CN1330012C - Manufacture device for powder thermoelectric material and manufacture method for powder thermoelectric material using the said device - Google Patents
Manufacture device for powder thermoelectric material and manufacture method for powder thermoelectric material using the said device Download PDFInfo
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- CN1330012C CN1330012C CNB011251611A CN01125161A CN1330012C CN 1330012 C CN1330012 C CN 1330012C CN B011251611 A CNB011251611 A CN B011251611A CN 01125161 A CN01125161 A CN 01125161A CN 1330012 C CN1330012 C CN 1330012C
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- 239000000463 material Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000843 powder Substances 0.000 title description 42
- 238000000034 method Methods 0.000 title description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000009434 installation Methods 0.000 claims description 15
- -1 silicon aluminum oxygen nitrogen Chemical compound 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000155 melt Substances 0.000 description 12
- 239000006104 solid solution Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 230000008676 import Effects 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 2
- PDYNJNLVKADULO-UHFFFAOYSA-N tellanylidenebismuth Chemical compound [Bi]=[Te] PDYNJNLVKADULO-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 235000020985 whole grains Nutrition 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
The invention provides a powdered thermoelectric material manufacturing device incorporating a rotary disk which is durable against thermal shocks, little reacts to raw materials, and can be rotated at a high speed. This powdered thermoelectric material manufacturing device is provided with a container 1 used for mixing raw materials having prescribed compositions with each other and heat-melting the mixture, a funnel or pouring port 2 used for pouring the heat-melted molten mixture, and the rotary disk 3 which is used for scattering the poured molten mixture and made of a silicon nitride or a material containing the silicon nitride.
Description
Technical field
The present invention relates to a kind of manufacturing installation of the powder thermoelectric material that is used to make the hot-die spare that carries out the conversion between heat energy and the electric energy and be used for the rotating disk of this device.
Background technology
Pyroelectric phenomena are the general name of Seebeck phenomenon, amber ear card phenomenon, Thomsons phenomenon, utilize the element of this phenomenon to be called thermoelectric element, thermocouple, electronic cooling element etc.Pyroelectric phenomena are the phenomenon for finding between dissimilar metal originally, but can obtain semi-conductive thermoelectric material in recent years, can not be by the conversion efficiency of metal material acquisition thereby can obtain.Utilize thermoelectric semiconductor material thermoelectric element simple structure and also handle easily, can keep stable properties, so the utilization in scope is widely gazed at.Particularly can carry out near the precision temperature control of local cooling and room temperature, so, in the adjustment of photoelectron and semiconductor laser and the application of small refrigerator, carried out the extensive studies exploitation.
In the manufacture process of thermoelectric element, the method that the past adopts is to form weighing raw materials in accordance with regulations, and heating makes its fusing, and it is solidified, and makes the solid solution spindle, makes solid solution spindle powdered again, carries out sintering subsequently, and is cut into thin slice or is cut into piece.In above-mentioned operation,, has the method for pulverizing the solid solution spindle, carrying out whole grain by sieve as the method that makes the thermoelectric material powdered.Yet, according to this method,,, in whole grain operation, the screen cloth eye occurs and stop up so powder becomes flakey owing to be the comminuted solids material, in the compressing powder operation, cause descending in the pack completeness of metal pattern.
In order to improve such problem, has the method for in the manufacturing of thermoelectric element, using the globular powder thermoelectric material.The manufacture method of globular powder thermoelectric material for example, is disclosed in the flat 4-293276 communique of Japanese Patent Application Publication (spy opens).In the prior art, the globular powder thermoelectric material obtains by the method that is called rotating disk method (or centrifugal spray method), in the method, mixes and melt the raw material of regulation, make under the melt droplets of acquisition to rotating disk, it is splashed by metal material or ceramic material.
Utilizing the globular powder thermoelectric material to make the occasion of thermoelectric module, the module that the more little realizability more of known powder diameter can be good.Therefore, in order to make for example micro powder thermoelectric material below the 40 μ m, need make the disk high speed rotary.
