CN1321463C - Diamond transistor and production thereof - Google Patents
Diamond transistor and production thereof Download PDFInfo
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- CN1321463C CN1321463C CNB2005101311992A CN200510131199A CN1321463C CN 1321463 C CN1321463 C CN 1321463C CN B2005101311992 A CNB2005101311992 A CN B2005101311992A CN 200510131199 A CN200510131199 A CN 200510131199A CN 1321463 C CN1321463 C CN 1321463C
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- diamond
- diamond body
- source electrode
- grid
- electrode
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Abstract
The present invention provides a diamond transistor and a manufacturing method thereof. The diamond transistor comprises a metal casing, wherein a diamond body is coated in the metal casing; a gold drain electrode S, an aluminium grid electrode G and a gold source electrode D are respectively arranged on the surface of the diamond body; a field effect layer is arranged on the surface of the diamond body. A thin film does not need coating on the diamond surface, and therefore, the present invention has the advantages of good high temperature resistance, good conductivity, large power and high frequency.
Description
Technical field
The present invention relates to transistor, is a kind of diamond transistor and preparation method thereof.
Background technology
Generally acknowledge in the world wide that at present diamond does not have conductivity, yet, because it has resistance to elevated temperatures, this area attempts it is made transistor to satisfy the demand of some industry, in recent years the diamond transistor of external report, all be to coat thin film at diamond surface, to reach the electric conductivity requirement, though this diamond transistor resistance to elevated temperatures is better, power and frequency are lower, can't satisfy the requirement of using in the requirement of special industry, particularly national defence.
Summary of the invention
The objective of the invention is, a kind of diamond transistor and preparation method thereof is provided, it need not coat film at diamond surface, makes it have resistance to elevated temperatures good the time, conducts electricity very well, power is big, frequency is high.
The present invention is in order to finish goal of the invention, following technical scheme is provided: diamond transistor comprises metal shell, cladding diamond body in the metal shell is provided with the drain electrode of gold system, aluminum grid and gold system source electrode respectively on the surface of diamond body, have the field effect layer on the surface of diamond body.Described diamond body is rectangular, and the thickness of diamond body is the 0.5-3.5 millimeter.The drain electrode of gold system, aluminum grid and gold system source electrode are set on the diamond body both side surface respectively.The lip-deep field effect layer of diamond body resistance is minimum, and electric current is big, and conductive characteristic is angled straight lines.The manufacture method of diamond transistor, its step is as follows: (1), adopt plasma apparatus under 500-1500 ℃ of high temperature, to handle diamond body, and handled 0.5-3.5 hour, make the processed surface of diamond body present the field effect layer; (2), make source electrode, drain and gate electrode figure, make positive hectograph according to electrode figure; (3), the diamond body surface clean is clean, carries out the photoetching first time, makes the diamond body surface present source electrode and drain electrode; (4), golden material is set on the diamond body, source electrode and drain electrode are drawn; (5), carry out the photoetching second time, the diamond body surface presents grid; (6), adopt thermal evaporation that aluminium is adhered to the diamond body surface, grid is drawn; (7), bonding wire, the oven dry; (8), adopt metal shell to encapsulate.The conductive characteristic of described field effect layer is angled straight lines.Electrode figure of the present invention is, grid is provided with first rectangle, first rectangle is connected with annulus, the annulus inner chamber is a source electrode, source electrode is circular, and the periphery of grid annulus is an open circular, and the corresponding position of annulus and grid first rectangle is second rectangle, first gap is set between open circular and the annulus, second gap is set between annulus and the circle.The preferred version of the inventive method is: adopt plasma apparatus to handle under 700-1100 ℃ of high temperature diamond body.Adopt plasma apparatus to handle 1-3 hour diamond body, make the processed table of diamond body and present the field effect layer.The further preferred version of the inventive method is: adopt plasma apparatus to handle under 800-1000 ℃ of high temperature diamond body.
The present invention crosses repetition test and draws good effect and be: a kind of diamond transistor with high temperature resistant, high-frequency and high-power characteristic is provided, the operating ambient temperature of product adaptation of the present invention is-50-800 ℃, operating frequency is 1G-100GHZ, drain current is the 1-30 ampere, the drain electrode dissipation power is the 1-200 watt, long service life can be applied to various industries.
Description of drawings
Accompanying drawing 1 is diamond product external form figure of the present invention.
Accompanying drawing 2 is A-A cross-sectional view in the accompanying drawing 1.
Accompanying drawing 3 is product assembling schematic diagrames of the present invention.
Accompanying drawing 4 is product conductive characteristic figure of the present invention.
In the accompanying drawing 5 electrode figure of the present invention.
Embodiment
Product of the present invention comprises metal shell 1, and cladding diamond body 2 in the metal shell 1 is provided with gold system drain electrode S, aluminum grid G and gold system source electrode D respectively on the surface of diamond body 2, have the field effect layer on the surface of diamond body 2.The diamond body 2 of product of the present invention shown in the figure is that a side is provided with gold system drain electrode S, aluminum grid G and gold system source electrode D, in order further to reduce cost, can be at diamond body 2 both sides table and on gold system drain electrode S, aluminum grid G and gold system source electrode D are set respectively.Diamond body of the present invention 2 is rectangular, the thickness of diamond body 2 is generally the 0.5-3.5 millimeter, in order to reduce cost under the prerequisite that guarantees product quality and manufacture process requirement as far as possible with the reduced thickness of diamond body 2, its thickness can be 0.5 millimeter, 3.5 millimeters, 1 millimeter, 1.2 millimeters, 1.5 millimeters, 2 millimeters, 2.5 millimeters and 3 millimeters etc., certainly the thickness of diamond body 2 can surpass more than 3.5 millimeters, but its manufacturing cost increases relatively.Diamond body 2 lip-deep field effect layer resistance of the present invention are minimum, and electric current is big, and conductive characteristic is angled straight lines, as shown in Figure 4.The manufacture method of diamond transistor of the present invention, its step is as follows: (1), adopt plasma apparatus under 500-1500 ℃ of high temperature, to handle diamond body, and handled 0.5-3.5 hour, make the processed surface of diamond body present the field effect layer; (2), make source electrode, drain and gate electrode figure, make positive hectograph according to electrode figure; (3), the diamond body surface clean is clean, carries out the photoetching first time, makes the diamond body surface present source electrode and drain electrode; (4), golden material is set on the diamond body, source electrode and drain electrode are drawn; (5), carry out the photoetching second time, the diamond body surface presents grid; (6), adopt thermal evaporation that aluminium is adhered to the diamond body surface, grid is drawn; (7), bonding wire, the oven dry; (8), adopt metal shell to encapsulate.The conductive characteristic of field effect layer of the present invention is angled straight lines.Electrode figure is, grid G is provided with first rectangle 4, first rectangle 4 is connected with annulus 3, annulus 3 inner chambers are source electrode D, and source electrode D is a circle 5, and the periphery of grid G annulus 3 is open circular 6, annulus 3 is second rectangles 7 with the corresponding position of grid first rectangle 4, first gap 8 is set between open circular 6 and the annulus 3, between the annulus 3 and circular 5 second gap 9 is set, as shown in Figure 5.The preferred scheme that the described employing plasma apparatus of the inventive method is handled is: adopt plasma apparatus to handle under 700-1100 ℃ of high temperature diamond body 2, further preferred scheme is: adopt plasma apparatus to handle under 800-1000 ℃ of high temperature diamond body 2.The temperature that adopts plasma apparatus to handle can be: all can for 500 ℃, 700 ℃, 800 ℃, 950 ℃, 1000 ℃, 1100 ℃, 1300 ℃, 1400 ℃, 1500 ℃.The time of adopting plasma apparatus to handle diamond body 2 is 0.5-3.5 hour, preferred 1-3 hour, further preferably: 1.5-2.5 hour, can be: 0.5 hour, 1 hour, 2 hours, 2.5 hours, 3 hours, 3.5 hours etc., make diamond body 2 processed surfaces present the field effect layer.The photoetching first time of the present invention and photoetching are for the second time cleaned, and can not adopt acids liquid, select acetone or KI liquid to clean better.Detailed description is all not identical with making silicon transistor method in the manufacture method of the present invention.The present invention not detailed description is known technology.
Claims (8)
1, diamond transistor, it is characterized in that: comprise metal shell (1), the interior cladding diamond body of metal shell (1) (2), gold system drain electrode (S), aluminum grid (G) and gold system source electrode (D) are set respectively on the surface of diamond body (2), have the field effect layer on the surface of diamond body (2), gold system drain electrode (S), aluminum grid (G) and gold system source electrode (D) are set on diamond body (2) both side surface respectively; The lip-deep field effect layer of diamond body (2) resistance is minimum, and electric current is big, and conductive characteristic is angled straight lines.
2, diamond transistor according to claim 1 is characterized in that: diamond body (2) is rectangular, and the thickness of diamond body (2) is the 0.5-3.5 millimeter.
3, the manufacture method of claim 1 or 2 described diamond transistors, it is characterized in that: its step is as follows: (1), adopt plasma apparatus to handle under 500-1500 ℃ of high temperature diamond body, handled 0.5-3.5 hour, and made the processed surface of diamond body present the field effect layer; (2), make source electrode, drain and gate electrode figure, make positive hectograph according to electrode figure; (3), the diamond body surface clean is clean, carries out the photoetching first time, makes the diamond body surface present source electrode and drain electrode; (4), golden material is set on the diamond body, source electrode and drain electrode are drawn; (5), carry out the photoetching second time, the diamond body surface presents grid; (6), adopt thermal evaporation that aluminium is adhered to the diamond body surface, grid is drawn; (7), bonding wire, the oven dry; (8), adopt metal shell to encapsulate.
4, the manufacture method of diamond transistor according to claim 3 is characterized in that: the conductive characteristic of field effect layer is angled straight lines.
5, according to the manufacture method of claim 3 or 4 described diamond transistors, it is characterized in that: electrode figure is, grid (G) is provided with first rectangle (4), first rectangle (4) is connected with annulus (3), annulus (3) inner chamber is source electrode (D), source electrode (D) is circular (5), the periphery of grid (G) annulus (3) is open circular (6), annulus (3) is second rectangle (7) with the corresponding position of grid first rectangle (4), between open circular (6) and the annulus (3) first gap (8) is set, between annulus (3) and circular (5) second gap (9) is set.
6, the manufacture method of diamond transistor according to claim 5 is characterized in that: adopt plasma apparatus to handle under 700-1100 ℃ of high temperature diamond body (2).
7, the manufacture method of diamond transistor according to claim 6 is characterized in that: adopt plasma apparatus to handle 1-3 hour diamond body (2), make the processed surface of diamond body (2) present the field effect layer.
8, the manufacture method of diamond transistor according to claim 7 is characterized in that: adopt plasma apparatus to handle under 800-1000 ℃ of high temperature diamond body (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101311992A CN1321463C (en) | 2005-12-30 | 2005-12-30 | Diamond transistor and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101311992A CN1321463C (en) | 2005-12-30 | 2005-12-30 | Diamond transistor and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819264A CN1819264A (en) | 2006-08-16 |
| CN1321463C true CN1321463C (en) | 2007-06-13 |
Family
ID=36919080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101311992A Expired - Fee Related CN1321463C (en) | 2005-12-30 | 2005-12-30 | Diamond transistor and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1321463C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100476023C (en) * | 2007-02-14 | 2009-04-08 | 山东泉舜科技有限公司 | Method for preparing semiconductor material on diamond surface by using arc discharge plasma chemical gas phase precipitation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1050468A (en) * | 1989-09-23 | 1991-04-03 | 山东大学 | Electrode-selecting transistor |
| US5633513A (en) * | 1992-11-24 | 1997-05-27 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor |
-
2005
- 2005-12-30 CN CNB2005101311992A patent/CN1321463C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1050468A (en) * | 1989-09-23 | 1991-04-03 | 山东大学 | Electrode-selecting transistor |
| US5633513A (en) * | 1992-11-24 | 1997-05-27 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor |
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| Publication number | Publication date |
|---|---|
| CN1819264A (en) | 2006-08-16 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070613 Termination date: 20111230 |