CN1322491C - 具有反铁磁层的磁电阻传感器 - Google Patents

具有反铁磁层的磁电阻传感器 Download PDF

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Publication number
CN1322491C
CN1322491C CNB2003101197767A CN200310119776A CN1322491C CN 1322491 C CN1322491 C CN 1322491C CN B2003101197767 A CNB2003101197767 A CN B2003101197767A CN 200310119776 A CN200310119776 A CN 200310119776A CN 1322491 C CN1322491 C CN 1322491C
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CN
China
Prior art keywords
layer
biasing
spin
thickness
valve sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003101197767A
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English (en)
Chinese (zh)
Other versions
CN1506940A (zh
Inventor
哈达耶尔·辛格·吉尔
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HGST Inc
Original Assignee
Hitachi Global Storage Technologies Inc
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Filing date
Publication date
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Publication of CN1506940A publication Critical patent/CN1506940A/zh
Application granted granted Critical
Publication of CN1322491C publication Critical patent/CN1322491C/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49034—Treating to affect magnetic properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49041—Fabricating head structure or component thereof including measuring or testing with significant slider/housing shaping or treating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
    • Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
CNB2003101197767A 2002-12-06 2003-12-05 具有反铁磁层的磁电阻传感器 Expired - Fee Related CN1322491C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/313,128 2002-12-06
US10/313,128 US6958892B2 (en) 2002-12-06 2002-12-06 Magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs

Publications (2)

Publication Number Publication Date
CN1506940A CN1506940A (zh) 2004-06-23
CN1322491C true CN1322491C (zh) 2007-06-20

Family

ID=32468158

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101197767A Expired - Fee Related CN1322491C (zh) 2002-12-06 2003-12-05 具有反铁磁层的磁电阻传感器

Country Status (5)

Country Link
US (2) US6958892B2 (enExample)
JP (1) JP2004192794A (enExample)
CN (1) CN1322491C (enExample)
SG (1) SG123583A1 (enExample)
TW (1) TWI300921B (enExample)

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US6954344B2 (en) * 2003-05-16 2005-10-11 Hitachi Global Storage Technologies Netherlands B.V. Anti-parallel tab sensor fabrication using chemical-mechanical polishing process
US7230802B2 (en) * 2003-11-12 2007-06-12 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
US7280324B2 (en) * 2004-02-17 2007-10-09 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having improved antiparallel tab free layer biasing
US7180716B2 (en) * 2004-03-30 2007-02-20 Headway Technologies, Inc. Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head
US7324312B2 (en) * 2004-08-30 2008-01-29 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing exchange stabilization
US7397637B2 (en) * 2004-08-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing enhanced magnetostatic stabilization
US7450353B2 (en) * 2004-10-25 2008-11-11 The United States of America as represented by the Secretary of Commerce, The National Institute of Standards & Technology Zig-zag shape biased anisotropic magnetoresistive sensor
US20060168794A1 (en) * 2005-01-28 2006-08-03 Hitachi Global Storage Technologies Method to control mask profile for read sensor definition
US20060158790A1 (en) * 2005-01-14 2006-07-20 Hitachi Global Storage Technologies Magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability
US7342753B2 (en) * 2005-01-20 2008-03-11 Hitachi Global Storage Technologies Netherlands B.V. In-stack biasing of the free layer of a magnetoresistive read element
US7570461B2 (en) * 2005-02-28 2009-08-04 Seagate Technology Llc Magnetic sensor with in-stack biasing
US7444739B2 (en) * 2005-03-30 2008-11-04 Hitachi Global Storage Technologies Netherlands, B.V. Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process
CN100549716C (zh) * 2005-10-28 2009-10-14 中国科学院物理研究所 一种层状集成的三维磁场传感器及其制备方法和用途
US20070253120A1 (en) * 2006-04-28 2007-11-01 Kabushiki Kaisha Toshiba Magnetoresistive effect element and magnetic memory
US7768748B2 (en) * 2006-12-14 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor with overlaid combined leads and shields
WO2008090696A1 (ja) * 2007-01-22 2008-07-31 Nec Corporation 磁気抵抗素子及び磁気記憶装置
US8238062B2 (en) * 2009-06-25 2012-08-07 Seagate Technology Llc Magnetoresistive reader with demagnetization flux guide
CN102201243B (zh) * 2010-03-23 2015-04-22 新科实业有限公司 磁阻传感器、磁头、磁头折片组合及硬盘驱动器
US8553369B2 (en) * 2010-11-30 2013-10-08 Seagate Technology Llc Magnetic element with improved stability and including at least one antiferromagnetic tab
JP2013016609A (ja) * 2011-07-04 2013-01-24 Alps Electric Co Ltd 磁気検出素子及びそれを用いた磁気センサ、並びに、磁気検出素子の製造方法
US8749924B2 (en) 2011-09-13 2014-06-10 Seagate Technology Llc Tuned shunt ratio for magnetic sensors
US8675318B1 (en) 2011-11-22 2014-03-18 Western Digital (Fremont), Llc Method and system for providing a read transducer having a reduced shield-to-shield spacing
US9269382B1 (en) 2012-06-29 2016-02-23 Western Digital (Fremont), Llc Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
US8711528B1 (en) 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US8760822B1 (en) 2012-11-28 2014-06-24 Western Digital (Fremont), Llc Method and system for providing a read transducer having an extended pinned layer and soft magnetic bias structures with improved stability
US9318130B1 (en) 2013-07-02 2016-04-19 Western Digital (Fremont), Llc Method to fabricate tunneling magnetic recording heads with extended pinned layer
US9147410B2 (en) * 2013-09-16 2015-09-29 Seagate Technology Llc Reader structure with canted pinning
US9214172B2 (en) 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
US9147404B1 (en) 2015-03-31 2015-09-29 Western Digital (Fremont), Llc Method and system for providing a read transducer having a dual free layer
US9666214B1 (en) 2015-09-23 2017-05-30 Western Digital (Fremont), Llc Free layer magnetic reader that may have a reduced shield-to-shield spacing
US10783907B1 (en) * 2019-09-04 2020-09-22 Seagate Technology Llc Reader with bi-layered side shields

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6266218B1 (en) * 1999-10-28 2001-07-24 International Business Machines Corporation Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing
US6396669B1 (en) * 2000-02-08 2002-05-28 International Business Machines Corporation AP pinned PtMn spin valve read head biased for playback symmetry and magnetic stability
US6404606B1 (en) * 1999-11-05 2002-06-11 International Business Machines Corporation Seed layer structure for a platinum manganese pinning layer in a spin valve sensor
US20020131218A1 (en) * 2001-03-14 2002-09-19 Beach Robert S. Magnetic recording GMR read back sensor and method of manufacturing

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JPH04100202A (ja) * 1990-08-20 1992-04-02 Hitachi Ltd 磁気抵抗効果薄膜
US5262914A (en) * 1991-10-18 1993-11-16 International Business Machines Corporation Magnetoresistive head with enhanced exchange bias field
US7010848B2 (en) * 2002-02-15 2006-03-14 Headway Technologies, Inc. Synthetic pattern exchange configuration for side reading reduction
US7035060B2 (en) * 2002-03-06 2006-04-25 Headway Technologies, Inc. Easily manufactured exchange bias stabilization scheme
US6857180B2 (en) * 2002-03-22 2005-02-22 Headway Technologies, Inc. Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor
US6778364B2 (en) * 2002-08-28 2004-08-17 International Business Machines Corporation Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6266218B1 (en) * 1999-10-28 2001-07-24 International Business Machines Corporation Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing
US6404606B1 (en) * 1999-11-05 2002-06-11 International Business Machines Corporation Seed layer structure for a platinum manganese pinning layer in a spin valve sensor
US6396669B1 (en) * 2000-02-08 2002-05-28 International Business Machines Corporation AP pinned PtMn spin valve read head biased for playback symmetry and magnetic stability
US20020131218A1 (en) * 2001-03-14 2002-09-19 Beach Robert S. Magnetic recording GMR read back sensor and method of manufacturing

Also Published As

Publication number Publication date
US20060023375A1 (en) 2006-02-02
US6958892B2 (en) 2005-10-25
US20040109265A1 (en) 2004-06-10
SG123583A1 (en) 2006-07-26
US7313856B2 (en) 2008-01-01
TWI300921B (en) 2008-09-11
CN1506940A (zh) 2004-06-23
JP2004192794A (ja) 2004-07-08
TW200418001A (en) 2004-09-16

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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070620

Termination date: 20100105