CN1331409A - Photoelectric sensor and its making method - Google Patents
Photoelectric sensor and its making method Download PDFInfo
- Publication number
- CN1331409A CN1331409A CN00109755A CN00109755A CN1331409A CN 1331409 A CN1331409 A CN 1331409A CN 00109755 A CN00109755 A CN 00109755A CN 00109755 A CN00109755 A CN 00109755A CN 1331409 A CN1331409 A CN 1331409A
- Authority
- CN
- China
- Prior art keywords
- photoelectric sensor
- transmitting set
- optical transmitting
- optical
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
A photoelectric sensor using planar LED as light emitter features that the said light emitter is directly fixed to the front surface of a package containing light receiver in such manner that it is fixed at the longtiduinally extended position of the said light receiver. As a result, the light from LED can be immidiately recived by light receiver after it passes through substrate and package. Its advantages include no need of connecting wires and large receiving area of light receiver.
Description
The invention provides a kind of photoelectric sensor and preparation method thereof, refer to that especially a kind of is the photoelectric sensor of optical transmitting set with the plane light emitting diode.
Photoelectric sensor, as photoelectrical coupler (Photo Coupler), photoelectricity perceptron, photoelectric detector etc., because have with light is the photosignal transfer function of media, so be widely used in occasions such as computerized control system, optical-fibre communications, mouse and controller, finish the transmission of data or the isolation of coupling and device; Along with information-based and networked development, the importance of photoelectric sensor grows with each passing day, the technical progress of this product is extremely important, as No. 254484 Taiwan patent announcement by Philip electricity bubble " photoelectrical coupler " that factory proposed and No. 289804 Taiwan patent announcement by the disclosure that correlation technique is all arranged in " optical coupling device " that Motorola Inc. proposed.
Fig. 1 and Fig. 2 are the vertical view and the A-A sectional elevation of general existing photoelectric sensor structure.Photoelectric sensor, as photo-coupler, the main signal coupler of being formed by an optical transmitting set (as LED) 13 and an optical receiver 15 (as optical diode PD), both are separately fixed on two lead frames that separate 139 (privates frame), 159 (first lead frames), wherein LED13 is connected on the 6th lead frame 137 by a connection lead 135, and positive and negative two electrodes of PD15 then connect lead 153,155 by one respectively and are connected to second lead frame 151 and privates frame 157; For avoiding signal wire and connect the interference that lead produces when working, utilize the encapsulated member 17 of a semisphere and closed shell 11 to cover LED13, PD15, reach all connection leads 153,155,135.When LED13 produced transmitting illuminant, its light source will be according to PD15 place (shown in dotted arrow), and PD15 reception light signal generation telecom communication signal is so finished the transmitting effect of photoelectric sensor.
In the above-mentioned photoelectric sensor, PD15 can only obtain the reflected light from light signal that LED13 produces, and its light intensity is relative with being quick on the draw property to be reduced.
Second kind of photoelectric sensor as shown in Figure 3, its optical transmitting set (LED) 23 utilizes the variation face of privates frame 239 to bring up to first lead frame, 259 lip-deep optical receivers (PD), 25 longitudinal extension directions, enlarge the light area of PD25, avoided the shortcoming of first kind of photoelectric sensor like this.
Second kind of photoelectric sensor because the distance between LED25 and the PD23 is too approaching, lost pressure withstanding degree and insulativity and mutual interference mutually easily at LED25 and the isolated materials such as encapsulated member between the PD23; Otherwise if the hypertelorism between LED25 and the PD23, it is long and cause sensitivity to reduce that optical path length takes place again easily.So it is very important that the grasp of encapsulated member thickness becomes, and existing technology is difficult to realize.In addition, approaching by what distance, and the isolated material of encapsulated member is to lay at PD15 and LED13 could form after putting in place, so positive stop of its connection lead 235,255 is very difficult.
