CN1423916A - High frequency plasma source - Google Patents
High frequency plasma source Download PDFInfo
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- CN1423916A CN1423916A CN 01808088 CN01808088A CN1423916A CN 1423916 A CN1423916 A CN 1423916A CN 01808088 CN01808088 CN 01808088 CN 01808088 A CN01808088 A CN 01808088A CN 1423916 A CN1423916 A CN 1423916A
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- plasma supply
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Abstract
The invention relates to a high frequency plasma source, comprising a support element, on which a magnetic field coil arrangement (4), a gas distribution system (6) and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network (2) is arranged within the plasma source.
Description
The present invention relates to a device that is used for effectively encouraging low pressure gaseous discharge (plasma).Described device provides a kind of and extracts from the high density low pressure plasma, the plasma beam of height ionization and charge compensation.The performance (such as composition of ion energy, ion current density, ion beam) of can fine control and regulating plasma beam.In addition selectively, can extract a kind of particle flux of negative or positive in conjunction with the system that is used for selective extraction electronics or ion.
Plasma system has great importance for the preparation and the processing of the solid material in the high-tech sector.The special plasma reactor of paying close attention to the plasma beam that is to generate quasi-neutrality.The plasma reactor that below is also referred to as plasma source can be used on the extremely different application of plasma process.The deposition of thin layer and growth, atomizing, etching, cleaning or the like all belong to this scope.Plasma beam is made up of ion and (negative electrical charge) electronics of positive charge with the share that equates, and is electroneutral therefore.The quasi-neutrality of plasma beam allows the coating and the surface treatment of electrical insulating material, and does not need to be used for the additional structure of plasma beam neutralization.
Current application usually requires the ion of the accurate scalable ion energy of having of high share, so that guarantee to form desirable chemical bond.Therefore for (diamond-like carbon DLC) or deposit hard layer in the cubical boron nitride, need have the Ionized plasma beam of height of about 100eV ion energy, so that make sp from similar adamantine carbon
3The share maximization of key.Form threshold in order to surmount nucleus, as the layer continuous, need a kind of deposition process that relates to high energy too in order to guarantee to seal.Requirement to high as far as possible ion share means, when low pressure, typically 10
-3Mbar generates plasma down.The excitation that this requires the magnetic field of plasma to support again is so that avoid by the loss that recombinant caused on the wall of plasma container.Effective excitation of plasma is the basic premise of higher ion volume density and high deposition rate or etch rate, expense favourable process time so that therefore can guarantee short.In order to guarantee to have the processing of high efficiency economy, the ability that plasma source can be processed big as far as possible Substrate Area is very important.
Exist some to be used for the various systems of the plasma aid in treatment surface of solids now.The part of these systems is used to generate plasma based on the alternating field with high-frequency electrical.Great majority in these systems have minus plate and positive plate, and wherein, capacitive ground warp negative electrode is with high frequency power feed-in plasma.Between electrode, form the bias voltage that its size depends on the electrode area and the rf amplitude that applies.In order to make the ion bombardment maximization, substrate is placed on the negative electrode.The shortcoming of capacitive coupling radio frequency system is owing to high frequency power is imported the very small plasma density that produces in the plasma by poor efficiency ground.10
-3Under the canonical process pressure in the mbar scope, incide particle flux on the substrate and only contain 5% the high energy particle of having an appointment.Many practical applications of this dominant processing of energetic ion that do not meet the demands.Another shortcoming of conventional RF plasma supply is broad ion energy distribution.Be added with more small growth rate outside these systems, wherein, power data yet depends on environmental condition very consumingly.
U.S. patent 5,017, and 835 have illustrated a kind of radio frequency ion source that is used to generate the large-area ionic bundle, wherein, inductively high-frequency energy are imported plasma.In the tubular plasma container that is clipped between a carrier board and the shut, this provenance has been utilized electronics-cyclotron-wave resonance excitation of plasma.Tunable intermediate circuit is connected radio-frequency generator with the load circuit coil.To the D.C. magnetic field a little less than one of the plasma stack.The ion-optic system of being made up of a plurality of electrodes that is used for The ion extraction is arranged in carrier board.
