CN1424565A - Nano-carbon based film field-emission pressure sensor - Google Patents
Nano-carbon based film field-emission pressure sensor Download PDFInfo
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- CN1424565A CN1424565A CN 03114812 CN03114812A CN1424565A CN 1424565 A CN1424565 A CN 1424565A CN 03114812 CN03114812 CN 03114812 CN 03114812 A CN03114812 A CN 03114812A CN 1424565 A CN1424565 A CN 1424565A
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Abstract
A pressure sensor using field emission of the nanometer carbon-based film belongs to the technology of micro-processes and sensors. This pressure sensor chiefly includes electron emitting cathode, anode, insulating layer, emitting chamber and electrode wires. The material for the electron emitting cathode is a nanometer carbon-based film. The electron emitting cathode and anode are connected through the insulating layer and bonded and encapsulated under a high vacuum environment. The field emitting chamber is formed between the electron emitting cathode and anode, and the electrode wires are out from the backs of the electron emitting cathode and anode. The electron emitting cathode of the pressure sensor of the invention comprises a nanometer carbon-based film, so that the sensor has the advantages of high sensitivity, high temperature resistance.
Description
Technical field
What the present invention relates to is a kind of pressure transducer, and particularly a kind of nano carbon-base film field-emission pressure sensor that utilizes the nano carbon-base film for electron emitting cathode belongs to microfabrication and sensor technical field.
Background technology
Microelectromechanical-systems (MEMS) has represented wide application prospect because of its excellent performance and small volume, and wherein the MEMS pressure transducer has been dominated the pressure transducer market of " greater than atmospheric pressure " at present.In many application facet, particularly in Aero-Space, national defence field, need the pressure transducer of excellent performances such as high sensitivity, high temperature resistant, radioresistance, wherein field-emission pressure sensor (field emission pressuresensor-FEPS) is considered to a kind of desirable pressure transducer.Existing field-emission pressure sensor with the MEMS fabrication techniques is to utilize miniature silicon tip as field-transmitting cathode, most advanced and sophisticated about tens nanometers of silicon tip, and the manufacture craft relative complex needs multiple tracks technology to finish.According to the emission characteristics of silicon materials, need the vacuum tightness height during device work, electronics emission threshold field is big, and silicon tip is easily oxidized, and sensor life-time is reduced.Unique and the excellent material behavior that the nano carbon-base membraneous material has at aspects such as geometric scale, electricity, chemistry, optics, machineries can obtain low threshold value, high current density, emission characteristics is stablized lasting cathode electronics emission characteristics, is a kind of desirable field ejected electron cold-cathode material.Comparing with existing miniature silicon tip field-emission pressure sensor, is negative electrode if adopt the nano carbon-base film, and field-emission pressure sensor can have following tangible advantage: (1) high sensitivity; (2) high temperature resistant; (3) radioresistance; (4) low-power consumption; (5) nano carbon-base negative electrode manufacturing process is simple; (6) sensor one-piece construction, technology are simple.
In existing MEMS field-emission pressure sensor research report, employing be that silicon tip awl and semiconductor nano silicon materials are as field-transmitting cathode.By literature search, Chen Shaofeng, Xia Shanhong were " liquid crystal with show magazine " (2002,17 volumes, 1 phase, the 7-16 page or leaf) reported on that a kind of monocrystalline silicon pointed cone of micromachining technology preparation that adopts is as emission cathode, the silicon deformation film is as the field-emission pressure sensor of anode, and the vacuum micro-electronics pressure sensor of the compound negative electrode of silicon tip array one sensitive thin film after the encapsulation has been done test.The silicon tip awl manufacturing process more complicated of using in above-mentioned technology, high temperature emission characteristics and mission life are all not as the nano carbon-base film.The nano carbon-base material has been subjected to researchist's extensive concern as field ejected electron emission cathode, and result of study proves that fully the nano carbon-base material has the electron emission characteristic that is better than other material.This technology is mainly used in flat panel display device and some luminous illuminating device fields at present.In present domestic and foreign literature and patent, yet there are no formal report with the nano carbon-base film as field-emission pressure sensor.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, a kind of nano carbon-base film field-emission pressure sensor is provided, make evident characteristics such as it has highly sensitive, Heat stability is good, radioresistance, consumed power is low, one-piece construction is simplified, manufacturing process is simple, and will improve the performance of the field-emission pressure sensor of present technology preparation comprehensively.The present invention is achieved by the following technical solutions, the present invention mainly comprises: electron emitting cathode, anode, dielectric isolation layer, emission cavity, contact conductor, electron emitting cathode links to each other by dielectric isolation layer with anode, under high vacuum environment, carry out the bonding encapsulation, form an emission cavity between electron emitting cathode and anode, contact conductor is drawn from the electron emitting cathode and the anode back side respectively.
Electron emitting cathode comprises: electronic emission material, film metal electrode and silicon base, electron emitting cathode adopts micromachining technology to be etched into the concave configuration of definite shape on silicon single crystal flake, and the area of following recess and the degree of depth are determined by factors such as the sensitivity of selected emissive material characteristic, physical dimension, pressure transducer and measurement ranges.The film metal electrode material can be metals such as Au, Pt, Al, Cr, Ti, Mo, W, Ni, Fe, Co, forms the film metal electrode with film deposition techniques such as sputter or evaporations in the recessed bottom in silicon emission of cathode chamber.If what silicon base was selected for use is the low-resistance silicon single crystal flake, then film metal electrode and silicon chip constitute electrode structure jointly.Draw for the ease of electrode, can form the membrane electrode lead-in wire with photoetching, sputter, evaporation, electro-plating method at the electron emitting cathode and the anode back side, contact conductor is directly drawn by membrane electrode.
Electronic emission material among the present invention is the nano carbon-base film, and it also can be other orthotype carbon nano-tube, blanket shape carbon nano-tube, carbon nano-fiber, carbon nano-particle, and their nano carbon-base materials such as mixed slurry.The nano carbon-base film adopts photoetching technique to be grown in selectively on the recessed film metal electrode.Adopt chemical vapor deposition (CVD) technology growth nano carbon-base film in the present invention, it has the nanometer of being fade-in emission tip, diameter is the 1-100 nanometer, material is mainly graphite-like and carbon nanoparticle (pipe, fiber, particle) mixed structure, one transition adhesive linkage is arranged between Nano pointed cone film and substrate, be used to improve between carbon-base film and the electrode adhesion with electrically contact.
Anode is to be made of the low-resistance silicon single crystal flake equally, anode physical dimension and emission of cathode chamber are complementary, comprise middle recessed deformable segment in the anode, the deformable thin slice is formed anodes centre's zone attenuate by body silicon etching method, and contact conductor also is directly to draw from the back side of anode.
Dielectric isolation layer is made of silicon dioxide or other high insulating medium material, the region surface that will contact in the time of can being deposited on negative electrode with anode linkage respectively with thermal oxide or other film deposition techniques.Under high vacuum environment,, can adopt methods such as static, fusion to encapsulate bonding according to the insulating material of selecting for use with behind negative electrode and the accurate aligning of anode.Just form deformable emission cavity behind the bonding between electron emitting cathode and the anode with certain vacuum degree.
Under electric field action, be in the electronic emission material emitting electrons on the negative electrode, the anode motion forms transmitter current under the guiding of electric field.If the distance between the moon-anode changes, cause that then the field intensity that is applied on the negative electrode changes, and causes the variation of transmitter current.Because anode adopts the membraneous material to external force sensitivity, easy deformation, does the time spent when anode is subjected to external force,, draw corresponding pressure value by measuring transmitter current according to the relation of transmitter current and distortion.
The present invention has substantive distinguishing features and marked improvement, compared with prior art, the nano carbon-base film that is adopted among the present invention has the following advantages: (1) has suitable nanometer emission form, diameter is the emission tip that is fade-in of 1-100 nanometer, easily forms highfield; (2) help material structure and the component that electronics is launched, be mainly graphite-like and carbon nano-tube mixed structure, the electronics effusion electric field of material itself is between 0.5-2.0 volt/micron, and the emit field threshold voltage is low than other field emmision material, conductive characteristic is good, helps the field emission of electronics; (3) the bonding enhancement layer of growth transition between Nano pointed cone film and substrate makes carbon-base film and electrode that good electrical contact be arranged, and has improved the effective field intensity and the launcher reliability of electronics emission; (4) because the nano carbon-base film belongs to the graphite-like structure, and the emission characteristics of nano carbon-base film is very stable, test shows that within 200 hours, the fluctuation of transmitter current only is 2%, and has stable temperature characterisitic, is very beneficial for device and at high temperature works; (5) adopt the nano carbon-base thin film preparation process to compare with other emissive material, preparation realizes large tracts of land, evenly growth simply, easily.The pressure transducer that constitutes as electron emitting cathode by above carbon-based nano film, not only have high sensitivity, high temperature resistant, radioresistance, advantage of low power consumption, and the one-piece construction of whole pressure transducer and preparation technology's simplification, cost reduces, and yield rate improves.
Description of drawings
Fig. 1 structural representation of the present invention
Embodiment
As shown in Figure 1, the present invention mainly comprises: electron emitting cathode 1, anode 2, dielectric isolation layer 3, emission cavity 4 and contact conductor 5, electron emitting cathode 1 material adopts the nano carbon-base film, electron emitting cathode 1 links to each other by dielectric isolation layer 3 with anode 2, under high vacuum environment, carry out the bonding encapsulation, form an emission cavity 4 between electron emitting cathode 1 and anode 2, contact conductor 5 is drawn from the electron emitting cathode 1 and anode 2 back sides respectively.
Comprise in the electron emitting cathode 1: electronic emission material 6, film metal electrode 7 and silicon base 8, adopt micromachining technology on silicon base 8, to be etched into a recessed structure, at recessed bottom deposit film metal electrode 7, film metal electrode 7 materials can be the metals of Au, Pt, Al, Cu, Cr, Ti, Mo, W, Ni, Fe, Co, electronic emission material 6 is grown directly upon on the film metal electrode 7, and is confined in film metal electrode 7 scopes.
Electron emitting cathode 1 is to be made by the nano carbon-base film, it also can be other orthotype carbon nano-tube, blanket shape carbon nano-tube, carbon nano-fiber, carbon nano-particle, and their nano carbon-base materials such as mixed slurry make, and the nano carbon-base film adopts photoetching technique to be grown in selectively on the recessed film metal electrode 7.The present invention adopts chemical vapour deposition technique growing nano carbon-base film, it has the nanometer of being fade-in emission tip, diameter is the 1-100 nanometer, and material is mainly graphite-like and the carbon nanoparticle comprises pipe, fiber, particle and mixed structure, and a transition adhesive linkage is arranged between Nano pointed cone film and substrate.
Electron emitting cathode 1 and anode 2 all select for use the low-resistance silicon single crystal material as silicon base, and the silicon sheet of the silicon base of electron emitting cathode 1 and anode 2 also is the ingredient of electron emitting cathode 1 and anode 2 electrodes simultaneously.
Form the membrane electrode lead-in wire at the electron emitting cathode 1 and anode 2 back sides with photoetching, sputter, evaporation, electric plating method, contact conductor 5 is directly drawn by the membrane electrode lead-in wire from the back side of electron emitting cathode 1.
Comprise middle recessed deformable segment in the anode 2, the deformable thin slice is formed anode 2 central area attenuates by body silicon etching method, and contact conductor 5 also is directly to draw from the back side of anode 2.
Dielectric isolation layer 3 is made of silicon dioxide or other high insulating medium materials, it is between electron emitting cathode 1 and anode 2, after with vacuum bonding method electron emitting cathode 1 and anode 2 being aimed at bondings, form an emission cavity 4 between electron emitting cathode 1 and the anode 2.
Claims (9)
1, a kind of nano carbon-base film field-emission pressure sensor, mainly comprise: electron emitting cathode (1), anode (2), dielectric isolation layer (3), emission cavity (4) and contact conductor (5), it is characterized in that: electron emitting cathode (1) material adopts the nano carbon-base film, electron emitting cathode (1) links to each other by dielectric isolation layer (3) with anode (2), under high vacuum environment, carry out the bonding encapsulation, form an emission cavity (4) between electron emitting cathode (1) and anode (2), contact conductor (5) is drawn from the electron emitting cathode (1) and anode (2) back side respectively.
2, nano carbon-base film field-emission pressure sensor according to claim 1, it is characterized in that electron emitting cathode (1) comprising: electronic emission material (6), film metal electrode (7) and silicon base (8), adopt micromachining technology on silicon base (8), to be etched into a recessed structure, at recessed bottom deposit film metal electrode (7), electronic emission material (6) is grown directly upon on the film metal electrode (7), and is confined in film metal electrode (7) scope.
3, nano carbon-base film field-emission pressure sensor according to claim 2 is characterized in that film metal electrode (7) material is one or several in Au, Pt, Al, Cu, Cr, Ti, Mo, W, Ni, Fe, the Co metal.
4, nano carbon-base film field-emission pressure sensor according to claim 1 and 2, it is characterized in that electron emitting cathode (1) is to be made by the nano carbon-base film, perhaps by other orthotype carbon nano-tube, blanket shape carbon nano-tube, carbon nano-fiber, carbon nano-particle, and their mixed slurry nano carbon-base material makes, and the nano carbon-base film adopts photoetching technique to be grown in selectively on the recessed film metal electrode (7).
5, according to claim 1 or 4 described nano carbon-base film field-emission pressure sensors, it is characterized in that adopting chemical vapour deposition technique growing nano carbon-base film, it has the nanometer of being fade-in emission tip, diameter is the 1-100 nanometer, material is mainly graphite-like and the carbon nanoparticle comprises pipe, fiber, particle and mixed structure, and a transition adhesive linkage is arranged between Nano pointed cone film and substrate.
6, nano carbon-base film field-emission pressure sensor according to claim 1, recessed deformable segment in the middle of it is characterized in that comprising in the anode (2), the deformable thin slice is formed anode (2) central area attenuate by body silicon etching method.
