CN1412623A - Base plate exposure device and method - Google Patents
Base plate exposure device and method Download PDFInfo
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- CN1412623A CN1412623A CN 01143414 CN01143414A CN1412623A CN 1412623 A CN1412623 A CN 1412623A CN 01143414 CN01143414 CN 01143414 CN 01143414 A CN01143414 A CN 01143414A CN 1412623 A CN1412623 A CN 1412623A
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- light source
- base material
- base
- exposure device
- base plate
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Abstract
The base plate exposure device includes at least a line light source and a control system, in which the line light source is formed from several point light sources, and said control system can convert the pattern into a time signal to control the lighting or blarketing state of every point source in different time, and said control system also can be used for controlling the photoresist of base material surface irradiated by scanning light source so as to make said photoresist exposure. Said invention also provides a base plate exposure method that utilizes line light source formed from several point light sources to scan the photoresist once or several time sto make the pattern transferred on the photoresist possess better resolution.
Description
Technical field
The invention relates to a kind of base board exposure device and method, and particularly pattern (pattem) can be transferred to base board exposure device and method on the photoresistance relevant for a kind of light shield (photo mask) that do not need.
Background technology
Little shadow (photolithography) can be described as one of step very important in the whole semiconductor technology.In the making of wafer, the pattern of each layer film and doped regions etc. all are to be decided by lithography process.Therefore, we with little shadow number of times of a required process of technology, promptly its needed light shield quantity is weighed the complexity of this technology usually.When carrying out lithography process, must earlier wafer be heated and remove so that its lip-deep hydrone is steamed, this step is called dehydration baking (dehydration bake).Then carry out linging (priming), it is close with the surface energy of photoresistance that suitable linging can make the surface energy of wafer be adjusted to, and increases photoresistance in the adhesion of wafer.Just carry out photoresistance coating, soft roasting (soft bake), hard roasting steps such as (hard bake) afterwards.Photoresistance on wafer is through after the suitable curing, at last again by exposure (exposure), develop (development) with the design transfer on the light shield to photoresistance.
Please refer to Fig. 1, it is known lithography process by contact (contact mode) light shield with the synoptic diagram of design transfer to the photoresistance.One base material (substrate) 100 at first is provided, can has established circuit, dielectric layer, dielectric layer pattern or conductive layer on the base material 100, and photoresistance 102 is arranged in surface configuration.Then a light shield 110 is disposed on the photoresistance 102.Be protection light shield surface; separate with diaphragm 104 between light shield and the light group; diaphragm 104 contacts with the surface of light shield 110 and the surface of photoresistance 102 simultaneously; irradiation by a light source 112 exposes to photoresistance 102 more afterwards, is transferred on the photoresistance 102 with the pattern (pattern) with light shield 110.
Light shield 110 frameworks of known contact dispose patterned shielding 108 on the surface of transparency carrier 106 on a transparency carrier 106.For the protection light shield, be sandwiched in the protective seam 104 between transparency carrier 106 and the photoresistance 102, contact with the surface of transparency carrier 106 and photoresistance 102 simultaneously.Wherein, the patterned shielding 108 on the light shield 110 can be covered light source 112 with decision and be shone on the pattern on the photoresistance 102.
Then please refer to Fig. 2, it is known lithography process by contactless (none-contactmode) light shield with the synoptic diagram of design transfer to the photoresistance.One base material (substrate) 200 at first is provided, disposes photoresistance 202 on the base material 200.Then a light shield 210 is disposed at photoresistance 202 tops, and between light shield 210 and photoresistance 202, disposes a lens combination 214.Irradiation by a light source 212 exposes to photoresistance 202 more afterwards, forms pattern 216 with the design transfer with the patterned shielding 208 of light shield 210 on photoresistance to photoresistance 202.
