CN1320146C - IB-IIIA-VIA2 copper pyrite like solid solution compound - Google Patents
IB-IIIA-VIA2 copper pyrite like solid solution compound Download PDFInfo
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- CN1320146C CN1320146C CNB2005100096151A CN200510009615A CN1320146C CN 1320146 C CN1320146 C CN 1320146C CN B2005100096151 A CNB2005100096151 A CN B2005100096151A CN 200510009615 A CN200510009615 A CN 200510009615A CN 1320146 C CN1320146 C CN 1320146C
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- iiia
- compound
- chalcopyrite
- via2
- solid solution
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Abstract
The present invention discloses an IB-IIIA-VIA2 chalcopyrite sosoloid compound, relates to a crystalline material, particularly to a chalcopyrite compound. The absorption band edges of the existing chalcopyrite compounds are fixed, so the application range of the materials is limited. The IB-IIIA-VIA2 chalcopyrite sosoloid compound of the present invention is formed by that in original IB-IIIA-VIA2 chalcopyrite compounds, two elements are optionally selected from S, Se and Te to replace positions of VIA elements in the chemical formula, the structural formula of the compound is IB-IIIA-(S<1-x>Se<x>)2, IB-IIIA-(S<1-x>Te<x>)2 or IB-IIIA-(Te<1-x>Se<x>)2, wherein the value range of x is greater than 0 and less than 1, the composition and the absorption band edges of the compound can be changed by regulating X value, so the application range of the materials is added and the present invention is favorable to popularization and application.
Description
Technical field:
The present invention relates to a kind of crystalline material, particularly a kind of pyrite like solid solution compound.
Background technology:
Chalcopyrite based semiconductor crystalline material has two outstanding advantages: nonlinear optical coefficients and far infrared region transmitance are very high, utilize their nonlinear dielectric materials as optical parametric oscillation, optical parameter amplification, second harmonic, four-time harmonic etc., can in, aspect the frequency inverted of red wave band far away, especially the field that laser power is had relatively high expectations, obtain wide application prospect, as the monitoring of objectionable impurities in infrared spectra, Infrared Therapy apparatus, drug testing, infrared photoetching, the atmosphere, remote chemical sensitisation, infrared laser directional jamming, night vision equipment etc.The scientific research personnel's some IB-IIIA-VIA of U.S. Sanders company, Inrad company, naval laboratory, Stanford University nonlinear optical material center, Russian Tomsk university, light detection research institute (Institute of Optic Monitoring) has grown
2Chalcopyrite class material.But, occupying VIA element position in the above-mentioned chemical formula by wherein a kind of element of Se, Te, S in these materials of their growth, the composition of these materials, energy of absorption edge all are fixed like this, and be nonadjustable, limited the range of application of these materials.
Summary of the invention:
The object of the present invention is to provide a flavonod ore deposit class solid solution compound, form by regulating compound, thus the energy of absorption edge of regulating compound, IB-IIIA-VIA
2Pyrite like solid solution compound is at original chalcopyrite compounds IB-IIIA-VIA
2In, by (1) S and Te, or (2) Se and Te occupy the formed solid solution compound of VIA positions of elements in the above-mentioned chemical formula jointly, and the molecular formula of this compound is IB-IIIA-(S
1-xTe
x)
2Or IB-IIIA-(Te
1-xSe
x)
2, wherein the span of x is: 0＜X＜1, IB family element are Cu, the Ag element of choosing any one kind of them, IIIA family element is Al, Ga, the In element of choosing any one kind of them.The compounds of this invention can change compound and form and the compound energy of absorption edge by regulating the value of x, thereby has increased the range of application of these materials, is beneficial to and applies.
Embodiment:
Embodiment one: the IB-IIIA-VIA of present embodiment
2Pyrite like solid solution compound is, at original chalcopyrite compounds IB-IIIA-VIA
2In, by S, Se, Te optional wherein two kinds occupy the formed solid solution compound of VIA positions of elements in the above-mentioned chemical formula jointly, the molecular formula of this compound is IB-IIIA-(S
1-xSe
x)
2Or IB-IIIA-(S
1-xTe
x)
2Or IB-IIIA-(Te
1-xSe
x)
2, wherein the span of x is: 0＜X＜1.IB family element is Cu, the Ag element of choosing any one kind of them, and IIIA family element is Al, Ga, the In element of choosing any one kind of them.During chemical combination, get in the chemical combination formula each material simple substance by amount of substance in the chemical formula than mixing, vacuum is synthetic being higher than under the temperature of simple substance fusing point and melting point compound separately.
Embodiment two: the difference of present embodiment and embodiment one is that IB family element is Cu, and IIIA family element is In.
Embodiment three: the molecular formula of present embodiment compound is Cu-In-(S
0.5Se
0.5)
2, get Cu, In, S and Se by amount of substance than 0.25: 0.25: 0.25: 0.25 mixed is synthetic under 1200 ℃ the vacuum condition in temperature then.The gained compound is utilized the test of XRD-6000 type x-ray powder diffraction instrument, obtain the lattice parameter a=5.71 of this compound, c=11.31 , utilize Perkin-Elmer 9 type ultraviolets/visible/near infrared spectrometer to test this compound monocrystal body, the energy of absorption edge that obtains this compound is 0.95 μ m, the compound composition that confirms product of the present invention changes, and its energy of absorption edge is different from the energy of absorption edge of former chalcopyrite compounds.
Embodiment four: the molecular formula of present embodiment compound is Ag-Ga-(S
0.2Te
0.8)
2, get Ag, Ga, S and Te by amount of substance than (0.25: 0.25: 0.1: mixed 0.4) was synthetic under 1100 ℃ the vacuum condition in temperature then.The gained compound is utilized the test of XRD-6000 type x-ray powder diffraction instrument, obtain the lattice parameter a=6.10 of this compound, c=11.60 , utilize Perkin-Elmer 9 type ultraviolets/visible/near infrared spectrometer to test this compound monocrystal body, the energy of absorption edge that obtains this compound is 0.87 μ m, the compound composition that confirms product of the present invention changes, and its energy of absorption edge is different from the energy of absorption edge of former chalcopyrite compounds.
Embodiment five: the molecular formula of present embodiment compound is Cu-Ga-(Te
0.8Se
0.2)
2, get Cu, Ga, Te and Se by amount of substance than 0.25: 0.25: 0.4: 0.1 mixed is synthetic under 1300 ℃ the vacuum condition in temperature then.The gained compound is utilized the test of XRD-6000 type x-ray powder diffraction instrument, obtain the lattice parameter a=5.91 of this compound, c=11.75 , utilize Perkin-Elmer 9 type ultraviolets/visible/near infrared spectrometer to test this compound monocrystal body, the energy of absorption edge that obtains this compound is 0.90 μ m, the compound composition that confirms product of the present invention changes, and its energy of absorption edge is different from the energy of absorption edge of former chalcopyrite compounds.
Embodiment six: the molecular formula of present embodiment compound is Cu-Al-(S
0.3Te
0.7)
2, get Cu, Al, S and Te by amount of substance than 0.25: 0.25: 0.15: 0.35 mixed is synthetic under 1350 ℃ the vacuum condition in temperature then.The gained compound is utilized the test of XRD-6000 type x-ray powder diffraction instrument, obtain the lattice parameter a=5.70 of this compound, c=11.40 , utilize Perkin-Elmer 9 type ultraviolets/visible/near infrared spectrometer to test this compound monocrystal body, the energy of absorption edge that obtains this compound is 0.51 μ m, the compound composition that confirms product of the present invention changes, and its energy of absorption edge is different from the energy of absorption edge of former chalcopyrite compounds.
As can be seen, X-ray powder diffraction of the present invention and absorption spectrum test result obviously are different from original chalcopyrite compounds.
Claims (1)
1. IB-IIIA-VIA
2Pyrite like solid solution compound is characterized in that at original chalcopyrite compounds IB-IIIA-VIA
2In, by (1) S and Te, or (2) Se and Te occupy the formed solid solution compound of VIA positions of elements in the above-mentioned chemical formula jointly, and the molecular formula of this compound is IB-IIIA-(S
1-xTe
x)
2Or IB-IIIA-(Te
1-xSe
x)
2, wherein the span of x is: 0＜X＜1, IB family element are Cu, the Ag element of choosing any one kind of them, IIIA family element is Al, Ga, the In element of choosing any one kind of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100096151A CN1320146C (en) | 2005-01-12 | 2005-01-12 | IB-IIIA-VIA2 copper pyrite like solid solution compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100096151A CN1320146C (en) | 2005-01-12 | 2005-01-12 | IB-IIIA-VIA2 copper pyrite like solid solution compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1648272A CN1648272A (en) | 2005-08-03 |
| CN1320146C true CN1320146C (en) | 2007-06-06 |
Family
ID=34875390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100096151A Expired - Fee Related CN1320146C (en) | 2005-01-12 | 2005-01-12 | IB-IIIA-VIA2 copper pyrite like solid solution compound |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101746806B (en) * | 2008-12-10 | 2013-05-01 | 财团法人工业技术研究院 | Manufacturing method of IBIIIAVIA Group amorphous phase compound and application thereof in solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05263219A (en) * | 1991-03-27 | 1993-10-12 | Japan Energy Corp | Production of copper indium selenide thin film |
| US6566162B2 (en) * | 2001-04-27 | 2003-05-20 | National Institute Of Advanced Industrial Science And Technology | Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film |
| CN1547260A (en) * | 2003-12-17 | 2004-11-17 | 华南理工大学 | A thin-film solar cell and method for preparing same |
-
2005
- 2005-01-12 CN CNB2005100096151A patent/CN1320146C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05263219A (en) * | 1991-03-27 | 1993-10-12 | Japan Energy Corp | Production of copper indium selenide thin film |
| US6566162B2 (en) * | 2001-04-27 | 2003-05-20 | National Institute Of Advanced Industrial Science And Technology | Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film |
| CN1547260A (en) * | 2003-12-17 | 2004-11-17 | 华南理工大学 | A thin-film solar cell and method for preparing same |
Non-Patent Citations (4)
| Title |
|---|
| CIS和CIGS薄膜太阳电池的研究 孙云，太阳能学报，第22卷第2期 2001 * |
| CIS和CIGS薄膜太阳电池的研究 孙云，太阳能学报，第22卷第2期 2001;电沉积银铟硒薄膜的（光）电化学特性研究 谢少艾，电化学，第5卷第4期 1999;铜、银、金铟硒半导体薄膜光电化学振荡行为比较 徐群杰，上海电力学院学报，第13卷第4期 1997 * |
| 电沉积银铟硒薄膜的（光）电化学特性研究 谢少艾，电化学，第5卷第4期 1999 * |
| 铜、银、金铟硒半导体薄膜光电化学振荡行为比较 徐群杰，上海电力学院学报，第13卷第4期 1997 * |
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|---|---|
| CN1648272A (en) | 2005-08-03 |
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