CN1322855A - Selective chemical plating process of preparing nanometer gap electrode - Google Patents
Selective chemical plating process of preparing nanometer gap electrode Download PDFInfo
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- CN1322855A CN1322855A CN 01113578 CN01113578A CN1322855A CN 1322855 A CN1322855 A CN 1322855A CN 01113578 CN01113578 CN 01113578 CN 01113578 A CN01113578 A CN 01113578A CN 1322855 A CN1322855 A CN 1322855A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Abstract
The present invention is method of preparing nanometer level electronic device. The preparation includes three steps, i.e., the step of common photoetching process to make required double-electrode structure device with electrodes of any metal material and substrate of silicon-base material; the second step of molecular assembly process to obtain exposed photosensitive thin layer with silicon-base material surface, dip coating process of forming one chemically plated primer layer and developing process of eliminating exposed self-assembled photosensitive layer while leaving the primer layer of metal material surface; and the third step of chemical plating process on the base of modulating primer layer figure to obtain double electrode structure device with nanometer size gap.
Description
The present invention is a kind of method of using the processing technology manufacturing nanoscale electric device of nanostructure, especially a kind of method for preparing nano-gap electrode with selective chemical plating.
One of main direction of Nano-technology Development is based on nano material and nanometer processing manufacturing technology and makes nano-device, and therefore develops its application aspect information technology, and in the application of biomedical aspect.Its huge potential advantages are generally acknowledged by common people gradually.
When preparation, the characterization technique of nano material obtained tremendous development, the nanometer processing manufacturing technology had also been made significant headway.This has laid good basis for constructing nano-device.But comparatively speaking, at present common nanometer processing is also very expensive, and general technology lacks popularization, has the obstacle of applying the aspect; Simultaneously, also there is very big development space in nanofabrication technique, can make full use of some novel materials and new principle and develop nanofabrication technique.
The method of definition nanofeature figure comprises electron-beam direct writing, extreme ultraviolet photolithographic, X linear light quarter, focused ion beam lithography etc. in the nanometer processing.One of mature methods is a direct electronic beam writing technology.The present best result of report in the world, mostly adopt photoetching can solve the problem of working efficiency, but since the high brightness X line source (mostly being synchrotron radiation light source at present) that needs can't popularize, in addition mask make special, alignment is also very difficult, has therefore also limited use.The present lithographic results of focused ion beam also has good report, but causes damage easily because high energy ion injects, and other influences reasons such as device performance, and use also can only be confined to certain scope.Current, extreme ultraviolet photolithographic has obtained large development, but aspect the nanostructure processing that obtains small scale more, also needs further research.Meanwhile, people also wish to search out some other method, and cost is smaller, and working efficiency increases, and comprises obtaining more better result.
Purpose of the present invention just provides a kind of key structure place in general photoetching circuit in conjunction with the method for selecting electroless plating, reaches the method that the selective chemical plating of realizing nanoscale two electrodes gap editing objective prepares nano-gap electrode.
Selective chemical plating of the present invention prepares the method for nano-gap electrode and mainly divides three steps:
The first step: the processing of initial two electrodes structure, promptly process the device of required two electrodes structure by general photoetching technique, wherein electrode is any metallic substance, substrate is a silica-base material;
Second step: the thin photosensitive layer that obtains the silica-base material surface that exposes on the surface of the two electrodes structure of above processing by the group of molecules packing technique, be coated with last layer electroless plating initiator layer at the entire device upper surface by dipping process again, remove by the self-assembly photoactive layer that developing process will expose, only stay the initiator layer of metal material surface;
The 3rd step: on the basis of modulation initiator layer pattern, carry out electroless plating in original electrode surface deposition and layer of metal film (5), obtain the two electrodes structure devices of nano-scale gap.
Metallic substance is gold or silver or copper, and silica-base material is silicon-dioxide or silicon nitride.Electroless plating initiator layer is a Palladous chloride.
The invention has the advantages that:
1. can more easily realize having the two electrodes structure of nanoscale.
2. method is simple, need not high equipment input and reaches the purpose of nanometer processing.
3. Zhi Bei method has universality, is included on the initial two electrodes structure nano double electrode structure that (being generally micron or submicron gap) obtains the adjustable gaps of many other materials.
To be the present invention process the synoptic diagram of required two electrodes structure by general photoetching technique to Fig. 1, figure la be among Fig. 1 A-A to the sectional structure synoptic diagram.
To be the present invention obtain the structural representation of the thin photosensitive layer (3) on the silica-base material surface of exposing to the open air at device surface to Fig. 2 by the group of molecules packing technique.Fig. 2 a be among Fig. 1 A-A to the sectional structure synoptic diagram.
Fig. 3 is the present invention obtains electroless plating initiator layer (4) by dipping process at the device upper surface a structural representation.Fig. 3 a be among Fig. 3 A-A to the sectional structure synoptic diagram.
Fig. 4 is that the present invention removes by the self-assembly thin photosensitive layer that developing process will expose, only stays the structural representation of the initiator layer of metallic surface.Fig. 4 a be among Fig. 4 A-A to the sectional structure synoptic diagram.
Fig. 5 is the present invention on the basis of modulation initiator layer pattern, carries out the synoptic diagram of the two electrodes structure processing result of the nano-scale gap that electroless plating obtained.Fig. 5 a be among Fig. 5 A-A to the sectional structure synoptic diagram.
Embodiment of the present invention are as follows:
The first step: the processing of initial two electrodes structure, obtain the gold/titanium two electrodes structure in submicron gap in conjunction with the photoetching technique of general ultraviolet light source exposure by electron beam plating, wherein substrate is a silica-base material, and as silicon-dioxide or silicon nitride, electrode is metallic substance such as gold and silver, copper etc.
Second step: the thin photosensitive layer that obtains the silica-base material surface of exposing to the open air on the surface of the two electrodes structure of above processing by the group of molecules packing technique, the material selection of its thin photosensitive layer has the photoresist material of silane functional, usually select for use ultraviosensitive glue as to (aminoethyl aminomethyl) styroyl Trimethoxy silane, and then the surface is coated with last layer electroless plating initiator layer with the method for dip-coating thereon, and its material of selecting for use is tin protochloride and Palladous chloride.The self-assembly photoactive layer that will expose by developing process is removed again, only stays the initiator layer of metal material surface.
The 3rd step: carry out electroless plating on the basis of modulation initiator layer pattern, the method for its electroless plating adopts the tested recipe and the method for common electroless copper, silver, gold, obtains the two electrodes structure devices of nano-scale gap at last.
Just can realize the present invention according to the above.
Claims (3)
1. a selective chemical plating prepares the method for nano-gap electrode, it is characterized in that the method for its preparation is mainly divided three steps:
The first step: the processing of initial two electrodes structure, promptly process the device of required two electrodes structure by general photoetching technique, wherein electrode is any metallic substance (1), substrate is silica-base material (2);
Second step: the thin photosensitive layer (3) that obtains the silica-base material surface that exposes on the surface of the two electrodes structure of above processing by the group of molecules packing technique, be coated with last layer electroless plating initiator layer (4) at the entire device upper surface by dipping process again, remove by the self-assembly photoactive layer that developing process will expose, only stay the initiator layer (4) on metallic substance (1) surface;
The 3rd step: on the basis of modulation initiator layer pattern, carry out electroless plating at original electrode surface deposition last layer metallic membrane (5), obtain the two electrodes structure devices of nano-scale gap.
2. selective chemical plating according to claim 1 prepares the method for nano-gap electrode, it is characterized in that metallic substance (1) is gold or silver or copper, and silica-base material (2) is silicon-dioxide or silicon nitride.
3. selective chemical plating according to claim 1 and 2 prepares the method for nano-gap electrode, it is characterized in that electroless plating initiator layer is a Palladous chloride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01113578 CN1128247C (en) | 2001-04-26 | 2001-04-26 | Selective chemical plating process of preparing nanometer gap electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01113578 CN1128247C (en) | 2001-04-26 | 2001-04-26 | Selective chemical plating process of preparing nanometer gap electrode |
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| Publication Number | Publication Date |
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| CN1322855A true CN1322855A (en) | 2001-11-21 |
| CN1128247C CN1128247C (en) | 2003-11-19 |
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| CN 01113578 Expired - Fee Related CN1128247C (en) | 2001-04-26 | 2001-04-26 | Selective chemical plating process of preparing nanometer gap electrode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315157C (en) * | 2004-02-17 | 2007-05-09 | 东南大学 | Preparation method of nano-gap electrode |
| CN100369206C (en) * | 2004-12-28 | 2008-02-13 | 东南大学 | External electric field induced orientation sedimentation method for preparing nano gap |
| CN100381616C (en) * | 2002-04-16 | 2008-04-16 | 摩托罗拉公司 | Selectively aligning nanometer-scale components using AC fields |
| CN100418874C (en) * | 2004-12-28 | 2008-09-17 | 东南大学 | Magnetic field induced deposition method for preparing magnetic nano-gap electrode |
| CN101225515B (en) * | 2007-10-17 | 2010-10-06 | 哈尔滨工业大学（威海） | Method for preparing gold-nano array electrode |
| CN104465327A (en) * | 2014-12-05 | 2015-03-25 | 中国科学院物理研究所 | Nanometer counter electrode and manufacturing method of nanometer counter electrode |
-
2001
- 2001-04-26 CN CN 01113578 patent/CN1128247C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100381616C (en) * | 2002-04-16 | 2008-04-16 | 摩托罗拉公司 | Selectively aligning nanometer-scale components using AC fields |
| CN1315157C (en) * | 2004-02-17 | 2007-05-09 | 东南大学 | Preparation method of nano-gap electrode |
| CN100369206C (en) * | 2004-12-28 | 2008-02-13 | 东南大学 | External electric field induced orientation sedimentation method for preparing nano gap |
| CN100418874C (en) * | 2004-12-28 | 2008-09-17 | 东南大学 | Magnetic field induced deposition method for preparing magnetic nano-gap electrode |
| CN101225515B (en) * | 2007-10-17 | 2010-10-06 | 哈尔滨工业大学（威海） | Method for preparing gold-nano array electrode |
| CN104465327A (en) * | 2014-12-05 | 2015-03-25 | 中国科学院物理研究所 | Nanometer counter electrode and manufacturing method of nanometer counter electrode |
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| Publication number | Publication date |
|---|---|
| CN1128247C (en) | 2003-11-19 |
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