CN1415118A - 逆变器 - Google Patents

逆变器 Download PDF

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Publication number
CN1415118A
CN1415118A CN00817993A CN00817993A CN1415118A CN 1415118 A CN1415118 A CN 1415118A CN 00817993 A CN00817993 A CN 00817993A CN 00817993 A CN00817993 A CN 00817993A CN 1415118 A CN1415118 A CN 1415118A
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inverter
jfet
sic
loss
carrier density
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原田真
弘津研一
松波宏之
木本恒畅
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Inverter Devices (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

一种采用FET结构变换器件的逆变器，其特征在于，所述变换器件S1－S6是由SiC(碳化硅)－JFET形成的，其中该逆变器可以实现开关频率高而损耗小。

Description

逆变器
                        技术领域
本发明涉及一种其中采用FET结构的变换器件(converting device)的逆变器(DC-AC变换器件)。
                        背景技术
已经采用Si-MOSFET和Si-IGBT(绝缘栅双极型晶体管)作为用于低压(600伏或以下)逆变器的半导体元件。
在Si-MOSFET的情况下，损耗大小与Si半导体中的载流子密度成反比。为了降低该损耗，可以提高载流子密度。然而，提高载流子密度时，由击穿电压确定的器件的耐压会降低。例如，在Si的情况下，为使耐压达到200伏，载流子密度要变得低至1015/cm3的数值。因此，由于Si-MOSFET损耗已经很大，不能再提高载流子密度。
此外，由于在MOSFET中，在栅绝缘层SiO2和Si之间的相边界中流过电流，MOSFET往往会受缺陷的影响，载流子的迁移率降低。因此损耗会增加。
在Si-IGBT的情况下，由于为了在双极型器件中降低少数载流子，需要相当长的时间，并且不能增加开关频率，因而使损耗变大。
有很多情况，其中在用于逆变器的变换器件中采用通常关断型(normally-off)器件，以便对例如在控制电路发生短路故障的情况等提供保护。MOSFET满足这些系件。JFET是公知的通常关断型器件。
本发明的目的是提供一种开关频率高而损耗小的逆变器。
                      发明内容
根据本发明的逆变器是一种具有FET结构的变换器件的逆变器，其中该变换器件是由SiC(碳化硅)-JFET(结型FET)形成的。
采用SiC-JFET是由于以下理由：
(1)虽然Si-JFET已按常规方式制造，但载流子密度低，因此其损耗大。如果使用SiC替代Si，可以提高载流子密度并降低其损耗。
(2)在Si-JFET中，载流子密度低，开关频率也低。通过计算可以确认，由于SiC-JFET具有高的载流子密度，可以达到从几百兆赫到几千兆赫的开关频率，JFET的开关频率f可以由下式表达：
        f＝qNAμa2/πL2εs其中q是电荷，NA是载流子密度，μ是载流子迁移率，a是沟道深度，L是沟道长度，εs是介电常数。这里代入NA＝1×1017/cm3，μ＝300cm2/Vsec(厘米2/伏秒)，a＝300nm，L＝10μm，εs＝10×ε0(ε0是在真空中的介电常数)，这些是对于例如200V(伏)耐压的JFET的典型数值，其中可以得到f＝1.4千兆赫。因此，这些对于逆变器是优选的。
图4是在制造这样一种Si-JFET的情况下，漏极电压-电流的测量特性曲线图，其中沟道区域为：沟道深度为0.3μm，沟道长度为10μm，沟道宽度为700μm，载流子密度为1.56×1017/cm3。Vg代表栅极电压。
(3)由于变换器件是由JFET组成的，电流大量流动，载流子迁移率不降低，损耗小。此外，漏极通态电压很小，与Si-MOSFET相比较约为五十分之一左右。因此，SiC-JFET的效率达到95％或以上，而Si-MOSFET的效率为85％。
为了详细地解释，在例如变换200伏的逆变器中，对于稳定损耗(通态(导通)-电压×电流)，Si-MOSFET的损耗为7.5％，对于开关损耗为7.5％，，总损耗变为15％，效率变为85％。另一方面，在SiC-JFET中，由于当使之流过一等于Si-MOSFET的电流的电流时可以将导通-电压降低到五十分之一，可以稳定损耗降低到五十分之一，变为0.15％。此外，可以降低开关损耗。因此，效率变为95％或以上。
可以采用任何公知的方法来利用SiC制造JFET器件。其中一种方法是离子注入法，其中如图1中所示，利用外延层沉积在p+SiC衬底上。衬底上提供有掩膜，利用离子注入法生成变为源极和漏极的n+区域，以及利用相同的方法生成变为栅极的p+区域。当生成p+区域时，使部分沟道深度和沟道长度维持。接着进行退火处理，以便使该器件可投入使用(activate)。
另一种制造SiC-JFET的方法是利用一种反应离子蚀刻法(RIE)生成沟道槽。如图2中所示，利用外延法在p+SiC上沉积n-SiC层，并在其上生成n+层。利用RIE法，在衬底上提供有掩膜，其中消除一部分掩膜，以便形成沟道区域(沟道深度和沟道长度L)。
上述SiC-JFET器件是按通常-导通型描述的，然而，倘若其中沟道深度满足如下表达式，可以按通常-关断型处理，该表达式为： a < 2 &epsiv;s V bi qN (其中，q是电荷，N沟道中的是载流子密度，εs是介电常数，Vbi是内在电位)。
                         附图说明
图1是表示利用离子注入法生成的SiC-JFET结构的剖面图；
图2是表示利用RIE法生成的SiC-JFET结构的剖面图；
图3应用于本发明的逆变器电路图；以及
图4是这样制造的Si-JFET的漏极电压-电流特性测量曲线图。
                       具体实施方式
S1到S6是变换器件。
(实施例)
下文参照详细介绍本发明的优选实施例。
图3是将DC输入E变换为AC输出U、V、W的自换向(commutate)的逆变器电路图，其中6个开关器件S1到S6和反馈二极管D1到D6以三相桥式彼此连接。
逆变器本身是公知的。然而在本逆变器中，开关器件S1到S6由SiC-JFET变换器件组成。此外，反馈二极管D1到D6由SiC肖特基二极管组成。
因此可以实现优异的逆变器，开关频率高而损耗小。
此外，本发明并不局限于图1中所示的这种电压源式自换向的逆变器。其可以应用于电流源式自换向的逆变器以及其它的外部换向的逆变器。
工业应用
如上所述，在根据本发明的逆变器中，采用SiC-JFET作为变换器件，该逆变器开关频率高而损耗小。

Claims (3)

1.一种采用FET结构变换器件的逆变器，其中所述变换器件是由SiC(碳化硅)-JFET形成的。
2.如权利要求1所述的逆变器，其中所述SiC-JFET为通常-关断型。
3.如权利要求1所述的逆变器，其中所述变换器件还包括SiC肖特基二极管。
CN00817993A 2000-07-28 2000-07-28 逆变器 Pending CN1415118A (zh)

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CA (1) CA2392575A1 (zh)
WO (1) WO2002011210A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100516903C (zh) * 2005-10-21 2009-07-22 鸿富锦精密工业（深圳）有限公司 逆变器测试治具
CN106253732A (zh) * 2016-08-19 2016-12-21 广东美的制冷设备有限公司 智能功率模块、电力电子装置和空调器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200391A (ja) * 2002-12-18 2004-07-15 Hitachi Ltd 半導体装置
FI119669B (fi) * 2007-06-20 2009-01-30 Vacon Oyj Jännitepulssin rajoitus
JP2013188007A (ja) * 2012-03-07 2013-09-19 Mitsubishi Electric Corp 電力変換器
KR101624070B1 (ko) 2012-04-23 2016-05-24 미쓰비시덴키 가부시키가이샤 영구 자석형 회전 전기 및 차량 구동 시스템
US9143078B2 (en) 2012-11-29 2015-09-22 Infineon Technologies Ag Power inverter including SiC JFETs

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2865022B2 (ja) * 1995-06-16 1999-03-08 サンケン電気株式会社 直流変換装置
SE9502249D0 (sv) * 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JPH09233827A (ja) * 1996-02-26 1997-09-05 Matsushita Electric Ind Co Ltd Ｐｗｍインバータ用出力回路
JP3524395B2 (ja) * 1998-09-02 2004-05-10 株式会社ルネサステクノロジ 半導体スイッチング素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100516903C (zh) * 2005-10-21 2009-07-22 鸿富锦精密工业（深圳）有限公司 逆变器测试治具
CN106253732A (zh) * 2016-08-19 2016-12-21 广东美的制冷设备有限公司 智能功率模块、电力电子装置和空调器

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CA2392575A1 (en) 2002-02-07
WO2002011210A1 (fr) 2002-02-07
EP1306903A4 (en) 2005-02-09
KR20030060869A (ko) 2003-07-16
EP1306903A1 (en) 2003-05-02

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