Fundamental purpose of the present invention provides a kind of photoelectric sensor and preparation method thereof, utilize positive and negative two electrodes of plane light emitting diode in conplane characteristic, be coated with the encapsulated member front surface of optical receiver in the plane light emitting diode directly is fixed on, like this, the light source that light emitting diode produced will accurately and on a large scale be absorbed by optical receiver.The being quick on the draw property and the accuracy of photoelectric sensor are improved.
Secondary objective of the present invention provides a kind of photoelectric sensor and preparation method thereof, utilizes encapsulated member that optical receiver and connection lead thereof are covered before placing optical transmitting set in advance, makes the chance that lead does not have short circuit that is connected of optical transmitting set and optical receiver.
Another purpose of the present invention provides a kind of photoelectric sensor and preparation method thereof, and the fixing of its optical transmitting set puts in place and control highly easily easily, and the complicacy of assembling is minimized.
Another purpose of the present invention provides a kind of photoelectric sensor and preparation method thereof, the height of its encapsulated member can be adjusted according to the reach of designed transmitting illuminant, with the use range of choice of expansion photoelectric sensor, and the complexity of reduction product design.
The object of the present invention is achieved like this:
A kind of photoelectric sensor, it comprises: at least one optical receiver, each optical receiver are fixed on one first lead frame, and positive and negative two electrodes of this optical receiver connect lead with one respectively and are connected on corresponding second lead frame and the privates frame; One is filled in the encapsulated member around this optical receiver; One optical transmitting set, this optical transmitting set is fixed on the front surface of this encapsulated member, positive and negative two electrodes of optical transmitting set connect lead with one respectively and are connected on corresponding the 5th lead frame and the 6th lead frame, and the light at the optical transmitting set back side sees through encapsulated member and received by optical receiver.
The position at above-mentioned optical transmitting set place is positioned at the vertically vertical extended spot of optical receiver; This optical transmitting set is positive and negative two electrodes plane light emitting diodes at grade.Above-mentioned encapsulated member is a material that allows spectral wavelength that optical transmitting set sent pass through; It includes a seal casinghousing, and it covers the part support body of optical receiver, encapsulated member, optical transmitting set and all lead frames.Above-mentioned second lead frame and privates frame are positioned at seal casinghousing one side jointly, and the 5th lead frame and the 6th lead frame then are positioned at the opposite side of seal casinghousing; The thickness of above-mentioned encapsulated member and optical transmitting set distribution of light sources scope linear dependence; This encapsulated member is the polymerizable monomer material.Above-mentioned encapsulated member comprises one second encapsulated member, and the sealing housing is for covering the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames; This encapsulated member also can be a layer that is installed with in the optical transmitting set bottom side, and it directly is fixed on the front surface of optical receiver together with optical transmitting set; The above-mentioned layer that is installed with is one to have the material of adhesion characteristic; This encapsulated member is one to have the layer that is installed with of adhesion characteristic, and its bottom is secured at the front surface of optical receiver, and top layer is adhered to the bottom of this optical transmitting set; This is installed with layer is a material that allows spectral wavelength that this optical transmitting set sent pass through; This first lead frame also can be one of second lead frame or privates frame; This optical receiver also can be directly connected to IC circuit, chipset, pcb board, microprocessor or its composite set; Each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or composite set.
Above-mentioned encapsulated member also can directly cover all connection leads that are connected between second lead frame, the privates frame.
It comprises the following steps:
(a) optical receiver is fixed on first lead frame, and positive and negative two electrodes of optical receiver are connected on corresponding second lead frame and the privates frame with a connection lead respectively;
(b) around optical receiver and this connection lead, form an encapsulated member;
(c) optical transmitting set is fixed on the front surface of encapsulated member;
(d) positive and negative two electrodes with optical transmitting set are connected on corresponding the 5th lead frame and the 6th lead frame with a connection lead respectively.
Employed optical transmitting set is positive and negative two electrodes plane light emitting diodes at grade in the above-mentioned steps (c); The light source scope linear dependence of the height of employed encapsulated member and optical transmitting set projection in the step (b); Step (d) can also comprise the following steps: to utilize a seal casinghousing that the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames is covered afterwards; Employed encapsulated member is the material that a spectral wavelength that optical transmitting set is sent passes through in the step (b); The position of institute's fixed light transmitter should be positioned at the vertically vertical extended spot of optical receiver in the step (c); Step (d) can also comprise the following steps: to form one second encapsulated member afterwards, and it covers this optical receiver, is installed with the part support body of layer, optical transmitting set and all lead frames; Employed each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or composite set in step (a) and the step (d).
A kind of manufacture method of photoelectric sensor, it mainly comprises the following steps:
(a) optical receiver is fixed on first lead frame;
(b) prepare a bottom side one optical transmitting set that is installed with layer is arranged;
(c) this is installed with the front surface of layer together with the direct fixed light receiver of optical transmitting set;
(d) positive and negative two electrodes with optical transmitting set are connected on corresponding the 5th lead frame and the 6th lead frame with a connection lead respectively, and positive and negative two electrodes of optical receiving set are connected on corresponding second lead frame and the privates frame with a connection lead respectively.
Employed optical transmitting set is a plane light emitting diode in the above-mentioned steps (b); Step (d) can also comprise the following steps: to utilize a seal casinghousing that the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames is covered afterwards; The layer that is installed with in the step (b) is one to have the material of adhesion characteristic, and can directly paste between optical transmitting set and the optical receiver; Step (b) and step (c) also can be the following steps: (b) bottom that is installed with layer of tool adhesion characteristic is adhered to this light and connects the top layer of penetrating device; (c) optical transmitting set is adhered to this front surface that is installed with layer; The employed layer that is installed with is a material that allows spectral wavelength that this optical transmitting set sent pass through in the step (b); The employed height of layer and the light source scope linear dependence of optical transmitting set projection of being installed with in the step (b); Can also comprise the following steps: between step (d) and the step (e) that one second encapsulated member covers this optical receiver, is installed with the part support body of layer, optical transmitting set and all lead frames; Employed each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or component devices in step (a) and the step (d).
The invention provides a kind of photoelectric sensor and preparation method thereof, it utilizes positive and negative two electrodes of plane light emitting diode to be positioned at conplane characteristic, this optical transmitting set directly is fixed on the encapsulated member front surface that is coated with optical receiver in, and optical transmitting set is fixed on the longitudinal extension place of optical receiver, when optical transmitting set is luminous, the light source at its back side penetrates substrate and encapsulated member and is received by the front of optical receiver nearby, mutual short circuit when the present invention has not only avoided lead to connect, and increased the light-receiving area of optical receiver.
The present invention is by changing salty survey device of kind photoelectricity in the past and preparation method thereof, make this photoelectric sensor can utilize the plane light emitting diode to be optical transmitting set, avoid easy problem of short-circuit between the connection lead, increased the light-receiving area of optical receiver effectively.
The present invention is described in further detail with each specific embodiments below in conjunction with accompanying drawing:
Fig. 1 is the structure vertical view of existing photoelectric sensor;
Fig. 2 is the photoelectric sensor structure cutaway view of A-A tangent plane as shown in Figure 1;
Fig. 3 is the structure cutaway view of second kind of existing photoelectric sensor;
Fig. 4 to Fig. 8 is each manufacturing step structure cutaway view of a preferred embodiment of the present invention;
Fig. 9 is the structure vertical view of photoelectric sensor of the present invention;
Figure 10 is the local enlarged diagram of the B-B tangent plane of embodiment as shown in Figure 9;
Figure 11 is the structure cutaway view of further embodiment of this invention;
Figure 12 to Figure 16 is each manufacturing step structure cutaway view of further embodiment of this invention;
Figure 17 is further embodiment of this invention schematic cross-section.
As Fig. 4 and shown in Figure 9: at first an optical receiver 35 (PD) is fixed on first lead frame 359, its positive and negative two electrodes are connected with privates frame 357 with connecting lead 353,355 second lead frames 351 respectively.