Known contactless light shield 210 frameworks are on a transparency carrier 206, dispose patterned shielding 208 on the surface of transparency carrier 206, patterned shielding 208 on the light shield 210 can be covered light source 212 with decision and be shone pattern 216 on photoresistance 202, and light shield 210 is scioptics group 214 modes with noncontact photoresistance 202, with design transfer to photoresistance 202.Known light shield very time-consuming and expensive on making, and light shield must place it in the suitable environment and preserve, so the cost of light shield on safeguarding is very high.
In addition, the pattern on the light shield also can't change, and therefore when the line design on wafer or the printed circuit board (PCB) is changed to some extent, must make suitable light shield again.
Summary of the invention
The objective of the invention is to propose a kind of base board exposure device and method that does not need light shield, can reduce in the lithography process cost that produces because of light shield manufacture and preservation.
For reaching purpose of the present invention, propose a kind of base board exposure device and formed by an one scan light source and a control system.Wherein, scanning light source is disposed at above the photoresistance of desiring on the base material to expose, and control system is along the one scan path movement in order to gated sweep light source or base material, and be a time signal with the pattern transfer of desiring to be formed on the photoresistance simultaneously, with the flicker state of gated sweep light source at different time.
In the base board exposure device of the present invention, scanning light source is made up of a plurality of pointolite, and a plurality of pointolite constitutes a line source in the mode of single arrangement.In addition, also can constitute many line sources in the mode of many rows' arrangements by a plurality of pointolites, each line source is each other for being arranged in parallel, and the direction along its arrangement can have a specific displacement (positionshift) between each line source, make the pointolite in each alignment light source present the arrangement of dislocation, to improve the resolution of exposure.Wherein, above-mentioned pointolite for example is light emitting diode, and laser diode etc.
In the base board exposure device of the present invention, can between scanning light source and photoresistance, dispose a lens combination, make after the adjustment of light via lens combination of scanning light source, shine the purpose that on photoresistance, reaches exposure.
For reaching purpose of the present invention, proposing a kind of base plate exposure method is by an one scan light source and a control system photoresistance on one base material to be exposed.At first scanning light source is disposed at the photoresistance top, then with control system gated sweep light source or base material moves along scanning pattern, and by control system with desire to be formed at pattern transfer on the photoresistance be a time signal with the flicker state of gated sweep light source at different time, and photoresistance is exposed.
In the base plate exposure method of the present invention, a plurality of pointolites can be arranged in single line source, and by the single or the mode resolution of promoting exposing patterns of scanning repeatedly.
In the base plate exposure method of the present invention, the path of scanning light source scanning can be vertical with the direction that pointolite is arranged.
In the base plate exposure method of the present invention, the direction out of plumb that the path of scanning light source scanning can be arranged with pointolite.
Description of drawings
Fig. 1 is known lithography process by the contact light shield with the synoptic diagram of design transfer to the photoresistance;
Fig. 2 is known lithography process by contactless light shield with the synoptic diagram of design transfer to the photoresistance;
Fig. 3 is the synoptic diagram that forms pattern according to a preferred embodiment of the present invention by the pointolite of single arrangement on photoresistance;
Fig. 4 is the synoptic diagram that forms pattern according to the pointolite that a preferred embodiment of the present invention is arranged by many rows on photoresistance;
The scanning pattern synoptic diagram that Fig. 5 forms on photoresistance for the pointolite of arranging by many rows according to a preferred embodiment of the present invention;
Fig. 6 is for carrying out the scanning pattern synoptic diagram of multiple scaaning on photoresistance according to the pointolite of a kind of single arrangement of a preferred embodiment of the present invention;
Fig. 7 carries out the scanning pattern synoptic diagram of multiple scaaning on photoresistance for the pointolite according to the another kind of single arrangement of a preferred embodiment of the present invention.
