CN1325268C - Fluid jetting device and its manufacturing method - Google Patents
Fluid jetting device and its manufacturing method Download PDFInfo
- Publication number
- CN1325268C CN1325268C CNB2003101237181A CN200310123718A CN1325268C CN 1325268 C CN1325268 C CN 1325268C CN B2003101237181 A CNB2003101237181 A CN B2003101237181A CN 200310123718 A CN200310123718 A CN 200310123718A CN 1325268 C CN1325268 C CN 1325268C
- Authority
- CN
- China
- Prior art keywords
- substrate
- manufacture method
- ejection apparatus
- fluid ejection
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention discloses a fluid jet device and a manufacturing method thereof. The device comprises a first base, a second base, a branch pipe, a fluid cavity and a plurality of spray holes, wherein the first base has a first lattice arrangement direction, the second base is glued on the first base, the second base has a second lattice arrangement direction, the first lattice arrangement direction is different from the second lattice arrangement direction, the branch pipe penetrates through the first base and the second base, the fluid cavity is formed on the second base and is communicated with the branch pipe, and the spray holes are communicated with the fluid cavity. The present invention also discloses the manufacturing method of the fluid jet device.
Description
Technical field
The relevant a kind of semiconductor device of the present invention, particularly relevant a kind of fluid ejection apparatus and manufacture method thereof.
Background technology
In the technology of silicon wafer now, regular meeting utilizes the strong alkali solution of tetramethylammonium hydroxide (TMAH), potassium hydroxide (KOH) or NaOH (NaOH) etc. as the etching solution in the etch process.This type of solution has different etching performances for the different crystalline plane of silicon single crystal body, though etching performance meeting has a little difference with the difference of kind, concentration or the etch temperature of etching solution, but substantially to the rate of etch of different crystal surfaces, exist (111)＜characteristic of (110)＜(100), especially the rate of etch of (111) is far smaller than other crystalline plane.
Please refer to Fig. 1 and Fig. 2, the etching performance of strong basicity etching solution to different crystalline plane wafers is described.Figure 1 shows that etching result to (100) wafer, it can form the anisotropic etching track that an angle is 54.7 degree in substrate 10, shown in Figure 2 then is etching result to (111) wafer, and it can form an anisotropic etching track that is vertical angle in substrate 10.
Therefore, when making fluid ejection apparatus, penetrate wafer from behind when forming the behind etch process of hole, if using crystalline plane is the wafer of (100), with the manifold that causes a back side perforate much larger than positive stenosis, for example a manifold stenosis only has 200 microns ink discharge device substantially, its perforate behind promptly can be because of the cause of etching performance, be expanded to 1,100～1,200 microns width substantially, the drop of this very big ratio, also represent the manifold that is made according to crystalline plane (100), can occupy the very big area in wafer bottom, reduce other available scopes.
In addition in the assembling of ink gun, chip back surface also must have enough spaces to be used for gluing, so that black casket and wafer are combined closely, in general, the gluing district that both sides kept, about each 1,200 micron substantially, satisfy backside openings together with above-mentioned manifold, single-wafer must provide the space of 3,500～3,600 microns of cardinal principles at least, give the making of fluid ejection apparatus, certain degree has reduced the utilizability of wafer at bottom area.
In order to dwindle the area that manifold occupies the wafer bottom, have on the industry and change with the wafer of crystalline plane (111) way as the etching substrate, though but can reduce the width (because it is the etching performance of vertical angle) in backside openings district in good time, but can produce the manifold shapes deflection, and then cause the difficult problem of fluid cavity shape control, have a strong impact on the ink-jet effect of this device.
Existing fluid ejection apparatus can be illustrated referring to Fig. 3.This fluid ejection apparatus is based on a silicon substrate 10, and manifold (manifold) 20 is in order to carry fluid; Fluid cavity (chamber) 30 is located at the both sides of manifold 20 upper ends, in order to hold this fluid; A plurality of spray orifices (nozzle) 40 are located at the surface of fluid cavity 30, use for this fluid ejection.
According to the design of technique of above liquor ejecting device, manifold 20 presents a low wide and up narrow shape, causes the back side perforate of manifold 20 to occupy a lot of wafer floor space, reduces the effective utilization of wafer area.
The method of making fluid ejection apparatus in addition traditionally is as follows, sees also Fig. 4 a and Fig. 4 b.Shown in Fig. 4 a, a substrate 10 is provided, a silicon base for example, its lattice arrangement direction is (100).Form a sacrificial patterned 20 in this substrate 10, sacrifice layer 20 is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, wherein is preferred the selection with the phosphorosilicate glass.Then, form a pattern structure layer 30 in this substrate 10, and cover this sacrificial patterned 20, structure sheaf 30 can be for by the formed silicon oxynitride layer of chemical vapour deposition technique (CVD).
Then form a patterned electricity resistance layer 40 on this structure sheaf 30, for example to be heater as actuator, resistive layer 40 is by HfB
2, TaAl, TaN or TiN constitute.Then, form a pattern isolated layer 50, cover this substrate 10 and structure sheaf 30, and form a heater contact hole 45, afterwards, form a patterned conductive layer 60 on this structure sheaf 30, and insert heater contact hole 45, to form a signal transmission lines 62.At last, form a protective layer 70 on this separation layer 50 and this conductive layer 60, and in protective layer 70, form a signal transmission lines contact hole 75, conductive layer 60 is exposed, in order to follow-up packaging operation.
Then; see also Fig. 4 b, with wet etch method, for example with potassium hydroxide solution; the back side of etching substrate 10; forming a manifold 80, and expose sacrifice layer 20, afterwards; again with hydrofluoric acid (HF) solution etch sacrificial layer 20 to form a fluid cavity 90; at last, etch protection layer 70, separation layer 50 and structure sheaf 30 in regular turn are to form a spray orifice 95 that is communicated with fluid cavity 90.So far, promptly finish the making of a fluid injection apparatus.
Select the wafer of lattice arrangement direction for use, when making manifold 80, because this specific lattice arrangement for (100), make manifold 80 structures that in substrate 10, form, present a low wide and up narrow shape, and the wide opening part of manifold 80 structures demonstrates promptly and occupies too much wafer floor space.
Summary of the invention
In view of this, the objective of the invention is to disclose a kind of fluid ejection apparatus, the setting of its mat double base reaches opening size that effectively dwindles manifold and the effect of controlling the fluid cavity shape.
In order to reach above-mentioned purpose, the invention provides a kind of fluid ejection apparatus, comprise: one first substrate, has one first lattice arrangement direction, one second substrate is bonding in this first substrate, and has one second lattice arrangement direction, and this first lattice arrangement direction is different from this second lattice arrangement direction, one manifold passes this first substrate and this second substrate, a fluid cavity, be formed at this second substrate, and be communicated with this manifold, and a plurality of spray orifice, be communicated with this fluid cavity, wherein, the rate of etch of the crystalline plane of this first substrate is less than the rate of etch of the crystalline plane of this second substrate.
Combination Design according to the different crystalline plane substrates of the present invention, make when being etched with the formation manifold structure, for example meeting with earlier, crystalline plane is (111), track-etched is the wafer of vertical angle, dwindled the size of chip back surface open region, and etching when for example crystalline plane is the wafer of (100) more thereafter, since the difference of etching performance, the effective control that then can reach the fluid cavity shape.
The present invention provides a kind of manufacture method of fluid ejection apparatus in addition, comprise the following steps: to provide one first substrate, this first substrate has one first lattice arrangement direction, bind one second substrate in this first substrate, and this second substrate has one second lattice arrangement direction, and this first lattice arrangement direction is different from this second lattice arrangement direction, and the rate of etch of the crystalline plane of this first substrate is less than the rate of etch of the crystalline plane of this second substrate.Then form a sacrificial patterned in this second substrate, this sacrificial patterned is as a predetermined zone that forms at least one fluid cavity.
