CN1317735C - Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer - Google Patents
Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer Download PDFInfo
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- CN1317735C CN1317735C CNB031033369A CN03103336A CN1317735C CN 1317735 C CN1317735 C CN 1317735C CN B031033369 A CNB031033369 A CN B031033369A CN 03103336 A CN03103336 A CN 03103336A CN 1317735 C CN1317735 C CN 1317735C
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- resilient coating
- layer
- amorphous silicon
- electron mobility
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Abstract
The present invention discloses a film transistor which is provided with a buffer layer and can promote the electron mobility and enhance the buffer layer. The buffer layer of the present invention comprises an amorphous silicon layer (a-Si) which is arranged on the surface of a substrate, and an oxidizing layer which is arranged on the surface of the amorphous silicon layer (a-Si). Because amorphous silicon has high density, the amorphous silicon can be used for blocking impurities in the glass substrate to diffuse into an action layer of a component in subsequent technology, for example, a semiconductor is provided with an active layer. In addition, the amorphous silicon has the characteristic of high thermal conductivity, when the laser annealing crystallization technology is carried out subsequently to change the amorphous silicon to polysilicon, the radiating state is changed, and the uniformity of crystallization is enhanced. Thus, the electron mobility can be enhanced.
Description
Technical field
The present invention relates to a kind of thin-film transistor (thin film transistor; TFT) resilient coating, and be particularly related to a kind of electron mobility resilient coating that improves and thin-film transistor of promoting with this resilient coating.
Background technology
In the method for existing driving liquid crystal indicator, be mainly used to be the mode of thin-film transistor, and present common thin-film transistor mainly contains two kinds of amorphous silicon film transistor (a-Si:H TFT) and polycrystalline SiTFTs (poly-Si TFT) as what image showed.Polysilicon can be divided into high temperature polysilicon (hightemperature poly silicon again; HTPS) with low temperature polycrystalline silicon (low temperature poly silicon; LTPS) two kinds.
Existing low-temperature polysilicon film transistor utilizes excimer laser as thermal source, laser is through behind the projection system, the equally distributed laser beam of meeting produce power, be projeced on the glass substrate of amorphous silicon structures, absorb the energy of excimer laser when the amorphous silicon structures glass substrate after, can be transformed into polysilicon structure.The structure of low-temperature polysilicon film transistor can be provided with a resilient coating (buffer) usually between amorphous silicon active layer and glass substrate; the major function of resilient coating not only is to increase the tack between each active layer on glass substrate and its surface, also can provide the impurity that stops glass substrate inside to diffuse into the function of each active layer in technology.Traditional resilient coating is about the silica (SiO of 3000 usually with thickness
x) constitute, but because so thick silicon oxide layer is made and must be expended the considerable time, can cause the increase of element cost, therefore, a kind of have a SiO
x/ SiN
xThe resilient coating of double layer material is suggested, and this double layer material resilient coating is with SiN
xReplace part Si O
x, the thickness of minimizing resilient coating to reduce manufacturing time, reduces cost, wherein SiO
xThickness be about 1500 , and SiN
xThickness be about 500 .
Yet people such as Naoya delivered " Crystal Growth Mechanism of Polystricalline Siby ExcimerLaser Annealing Considering hydrogen Molecule and Thermal Conductance " in periodical (Active-Matrix Liquid-CrystalDisplays-TFT) and pointed out carrying out laser annealing crystallization (excimer laserannealing at the amorphous silicon layer that is formed at buffer-layer surface 2002 Christian eras; ELA) during technology, SiN
xThe hydrogen that resilient coating inside is contained can pass SiO
xResilient coating enters in the amorphous silicon semiconductor layer that is arranged at the resilient coating top, produces a stress (stress) and obstruction grain growth (grain growth), makes crystallite dimension dwindle, and then reduces the electron mobility of element.
Summary of the invention
Therefore, in order to address the above problem, main purpose of the present invention is to provide a kind of resilient coating that promotes that electron mobility improves, applicable to thin-film transistor (TFT).
One of purpose of the present invention is to provide a kind of electron mobility resilient coating that improves and thin-film transistor with this resilient coating of promoting, enters each active layer with the diffusion of impurities in the glass substrate of block film transistor (TFT).
Two of purpose of the present invention is to provide a kind of electron mobility resilient coating that improves and thin-film transistor with this resilient coating of promoting, this resilient coating has high thermal conductivity coefficient (thermal conductivitycoefficient), uniform crystal particles in the time of can impelling amorphous silicon semiconductor layer to be transformed into silicon metal is grown up, and then improves the electron mobility of element.
For achieving the above object, the present invention proposes a kind of resilient coating that promotes that electron mobility improves, and is applicable to the substrate surface of a thin-film transistor, and above-mentioned resilient coating comprises: one is arranged at the amorphous silicon layer (a-Si) of above-mentioned substrate surface; An and oxide layer resilient coating that is arranged at above-mentioned amorphous silicon layer (a-Si) surface.
According to the present invention, the material of above-mentioned oxide layer can comprise: silica (SiO
x), its thickness is roughly 1000～2000 , and its density is roughly 2.0～2.2g/cm
3, thermal conductivity coefficient (Thermal Conductivity) is roughly 1.2～1.4Wm
-1K
-1, and can utilize plasma enhanced chemical vapor deposition method (plasma enhanced chemical vapor deposition; PECVD) form.
The invention is characterized in above-mentioned amorphous silicon layer (a-Si), because amorphous silicon not only has quite high density, can (for example: semiconductor active layer) in subsequent technique, diffuse into the active layer of element in order to stop the impurity in the above-mentioned glass substrate, and amorphous silicon still has the characteristics of high thermal conductivity coefficient, can make follow-up laser annealing crystallization (ELA) technology of carrying out when making amorphous silicon change polysilicon into, change the state of heat radiation, make the uniformity of crystallization be improved, thus, just can improve electron mobility.According to the present invention, the thickness of above-mentioned amorphous silicon layer (a-Si) is roughly 250～1000 , and its density is roughly 2～2.3g/cm
3, moreover its hydrogen content is less than 10%, and above-mentioned amorphous silicon layer (a-Si) can utilize other method (plasma enhanced chemical vapordeposition such as plasma enhanced chemical vapor deposition method; PECVD) form.
As previously mentioned, resilient coating of the present invention also can comprise: one deck nitride resilient coating, for example: silicon nitride SiN
x, be arranged between above-mentioned substrate and the above-mentioned amorphous silicon layer (a-Si).
The resilient coating of electron mobility raising that promotes of the present invention is applicable to existing thin-film transistor.
The present invention proposes a kind of thin-film transistor with the resilient coating that can promote that electron mobility improves, and comprising: a substrate; One resilient coating is arranged at above-mentioned substrate surface, the oxide layer resilient coating that above-mentioned resilient coating comprises an amorphous silicon layer that is arranged at above-mentioned substrate surface and is arranged at above-mentioned amorphous silicon layer surface; One active layer is arranged at above-mentioned oxide layer buffer-layer surface; One insulating barrier, compliance are covered in the sidewall of above-mentioned active layer surface and above-mentioned amorphous silicon layer, above-mentioned oxide layer resilient coating and above-mentioned active layer; One conductive layer is arranged at the above-mentioned surface of insulating layer of the above-mentioned active layer of part top; And a dielectric layer, comprehensive above-mentioned oxide layer resilient coating and the above-mentioned conductive layer surface of being covered in, wherein the above-mentioned active layer that is not covered by above-mentioned conductive layer is doped to a drain electrode and an one source pole respectively.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 is the section of structure that shows according to a preferred embodiment of resilient coating of the present invention;
Fig. 2 is the section of structure that shows according to another preferred embodiment of resilient coating of the present invention; And
Fig. 3 A to Fig. 3 E shows the process section of making a preferred embodiment of thin-film transistor according to resilient coating of the present invention.
Description of reference numerals in the accompanying drawing is as follows:
200,300～substrate; 202,304～amorphous silicon layer;
204,306～silica resilient coating; 206,308～amorphous silicon active layer;
206a～polysilicon active layer; 208～oxide layer;
210～grid; S～source electrode;
D～drain electrode; 212～dielectric layer;
214～conductive plunger.
Embodiment
Below please cooperate the section of structure with Fig. 2, according to a preferred embodiment of the invention with explanation with reference to figure 1.
At first, see also Fig. 1, resilient coating 202,204 of the present invention, applicable to substrate 200 surfaces of a film transistor plane indicator, usually with glass as substrate 200.Resilient coating 202,204 of the present invention can comprise: an amorphous silicon layer (a-Si) 202 and an oxide layer 204.Amorphous silicon layer (a-Si) 202 is arranged at substrate 200 surfaces, and oxide layer 204 is arranged at amorphous silicon layer (a-Si) 202 surfaces.Resilient coating of the present invention 202,204 surfaces can be provided with an amorphous silicon active layer 206.
This amorphous silicon resilient coating 202 is principal characters of the present invention, because amorphous silicon not only has quite high density, provide the impurity that stops in the glass substrate (for example: effect semiconductor active layer) in subsequent technique, to diffuse into the element active layer, moreover, and amorphous silicon has the characteristics of high thermal conductivity coefficient, can make follow-up laser annealing crystallization (ELA) technology of carrying out when making amorphous silicon change polysilicon into, change the state of heat radiation, make the uniformity of crystallization be improved, just can improve electron mobility.
Below see also Fig. 3 A to Fig. 3 E, simple declaration is adopted the manufacturing process of amorphous silicon film transistor of the present invention.At first, as shown in Figure 3A, for example form amorphous silicon resilient coating 202, silicon oxide layer 204 and amorphous silicon active layer 206 in regular turn with suitable deposition (deposition) method on substrate 200 surfaces.Wherein, amorphous silicon layer 202 can utilize plasma enhanced chemical vapor deposition method (plasmaenhanced chemical vapor deposition; PECVD) form, its predecessor comprises silane gas, for example: SiH
4, Si
2H
6, its hydrogen content is about 1～5%.Then, shown in Fig. 3 B, implement laser annealing crystallization (ELA) program, moment irradiation and heating amorphous silicon active layer 206, at this moment, amorphous silicon active layer 206 can crystallization again (recrystallize).Because amorphous silicon resilient coating 202 has the characteristics of high thermal conductivity coefficient, make that heat energy can leave fast at amorphous silicon active layer 206 when carrying out the laser annealing crystallization procedure, when just making the polysilicon 206a that amorphous silicon active layer 206 is transformed into, change the state of heat radiation, make the uniformity of crystallization be improved, thus, just can form and have the preferable polysilicon active layer 206a of uniformity, therefore, can improve electron mobility.Then, shown in Fig. 3 C, patterning amorphous silicon resilient coating 202, silicon oxide layer 204 and polysilicon active layer 206a are to form required pattern.For increasing the lining adhesiveness of follow-up each layer, amorphous silicon resilient coating 202, silicon oxide layer 204 and polysilicon active layer 206a can be patterned to stepped piling up respectively.Then, shown in Fig. 3 D, deposition one oxide layer 208 on polysilicon active layer 206a, deposition one metal level on oxide layer 208 then, and to metal layer patternization to form grid 210.Then, shown in Fig. 3 E, the part of utilizing ion injecting process not hidden by grid 214 at above-mentioned polysilicon active layer 206a earlier forms source S and drain region D respectively.At last, form a dielectric layer 212 on oxide layer 208 and grid 210 surfaces earlier, and utilize etched technology on above-mentioned source S and drain D zone, to form contact hole, insert conductive plunger (plug) 214 in contact hole, so that be connected with the circuit of other parts.
As previously mentioned, please refer to Fig. 2, the present invention also decides increase by demand and one deck nitride resilient coating 302 is set (for example: silicon nitride SiN
x) between glass substrate 300 and amorphous silicon layer (a-Si) 304, other each several part is all identical with the shown structure of Fig. 1.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit scope of the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention; can do various changes and retouching, so protection scope of the present invention should be with appended being as the criterion that claim was defined.
Claims (16)
1. resilient coating that can promote that electron mobility improves is applicable to the substrate surface of a thin-film transistor, and above-mentioned resilient coating comprises:
One amorphous silicon layer is arranged at above-mentioned substrate surface; And
One oxide layer resilient coating is arranged at above-mentioned amorphous silicon layer surface.
2. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein above-mentioned oxide layer comprises: SiO
x
3. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein above-mentioned thickness of oxide layer is 1000～2000 .
4. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein above-mentioned oxide layer utilize the plasma enhanced chemical vapor deposition method to form.
5. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein the density of above-mentioned oxide layer is 2.0～2.2g/cm
3
6. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein the thickness of above-mentioned amorphous silicon layer is 250～1000 .
7. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein the density of above-mentioned amorphous silicon layer is 2～2.3g/cm
3
8. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein the hydrogen content of above-mentioned amorphous silicon layer is less than 10%.
9. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein above-mentioned amorphous silicon layer utilize the plasma enhanced chemical vapor deposition method to form.
10. the resilient coating that promotes that electron mobility improves as claimed in claim 1, wherein above-mentioned resilient coating also comprises: the mononitride resilient coating is arranged between above-mentioned substrate and the above-mentioned amorphous silicon layer.
11. the resilient coating that promotes that electron mobility improves as claimed in claim 10, wherein above-mentioned nitride resilient coating comprises SiN
x
12. the thin-film transistor with the resilient coating that can promote that electron mobility improves comprises:
One substrate;
One resilient coating is arranged at above-mentioned substrate surface, the oxide layer resilient coating that above-mentioned resilient coating comprises an amorphous silicon layer that is arranged at above-mentioned substrate surface and is arranged at above-mentioned amorphous silicon layer surface;
One active layer is arranged at above-mentioned oxide layer buffer-layer surface;
One insulating barrier, compliance are covered in the sidewall of above-mentioned active layer surface and above-mentioned amorphous silicon layer, above-mentioned oxide layer resilient coating and above-mentioned active layer;
One conductive layer is arranged at the above-mentioned surface of insulating layer of the above-mentioned active layer of part top; And
One dielectric layer, comprehensive above-mentioned oxide layer resilient coating and the above-mentioned conductive layer surface of being covered in;
Wherein, the above-mentioned active layer that is not covered by above-mentioned conductive layer is doped to a drain electrode and an one source pole respectively.
13. the thin-film transistor with the resilient coating that can promote that electron mobility improves as claimed in claim 12, wherein above-mentioned thickness of oxide layer is 1000～2000 .
14. the thin-film transistor with the resilient coating that can promote that electron mobility improves as claimed in claim 12, wherein the thickness of above-mentioned amorphous silicon layer is 250～1000 .
15. the thin-film transistor with the resilient coating that can promote that electron mobility improves as claimed in claim 12, wherein the hydrogen content of above-mentioned amorphous silicon layer is less than 10%.
16. the thin-film transistor with the resilient coating that can promote that electron mobility improves as claimed in claim 12, wherein above-mentioned resilient coating also comprises: layer of sin
xResilient coating is arranged between above-mentioned substrate and the above-mentioned amorphous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031033369A CN1317735C (en) | 2003-01-23 | 2003-01-23 | Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031033369A CN1317735C (en) | 2003-01-23 | 2003-01-23 | Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1519888A CN1519888A (en) | 2004-08-11 |
| CN1317735C true CN1317735C (en) | 2007-05-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104045243A (en) * | 2013-03-13 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Wafers, Panels, Semiconductor Devices, And Glass Treatment Methods |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101425131B1 (en) * | 2008-01-15 | 2014-07-31 | 삼성디스플레이 주식회사 | Display substrate and display device comprising the same |
| CN103928536A (en) * | 2014-04-25 | 2014-07-16 | 中利腾晖光伏科技有限公司 | Electric potential induced attenuation prevention crystalline silicon battery and preparation method thereof |
| TWI651848B (en) | 2016-12-13 | 2019-02-21 | 友達光電股份有限公司 | Crystallization method of metal oxide semiconductor layer, semiconductor structure, active array substrate, and indium gallium zinc oxide crystal |
| CN107919270A (en) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | The manufacture method of low-temperature polysilicon film and transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283468A (en) * | 1996-04-18 | 1997-10-31 | Sony Corp | Manufacture of low-resistant conductive film |
| US6444566B1 (en) * | 2001-04-30 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Method of making borderless contact having a sion buffer layer |
| CN1388406A (en) * | 2002-06-13 | 2003-01-01 | 统宝光电股份有限公司 | Panel structure and making process of planar film transistor display |
-
2003
- 2003-01-23 CN CNB031033369A patent/CN1317735C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283468A (en) * | 1996-04-18 | 1997-10-31 | Sony Corp | Manufacture of low-resistant conductive film |
| US6444566B1 (en) * | 2001-04-30 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Method of making borderless contact having a sion buffer layer |
| CN1388406A (en) * | 2002-06-13 | 2003-01-01 | 统宝光电股份有限公司 | Panel structure and making process of planar film transistor display |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104045243A (en) * | 2013-03-13 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Wafers, Panels, Semiconductor Devices, And Glass Treatment Methods |
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|---|---|
| CN1519888A (en) | 2004-08-11 |
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