In order to make the disk high speed rotary to obtain powder thermoelectric material, there is the condition that should satisfy in disk.Promptly, disk should meet the following conditions etc.: (1) light weight also has enough mechanical strengths to stand high speed rotary, (2) have the thermal endurance and the resistance to sudden heating of the high temperature of the thermoelectric material that can bear fusing, thermal coefficient of expansion is little, (3) solidify on disk for the melt that prevents thermoelectric material, the all thermal capacity of disk is little, and the melt of (4) and thermoelectric material reactive little can not sneaked into impurity in thermoelectric material.
Yet the disk of prior art is because diameter and quality are big, so be difficult to high speed rotary.In addition, owing to use metal and pottery as disc material, so the thermal capacity of disk is big, the heat of the melt of thermoelectric material is siphoned away by disk, and melt easily solidifies on disk.As a result, it is heavier that disk becomes, and is difficult to high speed rotary, and the revolution balance of disk is easy to destroy.In addition, also become the reason of the decrease in yield of powder thermoelectric material.
In order to improve these aspects, but for example for high speed rotary, reduce thermal capacity and when disk is lightened, the disk attenuation, thus mechanical strength descends.On the contrary, in the time will keeping mechanical strength, the inertia mass of disk and thermal capacitance quantitative change are big.In addition, when using metal material as disc material, because thermal coefficient of expansion is big, so thermal stress makes material deformation, the durability possible deviation.Particularly with iron or titanium during, be easy to the fusant reaction with thermoelectric material, so the composition of thermoelectric material changes as material.Therefore, up to the present, also there is not to find to satisfy fully the disc material of above-mentioned all conditions.
In addition, the disk that also made up 2 kinds of material.For example, in Japanese kokai publication hei 2-145710 communique, record by heat-insulating material covering rosette, by the structure of metal holder keeping around it.In addition, in Japanese kokai publication hei 7-34102 communique, record the structure that ceramic layer is configured to the titanium alloy surface of light weight.Yet, in above-mentioned existing structure, because disk is bigger, thus can not high speed rotary, maximum speed of gyration is 15 for example, about 000rpm, minimum grain size also can only be for about 130 μ m.In addition, the heat that also stays melt easily by disk siphon away, melt is easy to solidify, the problem of powder decrease in yield.
The present invention makes in view of the above problems, its purpose is to provide a kind of powder thermoelectric material manufacture method and device, this powder thermoelectric material manufacture method is when making powder thermoelectric material by the rotating disk legal system, use light weight and intensity is big, the coefficient of expansion is little, have the material with the reactive little character of material, and use can reduce the disk that thermal capacity ground designs, thereby can prevent melt solidifying, and can make powder, can make the micro mist of high finished product rate by high speed rotary.
The present invention also provides a kind of rotating disk that is used for the thermoelectric material manufacturing installation.
Summary of the invention
In order to address the above problem, funnel or the sprue gate and being used to that powder thermoelectric material producing device of the present invention comprises the container that is used to mix raw material with predetermined component and heating and makes its fusing, be used to inject the raw-material melt of heat fused make that the melt of cast splashes by silicon nitride or comprise the rotating disk of the material of silicon nitride.Above-mentioned rotating disk also can be by the material that contains the silicon nitride more than 90%.
A kind of rotating disk that is used for the thermoelectric material manufacturing installation of the present invention is characterized in that: comprising: be used for the round plate that the raw-material melt of injection splashed by revolution, the shaft-like connecting portion that described round plate is connected with slewing equipment; Described round plate and described connecting portion are by silicon nitride or to comprise the material of silicon nitride integrally formed.
A kind of thermoelectric material manufacturing installation of the present invention, it is characterized in that: comprising: be used to mix raw material and heat the container that makes its fusing with predetermined component, be used to inject the apparatus for pouring of the raw-material melt of heat fused, and rotating disk, this rotating disk comprises and is used for making the raw-material melt of above-mentioned injection round plate that splashes and the shaft-like connecting portion that described round plate is connected with slewing equipment by revolution; The described round plate of described rotating disk and described connecting portion are formed by silicon nitride or the material that comprises silicon nitride.
In addition, powder thermoelectric material manufacture method of the present invention comprises mixes the raw material with predetermined component and heats the operation that makes its fusing, with the raw-material melt cast of heat fused to by silicon nitride or comprise the operation of rotating disk of the material of silicon nitride, thereby and by above-mentioned rotating disk makes that the melt of cast splashes, the globular powder thermoelectric material is made in small spheroidizing, cooling operation.Above-mentioned rotating disk also can be by the material that contains the silicon nitride more than 90%.
Description of drawings
Fig. 1 is the schematic diagram that the powder thermoelectric material manufacturing installation of an embodiment of the present invention is shown.
Fig. 2 is the flow chart that the powder thermoelectric material manufacture method of an embodiment of the present invention is shown.
Fig. 3 is the perspective view that the thermoelectric module structure is shown, and this thermoelectric module utilization is made by the powder thermoelectric material of the manufacture method manufacturing of an embodiment of the present invention.
Fig. 4 (a) is the figure that the section configuration of the rotating disk that uses in an embodiment of the present invention is shown, and (b) is the figure that is illustrated in the shape of the rotating disk that uses in the comparative experiments.
Fig. 5 is the figure that experimental result is shown, in this experiment, by the rotating disk that uses various materials the to make thermoelectric material that makes powder.
Embodiment
Form of implementation of the present invention is described with reference to the accompanying drawings.Same inscape is adopted same reference marks, omit explanation.
Fig. 1 is the schematic diagram that the powder thermoelectric material manufacturing installation of an embodiment of the present invention is shown.This device comprises the crucible 1 be located in the chamber 8, funnel 2, rotating disk 3, motor 4, and powder collection portion 7.
In addition, Fig. 2 is the flow chart that the powder thermoelectric material manufacture method of an embodiment of the present invention is shown.Below, the dusty material manufacture method of an embodiment of the present invention is described according to Fig. 1 and Fig. 2.
At first, weigh raw material, be sealing in the crucible 1 (step S1) with predetermined component.As the raw material of thermoelectric material, for example use the antimony (Sb) and the bismuth (Bi) of V group element, and the selenium (Se) and the tellurium (Te) of VI family element.The solid solution of V family and VI family is owing to having the hexagonal crystal structure, so the element more than at least 2 kinds among use Bi, Te, Sb, the Se is as raw material, and is general as following expression.
(Bi
1-XSb
X)
2(Te
1-YSe
Y)
3
Wherein, 0≤X, Y≤1
Specifically, as the material of P type element, can be at bismuth telluride (Bi
2Te
3) and antimony telluride (Sb
2Te
3) mixed crystal be that the dopant that adds the P type in the solid solution is used, as the material of N type element, can be at bismuth telluride (Bi
2Te
3) and bismuth selenide (Bi
2Se
3) mixed crystal be that the dopant that adds the N type in the solid solution is used.
Then, heat and make its fusing (step S2) being sealing into raw material in the crucible 1 by high frequency coil or heater etc.Then, the raw-material melt cast (step S3) to rotating disk 3 that will melt through funnel 2.Rotating disk 3 is connected to motor 4, and speed of gyration is controlled.The melt 5 of cast splashes (step S4) by rotating disk.The melt 6 that splashes is cooled off, and falls in chamber 8, collects powder collection portion 7 (step S5).Here, as the pouring procedure among the step S3, melt can drip into droplet-like, also can flow down continuously from the sprue gate.