As shown in Figure 5: utilize the made encapsulated member of polymerizability monomer material (as: epoxy, ethene azo lactones, glass, methacrylate or urea etc.) 39 to cover around optical receiver 35 and the connection lead 353,355; to reach the effect of insulation blocking, 1 of the height H of encapsulated member 39 is adjusted according to actual needs.
As shown in Figure 6: an optical transmitting set 33 is fixed to the front surface of this encapsulated member 39, and at the vertically vertical extended spot of optical receiver 35.One of emphasis of the present invention is that to select the plane light emitting diode for use be optical transmitting set 33, and be characterized in: its positive and negative two electrodes are at grade, and respectively is welded with one and connects lead 333,335; Optical transmitting set 33 mainly includes the LED epitaxial layer 332 that the substrate of being made by gallium arsenide (GaAs) or gallium phosphide materials such as (GaP) 334 and is positioned at substrate 334 top sides.
As shown in Figure 7: the connection lead 333,335 of optical transmitting set 33 positive and negative two electrodes is connected with the 6th lead frame 337 with the 5th lead frame 331 respectively.
As shown in Figure 8: utilize a seal casinghousing 31 or 37 pairs of optical receivers 35 of second encapsulated member, encapsulated member 39, optical transmitting set 33, and the part support body of all lead frames seal and cover.
When the LED of optical transmitting set 33 epitaxial layer 332 obtain by the 5th lead frame 331 and the 6th lead frame 337 power supplys to around during transmitting illuminant, directly received (as shown by arrows) by substrate 334 and encapsulated member 39 by 35 of optical receivers towards the back side light source of substrate projection by PN junction, this light source is not to be reflected light after the common decay, therefore, photoelectric sensor produces sensitive reaction immediately, realizes its function.
As Fig. 9 and shown in Figure 10: because plane light emitting diode of the present invention 33 luminous bottom sides directly regard to optical receiver 35, and the back side light that LED wafer 332 of heap of stone is launched can not be subjected to bonding wire point (connecting lead 335,333) and be connected stopping of lead 335, so the accuracy of the being quick on the draw property of photoelectric sensor and data transfer is improved.Again because five lead frame 331 or six lead frame 337 of the connection lead 333,335 of optical transmitting set 33 to the same side connects, then connect with the lead 353,355 that is connected of optical receiver 35 to second lead frame 351 and the privates frame 357 of another side, both direction differences, be separated with encapsulated member 37 in the middle of adding, can not take place so connect the short circuit of lead.If the shape difference of employed optical receiver 35, first lead frame also can be all a lead frame with second lead frame or privates frame.
Figure 11 is the another embodiment of the present invention synoptic diagram.As shown in the figure, the height H 2 that is encapsulated member 39 with difference embodiment illustrated in fig. 8 increases many than the height H shown in Fig. 81, the scope of the light source that its optical transmitting set 33 is launched enlarges to some extent, so can utilize an optical transmitting set 33 and allow a plurality of optical receivers 35 receive same signal simultaneously, enlarge usable range of the present invention again.Then adjust the height of its encapsulated member 39 according to actual needs as for distribution of light sources scope and optical path length.
Figure 12 to Figure 16 and Fig. 9 are further embodiment of this invention:
As shown in figure 12, earlier an optical receiver 35 (PD) is fixed on first lead frame 359.
As shown in figure 13, prepare an optical transmitting set 33 with substrate 334, LED epitaxial layer 332, and increase in substrate 334 bottom surfaces of optical transmitting set 33 one have an adhesion characteristic be installed with layer 60.
As shown in figure 14, the layer 60 that is installed with that directly will have adhesion characteristic is fixed on the vertical front surface of optical receiver 35 together with this optical transmitting set 33, and with connection lead 333,335,355 each electrode is connected on the corresponding lead frame respectively.Be connected respectively to equally on the lead frame in four corners owing to connect lead, therefore do not have the mutual short circuit that connects between the lead.
As shown in figure 15, utilize a hemispherical encapsulated member 37 to cover optical transmitting set 33, optical receiver 35 and respectively be connected lead 333,335,355.
Shown in Figure 16 figure, utilize 31 pairs of these optical receivers 35 of a seal casinghousing, have adhesion characteristic be installed with layer by layer 60, the part support body of optical transmitting set 33 and all lead frames seals and covers, to avoid connecting the undesired signal that lead is produced when the work.
When epitaxial layer 332 transmitting illuminants of optical transmitting set 33, what its back side light (shown in dotted arrow) can see through its substrate 334 equally and have an adhesion characteristic is installed with layer 60, under the influence that is not subjected to bonding wire point and connection lead, received, finish the transmission work of signal between the two by optical receiver 35.The height that is installed with layer 60 with adhesion characteristic can adjust equally according to actual needs.In this structure, optical transmitting set 33 also is not defined as the plane light emitting diode, and the vertical plane radial light emitting diode can use equally.
In addition, have the front surface that layer 60 also can be adhered to this optical receiver 35 separately earlier that is installed with of adhesion characteristic, then, paste the bottom of this optical transmitting set 33 again at the end face that is installed with layer 60
Figure 17 is the another embodiment of the present invention schematic cross-section.In this embodiment, optical transmitting set 73 is positioned at the longitudinal extension position of optical receiver 75 across encapsulated member 79, but is not to be positioned at its vertical vertically place.As long as it is just passable that the back side light that optical transmitting set 73 is launched can directly be accepted by optical receiver 75, the periphery of all elements is covered by second encapsulated member 71 again.Optical receiver 75 can directly be an element of an IC circuit 80, or connect devices such as a sensing apparatus, microprocessor, pcb board or chipset by lead, perhaps, its each lead frame is the part element of device such as IC circuit, chipset, pcb board, microprocessor or its composite set, can reach the effect of photoelectricity sensing equally.
The above only is a preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention, and for example: its structure does not limit use among the visible light system, and infrared ray (Ir) transmission module also can be general.Encapsulated member be installed with the material that layer can pass through according to the spectral wavelength that different actual demand is selected accordingly optical transmitting set to be sent.
Claims (34)
1, a kind of photoelectric sensor, it is characterized in that it comprises: at least one optical receiver, each optical receiver is fixed on one first lead frame, and positive and negative two electrodes of this optical receiver connect lead with one respectively and are connected on corresponding second lead frame and the privates frame; One is filled in the encapsulated member around this optical receiver; One optical transmitting set, this optical transmitting set is fixed on the front surface of this encapsulated member, positive and negative two electrodes of optical transmitting set connect lead with one respectively and are connected on corresponding the 5th lead frame and the 6th lead frame, and the light at the optical transmitting set back side sees through encapsulated member and received by optical receiver.
2, photoelectric sensor as claimed in claim 1 is characterized in that: the position at this optical transmitting set place is positioned at the vertically vertical extended spot of optical receiver.
3, photoelectric sensor as claimed in claim 1 is characterized in that: this optical transmitting set is positive and negative two electrodes plane light emitting diodes at grade.
4, photoelectric sensor as claimed in claim 1 is characterized in that: this encapsulated member is a material that allows spectral wavelength that this optical transmitting set sent pass through.
5, photoelectric sensor as claimed in claim 1 is characterized in that: include a seal casinghousing, it covers the part support body of optical receiver, encapsulated member, optical transmitting set and all lead frames.
6, photoelectric sensor as claimed in claim 5 is characterized in that: second lead frame and privates frame are positioned at seal casinghousing one side jointly, and the 5th lead frame and the 6th lead frame then are positioned at the opposite side of seal casinghousing.
7, photoelectric sensor as claimed in claim 1 is characterized in that: the thickness of this encapsulated member and optical transmitting set distribution of light sources scope linear dependence.
8, photoelectric sensor as claimed in claim 1 is characterized in that: this encapsulated member is the polymerizable monomer material.
9, photoelectric sensor as claimed in claim 1 is characterized in that: comprise one second encapsulated member, the sealing housing is for covering the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames.
10, photoelectric sensor as claimed in claim 1 is characterized in that: this encapsulated member also can be a layer that is installed with in the optical transmitting set bottom side, and it directly is fixed on the front surface of optical receiver together with optical transmitting set.
