CN1318011A - Compsite wire with noble metal cladding - Google Patents

Compsite wire with noble metal cladding Download PDF

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Publication number
CN1318011A
CN1318011A CN99810940A CN99810940A CN1318011A CN 1318011 A CN1318011 A CN 1318011A CN 99810940 A CN99810940 A CN 99810940A CN 99810940 A CN99810940 A CN 99810940A CN 1318011 A CN1318011 A CN 1318011A
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China
Prior art keywords
metal wire
core
composite
composite metal
metal
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Granted
Application number
CN99810940A
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Chinese (zh)
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CN1187189C (en
Inventor
J·M·佐伊恩蒂恩斯
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Heraeus Materials Singapore Pte Ltd
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Kulicke and Soffa Investments Inc
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Publication of CN1318011A publication Critical patent/CN1318011A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
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Abstract

Composite wires characterized by a noble metal annulus welded to a wire core comprising an electrically-conductive, non-noble metal. Methods of forming the composite wire and semiconductor packaging having at least one lead bonded to the composite wire are also disclosed.

Description

Be coated with the composite metal wire of noble metal
Technical field
The present invention relates to a kind of compound precious metal wire of conduction, wherein, the base metal core is coated by noble metal ring part branch.Concrete is to the present invention relates to a kind of composite metal wire that is formed by base metal core material and noble metal Compound Extrusion.The invention still further relates to a kind of method of making composite metal wire, the core of this composite metal wire comprises base metal, and is coated with the noble metal annular section by the Compound Extrusion of base metal core material and noble metal.
Background technology
Semiconductor packages also can not satisfy the needs that modern gold is connected the metal wire technology far away to the development of little spacing, long span and low packaging cost.Metal wire elastic modelling quantity, cost and requirement of strength are used than the common used more complicated metal line materials of 4N billon.
Following connection metal wire need satisfy the requirement of about 50 micron pitch with the metal wire of about 20 micron diameters on about 5000 microns span.Connecting the bending of metal wire and tilt can this structure of influence.One metal line should be limited in about 30 micrometer ranges with respect to the side-play amount of another metal line.Make between the adjacent wires relative deformation that produces short circuit should be, and this be a kind of strain less than 0.005%.The 4N billon has higher modulus of elasticity than fine copper, does not satisfy following this demand to enough elastic modelling quantity but the copper base connects the metal wire alloy.
Aspect elastic modelling quantity, resistivity, density and cost, copper is a kind of desirable connection metal wire.But oxidation affects and higher link cost have hindered copper to become a kind of general metal line materials that is connected.
US5097100 discloses a kind of copper metal line that is coated with noble metal.The drawing copper metal line that diameter is about the 44-56 micron is electroplate with gold, and its surface can be through cold drawn its Gold plated Layer of hardening.
But, but can not in the reasonable prices scope, electroplate Gold plated Layer equably with enough purity.The disclosed technology of US5097100 can not make gold be plated on the copper core fully.Disclosed other the metal deposition technology of this invention comprises electroless plating, vapour deposition, sputter, immersion plating etc., also has same problem.In addition, these technology all can not be coated on the copper metal line core with 4N billon connection metal wire foreskin.
US5097100 discloses copper and Jin Ke draws jointly, but does not provide the metal wire that how to make micron-scale, says nothing of and has provided a practical examples.Therefore, still need to provide a kind of compound copper metal line covered with gold leaf to satisfy the semi-conductor industry performance requirement in future with reasonable prices.
Summary of the invention
The present invention has just satisfied this demand.Composite metal wire of the present invention has the base metal core of constant diameter and applies the layer of precious metal of the uniform thickness on core securely, and this composite metal wire can be by producing comparatively economically forming layer of precious metal before the draw metal line on the base metal core.
Therefore, according to an aspect of the present invention, composite metal wire is characterised in that: the noble metal annular section is welded to and comprises on the non-noble metal metal wire core of conduction.
Copper is a kind of preferred base metal, and is best, and the metal wire core mainly is made of copper.Noble metal is preferably gold, and is best, and the purity of gold is greater than 90%.Purity is preferably greater than 99%, is more preferably greater than 99.99%.Best, gold is a kind of billon, wherein, gold is mixed, so that gold/carbon/carbon-copper composite material can be out of shape and make composite metal wire to have good switching performance when drawing preferably, for example, gold is doped with calcium less than 30ppm, less than the beryllium of 20ppm with less than other element of 50ppm.Particularly preferred billon is the 4N gold.
