CN1331243C - Structure of LED base and pins and producing method - Google Patents
Structure of LED base and pins and producing method Download PDFInfo
- Publication number
- CN1331243C CN1331243C CNB021192545A CN02119254A CN1331243C CN 1331243 C CN1331243 C CN 1331243C CN B021192545 A CNB021192545 A CN B021192545A CN 02119254 A CN02119254 A CN 02119254A CN 1331243 C CN1331243 C CN 1331243C
- Authority
- CN
- China
- Prior art keywords
- pin
- junction block
- led
- pedestal
- pins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Abstract
The present invention illustrates a structure of a three-primary-color LED with four plug pins and a packaging base and a manufacturing method thereof. One of the plug pins forms a crystal grain base and a shared negative electrode wire holder, and the other three plug pins form positive electrode wire holders; the negative electrode wire holder and the positive electrode wire holders are positioned in four corners of a square, and two plug pins extend towards right; the other two plug pins extend towards left. The plug pins are formed by stamping a stamping die, an etching method or an electroplating method, and a plurality of plug pins can be formed at a time; afterwards, the four plug pins are bent downwards near the wire holders by 90 DEG towards the same direction to form a standing posture. Crystal grain welding and wire connecting are firstly carried out and then crystal grains are sliced off to form a single structure which is sealed by transparent plastics as a casting mould, or the crystal grains are firstly sealed by transparent plastics and then are sliced off to form a single structure. In another structure, the tail ends of the four plug pins are inwards bent for superficial adhesion and packaging.
Description
Technical field
The invention relates to the LED encapsulation, particularly relevant for the pedestal of primitive colours LED encapsulation and the structure and the manufacture method thereof of pin.
Background technology
General monochromatic light-emitting diode (LED) be encapsulated as two pins, and two complementary colours LED be encapsulated as three pins, the encapsulation of three primary colors (red, blue, green) LED can be three pins or four pins.Fig. 1 is the profile of two pin encapsulation of known monochromatic LED.Negative pole junction block 3 has a groove to make die pad 2, crystal grain 1 is welded on the die pad on 2 with crystal grain welding (die bond), with gold thread or aluminum steel 9 both positive and negative polarity is connected to respectively on anodal junction block 4 and the negative pole junction block 3 again,, and forms circular condenser lens then with transparent plastic 8 sealings.Fig. 2 is the profile of four pin encapsulation of primitive colours LED.Sharing negative pole junction block 3 has a groove to make die pad 2, crystal grain 1 is welded on the die pad 2 with the crystal grain welding, the negative pole of crystal grain (being the back side of crystal grain) is directly welded in to be shared on the negative pole 3, positive pole red, blue, green LED then is connected to red anodal (R+) junction block 5 respectively, blue anodal (B+) junction block 4, green anodal (G+) junction block 6, with transparent plastic sealing and the oval condenser lens that ring lens is arranged of formation, its top view as shown in Figure 3 then.Wherein die pad 2 is rectangle, and red, blue, green LED crystal grain is arranged perpendicular to the width of encapsulation, in the hope of reducing the width of encapsulation.Return Fig. 2, four pins expose encapsulation outside so that insert in the printed circuit board (PCB) jack of (figure does not show), so that welding.With reference to figure 4, the dress of known three pins of this kind or four pins and pedestal make utilize sheet metal with punch die in the drawings the direction of arrow A be washed into the negative pole junction block 3 on plane, the die pad 2 of fluted formation on it, as shown in Figure 3, going out pin 3,4,5,6 and small rod 57 and big connecting rod 55 perpendicular to the direction on Fig. 4 plane with another punch die again, be cut into the dotted line 10-10 ' of single encapsulation again with pedestal pin such as Fig. 4, between 11-11 ' encapsulation is used for crystal grain welding and routing with pedestal pin 12.The width of every branch connecting pin is minimum to be 0.5mm, and the width of negative pole and anodal junction block is 0.5mm+0.2mm+0.2mm=0.9mm, and the distance between junction block minimum be 0.5mm, so (from the pin center to another pin center) can not be less than 0.5+2 * 0.9/2=0.5+0.9+0.1=1.5mm the interval between two pins, wherein the 0.1mm alignment tolerance.Four pins need 4 * 1.5=6mm, cause to encapsulate wide and the formation ellipse, as shown in Figure 3.Dwindle encapsulation for asking, above-mentioned interval is if give minimizing again, and then punch die is very difficult makes, and forming construction is difficult more.And oval focusing is not good, and the width of pin and spacing influences the integrality of plating in the boring difficulty of PC plate and the hole.Fig. 3 indigo plant, green, red