U.S. patent 5,156, and 703 have illustrated and a kind ofly are used for surface deterioration and structuring, are used to make surface doping and are used for by generate the method for superficial layer from the particle bombardment of plasma.As getting off to extract the plasma beam of quasi-neutrality, promptly apply high frequency voltage to extracting on electrode and other the electrode from the low pressure plasma that generates by electric field and magnetic field, low pressure plasma extracts between electrode and other the electrode at this.The amplitude decision energy of ions of extracting of the high frequency voltage that between plasma and extraction electrode, descends.
M.Weiler and other people are at Applied Physics document Applied Physics Letters volume 64 (1994), the 2797-2799 page or leaf, with at physical comment Physical Review B, volume 53 (1996), in the 1594-1608 page or leaf, illustrated that the plasma source by plasma discharge generation high frequency (13.56MHz), capacitively coupled, that magnetic field is auxiliary comes the carbon of deposited amorphous shape tetrahedron combination.This provenance is by the electrode of a big removable high frequency feed, and a less power electrode that is connected on the earth potential is formed.Give the hyperbola magnetic field of a static state of described plasma stack.Between the power supply of electrode, plasma and ground connection, form positive bias voltage.Can the described electrode of vertical moving.At this moment, its effective area and formed bias voltage are changing equally.Therefore can regulate energy of ions through this change, and not change the power of gas pressure or feed-in.Innovation on this provenance is, is not by voltage is applied on the substrate, but by inner bias voltage may command or regulate energy of ions.As on all capacitively coupled plasma sources, in addition in this system 10
-3Plasma density under the mar pressure is very small.
Roll up 72 (1998) at Applied Physics document Applied PhysicsLetters by M.Weiler and other people, a kind of improved form of described plasma source has been described in the 1314-1316 page or leaf.Static magnetic field by having horizontal stack, high frequency (13.56MHz), the plasma discharge of induction coupling generates plasma beam.To the electrode that is positioned at the plasma back, can change ion energy by applying rf amplitude.
U.S. patent 5,858, and 477 comprise the method and apparatus that is used for by the carbon of deposited amorphous shape tetrahedron combination preparation wear-resistant layer on storage medium.One in these systems has illustrated a kind of plasma source, wherein, surround volume of plasma by antenna, and therefore encourage plasma by high-frequency induction, arranged that one is extracted ion beam, extraction electrode the opening of volume of plasma on by the capacitive coupling from plasma towards the coupling electrode of volume of plasma and one.For the homogenizing of plasma beam, arranged the coil of the transverse magnetic field that is used to generate rotation around volume of plasma.
A problem of conventional plasma source is to regulate ion energy and ion current density independently of one another.An other problem of conventional high frequency source need to be the high-frequency resistance matching network of a separation.High-frequency matching network this with the power of radio-frequency generator through cable feed-in exciting electrode, produce considerable power loss thus.In addition, in common plasma source, can not regulate the amplitude of the high frequency voltage in the high-frequency matching network and the amplitude of high-frequency current independently of one another.Therefore can not resemble the resonance effect electronics-cyclotron-wave resonance or the Landau decay with the mode utilization of the best.
The present invention is based on of task is to improve diversity, the functional and efficient of plasma source, that is: can control ion energy and ion current density independently of one another, high plasma density and high resolution or degree of ionization are provided simultaneously, and reduce power loss.
Can be used for generating the plasma beam of quasi-neutrality or the RF plasma supply of ion beam is made up of a carrier element by the present invention, on this carrier element, arranged the field coil device that is used to generate transverse magnetic field, be used for working gas is charged into the gas distributing system of volume of plasma, with the unit that is used to extract plasma beam, wherein, be used for the high-frequency matching network of generator power feed-in plasma additionally is positioned at the inside of plasma source, this high-frequency matching network is usually by a switching circuit with any variable capacitor and high frequency air core coil, and by having capacitor, the high frequency air core coil, form with the secondary switching circuit of at least one exciting electrode, wherein, two switching circuits are through the induction magnetic flux of high frequency air core coil with to add capacitive ground coupled to each other.
