CN1323398A - Magnetic sensor produced by constriction - Google Patents
Magnetic sensor produced by constriction Download PDFInfo
- Publication number
- CN1323398A CN1323398A CN 99812175 CN99812175A CN1323398A CN 1323398 A CN1323398 A CN 1323398A CN 99812175 CN99812175 CN 99812175 CN 99812175 A CN99812175 A CN 99812175A CN 1323398 A CN1323398 A CN 1323398A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- shrinking zone
- constriction
- state
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Abstract
The electric resistance of a magnetic constriction (M1, M2) varies if the magnetic status of one of the constriction sides changes. This resistance variation may exceed 100 % at room temperature. The invention proposes to use this effect to detect the magnetic status of a small magnetic particle, M3, as a magnetic storage bit, which affects the magnetic status on one side of the constriction (M1 in figure 2). The invention also proposes to read the magnetic status of a small particle, M3, by using the particle as one side of the constriction (figure 3).
Description
In decades, the magnetic storage bit is detected by the mode of electromagnetic induction always.Recently, giant magnetoresistance (GMR) effect has been used to the information that reads in magnetic memory apparatus.The stray magnetic field of magnetic storage bit can make the resistance of GMR sensor in the read head reduce several percentage points.Bit is more little, and the stray magnetic field that is produced is weak more, thereby requires between GMR sensor and the magnetic storage bit better adjacency is arranged.This point adds people for the requirement of reading information sooner, makes the GMR sensor must have higher sensitivity.The magnetic shrinking zone can provide much higher magneto resistive sensitivity, recently at Spain's the highest scientific research council mini system physics and nanometer technology laboratory (Laboratorio deFisica de Sistemas Pequenos y Nanotecnologia, Consejo Superiode Investigaciones Cientificas, Spain) experiment of being done has proved this point.What this laboratory had that some generally acknowledge leads the expert in field at shrinking zone quantum electricity.
Change the change that a part of magnetic state meeting in magnetic shrinking zone causes this shrinking zone resistance.This resistance changes and can surpass 100% under the room temperature.The present invention utilizes the close shrinking zone of this effect detection and influences the short grained magnetic state of magnetic of its magnetic state.
For practical application,, will utilize micron and nanofabrication technique to make the shrinking zone microminiaturization such as the information that reads magnetic memory bits.In the lecture experiment by will providing by the spuious place of magnetic memory bits in the magnetic field that provides of the coil of (no matter a left side or right bar) on one side around shrinking zone two parts.The stray magnetic field of so little magnetic memory bits just can change the magnetic state of a shrinking zone part, and this part of said shrinking zone should be less.
An alternatives that detects the magnetic state of magnetic storage bit is with the part of said magnetic storage bit as the shrinking zone itself.In this case, the magnetic storage bit should conduct electricity.
Two magnetic parts of shrinking zone are separated with an extremely thin non magnetic conductive material thin slice even can be more favourable.Said sheet thickness must be equivalent to or less than the electronics free path that is caused by spin redirect scattering.It is more extremely sensitive to the short grained magnetic state of the magnetic that will detect to expect that this is provided with the magnetic state that can make the shrinking zone.
Experimental demonstration
Fig. 1 is the experimental provision that is used to prove the resistance dramatical change.In order to form shrinking zone (2), regulating between two Metallic rod (1) electric current that monitor flows in the distance is crossed them.Coil on each Metallic rod (3) provides required magnetic field.Required instrument is: an I/V (current-voltage) converter (4), a function generator (5) and a digital oscilloscope (6).The signal of oscillograph recording I/V (current-voltage) converter promptly flows through the electric current of shrinking zone.The magnetic field that left side coil produces in first group of experiment is used for changing the magnetic state of left Metallic rod.
Fig. 2 is two Metallic rod being used to form shrinking zone experimental results when being nickel.Fig. 2 a is the electric current that flows through the shrinking zone that records, and Fig. 2 b is the magnetic field that left side coil produces.
Fig. 2 a shows that the variation of electric current in this special case is greater than 200%.
Apply the magnetic state that magnetic field changes right bar with the right coil and obtain similar result.
In Fig. 3, copper bar has replaced in above-mentioned two nickel bars, does not observe electric current when applying magnetic field and changes, and no matter magnetic field is added in the copper bar still is on the nickel bar.
Fig. 4 is in two Metallic rod one example when having the copper bar of nickel tip.Second Metallic rod is nickel, and the shrinking zone still is made of nickel like this.When apply with other situations under the same magnetic field during in the both sides, shrinking zone, we observe huge electric current again and change.This has proved that indivisible magnetic material just is enough to be detected.
In Fig. 5, two fine copper wires are bonded between two nickel bars across, make that like this shrinking zone is made of copper.In this case when apply with other situations under do not observe electric current during the same magnetic field and change.
We can be easy to distinguish the magnetic characteristic of the material that constitutes the shrinking zone by The above results.
Claims (4)
1, a kind of method that detects the magnetic state of magnetic shrinking zone is used to detect said magnetic state because magnetic state changes the magnetic shrinking zone changes in resistance that causes.
2, to the influence of magnetic shrinking zone magnetic state and then to the influence of shrinking zone resistance, the shrinking zone is used as the sensor of said externally-applied magnetic field by externally-applied magnetic field.
3, place near the resistance of the magnetic shrinking zone certain magnetic bodies such as the magnetic storage bit to be used to detect the magnetic state of said magnetic storage bit.(Fig. 2)
4, the magnetic shrinking zone can be contacted with a magnetic bodies by a magnetic conductor and constitute.The magnetic state of magnetic bodies influences the resistance of magnetic shrinking zone, and the resistance of magnetic shrinking zone is used to read the magnetic state of magnetic bodies.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ESP9802091 | 1998-10-08 | ||
| ES9802091A ES2154565B1 (en) | 1998-10-08 | 1998-10-08 | MAGNETIC SENSOR PRODUCED BY A CONSTRUCTION. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1323398A true CN1323398A (en) | 2001-11-21 |
| CN1145041C CN1145041C (en) | 2004-04-07 |
Family
ID=8305383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB998121754A Expired - Fee Related CN1145041C (en) | 1998-10-08 | 1999-10-01 | Magnetic sensor produced by constriction |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN1145041C (en) |
| AU (1) | AU6204099A (en) |
| ES (1) | ES2154565B1 (en) |
| WO (1) | WO2000022448A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2622020B1 (en) * | 1987-10-20 | 1990-02-02 | Thomson Csf | SUPERCONDUCTING MAGNETOMETRIC DEVICE |
| US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
| WO1997047982A2 (en) * | 1996-06-12 | 1997-12-18 | Philips Electronics N.V. | A magneto-resistive magnetic field sensor |
-
1998
- 1998-10-08 ES ES9802091A patent/ES2154565B1/en not_active Expired - Lifetime
-
1999
- 1999-10-01 WO PCT/ES1999/000315 patent/WO2000022448A1/en active Application Filing
- 1999-10-01 CN CNB998121754A patent/CN1145041C/en not_active Expired - Fee Related
- 1999-10-01 AU AU62040/99A patent/AU6204099A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000022448A1 (en) | 2000-04-20 |
| ES2154565B1 (en) | 2001-11-01 |
| AU6204099A (en) | 2000-05-01 |
| ES2154565A1 (en) | 2001-04-01 |
| CN1145041C (en) | 2004-04-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |