CN1402577A - Storage module for mobile phone - Google Patents

Storage module for mobile phone Download PDF

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Publication number
CN1402577A
CN1402577A CN02127764A CN02127764A CN1402577A CN 1402577 A CN1402577 A CN 1402577A CN 02127764 A CN02127764 A CN 02127764A CN 02127764 A CN02127764 A CN 02127764A CN 1402577 A CN1402577 A CN 1402577A
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China
Prior art keywords
memory
mobile phone
sdram
aforementioned
type
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Granted
Application number
CN02127764A
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Chinese (zh)
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CN1193636C (en
Inventor
费尔南多·罗毛
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Apple Inc
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GENERAL ELECTRIWUES MOTEUR
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Publication of CN1402577A publication Critical patent/CN1402577A/en
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Publication of CN1193636C publication Critical patent/CN1193636C/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W8/00Network data management
    • H04W8/18Processing of user or subscriber data, e.g. subscribed services, user preferences or user profiles; Transfer of user or subscriber data
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W52/00Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/02Power saving arrangements
    • H04W52/0209Power saving arrangements in terminal devices
    • H04W52/0261Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level
    • H04W52/0274Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level by switching on or off the equipment or parts thereof
    • H04W52/028Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level by switching on or off the equipment or parts thereof switching on or off only a part of the equipment circuit blocks
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W88/00Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02Terminal devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention relates to a mobile telephone comprising a memory module which is cheaper and faster storing speed than the present technology. Therefore, the invention is provided to integrate the memory component of SDRAM with memory module. The SDRAM memory capable of being used by mobile telephone on non-standby state limits the refresh operation.