On plasma source of the present invention, can regulate ion energy, ion current density, resolution and degree of ionization independently of one another.Described source is used for energizing gas discharge with high frequency (typically 13.56 or 27.12MHz).At this moment, in the auxiliary plasma in magnetic field, mainly high frequency power is fed in the plasma through the mechanism of responding to and utilize electronics-cyclotron-wave resonance or Landau to decay.
The high-frequency matching network that is used to reduce power loss in addition is the part of the integration of plasma source, and promptly it is arranged in the inside in source, and making no longer needs the matching network that adds.It allows through bigger scope and is independent of ion current density to regulate ion energy.This can realize continuously when adopting variable capacitor in secondary circuit.So design high-frequency matching network, feasible independently control and the controllability that has ensured high-frequency current amplitude and high frequency voltage amplitude.This has realized the accurate selection for the necessary condition of excitation mechanism (ECWR or Landau), so that can encourage plasma with high efficient respectively.Plasma source of the present invention generates until 10
13Cm
3Very high plasma density, provide until 50% very high degree of ionization and have at diatomic molecule, for example resembling can be until 80% very high resolution under the situation of oxygen, nitrogen or hydrogen.In addition, exist the possibility that is independent of ion current density and can regulates ion energy in 10 to about 1000eV scope continuously.Therefore plasma source of the present invention generates the plasma beam that an ion energy, ion current density and plasma beam composition etc. have the height ionization charge compensation of good predetermined characteristic.Additional guaranteed plasma beam, also resemble the uniformity of particle free.Therefore when having guaranteed plasma source long stability and thereby the handleability of processing, and even very long life-span between the maintenance phase.
In the German patent application with Patent Office's document number 100 08 485.0 " high-frequency matching network " of CCR responsibility Co., Ltd, describe such matching network in detail.
Both can be within vacuum, also can outside vacuum, arrange the exciting electrode of the plasma excitation of the induction that is used to unite and capacitive.It should be complementary with the geometry of desirable plasma beam aspect shape, size and the layout.Also can adopt preferentially with 10 and 100mm between spacing be arranged in juxtaposition in a vacuum a plurality of exciting electrodes each other.Usually in the case through oneself matching network and a matching network that separates to each electrode feed.Therefore exist and in each volume of plasma, generate different plasma, and the possibility of controlling and regulating the beam performance of these plasmas to a great extent independently of one another.
Only adopt the exciting electrode of its umber of turn n≤1.Make the inductance of exciting electrode thus, and thereby the rf amplitude that descends through plasma between exciting electrode and ground is minimized.Therefore the main power input that inductively realizes leading in the plasma.The electric capacity power that carries out inserting continuously through the circuit connection of the present invention of matching network is imported then.
Usually make exciting electrode by tubing or wire material.If should be applied to additional rf amplitude on the plasma-improve ion energy by one between exciting electrode and ground by the capacitive coupling of leading to plasma-promptly now, then maximum accessible ion energy then remains quite little.Can not reach higher ion energy by the exciting electrode of making by tubing or wire material.The edge area of volume of plasma is usually by contact area, and also is made up of the area of carrying high frequency.Carry the area of high frequency big more to the ratio of contact area, maximum accessible ion energy is then high more.Therefore case shape or banded implement exciting electrode is so that replace contact area as much as possible by the area of carrying high frequency.At this moment, the height of case is equivalent to the length of volume of plasma at most.The shape that described electrode can have the shape of plate or not seal case, wherein, this case is preferably annular, fan-shaped, square or rectangle on the cross section.
By high frequency power feed-in plasma.In order to improve the efficient of power feed-in, give plasma usually, also to transverse magnetic field that is used for resonant excitation of exciting electrode stack.Can generate described magnetic field by the field coil of arranging around volume of plasma.These field coils both can be arranged in outside the vacuum, also can be arranged within the vacuum, and be complementary with the geometry of volume of plasma.If move coil with direct current, then magnetic field is static.The control coil arranged side by side that staggers on can be when moving by the time with alternating current, or reach the rotation of magnetic field around the longitudinal axis of plasma source by the electric current of phase shift.Described magnetic field then is dynamic.
Through the conversion in magnetic field can be optionally through the generation of standing wave, or carry out the resonant excitation of plasma by the condition of resonance that satisfies the Landau decay.The variation of the magnetic field intensity in plasma space, the refractive index n of plasma can change between 50 and 500 usually through getting over bigger scope.In order to satisfy the Landau condition of resonance, electromagnetic phase velocity C
PLMust with the average speed V of plasma electron
eConsistent.By refractive index decision phase velocity, and through electron temperature T
eThe average speed of decision electronics.Must be suitable for C
PL=C
v/ n=(KT
e/ m
e)
1/2
Static transverse field is uneven through getting over volume of plasma.Therefrom draw the local different launching efficiency in volume of plasma, and produce local different plasma density.The plasma beam that is extracted thereby also be uneven.The last coating that for example is directed at high bed thickness fluctuation.Therefore the inhomogeneities that on substrate, reflects transverse magnetic field.Can optimize the inhomogeneities of excitation by adopting dynamic magnetic field.Arrange that then at least three field coils around the gas ions volume replace two field coils (static state).Can (f＜100Hz) be used for the driving of coil, just as follows, makes that the electric current in two coils arranged side by side is phase shift mutually with alternating current.Therefore reach the rotation of magnetic field around the plasma source longitudinal axis.This rotation in magnetic field is through a swing circle integration ground or be directed at the even excitation of plasma with adding up.Additionally carry out the inhomogeneity mixing of improvement of plasma.
If second layer of following layout on inner most coil layer is about to a hub of a spool from the second layer and is positioned on the end from a coil pair of innermost layer, then reach the additional uniformity of improving the plasma beam that extracts.
In an ideal way in RF plasma supply on space and geometry field coil coordinated with each other, exciting electrode and gas charge into system.
In order to extract charged particle (being generally ion and/or electronics) from plasma, the unit that is used to extract plasma beam that is also referred to as extraction system can be arranged in the opening of volume of plasma.Under the simplest situation, can adopt a kind of aperture, promptly have the flat board of an opening, the feasible outflow that has guaranteed plasma.A kind of modification is to adopt grid, network or the metal grill that is positioned on the earth potential.Therefore from plasma potential and earthy difference, draw and from the source, flow out energy of ions.Can change the current potential of plasma by the rf amplitude that is applied to the electric alternating field on the exciting electrode.Therefore can change the kinetic energy of ion by the high frequency voltage amplitude.
Below exemplarily by description of drawings the present invention:
Fig. 1 has showed the schematic configuration of plasma source,
Fig. 2 a-j has showed the possible shape and the layout of exciting electrode,
Fig. 3 a-c has showed the sectional view by exciting electrode,
Fig. 4 a-n has showed the possible shape and the layout of field coil,
Fig. 5 has showed the ion current density as the function of the magnetic field intensity that is used to represent Landau decay resonance,
Fig. 6 a, b have showed the different layout of plasma beam extraction system.
The principle structure of plasma source has been shown in the accompanying drawing 1.Plasma source is made up of different primary clusterings.It is made up of a carrier element (1), has arranged device, a unit and a gas distributing system (6) that is used to extract plasma beam (5) that is used to generate a plurality of field coils (4) of transverse magnetic field on this carrier element (1).In addition, a high-frequency matching network (2) that is used for mating with the impedance phase of the affiliated exciting electrode (3) that generates plasma is positioned at the plasma source inside that is connected with carrier element (1) equally.Exciting electrode (3) is arranged in a vacuum, and is connected with the major part of matching network through vacuum-flow through hole (9).Working gas passes plasma source through gas distributing system (6) and charges in the volume of plasma.Under the state of assembling and after coordinating all component, plasma source is a compact unit on the housing wall that can flange be connected to vacuum tank (7).The radio-frequency generator (8) that needs a frequency to be positioned on the 13.56MHz is used for the power feed-in.So carry out the control of field coil (4), make to generate the magnetic field that rotates.
The difformity and the layout of exciting electrode have been shown in the accompanying drawing 2.The shape of exciting electrode and size are complementary with the cross section of desirable plasma beam.Fan-shaped exciting electrode (accompanying drawing 2a) generates the beam profile of circle, and foursquare exciting electrode (accompanying drawing 2b) generates foursquare beam profile.(the accompanying drawing 2c) of rectangle and the beam profile that is embodied as the exciting electrode generation wire of band (accompanying drawing 2d).In diversified mode, only can locate the exciting electrode (accompanying drawing 2e-j) of exemplary expression each other side by side with 10 to 100mm fine pitch.
Accompanying drawing 3a has showed that 5mm is wide and the profile of the case shape exciting electrode that 50mm is high.Accompanying drawing 3b has showed a modification of exciting electrode, and wherein, a pipeline (10) is connected with it.Accompanying drawing 3c has showed one of exciting electrode other modification, and wherein, this exciting electrode itself has been equipped with a cavity (12).Can use liquid medium in order to cool off, the inside or the cavity (12) of preferred water flushing pipe (11).
Accompanying drawing 4 has been showed the possible shape and the layout of the field coil that is used to generate transverse field.
Accompanying drawing 5 is with as the ion current density diagrammatic sketch of the function of field coil electric current and the resonance characteristic of having showed described source.
Accompanying drawing 6 has been showed the different scheme of extraction system.Under the simplest situation, can adopt flat board (accompanying drawing 6a) with opening (13).Accompanying drawing 6b has showed a kind of metal grill (14) that is positioned on the earth potential.
The reference symbol table
1 carrier element
2 high-frequency matching networks
3 exciting electrodes
4 field coil devices
5 are used for extracting the unit of plasma beam
6 gas distributing systems
The housing wall of 7 vacuum tanks
8 radio-frequency generators
9 vacuum-flow through holes
10 pipelines
11 pipe interiors
The cavity of 12 exciting electrodes
13 eyelet apertures
14 grids, network or metal grill
Claims (26)
1. RF plasma supply has a carrier element (1), has arranged on this carrier element (1)
-one field coil device (4),
-one gas distributing system (6) and
-one unit that is used to extract plasma beam (5) is characterized in that,
Also have a high-frequency matching network (2) to be positioned at the inside of ion body source in addition.
2. press the RF plasma supply of claim 1, it is characterized in that, described high-frequency matching network (2) is by a switching circuit with an any and variable capacitor and a high frequency air core coil, and the secondary switching circuit with a capacitor, a high frequency air core coil and at least one exciting electrode is formed, wherein said switching circuit is coupled each other through the induction magnetic flux of high frequency air core coil, and also capacitive ground coupling in addition.
3. by claim 1 or 2 RF plasma supply, it is characterized in that, can capacitive and the coupling of inductive plasma body between make one's options.
4. by the RF plasma supply of one of claim 1 to 3, it is characterized in that, can be continuously capacitive and the coupling of inductive plasma body between make one's options.
5. by the RF plasma supply of one of claim 1 to 4, it is characterized in that at least one exciting electrode (3) is arranged in a vacuum.
6. by the RF plasma supply of one of claim 1 to 5, it is characterized in that shape, size and the layout of described exciting electrode (3) and the geometry of desired plasma beam are complementary.
7. by the RF plasma supply of one of claim 1 to 6, it is characterized in that described exciting electrode (3) has the shape of plate.
8. by the RF plasma supply of one of claim 1 to 7, it is characterized in that described exciting electrode (3) has the shape of untight case.
9. by the RF plasma supply of claim 8, it is characterized in that described untight case is annular on the cross section.
10. by the RF plasma supply of claim 8, it is characterized in that described untight case is fan-shaped on the cross section.
11. the RF plasma supply by claim 8 is characterized in that described untight case is foursquare on the cross section.
12. the RF plasma supply by claim 8 is characterized in that described untight case is a rectangle on the cross section.
13. the RF plasma supply by one of claim 1 to 12 is characterized in that, a plurality of described exciting electrodes (3) with 10 and 100mm between spacing be arranged in juxtaposition in a vacuum each other.
14. the RF plasma supply by one of claim 1 to 13 is characterized in that a transverse magnetic field and described exciting electrode (3) are overlapping.
15. the RF plasma supply by claim 14 is characterized in that, in order to generate transverse magnetic field, described field coil (4) is to arrange around plasma.
16. the RF plasma supply by claim 15 is characterized in that described field coil (4) is arranged in outside the vacuum.
17. the RF plasma supply by claim 15 is characterized in that described field coil (4) is arranged within the vacuum.
18. the RF plasma supply by one of claim 15 to 17 is characterized in that, described field coil (4) is complementary with the geometry of volume of plasma.
19. the RF plasma supply by one of claim 15 to 18 is characterized in that, is static with described field coil of DC operation (4) and described magnetic field.
20. the RF plasma supply by one of claim 15 to 18 is characterized in that, is dynamic with described field coil of ac operation (4) and described magnetic field, and/or rotation.
21. the RF plasma supply by claim 20 is characterized in that, the described dynamic magnetic field of following generation makes by magnetic field adjacent coil (4) to described electric current phase shift.
22. the RF plasma supply by one of claim 1 to 21 is characterized in that, described field coil (4), described exciting electrode (3) and described gas distributing system (6) spatially with geometry on coordinated with each other.
23. the RF plasma supply by one of claim 1 to 22 is characterized in that, arranges an extraction system (5) before the opening of volume of plasma.
24. the RF plasma supply by claim 23 is characterized in that described extraction system (5) is made up of an eyelet aperture (13).
25. the RF plasma supply by claim 23 is characterized in that described extraction system is made up of grid, network or a metal grill (14).
26. the high-frequency plasma of one of claim 1 to 25 is used to generate the purposes of the plasma beam of quasi-neutrality.
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10008482.6 | 2000-02-24 | ||
| DE10008485.0 | 2000-02-24 | ||
| DE10008483.4 | 2000-02-24 | ||
| DE2000108482 DE10008482A1 (en) | 2000-02-24 | 2000-02-24 | High frequency plasma source with support for field coil, gas distribution and plasma jet extraction, has additional high frequency matching network |
| DE2000108483 DE10008483A1 (en) | 2000-02-24 | 2000-02-24 | High frequency plasma source with support for field coil, gas distribution and plasma jet extraction, has additional high frequency matching network |
| DE2000108484 DE10008484C2 (en) | 2000-02-24 | 2000-02-24 | Coolable high-frequency air coil |
| DE10008484.2 | 2000-02-24 | ||
| DE2000108485 DE10008485B4 (en) | 2000-02-24 | 2000-02-24 | RF matching network |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1423916A true CN1423916A (en) | 2003-06-11 |
Family
ID=34199039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01808088 Pending CN1423916A (en) | 2000-02-24 | 2001-02-21 | High frequency plasma source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1423916A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037791B (en) * | 2008-05-21 | 2013-08-21 | 夏普株式会社 | Plasma processing apparatus |
-
2001
- 2001-02-21 CN CN 01808088 patent/CN1423916A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037791B (en) * | 2008-05-21 | 2013-08-21 | 夏普株式会社 | Plasma processing apparatus |
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