CN1325270C - Method of expanding fluid channel - Google Patents
Method of expanding fluid channel Download PDFInfo
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- CN1325270C CN1325270C CNB2003101237177A CN200310123717A CN1325270C CN 1325270 C CN1325270 C CN 1325270C CN B2003101237177 A CNB2003101237177 A CN B2003101237177A CN 200310123717 A CN200310123717 A CN 200310123717A CN 1325270 C CN1325270 C CN 1325270C
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- fluid passage
- preparation
- sacrifice layer
- fluid
- expansion fluid
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Abstract
The present invention provides a manufacture method for expanding a fluid passage. The method comprises the following steps: one silicon substrate which is provided with one first surface and one second surface is provided, subsequently, one patterned sacrificial layer is formed on the first surface of the substrate, then, one structure layer is formed on the first surface of the substrate and covers the patterned sacrificial layer, subsequently, the second surface of the substrate is photoetched and etched to form a fluid passage and expose the sacrificial layer, part of the sacrificial layer is removed to form one first fluid cavity, finally, the outlet ends of the first fluid cavity and the fluid passage are expanded, and the rest part of the sacrificial layer is removed to form one second fluid cavity. The present invention obtains the aim of enlarging the outlet ends of the fluid passage by using the etching step of many times towards the sacrificial layer under the condition that the size of the inlet end of the fluid passage does not need to be changed.
Description
Technical field
The present invention relates to a kind of fluid ejection apparatus and preparation method thereof, particularly a kind of multistage sacrifice layer removal and anisotropic etch techniques utilized is to reach the fluid ejection apparatus preparation method of expansion fluid passage.
Background technology
At present fluid ejection apparatus applies on the elements such as ink gun, fuel injector mostly, the wherein a large amount of especially use heat of the ink gun bubble type design that becomes.
Fig. 1 shows a kind of fluid ejection apparatus 1 of single petrochemical industry of existing U.S. Patent number 6,102,530, its with a silicon base 10 as body, and on silicon base 10, form a structure sheaf 12, and between silicon base 10 and structure sheaf 12, form a fluid cavity 14, in order to hold fluid 26; And on structure sheaf 12, be provided with a primary heater 20 and a secondary heater 22, primary heater 20 is in order to produce one first bubble 30 in fluid cavity 14, secondary heater 22 is in order to produce one second bubble 32, so that the fluid in the fluid cavity 14 26 is penetrated in fluid cavity 14.
Fluid ejection apparatus 1 making step of above-mentioned single petrochemical industry is in regular turn: provide a wafer as silicon base 10, and form a structure sheaf 12 on silicon base 10, and form a sacrificial patterned between silicon base 10 and structure sheaf 12.Then, fluid actuator is set on structure sheaf 12.Then, on structure sheaf 12, form a protective layer.Afterwards anisotropic etching is carried out at the silicon base back side, exposed until sacrifice layer, to form the fluid passage.Remove sacrifice layer and again silicon base is carried out anisotropic etching, to obtain a fluid cavity that enlarges.At last, etch protection layer, structure sheaf form a through hole that is interconnected in regular turn, and wherein through hole is communicated with fluid cavity.
Yet, in the preparation method of the fluid ejection apparatus of existing single petrochemical industry, usually with the surface be＜100〉direction silicon single crystal wafer as substrate, when carrying out anisotropic etching, can form side and substrate surface along its lattice direction be 54.7 to spend the tetragonal pyramid of the angles of cut.Above-mentioned making flow process can provide single petrochemical fluids channel design to make, but relative also because silicon wafer in the characteristic of anisotropic etching, also makes the port of export of fluid passage and the size of arrival end enlarge when enlarging the fluid passage.If fluid passage arrival end size enlarges, then can reduce the arranging density of crystal grain and cause the structural strength of fluid ejection apparatus to reduce.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of multistage sacrifice layer removal and anisotropic etching step utilized, under the condition that does not increase fluid passage arrival end size, reach the preparation method of expansion fluid channel outlet.
According to above-mentioned purpose, the invention provides a kind of preparation method of expansion fluid passage, comprise the following steps: to provide a substrate, have one first and one second, and this second with respect to this first; Form a sacrificial patterned on first of this substrate; Form a structure sheaf and go up and cover this sacrificial patterned in first of this substrate; Impose photoetching and etch process second, to form a fluid passage, to expose this sacrifice layer in this substrate; Remove this sacrifice layer of part to form a first-class body cavity; The port of export of this first-class body cavity and fluid passage increases; And this sacrifice layer of removal remainder is to form one second fluid cavity.
