CN1332421C - Method for cleaning semiconductor process equipment - Google Patents
Method for cleaning semiconductor process equipment Download PDFInfo
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- CN1332421C CN1332421C CNB2003101234200A CN200310123420A CN1332421C CN 1332421 C CN1332421 C CN 1332421C CN B2003101234200 A CNB2003101234200 A CN B2003101234200A CN 200310123420 A CN200310123420 A CN 200310123420A CN 1332421 C CN1332421 C CN 1332421C
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- pipeline
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Abstract
The present invention relates to a method for cleaning a semiconductor producing process device, wherein the present invention mainly uses a cleaning method for replacing a traditional conducting gas by a liquid chemical with high purity, and the cleaning mode of a semiconductor producing process device or a pipe line is carried out; the selected liquid chemical has high purity and high volatility, and has the performance of optimal intersolubility with a raw material used in the operation of a semiconductor producing process. Therefore, the cleaning degree of the pipe line is enhanced; simultaneously, the time needed by a cleaning process is largely shortened, and the produce quality and the yield of the semiconductor producing process are increased.
Description
Technical field
The present invention is a kind of clean method of semi-conductor processing equipment, and is particularly a kind of with residual chemical, waste gas and impurity in the high-purity liquid chemicals removing pipeline, and can make semiconductor pipeline clean-up performance improve and shorten the sweep-out method in processing time.
Background technology
In the processing procedure of semiconductor subassembly or microfabrication, mikey all is to calculate with micron, therefore micronic dust particle is if attach on the wafer of making semiconductor subassembly, just might have influence on the pattern of the precision traverse layout on it, the serious consequence that causes electrical short circuit or open circuit, so all semi-conductor processing equipments, requirement to lustration class is also high especially, with recognised standard class, the class10 representative on average has only 10 in the dust of particle diameter more than 0.5 micron in the space of the cubic feet per Foot of unit.
Yet, owing to often need replace the raw material bottle in the processing procedure or do the replacing of pipeline, therefore after process apparatus is opened, air can enter pipeline and pollute, allow supply of raw material purity descend, also or air form particulate with raw material reaction, cause the fraction defective raising of semiconductor article, therefore must after changing the raw material bottle or changing pipeline, carry out clean to process apparatus and pipeline.
With Fig. 5 is the example explanation, it is the equipment flowsheet of semiconductor wafer manufacturing, it mainly is the apparatus for feeding that includes a chemical vapour deposition reaction cavity 10, many groups, as electricity slurry gas source a, carrier gas body source b, removing gas source c and stock bottle or the like, wherein remove gas source c lead to chemical vapour deposition reaction cavity 10, and carrier gas body source b between, be equiped with specially in order to store the ampoule bottle 20 (ampoule) of high-purity chemical product, for example employed four couples of methyl ammonia titaniums (TDMAT, (Ti[NCH in chemical vapour deposition (CVD)
32]
4Tetrakis-Dimethylamino-Titanium), put in the ampoule bottle 20 that is formed on this kind particular design to keep the degree of purity and the stability of chemicals, yet, when the chemicals in the ampoule bottle 20 is used up, ampoule bottle 20 will be replaced, because pipeline presents open state when replacing, therefore air can enter in the process system, and TDMAT can produce the microparticle of titanium oxide when running into airborne aqueous vapor, cause the pollution on the processing procedure, therefore the operation that can clean pipeline before new ampoule bottle 20 is enabled shown in the arrow among the figure, is removed gas source c nitrogen (N is provided
2) or helium (He) be filled in the pipeline driving away air to exhaust-gas treatment groove d (foreline), and before discharge with a heating plate e localized heating pipeline, increase and remove effect.
Wherein, removing gas carries out with lower-cost nitrogen mostly; and be divided into all pipelines in the different phase cleaning processing procedure; yet remove pipeline in the mode that nitrogen injects, mainly be diluent air and residual TDMAT and derive, make in the pipeline air and TDMAT content gradually rare; level off to zero; therefore but it is very slow so to remove effect, and the time that the pipeline cleaning procedure in the whole processing procedure often need 3-4 days just can finish, and expends the idle cost of many times and manpower consumption.
Summary of the invention
The present inventor still has its shortcoming to exist in view of the aforementioned clean method of commonly using semi-conductor processing equipment on reality is used and conceives again, mainly be the reset mode of utilizing highly purified liquid chemicals replacement gas, to reach the goal of the invention of rapid cleaning semiconductor pipeline.
Main purpose of the present invention is for a kind of clean method of semi-conductor processing equipment is provided, and it can foreshorten to the time in the processing procedure in several hours and finish, to reduce the waste of time cost.
In order to reach aforesaid goal of the invention, the technological means that the present invention used is the clean method that is to provide a kind of semi-conductor processing equipment, its method mainly is to select a liquid chemicals that has high-purity, high volatile volatile, can have the character of splendid intersolubility with the former material that uses in the process apparatus simultaneously for use, this liquid chemicals is imported in the pipeline of semiconductor processing procedure to remove the pollutant in this pipeline.
The present invention can utilize the intersolubility of this liquid chemicals and pipeline Central Plains material, allow remaining former material be dissolved in the liquid chemicals, avoid producing compound particles and pollute processing procedure, and high volatile volatile character, if further cooperate gas flow, easier dry pipeline to be so that processing procedure can be activated again fast, to reach with the pipeline in the semi-conductor processing equipment fast and the effect of effective cleaning.
Description of drawings
Fig. 1 is that compounding practice nitrogen of the present invention imports the device allocation plan of implementing.
Fig. 2 is the device allocation plan that operation of the present invention imports the high-purity liquid chemicals.
Fig. 3 is the device allocation plan that operation simultaneously of the present invention imports high-purity liquid chemicals and nitrogen.
Fig. 4 is the device allocation plan that another operation of the present invention imports high-purity liquid chemicals and nitrogen.
Fig. 5 is that the operation of commonly using imports the device allocation plan that gas cleans.
In the accompanying drawing:
10--chemical vapour deposition reaction cavity 20--ampoule bottle
The 30--storage tank
A--electricity slurry gas source b--carrier gas body source
C--removes gas source d--exhaust-gas treatment groove
The e--heating plate
EV18, EV12, EV13, EV15, EV16, EV17, MV1, EV19, EV11--valve
Embodiment
The present invention is a kind of clean method of semi-conductor processing equipment, it mainly is to utilize high volatile volatile, and the high-purity chemical product that can have the splendid character of dissolving each other with the former material manipulated in the manufacture of semiconductor, import in the pipeline with the form of liquid state, reach the effect of removing air and impurity in the pipeline.
Please refer to shown in Figure 1, with the semi-conductor processing equipment figure that is carried in the prior art be example, it mainly is to include a chemical vapour deposition reaction cavity 10, the apparatus for feeding of many groups, as electricity slurry gas source a, carrier gas body source b, remove gas source c and stock bottle or the like, wherein removing gas source c towards chemical vapour deposition reaction cavity Room 10, and between the carrier gas body source b, be equiped with specially in order to store the ampoule bottle 20 (ampoule) of high-purity chemical product, use the clean method of operation semi-conductor processing equipment of the present invention, it can feed the TDMAT that remains in the pipeline that opposes in the pipeline with the nitrogen of removing gas source c in advance and do preliminary removing.
Then as shown in Figure 2, one storage tank 30 that the high-purity chemical product liquid of above-mentioned character is housed is communicated on the pipeline, when the cleaning pipeline, import in the pipeline, in this processing procedure, select for use to have high volatile volatile, the liquid of the n-hexane (Hexane) of splendid intersolubility as cleaning is arranged with TDMAT.
When n-hexane is present in the pipeline with liquid form, can clean the impurity in the pipeline, but not the clean method of known semi-conductor processing equipment, with gas clean-up is to finish gradually in the dilution mode to remove air and residual TDMAT, therefore can shorten the time of cleaning, in addition, the high-volatile character of n-hexane allows the easy drying of pipeline be beneficial to the activation again of processing procedure; And good with the TDMAT intersolubility, can allow originally remaining TDMAT is dissolved in the n-hexane easily in the pipeline, avoid the particle pollution processing procedure that combine generation titanium dioxide with water in air gas, and along with hexane solution is expelled to exhaust-gas treatment groove d (foreline).
The clean method of semi-conductor processing equipment of the present invention, can further cooperate the gas clean method of commonly using to use, as shown in Figure 3, open and remove gas source c to path valve and evacuating valve (EV12 between the exhaust-gas treatment groove d, EV13, EV15, EV16, EV19), and allow liquid n-hexane feed the removing residue that flows in the pipeline, and with the nitrogen of removing gas source c as promoting gas Open valve EV18, with nitrogen liquid n-hexane is promoted to be expelled to exhaust-gas treatment groove d, quicken the pipeline cleaning speed.
In addition, identical and the change operation aspect in addition of the same as above-mentioned method principle of the pipeline in other stage cleaning, Figure 4 shows that example, can be of the present invention near the high-purity chemical product cleaning ampoule 20 pipeline highway section, cooperate nitrogen treatment simultaneously, open another depot siding path valve EV11, and open evacuating valve EV19 equally, EV12 is with the pipeline at nitrogen circulation cleaning ampoule 20 rears.
