CN1378239A - Optical mask structure and microphotograph process - Google Patents
Optical mask structure and microphotograph process Download PDFInfo
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- CN1378239A CN1378239A CN 01109734 CN01109734A CN1378239A CN 1378239 A CN1378239 A CN 1378239A CN 01109734 CN01109734 CN 01109734 CN 01109734 A CN01109734 A CN 01109734A CN 1378239 A CN1378239 A CN 1378239A
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- light shield
- light
- pattern
- group structure
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Abstract
The optical mask structure and microphotograph process is suitable for forming preset exposure pattern in photoresist layer. The optical mask structure includes several masks with different pattern; and during the microphotograph process, each of the masks is used in exposing the photoresist layer successively to form the preset pattern in the photoresist layer.
Description
The invention relates to a kind of semiconductor employed equipment of industry and processing procedure, particularly about a kind of light shield group (Photo Mask Set) structure and little shadow (Lithography) processing procedure that uses this light shield group structure.
Along with the yardstick of semiconductor subassembly day by day dwindles, the resolution of exposure manufacture process also must continue to improve.According to Rayleigh ' s theory, the resolution of exposing patterns (Resolution) can be expressed as follows during exposure:
R (resolution)=K
1* λ/NA (1) wherein λ is the wavelength of exposure light source, and NA is the numerical aperture (NumericalAperture) of exposure optical instrument, and K
1Be the parameter relevant with processing procedure, its value is according to material, the thickness of photoresist layer, or the mode of exposure and deciding.By formula (1) as seen, for improving the resolution of pattern, except using the short exposure light source of wavelength, also can be by reducing K
1Value reaches.
Yet, work as K
1Value was less than 0.4 o'clock, if the graphic design spacing/width (Pitch/Size) that is formed in the photoresist layer is too small, or figure spacing/width difference is excessive, and then optimum exposure condition is difficult for finding, and its reason is explained as follows.When figure spacing/width is too small,, make that the interference that appears light wave is comparatively serious, so exposing patterns usually produces distortion because exposed portion is too close.In addition, figure spacing/the width of the pattern that forms when desire is not for the moment, because the conditions of exposure when using single light shield can not satisfy the demand of the figure of each spacing/width in this pattern, so the exposing patterns that forms is easy to generate distortion, or making that the transfer of Micropicture (Features) is accurate inadequately in the light shield, this promptly represents the reduction of micro-photographing process nargin (Lithography Process Window).
Therefore, the objective of the invention is to propose a kind of light shield group structure and micro-photographing process, to solve the problem of the micro-photographing process nargin reduction that is met with in the above-mentioned known skill.
Light shield group structure proposed by the invention comprises several light shields of each tool different pattern, and with each light shield photoresist layer is carried out single exposure respectively when micro-photographing process, and is forming predetermined pattern behind the multiexposure, multiple exposure among photoresist layer.Wherein, the figure spacing/width of each light shield itself is greater than the figure spacing/width of predetermined pattern, or the figure spacing/width of each light shield itself is roughly the same, but the figure of predetermined pattern spacing/width difference.In addition, in light shield group structure proposed by the invention, the graphic feature of each light shield can be wire, island (Island) or contact window (Contact Hole) shape or the like.
As mentioned above, because in light shield group structure and micro-photographing process proposed by the invention, be to carry out multiexposure, multiple exposure with several light shields to form predetermined exposing patterns, and the figure of the light shield of each decomposition spacing/width increases, or figure spacing/width is roughly the same, so the micro-photographing process nargin of each exposure all can promote.Therefore, generally, the micro-photographing process nargin of the exposing patterns of last gained also can increase.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperation institute accompanying drawing elaborate:
The drawing explanation:
Figure 1A-1C is in the preferred embodiment of the present invention, after using two bigger and identical light shields of figure spacing/width own that photoresist layer is exposed continuously, obtain the situation of the less and inconsistent pattern of figure spacing/width, wherein Figure 1A is the profile of two light shields.
Fig. 2 A-2B is in the preferred embodiment of the present invention, and the identical optical nearing correction light shield of two figure spacing/width is with the situation of boost line (Assistant Bar) as the pattern correction.The top of Fig. 2 A and Fig. 2 B is a profile, and the below is a front view.In addition, Fig. 2 C is the schematic diagram of hornblock (Serifs) optical nearing correction.
Fig. 3 A is in the preferred embodiment of the present invention, the profile of attenuating phase-shift formula light shield (on) and front view (descending).Fig. 3 B for the profile of ring phase-shift type light shield (on) with front view (descending).A light shield is an example one of in the light shield group of only being formed with two light shields among Fig. 3 A and Fig. 3 B.
Description of reference numerals:
104 photoresist layers
115,125 light shields
110,120,130,140,150,160 light transmission parts
114,124,134,144,154,164 exposure figures
188 light sources
215,225 light shields
210,220,230,240,250,260 main light transmission parts
214,224,234,244,254,264 boost lines
285 hornblocks
315,355 light shields
310,350 light transmission parts
320,370 semi-transparent phase shift layers
360 lightproof parts
a
1, b
1, a
2, b
2, d
1, d
2Spacing/width (light mask image)
a
1', b
1', a
2', b
2', d
1', d
2' spacing/width (exposure figure)
For the purpose of clearly demonstrating, in preferred embodiment of the present invention,, and helps understanding with Figure 1A-1C only using two light shields that the photoresist layer process of (each exposure only use a light shield) of double exposing is example.
Please refer to Figure 1A-1C, it is in one of the present invention preferred embodiment, after continuously the light shield 115 that the figure spacing/width of use own is bigger and identical exposes with 125 pairs of photoresist layers 104, obtains the situation of the less and inconsistent pattern of figure spacing/width.Please refer to Figure 1A, light shield 115 lightproof part width own are all b
1, light transmission part 110,120,130 width therebetween are all a
1And light shield 125 lightproof part width are all b
2, its value for example with the lightproof part width b of light shield 115
1Identical, and the width of light transmission part 140,150,160 is all a
2, its value for example with light shield 115 in light transmission part 110,120,130 width a
1Identical.With respect to light shield 115 and light shield 125, it is the position of light transmission part 110,120,130 and light transmission part 140,150,160 segment distance that staggers separately, makes that the position of light transmission part is staggered separately.For example, distance is d between the light transmission part 140 of the light transmission part 110 of light shield 115 and light shield 125
1, and distance is d between the light transmission part 120 of the light transmission part 140 of light shield 125 and light shield 115
2In this example, spacing d
1With spacing d
2Value be inequality.
Then, please refer to Figure 1B, with light source 188 and 104 exposures of 115 pairs of photoresist layers of light shield, then light source 188 can pass the light transmission part 110,120,130 of light shield 115, and forms exposure figure 114,124,134 in photoresist layer.Please refer to Fig. 1 C, then with light source 188 and 104 exposures of 125 pairs of photoresist layers of light shield, then light source 188 can pass the light transmission part 140,150,160 of light shield 125, and adds exposure figure 144,154,164 in photoresist layer 104.In exposure figure 114～164, shown in Figure 1B, for exposure figure 114,124,134, its width is all a
1' and spacing be all b
1', therefore have bigger processing procedure nargin; And shown in Fig. 1 C, for exposure figure 144,154,164, its width is all a
2' and spacing be all b
2', therefore have bigger processing procedure nargin equally.
Shown in Fig. 1 C, in the photoresist layer 104 between exposure figure 114 and the exposure figure 144 apart from being d
1', distance is d then between exposure figure 144 and the exposure figure 124
2', spacing d wherein
1' with spacing d
2' and inequality, and the two is all less than the exposure figure spacing b that uses single light shield 115,125 gained
1' (Figure 1B) or b
2', this is because the relation that graph position staggers in light shield 115 and the light shield 225.Therefore, variation by two light mask image positions, can use two identical light shields of figure spacing/width to form the different exposing patterns of figure spacing/width, or say and to use two bigger light shields of figure spacing/width to form the less exposing patterns of figure spacing/width.Apparently, the light shield that figure spacing/width is identical is in the nargin of the micro-photographing process processing procedure nargin greater than the different light shields of figure spacing/width; Perhaps the processing procedure nargin of the light shield that figure spacing/width is bigger is also greater than the processing procedure nargin of the less light shield of figure spacing/width, thereby the present invention obviously can improve the processing procedure nargin of little shadow.
In addition,, can use some dissimilar light shields, for example optical nearing correction (Optical Proximity Correction for making the more close original design of exposing patterns; OPC) light shield and phase-shift type light shield (Phase Shifting Mask; PSM) structure.Wherein optical nearing correction light shield comprise boost line (Assistant Bars), capitate (Hammerhead), hornblock (Serifs), with the optical nearing correction pattern of concavo-convex (Jogs) pattern; And the phase-shift type light shield comprises decay (Attenuated) phase-shift type light shield, ring (Rim) phase-shift type light shield or the like.