11, photoelectric sensor as claimed in claim 10 is characterized in that: this is installed with layer is one to have the material of adhesion characteristic.
12, photoelectric sensor as claimed in claim 1 is characterized in that: this encapsulated member is one to have the layer that is installed with of adhesion characteristic, and its bottom is secured at the front surface of optical receiver, and top layer is adhered to the bottom of this optical transmitting set.
13, photoelectric sensor as claimed in claim 10 is characterized in that: this is installed with layer is a material that allows spectral wavelength that this optical transmitting set sent pass through.
14, photoelectric sensor as claimed in claim 1 is characterized in that: this first lead frame also can be one of second lead frame or privates frame.
15, photoelectric sensor as claimed in claim 1 is characterized in that: this optical receiver also can be directly connected to IC circuit, chipset, pcb board, microprocessor or its composite set.
16, photoelectric sensor as claimed in claim 14 is characterized in that: each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or composite set.
17, photoelectric sensor as claimed in claim 1 is characterized in that: this encapsulated member also can directly cover all connection leads that are connected between second lead frame, the privates frame.
18, a kind of manufacture method of photoelectric sensor, it is characterized in that: it comprises the following steps:
(a) optical receiver is fixed on first lead frame, and positive and negative two electrodes of optical receiver are connected on corresponding second lead frame and the privates frame with a connection lead respectively;
(b) around optical receiver and this connection lead, form an encapsulated member;
(c) optical transmitting set is fixed on the front surface of encapsulated member;
(d) positive and negative two electrodes with optical transmitting set are connected on corresponding the 5th lead frame and the 6th lead frame with a connection lead respectively.
19, the manufacture method of photoelectric sensor as claimed in claim 18 is characterized in that: employed optical transmitting set is positive and negative two electrodes plane light emitting diodes at grade in the step (c).
20, the manufacture method of photoelectric sensor as claimed in claim 18 is characterized in that: the light source scope linear dependence of the height of employed encapsulated member and optical transmitting set projection in the step (b).
21, the manufacture method of photoelectric sensor as claimed in claim 18 is characterized in that: step (d) can also comprise the following steps: to utilize a seal casinghousing that the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames is covered afterwards.
22, the manufacture method of photoelectric sensor as claimed in claim 18 is characterized in that: employed encapsulated member is the material that a spectral wavelength that optical transmitting set is sent passes through in the step (b).
23, photoelectric sensor as claimed in claim 18 is characterized in that: the position of institute's fixed light transmitter should be positioned at the vertically vertical extended spot of optical receiver in the step (c).
24, the manufacture method of photoelectric sensor as claimed in claim 18, it is characterized in that: step (d) can also comprise the following steps: to form one second encapsulated member afterwards, and it covers this optical receiver, is installed with the part support body of layer, optical transmitting set and all lead frames.
25, the manufacture method of photoelectric sensor as claimed in claim 18 is characterized in that: employed each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or composite set in step (a) and the step (d).
26, a kind of manufacture method of photoelectric sensor, it mainly comprises the following steps:
(a) optical receiver is fixed on first lead frame;
(b) prepare a bottom side one optical transmitting set that is installed with layer is arranged;
(c) this is installed with the front surface of layer together with the direct fixed light receiver of optical transmitting set;
(d) positive and negative two electrodes with optical transmitting set are connected on corresponding the 5th lead frame and the 6th lead frame with a connection lead respectively, and positive and negative two electrodes of optical receiving set are connected on corresponding second lead frame and the privates frame with a connection lead respectively.
27, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: wherein employed optical transmitting set is a plane light emitting diode in the step (b).
28, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: can also comprise the following steps: to utilize a seal casinghousing that the part support body of this optical receiver, encapsulated member, optical transmitting set and all lead frames is covered afterwards in step (d).
29, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: wherein the layer that is installed with in the step (b) is one to have the material of adhesion characteristic, and can directly paste between optical transmitting set and the optical receiver.
30, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: wherein step (b) and step (c) also can be the following steps: (b) bottom that is installed with layer of tool adhesion characteristic is adhered to this light and connects the top layer of penetrating device; (c) optical transmitting set is adhered to this front surface that is installed with layer.
31, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: wherein the employed layer that is installed with is a material that allows spectral wavelength that this optical transmitting set sent pass through in the step (b).
32, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: the light source scope linear dependence that employed height and the optical transmitting set that is installed with layer throws in the step (b) wherein.
33, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: can also comprise the following steps: that between step (d) and step (e) one second encapsulated member covers this optical receiver, is installed with the part support body of layer, optical transmitting set and all lead frames.
34, the manufacture method of photoelectric sensor as claimed in claim 26 is characterized in that: wherein employed each lead frame also can be the part element of IC circuit, chipset, pcb board, microprocessor or component devices in step (a) and the step (d).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00109755A CN1331409A (en) | 2000-07-04 | 2000-07-04 | Photoelectric sensor and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00109755A CN1331409A (en) | 2000-07-04 | 2000-07-04 | Photoelectric sensor and its making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1331409A true CN1331409A (en) | 2002-01-16 |
Family
ID=4579845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00109755A Pending CN1331409A (en) | 2000-07-04 | 2000-07-04 | Photoelectric sensor and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1331409A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091721A (en) * | 2017-12-11 | 2018-05-29 | 阜阳师范学院 | A kind of photodetector and preparation method in silicon based opto-electronics IC chip |
| CN111162067A (en) * | 2018-11-08 | 2020-05-15 | 喆富创新科技股份有限公司 | Optical coupling structure for forming laminated pattern on wafer |
-
2000
- 2000-07-04 CN CN00109755A patent/CN1331409A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091721A (en) * | 2017-12-11 | 2018-05-29 | 阜阳师范学院 | A kind of photodetector and preparation method in silicon based opto-electronics IC chip |
| CN111162067A (en) * | 2018-11-08 | 2020-05-15 | 喆富创新科技股份有限公司 | Optical coupling structure for forming laminated pattern on wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1049504C (en) | Optical module for two-way transmission | |
| US7842957B2 (en) | Optical transceiver with reduced height | |
| KR20120101374A (en) | Optoelectronic devices with laminate leadless carrier packaging in side-looker or top-looker device orientation | |
| CN1706051A (en) | Optoelectronic hybrid integrated module and light input/output apparatus having the same as component | |
| RU2010126475A (en) | LIGHT-RADIATING DEVICE AND METHOD FOR ITS MANUFACTURE | |
| CN1190743A (en) | Photoelectric module for bidirection optical data transmission | |
| CN1420650A (en) | Light transmitting/receiving module and light transmitting/receiving apparatus wherewith | |
| CN107532995A (en) | Optical assay device | |
| CN1331409A (en) | Photoelectric sensor and its making method | |
| CN1837783A (en) | Detection device for adhesion amount of color toner | |
| CN104576631B (en) | Photoelectric detection integrated chip | |
| CN100502056C (en) | Radiation detector | |
| CN101038926A (en) | Semiconductor device | |
| US6445008B1 (en) | Photo sensing device and the manufacturing method thereof | |
| US20130142484A1 (en) | Optical element package and manufacturing method thereof | |
| CN211858645U (en) | Photoelectric sensor packaging structure and laser radar comprising same | |
| CN1384981A (en) | Semiconductor light-emitting device | |
| CN102955209A (en) | LED visible light communication system and light receiving antenna | |
| JP3427125B2 (en) | Semiconductor device with optical lens function | |
| CN210092126U (en) | Full-color LED device and display module | |
| CN110364608B (en) | Wafer level linear light source light emitting device | |
| US20210273148A1 (en) | Semiconductor device package | |
| CN113374471B (en) | Geological drilling detection device | |
| CN212158824U (en) | Photoelectric detection unit, photoelectric detection assembly and laser ranging device | |
| US7759753B2 (en) | Integrated circuit die, integrated circuit package, and packaging method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |