CN1388594A - Light-emitting semiconductor device containing fluorophor and its application - Google Patents
Light-emitting semiconductor device containing fluorophor and its application Download PDFInfo
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- CN1388594A CN1388594A CN01114753A CN01114753A CN1388594A CN 1388594 A CN1388594 A CN 1388594A CN 01114753 A CN01114753 A CN 01114753A CN 01114753 A CN01114753 A CN 01114753A CN 1388594 A CN1388594 A CN 1388594A
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract
The light-emitting seimconductor device contains light-emitting semiconductor and at least one kind of fluorophor as light-converting element. The light-emitting semiconductor emits blue light and the light-converting element converts the blue light into other color light, thus to form mixed color light of the two color lights. The present invention can increase the color selecting range of light emitting device and raise the brightness, stability and life.
Description
The present invention relates to the light-emitting diode that led chip combined with fluorescent body produces white light and other color of light, relate in particular to the LED that sends the light of different wave length section by single led wafer in conjunction with different luminescent conversion elements.
Light-emitting diode because the light that can send out color multiple and bright-colored, volume is little, luminous efficiency is high and be subjected to people's extensive attention.Especially luminous intensity height, effective, the light-emitting diode that can send ruddiness, green glow, blue light etc.Simultaneously, the light-emitting diode that can emit white light also gets more and more people's extensive concerning.White light is only lighting source, because white light has comprised all primary colors.White light is suitable for various demonstrations, also is suitable for needing of display unit, backlight, car and boat, aircraft, luminescence indicating, indicator light and life illumination certainly.Few, the life-span length of institute's consuming electric power, light weight, advantage that price is low are especially having original advantage aspect ON/OFF is lighted repeatedly in addition, aspect the production in future, the life purposes are more widely being arranged.
LED is by the current boost electron energy and to abandon electronics on the band gap between valence band and the conduction band (forbidden band) luminous as everybody knows.The electronic transition energy volume production third contact of a total solar or lunar eclipse.Band gap equals the photon energy as light quantum.The band gap of active layer provides radiative wavelength.Wavelength has determined the color of light.The color of light depends on the material of LED active layer.
All conventional LED utilize the band-gap transition of electronics to produce light.All band-gap transition LED send monochromatic light (monochromatic LED).Now produced and sold and send red, yellow, green or blue monochromatic LED.For example, now sold the high light-emitting diode of ruddiness that can produce greater than the strong energy of several candelas (Cd).Red-light LED is based on gallium aluminium arsenic (AlGaAs) or gallium arsenic phosphide (GaAsP) active layer.Cheap red-light LED is widely used.Now also produced and sold the green/green-yellow light LED of (GaP) luminescent layer (active layer) that has gallium phosphide.The blue-ray LED of carborundum SiC layer as active layer now proposed.Existing indigo plant/green light LED on market based on gallium indium nitrogen (GaInN) active layer.LED with AlGaAsP active layer is orange/yellow led.Now produced monochromatic LED with following color and active layer combination.
The color active layer material
(1) red LED... AlGaAs, GaAsP
(2) green-yellowish green LED... GaP
(3) blue LED... SiC
(4) indigo plant-green LED... GaInN
(5) orange LED... AlGaInP
These maturation be cheap practical LED.Among these LED, GaP LED and SiC LED also do not obtain the higher-energy emission greater than 1 candela, are because GaP and SiC are the indirect transition N-type semiconductor N.What determine wavelength is active layer material.Selection has the band gap that needs and satisfies crystal as lattice match condition etc. as active layer.
Because the photo emissions that LED has utilized the electronic band gap transition to cause is so all conventional LED can send monochromatic light.Thus, Chang Gui LED is a monochromatic source.Monochromatic LED has been widely used as display light source.Yet monochromatic LED can not replace all present light sources.Because monochromatic light only comprises the light of single wavelength, so monochromatic light can not be used for daylighting (illumination), specific demonstration or LCD back light.If monochromatic LED is used as light source, illuminated object will all have the color that monochromatic LED sends, rather than the intrinsic color of object.If monochromatic LED is used as the LCD back light, LCD will demonstrate monochromatic image so.
