CN1417375A - Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition - Google Patents
Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition Download PDFInfo
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- CN1417375A CN1417375A CN 02155431 CN02155431A CN1417375A CN 1417375 A CN1417375 A CN 1417375A CN 02155431 CN02155431 CN 02155431 CN 02155431 A CN02155431 A CN 02155431A CN 1417375 A CN1417375 A CN 1417375A
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- magnetic field
- permanent magnet
- sediment chamber
- magnet unit
- electron cyclotron
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- 238000005229 chemical vapour deposition Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000013049 sediment Substances 0.000 claims description 30
- 238000000427 thin-film deposition Methods 0.000 claims description 14
- 238000012216 screening Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 238000010079 rubber tapping Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 238000004804 winding Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to microwave low temperature plasma technology. The equipment includes microwave source, vacuum sealing, film depositing and vacuum pump systems and magnetic field generating and gas path and gas controlling parts. The magnetic field winding is set around the resonant cavity wall to generate axial magnetic field configuration required by the electronic cyclotron resonance. The present invention is characterized by the permanent magnet unit, which is set over the sample bench to generate homogeneous axial magnetic field in the depositing chamber, and has small volume and thus great moving space in the depositing chamber and great axial magnetic field change. The axial magnetic field configuration is formed and regulated through the combination of the winding and the permanent magnet unit, and the magnetic field configuration results in high film depositing speed.
Description
Technical field
The method and the device that improve electron cyclotron resonance chemical vapor deposition speed belong to the microwave low temperature plasma technical field.
Background technology
The high speed deposition film is the important development direction that microwave plasma is used.Electron cyclotron resonace (ECR) plasma body is the novel microwave plasma body that grows up the nearly more than ten years.Because characteristics such as its degree of ionization height, electrodeless pollution are subject to people's attention day by day.Yet,, cause electron cyclotron resonace CVD thin film deposition speed to be paced up and down at lower level because prior art remains in some problems for control Ecr plasma axial magnetic field position shape.
The axial magnetic field position shape of vacuum deposition chamber all plays crucial effects for the form and the thin film deposition speed of control plasma body.Present microwave electron cyclotron resonance chemical vapour deposition both domestic and external (MWECR-CVD) device adopts incompatible generation electron cyclotron resonace of coil or coil assembly and the required axial magnetic field of thin film deposition substantially.Because the action of a magnetic field scope that coil produced is bigger, if will regulate magnetic field configuration with several coils simultaneously, then must take bigger space.The electron cyclotron resonace device that people (Thin Solid Films 390 2001 208-211) such as the calendar year 2001 Akira of Kyushu University Yonesu are adopted has adopted six coils, and coil is about the size that axially occupies is up to 1200mm.Even obviously such device can obtain higher sedimentation velocity, but because manufacturing cost is higher, control is comparatively complicated, and it is bigger to consume energy, and is difficult to use and promote.The superfine people of leaf in 1994 (vacuum 1994.64-6) has been inquired into the approach that miniature toroidal permanent magnet arranged in co-axial alignment obtains the permanent magnetism mirror field, but because used permanent magnet external diameter is φ 45mm only, so only be confined to Approach Discussion.The superfine people of nineteen ninety-five leaf (nucleosynthesis and plasma physics, Vol.15No.4 43-48) adopts the NbFeB permanent magnet to rearrange asymmetric axial two utmost point fields at the resonator cavity outer wall again, substitutes coil magnetic field, but because the axial magnetic field skewness is difficult to deposit uniform film.Remain in the prior art in a word in simple bulky when adopting coil magnetic field, control complexity and cost higher, and Distribution of Magnetic Field lack of homogeneity problem when adopting permanent magnet merely.
Up to the present, still there is not a kind of comparatively simple and method easily in the prior art, can be used for forming and regulating the required axial magnetic field position shape of Ecr plasma, cause thin film deposition speed to be paced up and down, restricted the application and the development of microwave electron cyclotron resonance plasma to a certain extent at lower level.
Summary of the invention
The objective of the invention is to, at the Ecr plasma applied technical field, at the formation of axial magnetic field position shape and bulky when controlling existing simple employing coil magnetic field, control complexity and cost higher, and Distribution of Magnetic Field lack of homogeneity problem when adopting permanent magnet merely, and the low problem of thin film deposition speed that causes thus, propose a kind of new method and solved this problem.And be the technical scheme of Method Of Accomplishment, designed the device that improves Ecr plasma thin film deposition speed.
Improve the method for electron cyclotron resonance chemical vapor deposition speed in the technical scheme of the present invention, include in the electron cyclotron resonace system, be positioned at the resonator cavity wall and place single and magneticfield coil outward, produce the required axial magnetic field position shape of Ecr plasma, be characterised in that, be used in the method for placing permanent magnet unit in the sediment chamber, make the axial magnetic field position shape of resonator cavity and sediment chamber form and regulate jointly by single also coil and permanent magnet unit combination.This new magnetic field configuration has determined that its plasma body that produces can obtain higher thin film deposition speed under the electron cyclotron resonace condition.
Improve the isolated plant of electron cyclotron resonance chemical vapor deposition speed method in the technical scheme of the present invention, include microwave source, vacuum-sealing, thin film deposition, vacuum pump system, produce electron cyclotron resonace and deposit required axial magnetic field part, gas circuit and gas control section, the Rankine-Hugoniot relations that each several part connects downwards in the past backward more successively is, microwave generator 1, connect waveguide 2, three end circulators 3, high power load 4, three pin tuners 5, the transition rectangular waveguide 6 of band level and vertical section and vertical waveguide 7, other are connected to: the upper surface that central authorities open the window flange 9 of rectangular opening is connected with an end of vertical waveguide 7, the lower surface of window flange 9 is pressed in ceramic microwave window 8 on the upper surface of resonator cavity 10, the upper surface of the sediment chamber 11 that the lower surface of resonator cavity 10 and diameter are bigger is connected, print platform 12 places in the sediment chamber, side, 11 below, sediment chamber tapping is connected with the vacuum pump system of being made up of rotor pump 15 and turbomolecular pump 16, sediment chamber's outer wall and worktable 14 are fixed together, single and magneticfield coil 17 is positioned at outside cylindrical cavity 10 walls, 18 fens two-way of gas circuit, one the tunnel links to each other with resonator cavity, another road links to each other with the sediment chamber, the invention is characterized in: in the sediment chamber, placed can above print platform 12, produce even axial magnetic field permanent magnet unit 13.
In the device that improves electron cyclotron resonance chemical vapor deposition speed, permanent magnet unit 13 places print platform 12 belows, and print platform 12 is fixed by the exit end of its support bar and sediment chamber's 11 lower bottom parts.
Device of the present invention owing to placed permanent magnet unit 13 below print platform 12, can produce even axial magnetic field above the print platform, make axial magnetic field position shape be formed and regulate jointly by coil and permanent magnet unit combination.The permanent magnet unit axial magnetic field changes greatly, makes axial magnetic field position shape that noticeable change take place near permanent magnet the time.Permanent magnet unit 13 volumes are less, and bigger mobile space can be arranged in the sediment chamber.The employing of permanent magnet unit 13 has been finished preferably and has been reached the purpose of regulating whole axial magnetic field position shape.Said apparatus has been finished technical scheme of the present invention preferably.
Adopt the method for raising electron cyclotron resonance chemical vapor deposition speed of the present invention and install obtained actual effect and be:
1. install the design science advanced person.Only adopt a coil and a permanent magnet unit combination just can make Ecr plasma significantly convergence and concentrated above print platform or permanent magnet unit, provide pacing factor for having significantly improved thin film deposition speed.
2. solved comparatively simply and be used to form and the existing in prior technology problem of Control Shaft to magnetic field configuration.
3. significantly improved thin film deposition speed.Adopt this contrive equipment deposition of amorphous silicon films, sedimentation velocity can be enhanced about more than once (referring to embodiment 2).
4. device volume is little, is easy to control, save energy, and manufacturing cost is lower, is convenient to promote.