Fig. 3 illustrates the figure that utilizes the thermoelectric module that such globular powder thermoelectric material makes.As shown in Figure 3, between 2 ceramic substrates 11 are with 12, be connected P type element (P type semiconductor) 13 and N type element (N type semiconductor) 14, thereby it is right to form the PN element, and it is right to be connected in series a plurality of PN elements by electrode 15.Connect electric current at the N type element of an end of the right series loop of such PN element and import terminal (positive pole) 16, connect electric current at the P of other end type element and import terminal (negative pole) 17. Import 16,17 applied voltages of terminal at these electric currents, thereby right series loop imports terminal (negative pole) 17 towards electric current and flows through the PN elements to make electric current import terminal (positive pole) 16 from electric current, at this moment, ceramic substrate 11 sides are cooled off, and ceramic substrate 12 sides are heated.As a result, produce such hot-fluid shown in the arrow among the figure.
Here, the performance index Z of the performance of expression thermoelectric element by Seebeck coefficient α, conductivity, and conductive coefficient κ be expressed as following formula.
Z＝α
2σ/κ
Performance index Z is big more, and then the performance of thermoelectric element is good more.Thermocouple is generally made by sintered body, but reduces conductive coefficient by the crystal grain diameter refinement that makes sintered body.Therefore, make sintered body, then can be made into the big thermoelectric element of performance index as using the attritive powder thermoelectric material of making by the present invention.That is, can improve the performance of thermoelectric element, improve the productivity ratio of high performance thermoelectric element.
Below, the material and the shape of the rotating disk of the globular powder manufacturing installation that uses this form of implementation are described.Fig. 4 (a) is the sectional drawing that the shape of the rotating disk that uses in the globular powder manufacturing installation of this form of implementation is shown.In addition, figure (b) is for illustrating the sectional drawing of the shape of the rotating disk of use as a comparative example.
In order to prevent that the melt that is poured into rotating disk from solidifying, and need reduce the thermal capacity of rotating disk on disk.For this reason, can use the little material of specific heat, or rotating disk self is lightened.In addition, in order to improve speed of gyration, also must reduce diameter.Yet, in the time will making the little rotating disk of thin thickness, diameter, the problem of thermal shock appears again.That is, when the melt of falling the raw material on the disk after the fusing contacted above the disk, contact portion became high temperature very soon.At this moment, the following of disk still is original temperature in moment, so, in the inner temperature gradient that produces of disk.The internal stress that the big more then thermal expansion of temperature gradient forms is big more, becomes to be easy to produce to destroy, so more little with following distance above, that is, the wall of disk is thin more, and is then easy more destroyed.
In order making this thermal shock to be had durability and the thin disk of wall, preferably to use the little material of thermal coefficient of expansion.Perhaps, with respect to stress, also can use material with the intensity that can bear the such degree of this stress.
In the present invention, in order to make rotating disk, use the material that comprises silicon nitride or silicon aluminum oxygen nitrogen heat-stable ceramic (サ イ ア mouth Application).The specific heat of silicon nitride or silicon aluminum oxygen nitrogen heat-stable ceramic is identical substantially with metal or pottery, but thermal coefficient of expansion and thermal stress are all less.And bending strength is compared also not little with other material.
The silicon aluminum oxygen nitrogen heat-stable ceramic obtains by mixed aluminium oxides in silicon nitride and other material, and β silicon aluminum oxygen nitrogen heat-stable ceramic is represented as described below generally speaking.
Si
6-ZN
8-ZAl
ZO
Z
Wherein, the value of Z is more suitable in 0～3.8 scope.In this form of implementation, use the β silicon aluminum oxygen nitrogen heat-stable ceramic of Z 0.34.Si in this occasion
6-ZN
8-ZMolecular weight is 266.2, Si
6-ZN
8-ZAl
ZO
ZMolecular weight be 280.8, so, the silicon nitride comprising Si of institute in the above-mentioned β silicon aluminum oxygen nitrogen heat-stable ceramic
3N
4Ratio by
266.2÷280.8×100＝94.8
Be 94.8% as can be known.
In addition, in this form of implementation,, in about 90% above-mentioned β silicon aluminum oxygen nitrogen heat-stable ceramic, mix about 10% Y as the material of rotating disk
2O
3Or SiO
2Glass.Therefore, silicon nitride Si
3N
4The all proportions of relative material by
94.8×0.9＝85.3
Be 85.3% as can be known.
Fig. 5 is a results of comparative experiment, in this comparative experiments, uses the rotating disk of the embodiment of the invention of being made by silicon nitride or silicon aluminum oxygen nitrogen heat-stable ceramic and the rotating disk of the comparative example made by the material of the prior art thermoelectric material that makes powder.In embodiment 1-embodiment 4, the rotating disk of the shape of use Fig. 4 (a).Operate in rotating disk diameter 30mm, rotating speed 60, carry out under the such condition of 000rpm, 720 ℃ of degree of melt temperature, meltage 2kg.In addition, carry out under the composition of 2 kinds of thermoelectric materials, a kind is solid solution Bi for bismuth telluride and the bismuth selenide mixed crystal as the raw material of N type element
2(Te
0.9Se
0.1)
3, another kind of for being solid solution (Bi as the bismuth telluride of the material of P type element and the mixed crystal of antimony telluride
0.25Sb
0.75)
2Te
3
Below, the material and the shape of the rotating disk that is used for comparison are described.As shown in Figure 5, by titanium-aluminium-vanadium of comparative example 1-6 be alloy, nitrogen boron, graphite respectively the rotating disk of shape shown in the construction drawing 4 (a) compare experiment.In addition, for by above-mentioned experimental result or know boron nitride and the graphite that is easy to destroy, 7-10 as a comparative example, the disk at boron nitride or graphite is installed the support that is made of titanium like that shown in Fig. 4 (b).
Below with reference to Fig. 5 illustrative experiment result.
At first, by comparative example 1 and 2 as can be known, be that the thermal coefficient of expansion of the rotating disk made of alloy is big by titanium-aluminium-vanadium, but bending strength is also big, so, but heat shock resistance and high speed rotary.Yet, owing to the melt of ingredient in the alloy and raw material produces reaction, so, corrosion appears reacting on the rotating disk surface.Therefore, the powder of manufacturing can not use.Particularly in comparative example 2, seriously corroded, loss appears in disk.
For boron nitride of in comparative example 3-6, enumerating and graphite, use the operation stability of rotating disk of these materials poor, the powder rate of finished products is extremely low, is 2-3%.In addition, can not measure average grain diameter.This is because its bending strength of thermal expansion of self is less relatively, so when the cast melt, disk is destroyed immediately, fails basically to make powder.Occasion at boron nitride and graphite installation titanium framework is comparative example 7-10.Like this, though guaranteed the mechanical strength of rotating disk, make the quality of rotating disk and thermal capacitance quantitative change big simultaneously, melt is easy to solidify on disk.When melt solidifying, as comparative example 7-10 illustrates, produce vibration etc., operation stability descends, and the powder rate of finished products is variation also.In addition, average grain diameter is about 70 μ m.
Compare with above comparative example, silicon nitride or silicon aluminum oxygen nitrogen heat-stable ceramic is little as the thermal coefficient of expansion of the rotating disk of the embodiment of material, and bending strength is big, so, even the disc thickness attenuation also is enough to bear thermal shock.In addition, because proportion and metal etc. are more little, thermal capacity is also not too big, and the melt of cast seldom solidifies on disk.Therefore, kept long operation stability.In addition, owing to can keep shape small-sized, light weight, so, can keep high-speed cruising, rate of finished products that can be good is made the powder of small particle diameter.Like this, by using silicon nitride or silicon aluminum oxygen nitrogen heat-stable ceramic, can obtain good result as the rotating disk of material.
As described above, according to the present invention, in the manufacturing of the powder thermoelectric material of rotating disk method, by using the rotating disk by the material that comprises silicon nitride, rate of finished products that can be good is made the average grain diameter powder thermoelectric material littler than prior art.Therefore, can improve the performance and the productivity ratio of thermoelectric element.
Claims (6)
1. rotating disk that is used for the thermoelectric material manufacturing installation is characterized in that: comprising:
Be used for the round plate that the raw-material melt of injection splashed by revolution,
The shaft-like connecting portion that described round plate is connected with slewing equipment;
Described round plate and described connecting portion are by silicon nitride or to comprise the material of silicon nitride integrally formed.
2. rotating disk as claimed in claim 1 is characterized in that: described rotating disk is by the chemical formula Si of Z≤3.8
6-zN
8-zAl
zO
zThe β silicon aluminum oxygen nitrogen heat-stable ceramic of expression is made.
3. thermoelectric material manufacturing installation is characterized in that: comprising:
Be used to mix raw material and heat the container that makes its fusing with predetermined component,
Be used to inject the apparatus for pouring of the raw-material melt of heat fused, and
Rotating disk, this rotating disk comprise and are used for making the raw-material melt of above-mentioned injection round plate that splashes and the shaft-like connecting portion that described round plate is connected with slewing equipment by revolution;
The described round plate of described rotating disk and described connecting portion are formed by silicon nitride or the material that comprises silicon nitride.
4. thermoelectric material manufacturing installation as claimed in claim 3 is characterized in that: described rotating disk is by the chemical formula Si of Z≤3.8
6-zN
8-zAl
zO
zThe β silicon aluminum oxygen nitrogen heat-stable ceramic of expression is made.
5. as claim 3 or 4 described thermoelectric material manufacturing installations, it is characterized in that: described apparatus for pouring is a funnel.
6. as claim 3 or 4 described thermoelectric material manufacturing installations, it is characterized in that: described apparatus for pouring is the sprue gate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000262302 | 2000-08-31 | ||
| JP262302/2000 | 2000-08-31 |
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| Publication Number | Publication Date |
|---|---|
| CN1340866A CN1340866A (en) | 2002-03-20 |
| CN1330012C true CN1330012C (en) | 2007-08-01 |
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|---|---|---|---|
| CNB011251611A Expired - Lifetime CN1330012C (en) | 2000-08-31 | 2001-08-30 | Manufacture device for powder thermoelectric material and manufacture method for powder thermoelectric material using the said device |
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| CN104797077B (en) * | 2015-04-09 | 2017-07-11 | 哈尔滨工程大学 | A kind of circuit board radiating device of downhole water flow regulator |
| CN107350477A (en) * | 2017-08-30 | 2017-11-17 | 湖南顶立科技有限公司 | A kind of powder preparing unit |
| CN108856724A (en) * | 2018-07-23 | 2018-11-23 | 湖南宁乡吉唯信金属粉体有限公司 | Preparation method of aluminum alloy powder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0734102A (en) * | 1993-07-22 | 1995-02-03 | Daido Steel Co Ltd | Production of metal powder |
| US5814573A (en) * | 1995-01-30 | 1998-09-29 | Ecc International Ltd. | Production of sialon |
-
2001
- 2001-08-30 CN CNB011251611A patent/CN1330012C/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0734102A (en) * | 1993-07-22 | 1995-02-03 | Daido Steel Co Ltd | Production of metal powder |
| US5814573A (en) * | 1995-01-30 | 1998-09-29 | Ecc International Ltd. | Production of sialon |
Non-Patent Citations (1)
| Title |
|---|
| Journal of Japan Thermal Spraying Society Tomio Satoh et al.,15.16,Application of Plasma Sprayed Ceramic Coatings to theBaseMaterials of the Rotating Disk in the CentrifugalAtomizationProcess 1992 * |
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| CN1340866A (en) | 2002-03-20 |
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