CN1226079A - Method of forming thin film for semiconductor device - Google Patents

Method of forming thin film for semiconductor device Download PDF

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CN1226079A
CN1226079A CN 98100527 CN98100527A CN1226079A CN 1226079 A CN1226079 A CN 1226079A CN 98100527 CN98100527 CN 98100527 CN 98100527 A CN98100527 A CN 98100527A CN 1226079 A CN1226079 A CN 1226079A
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vapor deposition
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黄喆周
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Abstract

A method of forming a thin film for a secmiconductor device which applices disilane (Si2H6) to chemical vapour deposition is capable of improving deposition rate and step coverage of thin film althrough the thin film is deposited at lower temp., thereby improving productivity and reliability of the semiconductor device. In order to form various thin films, Si2H6 and N2O, or Si2H6 and O2 are applied for an oxide film, Si2H6 and NH3 for nitride film, Si2H6, N2O and NH3 for a nitride-oxide film, Si2H6, O2 and PH3 or TMOP for a PSG film, and Si2H6, O2, B2H6 or TMOB, and PH3 or TMOP for a BPSG film. A system therefor is used among an atmospheric pressure chemical vapor deposition system, low pressure chemical vapor deposition system, and plasma chemical vapor deposition system.

Description

Method of forming thin film for semiconductor device
The present invention relates to a kind of film that is used for semiconductor device, particularly a kind of improving one's methods for the semiconductor device film former, this method adopts disilane to carry out chemical vapor deposition, and the substep that can improve deposition speed and film covers, although film is deposit at low temperatures.
Usually, the method for manufacturing semiconductor device mainly comprises film former and form pattern on film.The film that is used for making semiconductor device can be divided into insulation film, thin dielectric film, conductive film, flat film and passivation film etc. as required.The most frequently used material that is used for making thin dielectric film is silica (SiO 2) and silicon nitride (Si 3N 4), the material that is used to make conductive film is polysilicon and tungsten silicide (W XSi Y), the material that is used for making insulation film is silica (SiO 2) and phosphorosilicate glass (PSG), the material that is used for making flat film is phosphorosilicate glass (PSG) and boron-phosphorosilicate glass (BPSG), silicon nitride then is used for making protection film.
The method of deposition film has physical deposition, vacuum deposition, chemical vapor deposition (CVD) and sputter etc., and wherein chemical vapor deposition is the most frequently used method.Use the chemical gas-phase deposition method film former, on substrate, form material gas exactly, on the substrate or the particle diffusion that produces in the gas on the surface of substrate.The most frequently used chemical vapor deposition device has normal pressure chemical vapor deposition (APCVD) equipment, low-pressure chemical vapor phase deposition (LPCVD) equipment and plasma enhanced CVD (PECVD or plasma deposition) equipment.
At first, the normal pressure chemical gas-phase deposition method that is suitable for normal pressure chemical vapor deposition (APCVD) equipment is used to the dipole device at first and generates polysilicon layer and develops, it under low temperature, atmospheric pressure 760 torr conditions to polysilicon (SiH 4) thermal decomposition, deposit becomes polysilicon membrane.The normal pressure chemical vapor deposition device carries out chemical vapor deposition at low temperatures, and deposition speed is fast, but that substep covers is inhomogeneous, and through vapor reaction, the impurity height of particle.The normal pressure chemical vapor deposition is the most frequently used chemical vapor deposition techniques, is mainly used in silica (SiO 2), phosphorosilicate glass (PSG), boron-phosphorosilicate glass (BPSG) or polysilicon epitaxial diposition.
Compare with the normal pressure chemical vapor deposition, be suitable for low-pressure chemical vapor phase deposition equipment low-pressure chemical vapor phase deposition (LPCVD) method improvement cover step by step, and the thickness of film is even, but, the deposition speed of this method is slow, thereby reduced the large-scale production ability, and required processing at high temperature.The low-pressure chemical vapor phase deposition method is used for making polysilicon, silica (SiO 2), silicon-oxygen nitride (SiO XN Y), phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG) deposit.In order to improve the shortcoming that low-pressure chemical vapor phase deposition equipment need at high temperature be worked, be developed into plasma enhanced CVD (PECVD) equipment now.Plasma enhanced CVD equipment adopts a kind of energy to make material gas and heat produce the reaction acceleration, thereby needing to have avoided the shortcoming of processing at high temperature.The plasma body reinforced chemical vapor deposition method that is suitable for plasma enhanced CVD equipment is to work at low temperatures, discharge is reacted acceleration to produce in the reative cell of decompression (approximately 10-100 handkerchief), thereby discharges plasma and encourage gaseous molecular to make it enter state of activation.The most frequently used plasma chemical vapor deposition method is to adopt high frequency to produce plasma to a parallel-plate-type electrode.The frequency range that produces plasma in this way is between 15.56 megahertzes at 50 kilo hertzs.Because plasma enhanced CVD is to work under lower temperature, and deposition speed is fast, be the most widely used a kind of in the various deposition process therefore.
Making such as oxide-film, polysilicon film, tungsten silicide film, phosphorosilicate glass (PSG) film, and during boron-phosphorosilicate glass (BPSG) film etc., adopting polysilicon (SiH usually 4) or tetraethyl orthosilicate (TEOS) as material gas.Table 1 provides the deposition conditions that each chemical vapor deposition device adopts, i.e. material gas, temperature and pressure.The substep that table 2 provides the every kind of film that is shaped according to the listed condition deposit of table 1 covers and deposition speed.No matter that is to say, in order to generate a kind of oxide-film of routine, be that a kind of chemical vapor deposition device, can adopt tetraethyl orthosilicate and O 2, tetraethyl orthosilicate and O 3, polysilicon and nitrogen oxide or polysilicon and O 2As material gas.The temperature and pressure that every kind of chemical vapor deposition device adopted has been shown in the table 1.That is, during with low-pressure chemical vapor phase deposition equipment, film is big about 1.0 torrs, 430 to 800 ℃ of following deposits, and during with plasma enhanced CVD equipment, film at 3.0 torrs, be lower than 450 ℃ of following deposits.During equally, with the normal pressure chemical vapor deposition device be under atmospheric pressure, temperature is lower than deposit under 450 ℃ of conditions.
In addition, adopt dichlorosilane (SiH 2Cl 2) and NH 3, or polysilicon and NH 3Come the deposit nitride film.When doing this film, use low-pressure chemical vapor phase deposition equipment, temperature is 700 ℃, and pressure is 0.4 torr, and during with plasma enhanced CVD equipment, temperature is lower than 450 ℃, and pressure is lower than 3.0 torrs.
In order to generate phosphorosilicate glass or boron phosphorous silicate glass film (planar film), tetraethyl orthosilicate, O 2Or O 3, and hydrogen phosphide or the former inferior phosphide of tetramethyl (TMOP); Tetraethyl orthosilicate, O 2Or O 3, the former boron ester of diborane or tetramethyl (TMOB), and hydrogen phosphide or the former inferior phosphide of tetramethyl all can be used separately as material gas.During with low-pressure chemical vapor phase deposition equipment, deposition conditions is that pressure is 1.0 to 4.0 torrs, temperature is 610 to 700 ℃, and be that temperature is less than about 450 ℃ with the deposition conditions of plasma enhanced CVD equipment, pressure is lower than 3.0 torrs, is that temperature is lower than 450 ℃ with the deposition conditions of normal pressure chemical vapor deposition device.Below gas in the bracket () in gas one hurdle in table 1 and the table 2 can replace the outer gas of bracket.Promptly write into O 2(O 3) situation, O 3Can replace O 2
Yet, when using the conventional method film former, promptly use method listed in the table 1 and condition film former, thin film deposition speed is low, and substep covers also low, as shown in table 2.
For this reason, the object of the present invention is to provide a kind of method that generates film of semiconductor device, it adopts disilane as material gas rather than polysilicon or tetraethyl orthosilicate, thereby the deposition speed and the substep that can improve film cover.
Table 1
Gas Deposition process
Low-pressure chemical vapor phase deposition Plasma enhanced CVD The normal pressure chemical vapor deposition
Temperature (℃) Pressure (torr) Temperature (℃) Pressure (torr) Temperature (℃) Pressure (torr)
Oxide-film Tetraethyl orthosilicate/O 2 ≈700 ≈0.3 ≤450 ≤3.5 ≤450 Atmospheric pressure
Polysilicon/N 2O ≈800 ≈1.0 ≤450 ≤3.0 × ×
Polysilicon/O 2 ≈430 ≈0.3 × × ≤450 Atmospheric pressure
Nitride film Dichlorosilane/NH 3 ≈700 ≈0.4 × × × ×
Polysilicon/NH 3 ≈700 ≈0.4 ≤450 ≤3.0 × ×
Boron phosphorous silicate glass film Tetraethyl orthosilicate/O 2( O 3)/hydrogen phosphide (the former inferior phosphide of the tetramethyl)/former boron ester of tetramethyl ≈610 ≈1.0 ≤450 2.3～2.8 ≤450 Atmospheric pressure
Tungsten silicide film Polysilicon/tungsten fluoride 200～ 650 ?0.2～2 × × × ×
Can obviously find out other advantage of the present invention, purpose and feature from following description.
Will understanding more fully be arranged to the present invention from the detailed description and the accompanying drawings hereinafter.Accompanying drawing only is an illustration purpose for example, the present invention is not had restricted.
Fig. 1 is the longitudinal section of semiconductor chip, shows the substep coverage condition.
Table 3 is listed and adopted each process equipment according to the present invention is a kind of condition of semiconductor device film former, and table 4 is according to the deposition speed of each film of the listed condition acquisition of table 3 and covers feelings step by step
Table 2
Gas Deposition process
Low-pressure chemical vapor phase deposition Plasma enhanced CVD The normal pressure chemical vapor deposition
Deposition speed (/min) Substep covers (%) Deposition speed (/min) Substep covers (%) Deposition speed (/min) Substep covers (%)
Oxide-film Tetraethyl orthosilicate/O 2 ≈100 ≈90 ?3000- ?8000 ≤60 ≤4000 ≤60
Polysilicon/N 2O ≤30 ≈100 ?3000- ?8000 ≤60 ?× ×
Polysilicon/O 2 ≈100 ≤60 ?× × ≈3000 ≤60
Nitride film Dichlorosilane/NH 5 ≈30 ≈100 ?× × ?× ×
Polysilicon/NH 3 × × ?3000- ?8000 ≤60 ?× ×
Boron phosphorous silicate glass film Tetraethyl orthosilicate/O 2(O 3)/hydrogen phosphide (the former inferior phosphide of the tetramethyl)/former boron ester of tetramethyl ≈200 ≈80 ?3000- ?5000 ≈75 ?3000- ?5000 ≈80
Condition.From table 4, can see substep coverage condition as shown in fig. 1.That is, on semiconductor chip 1, formed an insulation film 2, insulation film 2 has been eroded predetermined area form a cavity 3.At this moment, that thickness partly that film 4 is fixed on cavity 3 one sidewalls is called A, and film 4 is called B at that thickness partly of the upper surface of insulation film 2, and then the formula of substep covering is that A/B * 100=covers (%) step by step.That is when A and B had same thickness, substep was covered as 100%, and higher substep covers the semiconductor device that is more suitable in high integration.
Below the condition that adopts each process equipment film former according to the present invention will be described.
The condition of this method of using low-pressure chemical vapor phase deposition equipment film former at first, is described.
That is, generate oxide-film (SiO according to following condition 2).
Table 3
The gas muscle Deposition process
Low-pressure chemical vapor phase deposition Plasma enhanced CVD The normal pressure chemical vapor deposition
Temperature (℃) Pressure (torr) Temperature (℃) Pressure (torr) Temperature (℃) Pressure (torr)
Oxide-film Disilane/N 2O 500-800 ?0.1-9 ?150-750 ?0.1-9 × ×
Disilane/O 2 300-700 ?0.1-9 ?× ?× 200-650 Atmospheric pressure
Nitride film Disilane/NH 3 350-800 ?0.1-9 ?150-750 ?0.1-9 × ×
Oxynitride film Disilane/NH 3/N 2O 350-800 ?0.1-9 ?150-750 ?0.1-9 × ×
Boron phosphorous silicate glass film Disilane/hydrogen phosphide/O 2The former boron ester of/tetramethyl 250-800 ?0.1-9 ?150-750 ?0.1-9 ?250-650 Atmospheric pressure
The former boron ester of the former inferior phosphide/tetramethyl of disilane/tetramethyl 250-800 ?0.1-9 ?150-750 ?0.1-9 ?200-650 Atmospheric pressure
Phosphorous silicate glass film Disilane/O 2/ hydrogen phosphide (the former inferior phosphide of tetramethyl) 200-700 ?0.1-9 ?150-750 ?0.1-9 ?200-650 Atmospheric pressure
Tungsten silicide Disilane/tungsten fluoride 200-650 ?0.1-9 ?× ?× × ×
Temperature range in the reative cell is 500 to 850 ℃, and pressure limit is 0.1 to 9 torr.Disilane (Si 2H 6), i.e. main material gas, the speed with 10 to 400sccm flows to reative cell, and nitrogen oxide then is to flow into reative cells with 100 to 10000sccm (here, sccm means standard cm 3/ min).At this moment, more satisfactory temperature and pressure scope is respectively 650 to 800 ℃ and 0.3 to 5 torr.The oxide-film that becomes of deposit under these conditions, its deposition speed be 15 to 500 dusts/minute, substep is covered as 95%.
Table 4
Gas Deposition process
Low-pressure chemical vapor phase deposition Plasma enhanced CVD The normal pressure chemical vapor deposition
Deposition speed (/min) Substep covers (%) Deposition velocity (/min) Substep covers (%) Deposition velocity (/min) Substep covers (%)
Oxide-film Disilane/N 2O ?15-500 ≥95 ?50-9000 ≥90 × ×
Disilane/O 2 15-1000 ≥90 × × 500- 5000 ≥90
Nitride film Disilane/NH 3 ?5-500 ≥95 ?50-9000 ≥90 × ×
Boron phosphorous silicate glass film Disilane/hydrogen phosphide (the former inferior phosphide of tetramethyl)/diborane (the former boron ester of tetramethyl)/O2 ?50-9000 ≥90 ?50-9000 ≥90 ?500- ?5000 ≥90
Phosphorous silicate glass film Disilane/O 2/ hydrogen phosphide (the former inferior phosphide of tetramethyl) ?50-6000 ≥90 ?50-9000 ≥90 ?500- ?5000 ≥90
When generating oxide-film with another kind of method, the temperature and pressure scope in the reative cell is respectively 300 to 700 ℃ and 0.1 to 9 torr.Disilane (Si 2H 6) with 10 to 500sccm inflow reative cells, and O 2Then flow into reative cell with 20 to 1000sccm.At this moment, more satisfactory temperature and pressure scope is respectively 300 to 550 ℃ and 0.1 to 5 torr.The oxide-film that becomes of deposit under these conditions, its deposition speed be 15 to 1000 dusts/minute, substep is covered as 90%.
Use polysilicon and N 2O, or polysilicon and O 2As the conventional method of material gas, its deposition speed be respectively be lower than 10 dusts/minute and be about 100 dusts/minute, the present invention uses disilane and N 2O, or disilane and O 2As the low-pressure chemical vapor phase deposition of material gas, show its deposition speed improving a lot than above-mentioned conventional method.In addition, the substep that generates oxide-film with method of the present invention covers above 90%, and uses polysilicon and O 2The substep of conventional method cover and to be about 60%.In addition, although the chemical vapor deposition that the present invention adopts is a film former at low temperatures, it covers step by step still and can be improved.
Generate nitride film (Si according to following condition 3N 4).
Temperature range in the reative cell is 350 to 800 ℃, and pressure limit is 0.1 to 9 torr.Disilane (Si 2H 6) flow into reative cell, NH with 5 to 500sccm speed 3Speed with 15 to 1000sccm flows into reative cell.At this moment, more satisfactory temperature and pressure scope is respectively 400 to 800 ℃ and 0.3 to 5 torr.When nitride film when deposit is shaped under these conditions, its deposition speed scope be 5 to 500 dusts/minute, substep covers and surpasses 95%.Adopt dichlorosilane (SiH 2Cl 2) and NH 3Temperature in the conventional method of deposit nitride film, reative cell is 700 ℃, and pressure is 0.4 torr.The deposition speed of this method be 30 dusts/minute.Use method of the present invention to generate nitride film, the temperature in the reative cell can be reduced to 350 ℃ from 700 ℃, and the deposition speed of film can also be greatly improved on the contrary, although be deposit at low temperatures, substep of the present invention covers and also do not have very big decline.
Generate oxynitride film (SiO under the following conditions XN Y).
Temperature range in the reative cell is 350 to 800 ℃, and pressure limit is 0.1 to 9 torr.Adopt disilane and NH 3, or adopt disilane and N 2Carry out deposit.At this moment, more satisfactory temperature and pressure scope is respectively 400 to 800 ℃ and 0.3 to 5 torr.
Deposit boron phosphorous silicate glass film, i.e. planar film under the following conditions.
Temperature range in the reative cell is 350 to 800 ℃, and pressure limit is 0.1 to 9 torr.Disilane flows into reative cell, former inferior phosphide of tetramethyl (TMOP) or hydrogen phosphide (PH with 50 to 800sccm speed 3) flow into reative cell, former boron ester of tetramethyl (TMOB) or diborane (B with 150 to 2400sccm speed 2H 6) flow into reative cell with 15 to 200sccm speed, and O 2Speed with 15 to 400sccm flows into reative cell, thereby generates boron phosphorous silicate glass film.The deposition speed that obtains boron phosphorous silicate glass film according to above-mentioned condition with method of the present invention be 50 to 9000 dusts/minute, this with tetraethyl orthosilicate and O 2Or O 3, hydrogen phosphide (PH3) or the former inferior phosphide of tetramethyl and diborane or the former boron ester of tetramethyl obtain deposition speed 200 dusts of boron phosphorous silicate glass film/minute compare with conventional method, be improved.In addition, be covered as 90% with the substep of the inventive method deposit boron phosphorous silicate glass film, and be covered as 80% with the substep of conventional method deposit.Though boron phosphorous silicate glass film is deposit at low temperatures, the quality and the growth rate of film all are improved.
Phosphorous silicate glass film is that the temperature and pressure in reative cell is respectively deposit under the condition of 200 to 700 ℃ and 0.1 to 9 torr.Disilane, and former inferior phosphide of tetramethyl (hydrogen phosphide) and O 2Respectively with 50 to 800sccm with flow into reative cell with 15 to 500sccm speed.At this moment, the more satisfactory pressure limit of the method according to this invention deposit phosphorous silicate glass film is 0.3 to 5 torr.Under these conditions, the deposition speed of phosphorous silicate glass film be 50 to 6000 dusts/minute, and substep cover to surpass 90%.
Be widely used in the tungsten silicide (W of the gate of metal-oxide-semiconductor's memory XSi Y) film, when adopting disilane and tungsten fluoride, its deposition temperature and pressure limit are respectively 200 to 650 ℃ and 0.1 to 9 torr.The tungsten silicide film of Sheng Chenging like this, its resistance ratio is low with the resistance of the tungsten silicide film of the conventional method deposit of polysilicon and tungsten fluoride, and substep covers then than latter height.In addition, adopt the crystal grain of the tungsten silicide film that method of the present invention obtains big.
The second, the condition of plasma enhanced CVD equipment film former is used in narration.
Oxide-film (SiO 2) generate under the following conditions.Temperature and pressure scope in the reative cell is respectively 150 to 750 ℃ and 0.1 to 9 torr, disilane and N 2O flows into reative cell with 50 to 500sccm and 100 to 5000sccm speed respectively.At this moment, more satisfactory pressure limit is 0.2 to 5.3 torr.The deposition speed of oxide-film be 50 to 9000 dusts/minute, substep is covered as 90%, all than with the raising of the oxide-film of conventional method deposit many, with the deposition speed of the oxide-film of conventional method deposit be 3000 to 8000 dusts/minute, the substep covering is lower than 60%.
Secondly, nitride film (Si 3N 4) deposition pressure be 0.1 to 9 torr, temperature range is 150 to 750 ℃.Disilane flows into reative cell, ammonia (NH with 10 to 500sccm speed 3) flow into reative cell with 15 to 2000sccm speed.At this moment, more satisfactory pressure limit is 0.1 to 5.5 torr.The method according to this invention, the deposition speed of oxide-film be 50 to 9000 dusts/minute, substep cover to surpass 95%, both all than conventional method with polysilicon and NH 3Generate the height of nitride film.
Oxynitride film (SiO XN Y) deposition pressure be 0.1 to 9 torr.Temperature range in the reative cell is 150 to 750 ℃, disilane and ammonia (NH 3) all flow into reative cell.
Boron phosphorous silicate glass film is deposit under the following conditions.
Temperature range and pressure limit in the reative cell are respectively 250 to 800 ℃ and 0.1 to 9 torr.Disilane flows into reative cell, former inferior phosphide of tetramethyl (TMOP) or hydrogen phosphide (PH with 70 to 1000sccm speed 3) with 150 to 3000sccm, the former boron ester of tetramethyl (TMOB) or diborane (B 2H 6) with 15 to 300sccm, O 2Speed with 15 to 500sccm flows into reative cell, thereby forms boron phosphorous silicate glass film.The deposition speed of the boron phosphorous silicate glass film that the method according to this invention obtains with above-mentioned condition be 50 to 9000 dusts/minute, than using tetraethyl orthosilicate, O 2Or O 3, the former inferior phosphide of hydrogen phosphide or tetramethyl, and the deposition speed of the boron phosphorous silicate glass film that obtains with conventional method of diborane or the former boron ester of tetramethyl improved many, the deposition speed of conventional method be 3000 to 5000 dusts/minute.The method according to this invention, the substep of boron phosphorous silicate glass film cover and surpass 90%, and the substep of the boron phosphorous silicate glass film that obtains with conventional method covers and is about 75%.
The deposition pressure of phosphorous silicate glass film is 0.1 to 9 torr.Temperature range in the reative cell is 150 to 700 ℃, former inferior phosphide of tetramethyl or hydrogen phosphide, and O 2Flow into reative cell with 50 to 1000sccm and 15 to 500sccm speed respectively.At this moment, the method according to this invention, the deposition speed of phosphorous silicate glass film be 50 to 9000 dusts/minute, substep cover to surpass 90%.
At last, the condition of using normal pressure chemical vapor deposition device film former is described.
Oxide-film (SiO 2) be at atmospheric pressure, deposit is shaped disilane and O under 200 to 650 ℃ of conditions 2Flow into reative cell.At this moment, the deposition speed scope of using method of the present invention to generate oxide-film be 500 to 5000 dusts/minute, substep covers and surpasses 80%, than 60% substep that uses conventional method to generate oxide-film cover improved many.
Boron phosphorous silicate glass film is at atmospheric pressure, deposit under 200 to 650 ℃ of conditions, disilane, the former inferior phosphide of tetramethyl or hydrogen phosphide, the former boron ester of tetramethyl or diborane and O 2, flow into reative cell respectively.At this moment, according to method of the present invention, the deposition speed scope of boron phosphorous silicate glass film be 500 to 5000 dusts/minute between, substep cover to surpass 90%, all than using conventional method to generate the height of boron phosphorous silicate glass film.
Phosphorous silicate glass film is at atmospheric pressure, deposit under 200 to 650 ℃ of conditions, disilane, the former inferior phosphide of tetramethyl or hydrogen phosphide and O 2Flow into reative cell.At this moment, cover according to the substep of method phosphorous silicate glass film of the present invention and to surpass 90%, more many than the raising of using conventional method.
Listed data are carried out the chemical vapor deposition film forming according to method of the present invention with disilane as can be seen from table 3 and table 4, and the deposition speed of film and substep cover and all to be improved, this be because disilane the chemical combination stability of structure be lower than silane (SiH 4), be easy at low temperatures scatter, thereby have fast gas distribution rate, so thin film deposition speed is fast.
As mentioned above, according to method of the present invention, adopt disilane to carry out the film that chemical vapor deposition generates semiconductor device by using, the deposition speed and the substep that can improve film cover, thereby improve the productivity ratio and the reliability of semiconductor device.
Though the embodiments of the invention purpose of Jie Shaoing is to illustrate the present invention here, under the situation of those skilled in the art's listed scope and spirit in not exceeding claim of the present invention, can be used for various modifications, replenishes and change.

Claims (24)

1, a kind of processing method is about to semiconductor chip and puts in the reative cell of a chemical vapor deposition device, and reative cell remains on predetermined pressure and temperature, thereby film former on semiconductor chip, a kind of disilane that adopts is the method for forming thin film for semiconductor device as main material gas.
2, method according to claim 1, wherein, film is meant a kind of in oxide-film, nitride film, oxynitride film, boron-phosphorosilicate glass (BPSG) film, phosphorosilicate glass (PSG) film and the tungsten silicide film.
3, method according to claim 2, wherein, a kind of method that generates oxide-film is to adopt disilane and nitrogen oxide (N 2O), be suitable for chemical vapor deposition (CVD) equipment.
4, method according to claim 3, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 500 to 800 ℃, and pressure limit is 0.1 to 9 torr.
5, method according to claim 3, wherein, described chemical vapor deposition device is that plasma strengthens vapor deposition (PCVD) equipment, and the temperature range in the reative cell is 150 to 750 ℃, and pressure limit is 0.1 to 9 torr.
6, method according to claim 2, wherein, the method that generates oxide-film is to adopt disilane and oxygen (O 2), be suitable for chemical vapor deposition (CVD) equipment.
7, method according to claim 6, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 300 to 700 ℃, and pressure limit is 0.1 to 9 torr.
8, method according to claim 6, wherein, described chemical vapor deposition device is normal pressure chemical vapor deposition (APCVD) equipment, and the temperature range in the reative cell is 200 to 650 ℃, and pressure is atmospheric pressure.
9, method according to claim 2, wherein, the method that generates nitride film adopts disilane and ammonia (NH 3), be suitable for chemical vapor deposition (CVD) equipment.
10, method according to claim 9, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 350 to 800 ℃, and pressure limit is 0.1 to 9 torr.
11, method according to claim 9, wherein, described chemical vapor deposition device is plasma chemical vapor deposition (PCVD) equipment, and the temperature range in the reative cell is 150 to 750 ℃, and pressure limit is 0.1 to 9 torr.
12, method according to claim 2, wherein, the method that generates oxynitride film adopt disilane, ammonia (NH 3) and nitrogen oxide (N 2O), be suitable for chemical vapor deposition (CVD) equipment.
13, method according to claim 12, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment.Temperature range in the reative cell is 350 to 800 ℃, and pressure limit is 0.1 to 9 torr.
14, method according to claim 12, wherein, described chemical vapor deposition device is plasma chemical vapor deposition (PCVD) equipment, and the temperature range in the reative cell is 150 to 750 ℃, and pressure limit is 0.1 to 9 torr.
15, method according to claim 2, wherein, the method that generates boron phosphorous silicate glass film adopt disilane, hydrogen phosphide (PH 3), oxygen (O 2) and the former boron ester of tetramethyl, or adopt disilane, the former inferior phosphide of tetramethyl, O 2, and the former boron ester of tetramethyl, be suitable for chemical vapor deposition (CVD) equipment.
16, method according to claim 15, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 250 to 800 ℃, and pressure limit is 0.1 to 9 torr.
17, method according to claim 15, wherein, described chemical vapor deposition device is plasma chemical vapor deposition (PCVD) equipment, and the temperature range in the reative cell is 150 to 750 ℃, and pressure limit is 0.1 to 9 torr.
18, method according to claim 15, wherein, described chemical vapor deposition device is normal pressure chemical vapor deposition (APCVD) equipment, and the temperature range in the reative cell is 200 to 650 ℃, and pressure is atmospheric pressure.
19, method according to claim 2, wherein, the method that generates phosphorous silicate glass film be adopt disilane, oxygen (O 2) and hydrogen phosphide (PH 3), or adopt disilane, oxygen (O 2) and the former inferior phosphide of tetramethyl, be suitable for chemical vapor deposition (CVD) equipment.
20, method according to claim 19, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 200 to 700 ℃, and pressure limit is 0.1 to 9 torr.
21, method according to claim 19, wherein, chemical vapor deposition device is plasma chemical vapor deposition (PCVD) equipment, and the temperature range in the reative cell is 150 to 750 ℃, and pressure limit is 0.1 to 9 torr.
22, method according to claim 19, wherein, described chemical vapor deposition device is normal pressure chemical vapor deposition (APCVD) equipment, and the temperature range in the reative cell is 200 to 650 ℃, and pressure is atmospheric pressure.
23, method according to claim 2, wherein, the method that generates tungsten silicide film adopts disilane and tungsten fluoride (WF 6), be suitable for chemical vapor deposition (CVD) equipment.
24, method according to claim 23, wherein, described chemical vapor deposition device is low-pressure chemical vapor phase deposition (LPCVD) equipment, and the temperature range in the reative cell is 200 to 650 ℃, and pressure limit is 0.1 to 9 torr.
CN 98100527 1998-02-12 1998-02-12 Method of forming thin film for semiconductor device Pending CN1226079A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317423C (en) * 2000-11-14 2007-05-23 积水化学工业株式会社 Method and device for atmospheric plasma processing
CN100344790C (en) * 2001-11-30 2007-10-24 乔治洛德方法研究和开发液化空气有限公司 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition technology
CN101577221B (en) * 2008-05-05 2010-11-10 中芯国际集成电路制造(北京)有限公司 Polysilicon membrane forming method and polysilicon gate forming method
CN101258260B (en) * 2005-09-06 2012-11-21 国立大学法人东北大学 Film material and method for prediction of film material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317423C (en) * 2000-11-14 2007-05-23 积水化学工业株式会社 Method and device for atmospheric plasma processing
CN100344790C (en) * 2001-11-30 2007-10-24 乔治洛德方法研究和开发液化空气有限公司 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition technology
CN101258260B (en) * 2005-09-06 2012-11-21 国立大学法人东北大学 Film material and method for prediction of film material
US8679369B2 (en) 2005-09-06 2014-03-25 Tohoku University Film-forming material and method for predicting film-forming material
CN101577221B (en) * 2008-05-05 2010-11-10 中芯国际集成电路制造(北京)有限公司 Polysilicon membrane forming method and polysilicon gate forming method

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