CN1351383A - Technology for preparing blue LED chip based on gallium nitride - Google Patents
Technology for preparing blue LED chip based on gallium nitride Download PDFInfo
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- CN1351383A CN1351383A CN00131322A CN00131322A CN1351383A CN 1351383 A CN1351383 A CN 1351383A CN 00131322 A CN00131322 A CN 00131322A CN 00131322 A CN00131322 A CN 00131322A CN 1351383 A CN1351383 A CN 1351383A
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- Prior art keywords
- electrode
- gallium nitride
- evaporation
- blue led
- led chip
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Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 25
- 238000005516 engineering process Methods 0.000 title description 3
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000003466 welding Methods 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Led Devices (AREA)
Abstract
A process for preparing the chip of gallium nitride-based blue LED includes such steps as testing the epitaxial wafer, activating P-layer to form P-layer, isolated photoetching, isolated dry etching, photoetching n electrode, dry etching of n electrode area to form n mesa, generating n electrode on n layer, generating p electrode on p layer, thinning, dividing, splitting and dividing chip. Its advantages include high locating precision, high productivity and high percentage of finished products.
Description
The present invention relates to the photoelectron technology field, specifically is the manufacture method of a kind of gallium nitride (GaN) blue LED chip based (or tube core).
Light-emitting diode (LED) is a kind of electric energy to be converted into the luminescent device of luminous energy, is the light emitting devices that sends visible light, infrared light or ultraviolet light etc. when passing to forward current on semiconductor p-n junction, double heterojunction or multi-quantum pit structure.At present, the manufacturing technology of red, orange, yellow, general light-emitting diode such as green is ripe, and has realized industrialization, and how making pure green, ethereal blue light-emitting diode then is a difficult problem that perplexs the sector for a long time.
With the gallium nitride is the third generation semiconductor III-V family wide bandgap compound semiconductors material of representative, inside and outside quantum efficiency height, having characteristics such as high-luminous-efficiency, high heat conductance, high temperature resistant, radioresistance, acid and alkali-resistance, high strength and high rigidity, is state-of-the-art in the world at present semi-conducting material.Be the blue light-emitting diode of base material with the GaN material wherein, become the forward position and the focus of research in the current optoelectronic areas.Blue light-emitting diode has that volume is little, cold light source, response time short (response fast), luminous efficiency height, explosion-proof and reliable, life-span length, low pressure, power saving, plurality of advantages such as energy-conservation.
Yet, generally be at sapphire (Al owing to be used for making the wafer of blue LED chip based on gallium nitride
2O
3) to do on the backing material epitaxial growth resulting, and because of sapphire is the hard and insulation of quality, this will cause the manufacture craft of blue LED chip based on gallium nitride can not adopt the manufacture craft of common light-emitting diode chip for backlight unit.
In the manufacture craft of existing blue LED chip based on gallium nitride, after etching the n table top, generally return to the p table top earlier, carry out the making of ultra-thin transparency electrode; Then, enter into the n table top again, carry out the making of n electrode; Then, return on the p table top making pad on ultra-thin transparency electrode again.The making of n table top, p table top electrode repeatedly hockets, and directly positioning accuracy and the repetitive positioning accuracy of influence in the chip manufacturing process makes production efficiency reduce decrease in yield.
The objective of the invention is to overcome the above-mentioned deficiency of prior art, provide a kind of manufacture method of blue LED chip based on gallium nitride efficiently and the structure of chip thereof, with the production efficiency that improves described blue LED chip and the rate of finished products of chip.
Usually the process for integrally manufacturing process subdivision of light-emitting diode is: upstream (being the preparation of luminescent crystal epitaxial wafer), middle reaches (being the making of chip) and downstream (being the encapsulation of chip) three phases.Method of the present invention relates to its middle reaches stage, i.e. the making of blue LED chip based on gallium nitride.The making of blue LED chip based on gallium nitride is by a series of technical process, and its preparation-obtained epitaxial wafer in production upstream is divided into single tube core (chip).
The manufacture method of the blue LED chip based on gallium nitride that the present invention relates to, take following steps:
A, detection gallium nitride base blue light luminescent crystal epitaxial wafer carry out the activation of p type layer, form the p type electric conductor of low-resistivity;
B, successively isolate photoetching, isolate dry etching, the etching photoetching of n electrode and n electrode district dry etching, form the n table top;
C, at described n table section, carry out the photoetching of n electrode evaporation, n electrode evaporation and n electrode metal successively, on n type layer, form the n electrode;
D, change p type floor district over to, carry out the photoetching of p electrode evaporation, p electrode evaporation, p electrode metal, the photoetching of pad evaporation, pad evaporation and pad alloy successively, on p type layer, form the p electrode;
E, then with substrate thinning, scribing, disintegrating tablet divides tube core.
Further describe below in conjunction with tube core structure figure of the present invention.Fig. 1 is the structural representation of blue LED chip based on gallium nitride.As shown in Figure 1, described tube core is made of Sapphire Substrate 1, resilient coating 2, n type GaN compound semiconductor layer 3, active layer 4, p type GaNization thing semiconductor layer 5, p electrode 6 and n electrode 7.
Its manufacturing process is as indicated above, below describes in detail with regard to its main technical process.
1. the activation of P type layer
Because H also is brought into material in the process of the GaN material being carried out the doping of p type, has formed and has been subjected to master-H complex, does not provide the hole, promptly the concentration of p type conduction charge carrier is lower.At this situation, we adopt nitrogen (N
2) atmosphere and under the temperature conditions about 450 ℃, make the abundant ionization of p type dopant, decomposed by master-H complex, neutral H atom will be moved to other interstitial site or material surface among the GaN, also can form H
2Molecule effusion solid.To provide the hole to valence band in the mode that excites after acceptor center is activated, form p type electric conductor.Thereby improved the concentration of GaN material p type conduction charge carrier (hole), formed the p type electric conductor of low-resistivity, reached the requirement of making high-brightness LED.
2. photoetching technique
The purpose of photoetching will form etching or evaporation mask exactly, require to guarantee that figure is clear, have high resolution and high accuracy, its difficult point is that being coated with of photoresist echo exposure, this patent selects for use AZ1300 glue as photoresist (resist), under the condition of Hg lamp UV-irradiation, expose, select sodium phosphate (Na for use
3PO
4) and the developing liquid developing 40s that constitutes by 1: 3 proportioning of deionized water about; Like this, the gained result can reach ± precision of 0.1 μ m.
3. lithographic method
Adopt inductively coupled plasma etching method (ICP), the gas of employing is with chlorine (Cl
2) be main, by chlorine (Cl
2), methane (CH
4), the mist formed of argon gas (Ar), meet the characteristics of the physical property of GaN crystal own.In etching process, control well pressure, gas flow, power, temperature etc. these influence the key factor of etching speed so that can the speed of etching and the degree of depth accurately be controlled, prevented the erosion and owe the erosion, this is the key of etching technics.The etching condition that the related etching technics of this method is selected for use is:
Gas flow 200sccm, pressure 50mTorr, power 1800W, pairing etch rate are 400～780nm/min, its typical rate is 520nm/min.
4. electrode is made
Be included on the p type GaN compound semiconductor layer and form the p electrode and form the n electrode on n type GaN compound semiconductor layer, its process comprises evaporation and metal-stripping.After etching p table top and n table top on the GaN compound semiconductor, under the temperature conditions about 500 ℃, respectively evaporation titanium (Ti) and aluminium (Al), the alloy formation n type electrode row metal of going forward side by side is peeled off again, its final thickness should guarantee more than 50 dusts, is preferably between 0.01～5 μ m; Under the temperature conditions about 600 ℃, difference evaporation platinum (Pt), nickel (Ni) and gold (Au), alloy forms p type electrode then, its thickness is preferably between 0.005～0.2 μ m, preferably can be controlled in the scope of 0.01～0.2 μ m, carry out metal-stripping again, with the electrode that the method forms, light transmittance is greater than 70%; And contact resistance is less, can bear enough big electric current again simultaneously.
Relatively advantage is as follows for the present invention and existing manufacture craft:
The inventive method has proposed a kind of effective production process of blue LED chip based on gallium nitride, changes Become the flow process of existing manufacture craft, after etching the n table top, just produced earlier the n electrode thereon; So After, return to again the p table top, carry out the ultrathin transparent electrode and be located thereon and have with it an Ohmic contact The making of pad. Electrode and semiconductor layer firm and reliable connection, contact resistance is littler, the electrode transmits light of formation Rate is better, chip light emitting efficient height, and chip performance is stable, and long-term work is deterioration not.
Avoided n table top, p table top top electrode repeatedly positioned alternate make loaded down with trivial details so that in chip system Positioning accuracy and the repetitive positioning accuracy done in the process improve greatly, and production efficiency and the yield rate of chip advance one Step improves.
Claims (5)
1, the blue LED chip based manufacture method of a kind of gallium nitride (GaN) is characterized in that taking following steps:
A, detection gallium nitride base blue light luminescent crystal epitaxial wafer carry out the activation of p type layer, form the p type electric conductor of low-resistivity;
B, successively isolate photoetching, isolate dry etching, the etching photoetching of n electrode and n electrode district dry etching, form the n table top;
C, at described n table section, carry out the photoetching of n electrode evaporation, n electrode evaporation and n electrode metal successively, on n type layer, form the n electrode;
D, change p type floor district over to, carry out the photoetching of p electrode evaporation, p electrode evaporation, p electrode metal, pad (p pressure welding point) evaporation photoetching, pad evaporation and pad alloy successively, on p type layer, form the p electrode;
E, then with substrate thinning, scribing, disintegrating tablet divides tube core.
2, according to the manufacture method of the described blue LED chip based on gallium nitride of claim 1, it is characterized in that: described gallium nitride epitaxial wafer p type layer activation is at nitrogen (N
2) carry out under the temperature conditions of atmosphere and about 450 ℃.