Description of drawings
The device synoptic diagram of Fig. 1 raising electron cyclotron resonance chemical vapor deposition of the present invention speed
The 1-microwave generator, the rectangular waveguide of 2-horizontal positioned, 3-three end circulators, the 4-high power load, 5-three pin tuners, the transition rectangular waveguide of 6-band level and vertical section, the vertical rectangular waveguide of placing of 7-, 8-ceramic microwave window, 9-window flange, the 10-cylindrical cavity, 11-sediment chamber, 12-print platform, the 13-permanent magnet unit, 14-worktable, 15-rotor pump, the 16-turbomolecular pump, 17-single and magneticfield coil, 18-gas circuit and gas control unit.
Fig. 2 permanent magnet unit structure iron
The equal magnetic sheet of 19-, 20-permanent magnet, 21-bell housing, 22-screening cover, 23-positioning screw cover.
Plasma body photo during Fig. 3 unicoil magnetic field
Plasma body photo when Fig. 4 unicoil magnetic field and the combination of permanent magnet unit magnetic field
Embodiment
Permanent magnet unit 13 structures in apparatus of the present invention are referring to Fig. 2.Permanent magnet unit 13 is made up of equal magnetic sheet 19, permanent magnet 20, bell housing 21, screening cover 22 and positioning screw cover 23.Permanent magnet 20 is positioned at equal magnetic sheet 19 belows, and bell housing 21 is in around the permanent magnet 20, and screening cover 22 is positioned at bell housing 21 belows, and positioning screw cover 23 runs through screening cover 22, bell housing 21, permanent magnet 20, equal magnetic sheet 19 from bottom to top successively during assembling.After all magnetic sheet 19 utilizes positioning screw cover location with permanent magnet 20, rely on the action of a magnetic field power closely to link together.After all magnetic sheet 19, bell housing 21, screening cover 22 utilize the positioning screw location equally, rely on the action of a magnetic field power to interconnect.Whole permanent magnet unit 13 is axial symmetry.All magnetic sheet 19 central authorities have the screw of perforation, and screw cooperates with the positioning screw cover, and rotate equal magnetic sheet 19 permanent magnet unit 13 is moved up and down, thus the Distribution of Magnetic Field and the plasma distribution of change print top.Positioning screw overlaps 23 upper ends and is connected with the nut of print platform 12 bottoms, and following sleeve pipe then is connected with the support bar of print platform 12.
Fig. 1 is seen in single unit system assembling of the present invention, mainly comprises six parts.First part is a microwave source, and this part is used for providing microwave to the electron cyclotron resonace resonator cavity of vertical placement.Microwave source is made up of microwave generator 1, transmission system and Controlling System, and wherein transmission system is made up of three end circulators 3, three pin tuners 5 and waveguide again.Microwave generator 1 and transmission system are in the extreme higher position of apparatus of the present invention in the space, each several part downward more backward annexation in the past is, the following outlet of microwave generator 1 is connected by bolt with horizontal rectangular waveguide 2 upper inlets, rectangular waveguide 2 carries out flange with three end circulators, 3 inlet ends again and is connected, the reflection end of three end circulators 3 carries out flange with high power load 4 and is connected, the exit end of three end circulators 3 carries out flange with three pin tuners 5 and is connected, three pin tuners 5 carry out flange with the transition rectangular waveguide 6 of band level and vertical section again and are connected, and transition rectangular waveguide 6 carries out flange with vertical rectangular waveguide 7 downwards and is connected.Second section is the window flange 9 that ceramic microwave window 8 and central authorities open rectangular opening, and this part is used for microwave is coupled into resonator cavity and vacuum-sealing is provided.The rectangular waveguide 7 of vertical placement carries out flange and is connected in window flange 9 upper surfaces and the first part, and the lower surface is adopted bolt to connect the ceramic microwave window is pressed on the upper surface of the cylindrical cavity 10 in the third part.Third part is made up of cylindrical cavity 10, sediment chamber 11, print platform 12, permanent magnet unit 13 and the worktable 14 etc. of vertical placement.This part is mainly used in and forms plasma body and carry out thin film deposition.The upper surface of the sediment chamber 11 that the lower surface of cylindrical cavity 10 and diameter are bigger is connected with bolting by flat seal, print platform 12 is connected by bolt with the exit end of sediment chamber's 11 lower bottom parts with its below permanent magnet unit 13 support bar by the print platform and rubber seal is fixed, being connected then between permanent magnet unit 13 and the print platform 12 finished by the positioning screw cover 23 of permanent magnet unit, be to be connected with the nut of print platform 12 bottoms on the positioning screw cover 23, support bar following and print platform 12 partly forms socket, side, 11 below, sediment chamber tapping carries out flange with the vacuum pump system that the 4th part promptly is made up of rotor pump 15 and turbomolecular pump 16 and is connected, and sediment chamber's outer wall and worktable 14 are fixed together.The 5th part is single and magneticfield coil 17 and coil power, this part is used to produce electron cyclotron resonace and deposit required axial magnetic field, single and magneticfield coil 17 is positioned at beyond cylindrical cavity 10 walls, and with cylindrical cavity 10 be coaxial arrangement, coil 17 is supported by three uniform on 11 upper surfaces, sediment chamber pillars.The 6th part is gas circuit 18 and gas control unit, is used to provide plasma gas and deposition and purge gas.Gas circuit is divided two-way, and one the tunnel links to each other with cylindrical cavity 10, and another road links to each other with sediment chamber 11.
Provide the electron cyclotron resonance chemical vapor deposition device that adopts unicoil magnetic field electron cyclotron resonance chemical vapor deposition device and unicoil magnetic field and the combination of permanent magnet unit magnetic field respectively below, the contrast experiment who under same experimental conditions, carries out.
Example 1: experiment condition is that system is evacuated to 1 * 10
-3Pa feeds hydrogen to resonator cavity 10, and flow is 20sccm, and air pressure is transferred to 0.5Pa, and magneticfield coil 17 feeds the electric current of 137A, and microwave source 1 real output is got 500W.Under the acting in conjunction of microwave and coil magnetic field, in resonator cavity 10 and sediment chamber 11, can produce Ecr plasma.
Plasma body photo when plasma body photo when Fig. 3 and Fig. 4 are respectively unicoil magnetic field 17 and unicoil 17 magnetic fields and the combination of permanent magnet unit 13 magnetic fields.Plasma body during unicoil magnetic field is in vacuum deposition chamber 11 disperses distribution; Plasma body when unicoil 17 magnetic fields and the combination of magnetic field, permanent magnet Unit 13 is earlier in vacuum deposition chamber 11 disperses distribution, is progressively restraining near permanent magnet unit 13, and plasma body is all being concentrated on the top of permanent magnet 13.Concentrating to improving thin film deposition speed of plasma body provides pacing factor.
Example 2: the cleaning glass sheet that will be of a size of 20mm * 20mm * 1mm is put to print platform 12, and system is evacuated to 1 * 10
-3Pa, heating print to 280 ℃ feeds hydrogen to resonator cavity 10, and flow is 20sccm, feeds silane to sediment chamber 11, and flow is 7sccm, and total gas pressure is transferred to 0.5Pa, and magneticfield coil 17 feeds the electric current of 137A, and microwave source 1 real output is got 500W.Under the acting in conjunction of microwave and coil magnetic field, in resonator cavity 10 and sediment chamber 11, produce the plasma body of electron cyclotron resonace, and on sheet glass, begin deposition of amorphous silicon films.Amorphous silicon membrane sedimentation velocity during unicoil 17 magnetic fields is 5.2 /s; The amorphous silicon membrane sedimentation velocity is 12.2 /s when unicoil 17 magnetic fields and the combination of permanent magnet unit 13 magnetic fields.Adopt combination field that thin film deposition speed is enhanced about more than once.
Claims (4)
1, improves the method for electron cyclotron resonance chemical vapor deposition speed, be in the electron cyclotron resonace system, be positioned at the resonator cavity wall and place single and magneticfield coil outward, produce the required axial magnetic field position shape of Ecr plasma, the invention is characterized in, be used in the method for placing permanent magnet unit in the sediment chamber, make the axial magnetic field position shape of resonator cavity and sediment chamber form and regulate jointly by single coil and permanent magnet unit combination.
2, improve the device of electron cyclotron resonance chemical vapor deposition speed, include microwave source, vacuum-sealing, thin film deposition, vacuum pump system, produce electron cyclotron resonace and deposit required axial magnetic field part, gas circuit and gas control section, the Rankine-Hugoniot relations that each several part connects downwards in the past backward more successively is, microwave generator (1), connect waveguide (2), three end circulators (3), high power load (4), three pin tuners (5), the transition rectangular waveguide (6) of band level and vertical section and vertical waveguide (7), other are connected to: the upper surface that central authorities open the window flange (9) of rectangular opening is connected with an end of vertical waveguide (7), the lower surface of window flange (9) is pressed in ceramic microwave window (8) on the upper surface of resonator cavity (10), the upper surface of the sediment chamber (11) that the lower surface of resonator cavity (10) is bigger with diameter is connected, print platform (12) places in the sediment chamber, side, below, sediment chamber (11) tapping is connected with the vacuum pump system of being made up of rotor pump (15) and turbomolecular pump (16), sediment chamber's outer wall and worktable (14) are fixed together, single and magneticfield coil (17) is positioned at outside cylindrical cavity (10) wall, gas circuit (18) is divided two-way, one the tunnel links to each other with resonator cavity, another road links to each other with the sediment chamber, the invention is characterized in: in the sediment chamber, placed can produce in print platform (12) top even axial magnetic field permanent magnet unit (13).
3, the device of raising electron cyclotron resonance chemical vapor deposition speed according to claim 2, be characterised in that: permanent magnet unit (13) places print platform (12) below, and print platform (12) is fixed by the exit end of its support bar and sediment chamber (11) lower bottom part.
4, according to the device of claim 2 or 3 described raising electron cyclotron resonance chemical vapor deposition speed, be characterised in that: permanent magnet unit (13) includes equal magnetic sheet (19), permanent magnet (20), bell housing (21), screening cover (22) and positioning screw cover (23), permanent magnet (20) is positioned at equal magnetic sheet (19) below, bell housing (21) is in permanent magnet (20) on every side, screening cover (22) is positioned at bell housing (21) below, and positioning screw cover (23) runs through screening cover (22), bell housing (21), permanent magnet (20), equal magnetic sheet (19) from bottom to top successively during assembling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021554315A CN1181221C (en) | 2002-12-13 | 2002-12-13 | Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021554315A CN1181221C (en) | 2002-12-13 | 2002-12-13 | Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1417375A true CN1417375A (en) | 2003-05-14 |
| CN1181221C CN1181221C (en) | 2004-12-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021554315A Expired - Fee Related CN1181221C (en) | 2002-12-13 | 2002-12-13 | Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100335677C (en) * | 2004-12-28 | 2007-09-05 | 北京科技大学 | DC electric arc plasma chemical vapor deposition apparatus and diamond coating method |
| CN100593585C (en) * | 2007-08-21 | 2010-03-10 | 西安电子科技大学 | Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device |
| CN103695868A (en) * | 2013-12-13 | 2014-04-02 | 中国科学院等离子体物理研究所 | Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint |
| CN106591783A (en) * | 2016-11-23 | 2017-04-26 | 中国科学院合肥物质科学研究院 | Magnetic confinement vacuum ion film plating device |
| CN112040743A (en) * | 2020-09-09 | 2020-12-04 | 广东思泉新材料股份有限公司 | Heat conducting fin with coating layer structure |
-
2002
- 2002-12-13 CN CNB021554315A patent/CN1181221C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100335677C (en) * | 2004-12-28 | 2007-09-05 | 北京科技大学 | DC electric arc plasma chemical vapor deposition apparatus and diamond coating method |
| CN100593585C (en) * | 2007-08-21 | 2010-03-10 | 西安电子科技大学 | Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device |
| CN103695868A (en) * | 2013-12-13 | 2014-04-02 | 中国科学院等离子体物理研究所 | Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint |
| CN103695868B (en) * | 2013-12-13 | 2016-06-08 | 中国科学院等离子体物理研究所 | The linear plasma reinforced chemical vapor deposition system of long-range mirror-magnetic field fetter |
| CN106591783A (en) * | 2016-11-23 | 2017-04-26 | 中国科学院合肥物质科学研究院 | Magnetic confinement vacuum ion film plating device |
| CN112040743A (en) * | 2020-09-09 | 2020-12-04 | 广东思泉新材料股份有限公司 | Heat conducting fin with coating layer structure |
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| Publication number | Publication date |
|---|---|
| CN1181221C (en) | 2004-12-22 |
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