Description

The memory module that is used for mobile phone
Technical field
The invention provides a kind of mobile phone that has special memory module.Its objective is to a kind of cheap memory module of using than reality of mobile phone equipment, and it has these features, on the access rapidity of the memory capacity of data and data, better than reality.
Background technology
Generally speaking, the field of the invention is a mobile phone.In this field, mobile phone or mobile telephone set constantly are enhanced, and have therefore improved the quality in the communication of being set up, and have made numerous additional functions constantly increase.These improvement have some influences on the different electric framework of phone, particularly in memory module framework or memory block.In fact, those progress noted earlier need the memory capacity of memory module constantly to increase.
Be the term of pointing out will use in the specification of back, repeat earlier here to be used to realize memory module the definition of the different parts of frequent use:
-flash memory: substitute the memory of the random access memory of said function, and it can preserve the information that it held under situation about not powering up.It is more expensive relatively;
-random access memory: impermanent, fast, be used for interim more or less stored information, code or memory of data;
-Yi loses: describe the data that are stored in the random access memory.These data are lost when including the system closing of random access memory.As expansion, this term also can be represented memory;
Therefore-static memory: do not need the memory of periodic refresh, it is very idle with respect to dynamic memory, therefore and quicker, but more expensive;
-dynamic random access memory: need refresh so that do not lose the random access memory of its canned data;
-refreshing: an electronics very in a small amount in random access memory injects, and its transistor that slowly unloads that is used to reload is not so that lose the data of its storage.This action need time and make memory in the time of several nanoseconds, can not work;
-SRAM (English Static Random Access Memory (static RAM)): static RAM, opposite with the DRAM memory, it does not need to refresh, and inexpensive.The SRAM memory is used to high-speed memory (buffer storage) or when we do not wish to refresh;
-DRAM (English Dynamic Random Access Memory (dynamic random access memory)): dynamic random access memory;
-buffer storage (or buffer storage): between processor and main storage or mass storage, in order to quicken the memory that the globality the subject of knowledge and the object of knowledge adds, because buffer storage is a static memory, therefore than main storage faster (also more expensive);
-first-level buffer memory: the buffer storage that is positioned at processor inside;
-level 2 buffering memory: be installed in the buffer storage on the motherboard, rather than in processor inside;
-mass storage: all are a support integral of (autonome) and static storage independently, that is to say with a standard interface and can be under the situation that does not have the power supply support retention data;
-the access time: be used in the needed time of memory access information for processor;
-SDRAM (English Sinchronous Dynamic Random AccessMemory (Synchronous Dynamic Random Access Memory)): the memory of DRAM type, but have access time less than 5 times;
-" flash memory layer (strata flash) ": have the memory of the flash type of a plurality of simulation layers, it can optimize the silicon face that is used to store.If the cooperation data compression, this just can produce the advantage that doubles.
The demand of memory module all has same character: the memory capacity that suitable needs must be arranged, the time of short as far as possible access storage data, the components consume of little employed memory, especially true to the mobile phone that is in holding state, clearly these also need alap cost.
In the prior art, shown in Figure 1, we have mobile telephone set 100, and it comprises a memory module 101 that is made of one the first flash memory F1 and the second flash memory F2 basically.In addition, mobile phone also has an antenna 102 that links to each other with send-receive unit 103 outside other, and a microprocessor 104, it can pass through a communication bus 105, particularly with memory module 101 and send-receive unit 103 swap data groups.
Typically in cell phone, each flash memory F1 and F2 be by the memory capacity about one 4 Mbytes (in invention only be one nonrestrictive tell-tale), this for must be in mobile phone 100 integral body of stored parameter and application be enough.Yet the flash memory F1 and the F2 of formation memory module 101 as all other flash memories, are expensive.In addition,, that is to say that it has the short access time if it is fast for the access of ordinal type, so for the access of casual cnalogy, it will be slowly many.These two defectives are very bad for the performance of the manufacturing cost of mobile phone and mobile phone.
Summary of the invention
The objective of the invention is to overcome these different problems.In fact, the invention provides and a kind ofly have suitable memory capacity, and not expensive and than the memory of the prior art memory module of fast access more.For this reason, invention proposes to change the memory module architectures of mobile phone, particularly is incorporated into the memory cell of a SDRAM type.Seen as our front, the memory of the type comprises in the arbitrary access good especially in the data fast access that it held.
In addition, the present invention can overcome the shortcoming of using the SDRAM memory cell to be brought, both has been used for the big power consumption of its SDRAM memory that refreshes in the mobile phone standby mode.Standby mode is corresponding to the activity that reduces of phone, for example when it is not communicated by letter with the distance communicating person.As everyone knows, refresh and may consume 2 milliamperes of telephone cells, this is to be fatal under the prerequisite of major limitation phone power autonomous.For improving this point, it is not to use the SDRAM memory when being in holding state at mobile phone just that invention proposes, and has therefore just limited its refresh operation.
Therefore invention relates to a kind of mobile phone, it particularly comprises an antenna, a send-receive unit, a microprocessor that is used for the managing mobile phone allomeric function, and a memory module that is used to store mobile phone data and/or set of applications, it is characterized in that memory module comprises a mass storage and a SDRAM type memory unit that does not refresh at the mobile phone holding state.
