CN1353450A - Method for generating electrically conducting transparent substrate - Google Patents
Method for generating electrically conducting transparent substrate Download PDFInfo
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- CN1353450A CN1353450A CN 00133509 CN00133509A CN1353450A CN 1353450 A CN1353450 A CN 1353450A CN 00133509 CN00133509 CN 00133509 CN 00133509 A CN00133509 A CN 00133509A CN 1353450 A CN1353450 A CN 1353450A
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- transparency carrier
- transparent conductive
- conductive substrate
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- adhesion coating
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Abstract
A method for forming an electrically conductive transparent base plate includes such steps as generating bottom layer and electrically conductive transparent film on the first transparent base plate, generating protecting layer and adhesive layer on different surfaces of the second transparent base plate, and adhering both base plates together.
Description
The invention relates to a kind of method that forms transparent conductive substrate, particularly about a kind of transparent conducting film that forms with method as transparency electrode, be applicable to different fields such as solar cell, optical image sensor, electroluminescent display and panel of LCD.
Fast development along with the photoelectric project technology, no matter be solar cell (solar cells), optical image sensor (optical image sensors), photovoltaic such as electricity slurry flat-panel screens (plasma displaypanel), electroluminescent display (electroluminescence display) and panel of LCD, all full-fledged gradually, and be that human life brings great change.
In above-mentioned opto-electronics, each needs different processing procedure material and spare part different photovoltaic, however the transparent conductive substrate common demand that is it, and indispensable.Transparent conductive substrate is to form transparent conductive film on a transparent substrate, with the transparency electrode as the usefulness that drives photovoltaic.Transparent conductive film is indium stannum alloy oxide-film (Indium Tin Oxide normally; 1TO), utilize indium oxide and tin oxide to be mixed and made into target, on transparency carrier, form film via sputter process (sputter) or vacuum evaporation processing procedure (vacuumvaporation) again with ratio.Its major defect is:
1, traditional transparent conductive substrate is that transparent conductive film is formed directly on the clear glass.The formed transparent conductive substrate of this processing procedure not only makes moist easily and makes dirty, more because of clear glass does not have elasticity, and makes the easy scratch of formed transparent conductive substrate, distortion even burst apart.
2, traditional indium stannum alloy oxide-film reflecting ratio is bigger, and the light transmittance of formed transparent conductive substrate is limited to, and can't satisfy the requirement of modern photovoltaic.
Therefore, develop and a kind ofly not only have waterproof, antifouling, corrosion protection, function such as anti-flaming, and the transparent conductive substrate with excellent in flexibility, burnish resistance, scratch resistance, important problem of photoelectricity dealer just become.
Main purpose of the present invention provides a kind of method that forms transparent conductive substrate.
Secondary objective of the present invention provides a kind of transparent conducting film that forms with the method as transparency electrode.
A further object of the present invention provides a kind of transparent conductive substrate with transparent conductive film.
The object of the present invention is achieved like this: a kind of method that forms transparent conductive substrate, it is characterized in that: it comprises the steps:
A, provide first transparency carrier;
B, on the first surface of described first transparency carrier, form transparent conductive film;
C, provide second transparency carrier;
D, on the first surface of described second transparency carrier, form a protective layer;
E, on the second surface of described second transparency carrier, form an adhesion coating;
F, described second transparency carrier is adhered mutually with described first transparency carrier, wherein said second transparency carrier system is pasted to the second surface of described first transparency carrier with described adhesion coating.
Before forming described transparent conductive film, comprise the step that forms a bottom, wherein said bottom is with the formed silicon dioxide layer of silicomethane.Described transparent conductive film is an indium stannum alloy oxide-film, and its thickness is between 0.01 micron to 0.5 micron.The thickness of described protective layer is between 0.01 micron to 15 microns.The thickness of described adhesion coating is between 1 micron to 15 microns.
A kind of method that forms transparent conductive substrate, it comprises the steps:
A, provide first transparency carrier;
B, on the first surface of described first transparency carrier, form a transparent conductive film;
C, on the second surface of described first transparency carrier, form an adhesion coating;
D, provide second transparency carrier;
E, on the first surface of described second transparency carrier, form a protective layer;
F, described first transparency carrier is adhered mutually with described second transparency carrier, wherein said first transparency carrier system is pasted to the second surface of described second transparency carrier with described adhesion coating.
Before forming described transparent conductive film, comprise the step that forms a bottom, wherein said bottom is with the formed silicon dioxide layer of silicomethane.Described transparent conductive film is an indium stannum alloy oxide-film, and its thickness is between 0.01 micron to 0.5 micron.The thickness of described protective layer is between 0.01 micron to 15 microns.The thickness of described adhesion coating is between between 1 note of the ancient Chinese rice to 15 micron.
In a word, the present invention discloses a kind of method that forms transparent conductive substrate.First transparency carrier at first is provided, and on the first surface of described first transparency carrier, forms a bottom and a transparent conductive film successively.Next second transparency carrier is provided, and on the first surface of described second transparency carrier, forms a protective layer.Next on the second surface of described second transparency carrier, form an adhesion coating, and described second transparency carrier adhered mutually with described first transparency carrier, wherein said second transparency carrier system is pasted on the second surface of described first transparency carrier with described adhesion coating.
In another embodiment of the present invention, described adhesion coating can also be coated with on the above first transparency carrier, more described second transparency carrier be adhered mutually with described first transparency carrier, can reach identical effect.
The present invention more discloses a kind of transparent conductive substrate, and it includes one first transparency carrier, one second transparency carrier, a transparent conductive film, a protective layer and an adhesion coating.Wherein said transparent conductive film is to be positioned on the first surface of described first transparency carrier, and described protection series of strata are positioned on the first surface of stating second transparency carrier.Described adhesion coating is then between described first transparency carrier and second transparency carrier, in order to the second surface of described first transparency carrier of adhering and the second surface of described second transparency carrier.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Fig. 1 is the processing procedure generalized section that forms transparent conductive film in the embodiment of the invention 1.
Fig. 2 is the processing procedure generalized section that forms transparent conductive film in the embodiment of the invention 2.
Fig. 3 forms the processing procedure generalized section of protective layer for the present invention.
Fig. 4 is the processing procedure generalized section that forms transparent conductive substrate in the embodiments of the invention 3.
Fig. 5 is the processing procedure generalized section that forms transparent conductive substrate in the embodiments of the invention 4.
Fig. 6 is the processing procedure generalized section that the coating adhesion coating forms transparent conductive substrate in the embodiments of the invention 5.
Fig. 7 is the processing procedure generalized section that the coating adhesion coating forms transparent conductive substrate in the embodiments of the invention 6.
Embodiment 1
Consult Fig. 1, the present invention discloses a kind of method that forms transparent conductive film, particularly about a kind of transparent conducting film that forms with method as transparency electrode, be common to different fields such as solar cell, optical image sensor, electroluminescent display, plasma display panel and panel of LCD.
The processing procedure of formation transparent conductive film of the present invention at first provides first transparency carrier 10, in order to form transparent conductive film thereon.The thickness of first transparency carrier 10 is between 10 microns to 250 microns, can be soda-lime glass (soda lime glass), no alkali metal glass (non, alkali glass), polyethylene terephthalic acid (TPA) (PET), polaroid or polymethacrylates (PMMA) etc.
Next on first transparency carrier 10, form a transparent conductive film 20.Described transparent conductive film 20 common indium stannum alloy oxide-films (ITO), its thickness is between the 0.01-0.5 micron, utilize indium oxide and tin oxide to be mixed and made into target with 9: 1 ratio, on first transparency carrier 10, form film via sputter process again, have good light transmittance and conductivity.Described sputter process is to carry out in a sputter reacting furnace, in the course of reaction described first transparency carrier 10 is heated between 80 ℃ to 300 ℃; And reacting furnace vacuumized, its air pressure is maintained between the IE-4Pa to 5E-4Pa, and feed inert gas such as argon gas to keep specific reaction.
Certainly, the formation of transparent conductive film 20 of the present invention does not limit the use sputtering method, and in other embodiments of the invention, described transparent conductive film 20 is to utilize vacuum vapour deposition (vacuumevaporatiOn) to form; Or be to utilize ion plating (ion plating method) to form.
Embodiment 2
With reference to figure 2, in enforcement 2 of the present invention, before forming transparent conductive film 20, deposit one deck bottom 15 earlier.Described bottom 15 is with the formed silicon dioxide layer of silicomethane, and its thickness is between 0.01 micron to 15 microns, and the growth of its energy strengthening subsequent transparent conductive film 20 makes it fine and close more.
With reference to figure 3, among the present invention, the processing procedure that forms protective layer comprises, at first provides second transparency carrier 30, in order to form protective layer thereon.The thickness of described second transparency carrier 30 can be soda-lime glass, no alkali metal glass, polyethylene terephthalate (PET), polaroid or polymethacrylates (PMMA) etc. between 10 microns-1.1 millimeters (mm).
Next on described second transparency carrier 30, form protective layer 40.The thickness of described protective layer 40 is between 0.01 micron to 15 microns; system is made of polyurethane (polyurethane), acrylic resin (acrylic resin), silicones (silicone resin) or its mixture, to reach waterproof, antifouling, corrosion protection, anti-function of dazzling.The present invention more adds antireflection and anti-dizzy material, with the light transmittance of the formed transparent conductive substrate of further enhancement in the processing procedure that forms protective layer 40.
Embodiment 3
With reference to figure 4, it forms the processing procedure generalized section of transparent conductive substrate for the present invention.Another side coating last layer adhesion coating 50 at described second transparency carrier 30.Described adhesion coating 50 is made of acrylic acid, silicon and rubber, and its thickness is between 1 micron-15 microns.Importantly, it has the coefficient of elasticity between 1E5-1E7 dyne/square centimeter, when described second transparency carrier 30 and described first transparency carrier 10 bonding and form transparent conductive substrate after, because of described adhesion coating 50 has cushion effect (cushioning effect), can make described transparent conductive substrate have excellent in flexibility and burnish resistance (friction, proofing) and scratch resistance (scratch, proofig).
Embodiment 4
With reference to figure 5, it is for described second transparency carrier 30 and described first transparency carrier, the 10 bonding generalized sections that form transparent conductive substrate.Wherein be coated on adhesion coating 50 on second transparency carrier 30 and be with first transparency carrier 10 on the another side of transparent conductive film 20 adhere mutually.Transparent conductive substrate of the present invention is in to finish.
Embodiment 5
Consult Fig. 6, in another embodiment of the present invention, described adhesion coating can also be coated with on the above first transparency carrier 10, can reach identical effect.At first the another side of transparent conductive film 20 is coated with last layer adhesion coating 50 on described first transparency carrier 10.Described adhesion coating 50 is made of acrylic acid, silicon and rubber, and its thickness is between 1 micron-15 microns.
Embodiment 6
With reference to figure 7, it is for described second transparency carrier 30 and described first transparency carrier, the 10 bonding generalized sections that form transparent conductive substrate.Wherein be coated on adhesion coating 50 on first transparency carrier 10 and be with second transparency carrier 30 on the another side of protective layer 40 adhere mutually, transparent conductive substrate of the present invention is in to finish.
In the present embodiment, described adhesion coating 50 has the cushion effect equally, can make formed transparent conductive substrate have splendid burnish resistance (friction, proofing) and scratch resistance (scratch, proofig).
Claims (10)
1, a kind of method that forms transparent conductive substrate, it is characterized in that: it comprises the steps:
A, provide first transparency carrier;
B, on the first surface of described first transparency carrier, form transparent conductive film;
C, provide second transparency carrier;
D, on the first surface of described second transparency carrier, form a protective layer;
E, on the second surface of described second transparency carrier, form an adhesion coating;
F, described second transparency carrier is adhered mutually with described first transparency carrier, wherein said second transparency carrier system is pasted to the second surface of described first transparency carrier with described adhesion coating.
2, the method for formation transparent conductive substrate as claimed in claim 1 is characterized in that: before forming described transparent conductive film, comprise the step that forms a bottom, wherein said bottom is with the formed silicon dioxide layer of silicomethane.
