CN1389432A - Dielectrical for multilayer microwave ceramic capacitor and its prepn. - Google Patents

Dielectrical for multilayer microwave ceramic capacitor and its prepn. Download PDF

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Publication number
CN1389432A
CN1389432A CN 01118480 CN01118480A CN1389432A CN 1389432 A CN1389432 A CN 1389432A CN 01118480 CN01118480 CN 01118480 CN 01118480 A CN01118480 A CN 01118480A CN 1389432 A CN1389432 A CN 1389432A
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medium
ceramic capacitor
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mnco
raw material
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吴顺华
张志萍
赵玉双
王国庆
陈晓娟
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Tianjin University
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Tianjin University
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Abstract

The present invention relates to a medium of microwave multilayer ceramic capacitor and its preparation method. Its composition includes: 0.60-0.64 Bam Tin Om+2n+0.30-0.37 ZnO+0.03 Nb2O5+X(wt%)MnCO3+Y (wt%) SnO2, where m=1-2, n=4-9, x=0.08 and y=0.06. The average grain size of said raw material is 0.5-1.8 micron. Said invention adopts conventional process, its medium wafer is sintered at 1140-1250 deg.C and heat-insulated for 6 hr. Said capacitor medium features low medium loss, low sintering temp., containing no harmful component and cheap raw material.

Description

The medium of microwave laminated ceramic capacitor and manufacture method thereof
The invention relates to ceramic condenser, or rather, is medium and the manufacture method thereof about the microwave laminated ceramic capacitor.
United States Patent (USP) U.S.P discloses a kind of BaO-Sm No. 840280 2O 3-TiO 2-PbO system microwave ceramics can be used for making microwave filter, dielectric resonator, laminated ceramic capacitor and dielectric capacitor etc., and its prescription is X (Ba 1-a, Pb a) O-YSm 2O 3-ZTiO 2, wherein, 6mol%≤X≤20mol%, 6mol%≤Y≤20mol%, 60mol%≤Z≤75mol%, 0≤a≤0.2.The main drawback that this porcelain is used to make the microwave laminated ceramic capacitor is, sintering temperature is higher, is 1200～1450 ℃, and dielectric loss is also higher simultaneously, in addition, owing to contain Pb in the raw material, unfavorable to human body and environment protection, also owing to Sm 2O 3Cost an arm and a leg, cost is high.
The objective of the invention is to overcome deficiency of the prior art, a kind of low dielectric loss, lower sintering temperature are provided, do not contain the microwave multilayer ceramic capacitor medium that harmful composition and materials are cheap and can be complementary with the electrode slurry of Pd/Ag=30/70.
Purpose of the present invention can be achieved by following technical proposals.
The medium of microwave laminated ceramic capacitor of the present invention comprises following component: 0.60～0.64Ba mTi nO M+2n+ 0.30～0.37ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2, m=1 in the formula～2, n=4～9, x=0～0.08, v=0～0.06.Described component content is preferably: 0.62Ba mTi nO M+2n+ 0.35ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2, m=1 in the formula～2, n=4～9, x=0～0.08, y=0～0.06.
The method of the manufacturing of the medium of microwave laminated ceramic capacitor of the present invention is, by following component preparation: 0.60～0.64Ba mTi nO M+2n+ 0.30～0.37ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2, m=1 in the formula～2, n=4～9, x=0～0.08, y=0～0.06.Then routinely technology through ball milling, give burning, again ball milling, dry-pressing formed after, in 1140～1250 ℃ of sintering, make condenser dielectric.The mean particle size of described raw material is 0.8～1.8 μ m; Described sintering temperature is 1160 ℃ of insulations 6 hours.
Below in conjunction with embodiment the present invention is further described.
Example 1: according to 0.62Ba mTi nO M+2n+ 0.35ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2Prescription is got m=1, n=4, and x=0, y=0 prepares burden.Adopt analytical pure BaCO in the raw material 3, TiO 2, ZnO, adopt chemical pure MnCO 3, SnO 2, above-mentioned preparation raw material was added the deionized water ball milling 1.5 hours with the zirconium ball, 40 mesh sieves are crossed in oven dry back, give burning in 1100 ℃, are incubated 2 hours, make frit; Frit is 2 ball millings 4.5 hours again, then drying, fry wax, sieve after, under the 2-4Mpa condition, dry-pressing formed is diameter 18mm, and the disk of thickness 1mm was in 1160 ℃ of sintered heat insulatings 6 hours, furnace cooling is coated with silver-colored slurry, silver ink firing, solder taul again, makes the wafer capacitance device.
Example 2～example 7: its material component and m value, n value are all identical with example 1, and x value, y value are shown in the table 1, and other processing step is also identical with example 1.The performance perameter of the condenser dielectric of example 1～example 7 is shown in the table 1.
Example 8～example 12: its material component and m value, n value are all identical with example 1, x=0.1, y=0.03, BaTi 4O 9Content is respectively 0.6,0.61,0.62,0.63 and 0.64, and other processing step is also identical with example 1.The performance perameter of the condenser dielectric of example 8～example 12 is shown in the table 2.
Example 13～example 15: its material component and m value, n value, x value, y value are all identical with example 8～example 12, and ZnO content is respectively 0.34,0.35,0.36, and other processing step is also identical with example 1.The performance perameter of the condenser dielectric of example 13～example 15 is shown in the table 3.
Table 1
Sequence number ??X(wt％) ??Y(wt％) Sintering condition ????ε tgδ×10 -4 ??α c×10 -6/℃ ??ρ(Ω·cm)
????1 ????0 ????0 ?1250℃，2h ??35.5 ????145 ????-92.7 ???2.9×10 10
????2 ????0.1 ????0 ?1250℃，2h ?36.81 ????0.8 ????-6.8 ???1.1×10 13
????3 ????0.01 ????0.01 ?1150℃，5h ?35.49 ??????2 ????-24.6 ???5×10 11
????4 ????0.1 ????0.02 ?1150℃，5h ?36.04 ?????16 ????-21.3 ???3.1×10 11
????5 ????0.1 ????0.03 ?1160℃，6h ????38 ????0.4 ????+4 ???2×10 13
????6 ????0.1 ????0.05 ?1160℃，5h ??36.4 ????0.9 ????0 ???3×10 12
????7 ????0.1 ????0.06 ?1160℃，5h ??36.6 ????0.8 ????+22 ???1×10 12
Table 2
Sequence number ??BaTi 4O 9Content Sintering condition ????ε tgδ×10 -4 ??α c×10 -6/℃ ?ρ(Ω·cm)
???8 ????0.60 ?1160℃，6h ????35.0 ????4 ????+25 ??8×10 11
???9 ????0.61 ?1160℃，6h ????36.0 ????2.5 ????+13 ??5×10 12
??10 ????0.62 ?1160℃，6h ????36.5 ????1.0 ????0 ??7×10 12
??11 ????0.63 ?1160℃，6h ????37.0 ????4.0 ????-5 ??2×10 13
??12 ????0.64 ?1160℃，6h ????38.2 ????2.0 ????-10 ??1.5×10 13
Table 3
Sequence number ZnO content Sintering condition ????ε ?tgδ×10 -4 ??αc×10 -6/℃ ?ρ(Ω·cm)
??13 ????0.34 ?1160℃，6h ???38.1 ????6 ????-25 ??6×10 12
??14 ????0.35 ?1160℃，6h ????38 ????0.4 ????+4 ??2×10 13
??15 ????0.36 ?1160℃，6h ????37 ????7 ????-20 ??7×10 12
Can find out that by embodiment and table 1, table 2, table 3 this porcelain has low-loss, low cost, high insulation resistance, lower sintering temperature, and the temperature factor advantage that levels off to and do not contain hazardous substance.

Claims (6)

1. the medium of a microwave laminated ceramic capacitor is characterized in that, it comprises following component: 0.60～0.64BamTinOm+2n+0.30～0.37ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2, m=1 in the formula～2, n=4～9, x=0～0.08, y=0～0.06.
2. medium according to claim 1 is characterized in that, described component content is: 0.62BamTinOm+2n+0.35ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2
3. the manufacture method of the medium of a microwave laminated ceramic capacitor is characterized in that, prepares by following component: 0.60～0.64BamTinOm+2n+0.30～0.37ZnO+0.03Nb 2O 5+ X (wt%) MnCO 3+ Y (wt%) SnO 2, m=1 in the formula～2, n=4～9, x=0～0.08, y=0～0.06.Then routinely technology through ball milling, give burning, again ball milling, dry-pressing formed after, in 1140～1250 ℃ of sintering, make condenser dielectric.
4. method according to claim 3 is characterized in that, the mean particle size of described raw material is 0.8～1.8 μ m.
5. method according to claim 3 is characterized in that, described sintering temperature is 1160 ℃.
6. according to claim 3 or 5 described methods, it is characterized in that the soaking time of described sintering temperature is 6 hours.
CN 01118480 2001-06-01 2001-06-01 Dielectrical for multilayer microwave ceramic capacitor and its prepn. Pending CN1389432A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373505C (en) * 2006-05-08 2008-03-05 浙江大学 Mesomeric electric constant laminated microwave dielectric ceramic and producing method thereof
CN100378032C (en) * 2005-11-21 2008-04-02 天津大学 Barium phthalate base ceramic capacity medium and preparation process thereof
CN101381229B (en) * 2008-10-28 2011-07-06 昆明理工大学 Low-temperature co-fired zinc niobate base microwave dielectric ceramics and preparation method thereof
CN103360057A (en) * 2012-03-31 2013-10-23 深圳光启创新技术有限公司 Dielectric ceramic
CN103864415A (en) * 2014-01-29 2014-06-18 河南科技大学 Zinc Stannate-doped barium titanate high-dielectric ceramic and preparation method thereof
CN104496465A (en) * 2014-12-02 2015-04-08 佛山铭乾科技有限公司 Microwave dielectric ceramic material and preparation method thereof
CN106220166A (en) * 2016-07-12 2016-12-14 广东国华新材料科技股份有限公司 A kind of microwave-medium ceramics and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100378032C (en) * 2005-11-21 2008-04-02 天津大学 Barium phthalate base ceramic capacity medium and preparation process thereof
CN100373505C (en) * 2006-05-08 2008-03-05 浙江大学 Mesomeric electric constant laminated microwave dielectric ceramic and producing method thereof
CN101381229B (en) * 2008-10-28 2011-07-06 昆明理工大学 Low-temperature co-fired zinc niobate base microwave dielectric ceramics and preparation method thereof
CN103360057A (en) * 2012-03-31 2013-10-23 深圳光启创新技术有限公司 Dielectric ceramic
CN103360057B (en) * 2012-03-31 2016-08-03 深圳光启创新技术有限公司 A kind of media ceramic
CN103864415A (en) * 2014-01-29 2014-06-18 河南科技大学 Zinc Stannate-doped barium titanate high-dielectric ceramic and preparation method thereof
CN103864415B (en) * 2014-01-29 2016-03-30 河南科技大学 Barium titanate high dielectric ceramic of a kind of zinc doping and preparation method thereof
CN104496465A (en) * 2014-12-02 2015-04-08 佛山铭乾科技有限公司 Microwave dielectric ceramic material and preparation method thereof
CN106220166A (en) * 2016-07-12 2016-12-14 广东国华新材料科技股份有限公司 A kind of microwave-medium ceramics and preparation method thereof
CN106220166B (en) * 2016-07-12 2018-04-03 广东国华新材料科技股份有限公司 A kind of microwave-medium ceramics and preparation method thereof

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