Then, form a pattern structure layer in this second substrate, and cover this sacrificial patterned.The continuous manifold that forms passes this first substrate and this second substrate, and exposes this sacrificial patterned.Afterwards, remove this sacrifice layer, forming this fluid cavity, and this fluid cavity of etching, to enlarge the volume of this fluid cavity, make this fluid cavity occupy this second substrate.At last, this structure sheaf of etching is to form at least one spray orifice that is communicated with this fluid cavity.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 to 2 is the etching performance schematic diagram of different crystalline plane;
Fig. 3 is the generalized section of conventional fluid injection apparatus structure;
Fig. 4 a to 4b is the generalized section of conventional fluid injection apparatus technology; And
Fig. 5 a to 5c is according to one embodiment of the invention, the generalized section of fluid ejection apparatus technology.
Description of reference numerals
Existing part (Fig. 1 to Fig. 3)
10～substrate; 20～manifold; 30～fluid cavity; 40～spray orifice.
Existing part (Fig. 4 a to Fig. 4 b)
10～substrate; 20～sacrifice layer; 30～structure sheaf; 40～resistive layer; 45～heater contact hole; 50～separation layer; 60～conductive layer; 62～signal transmission lines; 70～protective layer; 75～signal transmission lines contact hole; 80～manifold; 90～fluid cavity; 95～spray orifice.
Embodiment of the invention part (Fig. 5 a to Fig. 5 c)
500～the first substrates; 510～the second substrates; 520～sacrifice layer; 530～structure sheaf; 540～resistive layer; 550～separation layer; 555～heater contact hole; 560～conductive layer; 570～protective layer; 580～signal transmission lines contact hole; 590～manifold; 600～fluid cavity; 610～spray orifice.
The specific embodiment
Embodiment
See also Fig. 5 a to 5b, one embodiment of the invention are described, the making of fluid ejection apparatus.At first, shown in Fig. 5 a, provide one first substrate 500 and one second substrate 510, wherein first substrate 500 for example is a silicon base, and its lattice arrangement direction is (111), and second substrate 510 for example is a silicon base, and its lattice arrangement direction is (100).The thickness proportion of first substrate 500 and second substrate 510, approximately between 10: 1, the thickness of first substrate 500 is approximately between 500～675 microns, and second substrate, 510 thickness are approximately between 30～50 microns.
Above-mentioned second substrate 510 is bonding in first substrate 500, and the bonding mode comprises that direct bonding mode and medium bind mode, and the reaction temperature of wherein directly binding mode approximately reaches more than 1000 degree Celsius, and the medium in the medium bonding mode is an oxide in addition.
Then, shown in Fig. 5 b, form a sacrificial patterned 520 one first last 5001 in second substrate 510, sacrifice layer 520 is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, wherein be preferred the selection with the phosphorosilicate glass, the thickness of sacrifice layer 520 is approximately between 5,000～20,000 dust.And as a predetermined zone that forms at least one fluid cavity.
Then form a pattern structure layer 530 in second substrate 510, and overlay pattern sacrifice layer 520, structure sheaf 530 can be for by the formed silicon oxynitride layer of chemical vapour deposition technique (CVD), and the thickness of structure sheaf 530 is substantially between 0.5～2 micron.In addition, structure sheaf 530 is a low stress material, and its stress value is substantially between 50～20,000 ten thousand handkerchiefs (MPa).
Then, form a patterned electricity resistance layer 540 on structure sheaf 530, to be heater for example as ejection actuators (actuator), fluid is driven via jet actuator after, by the spray orifice ejection of follow-up making, resistive layer 540 is by HfB
2, TaAl, TaN or TiN constitute, and wherein are preferred the selection with TaAl.
Form a pattern isolated layer 550 again, covered structure layer 530 and formation heater contact hole 555 afterwards, form a patterned conductive layer 560 on separation layer 550, and insert heater contact hole 555, to form the signal transmission lines.At last, form a protective layer 570 in second substrate 510, cover separation layer 550 and conductive layer 560, and in protective layer 570, form signal transmission lines contact hole 580, conductive layer 560 is exposed, in order to follow-up packaging operation.
Next, see also Fig. 5 c, begin to carry out a series of etch process, to form final fluid ejection apparatus.At first, with anisotropic wet etch method, etching solution for example is tetramethylammonium hydroxide (TMAH), potassium hydroxide (KOH) or NaOH (NaOH) solution, the back side of etching first substrate 500, and promptly one second 5002, to begin to form the structure of a manifold 590.
Because the substrate combination of different crystalline plane, make when being etched with formation manifold 590 structures, can meet with crystalline plane earlier is (111), track-etched is first substrate 500 of vertical angle, and this etching performance, promptly show the size of obviously having reduced first substrate, 500 backside openings districts than prior art, significantly promote first substrate, 500 its available scopes in bottom.
Then etching crystalline plane again is second substrate 510 of (100), to finish the making of manifold 590 complete structures, behind this section etching step, owing to be different from the former etching performance, makes the control to subsequent flows body cavity 600 shapes, and tool is benefited greatly.After manifold 590 was finished making, its structure was passed first substrate 500 and second substrate 510, and exposes sacrifice layer 520.
The narrow opening width of manifold 590 is substantially between 90～200 microns, and the width of backside openings needs the space of 1,100～1,200 microns of cardinal principles to compare substantially between 150～300 microns with existing backside openings at least, reduces a lot of really.Manifold 590 is interconnected with a fluid accumulator tank downwards in addition.
Follow wet etch method with hydrofluoric acid containing (HF) solution, etch sacrificial layer 520, afterwards, for example be the wet etch method of potassium hydroxide (KOH) solution once again with alkaline etching liquid, etch sacrificial layer 520 enlarging the zone that sacrifice layer 520 is emptied, and forms fluid cavity 600, fluid cavity 600 promptly occupies the space of second substrate 510 after etching solution is enlarged volume.
At last, etch protection layer 570, separation layer 550 and structure sheaf 530 in regular turn, forming the spray orifice 610 that is communicated with fluid cavity 600, and fluid cavity 600 is communicated with above-mentioned manifold 590.The making of spray orifice 610 is to utilize the method for laser or reactive ion bombardment to make.So far, promptly finish the making of a fluid injection apparatus.
If every single fluid cavity be designed to resolution 300dpi (dpi (dots per inch): dot perinch), but the present embodiment dislocation between each current drainage body cavity of mat is in addition arranged, injection density is increased to 600～1,200dpi, and reach the effect of quicker injection fluid in the unit interval, but this technology is not an emphasis of the present invention, does not then give unnecessary details at this.
The present invention utilizes the double base of bonding, improve in the prior art on the one hand, the manifold backside openings occupies the problem of too much area of base, aspect in addition, owing to can keep manifold and fluid cavity junction originally, the node configuration of 54.7 degree that tilt, the fluid cavity that is made after also making it, tool preferred construction shape is with the effect of stabilized fluid ejection.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention, and when can doing to change and retouching, so protection scope of the present invention is when being as the criterion so that appended claim is determined.
Claims (40)
1. fluid ejection apparatus comprises:
One first substrate has one first lattice arrangement direction;
One second substrate is bonding in this first substrate, and has one second lattice arrangement direction, and this first lattice arrangement direction is different from this second lattice arrangement direction;
One manifold passes this first substrate and this second substrate;
One fluid cavity is formed at this second substrate, and is communicated with this manifold; And
A plurality of spray orifices are communicated with this fluid cavity,
Wherein, the rate of etch of the crystalline plane of this first substrate is less than the rate of etch of the crystalline plane of this second substrate.
2. fluid ejection apparatus as claimed in claim 1, wherein this first lattice arrangement direction is (111), and this second lattice arrangement direction is (100).
3. fluid ejection apparatus as claimed in claim 1, wherein this first substrate is a silicon base.
4. fluid ejection apparatus as claimed in claim 1, wherein this second substrate is a silicon base.
5. fluid ejection apparatus as claimed in claim 1, wherein the ratio of this first substrate thickness and this second substrate thickness is approximately 10: 1.
6. fluid ejection apparatus as claimed in claim 1, wherein the thickness of this first substrate is approximately between 500～675 microns.
7. fluid ejection apparatus as claimed in claim 1, wherein the thickness of this second substrate is approximately between 30～50 microns.
8. fluid ejection apparatus as claimed in claim 1, wherein the bonding mode of this first substrate and this second substrate comprises that direct bonding or medium bind.
9. fluid ejection apparatus as claimed in claim 8, wherein the medium material in this medium bonding mode is an oxide.
10. fluid ejection apparatus as claimed in claim 1, wherein the narrow opening width of this manifold is approximately between 160～200 microns.
11. fluid ejection apparatus as claimed in claim 1 comprises also that wherein at least one ejection actuators is positioned at this fluid cavity.
12. fluid ejection apparatus as claimed in claim 1 wherein also comprises a structure sheaf, a separation layer, a conductive layer and a protective layer in regular turn in this second substrate.
13. fluid ejection apparatus as claimed in claim 12, wherein this structure sheaf is made of the silicon oxynitride material.
14. fluid ejection apparatus as claimed in claim 12, wherein the thickness of this structure sheaf is approximately between 0.5～2 micron.
15. fluid ejection apparatus as claimed in claim 12, wherein this structure sheaf is constituted by a low stress material.
16. fluid ejection apparatus as claimed in claim 15, wherein this stress value is approximately between 50～20,000 ten thousand handkerchiefs.
17. the manufacture method of a fluid ejection apparatus comprises the following steps:
One first substrate is provided, and this first substrate has one first lattice arrangement direction;
Bind one second substrate in this first substrate, this second substrate has one second lattice arrangement direction, and this first lattice arrangement direction is different from this second lattice arrangement direction, and the rate of etch of the crystalline plane of this first substrate is less than the rate of etch of the crystalline plane of this second substrate;
Form a sacrificial patterned in this second substrate;
Form a pattern structure layer in this second substrate, and cover this sacrificial patterned;
Form a manifold, pass this first substrate and this second substrate, and expose this sacrificial patterned;
Remove this sacrifice layer, to form first-class at least body cavity;
This fluid cavity of etching is to enlarge the volume of this fluid cavity; And
Form at least one spray orifice,, and be communicated with this fluid cavity by this structure sheaf.
18. manufacture method as claimed in claim 17, wherein the first lattice arrangement direction is (111), and this second lattice arrangement direction is (100).
19. manufacture method as claimed in claim 17, wherein this first substrate is a silicon base.
20. manufacture method as claimed in claim 17, wherein this second substrate is a silicon base.
21. manufacture method as claimed in claim 17, wherein the ratio of this first substrate thickness and this second substrate thickness is approximately 10: 1.
22. manufacture method as claimed in claim 17, wherein the thickness of this first substrate is approximately between 500～675 microns.
23. manufacture method as claimed in claim 17, wherein the thickness of this second substrate is approximately between 30～50 microns.
24. manufacture method as claimed in claim 17, wherein the bonding mode of this first substrate and this second substrate comprises that direct bonding or medium bind.
25. manufacture method as claimed in claim 24, wherein the reaction temperature of this direct bonding mode is approximately more than 1,000 degree Celsius.
26. manufacture method as claimed in claim 24, wherein the medium material of this medium bonding mode is an oxide.
27. manufacture method as claimed in claim 17, wherein this sacrifice layer is made of boron-phosphorosilicate glass, phosphorosilicate glass or silica.
28. manufacture method as claimed in claim 17, wherein the thickness of this sacrifice layer is approximately between 0.5～2 micron.
29. manufacture method as claimed in claim 17, wherein this structure sheaf is made of silicon oxynitride.
30. manufacture method as claimed in claim 17, wherein the thickness of this structure sheaf is approximately between 0.5～2 micron.
31. manufacture method as claimed in claim 17, wherein this structure sheaf is constituted by a low stress material.
32. manufacture method as claimed in claim 31, wherein this stress value is approximately between 50～20,000 ten thousand handkerchiefs.
33. manufacture method as claimed in claim 17, wherein the narrow opening width of this manifold is approximately between 90～200 microns.
34. manufacture method as claimed in claim 17, the step that wherein forms this manifold is utilized anisotropic wet etch method.