In a preferred embodiment, comprise more that wherein forming a fluid actuation element, one drive circuit connects this fluid-actuated element and a protective layer and cover this fluid-actuated element and this drive circuit on this structure sheaf.
The material that will be appreciated that sacrifice layer is borosilicic acid phosphorus glass (BPSG), silicic acid phosphorus glass (PSG) or silica.And the material of structure sheaf is the silicon nitride (SiON) of low stress.
In another preferred embodiment, wherein increase the port of export step of this first-class body cavity and fluid passage with potassium hydroxide (KOH) solution, tetramethyl aqua ammonia (Tetramethyl AmmoniumHydroxide, TMAH) (Ethylene Diamine Pyrochatechol, EDP) solution carries out anisotropic etching for solution or ethylene diamine pyrocatechol.
In another preferred embodiment, more comprise with above-mentioned solution and carry out wet etching, with the second fluid cavity step that increases.
In another preferred embodiment, removing the partial sacrifice layer reaches with dry etching steps with this step that forms first-class body cavity.
In another preferred embodiment, this sacrifice layer step of removing remainder is reached with dry etching steps.
In another preferred embodiment, more comprise the etch structures layer to form a spray orifice that is communicated with second fluid cavity, wherein fluid is used through spray orifice and is broken away from fluid ejection apparatus.
Following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the schematic diagram of the fluid ejection apparatus of existing single petrochemical industry; And
Fig. 2～7 show multistage sacrifice layer removal and the anisotropic etching of utilizing of the present invention, to reach the fluid ejection apparatus preparation method in expansion fluid chamber.
Description of reference numerals
Prior art part (Fig. 1)
1～existing fluid ejection apparatus; 10～silicon base; 12～structure sheaf; 14～fluid cavity; 20～primary heater; 22～secondary heater; 26～fluid.
The present invention's part (Fig. 2～7)
100～monocrystal silicon substrate; First of 1001～substrate; Second of 1002～substrate; 101～silicon oxynitride (SiON) layer; 105～opening; 110～sacrifice layer; 120～structure sheaf; 130～fluid actuator; 140～signal transmission lines; 150～protective layer; 155～signal transmission lines opening; The pre-opening of 160～spray orifice; 165～spray orifice; 500～fluid passage; 500b～fluid passage the port of export; 600a～first-class body cavity; The first-class body cavity of 600b～expansion; 600c～second fluid cavity.
The specific embodiment
Fig. 2～7 of the present inventionly utilize multistage sacrifice layer to remove and anisotropic etch techniques for showing, with the fluid ejection apparatus preparation method of the port of export that reaches the expansion fluid passage.See also Fig. 2, a substrate 100 is provided, have one first 1001 and 1 second 1002, and this second with respect to this first, for example a monocrystal silicon substrate.Form a sacrificial patterned 110 on first of monocrystal silicon substrate 100.Sacrifice layer 110 can be borosilicic acid phosphorus glass (BPSG), silicic acid phosphorus glass (PSG) or other silica materials.Then, compliance forms a pattern structure layer 120 in substrate 100, and overlay pattern sacrifice layer 110.Structure sheaf 120 can be by silicon oxynitride (SiON) layer of the formed low stress of chemical vapour deposition technique (CVD), and its stress is good between 100～20,000 ten thousand handkerchiefs (MPa).In this simultaneously, on second 1002 of monocrystal silicon substrate, also form silicon oxynitride (SiON) layer 101 of a low stress.
In a preferred embodiment, comprise more that wherein formation one fluid actuation element 130, a signal transmission lines 140 connect fluid-actuated elements 130 and a protective layer 150 covering fluid actuation elements 130 and signal transmission lines 140 on structure sheaf 120.At first, form a patterned electricity resistance layer 130 on structure sheaf 120, with as heater.The resistance series of strata are by physical vaporous deposition (PVD), and for example evaporation, sputtering method or reactive sputtering method form as HfB
2, TaAl, TaN or other resistance materials.
Then, with physical vaporous deposition (PVD) deposition one patterned conductive layer 140, for example Al, Cu, AlCu or other conductor materials are to form a signal transmission lines.Then, form a protective layer 150, for example silicon nitride in this substrate, covers separation layer and signal transmission lines.Above-mentioned protective layer 150 comprises that an opening 155 connects fluid-actuated element 130 and outside flexible circuit board (not shown).
See also Fig. 3, define an opening 105, to manifest second of monocrystal silicon substrate 100 in the silicon oxynitride (SiON) of low stress layer 101.Opening 105 can be used as when forming the fluid passage step, the hard mask of etching monocrystal silicon substrate 100.The size of opening 105 and be equivalent to the size of fluid passage arrival end.
See also Fig. 4, utilize wet etch method etching substrate 100 second, forming a fluid passage 500, and expose sacrifice layer 110.In a preferred embodiment, wherein wet etch step is with potassium hydroxide (KOH) solution, tetramethyl aqua ammonia (Tetramethyl Ammonium Hydroxide, TMAH) (Ethylene Diamine Pyrochatechol, EDP) solution carries out wet etching for solution or ethylene diamine pyrocatechol.
See also Fig. 5, the sacrifice layer 110 that utilizes the wet etch method etching part is to form a first-class body cavity 600a.Etched partial sacrifice series of strata are factor of determination with HF solution or the etching of BOE solution and with the etching period.The amount of etching part sacrifice layer is in order to the size of the decision fluid passage port of export.
See also Fig. 6, the monocrystal silicon substrate surface and the first-class body cavity 600a that utilize the wet etch method etching to manifest are to form a first-class body cavity 600b who enlarges.In this simultaneously, fluid passage 500 ports of export are also extended to be the size of being desired.When monocrystal silicon substrate surface that etching manifests and first-class body cavity 600a, be to be factor of determination with the etching period.Long etching period can cause the sphering effect of the monocrystal silicon substrate interplanar angle of cut, and fluid cavity is excessively increased, and causes fluid when spraying, the mutual interference of adjacent fluid chambers phase.In a preferred embodiment, wherein wet etch step system is with potassium hydroxide (KOH) solution, tetramethyl aqua ammonia (Tetramethyl Ammonium Hydroxide, TMAH) (Ethylene Diamine Pyrochatechol, EDP) solution carries out wet etching for solution or ethylene diamine pyrocatechol.
In a preferred embodiment, the step of removing partial sacrifice layer and amplification segment fluid flow passage can repeat more than twice, and the number of times of repetition is decided by the size of fluid passage port of export 500b.
See also Fig. 7, the sacrifice layer 110 that utilizes wet etch method etching remainder is to form one second fluid cavity 600c.The etching remainder is sacrificed series of strata with HF solution or the etching of BOE solution.In a preferred embodiment, can utilize potassium hydroxide (KOH) solution, tetramethyl aqua ammonia (TetramethylAmmonium Hydroxide, TMAH) solution or ethylene diamine pyrocatechol (Ethylene DiaminePyrochatechol, EDP) solution etching, when increasing second fluid cavity, making fluid passage port of export 500b extended is the size of being desired.
To form a spray orifice 165, be communicated with this second fluid cavity 600c along this structure sheaf 120 of opening 160 etchings, wherein fluid is used through this spray orifice and is broken away from injection apparatus.It is plasma etching, chemical gas etching, reactive ion etching or laser-induced thermal etching technology that preferred spray orifice forms step.So far, finish and utilize multistage sacrifice layer to remove and the anisotropic etching step, reach the single petrochemical fluid jet device of expansion fluid channel outlet.
Feature of the present invention and effect are to provide a kind of and utilize multistage sacrifice layer to remove and anisotropic etching, under the condition that does not increase fluid passage arrival end size, reach the preparation method of the port of export of expansion fluid passage.
Therefore, utilize multistage sacrifice layer to remove and anisotropic etching, carry out the preparation method of expansion fluid passage, when enlarging the fluid passage port of export, can't enlarge the size of fluid passage arrival end, and then increase the arranging density of crystal grain and the structural strength of improving fluid ejection apparatus integral body.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention, and when can doing to change and retouching, so protection scope of the present invention is when being as the criterion so that appended claim is determined.
Claims (17)
1. the preparation method of an expansion fluid passage comprises the following steps:
One substrate is provided, has one first and one second, and this second with respect to this first;
Form a sacrificial patterned on first of this substrate;
Form a structure sheaf and go up and cover this sacrificial patterned in first of this substrate;
Along second this substrate of eating thrown of this substrate, connect this sacrifice layer to form a fluid passage;
Remove this sacrifice layer of part to form a first-class body cavity;
The port of export of this first-class body cavity and fluid passage increases; And
This sacrifice layer of removing remainder is to form second fluid cavity.
2. the preparation method of expansion fluid passage as claimed in claim 1 comprises also that wherein forming a fluid actuation element, one drive circuit connects this fluid-actuated element and a protective layer and cover this fluid-actuated element and this drive circuit on this structure sheaf.
3. the preparation method of expansion fluid passage as claimed in claim 1, wherein the material of this sacrifice layer is borosilicic acid phosphorus glass, silicic acid phosphorus glass or silica material.
4. the preparation method of expansion fluid passage as claimed in claim 1, wherein the material of this structure sheaf is a silicon oxynitride.
5. the preparation method of expansion fluid passage as claimed in claim 1, this step that wherein forms this fluid passage is reached with wet etch step.
6. the preparation method of expansion fluid passage as claimed in claim 5, wherein this wet etch step is carried out wet etching with potassium hydroxide solution, tetramethyl Dilute Ammonia Solution or ethylene diamine pyrocatechol solution.
7. the preparation method of expansion fluid passage as claimed in claim 1 is wherein removed the partial sacrifice layer and is reached with wet etch step with this step that forms first-class body cavity.
8. the preparation method of expansion fluid passage as claimed in claim 7, wherein this wet etch step is with the etching of HF solution.
9. the preparation method of expansion fluid passage as claimed in claim 1 is wherein removed the partial sacrifice layer and is reached with dry etching steps with this step that forms first-class body cavity.
10. the preparation method of expansion fluid passage as claimed in claim 1, the step of the port of export of wherein increase this first-class body cavity and fluid passage is reached with wet etch step.
11. the preparation method of expansion fluid passage as claimed in claim 10, wherein this wet etch step is carried out wet etching with potassium hydroxide solution, tetramethyl Dilute Ammonia Solution or ethylene diamine pyrocatechol solution.
12. the preparation method of expansion fluid passage as claimed in claim 1 is wherein removed this sacrifice layer step of remainder and is reached with wet etch step.
13. the preparation method of expansion fluid passage as claimed in claim 12, wherein this wet etch step is with the etching of HF solution.
14. the preparation method of expansion fluid passage as claimed in claim 1 is wherein removed this sacrifice layer step of remainder and is reached with dry etching steps.
15. the preparation method of expansion fluid passage as claimed in claim 1 wherein also comprises and carries out wet etching with the second fluid cavity step that increases.
16. the preparation method of expansion fluid passage as claimed in claim 1 implements to remove this sacrifice layer of part to form fluid cavity and the fluid cavity of this part that increases and the port of export of fluid passage of part comprising repeating.
17. the preparation method of expansion fluid passage as claimed in claim 1 comprises also that wherein this structure sheaf of etching to form a spray orifice, is communicated with this second fluid cavity, wherein fluid is used through this spray orifice and is broken away from injection apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101237177A CN1325270C (en) | 2003-12-23 | 2003-12-23 | Method of expanding fluid channel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101237177A CN1325270C (en) | 2003-12-23 | 2003-12-23 | Method of expanding fluid channel |
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| Publication Number | Publication Date |
|---|---|
| CN1631672A CN1631672A (en) | 2005-06-29 |
| CN1325270C true CN1325270C (en) | 2007-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2003101237177A Expired - Fee Related CN1325270C (en) | 2003-12-23 | 2003-12-23 | Method of expanding fluid channel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8562845B2 (en) | 2006-10-12 | 2013-10-22 | Canon Kabushiki Kaisha | Ink jet print head and method of manufacturing ink jet print head |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000198205A (en) * | 1998-12-10 | 2000-07-18 | Samsung Electronics Co Ltd | Fluid jetting apparatus and production thereof |
| CN1420020A (en) * | 2001-11-16 | 2003-05-28 | 明基电通股份有限公司 | Integral ink-jet printhead and ink feeding method |
| TW552200B (en) * | 2002-07-12 | 2003-09-11 | Benq Corp | Fluid injection device and its manufacturing method |
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2003
- 2003-12-23 CN CNB2003101237177A patent/CN1325270C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000198205A (en) * | 1998-12-10 | 2000-07-18 | Samsung Electronics Co Ltd | Fluid jetting apparatus and production thereof |
| CN1420020A (en) * | 2001-11-16 | 2003-05-28 | 明基电通股份有限公司 | Integral ink-jet printhead and ink feeding method |
| TW552200B (en) * | 2002-07-12 | 2003-09-11 | Benq Corp | Fluid injection device and its manufacturing method |
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| CN1631672A (en) | 2005-06-29 |
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