CN1416142A - High molecular PTC thermistor without electric arc and method for producing same - Google Patents

High molecular PTC thermistor without electric arc and method for producing same Download PDF

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Publication number
CN1416142A
CN1416142A CN 02145483 CN02145483A CN1416142A CN 1416142 A CN1416142 A CN 1416142A CN 02145483 CN02145483 CN 02145483 CN 02145483 A CN02145483 A CN 02145483A CN 1416142 A CN1416142 A CN 1416142A
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CN
China
Prior art keywords
high molecular
carbon black
chip
etching
electric arc
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Pending
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CN 02145483
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Chinese (zh)
Inventor
侯李明
王军
秦玉廷
杨兆国
潘昂
李从武
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WEIAN THERMOELECTRICAL MATERIALS CO Ltd SHANGHAI
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WEIAN THERMOELECTRICAL MATERIALS CO Ltd SHANGHAI
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Priority to CN 02145483 priority Critical patent/CN1416142A/en
Publication of CN1416142A publication Critical patent/CN1416142A/en
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Abstract

The invented core material of the macromolecule PTC thermistor consists of the chip possessing the PTC characteristics and the metals foil electrodes pasted on the both sides of core material. The area of the electrode is smaller than the area of the chip. Comparing with the prior art, the etching technique and the stamping etc. techniques are adopted so as to realize the new structure of the PTC thermistor: the large chip and the small electrodes. The new structure increases the creepage distance between the electrodes, and reduces the arc discharging phenomena happened between the electrodes.