100,200,300: base material
102,202,302: photoresistance
104: protective seam
106,206: transparency carrier
108,208: patterned shielding
110,210: light shield
112,212: light source
214,310: lens combination
216,312: pattern
304: scanning light source
304a, 304b, 304c, 304d: line source
306: pointolite
308: control system
314: base material moving direction
316: carrier
318: direction
320: scanning pattern
P: spacing
S: displacement
A, B: distance
Embodiment
At first please refer to Fig. 3, it is the synoptic diagram that forms pattern according to a preferred embodiment of the present invention by the pointolite of single arrangement on photoresistance.Before carrying out exposure technology, the base material 300 that disposes photoresistance 302 on the surface is provided earlier, can have established circuit, dielectric layer, dielectric layer pattern or conductive layer on the base material 300, and base material 300 is positioned on the carrier 316.Wherein, base material 300 for example is printed circuit board (PCB) or various encapsulation base material.Base board exposure device mainly is made up of scanning light source 304 and control system 308.Wherein, scanning light source 304 is made of a plurality of pointolite 306, and pointolite 306 is that the mode with single arrangement constitutes a line source 304, and the orientation of line source is a direction 318.Wherein, pointolite 306 for example is light emitting diode, and laser diode etc.And control system 308 is to move along base material moving direction 314 in order to the carrier 316 of controlling supporting substrate 300, and the pattern of desiring to be formed on the photoresistance 302 312 is converted to a time signal by control system 308, with the flicker state of gated sweep light source 304, and then photoresistance 302 exposed at different time.In addition, configurable between scanning light source 304 and base material 300 have a lens combination 310, and this lens combination 310 can will be shone on photoresistance 302 after the light adjustment of being sent of scanning light source 304 (for example pattern dwindle, amplify, focus on or defocus etc.).
Please refer to Fig. 3 equally, the base material 300 on the carrier 316 moves along base material moving direction 314.Control system 308 becomes one dimension (one dimension) luminous point to the signal of time with desiring to be transferred to figure decoding (decode) on the photoresistance 302, in the time signal may command scanning light source 304 of this one dimension each pointolite 306 different time bright, state goes out.Because base material 300 moves along base material moving direction 314, so between base material 300 and the scanning light source 304 relative motion is arranged also, therefore when scanning light source 304 at bright, the state that goes out that different time presented, whether the promptly corresponding exposure of photoresistance 302 on diverse location to be.After scanning light source 304 scannings, scanning light source 304 can be transferred to two dimension (two dimension) pattern 312 on the photoresistance 302.
Then please refer to Fig. 4, it is the synoptic diagram that forms pattern according to the pointolite that a preferred embodiment of the present invention is arranged by many rows on photoresistance.Before carrying out exposure technology, the base material 300 that disposes photoresistance 302 on the surface is provided earlier, and base material 300 is positioned on the carrier 316.Base board exposure device mainly is made up of scanning light source 304 and control system 308.Wherein, scanning light source 304 is made of a plurality of pointolite 306, scanning light source 304 is to constitute many line source 304a, 304b, 304c, the 304d that are arranged in parallel in the mode that many rows arrange, the orientation of line source 304a, 304b, 304c, 304d is a direction 318, and have a displacement S (referring to Fig. 5) along direction 318 between line source 304a, 304b, 304c, the 304d, make the pointolite 306 among each line source 304a, 304b, 304c, the 304d present the arrangement of dislocation, to improve the resolution of exposure.
Control system 308 is to move along base material moving direction 314 in order to the carrier 316 of controlling supporting substrate 300, and the pattern of desiring to be formed on the photoresistance 302 312 is converted to a time signal with the flicker state of gated sweep light source 304 at different time, and then photoresistance 302 is exposed by control system 308.In addition, for example dispose a lens combination 310 between scanning light source 304 and base material 300, this lens combination 310 can will be shone on photoresistance 302 after the light adjustment of being sent of scanning light source 304 (for example pattern dwindle, amplify, focus on or defocus etc.).
Please refer to Fig. 4 equally, the base material 300 on the carrier 316 moves along base material moving direction 314.Control system 308 will desire to be transferred to the time signal that figure on the photoresistance 302 is decoded into one dimension, in the time signal may command scanning light source 304 of this one dimension each pointolite 306 different time bright, state goes out.Because base material 300 moves along base material moving direction 314, so have a relative motion between base material 300 and the scanning light source 304, therefore each pointolite 306 in line source 304a, 304b, 304c, 304d is at bright, the state that goes out that different time presented, and whether the promptly corresponding exposure of photoresistance 302 on diverse location.After scanning light source 304 scannings, scanning light source 304 can be transferred to two-dimensional pattern 312 on the photoresistance 302.
Then please refer to Fig. 5, the scanning pattern synoptic diagram that it forms on photoresistance for the pointolite of arranging by many rows according to a preferred embodiment of the present invention.Can know by Fig. 5 and to learn, pointolite 306 constitutes line source 304a, 304b, 304c, 304d in the mode that many rows arrange, owing on direction 318, have a displacement S between line source 304a and the line source 304b, this displacement S is the 1/n of the spacing P between pointolite 306 and consecutive point light source in the same line source, and wherein n is the sum of line source.Similarly, between line source 304b and the line source 304c, on direction 318, equally also has displacement S between line source 304c and the line source 304d.
Move along base material moving direction 314 by base material 300, line source 304a, 304b, 304c, 304d can expose along 230 pairs of photoresistances 302 of scanning pattern.Interval between each scanning pattern 230 is displacement S.If with four winding displacement light source 304a, 304b, 304c, 304d is example, the resolution of this scanning light source 304 on direction 318 will promote 4 times into original single arrangement.
Then please refer to Fig. 6, it is for carrying out the scanning pattern synoptic diagram of multiple scaaning on photoresistance according to the pointolite of a kind of single arrangement of a preferred embodiment of the present invention.Among above-mentioned Fig. 4, pointolite 306 is arranged in a plurality of line source 304a, 304b, 304c, 304d to promote the resolution on the direction 318.But except the arrangement mode that changes pointolite 306, the scan mode that also can change scanning light source 304 reaches preferable resolution.Learn that by knowing among Fig. 6 pointolite 306 is arranged in a line source 304 in the mode of single arrangement, and line source 304a arranges along direction 318.The direction 318 that single line source 304 is arranged is vertical with scanning pattern 230.In addition, the scanning that line source 304 carries out repeatedly along 230 pairs of photoresistances of scanning pattern 302, the path of scanning each time all differs a distance A with the path of preceding single pass, and this distance A is the 1/n of pointolite spacing P, and n is a natural number.
Please refer to Fig. 7 at last, it carries out the scanning pattern synoptic diagram of multiple scaaning on photoresistance for the pointolite according to the another kind of single arrangement of a preferred embodiment of the present invention.Be by repeatedly scanning photoresistance 302 to be exposed equally, but in Fig. 7, the modes of utilizing angle between the direction 318 that scanning pattern 230 and pointolite 306 arrange to be not equal to 90 degree scan.Because the angle between the direction 318 that scanning pattern 230 and pointolite 306 are arranged is not equal to the cause of 90 degree, can therefore the resolution of scanning also can be promoted to some extent less than the spacing P between the pointolite 306 between the adjacent scan paths 230 apart from B.
Among above-mentioned Fig. 6 and Fig. 7, be not equal to the modes of 90 degree respectively with the angle between the direction of repeatedly scanning and gated sweep path and pointolite arrangement, further promote resolution.Yet the people Ying Ke that is familiar with this technology learns easily, above-mentioned dual mode is done suitable combination can obtain better resolution.
In addition, among above-mentioned Fig. 3 to Fig. 7, only with bright, the go out State Control of scanning light source 304 in the mobile collocation of base material 300, so that photoresistance 302 is exposed at different time.Yet, the relative motion on the base material 300 between photoresistance 302 and the scanning light source 304, also can by scanning light source 304 even lens combination 310 move or lens combination 310 in partial mirrors or lens rotation or move and finish.
In sum, base board exposure device of the present invention and method have following advantage at least:
1. base board exposure device of the present invention and method directly are transferred to the mode of set pattern with scanning on the photoresistance, can save the time of light shield manufacture.
2. base board exposure device of the present invention and method can need not made corresponding light shield at different patterns and significantly reduce on cost of manufacture with various design transfer to photoresistance.
3. in base board exposure device of the present invention and the method, to photoresistance, can make the automatic mass of integrated circuit more easy design transfer by the mode that scans.
4. base board exposure device of the present invention and method can be in the time of productions, the real time modifying line design, and the brief development time, and make a small amount of various customization individual design become possibility.
5. in the base board exposure device of the present invention, the relative position of light source and lens combination immobilizes, and the aligning potential difference is immobilized (not changing because of changing light shield), and it is more or less freely that location positioning is proofreaied and correct.
6. base board exposure device of the present invention can save the expense of all light shield maintenances and preservation.
Claims (28)
1. base board exposure device, can a photoresist layer with design transfer to a substrate surface on, it is characterized in that this base board exposure device comprises at least:
One light source, this light source are disposed at surface one specified distance that has this photoresist layer apart from this base material, and this light source comprises a plurality of pointolites; And
The one scan control system, this scanning control system is a signal according to time change with this pattern transfer, to control the flicker state of each those pointolite at different time, and this control system makes this base board exposure device have scan function, can make this light source carry out single pass at least, make this photoresist layer exposure along the one scan path.
2. base board exposure device as claimed in claim 1 is characterized in that, this base material is printed circuit board (PCB) (PCB) base material.
3. base board exposure device as claimed in claim 1 is characterized in that, this base material is various encapsulation base material.
4. base board exposure device as claimed in claim 1 is characterized in that, the single arrangement of those pointolites is to constitute a line source.
5. base board exposure device as claimed in claim 1 is characterized in that, those pointolites are arranged arrangement to constitute a plurality of line sources more.
6. base board exposure device as claimed in claim 5 is characterized in that, each those line source is arranged in parallel with each other.
7. base board exposure device as claimed in claim 6, it is characterized in that, has a displacement in orientation between the line source that each those line source is adjacent, so that those pointolites in those line sources are the arrangement of dislocation each other, to improve the resolution of exposure.
8. base board exposure device as claimed in claim 1 is characterized in that, those pointolites be light emitting diode and laser diode one of them.
9. base board exposure device as claimed in claim 1 is characterized in that, this scan function is to reach to move this light source.
10. base board exposure device as claimed in claim 1 is characterized in that, this scan function is to reach to move this base material.
11. base board exposure device as claimed in claim 1 is characterized in that, this device comprises that more a carrier is to carry this base material.
12. base board exposure device as claimed in claim 11 is characterized in that, this scan function is to reach to move this carrier.
13. base board exposure device as claimed in claim 1 is characterized in that, this device more comprises a lens combination, and this lens combination is disposed on the light conduct route between this scanning light source and this base material.
14. base board exposure device as claimed in claim 13 is characterized in that, this scan function is to reach with the rotation of at least one part of lens combination inside.
15. base board exposure device as claimed in claim 13 is characterized in that, this scan function is to reach with moving of at least one part of lens combination inside.
16. a base plate exposure method, can with design transfer to a substrate surface a photoresist layer on, it is characterized in that this base plate exposure method comprises at least:
Provide a light source in surface one specified distance that has this photoresist layer apart from this base material, wherein this scanning light source comprises a plurality of pointolites; And
One control system is provided, this control system is a signal according to time change with this pattern transfer, controlling the flicker state of each those pointolite at different time, and provides scan function, make this light source carry out single pass at least, so that this photoresist layer exposure along the one scan path.
17. base plate exposure method as claimed in claim 16 is characterized in that, this base material is a substrate for printed circuit board.
18. base plate exposure method as claimed in claim 16 is characterized in that, this base material is various encapsulation base material.
19. base plate exposure method as claimed in claim 16 is characterized in that, this scan function is to reach to move this light source.
20. base plate exposure method as claimed in claim 16 is characterized in that, this scan function is to reach to move this base material.
21. base plate exposure method as claimed in claim 16 is characterized in that, this method more comprises provides a carrier to carry this base material.
22. base plate exposure method as claimed in claim 21 is characterized in that, this scan function is to reach to move this carrier.
23. base plate exposure method as claimed in claim 16 is characterized in that, this method more comprises provides a lens combination on the light conduct route between this scanning light source and this base material.
24. base plate exposure method as claimed in claim 23 is characterized in that, this scan function is to reach with the rotation of at least one part of lens combination inside.
25. base plate exposure method as claimed in claim 23 is characterized in that, this scan function is to reach with moving of at least one part of lens combination inside.
26. base plate exposure method as claimed in claim 16 is characterized in that, those pointolites be light emitting diode and laser diode one of them.
27. base plate exposure method as claimed in claim 16 is characterized in that, those pointolites are arranged at least one line source, and this line source is axially vertical with the direction of scanning, scan in the mode of single pass at least.
28. base plate exposure method as claimed in claim 16 is characterized in that, those pointolites are arranged at least one line source, and this line source axially and the direction of scanning out of plumb, scan in the mode of single pass at least.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 01143414 CN1241068C (en) | 2001-12-26 | 2001-12-26 | Base plate exposure device and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 01143414 CN1241068C (en) | 2001-12-26 | 2001-12-26 | Base plate exposure device and method |
Publications (2)
Publication Number | Publication Date |
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CN1412623A true CN1412623A (en) | 2003-04-23 |
CN1241068C CN1241068C (en) | 2006-02-08 |
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CN 01143414 Expired - Lifetime CN1241068C (en) | 2001-12-26 | 2001-12-26 | Base plate exposure device and method |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004109393A1 (en) * | 2003-06-11 | 2004-12-16 | Chang-Ming Yang | An image pickup system |
CN100463485C (en) * | 2005-08-01 | 2009-02-18 | 佳世达科技股份有限公司 | Multiple light source scanning system and its method |
WO2010105382A1 (en) * | 2009-03-17 | 2010-09-23 | Wuxi Suntech Power Co., Ltd. | Irradiating a plate using multiple co-located radiation sources |
CN101875482B (en) * | 2009-04-28 | 2013-04-24 | 财团法人工业技术研究院 | Apparatuses for fabricating micro patterns using laser diode array and methods for fabricating micro patterns |
CN103105724A (en) * | 2011-11-15 | 2013-05-15 | 台湾创新记忆体股份有限公司 | Quantum dot exposure plate and photolithography technique with the same |
-
2001
- 2001-12-26 CN CN 01143414 patent/CN1241068C/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004109393A1 (en) * | 2003-06-11 | 2004-12-16 | Chang-Ming Yang | An image pickup system |
CN100463485C (en) * | 2005-08-01 | 2009-02-18 | 佳世达科技股份有限公司 | Multiple light source scanning system and its method |
WO2010105382A1 (en) * | 2009-03-17 | 2010-09-23 | Wuxi Suntech Power Co., Ltd. | Irradiating a plate using multiple co-located radiation sources |
CN101970168A (en) * | 2009-03-17 | 2011-02-09 | 无锡尚德太阳能电力有限公司 | Irradiating a plate using multiple co-located radiation sources |
CN101875482B (en) * | 2009-04-28 | 2013-04-24 | 财团法人工业技术研究院 | Apparatuses for fabricating micro patterns using laser diode array and methods for fabricating micro patterns |
CN103105724A (en) * | 2011-11-15 | 2013-05-15 | 台湾创新记忆体股份有限公司 | Quantum dot exposure plate and photolithography technique with the same |
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