CN1347077A - 差异磁轭型读磁头及其制造方法 - Google Patents
差异磁轭型读磁头及其制造方法 Download PDFInfo
- Publication number
- CN1347077A CN1347077A CN01140997A CN01140997A CN1347077A CN 1347077 A CN1347077 A CN 1347077A CN 01140997 A CN01140997 A CN 01140997A CN 01140997 A CN01140997 A CN 01140997A CN 1347077 A CN1347077 A CN 1347077A
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- layer
- sensor
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- layer structure
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- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 218
- 238000000034 method Methods 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims description 355
- 230000005307 ferromagnetism Effects 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 210000001503 joint Anatomy 0.000 claims description 17
- 238000009987 spinning Methods 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- 230000000452 restraining effect Effects 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000007885 magnetic separation Methods 0.000 claims 3
- 238000000926 separation method Methods 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000005303 antiferromagnetism Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 229910000616 Ferromanganese Inorganic materials 0.000 description 2
- 229910000863 Ferronickel Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
- G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
Abstract
Description
Claims (41)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/686,191 | 2000-10-10 | ||
US09/686,191 US6567244B1 (en) | 2000-10-10 | 2000-10-10 | Differential yoke type read head |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1347077A true CN1347077A (zh) | 2002-05-01 |
CN1211783C CN1211783C (zh) | 2005-07-20 |
Family
ID=24755299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011409975A Expired - Fee Related CN1211783C (zh) | 2000-10-10 | 2001-10-10 | 差异磁轭型读磁头及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6567244B1 (zh) |
JP (1) | JP2002163807A (zh) |
KR (1) | KR100413024B1 (zh) |
CN (1) | CN1211783C (zh) |
SG (1) | SG100763A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100722334B1 (ko) * | 1999-03-01 | 2007-05-28 | 후지쯔 가부시끼가이샤 | 자기 센서 및 강자성 터널 접합 소자 |
US6785100B2 (en) * | 2000-04-10 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device |
JP3760095B2 (ja) | 2000-12-14 | 2006-03-29 | 株式会社日立グローバルストレージテクノロジーズ | 2素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置 |
US6992869B2 (en) * | 2001-02-06 | 2006-01-31 | Yamaha Corporation | Magnetic resistance device |
JP2002269706A (ja) * | 2001-03-14 | 2002-09-20 | Sony Corp | マルチチャンネル磁気抵抗効果型磁気ヘッド |
JP2002329304A (ja) * | 2001-04-27 | 2002-11-15 | Mitsumi Electric Co Ltd | トンネル磁気抵抗効果型磁気ヘッド |
JP3648504B2 (ja) | 2002-09-06 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気再生装置 |
US7324310B2 (en) * | 2004-04-30 | 2008-01-29 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5493467A (en) * | 1994-12-27 | 1996-02-20 | International Business Machines Corporation | Yoke spin valve MR read head |
US6256863B1 (en) * | 1996-03-12 | 2001-07-10 | Kabushiki Kaisha Toshiba | Yoke type magnetoresistance head and manufacturing method of the same |
SG72760A1 (en) | 1996-09-19 | 2000-05-23 | Tdk Corp | Ferromagnetic tunnel junction magnetoresistive element and magnetic head |
US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
US5805391A (en) * | 1996-10-28 | 1998-09-08 | International Business Machines Corporation | Write head with recessed stitched yoke on a planar portion of an insulation layer defining zero throat height |
US5757056A (en) | 1996-11-12 | 1998-05-26 | University Of Delaware | Multiple magnetic tunnel structures |
US5768071A (en) * | 1997-06-19 | 1998-06-16 | International Business Machines Corporation | Spin valve sensor with improved magnetic stability of the pinned layer |
US5898548A (en) | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Shielded magnetic tunnel junction magnetoresistive read head |
US5901018A (en) | 1997-10-24 | 1999-05-04 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide |
JP2001507806A (ja) * | 1997-10-29 | 2001-06-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | スピン−トンネル接合から成る磁界センサー |
US6278589B1 (en) * | 1999-03-30 | 2001-08-21 | International Business Machines Corporation | Dual GMR sensor with a single AFM layer |
JP3592140B2 (ja) * | 1999-07-02 | 2004-11-24 | Tdk株式会社 | トンネル磁気抵抗効果型ヘッド |
US6473275B1 (en) * | 2000-06-06 | 2002-10-29 | International Business Machines Corporation | Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
US6430014B1 (en) * | 2000-08-09 | 2002-08-06 | International Business Machines Corporation | Properly biased AP pinned spin valve sensor with a metallic pinning layer and no read gap offset |
-
2000
- 2000-10-10 US US09/686,191 patent/US6567244B1/en not_active Expired - Fee Related
-
2001
- 2001-09-28 KR KR10-2001-0060327A patent/KR100413024B1/ko not_active IP Right Cessation
- 2001-10-08 SG SG200106195A patent/SG100763A1/en unknown
- 2001-10-09 JP JP2001311156A patent/JP2002163807A/ja active Pending
- 2001-10-10 CN CNB011409975A patent/CN1211783C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1211783C (zh) | 2005-07-20 |
JP2002163807A (ja) | 2002-06-07 |
SG100763A1 (en) | 2003-12-26 |
US6567244B1 (en) | 2003-05-20 |
KR100413024B1 (ko) | 2003-12-31 |
KR20020028788A (ko) | 2002-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI GST Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINE CORP. Effective date: 20040106 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20040106 Address after: Amsterdam Applicant after: Hitachi Global Storage Tech Address before: American New York Applicant before: International Business Machines Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050720 Termination date: 20091110 |