CN103969939A - Mask plate - Google Patents
Mask plate Download PDFInfo
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- CN103969939A CN103969939A CN201410153709.5A CN201410153709A CN103969939A CN 103969939 A CN103969939 A CN 103969939A CN 201410153709 A CN201410153709 A CN 201410153709A CN 103969939 A CN103969939 A CN 103969939A
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- light blocking
- blocking layer
- mask plate
- open area
- light
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Abstract
The invention provides a mask plate, belongs to the field of the display technology, and can solve the problem of the limited application range caused by a relatively large underexposure area of the conventional single-layer mask plate. The mask plate comprises a substrate and light blocking layers, wherein the light blocking layers are arranged on both sides of the substrate, and are used for shielding exposure light; the light blocking layers comprise a first light blocking layer near the exposure light and a second light blocking layer far away from the exposure light; the first light blocking layer and the second light blocking layer have opening areas with coincident opening center lines. By the design of the double light blocking layers, the mask plate can be used for manufacturing products with a narrower linewidth, and is more suitable for manufacturing products with high resolution.
Description
Technical field
The invention belongs to display technique field, be specifically related to a kind of mask plate.
Background technology
Resolution is one of most important index of weighing picture quality, and improving resolution is the main flow trend of current techniques development.But improving resolution can not be to sacrifice other display performances (as aperture opening ratio, contrast etc.) as cost.So the design of product figure is inevitable to narrow linewidth future development.
Conventionally the mask used plate of proximity printing manufacture craft (Mask) is individual layer chromium film mask plate (Mask).As shown in Figure 1, individual layer chromium film mask plate comprises substrate 1 and the chromium rete 2 that is positioned at substrate 1 one sides, and this chromium rete has open area 3.
The ultraviolet light of the incident mask plate that proximity printing machine sends is collimated light, but owing to being subject to Optical System Design and manufacturing restriction, light still has certain angle of divergence (α in Fig. 2), is generally 3 ° of left and right.As shown in Figure 2, photoresist 7 is coated in functional layer 8.Direct projection light in exposure light is forming exposure area 5 through open area 3 on photoresist 7, and the size of this exposure area 5 equates (in Fig. 2, unification L1 represents) with the size of open area 3; Divergent rays in exposure light forms in under-exposure region 6(Fig. 2 and represents with L through open area 3 on photoresist 7); All the other photoresists 7 are not exposed.
As shown in Figure 2, generally angle of divergence alpha is 3 °, and mask plate (Mask) thickness h 1 is 8000um, and the distance h 2 of mask plate and photoresist 7 is 200um, therefore, causes α=200tan3 °=10.5um of under-exposure region 6 length L=h2tan by oblique emergent light;
If the distance of mask plate and photoresist 7 is 100um, α=100tan3 °=5.25um of under-exposure region 6 length L=h2tan.
Visible because exposure light has certain angle of divergence, the scope (comprising exposure area 5 and under-exposure region 6) that photoresist is exposed is more much bigger than the open area of mask plate 3, causes under-exposure region 6 larger.If under-exposure region 6 can be reduced can the critical size of photoresist be done little.But due to the existence in above-mentioned under-exposure region 6, cause existing individual layer chromium film mask plate not to be suitable for the manufacture craft of the narrow linewidth product that critical size is less than under-exposure region 6.
Under proximity printing technique, the photoresist structure in under-exposure region 6 is looser, is easily developed liquid and shows to fall, and therefore can utilize under exposed disposal route to regulate critical size.
But because the photoresist structure in under-exposure region 6 is looser, while therefore manufacturing narrow linewidth product, surface topography is coarse, easily cause bad and reduce performance index, crosstalk between film, broken string, low contrast, chromaticity distortion, pixel as fallen etc.
As shown in Figure 3, adopt the high resolving power narrow linewidth product of preparation after the exposure of individual layer chromium film mask plate, owing to adopting under exposed disposal route to control critical size, cause photoresist structure loose, so that figure broken string and low seriously bad of contrast on border.
As shown in Figure 4, adopt the high resolving power narrow linewidth product of preparing after the exposure of individual layer chromium film mask plate, because the disposal route that employing owes to expose to the sun is controlled critical size, cause photoresist not to be subject to abundant exposure, in developing procedure, surface topography is damaged.
Photoresist marginal texture is more unstable simultaneously, is more easily subject to the impact of the factors such as solution level fluctuation and pre-bake temperature homogeneity, has reduced the redundance of technique.
The size in visible under-exposure region is subject to the impact of the angle of divergence very large, effectively reduces the angle of divergence and can significantly reduce the size in under-exposure region 6.
In prior art, be all to adopt lens arrangement to converge light, further strengthen the rectilinearity of light, but array structure thereof complexity, machining precision is high, with high costs, and practical degree is not high aborning.
Summary of the invention
The monofilm mask plate that the object of the invention is to solve prior art, because under-exposure region is larger, causes the problem being of limited application, and provides a kind of and can reduce the mask plate in under-exposure region.
The technical scheme that solution the technology of the present invention problem adopts is a kind of mask plate, comprise substrate and setting substrate both sides for blocking the light blocking layer of exposure light, described light blocking layer comprises the first light blocking layer of close exposure light and the second light blocking layer away from exposure light, and described the first light blocking layer and the second light blocking layer have the open area that open centre line overlaps.
Preferably, the opening size of the open area of described the first light blocking layer and the second light blocking layer equates.
Preferably, the opening size of the open area of described the first light blocking layer is greater than the opening size of the open area of the second light blocking layer.
Preferably, the opening size of the open area of described the second light blocking layer is greater than the opening size of the open area of the first light blocking layer.
Preferably, the absolute value of the opening size difference of the open area of the opening size of the open area of described the second light blocking layer and the first light blocking layer is less than or equal to the technique redundance of mask plate.
Preferably, described light blocking layer is chromium rete.
Mask plate of the present invention, owing to adopting two light blocking layer designs, can be used in and makes the more making of narrow linewidth product, is more suitable for the making in high-resolution products.
Brief description of the drawings
Fig. 1 is the structural representation of the monochrome layer mask plate of prior art;
Fig. 2 is the exposure schematic diagram of the monochrome layer mask plate of prior art;
Fig. 3 is the effect one that in the composition technique of prior art, photoresist adopts the under-exposure processing of monochrome layer mask plate;
Fig. 4 is the effect two that in the composition technique of prior art, photoresist adopts the under-exposure processing of monochrome layer mask plate;
Fig. 5 is the exposure schematic diagram of two chromium layer mask plate in embodiments of the invention 1;
Fig. 6 is the exposure schematic diagram of the open area of the first light blocking layer in embodiments of the invention 1 mask plate while being greater than the open area of the second light blocking layer;
Fig. 7 is the exposure schematic diagram of the open area of the second light blocking layer in embodiments of the invention 1 mask plate while being greater than the open area of the first light blocking layer.
Wherein:
1. substrate; 2. chromium rete; 3. open area; 31. first open areas; 32. second open areas; 4. light blocking layer; 41. first light blocking layers; 42. second light blocking layers; 5. exposure area; 6. under-exposure region; 7. photoresist; 8. functional layer.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1
As shown in Fig. 5-7, this enforcement provides a kind of mask plate, this mask plate comprise substrate 1 and substrate 1 both sides that arrange for blocking the light blocking layer of exposure light, described light blocking layer comprises the first light blocking layer 41 of close exposure light and the second light blocking layer 42 away from exposure light, and described the first light blocking layer 41 and the second light blocking layer 42 have the first open area 31 and the second open area 32 that open centre line overlaps.
As shown in Figure 5, the open area 31 of the first light blocking layer 41 and the open area of the second light blocking layer 42 32 center lines overlap, in the time that exposure light (representing with band arrow line in Fig. 5) irradiates mask plate, the direct projection light in exposure light forms exposure area 5 through the intersection of the first open area 31 and the second open area 32 on photoresist like this.
The light causing due to the reason of light system self has the angle of divergence, and the divergent rays in exposure light forms under-exposure region 6 through the non-coincidence part of the first open area 31 and the second open area 32 on photoresist; The photoresist of remainder is not exposed.
Known according to geometric knowledge: L=L1 × h2/h1
Wherein, L is the length in under-exposure region 6;
L1 is the length of the intersection of open area 31,32;
H1 is the thickness of mask plate;
H2 is the distance between mask plate and photoresist 7;
In the calculating of the present embodiment, all ignore the thickness of light blocking layer.
When the length L 1 of the intersection of the first open area 31 and the second open area 32 is 5um, the distance h 2 between mask plate and photoresist 7 is 200um; When the thickness h 1 of mask plate is 8000um, under-exposure region 6 length L=200 × 5/8000=0.125um.And under-exposure region 6 length of the mask plate of same single light blocking layer are 10.5um, the mask plate of visible two light blocking layers, after exposure, has greatly reduced the length in under-exposure region 6.Tan α=L/h2=0.125/200=0.000625 as can be seen from Figure 5, the scattering angle that can calculate now according to inverse trigonometric function is 0.35809 °, the open area of the mask plate of visible pair of light blocking layer can become almost direct projection from existing oblique fire by the exposure light from mask plate outgoing, suppress or eliminate the under-exposure region 6 of being caused by oblique fire, thereby making under-exposure region 6 almost nil.Therefore the mask plate of of the present invention pair of light blocking layer can be used in and makes the more making of narrow linewidth product, is more suitable for the making in high-resolution products.
Because the mask plate of two light blocking layers does not need to adopt under exposed method when the exposure, first, ensure the structural strength of exposure area photoresist, be not easy to be developed and rear operation is destroyed, avoid the bad generation such as film, broken string; Meanwhile, improve contrast and the surface topography of photoresist, thereby promoted the properties of product of colored filter contrast and color aspect; In addition, the critical size of photoresist is subject to the impact of solution level fluctuation little, has increased the redundance of technique; In addition, suppress spread angle by the collimation to the exposure light of dispersing, thereby reduced the requirement to exposure machine, and dwindled the difference of different exposure machines.
It is very little that mask plate when exposure live width of two light blocking layers is affected by exposing clearance, therefore do not need to adopt minimum exposing clearance to make narrow linewidth product, and larger exposing clearance can avoid photoresist to pollute mask plate; Because can adopt larger exposing clearance, reduce the risk that mask plate is scratched by the foreign matter of substrate surface (as glass chip).
Particularly, as shown in Figure 5, the first open area 31 and the second open area 32 opening sizes equate.Such the first open area 31 and the second open area 32 center lines overlap, and are more conducive to the collimation to exposure light.But, need to be by the first light blocking layer 41 of mask plate and the second light blocking layer 42 accurate alignments, mask plate difficulty of processing is larger.
In the situation that ensureing that under-exposure region 6 suitably increases, in order to reduce mask plate machining precision, increase mask plate processing technology redundance, make more easily.Can adopt the mask structure being shown in Fig. 6.
Particularly, the opening size of the first open area 31 is greater than the opening size of the second open area 32.
Structure as shown in Figure 6, the second open area 32 is identical with Fig. 5, and the absolute value of different the is opening size of the first open area 31 and the opening size difference of the second open area 32 is less than or equal to the technique redundance of mask plate.
For example, the opening size of the first open area 31 is L1+2a, and the first 31Xiang both sides, open area respectively increase a um; The technique redundance of open area 3 that we only need to control the first light blocking layer 41 and the second light blocking layer 42 is like this in a um.The difficulty of processing that has reduced mask plate so greatly.
Now the length of the increase in under-exposure region is designated as L2, in Fig. 6, the intersection point of two intersection oblique rays is designated as D, the intersection point of the upper surface of intersection oblique ray and photoresist 7 is designated as respectively B, C, the intersection point of the upper surface of intersection oblique ray and substrate 1 is designated as respectively E, F, known according to geometric relationship, triangle EFD is similar with triangle BCD, according to the principle of similar triangles, and known L2/a=h2/h1.
If the length L 1 of the open area intersection of the first light blocking layer of mask plate and the second light blocking layer is 5um, a is 2.5um, established technology control of redundancy is in 2.5um, in the time that mask plate and substrate gap are 200um, now, under-exposure region is L2=a × h2/h1=0.0625um for increasing length, and the visible under-exposure region increasing is smaller, very little on the final impact of product, the mask plate with this structure but can but can reduce greatly processing cost and the difficulty of processing of mask plate.
Can certainly adopt another structure as shown in Figure 7, the opening size of the second open area 32 is greater than the opening size of the first open area 31.Structure as shown in Figure 7, the first open area 31 is identical with Fig. 5, and the absolute value of different the is opening size of the first open area 31 and the opening size difference of the second open area 32 is less than or equal to the technique redundance of mask plate.
For example, the opening size of the second open area 32 is L1+2a, and the second 32Xiang both sides, open area respectively increase a um.
The technique redundance of open area that we only need to control the first light blocking layer 41 and the second light blocking layer 42 is like this in a um.The difficulty of processing that has reduced mask plate so greatly.
Now the length of the increase in under-exposure region 6 is designated as L2, the intersection point of two intersection oblique rays that penetrate from the edge of the first open area 31 in Fig. 7 is designated as F, be designated as B through the oblique ray of the second open area 32 and the intersection point of these the second open area 32 1 lateral edges, be designated as respectively C with the intersection point of the upper surface of photoresist 7, the straight line perpendicular to photoresist 7 upper surfaces of ordering through F and the intersection point of photoresist 7 upper surfaces are designated as E, are designated as D with the intersection point of the lower surface of substrate 1.
Known according to geometric relationship, triangle BDF is similar with triangle CEF, according to the principle of similar triangles, and known (a+a+L1)/(L2+L1+L)=h1/ (h1+h2).
If the length L 1 of the open area intersection of the first light blocking layer 41 of mask plate and the second light blocking layer 42 is 5um, a is 2.5um, established technology control of redundancy is in 2.5um, in the time that mask plate and substrate gap are 200um, now, under-exposure region 6 is L2=2.625um for increasing length, and the visible under-exposure region 6 increasing is smaller, very little on the final impact of product, the mask plate with this structure but can but can reduce greatly processing cost and the difficulty of processing of mask plate.
Preferably, above-mentioned light blocking layer is chromium rete.Should be understood that, other material that can shut out the light is also suitable for.
Be understandable that, above embodiment is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (6)
1. a mask plate, it is characterized in that, comprise substrate and setting substrate both sides for blocking the light blocking layer of exposure light, described light blocking layer comprises the first light blocking layer of close exposure light and the second light blocking layer away from exposure light, and described the first light blocking layer and the second light blocking layer have the open area that open centre line overlaps.
2. mask plate as claimed in claim 1, is characterized in that, the opening size of the open area of described the first light blocking layer and the second light blocking layer equates.
3. mask plate as claimed in claim 1, is characterized in that, the opening size of the open area of described the first light blocking layer is greater than the opening size of the open area of the second light blocking layer.
4. mask plate as claimed in claim 1, is characterized in that, the opening size of the open area of described the second light blocking layer is greater than the opening size of the open area of the first light blocking layer.
5. the mask plate as described in claim 3 or 4, is characterized in that, the absolute value of the opening size difference of the open area of the opening size of the open area of described the second light blocking layer and the first light blocking layer is less than or equal to the technique redundance of mask plate.
6. mask plate as claimed in claim 1, is characterized in that, described light blocking layer is chromium rete.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153709.5A CN103969939A (en) | 2014-04-16 | 2014-04-16 | Mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153709.5A CN103969939A (en) | 2014-04-16 | 2014-04-16 | Mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103969939A true CN103969939A (en) | 2014-08-06 |
Family
ID=51239607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410153709.5A Pending CN103969939A (en) | 2014-04-16 | 2014-04-16 | Mask plate |
Country Status (1)
| Country | Link |
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| CN (1) | CN103969939A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849966A (en) * | 2015-04-13 | 2015-08-19 | 合肥京东方光电科技有限公司 | Mask plate, manufacturing method thereof, and exposure apparatus |
| CN111090190A (en) * | 2020-03-22 | 2020-05-01 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, display panel and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378239A (en) * | 2001-03-29 | 2002-11-06 | 华邦电子股份有限公司 | Optical mask structure and microphotograph process |
| CN101393387A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for manufacturing same |
| CN101617274A (en) * | 2007-04-02 | 2009-12-30 | 株式会社尼康 | Exposure method, exposure device, light converging pattern form assembly, mask and manufacturing method |
-
2014
- 2014-04-16 CN CN201410153709.5A patent/CN103969939A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378239A (en) * | 2001-03-29 | 2002-11-06 | 华邦电子股份有限公司 | Optical mask structure and microphotograph process |
| CN101617274A (en) * | 2007-04-02 | 2009-12-30 | 株式会社尼康 | Exposure method, exposure device, light converging pattern form assembly, mask and manufacturing method |
| CN101393387A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for manufacturing same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849966A (en) * | 2015-04-13 | 2015-08-19 | 合肥京东方光电科技有限公司 | Mask plate, manufacturing method thereof, and exposure apparatus |
| CN111090190A (en) * | 2020-03-22 | 2020-05-01 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, display panel and electronic equipment |
| CN111090190B (en) * | 2020-03-22 | 2020-06-23 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, display panel and electronic equipment |
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Application publication date: 20140806 |
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