Please refer to Fig. 2 A-2B, it is in the preferred embodiment of the present invention, and the identical optical nearing correction light shield of two figure spacings is with the situation of boost line as the pattern correction, and the top of Fig. 2 A and Fig. 2 B is a profile, and the below is a vertical view.Wherein, light shield 215 has the main light transmission part 210,220,230 of the main body that is used for forming pattern, and the boost line 214,224,234 that is used for revising pattern; Light shield 225 then has the main light transmission part 240,250,260 of the main body that is used for forming pattern, and the boost line 244,254,264 that is used for revising pattern.
In the present embodiment, the boost line of two light shields 215 and 225 figure is positioned on the same light shield, please comparison diagram 2A and Fig. 2 B in the position of each light transmission part and boost line, boost line 214,224,234 is respectively the boost line of main light transmission part 210,220,230 herein, and boost line 244,254,264 is respectively the boost line of main light transmission part 240,250,260.
In addition, optical nearing correction light shield still comprises the correction of hornblock shape figure, this hornblock correction for example be present in light shield 215 on.Please refer to Fig. 2 C, hornblock 285 is positioned at the end of the threadlike graph shown in the figure, can produce optical nearing correction effect when exposure, and form the exposure figure that is bordering on the right angle that is indicated as Fig. 2 C dotted line.
Then illustrate in the preferred embodiment of the present invention, the light shield that uses be the situation of phase-shift type light shield, and be example with ring phase-shift type light shield, shown in Fig. 3 A and Fig. 3 B with attenuating phase-shift formula light shield.What should be specified is herein, because the change in pattern of the identical light shield of two figure spacings is similar, only to be example one of in two phase-shift type light shields, the situation of another light shield can be analogized and get herein.
Please refer to Fig. 3 A, its be attenuating phase-shift formula light shield profile (on) with front view (descending).In the light shield shown in Fig. 3 A 315, light transmission part 310 is spaced with semi-transparent phase shift layer 320.When exposing, and to compare by the light wave of light transmission part 310, the electromagnetic field phase angle difference of the light wave by semi-transparent phase shift layer 320 is 180 °, and amplitude can weaken.Therefore when exposure, the outer light wave electromagnetic field at 310 edges, light transmission part can be cancelled, and makes the exposing patterns quality better.
In addition, Fig. 3 B for the profile of ring phase-shift type light shield (on) with front view (descending).In the ring phase-shift type light shield 355 shown in Fig. 3 B, semi-transparent phase shift layer 370 is the edge that is positioned at lightproof part 360.When exposing, and to compare by the light wave of light transmission part 350, the electromagnetic field phase angle difference of the light wave by semi-transparent phase shift layer 370 is 180 °, and amplitude can weaken.Therefore when exposure, the outer light wave electromagnetic field at 350 edges, light transmission part can be cancelled, and makes the exposing patterns quality better.
Therefore, by above-mentioned optical nearing correction light shield, attenuating phase-shift formula light shield or ring phase-shift type light shield, can further improve the nargin and the precision of processing procedure of the present invention.
As mentioned above, because in the light shield group structure and micro-photographing process of preferred embodiment of the present invention, be to use two light shields that itself have identical figure spacing/width to carry out single exposure respectively, and after double exposure, obtain the exposing patterns of tool different graphic spacing/width, so can be in the processing procedure, and photoresist layer be exposed with its optimum exposure condition according to the figure spacing/width of each mask pattern.Because the micro-photographing process nargin of the exposing patterns after each decomposes all can tune to optimum, so generally, the micro-photographing process nargin of the complete exposing patterns of last gained also can increase.
In addition, because in the light shield group structure and micro-photographing process of preferred embodiment of the present invention, be to use two bigger light shields of figure spacing/width to carry out single exposure respectively, and after double exposure, obtain having the exposing patterns of less figure spacing/width, so the interference of adjacent light transmission part is reduced, make the exposing patterns quality-improving.
In addition, too small for figure spacing/width, or change excessive exposing patterns, and more its decomposition can be made two roughly the same light shields of above figure spacing/width, carry out single exposure with each light shield respectively again.In exposure process each time, all can use the optimum exposure condition of each light shield, obtain preferable global pattern with after finishing in multiexposure, multiple exposure.
In addition, except that the illustrational threadlike graph of the present invention, if desire forms the island figure or the contact window figure of spacing/width variant (or too small), also can use light shield group structure and micro-photographing process proposed by the invention, it is disassembled be the island figure of spacing/width roughly the same (or bigger) or several light shields of contact window figure, and use each light shield to carry out single exposure respectively to form predetermined pattern, to promote the quality of pattern.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this operator, without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is as the criterion when defining with claims scope.
Claims (19)
1, a kind of light shield group structure, it is applicable in the micro-photographing process of photoresist layer, it is characterized in that: it forms the predetermined exposure pattern in photoresist layer, it comprises a plurality of light shields of each tool different pattern, and after with each light shield this photoresist layer being carried out single exposure respectively, can obtain this predetermined exposure pattern.
2, light shield group structure according to claim 1, it is characterized in that: wherein the figure spacing/width of each light shield itself is identical, and the figure of predetermined exposure pattern spacing/width difference.
3, light shield group structure according to claim 1, it is characterized in that: wherein the figure spacing/width of each light shield itself is greater than the figure spacing/width of this predetermined exposure pattern.
4, light shield group structure according to claim 1 is characterized in that: wherein light shield group structure comprises that a plurality of light shield combination in any by different shape form.
5, light shield group structure according to claim 4, it is characterized in that: these light shields comprise a plurality of phase-shift type light shields.
6, light shield group structure according to claim 5 is characterized in that: the pattern of these phase-shift type light shields comprises ring phase-shift type light shield.
7, light shield group structure according to claim 5, it is characterized in that: the pattern of these phase-shift type light shields comprises attenuating phase-shift formula light shield.
8, light shield group structure according to claim 4 is characterized in that: these light shields comprise a plurality of optical nearing correction light shields.
9, light shield group structure according to claim 8 is characterized in that: the pattern of the optical nearing correction pattern in these optical nearing amendment type light shields comprises the boost line figure.
10, light shield group structure according to claim 8 is characterized in that: the pattern of the optical nearing correction pattern in these optical nearing amendment type light shields comprises the hornblock figure.
11, light shield group structure according to claim 4, it is characterized in that: the pattern characteristics of these light shields comprises threadlike graph.
12, light shield group structure according to claim 4, it is characterized in that: the pattern characteristics of these light shields comprises the figure of contact hole pattern.
13, a kind of light shield group structure, be applicable in the micro-photographing process of photoresist layer, it is characterized in that: it forms one of figure spacing/width difference predetermined exposure pattern in this photoresist layer, this light shield group structure comprises a plurality of light shields of each tool different pattern, wherein the figure spacing/width of the pattern of each these light shield itself is identical, and after with each these light shield this photoresist layer being carried out single exposure respectively, can obtain this predetermined exposure pattern.
14, light shield group structure according to claim 13 is characterized in that: wherein light shield group structure comprises that a plurality of light shield combination in any by different shape form.
15, light shield group structure according to claim 14, it is characterized in that: these light shields comprise a plurality of phase-shift type light shields.
16, light shield group structure according to claim 14 is characterized in that: these light shields comprise a plurality of optical nearing correction light shields.
17, light shield group structure according to claim 14, it is characterized in that: the pattern characteristics of these light shields comprises threadlike graph.
18, light shield group structure according to claim 14, it is characterized in that: the pattern characteristics of these light shields comprises the figure of contact hole pattern.
19, a kind of micro-photographing process that uses according to claim 1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17 or 18 described light shield group structures, it is characterized in that: wherein be with each light shield photoresist layer to be carried out single exposure respectively, to obtain the predetermined exposure pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01109734 CN1206701C (en) | 2001-03-29 | 2001-03-29 | Optical mask structure and microphotograph process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01109734 CN1206701C (en) | 2001-03-29 | 2001-03-29 | Optical mask structure and microphotograph process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1378239A true CN1378239A (en) | 2002-11-06 |
| CN1206701C CN1206701C (en) | 2005-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01109734 Expired - Lifetime CN1206701C (en) | 2001-03-29 | 2001-03-29 | Optical mask structure and microphotograph process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100399508C (en) * | 2004-07-02 | 2008-07-02 | 富士通株式会社 | Semiconductor manufacturing method and an exposure mask |
| CN100478782C (en) * | 2003-06-16 | 2009-04-15 | 旺宏电子股份有限公司 | Exposure process for different levels |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN103969939A (en) * | 2014-04-16 | 2014-08-06 | 京东方科技集团股份有限公司 | Mask plate |
-
2001
- 2001-03-29 CN CN 01109734 patent/CN1206701C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100478782C (en) * | 2003-06-16 | 2009-04-15 | 旺宏电子股份有限公司 | Exposure process for different levels |
| CN100399508C (en) * | 2004-07-02 | 2008-07-02 | 富士通株式会社 | Semiconductor manufacturing method and an exposure mask |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN102608860B (en) * | 2012-03-26 | 2016-02-03 | 深圳市华星光电技术有限公司 | Lithographic methods, reticle combination and exposure system |
| CN103969939A (en) * | 2014-04-16 | 2014-08-06 | 京东方科技集团股份有限公司 | Mask plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1206701C (en) | 2005-06-15 |
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