35. manufacture method as claimed in claim 34, wherein the employed etching solution of this wet etch method is a potassium hydroxide.
36. manufacture method as claimed in claim 17, the step that wherein removes this sacrifice layer is utilized wet etch method.
37. manufacture method as claimed in claim 36, wherein the employed etching solution of this wet etch method is a hydrofluoric acid.
38. manufacture method as claimed in claim 17, wherein the step of this fluid cavity of etching is utilized wet etch method.
39. manufacture method as claimed in claim 38, wherein the employed etching solution of this wet etch method is a potassium hydroxide.
40. manufacture method as claimed in claim 17, the step that wherein forms this spray orifice is utilized the mode of laser or reactive ion bombardment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101237181A CN1325268C (en) | 2003-12-23 | 2003-12-23 | Fluid jetting device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101237181A CN1325268C (en) | 2003-12-23 | 2003-12-23 | Fluid jetting device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1631673A CN1631673A (en) | 2005-06-29 |
| CN1325268C true CN1325268C (en) | 2007-07-11 |
Family
ID=34844862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101237181A Expired - Fee Related CN1325268C (en) | 2003-12-23 | 2003-12-23 | Fluid jetting device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1325268C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5088487B2 (en) * | 2008-02-15 | 2012-12-05 | セイコーエプソン株式会社 | Liquid ejecting head and manufacturing method thereof |
| TWI494984B (en) * | 2010-07-21 | 2015-08-01 | United Microelectronics Corp | Semiconductor process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197732A (en) * | 1997-03-28 | 1998-11-04 | 莱克斯马克国际公司 | Ink jet printer nozzle plates having improved flow feature design |
| US20030058309A1 (en) * | 2000-09-05 | 2003-03-27 | Haluzak Charles C. | Fully integrated printhead using silicon on insulator wafer |
| US6622373B1 (en) * | 2000-08-28 | 2003-09-23 | Xiang Zheng Tu | High efficiency monolithic thermal ink jet print head |
-
2003
- 2003-12-23 CN CNB2003101237181A patent/CN1325268C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197732A (en) * | 1997-03-28 | 1998-11-04 | 莱克斯马克国际公司 | Ink jet printer nozzle plates having improved flow feature design |
| US6622373B1 (en) * | 2000-08-28 | 2003-09-23 | Xiang Zheng Tu | High efficiency monolithic thermal ink jet print head |
| US20030058309A1 (en) * | 2000-09-05 | 2003-03-27 | Haluzak Charles C. | Fully integrated printhead using silicon on insulator wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1631673A (en) | 2005-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6533399B2 (en) | Bubble-jet type ink-jet printhead and manufacturing method thereof | |
| US6890063B2 (en) | Ink-jet printhead and method of manufacturing the ink-jet printhead | |
| US8043517B2 (en) | Method of forming openings in substrates and inkjet printheads fabricated thereby | |
| US6499832B2 (en) | Bubble-jet type ink-jet printhead capable of preventing a backflow of ink | |
| EP1311395B1 (en) | Monolithic printhead with self-aligned groove and relative manufacturing process | |
| KR100433530B1 (en) | Manufacturing method for monolithic ink-jet printhead | |
| US7465404B2 (en) | Ink-jet printhead and method for manufacturing the same | |
| EP1407883B1 (en) | Monolithic ink-jet printhead with ink chamber defined by barrier wall and manufacturing method thereof | |
| CN1325268C (en) | Fluid jetting device and its manufacturing method | |
| EP1407884B1 (en) | Monolithic ink-jet printhead with metal nozzle plate and manufacturing method thereof | |
| US20040075722A1 (en) | Ink-jet printhead and method for manufacturing the same | |
| US20070105382A1 (en) | Fluid ejection device and method of fabricating the same | |
| US20050285906A1 (en) | Fluid injection device | |
| US6693045B2 (en) | High density wafer production method | |
| EP2091741B1 (en) | Method of forming openings in substrates | |
| KR100400228B1 (en) | Inkjet printhead and manufacturing method thereof | |
| US20050127028A1 (en) | Method for fabricating an enlarged fluid channel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |