (Gold) or tungsten metal materials such as (Tungsten).Deposit again subsequently a low temperature oxide layer 76 on conductive layer 13 with as protective layer.
At last, please refer to Fig. 8, between primary heater 14a and secondary heater 14b, form a spray orifice 12.So far, can form one-body molded and have the fluid ejection apparatus array of drive circuit.
As shown in the above description, embodiments of the invention use one deck polysilicon lines and layer of metal line to finish the connection of circuit, and wherein polycrystalline silicon conducting wire 23 more can be made in a yellow-light etching process (PEP) to simplify manufacture craft simultaneously with polysilicon gate.So, not only can avoid using the second layer metal layer and reach cost-effective effect, and can not influence grid 64 switch motions of finishing MOSFET element 15 under its performance.
It is as follows that its operating principle then is described in detail in detail: please refer to Fig. 4 and Fig. 5, when carrying out inkjet printing, logic circuit or microprocessor 32 will be according to the data of required printing, decision will by which spray orifice ejection ink, then can send one selects signal to power line driver (power driver) 34 and address wire driver (address driver) 35, to open corresponding addressing (A1 to A22) and to supply power to corresponding P group (P1 to P16), electric current just can be flowed through heater 14a, 14b and be added hot fluid to produce bubble afterwards, carries out ink-jet action.For example: if will make way for the spray orifice 12a ejection drop at A1P1 place, then must via output go into liner A1 send to a voltage signal to the grid 64 of MOSFET element 15 with switch opens, then go into pad P 1 by output again a voltage signal is provided, to produce electric current, this moment, electric current just can be flowed through heater 14a, 14b and heating ink to produce bubble, and the drain electrode 68 of the MOSFET element 15 of flowing through again flow to earth terminal 20 at last to source electrode 66, so far, finish the action of an ink droplet ejection.
Though above-mentioned ink gun structure only explains with the structure of monochrome printers, application of the present invention is not limited to the single-colour ink-jetting printer, also applicable the present invention in the ink gun structure of colour or polychrome.In addition, fluid ejection apparatus of the present invention also has other numerous possible application, for example: fuel injection system, cell classification, drug delivery system, spray printing photoetching technique, micro-injection propulsion system etc., do not exceed with inkjet printing.
Therefore, the whole chip circuit layout that the present invention only uses layer of metal layer and one deck polysilicon manufacture craft to be finished, it has following effect:
(1) ink gun structure of the present invention has not only lacked the expense of twice photomasks than the drive circuit of existing ink gun product, more can reduce processing charges, shorten Production Time and improve output speed because of having lacked twice photomask manufacture craft;
(2), will save the size of entire chip and increase chip (die) cutting quantity of full wafer wafer (wafer) because therefore the ink supply mode mode that do not adopt entire chip to punch can carry out circuit layout above manifold; And
(3) under identical chip area, method is provided with more spray orifice thus, to improve print speed.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (23)
1. liquid injection nozzle structure, this liquid injection nozzle structure includes:
One base material;
At least one bubble generator is located on this base material;
At least one function element is located on this base material, is used for controlling this bubble generator;
One by first conducting wire that polysilicon constituted; And
One second conducting wire is used for being electrically coupled between this function element and this bubble generator, and is electrically coupled between this function element and this first conducting wire.
2. liquid injection nozzle structure as claimed in claim 1 also includes a contact layer, is located between this first conducting wire and this second conducting wire, in order to this first conducting wire of electric coupling and this second conducting wire.
3. liquid injection nozzle structure as claimed in claim 1, wherein this second conducting wire also includes at least one liner (pad).
4. liquid injection nozzle structure as claimed in claim 1 also includes a dielectric layer, is located between this first conducting wire and this second conducting wire.
5. liquid injection nozzle structure as claimed in claim 1, wherein this function element is a transistor, and this transistor includes one source pole, a drain electrode and a grid.
6. liquid injection nozzle structure as claimed in claim 5, wherein this transistor is that (metal oxide semiconductor field effect transistor, MOSFET), and this grid is made of polysilicon a MOS field-effect transistor.
7. liquid injection nozzle structure as claimed in claim 6, wherein this grid and this first conducting wire be formed at same yellow-light etching process (photo-etching-process, PEP).
8. liquid injection nozzle structure as claimed in claim 1, wherein the material of this second conducting wire is selected from aluminium (Aluminum), gold (Gold), copper (Copper), tungsten (Tungsten) and Al-Si-Cu alloy (Alloys of Al-Si-Cu) and constitutes in the group any one.
9. liquid injection nozzle structure as claimed in claim 1, other includes:
At least one fluid cavity is located in this base material, and has respectively included at least one spray orifice in this fluid cavity and be communicated to this substrate surface; And
At least one manifold is located in this base material and is connected in this fluid cavity, in order to supply a fluid to this fluid cavity.
10. liquid injection nozzle structure as claimed in claim 9, wherein this bubble generator comprises that one first bubble produces member and one second bubble produces member, and this first bubble produces member and this second bubble and produces member and be located near above this corresponding spray orifice and the fluid cavity that should be corresponding, when the fluid cavity of correspondence is full of this fluid, this first bubble produces member can produce one first bubble with as a virtual air valve in this fluid cavity, after producing this first bubble, this second bubble produces member and produces one second bubble, so that this fluid of this fluid cavity is by this spray orifice ejection.
11. liquid injection nozzle structure as claimed in claim 9, wherein this liquid injection nozzle structure is used as the ink gun of an ink-jet printer, and this manifold is connected to an ink cartridges, and this fluid is the ink in this ink cartridges.
12. the manufacture method of a fluid ejecting head, this manufacture method includes the following step:
One base material is provided;
Form at least one bubble generator on this base material;
Form at least one function element on this base material;
Form one first conducting wire and this first conducting wire is made of polysilicon; And
Form one second conducting wire, and this second conducting wire is in order to being electrically coupled between this function element and this bubble generator, and is electrically coupled between this function element and this first conducting wire.
13. manufacture method as claimed in claim 12, other includes a step:
Form a contact layer, between this first conducting wire and this second conducting wire, in order to this first conducting wire of electric coupling and this second conducting wire.
14. manufacture method as claimed in claim 12, wherein this second conducting wire includes a liner (pad) in addition.
15. as the manufacture method as described in the claim 12, other includes a step:
Form a dielectric layer, between this first conducting wire and this second conducting wire.
16. manufacture method as claimed in claim 12, wherein this function element is a transistor, and this transistor includes one source pole, a drain electrode and a grid.
17. manufacture method as claimed in claim 16, wherein this transistor is a MOS field-effect transistor (MOSFET), and this grid is made of polysilicon.
18. manufacture method as claimed in claim 12, wherein this grid and this first conducting wire are formed at same yellow-light etching process (PEP).
19. manufacture method as claimed in claim 12, wherein the material of this second conducting wire is selected from any one that aluminium (Aluminum), gold (Gold), copper (Copper), tungsten (Tungsten) or Al-Si-Cu alloy (Alloysof Al-Si-Cu) constitute group.
20. manufacture method as claimed in claim 12, wherein this bubble generator includes one first bubble in addition and produces member and one second bubble generation member.
21. manufacture method as claimed in claim 20, other includes the following step:
Form a dielectric layer on this base material;
This base material of etching and this dielectric layer are to form a manifold and at least one being connected in the fluid cavity of this manifold; And
Form at least one spray orifice, and this spray orifice is between corresponding this first bubble produces member and this second bubble generation member, and is communicated to corresponding this fluid cavity, to spray the fluid in this fluid cavity.
22. manufacture method as claimed in claim 21, other includes the following step:
Form a low-stress material layer on this dielectric layer, and this bubble generator is formed on this low-stress material layer.
23. manufacture method as claimed in claim 21, wherein this fluid ejecting head is used as the ink gun of an ink-jet printer, and this manifold is connected to an ink cartridges, and this fluid is the ink in this ink cartridges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01143334 CN1205037C (en) | 2001-12-20 | 2001-12-20 | Injection nozzle structure and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01143334 CN1205037C (en) | 2001-12-20 | 2001-12-20 | Injection nozzle structure and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1426844A true CN1426844A (en) | 2003-07-02 |
| CN1205037C CN1205037C (en) | 2005-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01143334 Expired - Fee Related CN1205037C (en) | 2001-12-20 | 2001-12-20 | Injection nozzle structure and its manufacturing method |
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| Country | Link |
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| CN (1) | CN1205037C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101590728B (en) * | 2009-06-19 | 2010-11-10 | 厦门大学 | Self-aligning micro spray nozzle with control grid |
| CN103660574A (en) * | 2012-09-20 | 2014-03-26 | 研能科技股份有限公司 | Ink-jet head chip structure |
| JP2017024309A (en) * | 2015-07-24 | 2017-02-02 | キヤノン株式会社 | Liquid discharge head and liquid discharge device |
-
2001
- 2001-12-20 CN CN 01143334 patent/CN1205037C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101590728B (en) * | 2009-06-19 | 2010-11-10 | 厦门大学 | Self-aligning micro spray nozzle with control grid |
| CN103660574A (en) * | 2012-09-20 | 2014-03-26 | 研能科技股份有限公司 | Ink-jet head chip structure |
| JP2017024309A (en) * | 2015-07-24 | 2017-02-02 | キヤノン株式会社 | Liquid discharge head and liquid discharge device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1205037C (en) | 2005-06-08 |
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