CN1317813C - Magnetic isolation grid driver - Google Patents
Magnetic isolation grid driver Download PDFInfo
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- CN1317813C CN1317813C CNB031060676A CN03106067A CN1317813C CN 1317813 C CN1317813 C CN 1317813C CN B031060676 A CNB031060676 A CN B031060676A CN 03106067 A CN03106067 A CN 03106067A CN 1317813 C CN1317813 C CN 1317813C
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Abstract
The present invention relates to a magnetic isolation grid driver which comprises a pulse width modulation driver, a pulse isolation transformer, an input end capacitor, an output end capacitor, an output end diode and a metal oxide semiconductor field effect transistor with small power on an output end, wherein the pulse width modulation driver can generate a pulse width modulation signal; the input end capacitor is connected with the input end of the transformer in series; the output end capacitor is connected with the output end of the transformer in series; the output end diode is connected with the output end of the magnetic isolation grid driver in parallel; the metal oxide semiconductor field effect transistor is connected with the output end capacitor in series; a source electrode is connected with a terminal of the output end of the transformer; a grid is connected with the other terminal of the output end of the transformer; the output end of the transformer, the output end capacitor, the output end diode and the metal oxide semiconductor field effect transistor with small power from a series circuit. When a power supply is switched on and switched off, the magnetic isolation grid driver can not make a switch tube switched on by mistake by the circuit. Consequently, the failure of the whole power supply can be effectively prevented.
Description
(1) technical field
The present invention relates to a kind of magnetic driver for isolating, thereby relate in particular to a kind of magnetic isolated gate driver that power metal oxide semiconductor field-effect transistor has preferable transient response that is provided with.
(2) background technology
The magnetic driver for isolating can be used for the driving of high-end power metal oxide semiconductor field-effect transistor.Known a kind of drive circuit commonly used as shown in Figure 1.Wherein capacitor C 1 is an input DC-isolation electric capacity, the reference direction of capacitance voltage as shown in Figure 1, T1 is an isolating transformer, QM is driven mos field effect transistor, C3 is the equivalent input capacitance of QM.S1 is the signal output waveform of pulse width modulation driver (PWM Driver), and S2 is the waveform of transformer input, and S3 is the output waveform of this magnetic driver for isolating.Circuit working waveform shown in Figure 1 sees also shown in Figure 2, the cycle of this driver output signal S1 is T when supposing stable state, and duty ratio is D, and amplitude is V1, the input and output turn ratio of supposing transformer T1 simultaneously is 1, and then the voltage on the input DC-isolation capacitor C 1 is DV1 during stable state.When S1 was high level, S3 also was a high level, and its amplitude is (V1-VC1), i.e. (1-D) V1.And when S1 was low level, S3 was a negative level, and its amplitude is (VC1), i.e. DV1.This shows that the circuit of this driver for isolating is simple, and be driven mos field effect transistor reverse driving voltage is arranged that antijamming capability is strong.Part is but it haves much room for improvement, and when duty ratio D was big, high level amplitude (1-D) V1 of S3 was just less, may cause the deficiency of QM driving voltage.Like this, this drive circuit is not suitable for being applied in the bigger occasion of change in duty cycle.
See also Fig. 3 again, Fig. 3 is the magnetic driver for isolating of another known techniques, the polarity of this transformer as shown in Figure 3, wherein capacitor C 1 is an input DC-isolation electric capacity, capacitor C 2 is an output DC-isolation electric capacity, and C3 is driven the mos field effect transistor input capacitance for equivalence.Circuit working waveform shown in Figure 3 sees also shown in Figure 4, and wherein S1 is the signal output waveform of pulse width modulation driver, and S2 is the waveform of transformer input, and S3 is the output waveform of this magnetic driver for isolating.The cycle of driver output signal S1 is T when supposing stable state, duty ratio is D, amplitude is V1, the input and output turn ratio of supposing transformer T1 simultaneously is 1, then the voltage on the input DC-isolation capacitor C 1 is VC1=DV1 during stable state, and the voltage on the output DC-isolation C2 is VC2=DV1, and the reference direction of these two capacitance voltages as shown in Figure 3.When S1 was high level, S2 and S3 also were high level.S2 high level amplitude V2 is (V1-VC1), and promptly (1-D) V1 is with S3 high level amplitude V3=V2+VC2, is V1, and as seen this amplitude and duty ratio D are irrelevant, does not also promptly change with the variation of PWM duty ratio.In the moment of S1 vanishing, the transformer input and output voltage becomes-DV1, is with diode DR conducting, S3 short circuit, the vanishing immediately of the last voltage of C3.