Description

No electric arc high molecular PTC thermistor and manufacture method thereof
Technical field
The present invention is to be electronic devices and components manufacture method of primary raw material and products thereof with conducting high polymers thing composite material, especially relates to a kind of high molecular PTC thermistor and manufacture method thereof.
Background technology
Usually, in the crystallization of filled conductive particle or hypocrystalline polymer composite, can show positive temperature coefficient PTC (positive temperature coefficient) phenomenon.That is to say that in certain temperature range, the resistivity of self can increase with the rising of temperature.These crystallizations or semi-crystalline polymer comprise polyethylene, polypropylene, Kynoar, polytrifluorochloroethylene, and their copolymer.Conducting particles comprises carbon black, graphite, carbon fiber, metal dust (as silver powder, copper powder, aluminium powder, silver powder, stainless steel powder).When lower temperature, this class conductor presents lower resistivity, be elevated near its high molecular polymer fusing point and work as temperature, and when just reaching so-called " shutoff " temperature, the hurried rising of resistivity.These class conduction private savings with ptc characteristics are made thermistor, are applied to the overcurrent protection setting of circuit.In the normal state; electric current in the circuit is less relatively; the thermistor actuator temperature is lower; and when the big electric current that is caused by fault passes through this from the renaturation fuse; its temperature can be elevated to " shutoff " temperature suddenly; cause its resistance value to become very big, so just make circuit be in a kind of approximate " open circuit " state, thereby protected other elements in the circuit.And after fault was got rid of, the temperature of thermistor descended, and its resistance value can return to the low resistance state again.High score has been widely applied in the various fields such as communication, computer, automobile, Industry Control, household electrical appliance in PTC themistor.Usually the core of high molecular PTC thermistor is so-called " sandwich " structure, it is double layer of metal paillon foil electrode holder one deck high molecular PTC material chip, when thermistor is in " shutoff " state, chip is in high resistance state, and the voltage between two-layer electrode slice increases, because chip is very thin, often produce creepage phenomenon between electrode, arc discharge occurs, can cause when serious that chip damages, cause thermistor to lose efficacy.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of can suppress arc discharge, safe and reliable high molecular PTC thermistor and manufacturing process thereof in order to overcome the defective that above-mentioned technology exists.
Purpose of the present invention can be achieved through the following technical solutions: a kind of high molecular PTC thermistor, its core is made of chip with ptc characteristics and the tinsel electrode that is covered on the chip two sides, characteristics be electrode area less than chip area, described core can directly use as thermistor.
On the technique scheme basis, also can be on this tinsel electrode outer surface welding lead and coated insulation layer outside.
Manufacture method of the present invention: described chip is mixed according to a certain percentage by high molecular polymer, carbon black, carbon black dispersant and other processing aid, wherein: high molecular polymer can be the blend of a kind of polymer or two or more polymer in the chip component, mainly contain: polyethylene, polypropylene, Kynoar, poly-trichloroethylene etc., and their copolymer; Processing aid is carbon black dispersant, antioxidant, crosslinking accelerator, coupling agent in the described chip component, wherein carbon black dispersant can be paraffin, oxidic polyethylene, antioxidant can be phenols or aminated compounds, crosslinking accelerator can be the polyfunctional group unsaturated compound, and coupling agent can be silane or titanate ester organic compound; Carbon black is meant various conductive carbon blacks, colour black and reinforcement carbon black, preferably conductive carbon black in the described chip component.
The present invention can further make by following method, the first step, respectively with chip component high molecular polymer, carbon black, add that auxiliary agent is mixing under 100-200 ℃ of temperature, making the two sides with mould pressing method, to paste the tinsel area be 100-1000cm 2, the composite sheet of thick 0.1-1.0mm; Again with this composite sheet gamma-rays (Co 60) or electron beam to irradiate crosslinked, dosage is 5--100Mrad.Second step by etch process, etched away the metal copper foil that width is 0.2-2.0mm in composite sheet top and bottom correspondence, and etched figure is " well " font or annular, and etching bath spacing or annulus center of circle spacing are 2.0-50.0mm; Protect non-etching region with electrotinning or leypewter before the etching, the plating bath of the electrotinning that is used to protect is selected sulfate type for use, and the plating bath of the tin-lead alloy plating that is used to protect mainly comprises borofluoride type and floride-free alkylsulfonate type; Cathode-current density is 0.05--10A/dm 2, alr mode adopts continuous filtration, negative electrode moves or the pump circulation, and electroplating temperature 15--50 ℃, electroplating time is 2--100 minute, thickness of coating 2--40 μ m; After etching is intact, adopt chemical method or electrolysis stripping tin or tin lead protection layer, the chemical method decoating liquid comprises hydrogen fluoride amine type, fluoboric acid type, nitric acid type, and the stripping method can be selected the Mechanical Method of soaking division or horizontal spray for use.The 3rd step cut into the square of different sizes or round chip with composite sheet along the etching bath center line, and chip can directly use as thermistor.