From the aforesaid operations method as can be known, because the high-purity liquid chemicals is to clean pipeline with the form of liquid state, has preferable clean effect than commonly using simple mode with gas communication, and the former material intersolubility that flows in itself and the pipeline is good, can allow originally remaining former material is dissolved in the high-purity liquid chemicals easily in the pipeline, avoid producing compound particles and pollute processing procedure, and along with the high-purity liquid chemicals is discharged, its high volatile volatile character in addition, if further cooperate gas flowing in pipeline, allow the easier drying of pipeline so that processing procedure can be activated again fast, with in the script manufacture of semiconductor must 3-4 days cleaning time foreshorten to 3 hours, to reduce the cost of semiconductor operation.
In sum, the clean method of semi-conductor processing equipment of the present invention really can be effectively and the rapid cleaning line equipment, reduction time and the idle cost of manpower consumption, to improve the usefulness of manufacture of semiconductor, increase production capacity and promote product quality, do not see simultaneously in the semiconductor operation flow process now, with the application for a patent for invention target of novelty, practicality and industry applications, so mere formality proposes patent application.
Claims (4)
1, a kind of clean method of semi-conductor processing equipment, it is characterized in that, it mainly is to select for use one to have high-purity, high volatile volatile, the liquid chemicals that can have the character of splendid intersolubility with the former material that uses in the process apparatus simultaneously, this liquid chemicals is imported one be used for the pipeline of manufacture of semiconductor to remove the pollutant in this pipeline, before this liquid chemicals imports pipeline, import and remove the removing in advance of gas do, when this liquid chemicals imports pipeline, import simultaneously and remove gas to strengthen removing, after this liquid chemicals imports pipeline, import and promote gas reinforcement removing and air-dry pipeline.
2, the clean method of semi-conductor processing equipment as claimed in claim 1 is characterized in that, wherein this former material is four couples of methyl ammonia titanium TDMAT; The high-purity liquid chemicals that this cooperation is selected for use is a n-hexane.
3, the clean method of semi-conductor processing equipment as claimed in claim 1 or 2 is characterized in that, wherein this removing gas is nitrogen.
4, the clean method of semi-conductor processing equipment as claimed in claim 1 or 2 is characterized in that, wherein this promotion gas is helium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234200A CN1332421C (en) | 2003-12-26 | 2003-12-26 | Method for cleaning semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234200A CN1332421C (en) | 2003-12-26 | 2003-12-26 | Method for cleaning semiconductor process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1635609A CN1635609A (en) | 2005-07-06 |
| CN1332421C true CN1332421C (en) | 2007-08-15 |
Family
ID=34844780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101234200A Expired - Fee Related CN1332421C (en) | 2003-12-26 | 2003-12-26 | Method for cleaning semiconductor process equipment |
Country Status (1)
| Country | Link |
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| CN (1) | CN1332421C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101479054B (en) * | 2006-08-03 | 2010-09-01 | 和舰科技(苏州)有限公司 | Automatic purging device for purging the pipeline of a photoresist coating and developing apparatus |
| JP7129261B2 (en) * | 2018-07-27 | 2022-09-01 | キオクシア株式会社 | test equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1152627A (en) * | 1995-09-20 | 1997-06-25 | Memc电子材料有限公司 | Method for regulating barrel-shape reactor cleaning system |
| CN1184860A (en) * | 1996-10-02 | 1998-06-17 | 现代电子产业株式会社 | Metal organic chemical vapor deposition apparatus and deposition method |
| CN1215764A (en) * | 1997-10-29 | 1999-05-05 | 三星电子株式会社 | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method |
| JPH11219908A (en) * | 1998-02-03 | 1999-08-10 | Kokusai Electric Co Ltd | Substrate processor and method therefor |
| US6539953B2 (en) * | 2001-05-10 | 2003-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for cleaning a heater bellow in a chemical vapor deposition chamber |
-
2003
- 2003-12-26 CN CNB2003101234200A patent/CN1332421C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1152627A (en) * | 1995-09-20 | 1997-06-25 | Memc电子材料有限公司 | Method for regulating barrel-shape reactor cleaning system |
| CN1184860A (en) * | 1996-10-02 | 1998-06-17 | 现代电子产业株式会社 | Metal organic chemical vapor deposition apparatus and deposition method |
| CN1215764A (en) * | 1997-10-29 | 1999-05-05 | 三星电子株式会社 | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method |
| JPH11219908A (en) * | 1998-02-03 | 1999-08-10 | Kokusai Electric Co Ltd | Substrate processor and method therefor |
| US6539953B2 (en) * | 2001-05-10 | 2003-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for cleaning a heater bellow in a chemical vapor deposition chamber |
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| Publication number | Publication date |
|---|---|
| CN1635609A (en) | 2005-07-06 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070815 Termination date: 20161226 |