CN1393908A - Process for preparing small doped polysilicon - Google Patents
Process for preparing small doped polysilicon Download PDFInfo
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- CN1393908A CN1393908A CN 01129599 CN01129599A CN1393908A CN 1393908 A CN1393908 A CN 1393908A CN 01129599 CN01129599 CN 01129599 CN 01129599 A CN01129599 A CN 01129599A CN 1393908 A CN1393908 A CN 1393908A
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- gas source
- polycrystalline silicon
- doped polycrystalline
- type doped
- manufacture method
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Abstract
The invented method for producing the N type adulterated polysilicon is as follows. The reacting gas source, the N type adulterated gas source and the gas source of the catalyzer are passed into the reaction chamber of the chemical vapor deposition. The processing step of the chemical vapor deposition is carried out so as to form the thin film of the N type adulterated polysilicon.
Description
The invention relates to a kind of manufacture method of doped polycrystalline silicon, particularly relevant for a kind of manufacture method of N type doped polycrystalline silicon.
In the technology of integrated circuit, considerable role is being played the part of in the formation of polysilicon, during especially at formation MOS assembly grid (Gate) or as polysilicon interconnect structure (Polysilicon Interconnect Structure).Generally speaking, the deposition of polysilicon is used Low Pressure Chemical Vapor Deposition more, and (Low Pressure Chemical Vapor Deposition LPCVD) carries out, in order to reduce the resistivity of polysilicon, and implant admixture in polysilicon layer, to improve the electrical conductivity of polysilicon layer.The mode of carrying out polysilicon doping comprises that the mode of carrying out along with deposition reaction implants admixture, utilizes ion to implant that (Ion Implantation) mode is implanted admixture or the mode by High temperature diffusion (Diffusion) drives in admixture.
Utilizing the above-mentioned admixture implantation mode of carrying out along with low-pressure chemical vapor deposition reaction when carrying out polysilicon doping, different admixtures reaction mechanism difference in deposition process is very big for the deposition rate influence of polysilicon membrane.For example when deposition P type doped polycrystalline silicon, use Boroethane, only need to increase a little concentration and just can significantly promote reaction rate, have the effect of catalyst as dopant gas source.And when deposition N type doped polycrystalline silicon, use hydrogen phosphide as dopant gas source, because hydrogen phosphide has the chemically relation of stereochemical structure effect, increase concentration and can reduce reaction rate on the contrary.
In addition, deposit spathic silicon is to use silane or chlorine-containing silane as reacting gas source, and polysilicon membrane growth speed can and be successively decreased along with chlorinity increase in the reacting gas source.So, in general polysilicon deposition technology many with silane as reacting gas source, and limited to the selectivity of reacting gas source on the technology.
And in general polysilicon deposition technology, deposition rate is to be controlled by the change of temperature, by improving temperature to increase deposition rate, has also caused the change of polysilicon structure simultaneously.
Therefore, one of the object of the invention is to provide a kind of manufacture method of N type doped polycrystalline silicon, improves with chlorine-containing silane etc. to come from deposition rate in the multi crystal silicon chemical depositing operation as reacting gas.
Another purpose of the present invention is to provide a kind of manufacture method of N type doped polycrystalline silicon, utilizes catalyst to improve with silica-based alkanes (silane or chlorine-containing silane) etc. and comes from deposition rate in the multi crystal silicon chemical depositing operation step as reacting gas.
Another purpose of the present invention is avoided the change of temperature to polysilicon structure in the manufacture method that a kind of N type doped polycrystalline silicon is provided in processing step, chemically utilize a catalyst to improve deposition rate, to reduce heat budget (Thermal Budget).
For achieving the above object, the invention provides a kind of manufacture method of N type doped polycrystalline silicon, the method comprises provides a wafer, and wafer is placed in the reative cell.Then, feeding comprises a reacting gas source, a N type dopant gas source and a catalyst gas source in reative cell.Then, carry out a chemical vapor deposition method step, to form N type doped polycrystalline silicon film.
Major advantage of the present invention is, increases the selectivity of gas on the technology; Improvement as the deposition rate of reacting gas source in the multi crystal silicon chemical depositing operation, is avoided the change of temperature to polysilicon structure with silica-based alkanes (silane or chlorine-containing silane) etc. in technology, to reduce heat budget.
Describe two preferred embodiments of the present invention in detail below in conjunction with accompanying drawing:
Fig. 1 is the manufacture method profile of the N type doped polycrystalline silicon of first embodiment of the invention.
Fig. 2 is the manufacture method profile of the N type doped polycrystalline silicon of second embodiment of the invention.
Description of reference numerals:
102,202: reative cell
104,204: reacting gas source
106:N type dopant gas source
108,206: catalyst
Embodiment
First embodiment:
Please refer to Fig. 1, a semiconductor wafer at first is provided, this semiconductor wafer 100 is placed in the reative cell 102, reative cell 102 can be boiler tube formula reative cell or single wafer reacting furnace (Single Wafer Chamber).
Then, in reative cell 102, feed reacting gas source 104, N type dopant gas source 106 and catalyst 108.Reacting gas source 104 is silica-based alkanes or chlorine-containing silane for example, comprises monosilane (SiH
4), dichloride silane (SiH
2Cl
2), tri-chlorination silane (SiHCl
3) and silicon tetrachloride (SiCl
4) etc.N type dopant gas source 106 for example is hydrogen phosphide (PH
3).Catalyst 108 comprises Boroethane (B for example for can promote the medicament of polysilicon deposition speed
2H
6) etc.Carry out a chemical vapor deposition method step then, to form N type doped polycrystalline silicon.
In above-mentioned processing step owing in reative cell 102, add a catalyst 108 to increase the deposition rate of polysilicon, therefore can use chlorine-containing silane as the reacting gas source of chemical vapor deposition of polysilicon to increase the selectivity of gas on the technology.
In addition, making N type doped polycrystalline silicon is with hydrogen phosphide (PH
3) as N type dopant gas source 106.Because hydrogen phosphide has the chemically relation of stereochemical structure effect, increase the deposition rate that concentration can reduce polysilicon on the contrary.Therefore, adding one can increase the catalyst 108 of polysilicon deposition speed, for example Boroethane (B in above-mentioned processing step
2H
6), as long as increase the deposition rate that the concentration of a little catalyst 108 just can significantly improve polysilicon.Though use Boroethane (B
2H
6) as catalyst, can make polysilicon implant P type admixture, but employed catalyst 108 content are less than the content of N type dopant gas source 106.Therefore, the doped polycrystalline silicon that is deposited is still mixed for the N type.
Second embodiment:
Please refer to Fig. 2, a semiconductor wafer at first is provided, this semiconductor wafer 200 is placed in the reative cell 202, reative cell 202 can be boiler tube formula reative cell or single wafer reacting furnace (Single Wafer Chamber).
Then, in reative cell 202, feed reacting gas source 204 and catalyst 206.Reacting gas source 204 is a chlorine-containing silane for example, comprises dichloride silane (SiH
2Cl
2), tri-chlorination silane (SiHCl
3) and silicon tetrachloride (SiCl
4) etc.Catalyst 206 comprises Boroethane (B for example for can promote the medicament of polysilicon deposition speed
2H
6) etc.Carry out a chemical vapor deposition method step then, on wafer, to form polysilicon layer.
Afterwards, carry out a N type admixture implantation step, to form N type doped polysilicon layer.The method of execution N type admixture implantation step is ionic-implantation for example, and the ion of being implanted for example is phosphonium ion.
In above-mentioned technology owing in reative cell 202, add a catalyst 206 to increase the deposition rate of polysilicon, therefore can use chlorine-containing silane as the reacting gas source of chemical vapor deposition of polysilicon to increase the selectivity of gas on the technology.
In addition, though use Boroethane (B
2H
6) as catalyst, can make polysilicon implant P type admixture, but employed catalyst 206 content are very little.Therefore, as long as add an admixture implantation step, the doped polycrystalline silicon that is deposited is mixed for the N type.
In sum, the present invention can use chlorine-containing silane (SiH
2Cl
2, SiH
2Cl
3, SiCl
4) wait as the reacting gas source in the multi crystal silicon chemical depositing operation, to increase the selectivity of gas on the technology; In the multi crystal silicon chemical depositing operation, utilize the polysilicon deposition speed as reacting gas source such as silica-based alkanes (silane or chlorine-containing silane) with enhancement by a catalyst; In technology, avoid the change of temperature, utilize a catalyst to improve deposition rate, to reduce heat budget with chemical method to polysilicon structure.
A preferred embodiment of the present invention openly as above, but it is not in order to limiting the present invention, any change in the present invention conceives scope all drops in protection scope of the present invention.
Claims (10)
1. the manufacture method of a N type doped polycrystalline silicon, this method comprises the following steps: to provide a wafer; This wafer is placed in the reative cell; In this reative cell, feed one group of gas source; Carry out a chemical vapor deposition method step, to form a N type doped polycrystalline silicon film, it is characterized in that: this group gas source comprises reacting gas source, N type dopant gas source and catalyst gas source.
2. the manufacture method of N type doped polycrystalline silicon according to claim 1 is characterized in that: this reacting gas source be selected from group that monosilane, dichloride silane, tri-chlorination silane and silicon tetrachloride form one of them.
3. the manufacture method of N type doped polycrystalline silicon according to claim 1 is characterized in that: this catalyst comprises Boroethane.
4. the manufacture method of N type doped polycrystalline silicon according to claim 1 is characterized in that: this dopant gas source comprises hydrogen phosphide.
5. the manufacture method of a N type doped polycrystalline silicon, this method comprises the following steps: to provide a wafer; Make this wafer place a reative cell; In this reative cell, feed one group of gas source; Carry out a chemical vapor deposition method step, to form a N type doped polycrystalline silicon film, it is characterized in that: this group gas source comprise chlorine-containing silane, hydrogen phosphide and the Boroethane that is used to increase deposition rate as gas source, wherein the content of Boroethane is less than the content of hydrogen phosphide.
6. the manufacture method of N type doped polycrystalline silicon according to claim 5 is characterized in that: this chlorine-containing silane be selected from group that dichloride silane, tri-chlorination silane and silicon tetrachloride form one of them.
7. the manufacture method of a N type doped polycrystalline silicon, this method comprises the following steps: to provide a wafer; This wafer is placed in the reative cell; In reative cell, feed one group of gas source; Carry out a chemical vapor deposition method step, to form a polysilicon membrane; Carry out a N type admixture and implant processing step, to form a N type doped polycrystalline silicon film, it is characterized in that: the gas source of feeding comprises chlorine-containing silane and is used to increase the catalyst of deposition rate as gas source.
8. the manufacture method of N type doped polycrystalline silicon according to claim 7 is characterized in that: this chlorine-containing silane be selected from group that dichloride silane, tri-chlorination silane and silicon tetrachloride form one of them.
9. the manufacture method of N type doped polycrystalline silicon according to claim 7 is characterized in that: this catalyst comprises Boroethane.
10. the manufacture method of N type doped polycrystalline silicon according to claim 7 is characterized in that: the method that this N type admixture is implanted processing step comprises ionic-implantation, and the admixture of being implanted comprises phosphonium ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01129599 CN1393908A (en) | 2001-06-28 | 2001-06-28 | Process for preparing small doped polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01129599 CN1393908A (en) | 2001-06-28 | 2001-06-28 | Process for preparing small doped polysilicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1393908A true CN1393908A (en) | 2003-01-29 |
Family
ID=4669299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01129599 Pending CN1393908A (en) | 2001-06-28 | 2001-06-28 | Process for preparing small doped polysilicon |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140678A (en) * | 2009-12-17 | 2011-08-03 | 维塞尔·雷万卡 | Method, device and CVD-Siemens system for producing uniform polysilicon rod |
-
2001
- 2001-06-28 CN CN 01129599 patent/CN1393908A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140678A (en) * | 2009-12-17 | 2011-08-03 | 维塞尔·雷万卡 | Method, device and CVD-Siemens system for producing uniform polysilicon rod |
| CN102140678B (en) * | 2009-12-17 | 2015-12-09 | 维塞尔·雷万卡 | Produce the method for even polycrystalline silicon rod, device and CVD-Siemens System |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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