trichromatism LED need be in line at the Width perpendicular to encapsulation and arrange in order to avoid more increase package width, observe from blue (B) direction, may cannot see green (G) light, otherwise watch at green (G) light direction, then cannot see indigo plant (B) light.The suggestion of three coloured light being made stacked arrangement is arranged recently, the red, green, blue three-color LED is built up one to be folded, see that the Taiwan patent is by Zhang Xiuheng No. 90122555 case of patent of invention case in application on September 11st, 90, by name " directly making in conjunction with the encapsulation of the stacked all-colour LED light source of crystal grain with transparency conducting layer and reflector ", it is constructed as shown in Figure 8.Wherein red LED is at orlop, and brilliant PN of heap of stone connects face on opaque GaAs substrate 71.Promptly substrate 71 times, the positive pole 72 of red LED is a metallic reflector to the red LED negative pole.The negative pole of blue led is the metallic reflector 73 on the N type semiconductor, the metallic reflector of positive pole 74 on P type semiconductor, the negative pole 75 of green LED and positive pole 76 are as the same, but the conductive layer between LED of all kinds is transparent ITO (stanniferous indium oxide), make three coloured light can mix the back to front irradiation.But the LED crystal grain of this kind device can not change four-limbed into and will make width wideer, unfavorable miniaturization with known three pin packaging structures.Dwindle the boring degree of adding to the difficulties that the pin spacing makes the PC plate again, the aperture is too small to be made again and is plated in uneven thickness in the hole.
Summary of the invention
Therefore purpose of the present invention reduces the area of shared circuit board for the structure of a kind of LED encapsulation base and pin is provided with the width that reduces the LED encapsulation, and makes hole inner metal layer thickness even when the boring of PC plate is electroplated easily, makes contact good.The manufacturing of favourable LED array.
A time purpose of the present invention makes the LED encapsulation rounded for the structure of a kind of LED encapsulation base and pin is provided, and the sidewall in the pedestal forms the light that circular paraboloid makes reflection and focuses on again to front irradiation, to increase brightness.And the focusing of the annulus paraboloid on transparent enclosure surface is good, increases visual effect.
Another object of the present invention is applicable to the encapsulation of the stacked LED crystal grain of polychrome for a kind of LED encapsulation base and pin structure is provided, and length of wire bonding is shortened to increase reliability and to reduce connection resistance.
Another purpose of the present invention is for providing a kind of LED encapsulation base and pin structure and manufacture method thereof, make the configuration of four pin squarelys and can stand, make surface encapsulation (SMT) become possibility, and easy to assembly, and the PC plate needn't hole and electroplate reduce production costs.
A purpose again of invention makes punching press all in same direction operation for a kind of LED encapsulation base and pin structure and manufacture method thereof are provided, and reduces the operational difficulty degree.
For reaching above-mentioned purpose and improving the shortcoming that general LED encapsulates, the structure of four pins of primitive colours LED of the present invention and encapsulation base, the structure of the pedestal of LED encapsulation usefulness and pin, junction block, comprise: a pedestal, in have the groove of an annulus paraboloid sidewall to make die pad with the usefulness of doing the crystal grain welding and make to share the negative pole junction block, extend to form first pin, extend to the right;
The anodal junction block of one the one LED, it is parallel with first pin to extend to form second pin, extension to the right;
The anodal junction block of one the 2nd LED extends to form the relative extension left in line with first pin of the 3rd pin; The anodal junction block of one the 3rd LED extends to form parallel with the 3rd pin and relative with second pin extension left in line of four-limbed; Aforementioned shared negative pole junction block and three anodal junction blocks are positioned on four square angles, and pedestal and die pad then are positioned at square central authorities; The big connecting rod (large tie bar) of a plurality of small rods (small tie bar) and pin end links into an integrated entity adjacent pin in order to construction, and big connecting rod has the little perforation of the transmission of conveying to transmit in order to automation, and encapsulation finishes and promptly gives excision.Aforementioned die pad is the groove that annulus paraboloid sidewall is arranged, and aforementioned pedestal extends to square space except that three anodal junction blocks in order to heat radiation as far as possible.And anodal junction block is square or circular.