Daylighting or illumination need the inherent white light source that comprises all primary colors.Yet, up to the present also do not have to send the semiconductor LED of white light.Illumination light is generally still provided by incandescence bulb or fluorescent lamp.Though very cheap, the incandescence bulb has the short and low shortcoming of luminous efficiency of life-span.Fluorescent lamp has low shortcoming of life-span equally, yet than the luminous efficiency height of incandescence bulb.In addition, fluorescent lamp needs as heavier annexes such as pressurizers.Fluorescent lamp also has the big and big shortcoming of weight of size.
Can make White LED by display predetermined colors in combination LED, green LED and blue led.Red LED and green LED are extensively made and are on sale in market.Owing to be difficult to make good crystalline, therefore than red LED or the more difficult manufacturing blue led of green LED with broad-band gap.Recently, invented out blue led based on GaInN active layer and Sapphire Substrate.Blue led has been made and supply the market at present.Three primary colors (red, green and blue) LED can buy.Can make White LED by display predetermined colors in combination LED, green LED and blue led.Yet the LED of three elements has increased the cost that mixes LED.Three LED can the single led big three times electric energy of consumption rate.The LED of three elements needs complicated electric energy balance, is suitable for throwing light on or the white of daylighting with manufacturing.The needs of modulation electric energy balance make drive circuit complicated.The assembly of LED element has increased size of devices.Three-element white light LEDs is more insuperior than at present popular incandescent lamp or fluorescent lamp.Replace one group of three LED need consider to shift luminescent method.
There is phosphor degradation in the use in the light-emitting diode that existing correlation technique is disclosed and the drawback of tone variation, efficient reduction in various degree.In order to overcome relevant problem, the present invention improves in the fluorophor application facet, therefore, the objective of the invention is to improve composition, proportioning and the structure of the fluorophor of luminous inverting element, thereby the color selectivity of light-emitting diode is enlarged, and brightness improves, and stability strengthens.
Purpose of the present invention can reach by the following technical solutions:
Manufacture and design a kind of luminous semiconductor device that contains fluorophor, have an emitting semiconductor main body and lead-in wire, lead-in wire is made conduction with semiconductor body and is connected, also has a luminous inverting element that contains a kind of fluorescer at least, especially semiconductor body contains a semiconductor multilayer structure, the light of emission blue light spectral coverage forms first wavelength period when semiconductor is worked, luminous inverting element will be transformed into the second wavelength period light different with the first wavelength period light from the light of first wavelength period emission, thereby the light that this luminous semiconductor device is launched by first wavelength period and second wavelength period mixes the light that forms.
Manufacture and design a kind of luminous semiconductor device that contains fluorophor, and apply it to the external illumination of vehicles such as automobile and the inherence illumination of instrument and meter.
Brief Description Of Drawings:
Fig. 1: contain the light-emitting diode profile of fluorophor, wherein
A figure: the light-emitting diode of single electrode wafer.
B figure: the light-emitting diode of bipolar electrode wafer.
Fig. 2: white color light emitting diode luminescent spectrum schematic diagram.The luminous intensity data that different spectrum are described obtains
Get different with processing procedure.
Fig. 3: aubergine light-emitting diode luminescent spectrum schematic diagram.The luminous intensity data of different spectrum is described
Obtain different with processing procedure.
Fig. 4: green light lumination of light emitting diode spectrum schematic diagram.The luminous intensity data that different spectrum are described obtains
Get different with processing procedure.
Fig. 5: the wafer of different wave length cooperates with different fluorophor makes the signal of white color light emitting diode chromaticity coordinates
Figure.
Fig. 6: the distribution of the fluorophor of different proportionings on the CIE administrative division map.Illustrate by adjusting fluorescent material
Kind, content can make the light-emittingdiode chromaticity coordinates on the CIE administrative division map in a big way in divide
Cloth.
Below in conjunction with accompanying drawing in detail embodiments of the invention are described in detail.
A kind of luminous semiconductor device that contains fluorophor, have an emitting semiconductor main body and lead-in wire, lead-in wire is made conduction with semiconductor body and is connected, also has a luminous inverting element that contains a kind of fluorescer at least, especially semiconductor body contains a nitride semiconductor multilayer structure, also can contain one or more layers semiconductor structure of ZnSe.The light of emission blue light spectral coverage forms first wavelength period when semiconductor is worked, luminous inverting element will be transformed into multiple the have nothing in common with each other second wavelength period light different with the first wavelength period light from the light of first wavelength period emission, thereby the light that this luminous semiconductor device is launched by first wavelength period and second wavelength period mixes the light that forms.