3, the method for formation transparent conductive substrate as claimed in claim 1 is characterized in that: described transparent conductive film is an indium stannum alloy oxide-film, and its thickness is between 0.01 micron to 0.5 micron.
4, the method for formation transparent conductive substrate as claimed in claim 1 is characterized in that: the thickness of described protective layer is between 0.01 micron to 15 microns.
5, the method for formation transparent conductive substrate as claimed in claim 1 is characterized in that: the thickness of described adhesion coating is between 1 micron to 15 microns.
6, a kind of method that forms transparent conductive substrate, it is characterized in that: it comprises the steps:
A, provide first transparency carrier;
B, on the first surface of described first transparency carrier, form a transparent conductive film;
C, on the second surface of described first transparency carrier, form an adhesion coating;
D, provide second transparency carrier;
E, on the first surface of described second transparency carrier, form a protective layer;
F, described first transparency carrier is adhered mutually with described second transparency carrier, wherein said first transparency carrier system is pasted to the second surface of described second transparency carrier with described adhesion coating.
7, the method for formation transparent conductive substrate as claimed in claim 6 is characterized in that: before forming described transparent conductive film, comprise the step that forms a bottom, wherein said bottom is with the formed silicon dioxide layer of silicomethane.
8, the method for formation transparent conductive substrate as claimed in claim 6 is characterized in that: described transparent conductive film is an indium stannum alloy oxide-film, and its thickness is between 0.01 micron to 0.5 micron.
9, the method for formation transparent conductive substrate as claimed in claim 6 is characterized in that: the thickness of described protective layer is between 0.01 micron to 15 microns.
10, the method for formation transparent conductive substrate as claimed in claim 6 is characterized in that: the thickness of described adhesion coating is between between 1 note of the ancient Chinese rice to 15 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133509 CN1353450A (en) | 2000-11-07 | 2000-11-07 | Method for generating electrically conducting transparent substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133509 CN1353450A (en) | 2000-11-07 | 2000-11-07 | Method for generating electrically conducting transparent substrate |
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| CN1353450A true CN1353450A (en) | 2002-06-12 |
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| CN 00133509 Pending CN1353450A (en) | 2000-11-07 | 2000-11-07 | Method for generating electrically conducting transparent substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431833C (en) * | 2002-08-09 | 2008-11-12 | 日东电工株式会社 | Surface protective film for transparent conductive substrate, and transparent conductive substrate with surface protective film |
| CN100466167C (en) * | 2007-02-05 | 2009-03-04 | 友达光电股份有限公司 | Making method of pliable active component array base board |
| CN102111964B (en) * | 2009-12-29 | 2012-10-17 | 富葵精密组件(深圳)有限公司 | Method for manufacturing circuit board |
| TWI381400B (en) * | 2007-10-22 | 2013-01-01 | Nitto Denko Corp | A transparent conductive film, a method for manufacturing the same, and a touch panel provided with the same |
| CN103035775A (en) * | 2011-09-29 | 2013-04-10 | 北儒精密股份有限公司 | Solar battery and manufacturing method thereof |
-
2000
- 2000-11-07 CN CN 00133509 patent/CN1353450A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431833C (en) * | 2002-08-09 | 2008-11-12 | 日东电工株式会社 | Surface protective film for transparent conductive substrate, and transparent conductive substrate with surface protective film |
| CN100466167C (en) * | 2007-02-05 | 2009-03-04 | 友达光电股份有限公司 | Making method of pliable active component array base board |
| TWI381400B (en) * | 2007-10-22 | 2013-01-01 | Nitto Denko Corp | A transparent conductive film, a method for manufacturing the same, and a touch panel provided with the same |
| US9428625B2 (en) | 2007-10-22 | 2016-08-30 | Nitto Denko Corporation | Transparent conductive film, method for production thereof and touch panel therewith |
| CN102111964B (en) * | 2009-12-29 | 2012-10-17 | 富葵精密组件(深圳)有限公司 | Method for manufacturing circuit board |
| CN103035775A (en) * | 2011-09-29 | 2013-04-10 | 北儒精密股份有限公司 | Solar battery and manufacturing method thereof |
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