The manufacture method of this kind superposition of three primary colors LED encapsulation, comprise the following step: (a) first step forms a punch die structure, have: a pedestal, in have the groove of an annulus paraboloid sidewall to form die pad, an a corner is for sharing the negative pole junction block, extending to form first pin extends to the right; The anodal junction block of one the one LED extends to form the parallel extension to the right with first pin of second pin; The anodal junction block of one the 2nd LED extends to form the relative extension left in line with first pin of the 3rd pin; The anodal junction block of one the 3rd LED, extend to form four-limbed parallel with the 3rd pin and relative with second pin in line, extension left; Described shared negative pole junction block and three anodal junction blocks are positioned on square four jiaos, and pedestal and die pad then are positioned at square central authorities; The big connecting rod of a plurality of small rods and pin end links into an integrated entity adjacent pin, and big connecting rod has the little perforation of the transmission of conveying; A plurality of aforementioned structure form a line; (b) second step strikes out aforementioned pedestal and pin with punch die with sheet metal; (c) third step, with pedestal punching press one groove, its sidewall is annulus paraboloid reflecting surface to form die pad with punch die; (d) the 4th step bends 90 ° downwards in the same direction with four pins and makes die pad upwards near junction block, pin is downward; (e) the 5th step is welded in superposition of three primary colors LED crystal grain on the die pad; (f) the 6th step is connected to the negative pole on the crystal grain on the shared negative pole with metal wire, and positive pole is connected on the anodal junction block; (g) the 7th step cuts into single structure with a plurality of aforementioned structure; (h) the 8th step seals with the mold transparent plastic; (i) the 9th step, excision small rod and big connecting rod.But the 7th step can be carried out after the 8th step is finished.And the first step and second step can etching method or galvanoplastic formation.The present invention also can be after finishing transparent plastic sealing, and four pins are outwards terminal or bend inwards, and makes its formation can be directly be connected in kenel on the circuit board with surface mount technology (SMT), and circuit board can needn't hole and electroplate, to reduce work flow.
Description of drawings
Fig. 1: the profile of two pin encapsulation of (known technology) monochromatic LED.
Fig. 2: the profile of (known technology) three primary colors white light LEDs encapsulation.
Fig. 3: the top view of (known technology) three primary colors white light LEDs encapsulation.
Fig. 4: (known technology) is with four pins of sheet metal punch die moulding and the plane graph of pedestal encapsulation.
Fig. 5: according to the present invention with four pins of sheet metal punch die moulding and the plane graph of pedestal structure dress.
Fig. 6: separated and bend 90 ° four pins of pin and the perspective view of pedestal encapsulation.
Fig. 7: the die pad that the groove of circular paraboloid sidewall is arranged.
Fig. 8: the structure perspective view of superposition of three primary colors LED.
Fig. 9: four pins behind welding LED crystal grain and routing and the perspective view of pedestal encapsulation.
Figure 10: (a) (b) foundation four pins of the present invention and pedestal are packaged in the perspective view of surface mount technology, (a) inwardly bending again of end, (b) outwards bending again of end.
Description of reference numerals:
1:LED crystal grain 2: die pad
3: pedestal (negative pole junction block) 4: blue anodal (B+) junction block
5: red anodal (R+) junction block 6: green anodal (G+) junction block
7: pin 8: transparent plastic
9: the online 10-10 ' of metal: line of cut
11-11 ': line of cut 12: encapsulate with pedestal and pin
51,52,53,54: pin 55: big connecting rod
56: the terminal bending 57 of pin: small rod
58: annulus paraboloid sidewall reflects face 59: superposition of three primary colors LED crystal grain
60: carry the little perforation of transmission
71: substrate 72: the red LED positive pole
73: blue led negative pole 74: the blue led positive pole
75 green LED negative poles, 76 green LED positive poles
Embodiment
Content of the present invention can cooperate its relevant drawings elaboration and give explanation via following embodiment.Though the structure of encapsulation base of the present invention and pin and manufacture method are with the example that is encapsulated as of four pins.But three pins or more pins also can utilize principle of the present invention and give enforcement.
According to the first embodiment of the present invention, with reference to figure 5, plane graph for four pins of primitive colours LED and base structure, one end of first pin 51 forms pedestal and shares negative pole junction block 3, wherein there is a groove to form die pad 2 and usefulness is installed for stacked primitive colours LED crystal grain, die pad 2 focuses on again to front irradiation the light of reflection, to increase brightness for the groove of circular paraboloid sidewall is arranged.Second and third, an end of four pins 52,53,54 forms the anodal junction block 4,5,6 of blueness, redness and green LED; First and second pin 51,52 levels are extended to a side; Third and fourth pin 53,54 levels are extended to opposite side.Pedestal and pin are one group of arrangement with four pins, with the big connecting rod 55 of small rod 57 and pin end adjacent pin are linked into an integrated entity in order to construction, and big connecting rod has the little perforation 60 of the transmission of conveying to transmit in order to automation.Utilize sheet metal with the pressing mold drawing, subpunch pluralize pedestal and pin, the groove of punching press annulus paraboloid sidewall forms die pad 2 again, as shown in Figure 5.90 ° of edge D-D ' line bendings again after the drawing, as shown in Figure 6.Promptly can automation carry out crystal grain welding and routing encapsulation, edge C-C ' line cuts again, as shown in Figure 9.Excise small rod 57 and big connecting rod 55 again with die casting transparent plastic sealing (figure does not show) then.Because the pin on every limit only has two, is separated with enough spaces therebetween, if the width of every leg is 0.5mm, the distance of two pins has enough spaces and needn't be less than 0.5mm, so the minimum area of four pins is (0.5mm+0.5m)
2=1mm
2, also can be bigger and unrestricted.And length of wire bonding is shortened and increase reliability, and make the boring of PC plate easy, the aperture can be strengthened and make to electroplate and be evenly distributed, and contact is good, and the qualification rate that makes LED be welded in the PC plate increases, and increases reliability.Because of four pins are four jiaos of configurations, LED can stand again, helps installing and welding, and this is one of advantage of the present invention.
According to the second embodiment of the present invention, with punch die as shown in Figure 5, after the sheet metal drawing, promptly carry out crystal grain welding and routing encapsulation, the bending of edge D-D ' line is 90 ° again, and finishes with after 8 sealings of die casting transparent plastic, again with small rod 57 and big connecting rod 55 excisions.So can utilize automated production and can produce in a large number, this is one of advantage of the present invention.
According to the third embodiment of the present invention, as shown in figure 10 behind the transparent plastic sealing of finishing second example and excision small rod 57 and big connecting rod 55, four pins terminal 56 inwardly or are outwards bent, its formation can directly be connected on the circuit board with surface mount technology (SMT), circuit board can needn't hole and electroplate, to reduce work flow, help the making of the LED array of PC plate, this is one of advantage of the present invention.
The above is embodiments of the invention, be not to finish the present invention in order to limit, all other do not break away from the equivalence of finishing under the spirit of the present invention with explanation and changes or modification, for example be used for three pins or more pins, or do not electroplate to be shaped etc. to be included in other method such as etching forming and apply for a patent in the claim scope with drawing.
Claims (10)
1. the structure of four pins of a primitive colours LED and encapsulation base is the structure of the pedestal of LED encapsulation usefulness and pin, junction block, it is characterized by: comprise:
One pedestal, in have the groove of an annulus paraboloid sidewall do die pad with do the crystal grain welding with and do to share the negative pole junction block, extend to form first pin, extend to the right;
The anodal junction block of one the one LED, it is parallel with first pin to extend to form second pin, extension to the right;
The anodal junction block of one the 2nd LED extends to form the relative extension left in line with first pin of the 3rd pin;
The anodal junction block of one the 3rd LED extends to form parallel with the 3rd pin and relative with second pin extension left in line of four-limbed;
Aforementioned shared negative pole junction block and three anodal junction blocks are positioned on four square angles, and pedestal and die pad then are positioned at square central authorities;
The big connecting rod of a plurality of small rods and pin end links into an integrated entity adjacent pin, and big connecting rod has the little perforation of the transmission of conveying, and big small rod finishes in encapsulation and promptly gives excision.
2. structure as claimed in claim 1 is characterized by: wherein aforementioned pedestal extends to the square space except that three anodal junction blocks that four pins form.
3. structure as claimed in claim 1 is characterized by: wherein aforementioned anodal junction block is square.
4. structure as claimed in claim 1 is characterized by: wherein aforementioned anodal junction block is for circular.
5. the manufacture method of superposition of three primary colors LED encapsulation is characterized by: comprise the following step:
(a) first step forms a punch die structure, has:
One pedestal, in have the groove of an annulus paraboloid sidewall to form die pad, an a corner is for sharing the negative pole junction block, extending to form first pin extends to the right;
The anodal junction block of one the one LED extends to form the parallel extension to the right with first pin of second pin;
The anodal junction block of one the 2nd LED extends to form the relative extension left in line with first pin of the 3rd pin;
The anodal junction block of one the 3rd LED, extend to form four-limbed parallel with the 3rd pin and relative with second pin in line, extension left;
Described shared negative pole junction block and three anodal junction blocks are positioned on square four jiaos, and pedestal and die pad then are positioned at square central authorities;
The big connecting rod of a plurality of small rods and pin end links into an integrated entity adjacent pin, and big connecting rod has the little perforation of the transmission of conveying;
A plurality of aforementioned structure form a line;
(b) second step strikes out aforementioned pedestal and pin with punch die with sheet metal;
(c) third step, with pedestal punching press one groove, its sidewall is annulus projectile reflecting surface to form die pad with punch die;
(d) the 4th step bends 90 ° downwards in the same direction with four pins and makes die pad upwards near junction block, pin is downward;
(e) the 5th step is welded in superposition of three primary colors LED crystal grain on the crystal grain;
(f) the 6th step is connected to the negative pole on the crystal grain on the shared negative pole with metal wire, and positive pole is connected on the anodal junction block;
(g) the 7th step cuts into single structure with a plurality of aforementioned structure;
(h) the 8th step seals with the mold transparent plastic;
(i) the 9th step, excision small rod and big connecting rod.
6. manufacture method as claimed in claim 5 is characterized by: wherein the 7th step can be carried out after the 8th step is finished.
7. manufacture method as claimed in claim 5 is characterized by: wherein the first step and second step form with etching method.
8. manufacture method as claimed in claim 5 is characterized by: wherein the first step and second step form with galvanoplastic.
9. manufacture method as claimed in claim 5 is characterized by: wherein four pins can be further with the inwardly bending again of four pin ends, to stick together the usefulness of encapsulation as the surface.
10. manufacture method as claimed in claim 5 is characterized by: wherein four pins can be further with the outwards bending again of four pin ends, to stick together the usefulness of encapsulation as the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021192545A CN1331243C (en) | 2002-05-14 | 2002-05-14 | Structure of LED base and pins and producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021192545A CN1331243C (en) | 2002-05-14 | 2002-05-14 | Structure of LED base and pins and producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1458699A CN1458699A (en) | 2003-11-26 |
| CN1331243C true CN1331243C (en) | 2007-08-08 |
Family
ID=29426754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021192545A Expired - Fee Related CN1331243C (en) | 2002-05-14 | 2002-05-14 | Structure of LED base and pins and producing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1331243C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100714589B1 (en) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | Method for Manufacturing Vertical Structure Light Emitting Diode |
| CN102244122A (en) * | 2011-06-13 | 2011-11-16 | 人和光伏科技有限公司 | Junction box of photovoltaic cell |
| CN103794589A (en) * | 2012-11-02 | 2014-05-14 | 力神科技股份有限公司 | Semiconductor element structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147367A (en) * | 1997-12-10 | 2000-11-14 | Industrial Technology Research Institute | Packaging design for light emitting diode |
| JP2001320093A (en) * | 2000-05-04 | 2001-11-16 | Mokukin Yu | Blank of light emitting diode and method of its manufacture |
-
2002
- 2002-05-14 CN CNB021192545A patent/CN1331243C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147367A (en) * | 1997-12-10 | 2000-11-14 | Industrial Technology Research Institute | Packaging design for light emitting diode |
| JP2001320093A (en) * | 2000-05-04 | 2001-11-16 | Mokukin Yu | Blank of light emitting diode and method of its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1458699A (en) | 2003-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW523942B (en) | package socket and package legs structure for LED and manufacturing of the same | |
| CN102142513B (en) | LED package and method for manufacturing same | |
| CN102760825A (en) | LED package and method for manufacturing same | |
| US8860047B2 (en) | Semiconductor light-emitting device | |
| EP1928033B1 (en) | Light-emitting apparatus and method of producing the same | |
| CN101151739A (en) | Led of side view type and the method for manufacturing the same | |
| CN102683509A (en) | Led module | |
| CN102214776B (en) | Light emitting diode package, lighting device and light emitting diode package substrate | |
| CN103190009A (en) | Light emitting device, and package array for light emitting device | |
| CN101847626B (en) | Light-emitting device | |
| CN102544310A (en) | Mounting substrate and manufacturing method thereof | |
| CN103210508B (en) | Light emitting device and method for manufacturing same | |
| JP4242194B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN206349359U (en) | Lead frame structure and chip architecture | |
| CN1331243C (en) | Structure of LED base and pins and producing method | |
| CN103210512B (en) | The manufacturing method of light emitting device and wiring board | |
| CN100369278C (en) | Semiconductor light emitting device | |
| JPH07326797A (en) | Manufacture of side emission type semiconductor light emitting device | |
| JP2003304000A (en) | Method for manufacturing package for light-emitting diode | |
| US6830496B2 (en) | Method of fabricating light emitting diode device with multiple encapsulants | |
| CN102027607A (en) | LED package, lead frame and method for producing the same | |
| US20080151562A1 (en) | Fabrication structure for light emitting diode component | |
| JP3138706U (en) | A light-emitting diode chip sealing structure having a high-efficiency horizontal light-emitting effect. | |
| CN101621052B (en) | LED encapsulating array, structure and method | |
| CN110071207A (en) | LED encapsulation method and LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |