CN1424794A - Semiconductor laser with continuously adjustable wavelength and preparation thereof - Google Patents
Semiconductor laser with continuously adjustable wavelength and preparation thereof Download PDFInfo
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- CN1424794A CN1424794A CN 03114725 CN03114725A CN1424794A CN 1424794 A CN1424794 A CN 1424794A CN 03114725 CN03114725 CN 03114725 CN 03114725 A CN03114725 A CN 03114725A CN 1424794 A CN1424794 A CN 1424794A
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Abstract
A semiconductor laser device with continuously adjustable wavelength is a quantum-dot one, which features that its self-organinized quantum dot array is such as prepared by focused ion beam sputter that the size of quantum dot is continuously changed in one-dimension direction. According to quantum domain-limiting effect, the wavelength can be continuously regulated.
Description
Technical field
The invention belongs to the photonics material technical field, be specifically related to continuously adjustable semiconductor laser of a kind of wavelength and preparation method thereof.
Background technology
Semiconductor laser has characteristics such as volume is little, operating temperature range is wide, excitation current is low, is widely used in the design of photoelectric device and photonic device.The Zh.I.Alferov of its inventor former Soviet Union and the H.Kroemer of the U.S. obtain Nobel prize for physics in 2000 for this reason.The wavelength of transmitted light of semiconductor laser has only one.Different photoelectric devices, photonic device need use the light of different wave length, correspondingly need the semiconductor laser of different wave length.Main at present by selecting different materials to develop the semiconductor laser of various wavelength, this brings very big inconvenience for the application of semiconductor laser, and because the discontinuity of solid energy level variations, for example: the optical wavelength of InAs quantum spot semiconductor laser is 1080nm; Nanometer Si laser be about 750nm etc., often can not accurately obtain needed optical wavelength.
Summary of the invention
The objective of the invention is to propose continuously adjustable semiconductor laser of a kind of wavelength and preparation method thereof, thereby easily, accurately satisfy the requirement of photoelectric device, photonic device design the different wave length light beam.
The continuously adjustable semiconductor laser of wavelength that the present invention proposes, by constituting successively as the lower part: bottom electrode, n N-type semiconductor N, semiconductor laser material, p N-type semiconductor N, upper electrode, split type electrode and power supply, its structure as shown in Figure 1.Wherein, be clipped in the laser material between p type and n N-type semiconductor N, its quantum dot has the characteristic of being stimulated, material surface has a plurality of parallel quantum dot bands, and the quantum dot in each quantum dot band is measure-alike, and evenly distributes, and the quantum dot size difference of each interband, and from left to right, the quantum dot size is continuous monotone variation (among Fig. 2 for from left to right increasing continuously), as shown in Figure 2.
Among the present invention, the parallel quantum dot band of semiconductor laser material surface generally can be 3-10, also can be more.Wherein, the size of quantum dot is generally less than 100nm.
Among the present invention, upper electrode is made up of a plurality of electrodes, the corresponding electrode of each quantum dot band.It is banded that electrode is, and its shape is with pairing quantum dot tape base this identical (more smaller), the position be in this quantum dot band directly over; Be electrical insulating material between each electrode, gap width is greater than the width of splitting the shape electrode.Bottom electrode is the metal level of continuous distribution.
The principle of the invention is as follows: because used semiconductive luminescent materials, its quantum dot has the stimulated emission characteristic.When splitting the shape electrode when from left to right mobile, this laser can be launched wavelength continually varying light beam, and this is to come from quantum confined effect.This effect point out when solids size little to a certain degree the time (as nano level quantum dot), the solid energy level spacing is determined by the size of quantum dot.And energy level spacing has determined radiative wavelength.Therefore,, just can regulate energy level spacing continuously, thereby obtain the continuously adjustable luminescent material of wavelength if can regulate the quantum spot size continuously.Among the present invention, luminescent material has the stimulated emission characteristic, and resulting is exactly the continuously adjustable laser material of wavelength.Owing to use the method for ion beam sputtering formation self-organized quantum dot array, can accurately control the size of quantum dot.