On semiconductor body, has one or more layers luminous transform layer as luminous inverting element.
Luminous inverting element contains the fluorophor that at least a element among at least a element from yttrium Y, lanthanum La, scandium Sc, lutetium Ln, gadolinium Gd, samarium Sm, barium Ba, element and aluminium Al, gallium Ga, the indium In is formed.
Luminous inverting element contains from Y, La, Sc, Ln, Gd, Sm, in the Ba element at least a element with or Al, Ga, the fluorophor that at least a element among the In is formed.
Contain (Y in the luminous transform layer of luminous inverting element
1-p-g-r, Gd
pCe
gSm
r) 3 (Al
1-sGa
s) 5 O
120≤p≤0.8 0≤g≤0.2 0≤r≤0.08 0≤s≤1 fluorescence (white).
Also can contain with europium Eu in the luminous transform layer of luminous inverting element is the sulfuration fluorophor (pink) that excites active centre.
Can also contain in the luminous transform layer of luminous inverting element based on the dark red colour system fluorophor of yttrium aluminium YAG, be the fluorophor (green) that excites active centre with Tb.
The main peak value of the luminescent spectrum of described light-emitting component can be set in 390nm to the 550nm scope, the main peakedness ratio light-emitting component of the luminescent spectrum of luminous inverting element luminous main peak value long, make it can send the light of the multiple color that comprises white light.
A kind of luminous semiconductor device that contains fluorophor is especially in the external illumination of vehicles such as automobile and the interior application in illumination of instrument and meter.This application can make various illumination adjustabilitys better, and lamp life prolongs greatly.
More than use the application that also is included in identification light, indicator light and LCD backlight plate aspect.
In the example, by the GaN type blue-ray LED that will have the GaInN active layer bury the jaundice fluorescence the YAG groove in make YAG-GaN LED.YAG is the abbreviation of the dark red colour system fluorophor of yttrium-aluminium-garnet.Fig. 1 (a) shows the light-emitting diode of single electrode wafer, and Fig. 1 (b) shows the LED light-emitting diode of bipolar electrode wafer.Hemisphere transparent plastic mould 1 has been fixed the support 4 of two-tube pin.The last side arm of a band small rut is arranged at the first pin top of band clubfoot.GaN type blue-light LED chip 3 with GaInN active layer is arranged on the bottom of pit.LED has negative electrode and anode at the top.Electrode is connected to first and second bases by wire 51,52.Pit is filled by the YAG fluorophor 2 of yellow, fully covers GaN type LED.After the sclerosis YAG resin, form transparent plastic 1.
Conventional photodiode (PD) and light-emitting diode (LED) are used as conductive substrates.Described conductive substrates can be mainly negative electrode in the electrode.Conventional PD or LED only have an electrode (being mainly anode) that is connected to base by the single metal silk on its top.Yet present GaN type blue-ray LED uses the sapphire Al of insulation
2O
3Crystal is as substrate, and reason is to be difficult to well-grown GaN monocrystalline.The GaN layer growth is on Sapphire Substrate, and the GaInN active layer is layered on the GaN layer among the GaN type LED.The Sapphire Substrate of insulation can not be as negative electrode.Negative electrode and anode are formed on the top of chip abreast.Two top electrodes need two wires to be connected with base.When electric current when anode flows to negative electrode, GaN type LED blue light-emitting.The part blue light passes the YAG fluorophor and arrives space outerpace.Remaining blue light is absorbed by the YAG fluorophor, and is converted into the gold-tinted longer than parent blue light wavelength.The gold-tinted of YAG emission conversion.LED launches blue.Gold-tinted and blue light send from plastics mould 1 together.Yellow and indigo plant is synthesized naturally.When the energy ratio of the energy of blue light and gold-tinted was in suitable scope, secondary colour was a white.The YAG-GaN purpose be to make the blue light of GaN-LED with mixes by blue-light excited yellow fluorescence stack from the YAG groove produce white.
Fig. 2 shows the emission spectrum of YAG-GaN LED.Abscissa is wavelength (nm).Ordinate is emissive porwer (unit arbitrarily).The kurtosis of 460nm is initially produced by GaN type LED.460nm equals the band gap of GaInN.The broad peak value of 550nm is produced by fluorophor YAG groove.Human eye can not be distinguished the component (460nm and 550nm) of light.Synthetic light appears as white.
Foregoing GaInN type active layer and ZnSe type active layer are known blue-light source.SUMITOMO CHEMICAL company applied for the ZnSe LED of a kind of white or muted color in 1999, and its invention is to utilize the ZnSe substrate as fluorescent material in the ZnSe substrate.ZnSe type active layer sends the blue light of shorter wavelength.The fluorescence substrate produces the yellow or orange light of longer wavelength.By will be from the blue light of ZnSe type active layer and the light that forms white or muted color from the yellow or orange light compositing of ZnSe substrate.
When ZnSe was doped with iodine (I), aluminium (Al), chlorine (Cl), bromine (Br), gallium (Ga) or indium (In), ZnSe was converted to the n N-type semiconductor N.N type electricity is led the resistivity that has reduced the ZnSe substrate.Simultaneously, foreign atom forms launching centre in the ZnSe substrate.Launching centre absorbs short-wavelength light, and light is converted to longer wavelength light, and the emission longer wavelength light.When absorption is shorter than the wavelength light of 510nm, the self-activate luminescence of impurity center emission wavelength ranges wide spectrum from 550nm to 650nm (SA emission).Described emission is called the self-activation emission.Launching centre is called the SA center.Can control the medium wavelength and the full width at half maximum value (FWHM) of SA emission spectrum by the concentration of selecting impurity (I, Al, Cl, Br, Ga and In) and impurity.The SA emission spectrum be distributed in widely red and yellow between.
Because this ZnSe wafer itself can send the light of white or muted color, on the LED that making emits white light, provides a kind of comparatively convenient simple manufacture method.But its shortcoming is that its color rendering is lower, has only 68%, can't reach the basic demand of illumination.The present invention adds one or more layers fluorophor on the ZnSe wafer to, improves luminous color rendering, to satisfy emitting led application in illumination.
More than explanation, the light-emittingdiode that contains fluorophor of the present invention can reach high-level luminous requirement, satisfies the needs of industry and people's daily life, and is more widely used in practice.
A kind of light-emitting diode relevant with the present invention uses to possess has the semi-conductive element of gallium nitride series to be used as light-emitting component, this gallium nitride series semiconductor has high band gap, and use and to contain the different different luminescence generated by light fluorophor more than two kinds of mutual composition, preferably be used as the luminescence generated by light fluorophor with the yttrium of cerium activation, the fluorophor of aluminium series.Thus, even this light-emitting diode is not according to making will being worth of chromatic dispersion gained, can making the light-emitting diode of wanting tone to some extent by means of the fluorophor content of adjusting more than two kinds yet at the emission wavelength by LED that light-emitting component is sent out.In this case,, use the short fluorophor of emission wavelength,, can make the luminous constant of light-emitting diode by means of using the long fluorophor of emission wavelength to cooperate the long light-emitting component of emission wavelength with respect to the short light-emitting component of emission wavelength.
With regard to regard to fluorophor, can use general expression with (Re
I-rSm
r) 3 (Al
I-sGa
5) 5 O
12: Ce is (wherein, 0≤r ∠ 1,0≤s ∠ 1, and the Re side is from selected at least a of Y, Gd and La), because in the visible light belt of light-emitting component, even do the irradiation of high brightness for a long time and under all external environment conditions, use the also few flavescence of fluorophor for having high-octane light, so the situation of illuminant colour color spot and luminosity reduction seldom takes place the light-emitting diode that is constituted, and has the luminous composition of the high brightness of wanting.
Now describe the luminescence generated by light fluorophor that this light-emitting diode uses in detail.
As mentioned above, the luminescence generated by light fluorophor also constitute in an identical manner, and the using method of fluorophor is also identical except that using the luminescence generated by light fluorophor of forming the different cerium activation more than two kinds.
Owing to can do all variations (leave situation according to self-emission device and add concentration gradient) to the distribution of luminescence generated by light fluorophor, so utilize to make light-emittingdiode have the extremely strong characteristic of weather resisteant, this distribution utilization by adjustment contain the member, formation temperature of luminescence generated by light fluorophor, sticking shape, the particle size distribution that becomes with the luminescence generated by light fluorophor waits and does all adjustment.In addition, corresponding to service condition, set the distributed density of fluorophor.And can improve luminous efficiency by means of the configuration of the light that each light-emitting component sent being carried out fluorophor more than two kinds (for example in regular turn from being disposed) near light-emitting component.
As the light-emitting diode of above structure, though constitute a kind of with illumination intensity be (Ee)=3W*cm
-2Above 10W*cm
-2Following high output light emitting element connects or closely connects under the configuration scenario, also has the sufficient light-emitting diode of high efficiency and light resistance.
In order to the dark red colour system fluorophor of yttrium, the aluminium of cerium activation (YAG is a fluorophor), owing to have a wine-colored structure, so extremely strong on hot, light and the moisture content.And the dark red colour system fluorophor of yttrium one aluminium is set in the peak value of exiting spectrum near the 450nm, and the peak value of luminescent spectrum is set near the 510nm, so can on frequency range luminescent spectrum be extended to 700nm.Can send green-series light thus.Can be shown in the dotted line of Fig. 5 a, another of example 2 is with the dark red colour system fluorophor of yttrium, the aluminium of cerium activation, the peak value that makes exiting spectrum is near 450nm, and the peak value of luminescent spectrum can be set in shown in the dotted line of Fig. 5 b near the 600nm, can on frequency range, luminescent spectrum be extended to 750nm thus, thus red colour system light can take place.
At the YAG with peony composition is in the fluorophor, and a part of replacing Al with Ga makes emission wavelength toward the shortwave side shifting, and makes emission wavelength toward the long wave side shifting with the part of Gd and La displacement Y.Al considers preferably that towards the Ga displacement luminous efficiency and emission wavelength are Ga: Al=1: 1 to 4: 60.Similarly, replace a part of Y of Y with Gd and La: Ga and La=9: 1, to 1: 9, the preferably was Y: Ga and La=4: 1 to 2: 3, the displacement ratio was discontented with 2, and green composition can increase red composition then to be dwindled.And ratio is more than 6, and red composition can increase brightness and then sharply reduce.
This luminescence generated by light fluorophor can use the compound that oxide was made up as easy oxidation under the oxide of raw material and the high temperature with Y, Gd, Ce, La, Al, Sm and G, and by stoichiometric proportion its mixing is made raw material.And mix with gallium oxide with coprecipitated oxide, aluminium oxide and make mixed material, described coprecipitated oxide is that the coprecipitated thing with oxalic acid co-precipitation one lysate cures, and described lysate is according to stoichiometric proportion Y, Gd, Le, La, Sm to be wished the great soil group element to be dissolved in the acid, to put into crucible as an amount of mixing of the fluorides such as ammonium fluoride of flux, 1350-1450 ℃ was cured and makes the product of curing in temperatures 2-5 hour in air, secondly ball milling cures product, clean, separation, drying in water, can make by sieve at last.In this example, form different both preferably the mixing with the dark red colour system fluorophor of yttrium, the aluminium of cerium activation more than two kinds and use, and preferably separate configurations (such as lamination) is used.Mix under the operating position at fluorophor more than two kinds, it is simpler to form the good look transformation component of output, and more than two kinds under the fluorophor separate configurations situation, can put in order and give tone after formation by means of forming institute's color of wanting or making its mixing.In addition, at fluorophor separately under the separate configurations situation, preferably be provided with and be easy in upper wavelength side absorbing light and luminous fluorophor near LED element place, and at the fluorophor that is easy to from LED configuration at a distance than long wave side draught transmitting-receiving light.Can effectively absorb also luminous thus.
As mentioned above, light-emitting diode uses and forms different yttrium, the dark red colour system fluorophor of aluminium more than two kinds.Can constitute thus a kind of desire illuminant colour can effectively luminous light-emitting diode.Promptly, the emission wavelength of semiconductor light-emitting elements issued light becomes under the situation of figure at look shown in Figure 6, can send and form the different dark red colour system fluorophor of the yttrium more than two kinds, aluminium colourity, it is the arbitrary illuminant colour among Fig. 6, can be by means of the LED element, by means of the chromatic dispersion that comes the emission wavelength of compensation LED element by selection, can constitute the few light-emitting diode of chromatic dispersion of emission wavelength thus to the fluorophor proportioning.In addition, can be by means of the light-emitting diode that constitutes the luminous composition of RGB that contains high brightness by the emission wavelength of selecting fluorophor.
The present invention is with respect to the advantage of prior art, by improving luminous conversion semiconductor devices and cooperation The composition of fluorophor, proportioning and structure, thus the color preference of light emitting diode is enlarged, brightness improves, Stability and life-span also all are improved, need not three semiconductor can send the light of white light or other color.
Claims (23)
1. a luminous semiconductor device that contains fluorophor has an emitting semiconductor main body and lead-in wire, and lead-in wire is made conduction with semiconductor body and is connected, and also has a luminous inverting element that contains a kind of fluorescer at least, it is characterized in that:
Semiconductor body contains a semiconductor multilayer structure, the light of emission blue light spectral coverage forms first wavelength period when semiconductor is worked, luminous inverting element will be transformed into the second wavelength period light different with the first wavelength period light from the light of first wavelength period emission, thereby the light that this luminous semiconductor device is launched by first wavelength period and second wavelength period mixes the light that forms.
2. luminous semiconductor device as claimed in claim 1 is characterized in that:
Semiconductor body contains a nitride semiconductor multilayer structure, the light of emission blue light spectral coverage forms first wavelength period when semiconductor is worked, luminous inverting element will be transformed into the second wavelength period light different with the first wavelength period light from the light of first wavelength period emission, thereby the light that this luminous semiconductor device is launched by first wavelength period and second wavelength period mixes the light that forms.
3. as the described luminous semiconductor device of claim 1 to 2, it is characterized in that:
Luminous inverting element is transformed into the light of second wavelength period that is formed by the multiple spectrum segment that has nothing in common with each other with the light of first wavelength period, thereby makes this semiconductor light-emitting apparatus launch the light that the light by the light of first wave band and second wavelength period mixes mutually.
4. luminous semiconductor device as claimed in claim 3 is characterized in that:
On semiconductor body, has one or more layers luminous transform layer as luminous inverting element.
5. luminous semiconductor device as claimed in claim 4 is characterized in that:
Luminous inverting element contains the fluorophor that at least a element among at least a element from yttrium Y, lanthanum La, scandium Sc, lutetium Ln, gadolinium Gd, samarium Sm, barium Ba, element and aluminium Al, gallium Ga, the indium In is formed.
6. luminous semiconductor device as claimed in claim 5 is characterized in that:
Contain (Y in the luminous transform layer of luminous inverting element
1-p-g-r, Gd
pCe
gSm
r) 3 (Al
1-sGa
s) 5 O
120≤p≤0.8 0≤g≤0.2 0≤r≤0.08 0≤s≤1 fluorescence (white).
7. luminous semiconductor device as claimed in claim 5 is characterized in that:
Containing with europium Eu in the luminous transform layer of luminous inverting element is the sulfuration fluorophor (pink) that excites active centre.
8. luminous semiconductor device as claimed in claim 5 is characterized in that:
Containing in the luminous transform layer of luminous inverting element based on the dark red colour system fluorophor of yttrium aluminium YAG, is the fluorophor (green) that excites active centre with Tb.
9. as the described luminous semiconductor device of claim 5 to 8, it is characterized in that:
Change the proportion compatibility of fluorophor in the luminous transform layer of luminous inverting element, the main peak value of the light after the conversion is changed.
10. as the described luminous semiconductor device of claim 5 to 9, it is characterized in that:
Change the concentration of fluorophor in the luminous transform layer, the main peak value of the light after the conversion is changed.
11. luminous semiconductor device as claimed in claim 1 is characterized in that:
Semiconductor body contains a zinc selenide ZnSe semiconductor multilayer structure, the light of emission blue light spectral coverage forms first wavelength period when semiconductor is worked, luminous inverting element will be transformed into the second wavelength period light different with the first wavelength period light from the light of first wavelength period emission, thereby the light that this luminous semiconductor device is launched by first wavelength period and second wavelength period mixes the light that forms.
12. luminous semiconductor device as claimed in claim 11 is characterized in that:
Luminous inverting element is transformed into the light of second wavelength period that is formed by the multiple spectrum segment that has nothing in common with each other with the light of first wavelength period, thereby makes this emitting semiconductor light-emitting device launch the light that the light by the light of first wave band and second wavelength mixes mutually.
13. luminous semiconductor device as claimed in claim 12 is characterized in that:
On semiconductor body, has one or more layers luminous transform layer as luminous inverting element.
14. luminous semiconductor device as claimed in claim 13 is characterized in that:
Luminous inverting element contains from Y, La, Sc, Ln, Gd, Sm, in the Ba element at least a element with or Al, Ga, the fluorophor that at least a element among the In is formed.
15. luminous semiconductor device as claimed in claim 14 is characterized in that:
Contain (Y in the luminous transform layer of luminous inverting element
1-p-g-r, Gd
pCe
gSm
r) 3 (Al
1-sGa
s) 5 O
120≤p≤0.8 0≤g≤0.2 0≤r≤0.08 0≤s≤1 fluorescence (white).
16. luminous semiconductor device as claimed in claim 14 is characterized in that:
Containing with europium Eu in the luminous transform layer of luminous inverting element is the sulfuration fluorophor (pink) that excites active centre.
17. luminous semiconductor device as claimed in claim 14 is characterized in that:
Containing in the luminous transform layer of luminous inverting element based on the dark red colour system fluorophor of yttrium aluminium YAG, is the fluorophor (green) that excites active centre with terbium Tb.
18., it is characterized in that as the described luminous semiconductor device of claim 14 to 17:
Change the proportion compatibility of fluorophor in the luminous transform layer of luminous inverting element, the main peak value of the light after the conversion is changed.
19., it is characterized in that as the described luminous semiconductor device of claim 14 to 18:
Change the concentration of fluorophor in the luminous transform layer, make transform back light the main peak value change.
20. luminous semiconductor device as claimed in claim 19 is characterized in that:
The main peak value of the luminescent spectrum of described light-emitting component is set in 390nm to the 550nm scope, and is luminous
The main peak value of the luminescent spectrum of described light-emitting component is set in 390nm to the 550nm scope, the main peakedness ratio light-emitting component of the luminescent spectrum of luminous inverting element luminous main peak value long, make it can send the light of the multiple color that comprises white light.
21., it is characterized in that as the described luminous semiconductor device of claim 1 to 20:
In the external illumination of vehicles such as automobile and instrument and meter etc. in the application of illumination.
22., it is characterized in that as the described luminous semiconductor device of claim 1 to 20:
Application aspect identification light, indicator light.
23., it is characterized in that as the described luminous semiconductor device of claim 1 to 20:
Application aspect the LCD backlight plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01114753A CN1388594A (en) | 2001-05-27 | 2001-05-27 | Light-emitting semiconductor device containing fluorophor and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01114753A CN1388594A (en) | 2001-05-27 | 2001-05-27 | Light-emitting semiconductor device containing fluorophor and its application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1388594A true CN1388594A (en) | 2003-01-01 |
Family
ID=4661374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01114753A Pending CN1388594A (en) | 2001-05-27 | 2001-05-27 | Light-emitting semiconductor device containing fluorophor and its application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1388594A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100400961C (en) * | 2003-09-05 | 2008-07-09 | 日亚化学工业株式会社 | Lighting device and lighting fixture for a vehicle |
| CN102155673A (en) * | 2010-12-14 | 2011-08-17 | 山西乐百利特科技有限责任公司 | LED (Light Emitting Diode) backlight source |
| CN105650561A (en) * | 2014-09-26 | 2016-06-08 | 现代自动车株式会社 | Laser optical system for head lamp |
-
2001
- 2001-05-27 CN CN01114753A patent/CN1388594A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100400961C (en) * | 2003-09-05 | 2008-07-09 | 日亚化学工业株式会社 | Lighting device and lighting fixture for a vehicle |
| CN102155673A (en) * | 2010-12-14 | 2011-08-17 | 山西乐百利特科技有限责任公司 | LED (Light Emitting Diode) backlight source |
| CN105650561A (en) * | 2014-09-26 | 2016-06-08 | 现代自动车株式会社 | Laser optical system for head lamp |
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