CN1341969A - 微型高效宽光谱换能器及其制备方法 - Google Patents
微型高效宽光谱换能器及其制备方法 Download PDFInfo
- Publication number
- CN1341969A CN1341969A CN01134053A CN01134053A CN1341969A CN 1341969 A CN1341969 A CN 1341969A CN 01134053 A CN01134053 A CN 01134053A CN 01134053 A CN01134053 A CN 01134053A CN 1341969 A CN1341969 A CN 1341969A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 230000001360 synchronised effect Effects 0.000 claims description 8
- 229910021478 group 5 element Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 230000008595 infiltration Effects 0.000 abstract 2
- 238000001764 infiltration Methods 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000008485 antagonism Effects 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000000031 electric organ Anatomy 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
参数 | 短路电流 | 暗电流 | 开路电压 | 灵敏度 | ||||
100001x | 181mA* | 3.6mA | 2.5μA* | 0.4μA | 1.53V* | 1.97V | 181mA* | 3.6mA |
200001x | 383mA* | 7.5mA | 2.5μA* | 0.4μA | 1.51V* | 1.98V | 383mA* | 7.5mA |
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011340533A CN1157800C (zh) | 2001-10-17 | 2001-10-17 | 微型高效宽光谱换能器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011340533A CN1157800C (zh) | 2001-10-17 | 2001-10-17 | 微型高效宽光谱换能器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1341969A true CN1341969A (zh) | 2002-03-27 |
CN1157800C CN1157800C (zh) | 2004-07-14 |
Family
ID=4672189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011340533A Expired - Fee Related CN1157800C (zh) | 2001-10-17 | 2001-10-17 | 微型高效宽光谱换能器及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1157800C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008031250A1 (fr) * | 2006-08-14 | 2008-03-20 | Jiangsu Sunshine Solar Electric Power Co., Ltd | Cellule solaire de mémoire à puits quantiques |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101399292B (zh) * | 2008-11-12 | 2011-12-07 | 清华大学 | 一种用于光伏发电的高温热辐射集成器件 |
-
2001
- 2001-10-17 CN CNB011340533A patent/CN1157800C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008031250A1 (fr) * | 2006-08-14 | 2008-03-20 | Jiangsu Sunshine Solar Electric Power Co., Ltd | Cellule solaire de mémoire à puits quantiques |
CN101167192B (zh) * | 2006-08-14 | 2011-07-20 | 陈钟谋 | 量子库太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1157800C (zh) | 2004-07-14 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BEIJING ZONG MOU CHENG XIN TECHNOLOGY DEVELOPMENT Free format text: FORMER OWNER: CHEN ZHONGMOU Effective date: 20051104 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20051104 Address after: 100029, room 5, building 33, 032 Xin Hui West Street, Beijing, Chaoyang District Patentee after: Beijing public seeking into new technology development Co., Ltd. Address before: 210016 55, 524 East Zhongshan Road, Jiangsu, Nanjing Patentee before: Chen Zhongmou |
|
ASS | Succession or assignment of patent right |
Owner name: CHEN ZHONGMOU Free format text: FORMER OWNER: BEIJING ZHONGMOU CHENGXIN TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20131031 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 210016 NANJING, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20131031 Address after: 210016 55, 524 East Zhongshan Road, Jiangsu, Nanjing Patentee after: Chen Zhongmou Address before: 100029, room 5, building 33, 032 Xin Hui West Street, Beijing, Chaoyang District Patentee before: Beijing public seeking into new technology development Co., Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040714 Termination date: 20131017 |