CN1409881A

CN1409881A - Monolithically integrated micro-waveguide component for over coupling high frequencies

Info

Publication number: CN1409881A
Application number: CN 00816939
Authority: CN
Inventors: 斯特芬·科恩; 格莱格·杰哈德
Original assignee: Marconi Communications GmbH
Current assignee: Telent GmbH
Priority date: 1999-12-10
Filing date: 2000-11-21
Publication date: 2003-04-09
Also published as: EP1247306A1; NO20022719L; WO2001043223A1; AU1721901A; NO20022719D0; DE19959708A1

Abstract

The invention relates to a monolithically integrated micro-waveguide component for overcoupling high frequencies which comprises a first micro-waveguide that is structured on a micro-waveguide chip, and comprises a second micro-waveguide that is structured on a carrier substrate. The micro-waveguides are contacted to one another by a chip through-plating. The invention provides that the micro-waveguides (14, 16) each comprise, in the contact region (12), an integrated compensating structure (42, 34, 44, 38) that serves to compensate for reflections.

Description

An one chip integrated micro-waveguide component that is used for the radio frequency overcoupling

Technical field:

The present invention relates to have an one chip integrated micro-waveguide component of the feature of enumerating at the preamble of claim 1.

Background technology:

The micro-waveguide component of general type is known.These elements are used for being coupled into by a microwave leads the frequency electromagnetic waves that provides or from this electromagnetic wave decoupling zero.These micro-waveguide components comprise a chip, an integrated conductor that is configured to a strip line or a microstrip line in this chip.As everyone knows, this conductor be set to chip above.Other circuit element such as amplifier, oscillator or like also can be integrated in this chip.This chip is arranged on last or close this Carrier of Carrier (carrier), and this Carrier has this electromagnetic conductor that is used for that is designed to a strip line or a microstrip line equally.For the conductor structure that makes chip and Carrier is connected to each other, known can the connection by bonding connection or band shape contacts with each other them.The shortcoming of this connection is, because the inductance of decoupling zero line will cause reflection to increase from such frequency electromagnetic waves (particularly frequency is higher than the electromagnetic wave of 10GHZ) decoupling zero.For compensating these reflections, circuit must afford redress.Usually, this has high space requirement to chip.Its other shortcoming is, because the relevant short wavelength with high frequency between chip and Carrier or in the build-up tolerance between line structure and the decoupling zero line causes the formation of parasitic antenna (electric capacity, inductance), this makes that compensation is more difficult.

From " DBIT-DIRECT BACKSIDE INTERCONNECTTECHNOLOGY ": IEEE, 6/97 has understood by the line structure of a path with chip and Carrier and has been connected to each other.Use this path, can be avoided by the reflection that common bonding connection or banded connection cause with allowing, but the compensation problem from the decoupling zero of RF signal is not still solved.

Summary of the invention:

By comparison, the advantage that provides of one chip integrated micro-waveguide component according to the present invention is: the decoupling compensation of relevant RF signal is realized with a simple mode.Because have an integrated collocation structure in each contact zone that the microwave of chip and Carrier is led, thereby available plain mode generation RF decoupling zero, and the electrical design of contact zone can reflection compensation be that possible a kind of like this mode produces.

In a preferred embodiment of the invention, the part of path of leading by microwave is formed collocation structure taked measure, this microwave is led the live width that has with this conversion coupling.Therefore this collocation structure can be integrated in a simple manner by the wiring of leading at contact zone regulation microwave.Particularly lead and form a capacitive effect part of path in the contact zone, and the microwave relevant with Carrier led when forming an inductive effects part of path in the contact zone when the microwave relevant with chip.The interaction that compensation can the ground connection by these part of paths and micro-waveguide component in the contact zone be provided with realizes, so that the decoupling zero line structure that the decoupling zero line structure of RF signal and the 50ohm standard microwave with enough accuracy are led is corresponding.

Further preferred embodiment of the rpesent invention can draw from other features of enumerating at dependent claims.

Description of drawings:

The present invention will describe in detail in a following embodiment with reference to relevant drawings.Wherein:

Fig. 1 shows the schematic section by an one chip integrated micro-waveguide component; And

Fig. 2 is the schematic plan view of one chip integrated micro-waveguide component.

Embodiment:

Fig. 1 shows the one chip integrated micro-waveguide component 10 in the longitudinal section.Contact zone 12 shows first microwave and leads 14 and second microwave and lead 16.Microwave is led 14 and is arranged on the chip 18, for example on a GaAs (GaAs) chip.Chip 18 has for example thickness of 100 μ m.Second microwave is led 16 and is arranged on the Carrier 20, for example an Al ₂O ₃On (aluminium oxide) substrate.This Carrier has for example thickness of 254 μ m.Have a metal coating 24 above the Carrier 20, and Carrier 20 following 26 has a metal coating 28.Here metal coating 24 and 28 passes through straight-through contact 30 (or through hole) electrical connection as shown in the figure.Metal coating 24 and 28 makes the earth potential that is integrated into the circuit in the micro-waveguide component 10 (not illustrating separately) effective in a kind of known mode.These for example are provided with, and one chip is integrated in the chip 18.

Schematic plan view as shown in Figure 2, microwave are led 14 and are comprised first part of path 32 and second part of path 34, and microwave is led 16 and comprised first part of path 36 and second part of path 38.Part of path 34 and 38 is arranged in contact zone 12.Metal coating 24 forms a groove 40 in contact zone 12, this groove is visible in Fig. 2 and it 12 engages along the contact zone.The 30 symmetry ground, straight-through contact that connects Carrier 20 is arranged around contact zone 12.

Microwave is led 14 and is comprised widely for the part of path 32 of a and widely be the part of path 34 of b, and part of path 34 is wideer than part of path 32.One pyramidal structure 42 forms in part of path 32 and 34 s' junction.

Microwave lead 16 have wide for the part of path 36 of c and widely be the part of path 38 of d.Here, wide d is less than wide c.In direct contact zone 12, part of path 38 forms a contact area 44.Microwave is led 14 and 16 and is connected to each other via a straight-through contact 46 by chip 18.Should straight-through 46 connecting line highway sections 34, contact and 38.

Microwave lead 14 part of path 32 and 34 and microwave to lead 16 part of path 36 all be strip line or microstrip line, and part of path 38 forms altogether ground roll and leads.

Be formed for compensating the integrated collocation structure of the reflection in the contact area 12 at part of path 34 and 38.By be arranged on metal coating 24 () on, part of path 22 forms a 50ohm microstrip line.Microwave is led 16 part of path, the 36 same 50ohm microstrip lines that form, and the metal coating 28 below the Carrier 20 is done adjustment at this.

Because according to the design of contact zone 12 of the present invention, the electromagnetism wave energy is coupled respectively or decoupling zero.In this connection, perhaps microwave lead 14 can be the input and microwave lead 16 can be output, perhaps opposite, microwave lead 16 be the input and microwave lead 14 be output.For example, according to the present invention, concerning the one chip integrated micro-waveguide component, frequency is the signal of 40GHz, its reflected value＜27dB.Transmission attenuation is lower than 0.3db on transmission quantity.Remove collocation structure is integrated into 12 China and foreign countries, contact zone, it also has another advantage, and promptly at the fit on of micro-waveguide component 10, chip 18 can be installed on the Carrier 20 in self-regulating mode.Come in contact by welding, the surface tension by welding produces the adjusting of chip 18 on Carrier 20 with a kind of self-regulation mode in the zone of contact zone 12 simultaneously.Therefore the difference of build-up tolerance aspect can be reduced to minimum so that the parasitic antenna that produces is little of ignoring in contact zone 12, and the generation meeting of these parasitic antennas is influential to compensating.

Claims

1, the one chip integrated micro-waveguide component that is used for the radio frequency overcoupling, have and be formed on a microwave and lead first microwave on the chip and lead and be formed on on-chip second microwave of a Carrier and lead, lead by the described microwave in the straight-through contact (through hole) of chip and to interconnect, it is characterized in that: each microwave leads (14,16) (12) have an integrated collocation structure (42 that is used for reflection compensation in the contact zone, 34,44,38).

2, micro-waveguide component as claimed in claim 1 is characterized in that: first microwave is led (14) and form a capacitive effect part of path (34) in contact zone (12).

3, micro-waveguide component as claimed in claim 2 is characterized in that: microwave is led a part of path (32) of (14) and is received in the part of path (34) by a pyramidal structure (42).

4, as the described micro-waveguide component of above any one claim, it is characterized in that: microwave is led (16) and form an inductive effects part of path (38) in contact zone (12).

5, micro-waveguide component as claimed in claim 4 is characterized in that: part of path (38) is that ground roll is led altogether.

6, as the described micro-waveguide component of above any one claim, it is characterized in that: microwave is led the part of path (32 and 34) of (14) and part of path (36) that microwave is led (16) is strip line or microstrip line.

7, as the described micro-waveguide component of above any one claim, it is characterized in that: the metal coating (24) between chip (18) and Carrier substrate (20) forms a groove (14) in the contact zone.