The present invention also can be on this tinsel electrode outer surface welding lead and coated insulation layer outside.
Compared with prior art, the present invention has adopted special processing technology, has realized the novel structure of high molecular PTC thermistor large chip, small electrode, has increased creepage distance between electrode (anode-cathode distance), reduce the generation of arc discharge phenomenon between electrode, improved its security reliability.
Description of drawings
Accompanying drawing 1 is the composite sheet schematic diagram.
Accompanying drawing 2 carries out the front view of etch process to composite sheet, and etched figure is " well " font.
Accompanying drawing 3 carries out the front view of etch process to composite sheet, and etched figure is an annular.
Accompanying drawing 4 is the profile of chip.
Embodiment
Embodiment 1,
As table 1
Unit: g
High density polyethylene (HDPE) Carbon black The carbon black dispersant oxidic polyethylene Antioxidant Triallyl isocyanurate Titanium coupling agent
??336 ??400 ????42 ????17 ????7 ????7
Annotate: high density polyethylene (HDPE): the BHB5012 of Philips Petroleum Company
Carbon black: the XC-72 of Cabot Co.,Ltd
Antioxidant: the U.S. big lake chemical industry ANOX70 of Co., Ltd
Its manufacture method: the first step, each component in the table 1 is mixing even in banbury under 190 ℃ of temperature respectively, through cooling, after pulverizing abrasive dust, be clipped between the Copper Foil that two-layer roughened crosses, be put in the pressing mold, pressure 5Mpa is pressed into area 200cm under 180 ℃ of conditions of temperature 2, thick 0.2mm sheet material is a present embodiment composite sheet schematic diagram as Fig. 1, wherein, nickel plating Copper Foil 1,3 is pressed on high molecular PTC core 2 two sides.The 80 ℃ of heat treatments in vacuum drying oven of above-mentioned composite sheet were used gamma-rays (Co after 16 hours 60) irradiation, dosage is 20Mrad.Second step, as Fig. 2 composite sheet is carried out the front view of etch process, etched figure be " well " font, before etching away etching bath 5, at first remainder is protected employing graphic plating last layer pure tin.Plating bath is selected sulfate type for use; Cathode-current density is 0.1A/dm 2Alr mode adopts negative electrode to move, and temperature is 20 ℃; Electroplating time 10 minutes; Thickness of coating 7 μ m.Be the Copper Foil 5 of 0.4mm with the alkaline copper chloride etching solution etched width then, etching bath 5 horizontal spacings are 12mm, and longitudinal pitch is 5mm.Adopt nitric acid type strip tin liquor to strip zinc-plated protective layer with soaking the method for removing again.The 3rd step, shown in the profile that Fig. 4 is chip, nickel plating Copper Foil 1 is divided into Copper Foil district 101 and no Copper Foil district 102,103 after etching, nickel plating Copper Foil 3 is divided into Copper Foil district 301 and no Copper Foil district 302,303 after etching, weld 4mm*10mm respectively on its two sides, the extraction electrode of thick 0.13mm coats one deck polyester tape at last, promptly can be made into the high molecular PTC thermistor of normal temperature zero power resistance 20m Ω.
Embodiment 2
Table 2
Unit: g
High density polyethylene (HDPE) Carbon black The carbon black dispersant oxidic polyethylene Antioxidant Triallyl isocyanurate Titanium coupling agent
??340 ??320 ????30 ????16 ????7 ????7
Annotate: high density polyethylene (HDPE): the BHB5012 of Philips Petroleum Company
Carbon black: the XC-72 of Cabot Co.,Ltd
Antioxidant: the U.S. big lake chemical industry ANOX70 of Co., Ltd
The first step, with each component in the table 2 respectively under 190 ℃ of temperature in banbury mixing evenly, through cooling, pulverize abrasive dust after, be clipped between the Copper Foil that two-layer roughened crosses, be put in the pressing mold, pressure 5Mpa is pressed into area 200cm under 180 ℃ of conditions of temperature 2, thick 2.0mm sheet material.As Fig. 1 is present embodiment composite sheet schematic diagram, and wherein, nickel plating Copper Foil 1,3 is pressed on high molecular PTC core 2 two sides.The 80 ℃ of heat treatments in vacuum drying oven of above-mentioned composite sheet were used gamma-rays (Co after 16 hours 60) irradiation, dosage is 20Mrad.Second step, as Fig. 3 composite sheet is carried out the front view of etch process, etched figure is shown in the annular, before etching away etching bath 6, at first remainder is protected, and adopts graphic plating last layer pure tin.Be the Copper Foil 6 of 0.6mm then with the alkaline copper chloride etching solution etched width, etching annular groove center of circle spacing is 6mm.Adopt nitric acid type strip tin liquor to strip zinc-plated protective layer with soaking the method for removing again.And then to become diameter with punch press along the punching out of etching bath center line be the sequin of 5mm size.Can be directly use as thermistor, also can be on this tinsel electrode outer surface tinned lead and the outside coated epoxy resin insulating barrier of weld diameter 0.6mm.

Claims (4)

1, a kind of no electric arc high molecular PTC thermistor, its core is made of chip with ptc characteristics and the tinsel electrode that is covered on the chip two sides, it is characterized in that the electrode area on two sides is less than chip area.
2, according to the described no electric arc high molecular PTC thermistor of claim 1, it is characterized in that: welding lead and coated insulation layer outside on tinsel electrode outer surface.
3, manufacture method according to claim 1 or 2 described no electric arc high molecular PTC thermistors, it is characterized in that: chip is mixed according to a certain percentage by high molecular polymer, carbon black, carbon black dispersant and other processing aid, described high molecular polymer can be the blend of a kind of polymer or two or more polymer, mainly contain: the mixture of one or more in polyethylene, polypropylene, Kynoar, the poly-trichloroethylene, and their copolymer; Processing aid is carbon black dispersant, antioxidant, crosslinking accelerator, coupling agent in the described chip component, wherein carbon black dispersant can be paraffin, oxidic polyethylene, antioxidant can be phenols or aminated compounds, crosslinking accelerator can be the polyfunctional group unsaturated compound, and coupling agent can be silane or titanate ester organic compound; Described carbon black is meant various conductive carbon blacks, colour black and reinforcement carbon black, preferably conductive carbon black.
4, manufacture method according to the described no electric arc high molecular PTC thermistor of claim 3, it is characterized in that: the first step, respectively with chip component high molecular polymer, carbon black, add that auxiliary agent is mixing under 100-200 ℃ of temperature, making the two sides with mould pressing method, to paste the tinsel area be 100-1000cm 2, the composite sheet of thick 0.1-1.0mm is again with this composite sheet gamma-rays (Co 60) or electron beam to irradiate crosslinked, dosage is 5-100Mrad; Second step, pass through etch process, etch away the metal copper foil that width is 0.2-2.0mm in composite sheet top and bottom correspondence, etched figure is " well " font or annular, etching bath spacing or annulus center of circle spacing are 2.0-50.0mm, protect non-etching region with electrotinning or leypewter before the etching, the plating bath of the electrotinning that is used to protect is selected sulfate type for use, and the plating bath of the tin-lead alloy plating that is used to protect mainly comprises borofluoride type and floride-free alkylsulfonate type; Cathode-current density is 0.05-10A/dm 2, alr mode adopts continuous filtration, negative electrode moves or the pump circulation, and electroplating temperature 15-50 ℃, electroplating time is 2-100 minute, thickness of coating 2-40 μ m; After etching is intact, adopt chemical method or electrolysis stripping tin or tin lead protection layer, the chemical method decoating liquid comprises hydrogen fluoride amine type, fluoboric acid type, nitric acid type, and the stripping method can be selected the Mechanical Method of soaking division or horizontal spray for use; In the 3rd step, composite sheet is cut into the square of different sizes or round chip along the etching bath center line.
CN 02145483 2002-11-19 2002-11-19 High molecular PTC thermistor without electric arc and method for producing same Pending CN1416142A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102176359A (en) * 2011-01-26 2011-09-07 上海长园维安电子线路保护股份有限公司 Cyclic annular positive temperature coefficient thermosensitive resistor and applications thereof
CN102394163A (en) * 2011-12-07 2012-03-28 吴江市恒得利电子有限公司 Sheet-shaped resister
CN103021604A (en) * 2012-12-11 2013-04-03 厦门莱纳电子有限公司 High voltage resisting level high molecular PTC (Positive Temperature Coefficient) thermistor and manufacturing method thereof
CN106205911A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 A kind of heat sensitive chip of anti-short circuit and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102176359A (en) * 2011-01-26 2011-09-07 上海长园维安电子线路保护股份有限公司 Cyclic annular positive temperature coefficient thermosensitive resistor and applications thereof
CN102394163A (en) * 2011-12-07 2012-03-28 吴江市恒得利电子有限公司 Sheet-shaped resister
CN103021604A (en) * 2012-12-11 2013-04-03 厦门莱纳电子有限公司 High voltage resisting level high molecular PTC (Positive Temperature Coefficient) thermistor and manufacturing method thereof
CN106205911A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 A kind of heat sensitive chip of anti-short circuit and preparation method thereof
CN106205911B (en) * 2016-08-30 2020-01-21 肇庆鼎晟电子科技有限公司 Short-circuit-proof thermosensitive chip and preparation method thereof

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