CN1322527C - 一种利用螺线圈电感结构调节谐振频率的微机械开关 - Google Patents
一种利用螺线圈电感结构调节谐振频率的微机械开关 Download PDFInfo
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- CN1322527C CN1322527C CNB2004100779515A CN200410077951A CN1322527C CN 1322527 C CN1322527 C CN 1322527C CN B2004100779515 A CNB2004100779515 A CN B2004100779515A CN 200410077951 A CN200410077951 A CN 200410077951A CN 1322527 C CN1322527 C CN 1322527C
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Abstract
本发明公开了属于微型半导体电子元器件范围的一种利用螺线圈电感结构调节谐振频率的微机械开关。是在硅衬底上依次为热氧化层、下极板、覆盖下极板的氮化硅层、连接上极板和下极板的牺牲层。在上极板两端的螺线圈电感结构连接上电极和共面波导地线。在工艺流程、机械性能和传统开关基本相当或相同条件下，通过对简单的结构的调节，方便地实现对电容式微机械开关谐振频率的可控调节，大幅度地降低电容式微机械开关的谐振频率；很大程度地改善开关隔离度。保证开关的机械强度和使用寿命。
Description
技术领域
本发明属于微型半导体电子元器件范围，特别涉及一种利用螺线圈电感结构调节谐振频率的微机械开关。
背景技术
Jeremy B.Muldavin and Gabriel M.Rebeiz，在文献“IEEE Transactionson Microwave Theory and Technologies，Vol 48，No.6(2000)”的“High-Isolation CPW MEMS Shunt Switches-Part 1：Modeling，2：Design，”中指出了，电容式微机械开关的串联电感对开关的隔离度影响很大，大的串联电感可以降低谐振频率，使得开关在较低频率下就可以获得较高的隔离度。同时，文献中指出，减小开关的上电极宽度，或者是改变开关的共面波导的结构，都可以使得等效串联电感增加，从而使得开关的隔离度得到改善。但是，改变后的等效电感仍然有限，均小于100pH，因此只能一定程度上改善隔离度。
Jae Y.Park，Geun H.Kim，在文献《“ELECTROPLATED RF MEMS CAPACITIVESWITCHES”，Micro Electro Mechanical Systems，2000.MEMS 2000.TheThirteenth Annual Internat ional Conference》中比较了几种分别以不同的结构连接上电极与共面波导地线的RF MEMS电容式开关。实验结果表明，由于折叠弹簧结构的等效电感大于直梁结构和弯梁结构的等效电感，因此折叠弹簧结构开关的隔离度最优。但是，即便是折叠弹簧结构，其等效电感一般也小于200pH，对开关隔离度的改善有限。
发明内容
本发明的目的是提供一种利用螺线圈电感结构调节谐振频率的微机械开关，其特征在于：在硅衬底1上依次为热氧化层2、下极板4、覆盖下极板4的氮化硅层3、在上极板6和下极板4之间和支撑上极板6的牺牲层5。
所述上极板6两端各有一个螺线圈电感结构，并且连接上电极和共面波导地线，通过调节螺线圈的线宽、圈数和间距等参数，获得数十pH至数nH大小的电感量，很大程度的改善开关的隔离度。
本发明的有益效果是自定制地，很大程度的改善开关的隔离度。同时在工艺流程，机械性能和传统开关基本相当或相同条件下，通过对简单的结构的调节，方便地实现对电容式微机械开关谐振频率的可控调节，大幅度地降低电容式微机械开关的谐振频率；微机械开关上电极两端每边各增加了一个牺牲层材料的支撑，以保证开关的机械强度和使用寿命。
附图说明
图1为螺线圈电感结构微机械开关剖面图。
图2为螺线圈电感结构微机械开关剖面图。
具体实施方式
本发明提供一种利用螺线圈电感结构调节谐振频率的微机械开关。在图1、图2所示的螺线圈电感结构微机械开关结构示意图中，在硅衬底1上依次为热氧化层2、下极板4、覆盖下极板4的氮化硅层3、在上极板6和下极板4之间和支撑上极板6的牺牲层5。在上极板6两端各有一个螺线圈电感结构，并且连接上电极和共面波导地线，通过调节螺线圈的线宽、圈数和间距等参数，获得数十pH至数nH大小的电感量，很大程度的改善开关的隔离度。
上述微机械开关上电极厚：0.3～3.0μm；下电极厚：0.15～3.0μm；下电极间距：1～4μm。
该螺线圈电感结构调节谐振频率的微机械开关制作工艺流程如下：
1.备片、清洗，采用高阻n型或p型硅作衬底1；
2.热氧化，生成氧化层2；
3.溅射下极板金属层(金、铝、铜或铂)作为微机械开关下极板4；
4.光刻下极板金属层，形成微机械开关下极板4图形和信号传输线；
5.PECVD氮化硅层3，作为过压保护结构；
6.光刻氮化硅层3，使氮化硅层3仅覆盖下极板4部分；
7.涂高分子有机聚合物聚酰亚胺层，作为牺牲层5；
8.光刻牺牲层5，形成用来连接上极板6和下极板4的金属连接孔图形；
9.溅射上极板6金属层(金、铝或铜)作为微机械开关上极板6；
10.光刻上极板金属6，形成螺线圈电感结构以及释放牺牲层5的开孔图形；
11.合金退火(退火温度300～350℃)，使微机械开关各部分金属连接接触良好。
12.在氧气PLASMA环境中控制反应时间，使牺牲层不完全释放，形成微机械开关的悬浮结构；同时残留的牺牲层5作为上极板6金属层的支撑。
Claims (1)
1.一种利用螺线圈电感结构调节谐振频率的微机械开关，所述微机械开关的硅衬底(1)上依次为热氧化层(2)、下极板(4)、覆盖下极板(4)的氮化硅层(3)、在上极板(6)和下极板(4)之间和支撑上极板(6)的牺牲层(5)；其特征在于：所述上极板(6)两端各有一个螺线圈电感结构，并且连接上极板和共面波导地线，通过调节螺线圈的线宽、圈数和间距参数，获得数十pH至数nH大小的电感量，很大程度的改善开关的隔离度。
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| CNB2004100779515A CN1322527C (zh) | 2004-09-21 | 2004-09-21 | 一种利用螺线圈电感结构调节谐振频率的微机械开关 |
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| CN1322527C true CN1322527C (zh) | 2007-06-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2007276089A (ja) * | 2006-04-11 | 2007-10-25 | Sony Corp | 電気機械素子とその製造方法、並びに共振器とその製造方法 |
| CN101060027B (zh) * | 2007-05-15 | 2011-04-27 | 东南大学 | 抑制衬底涡流效应的微电子机械电感及其制备方法 |
| CN109559869B (zh) * | 2018-11-26 | 2020-09-15 | 清华大学 | 一种mems可调悬空螺旋电感 |
| CN112768261A (zh) * | 2020-12-30 | 2021-05-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | 射频mems开关器件及其制作方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258591A (en) * | 1991-10-18 | 1993-11-02 | Westinghouse Electric Corp. | Low inductance cantilever switch |
| US5880921A (en) * | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
| US6307452B1 (en) * | 1999-09-16 | 2001-10-23 | Motorola, Inc. | Folded spring based micro electromechanical (MEM) RF switch |
| US6373007B1 (en) * | 2000-04-19 | 2002-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Series and shunt mems RF switch |
| US6621390B2 (en) * | 2001-02-28 | 2003-09-16 | Samsung Electronics Co., Ltd. | Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch |
| US6738600B1 (en) * | 2000-08-04 | 2004-05-18 | Harris Corporation | Ceramic microelectromechanical structure |
| EP1432000A1 (en) * | 2002-12-16 | 2004-06-23 | Northrop Grumman Corporation | Millimeter wave switches |
| CN1525527A (zh) * | 2003-09-17 | 2004-09-01 | 华东师范大学 | 硅基微机械微波/射频开关芯片的制备方法 |
-
2004
- 2004-09-21 CN CNB2004100779515A patent/CN1322527C/zh not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258591A (en) * | 1991-10-18 | 1993-11-02 | Westinghouse Electric Corp. | Low inductance cantilever switch |
| US5880921A (en) * | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
| US6307452B1 (en) * | 1999-09-16 | 2001-10-23 | Motorola, Inc. | Folded spring based micro electromechanical (MEM) RF switch |
| US6373007B1 (en) * | 2000-04-19 | 2002-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Series and shunt mems RF switch |
| US6738600B1 (en) * | 2000-08-04 | 2004-05-18 | Harris Corporation | Ceramic microelectromechanical structure |
| US6621390B2 (en) * | 2001-02-28 | 2003-09-16 | Samsung Electronics Co., Ltd. | Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch |
| EP1432000A1 (en) * | 2002-12-16 | 2004-06-23 | Northrop Grumman Corporation | Millimeter wave switches |
| CN1525527A (zh) * | 2003-09-17 | 2004-09-01 | 华东师范大学 | 硅基微机械微波/射频开关芯片的制备方法 |
Non-Patent Citations (3)
| Title |
|---|
| High-Isolation CPW MEMES Shunt SwitchesPart1:Modeling Part2: Design Jeremy B. Muldavin,IEEE transaction on microwave theory and techniques,Vol.48 No.6 2000 * |
| High-Isolation CPW MEMES Shunt SwitchesPart1:Modeling Part2: Design Jeremy B. Muldavin,IEEE transaction on microwave theory and techniques,Vol.48 No.6 2000;射频微机械CPW开关的研究 张正元，温志渝，徐世六，张正番，黄尚廉，电子学报，第31卷第5期 2003 * |
| 射频微机械CPW开关的研究 张正元，温志渝，徐世六，张正番，黄尚廉，电子学报，第31卷第5期 2003 * |
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