Among the present invention, above-mentioned semiconductor laser material can be one deck, as shown in Figure 1, also can be multilayer, promptly obtains the continuously adjustable quantum spot semiconductor laser of wavelength of multilayer, can increase luminous intensity greatly thus.Its number of plies is generally below 10.Its preparation can be carried out in conjunction with coating technique, promptly plates identical layer of semiconductor material on monolayer material, on this tunic, produces with the identical quantum dot array of following that tunic.This process can repeat to continue, till reaching the needed number of plies.Its side schematic view as shown in Figure 3.
The invention allows for the preparation method of the continuously adjustable quantum spot semiconductor laser of above-mentioned wavelength, concrete steps are as follows:
1, at first select semi-conducting material, its known quantum dot light emitting wavelength is near the necessary wavelength value.So-called quantum dot refers to the atomic group particle of size less than 100nm.
2, on this n shape semiconductor overdoping, surfacing (atom level or near atom level), plate a bed thickness and be about this semiconductive thin film 1 micron, smooth.The focused ion beam sputtering that film plating process can adopt the inventor to develop recently prepares the method for self-organized quantum dot array, it has the characteristics of accurate control quantum spot size, (M.Lu (Lu Ming), X.J.Yang, s.s.Perry, J.W.Rabalais, Applied Physics Letters, 80,2096 (2002)).Utilize this technology on the semiconductive thin film surface, prepare quantum dot array as shown in Figure 2.Under preparation condition permission situation, quantum dot band number is many more, and adjacent interband quantum dot size difference is more little, and then resultant Wavelength of Laser continuity is good more.The quantum dot band can be 3-10 on one deck.In addition, in conjunction with coating technique, can also prepare the laser material rete that as shown in Figure 3 multilayer has the quantum dot band.Generally speaking, the number of plies can be for below 10 layers.
3, have on the laser material of parallel quantum dot band on above-mentioned surface, cover one deck this p shape semiconductive thin film through overdoping.As shown in Figure 1.The effect of p type and n N-type semiconductor N is 1) as fiber waveguide, light is constrained in aspect between p type and the n N-type semiconductor N; 2) can improve the light emissive porwer by injecting charge carrier.
4, plate upper electrode and electrical insulating material at interval, plate the bottom electrode of continuous distribution again.
5, semiconductor film material two ends polishing is to form resonant cavity.
6, mix and split shape electrode and power supply, be assembled into laser.Fig. 1 is the laser of electric excitation.When splitting the shape electrode when from left to right mobile, this laser can be launched wavelength continually varying light beam.
Above-mentioned steps 2-4 carries out under vacuum environment.
The present invention prepares the continuously adjustable quantum dot laser film of wavelength material, can be guaranteed by following 4: 1) selected semi-conducting material, and its quantum dot is all known to have the stimulated emission characteristic; 2) the focused ion beam sputtering of our development prepares the method for self-organized quantum dot array, can accurately control the size of quantum dot; 3) quantum confined effect has guaranteed optical wavelength that quantum dot launches with quantum spot size monotone variation, and this is also proved by experiment; 4) quantum dot of focused ion beam sputtering method generation has proved nano crystal, and therefore the non-radiative recombination center that is caused by defective is very little to photoemissive influence.
Among the present invention, adopt inert ion bundle normal incidence (perpendicular to the sample surfaces) sample surfaces that focuses on, and, form quantum dot array shown in Figure 2 by regulating the ion sputtering parameter.The quantum dot mark is very little specifically can be decided according to the quantity of silicon egative film size and quantum dot band, generally can be bandwidth 2-3 millimeter, the about 4-6 millimeter of belt length, the about 0.8-1.2 millimeter of the spacing between the band, split the shape electrode width less than the spacing between the band, its length is identical with the quantum dot strip length.
Among the present invention, used semiconductor samples, its quantum dot is known to have a stimulated emission characteristic, as: InAs (1080nm), InGaAs (1100nm), Si (750nm), ZnS (620nm), CdSe (540nm), ZnSe (445nm) etc.Numerical value in the bracket is known quantum dot light emitting wavelength.That sample surfaces needs is smooth (atom level or near atom level).
Among the present invention, in conjunction with coating technique (as ion sputtering deposition, laser ablation deposition etc.), the continuously adjustable semiconductor laser material of wavelength of preparation multilayer.
Among the present invention, p type, n N-type semiconductor N are formed through overdoping by corresponding emitting semiconductor sample.
Make the continuously adjustable semiconductor laser of wavelength by the present invention, can reduce the selection workload of semiconductor laser, and can accurately obtain required wavelength, promoted the exploitation of photoelectric device, photonic device greatly.
Description of drawings
The continuously adjustable semiconductor laser structure diagram of Fig. 1 individual layer wavelength.
The continuously adjustable semiconductor laser material surface of Fig. 2 individual layer wavelength quantum dot band diagram.
The continuously adjustable quantum spot semiconductor material of Fig. 3 multilayer wavelength constitutes diagram.
Fig. 4 upper electrode insulation gap diagram.
Fig. 5 upper electrode structural diagrams.
Number in the figure: 1 is hearth electrode, and 2 is the n N-type semiconductor N, and 3 is the continuously adjustable quantum spot semiconductor laser material of wavelength, and 4 is the p N-type semiconductor N, and 5 is upper electrode, and 6 for splitting the shape electrode, and 7 is the clearance for insulation of upper electrode layer, and 8 is power supply.
Embodiment
Further describe the present invention below by example.
Embodiment: with the continuously adjustable 5 layers of quantum dot GaAs laser of preparation wavelength is example.
1. on n type GaAs, utilizing coating technique to plate thick is 1 micron GaAs film.
2. the focusing Ar ion beam that utilizes the plasma sputter rifle to produce, with normal incidence angle Sputtering GaAs film surface, beam current density requires greater than 150 microamperes/square centimeter, and the bundle spot is less than 0.5 millimeter, and the bundle spot is in 2 millimeters (perpendicular to quantum dot bands) * 5 millimeters (being parallel to the quantum dot band) scope interscans.About 7 centimetres of ion gun exit electrodes apart from sample.Sample temperature is controlled at less than 100 ℃.Control the size of quantum dot by regulating ion energy.The ion energy scope is at the 100-1500 electron-volt, or is decided according to the actual requirements.Pattern according to Fig. 1, from left to right prepare each quantum dot band, promptly use earlier minimum energy, prepare a leftmost quantum dot band, afterwards, be moved to the left 1 millimeter in sample, suitably regulate ion energy again, preparation second quantum dot band, this process continues, up to the preparation of finishing that quantum dot band of rightmost.At this moment, the GaAs thickness " has been cut " and has been thinned to the 0.1-0.3 micron.
3. on ground floor GaAs, plating thick again is 1 micron GaAs film, continues step 2 afterwards, and so circulation is till the 5th layer of GaAs forms as shown in Figure 1 quantum dot array.
4. on the 5th layer of GaAs, plating thick again is 0.5 micron GaAs film, with as protective layer.
5. on the 6th layer of GaAs, p type GaAs in the covering.
6. on p type GaAs, utilize template, plate SiO
2Insulation gap as upper electrode.As shown in Figure 4:
7. on p type GaAs, the template of utilization and step 6 negative and positive symmetry plates Ni/Au as upper electrode.As shown in Figure 5.
8. whole block material is under 400 ℃, and Fast Heating is 30 seconds in the air, to form transparent electrode.
9. multilayer GaAs film two ends polishing forms resonant cavity.
10. be assembled into the continuously adjustable multi-layer quantum point GaAs of wavelength laser by Fig. 1.
Claims (7)
1, the continuously adjustable semiconductor laser of a kind of wavelength, it is characterized in that by constituting successively: bottom electrode, n N-type semiconductor N, semiconductor laser material, p N-type semiconductor N, upper electrode, split type electrode and power supply as the lower part, wherein, be clipped in the laser material between p type and n N-type semiconductor N, its quantum dot has the characteristic of being stimulated, material surface has a plurality of parallel quantum dot bands, quantum dot in each quantum dot band is measure-alike, and be evenly distributed, and the quantum dot size difference of each interband, and from left to right, the quantum dot size is continuous monotone variation.
2, semiconductor laser according to claim 1, the quantum dot band that it is characterized in that the semiconductor laser material surface are 3-10.
3, semiconductor laser according to claim 1 and 2 is characterized in that the bandwidth 2-3 millimeter of said quantum dot band, belt length 4-6 millimeter, and the spacing between the band is the 0.8-1.2 millimeter.
4, semiconductor laser according to claim 1 and 2, the semiconductor laser number of layers that it is characterized in that is no more than 10.
5, semiconductor laser according to claim 1 is characterized in that upper electrode is made up of a plurality of electrodes, the corresponding electrode of each quantum dot band; It is banded that electrode is, and this is identical with pairing quantum dot tape base for its shape, the position be in this quantum dot band directly over; Be electrical insulating material between each electrode, gap width is greater than the width of splitting the shape electrode.
6, a kind of preparation method as the continuously adjustable semiconductor laser of the described wavelength of claim 1-5 is characterized in that concrete steps are as follows:
(1) at first select semi-conducting material, its known quantum dot light emitting wavelength is near the necessary wavelength value;
(2) on n shape semiconductor overdoping, surfacing, plate a bed thickness and be about semiconductor laser material film 1 micron, smooth, adopt the focused ion beam sputtering to prepare the method for self-organized quantum dot array, obtain the quantum dot band; The quantum dot band is 3-10 on one deck;
(3) have on the laser material of parallel quantum dot band on above-mentioned surface, cover one deck through doped p shape semiconductive thin film;
(4) plate upper electrode and electrical insulating material at interval, plate the bottom electrode of continuous distribution again;
(5) semiconductor film material two ends polishing is to form resonant cavity;
(6) mix and split shape electrode and power supply, be assembled into laser.
7, preparation method according to claim 6 is characterized in that in conjunction with coating technique, and the preparation multilayer has the laser material rete of identical quantum dot band, and the number of plies is below 10 layers.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255239A (en) * | 2010-03-23 | 2011-11-23 | 住友电气工业株式会社 | Driver circuit for tunable LD |
| CN104600564A (en) * | 2015-01-12 | 2015-05-06 | 中国科学院半导体研究所 | Method for manufacturing active area of broadband spectrum indium arsenide/indium phosphide quantum dot laser |
| CN106653567A (en) * | 2016-12-01 | 2017-05-10 | 中国工程物理研究院电子工程研究所 | Focused ion beam induction based preparation method for ordinal gallium arsenide quantum dots |
| CN107645123A (en) * | 2017-09-27 | 2018-01-30 | 华东师范大学 | A kind of active area structure design of multi-wavelength GaN base vertical cavity surface emitting laser |
-
2003
- 2003-01-03 CN CN 03114725 patent/CN1424794A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255239A (en) * | 2010-03-23 | 2011-11-23 | 住友电气工业株式会社 | Driver circuit for tunable LD |
| CN102255239B (en) * | 2010-03-23 | 2014-12-17 | 住友电气工业株式会社 | Driver circuit for tunable LD |
| CN104600564A (en) * | 2015-01-12 | 2015-05-06 | 中国科学院半导体研究所 | Method for manufacturing active area of broadband spectrum indium arsenide/indium phosphide quantum dot laser |
| CN106653567A (en) * | 2016-12-01 | 2017-05-10 | 中国工程物理研究院电子工程研究所 | Focused ion beam induction based preparation method for ordinal gallium arsenide quantum dots |
| CN107645123A (en) * | 2017-09-27 | 2018-01-30 | 华东师范大学 | A kind of active area structure design of multi-wavelength GaN base vertical cavity surface emitting laser |
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