CN1317106A - Active matrix liquid crystal display and method for producing the same - Google Patents
Active matrix liquid crystal display and method for producing the same Download PDFInfo
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- CN1317106A CN1317106A CN99810547A CN99810547A CN1317106A CN 1317106 A CN1317106 A CN 1317106A CN 99810547 A CN99810547 A CN 99810547A CN 99810547 A CN99810547 A CN 99810547A CN 1317106 A CN1317106 A CN 1317106A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/202—LCD, i.e. liquid crystal displays
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
A pattern formation for partly removing a second insulating film (6) to make an opening so as to lay a scanning signal wiring (2) and a video signal wiring (5) and a pattern formation for partly removing a first insulating film (3) to make an opening so as to carry out layer conversion of the layer for the scanning signal wiring (2) and the layer for the video signal wiring (5) are simultaneously conducted. Hence the number of cycles in the photolithography processing of a TFT array process is five. The layer for the scanning signal wiring (2) and the layer for the video signal wiring (5) are electrically interconnected through the layer for a pixel electrode (7).
Description
The present invention relates to a kind of by driving active array type LCD and the manufacture method thereof that liquid crystal comes display image with on-off element.
In recent years, utilize the display device of liquid crystal display image to be used widely, because the advantage of they have thin, in light weight and low power consumption, this utilizes the feature that existing display technique did not have of CRT etc. just.Wherein, active array type LCD (below be called " AMTLCD device ") particularly, for each pixel with matrix arrangement provides the on-off element that comprises thin film transistor (TFT) (below be called " TFT "), and drive liquid crystal by on-off element and come display image.Because AMTLCD device clear display image, disturb fewly, obtain rapidly in recent years utilizing, as be used in and show in notebook personal computer and the on-vehicle navigation apparatus etc.
Below, describe existing AMTLCD device example with reference to the accompanying drawings.
Fig. 2 illustrates the part of array of the AMTLCD device of the existing TFT of having.
As shown in Figure 2, existing AMTLCD device comprises:
(a) be the glass substrate as the insulation transparent substrate of a tft array part
1；
(b) double as is arranged in the grid of the TFT on the glass substrate 1 with matrix form,
And provide the scan signal line 2 of sweep signal to this grid;
(c) cover on the scan signal line 2 first of conduct first insulation course that forms
Dielectric film, it uses the gate insulating film of doing the TFT gate insulator 3;
(d) on TFT first dielectric film (being gate insulating film) 3, form, be used for
Form the amorphous silicon film 4 of the channel region of TFT;
(e) source electrode that is connected with the amorphous silicon film 4 of TFT of double as and be used to provide figure
The video signal cable 5 of image signal;
(f) second dielectric film 6 of formation second insulation course, it is the guarantor as TFT
The passivation dielectric film of cuticula;
(g) a plurality of pixel electrodes 7 of arranging with matrix form;
What (h) form after perforate is second dielectric film 6 except that the depassivation dielectric film connects
Touch sectional hole patterns 8;
(i) perforate remove first dielectric film 3 the layer after contact hole pattern 10;
And
(j) drain electrode 11.
In said structure:
(a) a plurality of pixel electrodes 7 are arranged with matrix form;
(b) a plurality of TFT also arrange with matrix form accordingly with pixel electrode 7;
(c) video signal cable 5 is gone back the source electrode that double as is connected with the amorphous silicon film 4 of TFT,
11 provide picture signal by draining to pixel electrode 7; And
(d) second dielectric film 6 is the passivation dielectric films as the diaphragm of TFT, and
Constitute second insulation course.
For the AMTLCD device of above-mentioned formation, below describe it and how to move.
Existing AMTLCD device is worked as follows:
(a) at first voltage is added on the scan signal line 2;
(b) in amorphous silicon film 4, form the channel of TFT by means of this voltage;
(c) when forming channel, picture signal is believed by TFT from video signal cable 5
The road passes to drain electrode 11;
(d) picture signal further is transferred to pixel electrode 7;
(e) pass through at pixel electrode 7 with on the color filter (not shown)
Produce between the opposite electrode (not shown) that mode is formed with parallel surface
, freely change the liquid that between pixel electrode 7 and opposite electrode, injects and keep
Brilliant orientation; Thereby
(f) can adjust transmittance by freely changing liquid crystal aligning.
Produce needed image by above-mentioned action, be presented on the AMTLCD device screen.
