CN1391266A - Process for generating window in ligh-molecular diectric layer and its structure - Google Patents
Process for generating window in ligh-molecular diectric layer and its structure Download PDFInfo
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- CN1391266A CN1391266A CN 01121173 CN01121173A CN1391266A CN 1391266 A CN1391266 A CN 1391266A CN 01121173 CN01121173 CN 01121173 CN 01121173 A CN01121173 A CN 01121173A CN 1391266 A CN1391266 A CN 1391266A
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Abstract
A method for generating an opening in high-molecular dielectric layer includes providng a substrate, generating an electric conductive layer and a high-molecular dielectric layer on it, heat treating for hardening said dielectric layer, generating mask layer, defining mask layer and dielectric layer to form an opening, and local hardening by high-energy light, electronic or ionic beam.
Description
The present invention relates to semiconductor device manufacturing method, particularly relate to and a kind ofly form a method of inlaying opening at the polymer electrolyte dielectric layer.
The existing technology of making dual-metal inserting is the technology that a kind of interlayer hole and plain conductor form simultaneously.Form earlier one dielectric layer on underlying structure, and with after its planarization, according to the position of the pattern and the interlayer hole opening of required plain conductor, etching dielectric layer is to form the vertical interlayer hole opening with of horizontal irrigation canals and ditches again.Then, deposition one deck conductive layer makes it fill up horizontal irrigation canals and ditches and vertical interlayer hole opening on underlying structure, and is last, with chemical mechanical milling method (Chemical-MechanicalPolishing; CMP) unnecessary conductive layer is removed after, form plain conductor and interlayer connector (Via) simultaneously, this is a kind of manufacturing process of dual-metal inserting.
Above-mentioned traditional dielectric layer material, for example with silica, its dielectric constant is generally all about more than 4.The dielectric layer material of silica is 0.25 micron a manufacturing process in stock size, is very suitable material.When the manufacturing of semiconductor integrated circuit element, when facing size and reaching epoch below 0.13 micron, the logic element manufacturing process of demand high conduction speed, the dielectric material of high-k is inapplicable.What replace is dielectric material with low-k, the manufacturing process of carrying out damascene.Herein, low-k is less than 4 material at dielectric constant.
Figure 1A and Figure 1B illustrate a tradition and form the method that is opened on the dielectric layer.
In Figure 1A, a conductive structure layer 102 has been formed in the substrate 100.Then form a dielectric layer 104, silicon oxide dielectric layer for example is in substrate 100 and cover conductive structure layer 102.
In Figure 1B, a hard mask layer 106 is formed on the dielectric layer 104.Utilize general photoetching technique, hard mask layer 106 and dielectric layer 104 are defined, to form a dual damascene opening 108 or lead irrigation canals and ditches (line trench) 110.Dual damascene opening 108 is the dielectric layer openings (viaopening) that comprise the lower part, and the lead irrigation canals and ditches on top.Dielectric layer opening is the conductive structure layer in order to one deck under connecting, and the lead irrigation canals and ditches form the conductor part of intraconnections (interconnect) in order to insert electric conducting material.
The hatch frame of dual damascene opening 108, the design when being adapted at the increase of element integrated level.But when if the element integrated level increases, the dielectric material of high-k also and then produces the parasitic capacitance of internal connection-wire structure, makes still defectiveness of product.Though in traditional dielectric material, have some to have low-k, for example the dielectric material of polymer electrolyte (polymer-based) because of its hardness is too low, is not enough to support internal connection-wire structure, can't replace the dielectric material of high-k effectively.Therefore its application of dielectric material of polymer electrolyte also has some restrictions, can not be widely used in the product of high integration, for example less than in 0.13 micron the manufacturing process.
In view of this, the invention provides a kind of formation one method that is opened in the polymer electrolyte dielectric layer.In the method for the invention, the polymer electrolyte dielectric layer can be hardened effectively, can be supported by the polymer electrolyte dielectric layer to guarantee internal connection-wire structure.The present invention utilizes heat treatment with the polymer electrolyte dielectric layer that evenly hardens earlier especially.After forming opening, carry out a differential hardening manufacturing process again, the open surfaces of the polymer electrolyte dielectric layer that will be exposed by opening, underhardening again.So can guarantee internal connection-wire structure.
The invention provides a kind of formation one method that is opened in the polymer electrolyte dielectric layer.Method of the present invention comprises provides a substrate, has been formed with a conductive structure layer in this substrate, a polymer electrolyte dielectric layer.Carry out a hot manufacturing process with this polymer electrolyte dielectric layer of even sclerosis.Form a mask layer on the polymer electrolyte dielectric layer.Definition mask layer and polymer electrolyte dielectric layer are to form an opening, and its split shed exposes a surface of this polymer electrolyte dielectric layer.Carry out a differential hardening manufacturing process, the polymer electrolyte dielectric layer is hardened by the surface local that opening exposes.
Wherein the differential hardening manufacturing process comprises and utilizes high-energy light, and at least one irradiation source of electron beam or ion beam carries out differential hardening.And irradiation source is incident in the direction of substrate, can comprise vertical or oblique angle incident, and substrate simultaneously is also rotatable.
The invention provides an a kind of hatch frame in the polymer electrolyte dielectric layer, this hatch frame is formed in the substrate.One thermmohardening polymer electrolyte dielectric layer is covered in this substrate, and wherein this thermmohardening polymer electrolyte dielectric layer has an opening, exposes an open surfaces of this thermmohardening polymer electrolyte dielectric layer.One mask layer is covered in this thermmohardening polymer electrolyte dielectric layer, the surface outside this opening.One irradiation sclerosis polymer electrolyte dielectric layer is on this open surfaces of this thermmohardening polymer electrolyte dielectric layer that exposes.
The present invention includes an even thermmohardening polymer electrolyte dielectric layer is the dielectric layer main body, and by the thermmohardening polymer electrolyte dielectric layer that opening exposes surface support once differential hardening is arranged.The hardness of polymer electrolyte dielectric layer can effectively support internal connection-wire structure.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborates.In the accompanying drawing:
Figure 1A-1B illustrates a tradition and forms the method that is opened on the dielectric layer; And
Fig. 2 A-2E illustrates according to the present invention, and a kind of formation one is opened on ten thousand methods in the polymer electrolyte dielectric layer.
The drawing reference numeral explanation:
100,200 substrates
102,202 conductive structure layers
104 dielectric layer with high dielectric constant
106,206 mask layers
108,208 dual-damascene structure openings
110,210 duct canals (line trench)
204,204 ' polymer electrolyte dielectric layer
212,214,216,218 radiation sources
220 substrate pivoting mechanisms
Embodiment
The present invention mainly is the dielectric material with polymer electrolyte (polymer-based), replaces the dielectric material of traditional high-k.Yet the hardness of the dielectric material of polymer electrolyte is little, must handle through a thermmohardening, and the polymer electrolyte dielectric material evenly hardens earlier.Use enough high-octane light again, electron beam or ion beam, the polymer electrolyte dielectric layer surface of rehardening and exposed by opening in the part.
The dielectric material of polymer electrolyte generally can be hardened by heat treatment.The heat treatment sclerosis can make the dielectric material of polymer electrolyte evenly harden, and it can use the mode of boiler tube or heating plate to carry out.The dielectric material of polymer electrolyte can define after thermmohardening forming required opening, but its hardness still may be not enough to support internal connection-wire structure, rehardens and can guarantee the mechanical strength of internal connection-wire structure in the part.Below with more detailed example as an illustration.
Fig. 2 A-2E illustrates according to the present invention, and a kind of formation one is opened on the method in the polymer electrolyte dielectric layer.In Fig. 2 A, a substrate 200 is arranged.Substrate 200 can have the silicon base of established element (not being shown in figure).Also can for example be to be formed with a conductive structure layer 202, for example intraconnections (interconnect) structure sheaf substrate thereon.Then form a polymer electrolyte (polymer-based) dielectric layer 204, be formed in the substrate 200 and covering conductive structure layer 202.After polymer electrolyte dielectric layer 204 formed, its hardness did not also reach applicable degree.Therefore carry out a heat treatment earlier,, earlier polymer electrolyte dielectric layer 204 is evenly hardened by for example boiler tube or heating plate.
Polymer electrolyte dielectric layer 204 also can be via the light source of enough energy, and for example ultraviolet light or laser radiation and harden also can utilize electron beam or ion beam irradiation in addition and harden.But light, electron beam or ion beam irradiation sclerosis because of material's absorption properties, are difficult for reaching the purpose of even sclerosis, cause material surface and inner hardenability that difference is arranged, and therefore can only reach the effect of differential hardening.For whole polymer electrolyte dielectric layer 204, above-mentioned irradiation sclerosis is also inapplicable.The present invention evenly to harden and the irradiation differential hardening in conjunction with heat, effectively reaches hardening effect, after being described in detail in especially.
In Fig. 2 B, when polymer electrolyte dielectric layer 204 through heat evenly after the sclerosis, existing certain degree can carry out lithography, to define the opening of design.Dielectric layer opening generally comprises, contact hole (contactopening), interlayer hole (via opening), line irrigation canals and ditches (line trench), or dual-damascene structure opening (dualdamascene opening), can be formed among the polymer electrolyte dielectric layer 204 with actual needs.Be example with dual-damascene structure opening 208 with line irrigation canals and ditches 210 among Fig. 2 B, be formed among the polymer electrolyte dielectric layer 204.The bottom of dual-damascene structure opening 208 is divided into an interlayer hole or a contact hole, exposes the conductor structure layer 202 of lower floor.In addition, a mask layer 206 also can be used, in order to form opening.These definition form the photoetching technique of opening, and are known for those skilled in the art, no longer describe in detail.And the photoetching technique that definition forms opening does not have direct relation with the harden technology of polymer electrolyte dielectric layer 204 of the present invention yet.The present invention is compatible to the definition of any opening.
Though polymer electrolyte dielectric layer 204 has evenly been hardened by heat treatment, in order more to guarantee the intensity of opening, the present invention continues to utilize the differential hardening technology, strengthens polymer electrolyte dielectric layer 204 surfaces of open circumferential.In Fig. 2 C, an irradiation source 214 is with approximately perpendicular to the direction incident of substrate 200.At this moment, by polymer electrolyte dielectric layer 204 surfaces of opening 208,210 exposures, because of irradiation source 214 irradiations, the open surfaces of polymer electrolyte dielectric layer 204 is hardened into an irradiation hardened layer 212, and polymer electrolyte dielectric layer 204 does not have the part of illuminated sclerosis with 204 ' expression at this moment.
Above-mentioned radiation source can be a high-energy light source, and for example ultraviolet light or laser have enough energy the polymer electrolyte dielectric material is absorbed, with the top layer of differential hardening polymer electrolyte dielectric material.In addition, radiation source also can comprise electronics or ion beam.
In addition, the arrangement of the irradiation source 214 among Fig. 2 C, method that neither be unique.Among Fig. 2 D, adopt at least two irradiation sources 216, be incident in substrate 200 with individual other oblique angle respectively.Be example only among Fig. 2 D, with an oblique angle incident with two irradiation sources 216.Among Fig. 2 E, but except 200 rotation at the bottom of the irradiation source also ligand and realize.For example use a single irradiation source 218, with an oblique angle incident.This moment can a pivoting mechanism 220, rotation substrate 200.So also can reach radiation response.
Generally speaking method of the present invention may be used on forming with the opening of polymer electrolyte dielectric material, particularly in the manufacturing process of metal double-insert structure.
The present invention as dielectric layer, can effectively reduce the parasitic capacitance of internal connection-wire structure with the polymer electrolyte dielectric material of low-k.
The present invention utilizes heat treatment, the main body of the polymer electrolyte dielectric material that evenly hardens earlier, and again with radiation modality, differential hardening polymer electrolyte dielectric layer, the surface that is exposed.
The irradiation source that the present invention adopts can comprise a single irradiation source, or a plurality of irradiation source.Irradiation source can a vertical mode be incident in substrate, or individually with an angle, is incident in substrate.
Substrate of the present invention when carrying out differential hardening, also can cooperate irradiation source, is rotated.
In sum; though the present invention discloses as above in conjunction with a preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; can make various changes and retouching, so protection scope of the present invention should be looked the accompanying Claim scope person of defining and is as the criterion.
Claims (20)
1. a formation is opened on the method in the polymer electrolyte dielectric layer, and this method comprises:
One substrate is provided;
Form a polymer electrolyte dielectric layer in this substrate;
Carry out a heat treatment, with this polymer electrolyte dielectric layer that hardens;
Define this polymer electrolyte dielectric layer, to form an opening, this opening exposes the part surface of this polymer electrolyte dielectric layer; And
Carry out a differential hardening manufacturing process, again this part surface of being exposed of this polymer electrolyte dielectric layer of underhardening.
2. formation as claimed in claim 1 is opened on the method in the polymer electrolyte dielectric layer, wherein should define the step of this polymer electrolyte dielectric layer, comprises forming a mask layer on this polymer electrolyte dielectric layer, and is defined with this polymer electrolyte dielectric layer.
3. formation as claimed in claim 1 is opened on the method in the polymer electrolyte dielectric layer, and wherein this opening comprises an interlayer hole, lead irrigation canals and ditches, and a pair of mosaic structure opening three selects one.
4. formation as claimed in claim 1 is opened on the method in the polymer electrolyte dielectric layer, and wherein this carries out a differential hardening manufacturing technology steps, comprises and utilizes an irradiation source, shines this part surface that this polymer electrolyte dielectric layer is exposed.
5. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and use therein this irradiation source comprises a light source, has enough energy with sclerosis polymer electrolyte dielectric material.
6. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and use therein this irradiation source comprises a ultraviolet light and the two one of laser.
7. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and use therein this irradiation source comprises an electron beam and the two one of an ion beam.
8. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and wherein this irradiation source comprises a single irradiation source and is incident in this substrate with the approximate vertical direction.
9. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and wherein this irradiation source comprises that a single irradiation source is incident in this substrate with an oblique angle, and this substrate is rotated.
10. formation as claimed in claim 4 is opened on the method in the polymer electrolyte dielectric layer, and wherein this irradiation source comprises that a plurality of irradiation sources are incident in this substrate with an incidence angle respectively.
11. formation as claimed in claim 10 is opened on the method in the polymer electrolyte dielectric layer, wherein those irradiation sources comprise two irradiation sources, respectively with this substrate of oblique angle incident.
12. formation as claimed in claim 1 is opened on the method in the polymer electrolyte dielectric layer, wherein this provides in the step of a substrate, and this substrate comprises the top of a conductive structure layer in this substrate.
13. the hatch frame in the polymer electrolyte dielectric layer, this hatch frame comprises:
One substrate;
One thermmohardening polymer electrolyte dielectric layer is covered in this substrate, and wherein this thermmohardening polymer electrolyte dielectric layer has an opening, exposes an open surfaces of this thermmohardening polymer electrolyte dielectric layer;
One mask layer is covered in this thermmohardening polymer electrolyte dielectric layer, the surface outside this opening; And
One differential hardening polymer electrolyte dielectric layer is in this open surfaces position of this thermmohardening polymer electrolyte dielectric layer that exposes.
14. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this hatch frame comprises an interlayer hole, lead irrigation canals and ditches, and a pair of mosaic structure opening three selects one.
15. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this differential hardening polymer electrolyte dielectric layer comprises a ultraviolet light photopolymerization polymer electrolyte dielectric layer.
16. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this differential hardening polymer electrolyte dielectric layer comprises a laser hardening polymer electrolyte dielectric layer.
17. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this differential hardening polymer electrolyte dielectric layer comprises a photo-hardening polymer electrolyte dielectric layer.
18. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this differential hardening polymer electrolyte dielectric layer comprises an electron-beam curing polymer electrolyte dielectric layer.
19. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this differential hardening polymer electrolyte dielectric layer comprises ion beam sclerosis polymer electrolyte dielectric layer.
20. the hatch frame in the polymer electrolyte dielectric layer as claimed in claim 13, wherein this substrate comprises the top of a conductive structure layer in this substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011211733A CN1170309C (en) | 2001-06-11 | 2001-06-11 | Process for generating window in ligh-molecular diectric layer and its structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011211733A CN1170309C (en) | 2001-06-11 | 2001-06-11 | Process for generating window in ligh-molecular diectric layer and its structure |
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| Publication Number | Publication Date |
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| CN1391266A true CN1391266A (en) | 2003-01-15 |
| CN1170309C CN1170309C (en) | 2004-10-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB011211733A Expired - Lifetime CN1170309C (en) | 2001-06-11 | 2001-06-11 | Process for generating window in ligh-molecular diectric layer and its structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154395A (en) * | 2016-03-02 | 2017-09-12 | 台湾积体电路制造股份有限公司 | Semiconductor structure and its manufacture method |
| US10727350B2 (en) | 2016-08-02 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer film device and method |
-
2001
- 2001-06-11 CN CNB011211733A patent/CN1170309C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154395A (en) * | 2016-03-02 | 2017-09-12 | 台湾积体电路制造股份有限公司 | Semiconductor structure and its manufacture method |
| US10269627B2 (en) | 2016-03-02 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
| US10840134B2 (en) | 2016-03-02 | 2020-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
| US11328952B2 (en) | 2016-03-02 | 2022-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
| US10727350B2 (en) | 2016-08-02 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer film device and method |
| US11374127B2 (en) | 2016-08-02 | 2022-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer film device and method |
| US11777035B2 (en) | 2016-08-02 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Multi-layer film device and method |
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| Publication number | Publication date |
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| CN1170309C (en) | 2004-10-06 |
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Granted publication date: 20041006 |