The invention provides a kind of method of producing composite metal wire, wherein, at first, be drawn into micron-scale then, rather than on the micron-scale metal wire, form layer of precious metal the coated noble metal of non-noble metal metal wire.Therefore, according to another aspect of the present invention, provide a kind of method of making the micron-scale composite metal wire, this composite metal wire is mainly by comprising non-noble metal conductive metal wire core and constituting attached to the noble metal annular section on the core, wherein, described method comprises:
First composite metal wire that provides diameter to be approximately 0.5-5mm, wherein, the feature of first composite metal wire is: the noble metal annular section is welded to and comprises on the non-noble metal metal wire core of conduction; And
First composite metal wire is drawn into second composite metal wire that diameter is about the 15-75 micron, and the ratio of the shared cross-sectional area of the second composite metal wire core core ratio with first composite metal wire basically is identical.
First composite metal wire is drawn by composite bar and forms, and composite bar forms by the noble metal blank Compound Extrusion with the base metal core material that welds together with the noble metal annular section.Diameter is that 20 microns composite metal wire is drawn by the composite metal wire of mm size and forms, the composite metal wire of mm size is formed by composite cylindrical body bar, composite cylindrical body bar is then formed by the composite blank extruding, change to the process that bar changes to metal wire again from blank, the complex core remains unchanged with the relative cross-sectional area of layer of precious metal.This just can directly be composite metal wire core proportion control to a degree of having never heard of so far of 20 microns with nominal diameter.Therefore, according to a further aspect of the invention, provide a kind of composite metal wire of producing by the inventive method with micron-scale diameter.
In other words, for needed core ratio, for example diameter is 20 microns a composite metal wire, can produce by the composite blank with identical core material relative scale.By producing a kind of blank, just can produce micron-scale composite metal wire with required core material ratio with the required core material ratio of composite metal wire finished product.
Composite metal wire of the present invention has the required elastic modelling quantity of semiconductor package, intensity and electric conductivity, and has price advantage.Therefore, according to another aspect of the present invention, provide a kind of semiconductor package, it has at least one lead that links to each other with the present invention's second composite metal wire.Diameter is that 25 microns composite metal wire is wedged connection not destroying under the outer successional situation of noble metal, and for fear of the oxidation of base metal core, this is necessary.
Composite metal wire of the present invention can be used for other occasion that need use tiny connection metal wire.This application includes but not limited to the metal wire or the metal cable that are used for jewelry and cathodic protection or are used for adverse circumstances.Be clear that in the description that the above-mentioned purpose, feature and advantage with other of the present invention can be in conjunction with the drawings carried out the preferred embodiment of the present invention.
The accompanying drawing summary
Fig. 1 is the cross-sectional view of the composite metal wire of the embodiment of the invention;
Fig. 2 is the side cross-sectional view of the composite blank of the embodiment of the invention, and described composite blank can form composite bar through extruding, and composite metal wire of the present invention can be drawn by above-mentioned composite bar and form;
Fig. 3 is the perspective view of the semiconductor package of the embodiment of the invention, the lead that expression is connected with composite metal wire of the present invention;
Fig. 4 is the longitudinal cross-section SEM micrograph of the composite gold wire of the coupled embodiment of the invention by wedging semiconductor package lead; And
Fig. 5 is composite gold wire and the percentage elongation of AW-14 gold thread (a kind of 4N billon) and the comparison diagram of breaking load performance of the embodiment of the invention.
DESCRIPTION OF THE PREFERRED
Fig. 1 shows the composite metal wire of the embodiment of the invention, wherein, comprises non-noble metal core 12 and links to each other with the annular section 14 of noble metal.(noble metal is defined in the air heating and not oxidized metal except that gold, also comprises platinum, palladium, silver or metalloid.) R represents the radius of the metal wire 10 that is made of core 12 and annular section 14, and r represents the radius of core 12.Core material 12 is shown " the core ratio " measured by cross-sectional area with respect to the scale of annular section 14 and metal wire 10, and it is the function of r and R ratio (r/R).
Connection forms by the heating pressurization, normally by welding.Heat that is applied and pressure are decided according to used base metal or metal alloy core material and noble metal or metal alloy annular section material, and the those of ordinary skill of field of metallurgy can be determined under situation about suitably testing at an easy rate.For example, for copper or copper alloy core and gold or billon annular section, the temperature that is adopted is approximately greater than 200 ℃, and pressure is approximately greater than 50kg/mm 2
Metal wire is drawn by the composite bar that forms by composite blank shown in Figure 2 20 extruding and forms.For example, the core metal cylinder 22 of cupric is coated in the gold that overlaps tubular or forms in the clad in intermediate layer 24.The assembly that forms is positioned in the copper extruded sleeve 26 that has end cap 28 and 30, formed blank 20 is welded, finds time and encapsulation process.Blank is preheating to about 200-700 ℃, preferably approximately 400-500 ℃, and be about 50-200kg/mm in unit are power 2, preferably be about 100-150kg/mm 2Situation under directly push and form the extruding composite cylindrical bar that diameter is suitable for the draw metal line.
Extruded bars through crop, cleaning and by common simple mould carry out drawing make diameter be about 0.5-5mm, preferably less than the composite metal wire of about 3mm.Preferably remove the extexine that forms by extruded sleeve, thereby make the composite metal wire covered with gold leaf that a winding has the copper core, by standard closing line technology it further is drawn into diameter less than 100 microns, preferably about 15-75 micron by corroding method.The core cross-sectional area does not change than original relatively composite blank, and therefore, the core ratio of metal wire product is determined by blank structure.
The diameter of blank is 25-100mm preferably, pushes just comparatively economical like this.The relative size of core, layer of precious metal and extexine and the size of blank are proportional, just, obtain to make the required core ratio of composite metal wire by selected size.Extruded sleeve accounts for the 10-20% of whole blank cross section greatly.The cylindrical core cross-sectional area ratio that is limited by base metal core and middle layer of precious metal in the cover is approximately 25-95%, preferably approximately is 50-90%.
Extruding compression ratio (the blank cross-sectional area is divided by the cross-sectional area of extruded bars) preferably is about 10-100, is more preferably to be about 15-50.The diameter that is pushed the cylindrical bar that forms by blank is approximately 2-25mm.Cylindrical bar preferably is squeezed into diameter and is about 4-20mm.Bar has identical core ratio with its extrusion billet.
Be to satisfy the modulus requirement of semi-conductor industry in the future, base metal 12 or metal wire 10 best its elastic modelling quantity of being made by the core cylinder 22 of blank 20 are greater than about 95Gpa.Suitable core material comprises metallic copper, nickel and metalloid and alloy thereof.Core material preferably has the metal or metal alloy of high conductivity and high drawing property.Therefore, core material is copper or copper alloy preferably, and they also have tangible price advantage.
The core material of wedge bond is anaerobic high purity copper (OFHC) preferably.For ball bond, the fusing point of core material preferably is no more than 5 ℃ of annular section melting point metals.For gold or billon annular section, core material preferably has the copper alloy of this fusing point.Advantageously, copper alloy is than the non-oxidizability height of fine copper.Best, the resistivity of copper core composite metal wire covered with gold leaf is approximately 1.70-2.00 μ Ohm-cm, and elastic modelling quantity is approximately 95-120Gpa, and composite denseness is approximately 9.0-15.0g/cc.Every specific character has all surpassed the 4N gold thread.
As mentioned above, the noble metal that constitutes the annular section 14 be connected in base metal core 12 preferably purity is at least 90% gold, and purity preferably is at least 99%, and more preferably at least 99.99%.Preferably a kind of doped alloys of gold is so that composite can be out of shape and make composite metal wire to have good switching performance preferably.Billon preferably is doped with calcium less than 30ppm, less than the beryllium of 20ppm with less than other element of 50ppm.Billon preferably comprises less than the calcium of 10ppm with less than the beryllium of 10ppm.Particularly preferred billon is the 4N gold, preferably nominal contain 7.5ppm beryllium, 6.5ppm calcium and less than the 4N gold of other element of 30ppm.
Composite metal wire of the present invention links to each other with the lead of semiconductor package by common technology.Fig. 3 shows semiconductor package 40, and wherein, lead 42a, 42b, 42c etc. link to each other with metal wire 10a, 10b, 10c etc. by wedging joint 44a, 44b, 44c etc.The broken section of metal wire 10b illustrates the core 12b that is surrounded by annular section 14b.
The invention provides a kind of compound metal wire that is connected that has higher elasticity modulus, higher-strength and high electrical conductivity than standard 4N billon connection metal wire.Nominally the bullion content of compound connection metal wire is the common metal line half, therefore, composite metal wire is more cheap than the 4N billon metal wire of equidimension, and composite metal wire has also kept the connection performance of standard 4N billon.
Below nonrestrictive example can show some particular aspects of the present invention.Unless otherwise indicated, all ratio and percentages all are percentage by weights, and all temperature all are Celsius temperatures.Industrial usability
The composite metal wire of being made by the inventive method can be used for semiconductor package.Example
(Willow Grove Pa.), contains less than the Ca of 10ppm and Be and less than the In of 20ppm with less than the 4N billon of the Ge of 20ppm and is cast in the mould that diameter is 28mm for American Fine Wire, Ltd. with 800gAW-14.Casting cycle is common casting in batches, and it is included in the graphite crucible melted alloy and fused mass is cast in the columnar graphite mo(u)ld.
The finished product ingot is holed, and forming internal diameter (ID) is the centre bore of 18mm, and its external diameter (OD) is worked into 25mm.Production tube is processed, and making its length is 76mm.It is that 18mm, length are the cylinder of 76mm that OFHC level copper coin cylinder is processed into external diameter.With the copper coin cylinder with in the billon pipe of packing into less than the error of 1.0mm.
The internal diameter of 0FHC copper sheathing is that 25mm, external diameter are that 28mm, length are about 85mm.The blank end cap is processed so that it can install to the end of copper sheathing.
Then, the blank end cap is carried out electron beam welding and fetch the sealing blank.With blank 450 ℃ of following preheatings 1 hour.The blank of preheating is placed in 50 tons of extruders that also are preheating to 450 ℃.Blank is expressed to the diameter of 6.4mm under 48 tons nominal operation extruding force.
With abrasive sheet extrudate is cleared up, and water washes.Cut blank end to end, and obtain sample.By common simple die drawing system the bar of gained is drawn into the 1mm diameter.The finished product metal wire is placed in 50% salpeter solution, the copper sheet that extruded sleeve produces is removed by the method for chemistry.The metal wire water that corroded washes, and then washes with alcohol.
Again with metal wire pickling about 10 seconds in chloroazotic acid (1 part of nitric acid, 3 parts of hydrochloric acid and 4 parts of water), to remove the lip-deep golden copper mixture of metal wire.The standard stamping technique that utilizes 8-12% is on the standard multi-module drawing machine and to adopt the water emulsion lubricant of oil-containing that the finished product metal wire is pulled to nominal diameter be 25 microns.The drawing property of metal wire is well, draws length and can not rupture above 5 kms.
Measure the percentage elongation and the destruction-load performance of composite metal wire.As shown in Figure 5, be higher than at percentage elongation under 2% the situation, diameter is that 24.8 microns composite metal wire is than the breaking load approximately high by 20% (in most of the cases, connecting the percentage elongation of metal wire all greater than 2%) of AW-14 billon, at percentage elongation is 4% o'clock, and its breaking load is approximately 14g.Axis copper core along metal wire is very uniform.When the metal wire final diameter was 24.8 microns, the standard deviation of the cross section of copper core only had 0.26%.
After the annealing, the elastic modelling quantity of composite metal wire is about 108Gpa, than AW-14 high approximately 26%.The resistivity of composite metal wire is 2.0 micro-ohm cm, than AW-14 about low 12%.The relation curve of the measured resistivity of composite metal wire and time and temperature show temperature be less than or equal to 200 ℃, time up to 500 hours in the resistivity increase very little.
The wedging that begins on 24.8 microns composite metal wire connects test and demonstrates higher bonding strength.Fig. 4 shows the SEM micrograph that wedging connects the semiconductor package cross section of composite metal wire.Golden skin in the wedge joint keeps continuously.
The invention provides a kind of being suitable for the high strength, the flexible compound metal wire that connect metal wire, it has one and wraps in the uniform noble metal annular section and coupled base metal core.By adopting copper or copper alloy as core material, composite metal wire just has preferred elastic modelling quantity, intensity and electric conductivity, and greatly reduces cost.
Above-mentioned example and description of preferred embodiments only are schematically, rather than restrictive, and protection scope of the present invention is defined by the claims.In not breaking away from claims of the present invention institute restricted portion, can make multiple modification and combination.Not will be understood that these modification have deviated from aim of the present invention and scope, and will be understood that they are included in claims of the present invention.

Claims (27)

1. composite metal wire is characterized in that: a noble metal annular section is welded to and comprises on the non-noble metal metal wire core of conduction.
2. composite metal wire according to claim 1 is characterized in that: described core metal is a copper.
3. composite metal wire according to claim 1 is characterized in that: it is by drawing and form described noble metal being welded on the Compound Extrusion section bar that constitutes on the described core metal.
4. composite metal wire according to claim 1 is characterized in that: the ratio that core accounts for the entire cross section area approximately is 25-95%.
5. composite metal wire according to claim 1 is characterized in that: its diameter is approximately the 15-75 micron.
6. composite metal wire according to claim 1 is characterized in that: described noble metal annular section comprises gold.
7. composite metal wire according to claim 6 is characterized in that: described noble metal is the billon that contains gold at least 99%.
8. composite metal wire according to claim 7 is characterized in that: described billon comprises the calcium that is doped with less than 30ppm, less than the beryllium of 20ppm with less than the gold of other element of 50ppm.
9. composite metal wire according to claim 8 is characterized in that: described billon comprises less than the beryllium of 10ppm with less than the calcium of 10ppm.
10. composite metal wire according to claim 7 is characterized in that: the melt temperature of described core metal and described billon is in 5 ℃.
11. composite metal wire according to claim 1 is characterized in that: the elastic modelling quantity of described metal wire is approximately greater than 95Gpa.
12. a method of making the micron-scale composite metal wire, this composite metal wire mainly by comprising non-noble metal conductive metal wire core and constituting attached to the noble metal annular section on the core, is characterized in that, said method comprising the steps of:
(A) first composite metal wire that provides diameter to be approximately 0.5-5mm, wherein, first composite metal wire mainly constitutes by being welded to the noble metal annular section that comprises on the non-noble metal metal wire core; And
(B) first composite metal wire is drawn into second composite metal wire that diameter is about the 15-75 micron, wherein, the ratio of the shared cross-sectional area of the second composite metal wire core core ratio with first composite metal wire basically is identical.
13. method according to claim 12 is characterized in that: described core metal is a copper.
14. method according to claim 13 is characterized in that: described noble metal comprises gold.
15. method according to claim 14 is characterized in that: described noble metal is the billon that contains gold at least 99%.
16. method according to claim 15 is characterized in that: described billon comprises the calcium that is doped with less than 30ppm, less than the beryllium of 20ppm with less than the gold of other element of 50ppm.
17. method according to claim 16 is characterized in that: described billon comprises and being doped with less than the beryllium of 10ppm with less than the gold of the calcium of 10ppm.
18. method according to claim 14 is characterized in that: the melt temperature of described core metal and described billon is in 5 ℃.
19. method according to claim 12 is characterized in that: the ratio that the core of described first composite metal wire accounts for the entire cross section area is about 25-95%.
20. method according to claim 12, it is characterized in that: first composite metal wire is drawn by composite bar and forms, wherein composite bar mainly constitutes by comprising described non-noble metal core, described noble metal intermediate layer and outer metal layer, remove then and remove described outer metal layer, wherein, the core ratio with described first and second composite metal wires is identical basically for the cylinder core ratio that is limited by the core of described bar and intermediate layer.
21. method according to claim 20, it is characterized in that: described bar forms by firmly pushing composite blank, wherein, described composite blank mainly constitutes by described base metal core, described noble metal intermediate layer with the corresponding outer metal layer of described bar outside metal level, and the cylinder core ratio that is limited by the core and the intermediate layer of the described blank core ratio with the core ratio of described bar and described first, second composite metal wire basically is identical.
22. method according to claim 21 is characterized in that: before extruding, described blank is preheating to about 200-700 ℃.
23. method according to claim 21 is characterized in that: described blank is with about 50-200kg/mm 2Power push.
24. the composite metal wire with micron-scale diameter is characterized in that: it is made by the described method of claim 12.
25. a semiconductor package is characterized in that: at least one lead links to each other with the described composite metal wire of claim 1.
26. semiconductor package according to claim 25 is characterized in that: described lead wedging is connected in the described composite metal wire.
27. semiconductor package according to claim 26 is characterized in that: the core of described composite metal wire mainly is made of copper.
CNB998109401A 1998-09-16 1999-09-16 Compsite wire with noble metal cladding Expired - Fee Related CN1187189C (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
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CN102226991A (en) * 2011-06-12 2011-10-26 徐云管 Copper palladium alloy monocrystal bonding wire and manufacturing method thereof
CN107041160A (en) * 2015-02-26 2017-08-11 日铁住金新材料股份有限公司 Bonding wire for semiconductor device
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US10950570B2 (en) 2014-04-21 2021-03-16 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
CN107041160A (en) * 2015-02-26 2017-08-11 日铁住金新材料股份有限公司 Bonding wire for semiconductor device
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CN1187189C (en) 2005-02-02
EP1115565A1 (en) 2001-07-18
KR100706885B1 (en) 2007-04-11
WO2000015429A9 (en) 2001-07-12
US20040065468A1 (en) 2004-04-08
JP2002524887A (en) 2002-08-06
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WO2000015429A8 (en) 2000-06-08
WO2000015429A1 (en) 2000-03-23

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