In aforementioned AMTLCD device, the processing technology that forms the array of TFT on glass substrate 1 is the technology of the tediously long complexity of repetition following steps:
(a) form film, subsequently
(b) form resin pattern by photoetching process,
(c) unwanted film portion is removed in etching, subsequently
(d) remove resin pattern.
By reducing the periodicity of photoetching process, shorten the lead time of whole manufacturing process, can reduce cost of products and ratio of defects.
In above-mentioned AMTLCD device manufacturing process, photoetching process repeats six times altogether, and they are:
(a) pattern that is used for forming scan signal line 2 forms;
(b) pattern that is used for forming video signal cable 5 and drain electrode 11 forms;
(c) pattern that is used for forming amorphous silicon film 4 forms;
(d) pattern that is used for forming pixel electrode 7 forms;
(e) in order to realize writing the installation wiring of scan signal line 2 and video signal cable 5
And the pattern that removes depassivation dielectric film 6 forms;
(f) in order to carry out layer between 5 layers of 2 layers of scan signal lines and the video signal cables
Conversion and the pattern of removing first dielectric film (gate insulating film) forms.
Yet in the method for the AMTLCD of above-mentioned manufacturing prior art device, the periodicity that repeats photoetching process has six to be essential as mentioned above.Thereby such problem is arranged: photoetching process is the main cause that increases whole manufacturing process cost, because it makes the manufacturing cycle of whole technologies become tediously long.
The object of the invention is to solve foregoing problems of the prior art, and provide a kind of AMTLCD device and manufacture method thereof, this method can reduce the periodicity that repeats photoetching process in tft array technology, and shorten manufacturing cycle of the whole technology comprise above-mentioned technology, reduce the cost of the whole manufacturing process of tft array thus.
To achieve these goals, AMTLCD device of the present invention and manufacture method thereof are that (promptly once) finishes following steps simultaneously:
(a) open in order to implement to write the installation wiring of scan signal line and video signal cable
The pattern that second insulation course is removed in the hole forms; And
(b) in order between scan signal line layer and video signal cable layer, to carry out a layer conversion
And the pattern formation of first insulation course is removed in perforate.
Therefore, the periodicity of repetition photoetching process can reduce to five times in tft array technology.In addition, it is characterized in that using pixel electrode layer that scan signal line layer and video signal cable layer are electrically connected.
AMTLCD device of the present invention is by following manner display image on screen:
(a) holding liquid crystal between the insulation transparent substrate that faces one another; And
(b) by driving liquid with sweep signal and picture signal corresponding to display image
Crystalline substance, display image on above-mentioned screen.
In the AMTLCD device, a plurality of pixels that are used for display image comprise with the array portion that matrix form is arranged on the insulation transparent substrate:
(a) corresponding with described pixel respectively at least in some way a plurality of with rectangular
The formula pixel electrodes arranged;
(b) film crystal to arrange by the mode that corresponds respectively to described pixel electrode
A plurality of on-off elements that pipe constitutes;
(c) be used for each grid to described a plurality of on-off elements sweep signal is provided
A plurality of scan signal lines;
(d) a plurality of video signal cables are used for each source through described a plurality of on-off elements
The utmost point and drain electrode provide picture signal to pixel electrode;
(e) cover on described a plurality of scan signal line, as described a plurality of switch unit
First insulation course of the dielectric film of the grid of part; And
(f) cover on described a plurality of video signal cable, as a plurality of on-off elements
Second insulation course of diaphragm.
According to above-mentioned formation, active array type LCD of the present invention is:
(a) contact hole of the part of pixel electrode by in second insulation course, forming
Pattern and video signal cable conduct,
(b) and also by the contact hole pattern that in first and second insulation courses, forms with
Scan signal line conducts; And
(c) it comes display image by driving liquid crystal with sweep signal and picture signal,
Described signal comes the on-off switch element by pixel electrode.
Therefore, the present invention can reduce the periodicity of photoetching process in the repetition tft array technology, and shortens the manufacturing cycle of the whole technology that comprises above-mentioned technology, thereby reduces the cost of the whole manufacturing process of tft array.
Fig. 1 illustrates the AMTLCD device and the manufacture method thereof of exemplary embodiments of the present invention;
Fig. 2 illustrates existing AMTLCD device and manufacture method thereof.
Below, the AMTLCD device and the manufacture method thereof of exemplary embodiments of the present invention are described particularly with reference to accompanying drawing.
Fig. 1 illustrates the part of the AMTLCD device of present embodiment, adopts identical label with Fig. 2 components identical of expression prior-art devices.
As shown in Figure 1, the AMTLCD device of present embodiment comprises:
(a) as the glass substrate 1 of insulation transparent substrate;
(b) double as is arranged in the grid of the TFT on the glass substrate 1 with matrix form
The utmost point also provides the scan signal line 2 of sweep signal to the grid of this TFT;
(c) cover first insulation that forms first insulation course on the scan signal line 2
Film is as the gate insulating film 3 relative with the TFT grid;
(d) on TFT first dielectric film (being gate insulating film) 3, form, use
Amorphous silicon film 4 in the channel region that forms TFT;
(e) be used to provide the video signal cable 5 of picture signal, it is also double as simultaneously
The source electrode that is connected with the amorphous silicon film 4 of TFT;
(f) second dielectric film 6 of formation second insulation course, it is to protect as TFT
The passivation dielectric film of cuticula;
(g) a plurality of pixel electrodes 7 of arranging with matrix form;
(h) after opening, remove as shape after the passivation dielectric film of second dielectric film 6
The contact hole pattern 8 that becomes;
(i) contact hole pattern 9 between pixel electrode 7 and the scan signal line 2;
And
(j) drain electrode 11 that is connected with the amorphous silicon film 4 of TFT.
In said structure:
(a) a plurality of pixel electrodes 7 are arranged with matrix form;
(b) corresponding to pixel electrode 7, a plurality of TFT also arrange with matrix form;
(c) video signal cable 5 is gone back the source that double as is connected with TFT amorphous silicon film 4
The utmost point 11 provides picture signal to pixel electrode 7 by draining;
(d) second dielectric film 6 is for comprising for example SiN
x, SiO
2, acryl resin,
The film of polyimide, polyamide or polycarbonate or their stack membrane;
(e) pixel electrode 7 and drain electrode 11 are electrically connected by contact hole pattern 8.
Fig. 1 that present embodiment is shown is different with Fig. 2 that the prior art example is shown in the following areas.
The difference be scan signal line 2 the layer and video signal cable 5 the layer between electrical connection.As shown in Figure 2, in the past, be after 3 layers of first dielectric films are removed, to form contact hole pattern 10.Between scan signal line 2 and video signal cable 5, directly be electrically connected then.
And, shown in the wiring conversion fraction of Fig. 1,, form the perforate on scan signal line 2 upper surfaces by after deposit second dielectric film 6, removing first dielectric film 3 and second dielectric film 6 simultaneously at present embodiment.Contact hole pattern 9 forms between pixel electrode 7 and scan signal line 2, and generation type is conductings for a part and the scan signal line 2 at this surface perforate part pixel electrode 7.By such formation, scan signal line 2 and video signal cable 5 form electrical connection indirectly by pixel electrode 7.
(once) finishes following steps simultaneously in the present embodiment:
(a) perforate is removed in order to assemble scan signal line 2 and video signal cable 5
As the passivation dielectric film of second dielectric film 6, form pattern; And
(b) in order to carry out between 5 layers of 2 layers of scan signal lines and the video signal cables
Layer conversion, and the gate insulating film as first dielectric film 3 is removed in perforate, forms figure
Case.
Therefore, the periodicity of above-mentioned photoetching process can reduce to five times.This can shorten the manufacturing cycle of whole manufacturing process, reduces the cost of whole technology thus.
The manufacture method of the array substrate of AMTLCD device may further comprise the steps as constituted above:
(a) at first, by spatter film forming method deposition film, shape on glass substrate 1
Become scan signal line 2; And
(b) by photoetching process and etch process to scan signal line 2 compositions.
By repeating deposition film and usefulness photoetching process and etch process to its composition, these technologies of the present invention are finished:
(a) form amorphous silicon film 4;
(b) form video signal cable 5;
(c) form drain electrode 11; And
(d) form pixel electrode 7.
As mentioned above, by removing first dielectric film 3 and second dielectric film 6 behind deposit second dielectric film 6 simultaneously, in the wiring conversion fraction, form scan signal line 2 lip-deep perforates.Scan signal line 2 and video signal cable 5 become, and make them pass through pixel electrode 7 and form electrical connection indirectly.In order to implement the wiring between scan signal line 2 and the video signal cable 5 in the AMTLCD of above-mentioned formation device, (once) finishes following steps simultaneously:
(a) form pattern in order to remove the depassivation dielectric film; And
(b) in order to carry out layer between 5 layers of 2 layers of scan signal lines and the video signal cables
Conversion and gate insulating film is removed in perforate forms pattern.
Therefore, the periodicity of photoetching process can reduce to five times.
As a result, can in array processes, reduce in a large number in other local many technologies that need such as thin-film deposition, photoetching process, etch process, cleaning procedure etc.And the manufacturing cycle of array processes can shorten widely, realizes the reduction of technology cost thus.
According to above-mentioned the present invention, (once) finishes following step simultaneously: the pattern of removing second insulation course in order to implement distribution between scan signal line and video signal cable forms, and the pattern formation of removing first insulation course in order to carry out layer conversion between scan signal line layer and video signal cable layer.Can reduce to the periodicity of photoetching process in the tft array technology five times thus, can utilize pixel electrode layer between scan signal line layer and video signal cable layer, to form electrical connection simultaneously.
Can realize the minimizing of the periodicity of photoetching process in the tft array technology thus, and shorten the manufacturing cycle of the whole technology that comprises above-mentioned technology, thereby reduce the cost of the whole manufacturing process of tft array.
Claims (5)
1. active array type LCD, comprising:
(a) be used for providing a plurality of scan signal lines of sweep signal to each grid of a plurality of on-off elements;
(b) be used for providing a plurality of video signal cables of picture signal to pixel electrode with draining by each source electrode of described a plurality of on-off elements;
(c) cover on described a plurality of scan signal line, be used for first insulation course the gate insulator of described a plurality of on-off elements; And
(d) cover on described a plurality of video signal cable, be used for second insulation course described a plurality of on-off elements insulation;
And this liquid crystal indicator constitutes as follows:
(e) part of described pixel electrode, conduct by contact hole pattern and the formation of described video signal cable that on described second insulation course, forms, and another part conducts by another contact hole pattern and the formation of described scan signal line that forms on described first and second insulation courses.
2. active array type LCD as claimed in claim 1, wherein said first insulation course is the sandwich construction that comprises semiconductor layer.
3. as claim 1 and 2 described active array type LCDs, wherein said second insulation course is the transparent resin of acryl resin, polyimide, polyamide or polycarbonate, or comprises the sandwich construction of these resins.
4. method of making active array type LCD, wherein said method comprises the technology that forms element, this element is included in a plurality of on-off elements in the array portion, this array portion has a plurality of image display of arranging with matrix form on the insulation transparent substrate, described technology comprises:
(a) first step:, form at least that a plurality of each grid that is used for to described a plurality of on-off elements provide sweep signal and as the scan signal line of the anti-true line of grid of described each grid by etching selectively;
(b) second step: each channel strip that forms described a plurality of on-off elements;
(c) third step: by etching selectively, form a plurality of be used for through each source electrodes of described a plurality of on-off elements and drain electrode to described pixel electrode described picture signal is provided, and as a plurality of video signal cables of the anti-true line in source of described a plurality of source electrodes;
(d) the 4th step, each insulation course by etching selectively comprises the dielectric film of the grid that covers the described a plurality of on-off elements that are used on described a plurality of scan signal line to insulate and covers the diaphragm that is used to protect described a plurality of on-off elements on described a plurality of video signal cable forms perforate simultaneously on the surface of described a plurality of scan signal lines and described a plurality of video signal cables;
(e) the 5th step: form described a plurality of pixel electrode by etching selectively; And
(f) the 6th step: in described scan signal line layer and described video signal cable layer, form the assembling terminal on arbitrary layer, cover described pixel electrode layer at an upper portion thereof, and install with the anisotropic conductive film compacting at an upper portion thereof.
5. the method for manufacturing active array type LCD as claimed in claim 4, wherein said first step to described the 6th step is implemented with described order.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25019898A JP2000081638A (en) | 1998-09-04 | 1998-09-04 | Liquid crystal display device and its manufacture |
| JP250198/1998 | 1998-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1317106A true CN1317106A (en) | 2001-10-10 |
Family
ID=17204290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99810547A Pending CN1317106A (en) | 1998-09-04 | 1999-08-26 | Active matrix liquid crystal display and method for producing the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2000081638A (en) |
| KR (1) | KR20010079729A (en) |
| CN (1) | CN1317106A (en) |
| TW (1) | TW536647B (en) |
| WO (1) | WO2000014600A1 (en) |
Cited By (8)
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| CN100359398C (en) * | 2003-09-19 | 2008-01-02 | 夏普株式会社 | Active base plate, display device and manufacturing method of display device |
| CN100361015C (en) * | 2001-11-07 | 2008-01-09 | 皇家飞利浦电子股份有限公司 | Active matrix pixel device |
| CN100394289C (en) * | 2004-01-29 | 2008-06-11 | 友达光电股份有限公司 | Liquid crystal display device and a manufacturing method of the same |
| CN100403359C (en) * | 2003-07-10 | 2008-07-16 | 友达光电股份有限公司 | Film electric crystal array having spare signal line |
| CN100465718C (en) * | 2002-12-06 | 2009-03-04 | 三星电子株式会社 | Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same |
| US7659541B2 (en) | 2002-12-06 | 2010-02-09 | Samsung Electronics Co., Ltd. | Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same |
| CN101359669B (en) * | 2007-07-31 | 2010-06-16 | 北京京东方光电科技有限公司 | TFT LCD array substrate construction and manufacturing method thereof |
| CN101436600B (en) * | 2005-01-21 | 2011-11-09 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same, and electric device |
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|---|---|---|---|---|
| KR100796749B1 (en) | 2001-05-16 | 2008-01-22 | 삼성전자주식회사 | A thin film transistor array substrate for a liquid crystal display |
| KR100525437B1 (en) * | 2002-04-19 | 2005-11-02 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device and method for fabricating the same |
| JP6335652B2 (en) | 2014-05-27 | 2018-05-30 | 三菱電機株式会社 | Display device and thin film transistor manufacturing method |
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| JPH04333828A (en) * | 1991-05-09 | 1992-11-20 | Sony Corp | Liquid crystal display device |
| JPH05243333A (en) * | 1992-02-26 | 1993-09-21 | Nec Corp | Thin film field-effect transistor substrate |
| JP3239504B2 (en) * | 1993-01-13 | 2001-12-17 | 富士通株式会社 | Method of manufacturing thin film transistor matrix |
| JP2755376B2 (en) * | 1994-06-03 | 1998-05-20 | 株式会社フロンテック | Manufacturing method of electro-optical element |
| JPH09113932A (en) * | 1995-10-19 | 1997-05-02 | Fujitsu Ltd | Wiring board and its production |
| KR100190041B1 (en) * | 1995-12-28 | 1999-06-01 | 윤종용 | Method of fabricating liquid crystal display device |
| JP3152193B2 (en) * | 1996-12-18 | 2001-04-03 | 日本電気株式会社 | Thin film transistor array substrate and method of manufacturing the same |
| KR100552286B1 (en) * | 1998-05-29 | 2006-05-11 | 삼성전자주식회사 | Thin film transistor liquid crystal display device and manufacturing method thereof |
-
1998
- 1998-09-04 JP JP25019898A patent/JP2000081638A/en active Pending
-
1999
- 1999-08-26 WO PCT/JP1999/004606 patent/WO2000014600A1/en not_active Application Discontinuation
- 1999-08-26 KR KR1020017002769A patent/KR20010079729A/en not_active Application Discontinuation
- 1999-08-26 CN CN99810547A patent/CN1317106A/en active Pending
- 1999-09-07 TW TW088115207A patent/TW536647B/en active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100361015C (en) * | 2001-11-07 | 2008-01-09 | 皇家飞利浦电子股份有限公司 | Active matrix pixel device |
| CN100465718C (en) * | 2002-12-06 | 2009-03-04 | 三星电子株式会社 | Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same |
| US7659541B2 (en) | 2002-12-06 | 2010-02-09 | Samsung Electronics Co., Ltd. | Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same |
| CN100403359C (en) * | 2003-07-10 | 2008-07-16 | 友达光电股份有限公司 | Film electric crystal array having spare signal line |
| CN100359398C (en) * | 2003-09-19 | 2008-01-02 | 夏普株式会社 | Active base plate, display device and manufacturing method of display device |
| CN100394289C (en) * | 2004-01-29 | 2008-06-11 | 友达光电股份有限公司 | Liquid crystal display device and a manufacturing method of the same |
| CN101436600B (en) * | 2005-01-21 | 2011-11-09 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same, and electric device |
| CN101442057B (en) * | 2005-01-21 | 2012-09-05 | 株式会社半导体能源研究所 | Semiconductor device,its manufacturing method and electronic apparatus |
| CN101359669B (en) * | 2007-07-31 | 2010-06-16 | 北京京东方光电科技有限公司 | TFT LCD array substrate construction and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW536647B (en) | 2003-06-11 |
| WO2000014600A1 (en) | 2000-03-16 |
| JP2000081638A (en) | 2000-03-21 |
| KR20010079729A (en) | 2001-08-22 |
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