3, according to the manufacture method of the described blue LED chip based on gallium nitride of claim 1, it is characterized in that: described etching technics adopts inductively coupled plasma etching method (ICP), and its etching condition is to adopt with chlorine (Cl
2) be main, by chlorine (Cl
2), methane (CH
4), the mist formed of argon gas (Ar), gas flow 200sccm, pressure 50mTorr, power 1800W, pairing etch rate are 400～780nm/min.
4, according to the manufacture method of the described blue LED chip based on gallium nitride of claim 1, it is characterized in that: the temperature of evaporating n electrode is about 500 ℃ on n type layer, deposition material is titanium (Ti) and aluminium (Al), and the thickness that alloy forms the n electrode is 0.01～5 μ m;
The temperature of evaporation p electrode is about 600 ℃ on p type layer, and deposition material is platinum (Pt), nickel (Ni) and gold (Au), and the thickness that alloy forms p type electrode is 0.005～0.2 μ m.
5, according to the manufacture method of the described blue LED chip based on gallium nitride of claim 4, it is characterized in that: the p type thickness of electrode that forms on p type layer is 0.01～0.2 μ m.。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001313223A CN1163977C (en) | 2000-10-26 | 2000-10-26 | Technology for preparing blue LED chip based on gallium nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001313223A CN1163977C (en) | 2000-10-26 | 2000-10-26 | Technology for preparing blue LED chip based on gallium nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1351383A true CN1351383A (en) | 2002-05-29 |
| CN1163977C CN1163977C (en) | 2004-08-25 |
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ID=4594626
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001313223A Expired - Fee Related CN1163977C (en) | 2000-10-26 | 2000-10-26 | Technology for preparing blue LED chip based on gallium nitride |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349305C (en) * | 2003-12-04 | 2007-11-14 | 中国科学院半导体研究所 | Method of manufacturing high-power gallium nitride base LED |
| CN100352067C (en) * | 2003-09-23 | 2007-11-28 | 深圳市方大国科光电技术有限公司 | Reduction method of sapphire substrate |
| CN100383987C (en) * | 2003-09-10 | 2008-04-23 | 深圳市方大国科光电技术有限公司 | Method for manufacturing sapphire substrate LED chip electrode |
| CN100435360C (en) * | 2004-12-27 | 2008-11-19 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| CN101916769A (en) * | 2010-05-19 | 2010-12-15 | 武汉华灿光电有限公司 | Antistatic gallium nitride based luminescent device and manufacturing method thereof |
| US7863747B2 (en) | 2007-12-21 | 2011-01-04 | Dongbu Hitek Co., Ltd. | Semiconductor chip, method of fabricating the same and semiconductor chip stack package |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| CN102800779A (en) * | 2011-05-27 | 2012-11-28 | 广东银雨芯片半导体有限公司 | Light-emitting diode (LED) wafer for graphene electrode and manufacturing method for LED wafer |
| CN104795313A (en) * | 2009-08-26 | 2015-07-22 | 首尔伟傲世有限公司 | Method of fabricating semiconductor substrate and method of fabricating light emitting device |
| CN109997235A (en) * | 2016-11-24 | 2019-07-09 | 日机装株式会社 | The manufacturing method of semiconductor light-emitting elements |
-
2000
- 2000-10-26 CN CNB001313223A patent/CN1163977C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100383987C (en) * | 2003-09-10 | 2008-04-23 | 深圳市方大国科光电技术有限公司 | Method for manufacturing sapphire substrate LED chip electrode |
| CN100352067C (en) * | 2003-09-23 | 2007-11-28 | 深圳市方大国科光电技术有限公司 | Reduction method of sapphire substrate |
| CN100349305C (en) * | 2003-12-04 | 2007-11-14 | 中国科学院半导体研究所 | Method of manufacturing high-power gallium nitride base LED |
| CN100435360C (en) * | 2004-12-27 | 2008-11-19 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| US7863747B2 (en) | 2007-12-21 | 2011-01-04 | Dongbu Hitek Co., Ltd. | Semiconductor chip, method of fabricating the same and semiconductor chip stack package |
| CN104795313A (en) * | 2009-08-26 | 2015-07-22 | 首尔伟傲世有限公司 | Method of fabricating semiconductor substrate and method of fabricating light emitting device |
| CN101916769A (en) * | 2010-05-19 | 2010-12-15 | 武汉华灿光电有限公司 | Antistatic gallium nitride based luminescent device and manufacturing method thereof |
| CN102800779A (en) * | 2011-05-27 | 2012-11-28 | 广东银雨芯片半导体有限公司 | Light-emitting diode (LED) wafer for graphene electrode and manufacturing method for LED wafer |
| CN109997235A (en) * | 2016-11-24 | 2019-07-09 | 日机装株式会社 | The manufacturing method of semiconductor light-emitting elements |
| CN109997235B (en) * | 2016-11-24 | 2021-08-20 | 日机装株式会社 | Method for manufacturing semiconductor light emitting element |
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| Publication number | Publication date |
|---|---|
| CN1163977C (en) | 2004-08-25 |
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