7, nano carbon-base film field-emission pressure sensor according to claim 1, it is characterized in that electron emitting cathode (1) and anode (2) all select for use the low-resistance silicon single crystal material to make, the silicon base of electron emitting cathode (1) also is electron emitting cathode (a 1) electrode simultaneously, the electron emitting cathode (1) and anode (2) back side form the membrane electrode lead-in wire with photoetching, sputter, evaporation, electric plating method, and contact conductor (5) is directly drawn by the membrane electrode lead-in wire from the back side of electron emitting cathode (1) and anode (2).
8, nano carbon-base film field-emission pressure sensor according to claim 1 is characterized in that dielectric isolation layer (3) is made of silicon dioxide or other high insulating medium materials, and it is between electron emitting cathode (1) and anode (2).
9, nano carbon-base film field-emission pressure sensor according to claim 1, after it is characterized in that electron emitting cathode (1) and anode (2) being aimed at bonding, form a field emission cavity (4) between electron emitting cathode (1) and the anode (2) with vacuum bonding method.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031148123A CN1180230C (en) | 2003-01-09 | 2003-01-09 | Nano-carbon based film field-emission pressure sensor |
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| CNB031148123A CN1180230C (en) | 2003-01-09 | 2003-01-09 | Nano-carbon based film field-emission pressure sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336192C (en) * | 2005-08-18 | 2007-09-05 | 上海交通大学 | Method for bonding nanometer material on metal electrode |
| CN102175381A (en) * | 2011-03-10 | 2011-09-07 | 上海交通大学 | Pressure sensor and preparation method thereof based on composite plating of carbon nano tube and metallic copper |
| CN104925745A (en) * | 2015-04-28 | 2015-09-23 | 歌尔声学股份有限公司 | Cavity forming method and manufacturing method of sensor chip, chip and electronic equipment |
| CN106340578A (en) * | 2015-07-09 | 2017-01-18 | 普因特工程有限公司 | Chip substrate with plating layer and chip package using same |
| CN107036738A (en) * | 2017-06-01 | 2017-08-11 | 黄昱 | A kind of blood platelet Micro-force sensor of the elastic film variable capacitance based on nanometer technique |
| CN107192747A (en) * | 2017-07-24 | 2017-09-22 | 徐林 | A kind of micro-nano biological detection chip of variable capacitance and its processing method |
| CN108871177A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | The ionic strain transducer and its preparation method of carbon nano pipe array electrode and application |
| CN109160482A (en) * | 2018-09-17 | 2019-01-08 | 苏州海思纳米科技有限公司 | Ion strain transducer and the preparation method and application thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108332889B (en) * | 2017-01-20 | 2020-03-06 | 中国科学院物理研究所 | Aerogel pressure sensor |
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2003
- 2003-01-09 CN CNB031148123A patent/CN1180230C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336192C (en) * | 2005-08-18 | 2007-09-05 | 上海交通大学 | Method for bonding nanometer material on metal electrode |
| CN102175381A (en) * | 2011-03-10 | 2011-09-07 | 上海交通大学 | Pressure sensor and preparation method thereof based on composite plating of carbon nano tube and metallic copper |
| CN102175381B (en) * | 2011-03-10 | 2013-02-27 | 上海交通大学 | Pressure sensor and preparation method thereof based on composite plating of carbon nano tube and metallic copper |
| CN104925745A (en) * | 2015-04-28 | 2015-09-23 | 歌尔声学股份有限公司 | Cavity forming method and manufacturing method of sensor chip, chip and electronic equipment |
| CN106340578A (en) * | 2015-07-09 | 2017-01-18 | 普因特工程有限公司 | Chip substrate with plating layer and chip package using same |
| CN108871177A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | The ionic strain transducer and its preparation method of carbon nano pipe array electrode and application |
| CN108871177B (en) * | 2017-05-08 | 2020-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ion type strain sensor of carbon nano tube array electrode and preparation method and application thereof |
| CN107036738A (en) * | 2017-06-01 | 2017-08-11 | 黄昱 | A kind of blood platelet Micro-force sensor of the elastic film variable capacitance based on nanometer technique |
| CN107192747A (en) * | 2017-07-24 | 2017-09-22 | 徐林 | A kind of micro-nano biological detection chip of variable capacitance and its processing method |
| CN107192747B (en) * | 2017-07-24 | 2023-12-15 | 梁鑫 | Variable capacitance type micro-nano biological detection chip and processing method thereof |
| CN109160482A (en) * | 2018-09-17 | 2019-01-08 | 苏州海思纳米科技有限公司 | Ion strain transducer and the preparation method and application thereof |
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| CN1180230C (en) | 2004-12-15 |
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