Because the DC-isolation of capacitor C 1 and C2, transformer T1 can realize that when big PWM duty ratio magnetic resets.Like this, this circuit characteristic has: output voltage amplitude still can remain unchanged when change in duty cycle; Duty ratio can greater than 0.5 and drive loss little.
This magnetic driver for isolating major defect is that for some reason, in the output signal disappearance of pulse width modulation driver, promptly drive signal S1 will remain zero, and will be same as above, S3 this moment vanishing immediately.But subsequently transformer T1 input (DV1) will progress under the voltage effect saturated.When transformer T1 is saturated gradually, the amplitude of transformer T1 input and output voltage diminishes gradually from DV1, and, like this, put on the increase of just will starting from scratch of voltage on the C3 that is driven mos field effect transistor because the voltage VC2 on the C2 still is DV1.Up to when transformer T1 is saturated, transformer T1 input and output voltage becomes 0, and the electric charge on the capacitor C 1 just is discharged into zero rapidly.Like this, the voltage that is added on the C3 this moment is exactly the voltage DV1 of C2.As seen, when drive signal disappeared, this drive circuit may cause misleading of long period of being driven mos field effect transistor.Under this state, the S3 of actual measurement as shown in Figure 5.Therefore, this kind drive circuit does not have preferable transient response, when power supply in starting and can cause misleading of switching tube when closing, thereby can cause the inefficacy of whole power supply.
(3) summary of the invention
The object of the present invention is to provide a kind of magnetic isolated gate driver that is provided with power metal oxide semiconductor field-effect transistor, this magnetic isolated gate driver has preferable transient response, when power supply in starting and close Shi Buhui and cause misleading of switching tube, thereby can effectively prevent the inefficacy of whole power supply.
Magnetic isolated gate driver of the present invention includes: pulse width modulation driver (PWM Driver), and it can produce the pulse width modulation signal; Pulse isolation transformer is to be connected with described pulse width modulation driver; Input end capacitor is to connect with described transformer input; Output capacitor is to connect with described transformer output; The output diode is in parallel with magnetic isolated gate output end of driver; Output low power metal oxide semiconductor field effect transistor, it is to connect with described output capacitor, its source electrode is connected to a terminal of transformer output and grid is connected to another terminal of transformer output; Described transformer output, output capacitor, output diode and low power metal oxide semiconductor field effect transistor constitute a series loop.
The present invention can also provide a kind of transformer isolation drive circuit, be to be connected to the pulse width modulation driver and to be driven on the mos field effect transistor, in order to realize that to being driven mos field effect transistor the pulse width modulation of isolating drives, and includes: pulse isolation transformer; Input end capacitor is to connect with described transformer input; Output capacitor is to connect with described transformer output; The output diode is in parallel with the output of described transformer isolation drive circuit; Output low power metal oxide semiconductor field effect transistor, it is to connect with described output capacitor, its source electrode is connected to a terminal of transformer output and grid is connected to another terminal of transformer output; And described transformer output, output capacitor, output diode and low power metal oxide semiconductor field effect transistor constitute a series loop.
According to the foregoing invention feature, magnetic isolated gate driver of the present invention constitutes a series loop by transformer output, output capacitor, output diode and low power metal oxide semiconductor field effect transistor, thereby make magnetic isolated gate driver after drive signal disappears, the drive signal that is driven on the mos field effect transistor also disappears simultaneously.Like this, at states such as error protection, shutdown, in the pulse width modulation blackout moment, the drive signal that is driven on the mos field effect transistor disappears thereupon, thereby has eliminated the problem that misleads.
(4) description of drawings
Fig. 1 is the circuit diagram of known magnetic driver for isolating.
Fig. 2 is the groundwork oscillogram of magnetic driver for isolating shown in Figure 1.
Fig. 3 is the circuit diagram of another known magnetic driver for isolating.
Fig. 4 is the groundwork oscillogram of magnetic driver for isolating shown in Figure 3.
Fig. 5 is the running oscillogram of circuit shown in Figure 3 output drive signal when the pulse width modulation blackout.
Fig. 6 is the first embodiment circuit diagram of magnetic isolated gate driver of the present invention.
Fig. 7 is the running oscillogram of circuit shown in Figure 6 output drive signal when the pulse width modulation blackout.
Fig. 8 is the second embodiment circuit diagram of magnetic isolated gate driver of the present invention.
Fig. 9 is the 3rd an embodiment circuit diagram of magnetic isolated gate driver of the present invention.
(5) embodiment
See also shown in Figure 6ly, there is shown first embodiment of magnetic isolated gate driver of the present invention.This magnetic isolated gate driver is to comprise: one has pulse isolation transformer T1, the capacitance C1, the C2 that connect with the transformer input/output terminal respectively and an output low power metal oxide semiconductor field effect transistor Q1 of polarity as shown in the figure in order to the pulse width modulation driver (PWM Driver) that produces the pulse width modulation signal, one.Wherein said low power metal oxide semiconductor field effect transistor Q1 connects with output capacitor C2, its source electrode is connected with a terminal of output, and grid is connected with another terminal of output, and this output capacitor C2, diode D1 and low power metal oxide semiconductor field effect transistor Q1 constitute a series loop, the grid that is driven mos field effect transistor is connected in the negative electrode of output diode D1, and source electrode is connected in the anode of diode D1.
During this drive circuit steady operation, its waveform is identical with Fig. 2.The amplitude of the drive signal S1 that sends when the pulse width modulation driver is V1, and when its duty ratio was D, the last voltage VC1 of C1 was DV1.The input/output terminal turn ratio of supposing T1 is 1, and the last voltage VC2 of C2 also is DV1 so.When S1 was high level, the transformer output end voltage was (1-D) V1, and under this voltage effect, Q1 is conducting always, and the voltage that puts on the signal S3 that is driven on the mos field effect transistor so is (VC2+ (1-D) V1), is V1.In case the S1 level becomes 0, VC1 promptly oppositely puts on the transformer input, makes S2 voltage for (DV1), the lock source voltage of Q1 is that (DV1), Q1 just ends like this.But simultaneously, its parasitic body diode forward conduction, also conducting of diode D1 can discharge the electric charge on the driving element by short circuit rapidly, makes the S3 level become 0 immediately.
For some reason, shut down because of fault such as power supply, S1 just begins to remain zero.In the moment of shutdown, the input terminal voltage of transformer T1 becomes-VC1, and Q1 ends, and VC2 still is DV1 this moment.So, the voltage of transformer output and capacitor C 2 and with regard to vanishing, the electric charge on the C3 is by C2, the body diode short circuit of transformer output and Q1, its voltage is vanishing rapidly just.Subsequently, as the principle of Fig. 3 circuit, because the voltage on the capacitor C 1 is applied to the transformer input continuously, transformer will progressively enter saturated, and its input and output voltage amplitude will reduce to zero gradually.And in this stage, the lock source electrode of Q1 bears negative voltage, so Q1 maintains off state, its body diode also turn-offs because bearing reverse voltage simultaneously, and C2 voltage can not put on output.This shows that after drive signal disappeared, VC2 can not add on the C3, S3 just can not be subjected to the influence of C2 voltage, thereby can not cause the false triggering problem that occurs in the circuit as shown in Figure 3.
Therefore, the operating characteristic the when adding of Q1 not only can not influence the driver stable state, and when big space rate changes, be driven mos field effect transistor and still have good drive waveforms.And after the pulse width modulation input signal disappeared for some reason, the drive signal that is driven on the mos field effect transistor also disappeared thereupon, thereby had avoided the phenomenon that misleads for a long time in the known techniques.Please shown in Figure 7 in conjunction with consulting, the figure shows the running oscillogram of magnetic isolated gate driver of the present invention output drive signal when the pulse width modulation blackout.
Should understand, though more than disclosed one embodiment of the present of invention, and the present invention can also adopt other execution modes.As also being designed to as Fig. 8 or magnetic isolated gate driver shown in Figure 9.See also shown in Figure 8, it is with the first embodiment difference shown in Figure 6: the polarity of transformer of this magnetic isolated gate driver is opposite with polarity of transformer shown in Figure 6, so the signal inversion of output drive signal that it produced and magnetic isolated gate driver.See also shown in Figure 9 again, it has disclosed another kind of performance again, polarity of transformer can adopt as Fig. 6 and arbitrary mode shown in Figure 8 among the figure, and difference exists: its output capacitor C2 is series between the drain electrode of the anode of diode D1 and low power metal oxide semiconductor field effect transistor Q1.In above Fig. 8 and the described embodiment of Fig. 9, the transformer output of described magnetic isolated gate driver, output capacitor, diode and low power metal oxide semiconductor field effect transistor all constitute a series loop.In addition, input end capacitor C1 and output capacitor C2 and output all can other resistance in parallel further.In above Fig. 6, Fig. 8 and the described embodiment of Fig. 9, in order to suppress to appear at the oscillating voltage on the transformer T1 winding, thereby avoid the false triggering of Q1, diode can be on capacitor C 1 in parallel, the anode of this diode is the contact end that is connected to capacitor C 1 and transformer T1, and its negative electrode then is connected to the other end of capacitor C 1.
The above only is preferred embodiment of the present invention, and all equivalences that every personage's spirit according to the present invention of haveing the knack of the technology of the present invention has been done change or equivalence is replaced, and all should be encompassed in the claim institute restricted portion.
Claims (14)
1. a magnetic isolated gate driver is to be connected to be driven mos field effect transistor in order to it is realized isolating the pulse width modulation driving, it is characterized in that, includes:
The pulse width modulation driver is in order to produce the pulse width modulation signal;
Pulse isolation transformer is to be connected with described pulse width modulation driver;
Input end capacitor is to connect with described transformer input;
Output capacitor is to connect with described transformer output;
The output diode is in parallel with described magnetic isolated gate output end of driver;
Output low power metal oxide semiconductor field effect transistor, it is to connect with described output capacitor, its source electrode is connected to a terminal of transformer output and grid is connected to another terminal of transformer output; And
Described transformer output, output capacitor, output diode and low power metal oxide semiconductor field effect transistor constitute a series loop, when the pulse width modulation blackout, by described transformer output, output capacitor, discharge the electric charge that is driven on the mos field effect transistor input capacitance with the body diode of low power metal oxide semiconductor field effect transistor, the drive signal that is driven on the mos field effect transistor disappears thereupon.
2. magnetic isolated gate driver as claimed in claim 1 is characterized in that the polarity of pulse isolation transformer is identical.
3. magnetic isolated gate driver as claimed in claim 1 is characterized in that the polarity of pulse isolation transformer is opposite.
4. as each described magnetic isolated gate driver of claim 1 to 3, it is characterized in that described output capacitor is to be series between the grid of the negative electrode of diode and low power metal oxide semiconductor field effect transistor.
5. as each described magnetic isolated gate driver of claim 1 to 3, it is characterized in that described output capacitor is to be series between the drain electrode of the anode of diode and low power metal oxide semiconductor field effect transistor.
6. as each described magnetic isolated gate driver of claim 1 to 3, it is characterized in that all optionally further parallel resistance of described input end capacitor, output capacitor and output thereof.
7. as each described magnetic isolated gate driver of claim 1 to 3, it is characterized in that, a further diode in parallel on the described input end capacitor, the anode of this diode is the contact end that is connected to input end capacitor and transformer, its negative electrode then is connected to the other end of input end capacitor.
8. transformer isolation drive circuit, be to be connected to the pulse width modulation driver and to be driven on the mos field effect transistor, in order to realize that to being driven mos field effect transistor the pulse width modulation of isolating drives, it is characterized in that, include:
Pulse isolation transformer;
Input end capacitor is to connect with described transformer input;
Output capacitor is to connect with described transformer output;
The output diode is in parallel with the output of described transformer isolation drive circuit;
Output low power metal oxide semiconductor field effect transistor, it is to connect with described output capacitor, its source electrode is connected to a terminal of transformer output and grid is connected to another terminal of transformer output; And
Described transformer output, output capacitor, output diode and low power metal oxide semiconductor field effect transistor constitute a series loop.
9. transformer isolation drive circuit as claimed in claim 8 is characterized in that the polarity of pulse isolation transformer is identical.
10. transformer isolation drive circuit as claimed in claim 8 is characterized in that the polarity of pulse isolation transformer is opposite.
11. each the described transformer isolation drive circuit as claim 8 to 10 is characterized in that, described output capacitor is to be series between the grid of the negative electrode of diode and low power metal oxide semiconductor field effect transistor.
12. each the described transformer isolation drive circuit as claim 8 to 10 is characterized in that, described output capacitor is to be series between the drain electrode of the anode of diode and low power metal oxide semiconductor field effect transistor.
13. each the described transformer isolation drive circuit as claim 8 to 10 is characterized in that, all optionally further parallel resistance of described input end capacitor, output capacitor and output thereof.
14. each described transformer isolation drive circuit as claim 8 to 10, it is characterized in that, a further diode in parallel on the described input end capacitor, the anode of this diode is the contact end that is connected to input end capacitor and transformer, its negative electrode then is connected to the other end of input end capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031060676A CN1317813C (en) | 2003-02-20 | 2003-02-20 | Magnetic isolation grid driver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031060676A CN1317813C (en) | 2003-02-20 | 2003-02-20 | Magnetic isolation grid driver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1523741A CN1523741A (en) | 2004-08-25 |
| CN1317813C true CN1317813C (en) | 2007-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031060676A Expired - Lifetime CN1317813C (en) | 2003-02-20 | 2003-02-20 | Magnetic isolation grid driver |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7236041B2 (en) * | 2005-08-01 | 2007-06-26 | Monolithic Power Systems, Inc. | Isolated gate driver circuit for power switching devices |
| CN102315759B (en) * | 2010-07-05 | 2015-08-12 | 通用电气公司 | There is raster data model controller circuitry and the power-up circuit thereof of anti saturation circuit |
| CN102606393B (en) * | 2011-01-25 | 2014-02-26 | 陈建华 | System power setting strengthening device |
| CN102307003A (en) * | 2011-09-14 | 2012-01-04 | 深圳航天科技创新研究院 | Insulation driving circuit of power switching tube |
| WO2021146909A1 (en) * | 2020-01-21 | 2021-07-29 | 深圳市大疆创新科技有限公司 | Demodulation circuit for isolation drive circuit, pulse generation circuit, and isolation drive circuit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763962A (en) * | 1995-09-22 | 1998-06-09 | Ecg Co., Ltd. | Semiconductor switch driving circuit |
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2003
- 2003-02-20 CN CNB031060676A patent/CN1317813C/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763962A (en) * | 1995-09-22 | 1998-06-09 | Ecg Co., Ltd. | Semiconductor switch driving circuit |
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| CN1523741A (en) | 2004-08-25 |
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