In the specific embodiments according to the mobile phone of inventing, we can not refresh the SDRAM memory member in the mobile phone holding state.We can also be when the interruption of each mobile phone holding state, is stored in total data in the mass storage towards the memory member transmission of SDRAM type.
According to a different embodiment, the data acquisition system that is transmitted in SDRAM type memory unit can depend on the character that holding state interrupts, the total data that perhaps systematically is configured in the mass storage to be stored.In all situations, the transfer of data between the memory member of mass storage and SDRAM type typically has the speed (representative value is not the restriction of invention) of per second 80 Mbytes.
According to invention, mass storage can be " flash memory layer " type, and the capacity that under compact model, can have 2 Mbytes, and the memory member of SDRAM type is corresponding to aforementioned size and typically have the memory capacity of 4 megabits under same pattern.
At last, microprocessor can comprise the static RAM of a SRAM type, as first order buffer storage, perhaps as second level buffer storage, if microprocessor has oneself a high-speed memory, and the memory unit of SDRAM type can be carried out the work of second level buffer storage.
Description of drawings
Invention and different application thereof will be by being better understood with reference to the accompanying drawings description.This only is a tell-tale statement and do not limit invention.Accompanying drawing illustrates:
-Fig. 1 narrated, a mobile phone that comprises the prior art memory module;
-Fig. 2, one comprises the mobile phone according to the memory module of invention.
Embodiment
Fig. 2 shows a mobile phone 200 according to invention.It always has an antenna 201 that is connected to the similar transmitter-receiver of prior art unit 202.Related data message, the exchange of address or command messages all are to transmit in phone by communication bus 205.Bus connects 203, one memory modules 204 of a microprocessor and send-receive unit 202 basically.
On Fig. 2, mobile phone 200 comprises two memory members in by the memory module 204 that discontinuous blockade line defined.We can see the memory member 207 of first memory parts 206 and a SDRAM type especially, and it has substituted one of two flash memory F1 of the prior art or F2.Its unique existence is to guarantee that the data access that it comprises is faster than the access that is realized in the flash memory that is substituted.In addition, to compare the flash memory that is substituted cheap for the SDRAM memory.Therefore because invention, we had one on some data access fast and not expensive improvement memory module.
Yet the framework that has the SDRAM memory has the big shortcoming of power consumption, and particularly when mobile phone is in holding state: in fact, the SDRAM memory is a dynamic memory, and it need be refreshed.Therefore for SDRAM, a refresh operation wants the mean consumption battery of mobile telephone to reach 2 milliamperes, and this is very big: this mobile phone is wanted big twice at the mobile phone of the relative prior art of power consumption of holding state.
The improvement that invention is brought is not carry out the refresh operation of SDRAM memory during the mobile phone standby.For this reason, one when mobile phone enters into holding state, just stops the refresh operation of SDRAM memory.Therefore, the data that it held just face the danger of losing.The solution that invention is proposed is as follows: one when mobile phone disengaging holding state, the data that are contained in the first memory parts 206 just connect 209 quilts towards the SDRAM memory transfer by one at once, and this connection can be communication bus 205 in other embodiments.Therefore the data of being transmitted are replaced the data that are present in SDRAM when mobile phone enters into holding state, and undoubtedly these data are not changed owing to refresh at holding state.
For the memory capacity that makes memory module 204 equals capacity of the prior art, following properties is advocated for memory member 206 and 207: SDRAM207 has the capacity of 4 Mbytes, can be accommodated in whole application and parameter in the memory module 204 so that can hold those.Replacing the first memory unit 206 of mass storage is the memory of " flash memory layer " type.Therefore, for meeting the memory capacity of prior art memory module, we have use " flash memory layer " memory of 2 Mbytes capacity of compact model, and this is corresponding to 4 Mbytes of non-compact model.
Typically, the data transmission rate between " flash memory layer " memory 206 and SDRAM memory 209 is per second 80 Mbytes (nonrestrictive representative values), and this can transmit four Mbytes in 50 milliseconds.
In some inventive embodiments, mobile phone 200 has special application, can make it detect the character of the incident that causes leaving holding state, particularly survey the incident whether an incoming call type is arranged, whether be one and for example on keyboard, push caused incident by the mobile phone user.According to the character of the incident of leaving holding state that is detected, different special application and parameter can be transmitted to SDRAM memory 207 from " flash memory layer " memory 206.Certainly, these special application and parameter are that those can be used after the incident of being surveyed.
Just now in the described example different solutions can be arranged: special parameter that is transmitted and application can be that those will be transmitted, perhaps the preferential situation of basis is transmitted, and next is that other is present in parameter and application in " flash memory layer " memory.In the embodiment of a less change, in case leave holding state, application and parameter in whole being contained in " flash memory layer " memory are systematically transmitted.
When mobile phone is in holding state, be the work that the memory 208 of SRAM type guarantees phone.The SRAM memory can have less memory capacity, because at holding state, phone only uses several application and parameter.Therefore it can be integrated in the microprocessor 203 and replace first order buffer storage, and SDRAM memory 207 can be compared to second level buffer storage.
Particularly for the described capacity of memory of the memory of " flash memory layer " type and corresponding SDRAM type and speed demand corresponding to reality.If these need for improved, on this or other meaning, we can change these capacity and/or speed.This can realize by keeping consistency between capacity of mass storage (for example " flash memory layer " type) and SDRAM memory span.

Claims (10)

1. mobile phone (200), particularly comprise an antenna (201), a send-receive unit (202), a microprocessor (203) that is used for managing mobile phone (200) allomeric function, and the memory module (204) of the set of data that are used to store mobile phone (200) and/or application, it is characterized in that memory module (204) comprises a mass storage (206) and a SDRAM type memory unit (207) that does not refresh at mobile phone (200) holding state.
2. according to the described mobile phone of aforementioned claim (200), it is characterized in that the total data that is stored in the mass storage (206) is transferred in the memory unit (207) of SDRAM type when the interruption of each mobile phone (200) holding state.
3. according to the described mobile phone of aforementioned claim (200), the total data that it is characterized in that being transferred in the SDRAM type memory parts (207) depends on the character that holding state interrupts.
4. according to the described mobile phones in one of claim 2 or 3 (200), it is characterized in that being transferred to the total data of the total data representative storage in mass storage (206) in the SDRAM type memory parts (207).
5. according to the described mobile phone of one of claim 2 to 4 (200), it is characterized in that the transmission between the memory member (207) of mass storage (206) and SDRAM type has one for using enough speed, approximately per second 80 Mbytes or more.
6. according to the described mobile phone of one of aforementioned claim (200), it is characterized in that mass storage (206) is the memory of a flash memory layer type.
7. according to the mobile phone (200) of aforementioned claim, it is characterized in that " flash memory layer " memory (206) has the memory capacity of compact model two Mbytes.
8. according to the described mobile phone of one of aforementioned claim (200), the memory unit (207) that it is characterized in that the SDRAM type has the memory capacity of one four Mbytes.
9. according to the described mobile phone of one of aforementioned claim (200), it is characterized in that microprocessor (203) comprises the static RAM (208) of a SRAM type, and as first order buffer storage.
10. according to the described mobile phone of one of aforementioned claim (200), it is characterized in that the work of memory member (207) the execution second level buffer storage of SDRAM type.
CNB021277648A 2001-08-09 2002-08-08 Storage module for mobile phone Expired - Lifetime CN1193636C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0110668A FR2828616B1 (en) 2001-08-09 2001-08-09 MEMORY MODULE FOR MOBILE TELEPHONE
FR0110668 2001-08-09

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CN1402577A true CN1402577A (en) 2003-03-12
CN1193636C CN1193636C (en) 2005-03-16

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FR (1) FR2828616B1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI101669B1 (en) * 1996-02-23 1998-07-31 Nokia Mobile Phones Ltd Multi-service mobile station
DE19635733A1 (en) * 1996-09-03 1998-03-12 Siemens Ag Telecommunications terminal device with controller
FI990038A (en) * 1999-01-11 2000-07-12 Nokia Mobile Phones Ltd Procedure for refreshing a dynamic memory

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Publication number Publication date
CN1193636C (en) 2005-03-16
FR2828616A1 (en) 2003-02-14
FR2828616B1 (en) 2004-01-30

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Owner name: MOBI ANTENNA CORP.

Free format text: FORMER OWNER: SAGEM MOBILE PHONE CO., LTD.

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Patentee before: Sagem Mobile Phone Co.,Ltd.

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Granted publication date: 20050316